CN111510123A - Intelligent switch and driving delay adjusting method thereof - Google Patents
Intelligent switch and driving delay adjusting method thereof Download PDFInfo
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- CN111510123A CN111510123A CN202010367607.9A CN202010367607A CN111510123A CN 111510123 A CN111510123 A CN 111510123A CN 202010367607 A CN202010367607 A CN 202010367607A CN 111510123 A CN111510123 A CN 111510123A
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- delay
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/28—Modifications for introducing a time delay before switching
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
- H03K17/127—Modifications for increasing the maximum permissible switched current in composite switches
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Abstract
The invention discloses an intelligent switch and a driving delay adjusting method thereof, wherein the intelligent switch comprises a wide-band-gap switch device, a silicon switch device and a driving module, a source electrode and a drain electrode of the wide-band-gap switch device are respectively connected with a source electrode and a drain electrode of the silicon switch device, a grid electrode of the wide-band-gap switch device and a grid electrode of the silicon switch device are respectively connected with the driving module, and the driving module is used for sending a first driving signal and a second driving signal which are respectively used for driving the wide-band-gap switch device and the silicon switch device. By adopting the technical scheme of the invention, the intelligent switch with high switching efficiency and low cost can be obtained.
Description
Technical Field
The invention relates to the field of power electronics, in particular to an intelligent switch and a driving delay adjusting method thereof.
Background
In the on-vehicle power electronics of electric automobile, along with the power demand promotion, to the promotion of whole efficiency requirement, can provide high current, power ability, reduce conduction loss through with a plurality of semiconductor switches of connecting in parallel. Meanwhile, with the higher and higher requirements on power density, the requirements on switching frequency are also higher and higher. Silicon devices (e.g. MOSFETs, IGBTs) are known which do not operate such switches at very high switching frequencies due to relatively high switching losses. Wide-bandgap (WBG) devices, such as silicon carbide (SiC) and gallium nitride (GaN) devices, are becoming more popular due to their higher switching frequency capability, lower switching losses than conventional silicon (Si) devices. However, the current capability of WBG devices compared to silicon devices is still not high enough for some applications. High current applications of WBG switches add significantly to the cost. How to balance efficiency and cost in high power and high power density applications is a problem that needs to be solved urgently.
Disclosure of Invention
The invention aims to provide an intelligent switch and a driving delay adjusting method thereof, aiming at the technical problem that the semiconductor switch device in the prior art cannot balance efficiency and cost.
In an embodiment of the present invention, an intelligent switch is provided, which includes a wide bandgap switching device, a silicon switching device, and a driving module, where a source and a drain of the wide bandgap switching device are respectively connected to a source and a drain of the silicon switching device, a gate of the wide bandgap switching device and a gate of the silicon switching device are respectively connected to the driving module, and the driving module is configured to send out a first driving signal and a second driving signal for respectively driving the wide bandgap switching device and the silicon switching device.
In an embodiment of the present invention, the wide bandgap switch device is a silicon carbide switch device or a gallium nitride switch device.
In the embodiment of the invention, the silicon switch device is an MOSFET tube, an IGBT tube or an IGBT tube and a diode which are connected in parallel.
In the embodiment of the present invention, when the intelligent switch is turned on from off, the driving module controls the first driving signal and the second driving signal to be turned from low level to high level, and a time of turning the second driving signal to high level has a first delay with respect to the first driving signal.
In the embodiment of the present invention, when the intelligent switch is turned from on to off, the driving module controls the first driving signal and the second driving signal to be turned from high level to low level, and a time of turning the first driving signal to low level has a second delay with respect to the second driving signal.
In an embodiment of the present invention, a method for adjusting a driving delay of the intelligent switch is further provided, where the method includes:
acquiring the power of the intelligent switch when the intelligent switch is switched on;
and determining the first delay and the second delay according to the power when the intelligent switch is turned on, wherein a relation function of the power of the intelligent switch and the first delay and the second delay is preset in the driving module.
In the embodiment of the invention, the voltage and the current of the intelligent switch are sampled, and the power of the intelligent switch is calculated according to the sampled voltage and current.
In the embodiment of the present invention, the method for adjusting the driving delay of the intelligent switch further includes:
and acquiring the temperature of the intelligent switch, and finely adjusting the first delay and the second delay according to the temperature of the intelligent switch, wherein an adjustment relation function of the temperature of the intelligent switch and the first delay and the second delay is preset in the driving module.
In an embodiment of the present invention, a method for adjusting a driving delay of an intelligent switch is further provided, where the method includes:
acquiring the temperature of the intelligent switch;
determining the first delay time and the second delay time according to the temperature of the intelligent switch, wherein a relation function of the temperature of the intelligent switch and the first delay time and the second delay time is preset in the driving module.
In the embodiment of the present invention, the method for adjusting the driving delay of the intelligent switch further includes:
sampling the voltage and the current of the intelligent switch, and calculating the power of the intelligent switch;
and finely adjusting the first delay and the second delay according to the power of the intelligent switch, wherein a function of an adjusting relation between the power of the intelligent switch and the first delay and the second delay is preset in the driving module.
In summary, in the technical solution of the present invention, the intelligent switch includes a wide bandgap switch device and a silicon switch device, and the high switching speed of the wide bandgap switch device is used to reduce the switching loss, and the large current capacity of the silicon switch device is used to reduce the current loss, so that the loss can be reduced as a whole, the efficiency is improved, and the intelligent switch is simple and easy to implement, has high reliability, and is economical and practical; in addition, the intelligent switch can work in the optimal state by detecting the temperature and the power of the intelligent switch and adjusting the time delay of the driving signals for controlling the wide-bandgap switch device and the silicon switch device.
Drawings
Fig. 1 is a schematic structural diagram of an intelligent switch according to an embodiment of the present invention.
Fig. 2 (a) -2 (f) are schematic structural diagrams of various combinations of the intelligent switch according to the embodiment of the present invention.
Fig. 3 is a waveform diagram of a driving signal of the intelligent switch according to an embodiment of the present invention.
Fig. 4 is a flowchart of a first implementation manner of a driving delay adjustment method for an intelligent switch according to an embodiment of the present invention.
Fig. 5 is a flowchart of a second implementation manner of a driving delay adjustment method for an intelligent switch according to an embodiment of the present invention.
Fig. 6 is a flowchart of a third implementation manner of the driving delay adjustment method of the intelligent switch according to the embodiment of the present invention.
Fig. 7 is a flowchart of a fourth implementation manner of the driving delay adjustment method of the intelligent switch according to the embodiment of the present invention.
Detailed Description
As shown in fig. 1, in a first embodiment of the present invention, an intelligent switch is provided, which includes a wide bandgap switch device 1, a silicon switch device 2 and a driving module 3. The source and drain of the wide bandgap switch device 1 are connected to the source and drain of the silicon switch device 2, respectively, to form a switching path.
The gate of the wide bandgap switching device 1 and the gate of the silicon switching device 2 are connected to the driving module 3, respectively. The driving module 3 is configured to emit a first driving signal Vgs1 and a second driving signal Vgs2 for driving the wide bandgap switching device 1 and the silicon switching device 2, respectively, and the first driving signal Vgs1 and the second driving signal Vgs2 are configured to control the levels of the gate of the wide bandgap switching device 1 and the gate of the silicon switching device 2, respectively, so as to control the on and off of the wide bandgap switching device 1 and the silicon switching device 2. The driving module 3 may be implemented by using a DSP, or may be implemented by combining a DSP with other circuits.
As shown in fig. 2 (a) -2 (f), the wide bandgap switch device 1 is a silicon carbide (SiC) switch device or a gallium nitride (GaN) switch device. The silicon switch device 2 is a MOSFET tube, an IGBT tube or an IGBT tube and a DIODE (DIODE) which are connected in parallel. The wide bandgap switching device 1 and the silicon switching device 2 may be combined in a variety of combinations to form the intelligent switch.
As shown in fig. 3, when the intelligent switch is turned from off to on, the driving module 3 controls the first driving signal Vgs1 and the second driving signal Vgs2 to turn from low level to high level, and the time t2 of the second driving signal Vgs2 turning to high level has a first delay Ton _ delay with respect to the time t1 of the first driving signal Vgs1 turning to high level. When the intelligent switch is switched from on to off, the driving module controls the first driving signal Vgs1 and the second driving signal Vgs2 to be switched from high level to low level, and the time t4 for the first driving signal Vgs1 to be switched to low level has a second delay time Toff _ delay relative to the time t3 for the second driving signal Vgs2 to be switched to low level. By controlling the on-off time of the wide bandgap switch device 1 and the silicon switch device 2, the intelligent switch can be controlled, the switching loss can be reduced by using the high switching speed of the wide bandgap switch device 1, and the through-flow loss can be reduced by using the large through-flow capacity of the silicon switch device 2, so that the switching loss is reduced on the whole, and the switching efficiency is improved.
Fig. 4 is a flowchart illustrating a first implementation manner of a method for adjusting a driving delay of an intelligent switch according to an embodiment of the present invention. The method comprises the following steps:
acquiring the power of the intelligent switch when the intelligent switch is switched on;
the first and second delays Ton _ delay and Toff _ delay are determined according to the power when the smart switch is turned on, wherein a function of the power of the smart switch with respect to the first and second delays Ton _ delay and Toff _ delay is preset in the driving module.
It should be noted that, when the intelligent switch is under different power, the switching efficiency of the intelligent switch can be optimized by using different first delay time Ton _ delay and second delay time Toff _ delay. Therefore, in the driving module 3, a relation function between the power of the intelligent switch and the first delay time Ton _ delay and the second delay time Toff _ delay may be preset, and the relation function may be presented in a table manner or a curve fitting manner. In the embodiment of the invention, the voltage and the current of the intelligent switch are sampled, and the power of the intelligent switch is calculated according to the sampled voltage and current.
Fig. 5 is a flowchart illustrating a second implementation manner of a driving delay adjustment method for an intelligent switch according to an embodiment of the present invention. Compared to the first embodiment, the method further comprises:
acquiring the temperature of the intelligent switch, and finely adjusting the first delay time Ton _ delay and the second delay time Toff _ delay according to the temperature of the intelligent switch, wherein a function of an adjustment relationship between the temperature of the intelligent switch and the first delay time Ton _ delay and the second delay time Toff _ delay is preset in the driving module 3.
It should be noted that, in order to optimize the switching efficiency of the intelligent switch, the first delay time Ton _ delay and the second delay time Toff _ delay may be adjusted according to different temperatures in consideration of the influence of the temperature of the intelligent switch. The adjustment relationship function of the temperature of the smart switch and the first and second delays Ton _ delay and Toff _ delay may be preset in the driving module 3, and a temperature sensor may be provided in the smart switch to detect the temperature of the smart switch.
Fig. 6 is a flowchart illustrating a third implementation manner of the method for adjusting the driving delay of the intelligent switch according to the embodiment of the present invention. The method comprises the following steps:
acquiring the temperature of the intelligent switch;
the first and second delays Ton _ delay and Toff _ delay are determined according to a temperature of the smart switch, wherein a function of the temperature of the smart switch with respect to the first and second delays Ton _ delay and Toff _ delay is preset in the driving module.
Note that, in the present embodiment, the first delay time Ton _ delay and the second delay time Toff _ delay are set only according to the temperature of the smart switch. The relationship function between the temperature of the intelligent switch and the first delay time Ton _ delay and the second delay time Toff _ delay may be represented in a table manner, or may be represented in a manner of fitting a curve.
Fig. 7 is a flowchart illustrating a fourth implementation manner of the method for adjusting the driving delay of the intelligent switch according to the embodiment of the present invention. Compared to the third embodiment, the method further comprises:
sampling the voltage and the current of the intelligent switch, and calculating the power of the intelligent switch;
the first and second delays Ton _ delay and Toff _ delay are fine-tuned according to the power of the smart switch, wherein a function of an adjustment relationship between the power of the smart switch and the first and second delays Ton _ delay and Toff _ delay is preset in the driving module.
In this embodiment, the first delay time Ton _ delay and the second delay time Toff _ delay are determined according to the temperature of the intelligent switch, and then the first delay time Ton _ delay and the second delay time Toff _ delay are finely adjusted according to the power of the intelligent switch.
In summary, in the technical solution of the present invention, the intelligent switch includes a wide bandgap switch device and a silicon switch device, and the high switching speed of the wide bandgap switch device is used to reduce the switching loss, and the large current capacity of the silicon switch device is used to reduce the current loss, so that the loss can be reduced as a whole, the efficiency is improved, and the intelligent switch is simple and easy to implement, has high reliability, and is economical and practical; in addition, the intelligent switch can work in the optimal state by detecting the temperature and the power of the intelligent switch and adjusting the time delay of the driving signals for controlling the wide-bandgap switch device and the silicon switch device.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. An intelligent switch is characterized by comprising a wide band gap switch device, a silicon switch device and a driving module, wherein a source electrode and a drain electrode of the wide band gap switch device are respectively connected with a source electrode and a drain electrode of the silicon switch device, a grid electrode of the wide band gap switch device and a grid electrode of the silicon switch device are respectively connected with the driving module, and the driving module is used for sending out a first driving signal and a second driving signal which respectively drive the wide band gap switch device and the silicon switch device.
2. The smart switch of claim 1 wherein said wide bandgap switching device is a silicon carbide switching device or a gallium nitride switching device.
3. The intelligent switch according to claim 1, wherein the silicon switching device is a MOSFET tube, an IGBT tube or an IGBT tube and a diode in parallel.
4. The intelligent switch of claim 1, wherein the driving module controls the first driving signal and the second driving signal to go from low level to high level when the intelligent switch goes from off to on, and the time for the second driving signal to go high level has a first delay relative to the first driving signal.
5. The intelligent switch of claim 4, wherein the driving module controls the first driving signal and the second driving signal to go from high level to low level when the intelligent switch goes from on to off, and the time for the first driving signal to go to low level has a second delay relative to the second driving signal.
6. A driving delay adjusting method of an intelligent switch according to claim 5, comprising:
acquiring the power of the intelligent switch when the intelligent switch is switched on;
and determining the first delay and the second delay according to the power when the intelligent switch is turned on, wherein a relation function of the power of the intelligent switch and the first delay and the second delay is preset in the driving module.
7. The method of claim 6, wherein the voltage and current of the intelligent switch are sampled, and the power of the intelligent switch is calculated according to the sampled voltage and current.
8. The method for adjusting delay of driving of an intelligent switch according to claim 6, further comprising:
and acquiring the temperature of the intelligent switch, and finely adjusting the first delay and the second delay according to the temperature of the intelligent switch, wherein an adjustment relation function of the temperature of the intelligent switch and the first delay and the second delay is preset in the driving module.
9. A driving delay adjusting method of an intelligent switch according to claim 5, comprising:
acquiring the temperature of the intelligent switch;
determining the first delay time and the second delay time according to the temperature of the intelligent switch, wherein a relation function of the temperature of the intelligent switch and the first delay time and the second delay time is preset in the driving module.
10. The method for adjusting delay in driving of an intelligent switch according to claim 9, further comprising:
sampling the voltage and the current of the intelligent switch, and calculating the power of the intelligent switch;
and finely adjusting the first delay and the second delay according to the power of the intelligent switch, wherein a function of an adjusting relation between the power of the intelligent switch and the first delay and the second delay is preset in the driving module.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010367607.9A CN111510123A (en) | 2020-04-30 | 2020-04-30 | Intelligent switch and driving delay adjusting method thereof |
| PCT/CN2020/101131 WO2021217884A1 (en) | 2020-04-30 | 2020-07-09 | Intelligent switch and driving delay adjustment method therefor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010367607.9A CN111510123A (en) | 2020-04-30 | 2020-04-30 | Intelligent switch and driving delay adjusting method thereof |
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| CN111510123A true CN111510123A (en) | 2020-08-07 |
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| CN202010367607.9A Pending CN111510123A (en) | 2020-04-30 | 2020-04-30 | Intelligent switch and driving delay adjusting method thereof |
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| WO (1) | WO2021217884A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120280728A1 (en) * | 2011-05-02 | 2012-11-08 | Mitsubishi Electric Corporation | Power semiconductor device having plurality of switching elements connected in parallel |
| US20130062626A1 (en) * | 2011-09-08 | 2013-03-14 | Kabushiki Kaisha Toshiba | Power semiconductor module |
| JP2018029258A (en) * | 2016-08-17 | 2018-02-22 | 株式会社デンソー | Transistor drive circuit |
| CN109804539A (en) * | 2016-08-17 | 2019-05-24 | 株式会社电装 | Transistor driver circuit and motor drive control apparatus |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006020405A (en) * | 2004-06-30 | 2006-01-19 | National Institute Of Advanced Industrial & Technology | Semiconductor switch circuit |
| DE102013010188A1 (en) * | 2012-06-21 | 2013-12-24 | Fairchild Semiconductor Corp. | Switching circuit and control circuit |
| US9397657B1 (en) * | 2014-07-24 | 2016-07-19 | Eaton Corporation | Methods and systems for operating hybrid power devices using multiple current-dependent switching patterns |
| CN109698608A (en) * | 2018-12-21 | 2019-04-30 | 江苏固德威电源科技股份有限公司 | A kind of switching device and its control method of use |
-
2020
- 2020-04-30 CN CN202010367607.9A patent/CN111510123A/en active Pending
- 2020-07-09 WO PCT/CN2020/101131 patent/WO2021217884A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120280728A1 (en) * | 2011-05-02 | 2012-11-08 | Mitsubishi Electric Corporation | Power semiconductor device having plurality of switching elements connected in parallel |
| US20130062626A1 (en) * | 2011-09-08 | 2013-03-14 | Kabushiki Kaisha Toshiba | Power semiconductor module |
| JP2018029258A (en) * | 2016-08-17 | 2018-02-22 | 株式会社デンソー | Transistor drive circuit |
| CN109804539A (en) * | 2016-08-17 | 2019-05-24 | 株式会社电装 | Transistor driver circuit and motor drive control apparatus |
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| WO2021217884A1 (en) | 2021-11-04 |
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