CN111517811A - 一种陶瓷pcb基板的快速等离子烧结制备方法 - Google Patents
一种陶瓷pcb基板的快速等离子烧结制备方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 27
- 238000005245 sintering Methods 0.000 title claims abstract description 26
- 239000000919 ceramic Substances 0.000 title claims abstract description 20
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000005751 Copper oxide Substances 0.000 claims abstract description 18
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 18
- 229910052574 oxide ceramic Inorganic materials 0.000 claims abstract description 12
- 238000005516 engineering process Methods 0.000 claims abstract description 9
- 239000002131 composite material Substances 0.000 claims abstract description 8
- 239000011224 oxide ceramic Substances 0.000 claims abstract description 8
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims abstract description 5
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 claims abstract 4
- 238000000034 method Methods 0.000 claims description 10
- 229910010293 ceramic material Inorganic materials 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 230000003213 activating effect Effects 0.000 claims description 5
- 238000004321 preservation Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000011812 mixed powder Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 229910002087 alumina-stabilized zirconia Inorganic materials 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 12
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052593 corundum Inorganic materials 0.000 abstract description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 3
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 abstract description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 abstract description 2
- 239000012776 electronic material Substances 0.000 abstract description 2
- 238000000227 grinding Methods 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000007769 metal material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
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Abstract
本发明涉及一种利用等离子烧结技术(SPS)制备新型陶瓷PCB基板的快速制备方法。通过在氧化物陶瓷中如氧化铝(Al2O3)，氧化锆ZrO2‑3％Y2O3(3YSZ)材料添加氧化铜(CuO或者Cu2O)2～8wt.％，快速烧结在低温下制备Al2O3‑氧化铜,ZrO2‑3％Y2O3‑氧化铜复合材料陶瓷PCB基板。本发明成本低，制备工艺简单，周期短。本发明应用于电子材料领域和大规模集成电路领域。
Description
技术领域
一种陶瓷PCB基板的快速等离子烧结制备方法
背景技术
陶瓷PCB基板是指铜箔在高温下直接键合到陶瓷基片表面(单面或双面)上的特殊工艺板。所制成的超薄复合基板具有优良的电绝缘性能，高导热特性，优异的软钎焊性和高的附着强度，并可像PCB板一样能刻蚀出各种图形，具有很大的载流能力。因此，陶瓷基板已成为大功率电力电子电路结构技术和互连技术的基础材料。具有电阻高、高频特性突出、具有高热导率、化学稳定性佳抗震、耐热、耐压、内部电路、MARK点等比一般电路基板好、在印刷、贴片、焊接时比较精确等优点，是下一代高性能大规模集成电路和5G通信的发射器、汽车通信模块、下一代手机天线、高性能PC服务器等方向。但是由于氧化物陶瓷材料与金属材料的浸润性较差，因此金属和陶瓷基板的结合力不强。因此如何在不改变材料性能的情况下，改善陶瓷材料和金属涂覆层的结合力，是陶瓷材料在大规模集成电路中应用的关键因素。
因此，为了解决陶瓷材料和涂覆金属材料的结合力，改善其稳定性，本专利主要在现有氧化物陶瓷基板中如氧化铝，氧化锆等陶瓷基板中添加氧化铜活化因子，通过等离子烧结技术快速制备具有活化因子的陶瓷PCB基板，以利于后期表面进行活化处理后金属化过程中，大大改善金属和陶瓷的结合力。
发明内容
本发明提供了一种利用等离子烧结技术(SPS)制备陶瓷PCB基板的快速制备方法，所述方法的特征在于，通过在氧化物陶瓷中如氧化铝(Al2O3)，氧化锆ZrO2-3％Y2O3材料添加2～8wt.％氧化铜，快速烧结在低温下制备Al2O3-氧化铜,ZrO2-3％Y2O3-氧化铜复合材料陶瓷PCB基板。
优选地，PCB基板中的所述氧化物陶瓷材料为氧化铝或者氧化钇稳定氧化锆陶瓷材料。
优选地，PCB基板中的活化因子为氧化铜(CuO或者Cu2O)。
优选地，PCB基板的制备技术为等离子烧结技术。优选地，所述等离子烧结技术的特征在于将均匀混合的粉体装入等离子烧结石墨模具中，采用真空或者气氛保护条件下在1000℃～1400℃温度范围烧结，升温速率为50～200℃/min,30～50MPa压力下，保温5～10分钟。保温保压结束后以5～30℃/分钟的冷却速度冷却至室温，脱模后即可得到含氧化铜的氧化物陶瓷PCB基板。
本发明提供了一种制备方法，其特征在于包含以下步骤：
1.将氧化物陶瓷粉体和氧化铜粉按一定比例混合配料，加入玛瑙球用混料机球混1-4小时，得到均匀混合的粉体。
2.均匀混合的粉体装入等离子烧结石墨模具中，采用真空或者气氛保护条件下在1000℃～1400℃温度范围烧结，升温速率为50～200℃/min,30～50MPa压力下，保温5～10分钟。
3.保温保压结束后以5～30℃/分钟的冷却速度冷却至室温，脱模后即可的得到含氧化铜的氧化物陶瓷PCB基板。
所述含氧化铜的陶瓷PCB板经表面处理后，可有效改善后期金属和陶瓷的结合力和粘附力。
本发明成本低，制备工艺简单，周期短。本发明应用于电子材料领域和大规模集成电路领域。
本发明具有以下优点：
1.所用原材料成本低，氧化物材料市场上均有销售，价格便宜。
2.制备工艺简单，周期短本发明的工艺流程简单，在，可在真空气氛或氩气保护气氛下，短时间内,1000-1400℃温度下烧结制备，且厚度根据实际要求进行调整。
3.由于利用的是等离子烧结技术，可抑制材料的晶粒生长，致密度较高，材料的力学性能也大大提高。
4.在常用氧化物陶瓷材料中添加氧化铜，通过激光活化后，表现的活性大大提高，在金属化过程中，金属和陶瓷基板的界面结合力可大大提高。
实施例1
将ZrO2-3％Y2O3和CuO按质量比为(95～98)：(5～2)配料,以玛瑙球和无水酒精为研磨介质，在球磨机混料2小时。然后放入直径为40mm的磨具中，放入等离子烧结炉中，真空气氛，50MPa压力下，以50℃/min的升温速率将炉温升至1200℃，保温时间为5分钟，可得到ZrO2-3％Y2O3-CuO复合材料，见图1。
实施例2
将Al2O3和Cu2O按质量比95：5配料,以玛瑙球和无水酒精为研磨介质，在球磨机混料4小时。然后放入直径为40mm的磨具中，放入等离子烧结炉中，真空气氛，50MPa压力下，以50℃/min的升温速率将炉温升至1400℃，保温时间为5分钟，可得到Al2O3-Cu2O复合材料。
实施例3
将Al2O3和CuO按质量比98：2配料,以玛瑙球和无水酒精为研磨介质，在球磨机混料4小时。然后放入直径为40mm的磨具中，放入等离子烧结炉中，真空气氛，50MPa压力下，以50℃/min的升温速率将炉温升至1400℃，保温时间为5分钟，可得到Al2O3-CuO复合材料。
附图说明
图1的左图为实施例1中ZrO2-3％Y2O3-CuO复合材料中扫面电镜图片和右图为左图中P1的EDS能谱分析。
Claims (5)
1.一种利用等离子烧结技术(SPS)制备陶瓷PCB基板的快速制备方法，所述方法的特征在于，通过在氧化物陶瓷中如氧化铝(Al2O3)，氧化锆ZrO2-3％Y2O3材料添加2～8wt.％氧化铜，快速烧结在低温下制备Al2O3-氧化铜,ZrO2-3％Y2O3-氧化铜复合材料陶瓷PCB基板。
2.根据权利要求1所述的制备方法，其中PCB基板中的所述氧化物陶瓷材料为氧化铝或者氧化钇稳定氧化锆陶瓷材料。
3.根据权利要求1所述的制备方法，所述PCB基板中的活化因子为氧化铜(CuO或者Cu2O)。
4.根据权利要求1所述的制备方法，所述PCB基板的制备技术为等离子烧结技术。
5.根据权利要求4所述的制备方法，所述等离子烧结技术的特征在于将均匀混合的粉体装入等离子烧结石墨模具中，采用真空或者气氛保护条件下在1000oC～1400oC温度范围烧结，升温速率为50～200oC/min,30～50MPa压力下，保温5～10分钟。保温保压结束后以5～30oC/分钟的冷却速度冷却至室温，脱模后即可得到含氧化铜的氧化物陶瓷PCB基板。
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| CN113981433A (zh) * | 2021-11-26 | 2022-01-28 | 成都先进金属材料产业技术研究院股份有限公司 | 用于slm 3d打印的基板及其制作方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6236091A (ja) * | 1985-08-09 | 1987-02-17 | 工業技術院長 | セラミツクスのメタライズ法 |
| CN102776492A (zh) * | 2011-05-13 | 2012-11-14 | 比亚迪股份有限公司 | 一种陶瓷表面选择性金属化方法和一种陶瓷及其应用 |
| US20130337241A1 (en) * | 2011-05-13 | 2013-12-19 | Byd Company Limited | Method for selectively metallizing surface of ceramic substrate, ceramic product and use of ceramic product |
| CN103708831A (zh) * | 2013-09-28 | 2014-04-09 | 雅安远创陶瓷有限责任公司 | 一种氧化钇稳定氧化锆粉体及其制备方法 |
| JP2015214722A (ja) * | 2014-05-08 | 2015-12-03 | 国立大学法人北海道大学 | 銅微粒子焼結体と導電性基板の製造方法 |
| TWM548624U (zh) * | 2017-04-13 | 2017-09-11 | 真環科技有限公司 | 金屬印刷電路板 |
| CN107864560A (zh) * | 2017-05-02 | 2018-03-30 | 武汉华工激光工程有限责任公司 | 一种陶瓷pcb的制造方法及制造得到的pcb |
-
2019
- 2019-06-19 CN CN201910529778.4A patent/CN111517811A/zh active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6236091A (ja) * | 1985-08-09 | 1987-02-17 | 工業技術院長 | セラミツクスのメタライズ法 |
| CN102776492A (zh) * | 2011-05-13 | 2012-11-14 | 比亚迪股份有限公司 | 一种陶瓷表面选择性金属化方法和一种陶瓷及其应用 |
| US20130337241A1 (en) * | 2011-05-13 | 2013-12-19 | Byd Company Limited | Method for selectively metallizing surface of ceramic substrate, ceramic product and use of ceramic product |
| CN103708831A (zh) * | 2013-09-28 | 2014-04-09 | 雅安远创陶瓷有限责任公司 | 一种氧化钇稳定氧化锆粉体及其制备方法 |
| JP2015214722A (ja) * | 2014-05-08 | 2015-12-03 | 国立大学法人北海道大学 | 銅微粒子焼結体と導電性基板の製造方法 |
| TWM548624U (zh) * | 2017-04-13 | 2017-09-11 | 真環科技有限公司 | 金屬印刷電路板 |
| CN107864560A (zh) * | 2017-05-02 | 2018-03-30 | 武汉华工激光工程有限责任公司 | 一种陶瓷pcb的制造方法及制造得到的pcb |
Non-Patent Citations (3)
| Title |
|---|
| ZHOU GUOYUN 等: "Copper induced direct CO2 laser drilling blind hole with the aid of brown oxidation for PCB CCL", 《APPLIED SURFACE SCIENCE》 * |
| 井敏: "金属直接敷接陶瓷基板制备方法与性能研究", 《中国优秀博硕士学位论文全文数据库(硕士) 信息科技辑》 * |
| 刘华珠 等: "陶瓷基印制电路板的关键技术研究", 《印制电路信息》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113981433A (zh) * | 2021-11-26 | 2022-01-28 | 成都先进金属材料产业技术研究院股份有限公司 | 用于slm 3d打印的基板及其制作方法 |
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