CN111524821A - Eutectic welding platform and eutectic welding method for microwave chip - Google Patents
Eutectic welding platform and eutectic welding method for microwave chip Download PDFInfo
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- CN111524821A CN111524821A CN202010503519.7A CN202010503519A CN111524821A CN 111524821 A CN111524821 A CN 111524821A CN 202010503519 A CN202010503519 A CN 202010503519A CN 111524821 A CN111524821 A CN 111524821A
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/77—Apparatus for connecting with strap connectors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7515—Means for applying permanent coating, e.g. in-situ coating
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/77—Apparatus for connecting with strap connectors
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- H—ELECTRICITY
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/84009—Pre-treatment of the connector and/or the bonding area
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Abstract
The invention provides a microwave chip eutectic welding platform and an eutectic welding method, belonging to the technical field of chip packaging, wherein the microwave chip eutectic welding platform comprises a shell, a heating platform and a working platform; the top end of the shell is open; the heating platform is arranged in the shell and is used for being electrically connected with an external power supply; the working platform is arranged in the shell, and the bottom surface of the working platform is attached to the top surface of the heating platform; the top surface of the working platform is provided with a plurality of working areas which are respectively used for sticking metal carriers with different sizes; wherein, be equipped with respectively in a plurality of work areas and be used for the vacuum adsorption hole with the vacuum pump pipeline intercommunication, the vacuum adsorption hole is used for adsorbing the metal carrier, and the aperture of the vacuum adsorption hole in each work area is directly proportional with the subsides face size of metal carrier. The microwave chip eutectic welding platform provided by the invention is suitable for welding operation of microwave chips of different models. The invention also provides a eutectic welding method.
Description
Technical Field
The invention belongs to the technical field of chip packaging, and particularly relates to a microwave chip eutectic welding platform and a eutectic welding method.
Background
Eutectic soldering is a common microwave chip packaging process, and eutectic alloy is formed between a chip and a metal carrier by heating and melting a solder sheet at high temperature, so that the chip and the metal carrier are connected into a whole. Common microwave chip eutectic welding has three kinds of modes, utilize the vacuum packaging stove to carry out vacuum eutectic welding promptly, utilize the chip mounter to carry out automatic friction eutectic welding, tweezers centre gripping chip carries out manual friction eutectic welding, the required equipment price of two kinds of preceding modes is expensive, and need customize frock clamp to the microwave chip of different models (size), consequently there is the problem that the commonality is poor, with high costs, the cycle length, to the production demand of many varieties, small batch, adopt manual friction eutectic welding's mode usually.
According to a traditional welding platform adopted by manual friction eutectic welding, a spring clamp is adopted to fix a metal carrier on a heating working table, a solder sheet is placed on the metal carrier, and after the solder sheet is melted, a chip is clamped by tweezers to perform friction welding. This kind of mode is because the position of the manual adjustment spring clamp baffle of needs is in order to realize the clamp of metal carrier, and it is inconvenient to operate in high temperature environment, scalds operating personnel easily, can't all guarantee stable, suitable clamping-force to the metal carrier of equidimension not in addition, and especially to the metal carrier that the size is less, the clamping stability is poor, causes the phenomenon that metal carrier rocks or collapses to fly easily in the friction welding process.
Disclosure of Invention
The invention aims to provide a microwave chip eutectic welding platform and a eutectic welding method, and aims to solve the problems that a microwave chip manual friction eutectic welding tool in the prior art is inflexible in switching of metal carriers with different sizes and poor in clamping stability of small-size metal carriers.
In order to achieve the purpose, the invention adopts the technical scheme that: the eutectic welding platform for the microwave chip comprises a shell, a heating platform and a working platform; the top end of the shell is open; the heating platform is arranged in the shell and is used for being electrically connected with an external power supply; the working platform is arranged in the shell, and the bottom surface of the working platform is attached to the top surface of the heating platform; the top surface of the working platform is provided with a plurality of working areas which are respectively used for sticking metal carriers with different sizes; wherein, be equipped with respectively in a plurality of work areas and be used for the vacuum adsorption hole with the vacuum pump pipeline intercommunication, the vacuum adsorption hole is used for adsorbing the metal carrier, and the aperture of the vacuum adsorption hole in each work area is directly proportional with the subsides face size of metal carrier.
As another embodiment of the present application, a plurality of vacuum suction holes are disposed at intervals in each working area, and when the metal carrier is attached to the working area, at least two adjacent vacuum suction holes are located below the metal carrier.
As another embodiment of this application, work platform's inside is equipped with a plurality of air vents, a plurality of air vents and a plurality of work area one-to-one, and a plurality of air vents are used for communicateing vacuum pump line respectively, and the vacuum adsorption hole is extended downwards by work platform's top surface, and communicates with corresponding air vent.
As another embodiment of the application, the vent holes extend from the side wall of the working platform along the radial direction of the working platform, the vent holes are communicated with each other, one of the vent holes is used for connecting a vacuum pump pipeline, and the openings of the rest vent holes are respectively provided with a plug.
As another embodiment of this application, the lateral wall of casing is worn to be equipped with a plurality of nitrogen gas pipes, and the end of giving vent to anger of a plurality of nitrogen gas pipes penetrates the inside oblique below extension of casing respectively, and aims at each work area respectively, and a plurality of nitrogen gas pipes are used for connecting the nitrogen gas source respectively.
As another embodiment of the application, the top inner wall of the shell is provided with a nitrogen baffle ring.
As another embodiment of this application, work platform's top surface lid is equipped with the shrouding, and when metal carrier pasted and put in rather than the corresponding work area of size and carry out the operation, the shrouding is used for the vacuum adsorption hole of the remaining work area of shutoff.
As another embodiment of the application, the top surface of the working platform is provided with a fixed shaft which extends vertically upwards, a plurality of working areas are distributed at intervals along the circumferential direction of the fixed shaft, the sealing plate is in a semicircular shape or a fan shape with a central angle larger than 180 degrees, and the sealing plate is rotatably connected with the fixed shaft.
As another embodiment of the application, the extension end of the fixed shaft is in threaded connection with a nut, the fixed shaft is sleeved with a spring, one end of the spring is abutted against the top surface of the sealing plate, and the other end of the spring is abutted against the bottom surface of the nut.
The microwave chip eutectic welding platform provided by the invention has the beneficial effects that: compared with the prior art, the microwave chip eutectic welding platform has the advantages that the working platform is provided with a plurality of working areas, the plurality of working areas are respectively provided with the vacuum adsorption holes suitable for adsorbing metal carriers with different sizes, an operator can select the corresponding working areas according to the sizes of the metal carriers to enable the vacuum adsorption holes in the working areas to adsorb and fix the metal carriers, the metal carriers are simple to fix, convenient to operate and stable and reliable in adsorption, the metal carriers with different sizes can select different working areas to adsorb and fix, the fixing positions can be flexibly switched, the stable adsorption and fixation can be ensured particularly for the metal carriers with small sizes, the microwave chip eutectic welding platform is suitable for manual friction eutectic welding processes of microwave chips with different models, the universality is high, the microwave chip eutectic welding platform is suitable for eutectic welding operation of various microwave chips in small batches, particularly for MEMS (Micro-Electro-Mechanical systems, micro electro mechanical system) circulator has important significance in the popularization and application of the 5G communication field.
The invention also provides a microwave chip eutectic welding method, which comprises the following steps:
electrifying the microwave chip eutectic welding platform to heat the working platform at 183-380 ℃, and starting a vacuum pump;
the tin-plated plate is absorbed in a working area of a working platform matched with the size of the tin-plated plate in vacuum, solder is placed on the tin-plated plate for heating and melting, and the back of the microwave chip is attached to the melted solder for friction tin-plating;
taking down the microwave chip after tin coating for natural air cooling, and taking down the tin coating plate;
the metal carrier to be welded is attached to the working platform, and vacuum adsorption is carried out on the metal carrier through a vacuum adsorption hole of a working area corresponding to the size of the metal carrier;
placing solder on the top surface of the metal carrier for tin coating, and taking down the metal carrier for natural air cooling after tin coating is finished;
the microwave chip after tin-coating and air-cooling is pasted on the corresponding position on the metal carrier after tin-coating and air-cooling;
the metal carrier with the microwave chip is attached to a corresponding working area on the working platform, and vacuum adsorption is carried out through the vacuum adsorption hole;
after tin-coating layer solders on the top surface of the metal carrier and the bottom surface of the microwave chip are heated and melted, clamping the microwave chip to perform annular friction on the metal carrier for 3-5 weeks or cross-shaped reciprocating friction for 3-5 times;
and taking down the metal carrier and the microwave chip after the tin-coating solder is melted from the microwave chip eutectic welding platform, naturally cooling and completing welding.
The eutectic welding method for the microwave chip provided by the invention has the beneficial effects that: compared with the prior art, the microwave chip eutectic welding method has the beneficial effects of the microwave chip eutectic welding platform, and can also form a good solder layer after tin coating on the bottom surface of the microwave chip and the surface of the metal carrier by respectively carrying out tin coating treatment on the bottom surface of the microwave chip and the surface of the metal carrier on the microwave chip eutectic welding platform before welding, only the solders of the tin coating layers on the bottom surface of the microwave chip and the top surface of the metal carrier are heated and melted during welding, no additional solder is needed, the conditions of poor cleanliness and coating defects of the bottom surface of the microwave chip or the surface of the metal carrier or high welding voidage caused by factors such as solder oxidation and the like can be avoided, so that the welding voidage can be reduced, and the yield of welding operation of the microwave chip can be improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic perspective view of a microwave chip eutectic bonding platform according to an embodiment of the present invention;
FIG. 2 is an enlarged view of a portion of FIG. 1 at A;
FIG. 3 is a sectional view taken along line B-B of FIG. 1;
FIG. 4 is a sectional view taken along line C-C of FIG. 1;
FIG. 5 is a schematic perspective view of a working platform according to an embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view of a work platform used in an embodiment of the present invention;
FIG. 7 is a perspective view of a closure plate in accordance with an embodiment of the present invention;
fig. 8 is a flowchart of a eutectic soldering method for a microwave chip according to an embodiment of the present invention.
In the figure: 100. a housing; 101. a nitrogen gas pipe; 102. a nitrogen baffle ring; 200. a heating platform; 201. a temperature controller; 300. a working platform; 301. a vacuum adsorption hole; 302. closing the plate; 303. a fixed shaft; 304. screwing a nut; 305. a spring; 306. a vent hole; 307. a plug; 400. a vacuum pump line; 501. a first region; 502. a second region; 503. a third region; 504. and a fourth region.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, 3 to 5, a microwave chip eutectic bonding platform according to the present invention will now be described. The microwave chip eutectic welding platform comprises a shell 100, a heating platform 200 and a working platform 300; the top end of the housing 100 is open; the heating platform 200 is disposed inside the casing 100 and electrically connected to an external power source; the working platform 300 is arranged inside the shell 100, and the bottom surface of the working platform is attached to the top surface of the heating platform 200; the top surface of the working platform 300 is provided with a plurality of working areas, and the plurality of working areas are used for respectively attaching metal carriers with different sizes; wherein, be equipped with respectively in a plurality of working areas and be used for with the vacuum suction hole 301 of vacuum pump pipeline 400 intercommunication, vacuum suction hole 301 is used for adsorbing the metal carrier, and the aperture of the vacuum suction hole 301 in each working area is directly proportional with the subsides of metal carrier and puts the face size.
The working principle of the eutectic welding platform for the microwave chip provided by the invention is as follows: before welding operation, the heating platform 200 is first heated by electricity, and as a common heating method in the prior art, a temperature controller 201 is embedded on the heating platform 200, the heating temperature of the heating platform 200 can be controlled by the temperature controller 201, the working platform 300 attached to the top surface of the heating platform 200 is heated by heat transfer, meanwhile, the vacuum pump is started to generate negative pressure at the mouth of each vacuum adsorption hole 301 connected with the vacuum pump, and the metal carrier is fixed by the adsorption force of the vacuum adsorption holes 301 when being attached to the working area and positioned above the vacuum adsorption holes 301, a solder sheet or other form of solder is then placed on the metal carrier, the metal carrier is heated by heat transfer from the work platform 300 to the metal carrier, so that the solder is melted, and then the microwave chip is clamped and placed on the metal carrier for manual friction eutectic welding.
It should be understood that the aperture of the vacuum adsorption hole 301 in each working area is proportional to the size of the surface to which the metal carrier is attached, and the larger the aperture of the vacuum adsorption hole 301 is, the larger the adsorption force is, so that the metal carrier with a large size should be attached to the working area of the vacuum adsorption hole 301 with a large aperture for adsorption and fixation, whereas the metal carrier with a small size should be attached to the working area of the vacuum adsorption hole 301 with a small aperture for adsorption and fixation.
In addition, since the vacuum suction holes 301 have airflow to pass through and have a certain heat dissipation effect on the working platform 300, heat loss is caused, and the larger the aperture is, the faster the heat dissipation is, especially for a metal carrier with a small size, if the area of the attaching surface of the metal carrier occupied by the vacuum suction holes 301 is larger and the heating effect of the metal carrier is worse, the heating temperature of the working platform 300 needs to be increased to ensure that the solder transferred to the upper side of the metal carrier is melted, which easily causes the heat damage of the microwave chip due to the overhigh temperature transferred to the microwave chip, so that the vacuum suction holes 301 with a small aperture should be selected for suction fixation under the condition that the sufficient suction force on the metal carrier can be satisfied.
Compared with the prior art, the microwave chip eutectic welding platform provided by the invention has the advantages that the working platform 300 is provided with a plurality of working areas, the plurality of working areas are respectively provided with the vacuum adsorption holes 301 suitable for adsorbing metal carriers with different sizes, an operator can select the corresponding working area according to the size of the metal carrier, so that the vacuum adsorption holes 301 in the working areas can adsorb and fix the metal carrier, the metal carrier is simple to fix, convenient to operate and stable and reliable in adsorption, the metal carriers with different sizes can select different working areas to adsorb and fix, the fixed position is flexible and convenient to switch, the stable adsorption and fixation can be ensured particularly for the metal carriers with small sizes, the microwave chip eutectic welding platform is suitable for the manual friction eutectic welding process of microwave chips with different models, the universality is high, and the microwave chip eutectic welding platform is suitable for eutectic welding operation of various microwave chips in small batches, the method has important significance for popularization and application of the MEMS circulator in the field of 5G communication.
As a specific embodiment of the microwave chip eutectic bonding platform provided by the present invention, please refer to fig. 5, a plurality of vacuum suction holes 301 are disposed at intervals in each working area, and when the metal carrier is attached to the working area, at least two adjacent vacuum suction holes 301 are located below the metal carrier.
Set up a plurality of vacuum adsorption holes 301 with every work area internal interval here, of course, interval between the adjacent vacuum adsorption hole 301 should be less than the size of metal carrier, thereby when guaranteeing that the metal carrier pastes and puts in the work area, can guarantee that at least two adjacent vacuum adsorption holes 301 are located the face below of putting of pasting of metal carrier and adsorb jointly (can select the interval of putting between the adjacent vacuum adsorption hole 301 to establish to be less than half of the size of metal carrier, thereby can guarantee that the metal carrier pastes and puts in the optional position of work area internal, can both cover two at least vacuum adsorption holes 301, thereby make things convenient for the subsides of metal carrier to put).
The metal carrier is adsorbed and fixed together through the at least two vacuum adsorption holes 301, on one hand, the metal carrier can be prevented from rotating (if only one vacuum adsorption hole 301 is adsorbed and fixed, the phenomenon is easy to happen) in the process that the microwave chip performs annular friction (generally adopting the mode of annular friction or cross friction) on the metal carrier, on the other hand, the at least two vacuum adsorption holes 301 are adopted for common adsorption, the aperture of a single vacuum adsorption hole 301 can be reduced (the common adsorption force of the at least two small-aperture vacuum adsorption holes 301 is not less than that of the single large-aperture vacuum adsorption hole 301), and the larger heat loss caused by the overlarge aperture of the vacuum adsorption hole 301 is avoided, therefore, the heating temperature of the work platform 300 needs to be increased to melt the solder, which in turn causes the microwave chip to be thermally damaged due to the excessive temperature transmitted to the microwave chip.
In the present embodiment, referring to fig. 5, the pitch of the vacuum suction holes 301 in each working area is proportional to the size of the placement surface of the metal carrier. The size of metal carrier is big, then the area of covering is big, consequently can set up to great interval to adjacent vacuum adsorption hole 301, avoid because of the serious condition of heat loss that vacuum adsorption hole 301 is close and cause, thereby avoid causing the thermal damage to the microwave chip because of the required workstation 300's of solder melting heating temperature is too high, of course, the metal carrier size is little, then the area of covering is little, consequently, the interval that needs adjacent vacuum adsorption hole 301 is less, thereby can guarantee that at least two vacuum adsorption hole 301 carry out the absorption jointly fixedly to the metal carrier.
Referring to fig. 5, the top surface of the work platform 300 may be equally divided into four work areas, the aperture and the hole pitch of the vacuum suction holes 301 of the first area 501 are both set to 0.6mm, the aperture and the hole pitch of the vacuum suction holes 301 of the second area 502 are both set to 1mm, the aperture and the hole pitch of the vacuum suction holes 301 of the third area 503 are both set to 1.5mm, the aperture and the hole pitch of the vacuum suction holes 301 of the fourth area 504 are both set to 2mm, and each area is respectively corresponding to absorb metal carriers with different sizes, for example, a metal carrier with a size of 2.8 × 1.75mm is selectively attached to the first area 501 for absorption and fixation, and a metal carrier with a size of 5 × 7mm is selectively attached to the fourth area 504 for absorption and fixation.
As a specific implementation manner of the embodiment of the present invention, referring to fig. 5 and fig. 6, a plurality of vent holes 306 are disposed inside the working platform 300, the plurality of vent holes 306 correspond to a plurality of working areas one to one, the plurality of vent holes 306 are respectively used for communicating with the vacuum pump pipeline 400, and the vacuum absorption holes 301 extend downward from the top surface of the working platform 300 and are communicated with the corresponding vent holes 306.
In the present embodiment, referring to fig. 4 and fig. 6, the vent holes 306 extend from the sidewall of the working platform 300 along the radial direction of the working platform 300, and a plurality of the vent holes 306 are communicated with each other, wherein one of the vent holes 306 is used for connecting the vacuum pump pipeline 400, and the mouths of the other vent holes 306 are respectively provided with plugs 307. The mouth of one vent 306 is connected with the vacuum pump pipeline 400, so that all vacuum adsorption holes 301 can be communicated with a vacuum pump, during machining, holes can be drilled through the side wall of the working platform 300, and after machining, the plugs 307 are installed for plugging, so that the machining is convenient, and the manufacturing cost is low.
As a specific implementation manner of the embodiment of the present invention, referring to fig. 1, fig. 3 and fig. 4, a plurality of nitrogen pipes 101 are disposed through the sidewall of the housing 100, the gas outlet ends of the plurality of nitrogen pipes 101 respectively penetrate through the interior of the housing 100 and extend obliquely downward and are respectively aligned with each working area, and the plurality of nitrogen pipes 101 are respectively used for connecting to a nitrogen gas source.
It should be noted that, the nitrogen pipeline is connected with a flow valve, and in the actual working process, the amount of nitrogen sprayed into the working area can be adjusted by adjusting the opening of the flow valve, so that a good nitrogen protection environment is formed in the welding process of the microwave chip, the oxidation speed of the solder at high temperature is reduced, the sufficient infiltration and melting of the welding surface of the microwave chip and the metal carrier are ensured, and the welding voidage is reduced.
In the present embodiment, referring to fig. 1, 3 and 4, a nitrogen baffle ring 102 is disposed on the inner wall of the top end of the housing 100. The density of nitrogen gas is less than air density, can rise slowly in the air after being heated, can block that nitrogen gas rises through nitrogen gas fender ring 102 to delay nitrogen gas diffusion velocity, form effectual nitrogen gas protective layer, ensure that the anti-oxidation of nitrogen gas protective layer is effectual among the eutectic welding process.
Referring to fig. 1, 3 and 4, as an embodiment of the present invention, a sealing plate 302 is covered on a top surface of the work platform 300, and when the metal carrier is attached to a work area corresponding to a size of the metal carrier for operation, the sealing plate 302 is used to seal off the vacuum suction holes 301 of the rest of the work area. Only the vacuum adsorption hole 301 that is used for welding operation's work area can communicate with vacuum pump pipeline 400 and carry out adsorption work, and all the other vacuum adsorption holes 301 carry out the shutoff through shrouding 302, prevent to reveal vacuum pressure from other vacuum adsorption holes 301, guarantee the adsorption strength to the metal carrier, can also reduce the power loss of vacuum pump simultaneously, reduce running cost.
In this embodiment, referring to fig. 5 and 7, a fixed shaft 303 extending vertically and upwardly is disposed on the top surface of the working platform 300, a plurality of working areas are distributed at intervals along the circumferential direction of the fixed shaft 303, the sealing plate 302 is in a shape of a semicircle or a sector with a central angle larger than 180 °, and the sealing plate 302 is rotatably connected to the fixed shaft 303. Through rotating shrouding 302, can spill the work area that needs carry out welding operation fast, and the remaining work area of shutoff, convenient operation can carry out work area's fast switch-over, is fit for the many varieties welding operation of microwave chip.
In the present embodiment, referring to fig. 1 to 4, the extension end of the fixed shaft 303 is threadedly connected with a nut 304, the fixed shaft 303 is sleeved with a spring 305, one end of the spring 305 abuts against the top surface of the sealing plate 302, and the other end abuts against the bottom surface of the nut 304. By rotating the nut 304, the elastic acting force of the spring 305 can be adjusted, and the sealing plate 302 can be tightly attached through the elastic acting force of the spring 305, so that the sealing plate 302 can be tightly sealed on the vacuum adsorption hole 301, and air leakage is avoided.
The invention also provides a eutectic welding method for the microwave chip. Referring to fig. 1 and 8, the eutectic soldering method for the microwave chip includes the following steps:
step S1, electrifying the microwave chip eutectic welding platform to heat the working platform, wherein the heating temperature is 183-380 ℃, and starting a vacuum pump;
s2, vacuum absorbing the tin-plated plate in a working area of which the size is matched with that of the tin-plated plate on a working platform, placing solder on the tin-plated plate for heating and melting, and attaching the back of the microwave chip to the melted solder for friction tin plating;
s3, taking down the microwave chip after tin coating for natural air cooling, and taking down the tin coating plate;
step S4, the metal carrier to be welded is pasted on the working platform 300, and vacuum adsorption is carried out on the metal carrier through the vacuum adsorption hole 301 of the working area corresponding to the size of the metal carrier;
s5, placing solder on the top surface of the metal carrier for tin coating, and taking down the metal carrier for natural air cooling after tin coating is finished;
step S6, pasting the microwave chip which is tin-lined and air-cooled on the corresponding position of the metal carrier which is tin-lined and air-cooled;
step S7, placing the metal carrier with the microwave chip on the corresponding working area of the working platform 300, and performing vacuum adsorption through the vacuum adsorption hole 301;
s8, after the tin-lined layer solder on the top surface of the metal carrier and the bottom surface of the microwave chip is heated and melted, clamping the microwave chip on the metal carrier to perform annular friction for 3-5 weeks or cross reciprocating friction for 3-5 times;
and step S9, taking down the metal carrier and the microwave chip after the tin-coating solder is melted from the microwave chip eutectic welding platform, naturally cooling and completing welding.
It should be understood that the steps S2 to S3 are processes for tin-coating the back surface of the microwave chip, and the steps S4 to S5 are processes for tin-coating the front surface of the metal carrier, and they are not critical, and the metal carrier may be tin-coated in advance and the microwave chip may be tin-coated.
In addition, the solder used in the process of tin coating the front surface of the metal carrier and the back surface of the microwave chip is tin solder.
The microwave chip eutectic welding method provided by the invention adopts the microwave chip eutectic welding platform, a plurality of working areas are arranged on the working platform 300, and vacuum adsorption holes 301 suitable for adsorbing metal carriers with different sizes are respectively arranged in the working areas, an operator can select the corresponding working area according to the size of the metal carrier, so that the vacuum adsorption holes 301 in the working areas can adsorb and fix the metal carrier, the metal carrier is simple to fix, convenient to operate and stable and reliable in adsorption, the metal carriers with different sizes can select different working areas to adsorb and fix, the fixed position is flexible and convenient to convert, stable adsorption and fixation can be ensured particularly for the metal carriers with small sizes, the microwave chip eutectic welding method is suitable for the manual friction eutectic welding process of microwave chips with different models, the universality is high, and the microwave chip eutectic welding method is suitable for the eutectic welding operation of various microwave chips in small batches, the MEMS circulator has important significance for popularization and application in the field of 5G communication;
in addition, before the eutectic welding of the microwave chip, the bottom surface of the microwave chip and the top surface of the metal carrier are respectively subjected to tin coating process on the eutectic welding platform of the microwave chip, so that the bottom surface of the microwave chip and the top surface of the metal carrier form a good solder layer after tin coating, tin materials of the bottom surface of the microwave chip and the top surface of the metal carrier are heated and melted during welding, additional solder is not needed, the conditions of poor cleanliness and coating defects of the bottom surface of the microwave chip or the surface of the metal carrier or high welding voidage caused by factors such as solder oxidation and the like can be avoided, the welding voidage can be reduced, and the yield of the eutectic welding operation of the microwave chip can be improved.
As a specific embodiment of the eutectic soldering method for the microwave chip provided by the present invention, the heating temperature of the working platform 300 is matched with the solder used when the tin plating treatment is performed on the bottom surface of the microwave chip and the top surface of the metal carrier. For example, tin-lead solder is adopted during tin coating treatment, the heating temperature of the working platform 300 is 183-200 ℃, and the solder can be heated and melted; adopting tin-silver solder or tin-silver-copper solder, wherein the heating temperature of the working platform 300 is 220-240 ℃, and the solder can be heated and melted; the gold-tin solder is adopted, so that the heating temperature of the working platform 300 is 280-300 ℃, and the solder can be heated and melted; the gold germanium solder is adopted, so that the heating temperature of the working platform 300 is 361-380 ℃, and the solder can be heated and melted.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. Microwave chip eutectic welded platform, its characterized in that includes:
a housing with an open top end;
the heating platform is arranged inside the shell and is used for being electrically connected with an external power supply;
the working platform is arranged in the shell, and the bottom surface of the working platform is attached to the top surface of the heating platform; the top surface of the working platform is provided with a plurality of working areas, and the plurality of working areas are used for respectively sticking metal carriers with different sizes;
the vacuum adsorption holes are used for being communicated with a vacuum pump pipeline and are used for adsorbing the metal carrier, and the aperture of each vacuum adsorption hole in each working area is in direct proportion to the size of the placement surface of the metal carrier.
2. A microwave die eutectic bonding platform according to claim 1, wherein: and a plurality of vacuum adsorption holes are arranged in each working area at intervals, and when the metal carrier is attached to the working area, at least two adjacent vacuum adsorption holes are positioned below the metal carrier.
3. A microwave die eutectic bonding platform according to claim 1, wherein: work platform's inside is equipped with a plurality of air vents, and is a plurality of the air vent is with a plurality of work area one-to-one, and is a plurality of the air vent is used for the intercommunication respectively the vacuum pump pipeline, the vacuum adsorption hole by work platform's top surface downwardly extending, and with corresponding the air vent intercommunication.
4. A microwave die eutectic bonding platform according to claim 3, wherein: the air vent is extended from the side wall of the working platform along the radial direction of the working platform, the air vents are communicated with one another, one of the air vents is used for connecting the vacuum pump pipeline, and plugs are respectively arranged at the openings of the rest air vents.
5. A microwave die eutectic bonding platform according to claim 1, wherein: the lateral wall of casing is worn to be equipped with a plurality of nitrogen gas pipes, and is a plurality of the end of giving vent to anger of nitrogen gas pipe penetrates respectively the inside oblique below of casing extends, and aims at each respectively work area, it is a plurality of the nitrogen gas pipe is used for connecting the nitrogen gas source respectively.
6. A microwave die eutectic bonding platform of claim 5, wherein: and a nitrogen baffle ring is arranged on the inner wall of the top end of the shell.
7. A microwave chip eutectic bonding platform according to any one of claims 1 to 6, wherein: the top surface of the working platform is covered with a sealing plate, and when the metal carrier is attached to the working area corresponding to the size of the metal carrier for operation, the sealing plate is used for sealing the rest of the vacuum adsorption holes of the working area.
8. A microwave die eutectic bonding platform according to claim 7, wherein: the top surface of the working platform is provided with a vertically and upwardly extending fixed shaft, a plurality of working areas are distributed at intervals along the circumferential direction of the fixed shaft, the sealing plate is in a semicircular shape or a fan shape with a central angle larger than 180 degrees, and the sealing plate is rotatably connected with the fixed shaft.
9. A microwave die eutectic bonding platform according to claim 8, wherein: the extension end threaded connection of fixed axle has revolves female, the cover is equipped with the spring on the fixed axle, the one end of spring with the top surface butt of shrouding, the other end with revolve female bottom surface butt.
10. The eutectic welding method for the microwave chip is characterized by comprising the following steps of:
electrifying the microwave chip eutectic welding platform according to any one of claims 1 to 9 to heat the working platform at 183-380 ℃, and starting a vacuum pump;
the tin-coating plate is absorbed in a working area of the working platform matched with the tin-coating plate in size in a vacuum mode, solder is placed on the tin-coating plate to be heated and melted, and the back face of the microwave chip is attached to the melted solder to be rubbed to coat tin;
taking down the microwave chip after tin coating for natural air cooling, and taking down the tin coating plate;
the metal carrier to be welded is attached to the working platform, and vacuum adsorption is carried out on the metal carrier through a vacuum adsorption hole of the working area corresponding to the size of the metal carrier;
placing solder on the top surface of the metal carrier for tin coating, and taking down the metal carrier for natural air cooling after tin coating is finished;
the microwave chip after tin coating and air cooling is attached to the corresponding position on the metal carrier after tin coating and air cooling;
the metal carrier with the microwave chip is attached to the corresponding working area on the working platform, and vacuum adsorption is carried out through the vacuum adsorption hole;
after tin-coating layer solders on the top surface of the metal carrier and the bottom surface of the microwave chip are heated and melted, clamping the microwave chip on the metal carrier to perform annular friction for 3-5 weeks or cross reciprocating friction for 3-5 times;
and taking down the metal carrier and the microwave chip after the tin-lined layer solder is melted from the microwave chip eutectic welding platform, naturally cooling and completing welding.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113369626A (en) * | 2021-06-25 | 2021-09-10 | 中国电子科技集团公司第五十四研究所 | Low-contact thermal resistance mounting method for high-power amplifier chip |
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2020
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113369626A (en) * | 2021-06-25 | 2021-09-10 | 中国电子科技集团公司第五十四研究所 | Low-contact thermal resistance mounting method for high-power amplifier chip |
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