CN111509532A - All-solid-state quasi-three-level 228.5nm laser based on V-shaped cavity and annular cavity structure - Google Patents

All-solid-state quasi-three-level 228.5nm laser based on V-shaped cavity and annular cavity structure Download PDF

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CN111509532A
CN111509532A CN202010480146.6A CN202010480146A CN111509532A CN 111509532 A CN111509532 A CN 111509532A CN 202010480146 A CN202010480146 A CN 202010480146A CN 111509532 A CN111509532 A CN 111509532A
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lens
laser
cavity
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level
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赵志斌
曲轶
彭鸿雁
谢琼涛
徐东昕
沈振江
刘国军
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Hainan Normal University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0619—Coatings, e.g. AR, HR, passivation layer
    • H01S3/0621—Coatings on the end-faces, e.g. input/output surfaces of the laser light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
    • H01S3/1673—YVO4 [YVO]

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  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The invention discloses an all-solid-state quasi-three-level 228.5nm laser based on a V-shaped cavity and an annular cavity structure, which sequentially comprises a pumping source, a first coupling optical system, the V-shaped cavity and an annular cavity along the direction of a light path, wherein the V-shaped cavity comprises a first sub-arm, a second sub-arm and a lens M at the intersection of the first sub-arm and the second sub-arm, a laser crystal is arranged on the first sub-arm, and lenses M2 and L BO frequency doubling crystals are sequentially arranged on the second sub-arm.

Description

All-solid-state quasi-three-level 228.5nm laser based on V-shaped cavity and annular cavity structure
Technical Field
The invention relates to the technical field of all-solid-state quasi-three-level lasers, in particular to an all-solid-state quasi-three-level 228.5nm laser based on a V-shaped cavity and annular cavity structure.
Background
At present, with the increasing demand of people on deep ultraviolet lasers with different wave bands, an all-solid-state quasi-three-level deep ultraviolet laser becomes the key point of research in the field of lasers, and as compared with the laser performance of a four-level system, quasi-three-level spectral lines have the disadvantages of reabsorption, small stimulated emission cross section and the like, the frequency doubling efficiency in the deep ultraviolet all-solid-state laser adopting a conventional straight cavity structure is low, the quasi-three-level laser system is difficult to realize deep ultraviolet output, and the actual demand cannot be met.
Therefore, how to provide an all-solid-state quasi-three-level deep ultraviolet laser capable of outputting high-power deep ultraviolet laser is a problem that needs to be solved urgently by those skilled in the art.
Disclosure of Invention
In view of the above, the invention provides an all-solid-state quasi-three-level 228.5nm laser based on a V-shaped cavity and ring cavity structure, which adopts a V-shaped cavity and ring cavity connection structure, can improve the fundamental frequency light output and the efficiency of frequency doubling and frequency quadrupling, and solves the problems that the frequency doubling efficiency is low in a deep ultraviolet all-solid-state laser with a conventional straight cavity structure, and a quasi-three-level laser system is difficult to realize deep ultraviolet output.
In order to achieve the purpose, the invention adopts the following technical scheme:
an all-solid-state quasi-three-level 228.5nm laser based on a V-shaped cavity and ring cavity structure sequentially comprises the following components in the optical path direction: the device comprises a pumping source, a first coupling optical system, a V-shaped cavity and an annular cavity;
the V-shaped cavity comprises a first sub-arm, a second sub-arm and a lens M at the intersection of the first sub-arm and the second sub-arm, wherein the first sub-arm is provided with a laser crystal, and the second sub-arm is sequentially provided with lens M2 and L BO frequency doubling crystals;
the pump source emits pump light, the pump light is shaped through the first coupling optical system and is incident to the laser crystal to generate a spectral line, the spectral line is oscillated in the V-shaped cavity and is subjected to frequency doubling treatment through the L BO frequency doubling crystal to obtain frequency doubled laser, the frequency doubled laser is input to the annular cavity and is subjected to resonant frequency quadruple treatment in the annular cavity, and 228.5nm pulse laser is output.
The invention has the beneficial effects that: this laser instrument utilizes the V die cavity to carry out intracavity frequency doubling to the fundamental frequency light, has improved the power density and the frequency doubling efficiency of fundamental frequency light, utilizes the annular chamber to carry out intracavity resonance quadruple frequency to frequency doubling light simultaneously, has improved the power density and the frequency doubling efficiency of frequency doubling light in the frequency doubling crystal, and the annular chamber is the travelling wave chamber simultaneously, does benefit to single-frequency laser and resonates in the intracavity, has improved frequency doubling efficiency, has finally obtained high power 228.5nm deep ultraviolet laser.
Further, the above all-solid-state quasi-three-level 228.5nm laser based on the V-cavity and ring cavity structure further includes a filter shaping component, and the filter shaping component is disposed between the V-cavity and the ring cavity;
the filtering and shaping component sequentially comprises the following components in the direction of the light path: the double-frequency laser filters stray light through the optical filter, and is incident into the second coupling optical system for shaping after the propagation direction of a light path is adjusted through the reflecting sheet.
The beneficial effect of adopting the further scheme is that: because the double-frequency laser emitted from the V-shaped cavity contains light with various wave bands, the filter is arranged, the laser output from the V-shaped cavity can be filtered, the wave bands of 808nm, 914nm, 1064nm and 1342nm can be filtered, only the wave band of 457nm is left to penetrate through, and after the adjustment and the shaping of the light transmission direction, the number of laser beams emitted into the annular cavity can be reduced, and the efficiency of quadruple frequency treatment is improved.
Furthermore, the length of the first sub-arm is 60 mm-70 mm, and the length of the second sub-arm is 30 mm-35 mm.
Further, the laser crystal is Nd: YVO4 laser crystal, and the size of the Nd: YVO4 laser crystal is 4 × 4 × 5mm3，Nd3+The doping concentration of (a) is 0.1%;
the input end face of the YVO4 laser crystal is plated with a dielectric film M1, the output end face of the YVO4 laser crystal is plated with a dielectric film S2, and the optical parameters of the dielectric film M1 are AR @808nm &1064nm and HR @914 nm; the optical parameters of the dielectric film S2 are AR @914nm &1064nm &1342 nm.
Further, the lens M is made of quartz, the diameter of the lens M is 12.7mm, the light incident surface of the lens M is a concave surface or a plane, and the curvature radius of the concave surface is 500mm, 200mm, 100mm or 50 mm;
the optical parameters of the dielectric films plated on the light incident surface are 10degHR @914nm and 10degAR @1064nm &1342&457 nm; the optical parameter of the dielectric film coated on the emergent surface is 10degAR @457nm &914nm &1064nm &1342 nm.
Further, the lens M2 is made of quartz, the diameter is 12.7mm, the light incident surface of the lens M2 is a concave surface or a plane, and the curvature radius of the concave surface is 600mm, 300mm or 200 mm;
the light incident surface and the light emergent surface of the lens M2 are both plated with dielectric films, and the optical parameters of the dielectric films plated on the light incident surface are as follows: HR @914&457nm, AR @1064&1342 nm; the optical parameters of the dielectric film coated on the light-emitting surface are as follows: AR @457nm &914nm &1064nm &1342 nm.
Further, the size of the L BO frequency doubling crystal is 4 × 4 × 15mm3And the phase matching angle (theta, phi) is (90,21.7), two end faces of the L BO frequency doubling crystal are respectively plated with a dielectric film, and the optical parameters of the dielectric films plated on the two end faces are respectively AR @457nm&914nm&1064nm。
Further, the annular cavity comprises a lens M3, a lens M4, a lens M5, a lens M6 and a BBO frequency doubling crystal, wherein the lens M3 and the lens M4 and the lens M5 and the lens M6 are respectively arranged in a mirror image mode relative to the same vertical central line, and the BBO frequency doubling crystal is arranged between the lens M5 and the lens M6;
the distance between the lens M3 and the lens M4 is 40-50 mm; the distance between the lens M5 and the lens M6 is 70-90 mm; the distance between the lens M3 and the lens M5 is 30 mm.
Furthermore, the lens M3, the lens M4, the lens M5 and the lens M6 are all made of quartz and have the diameter of 12.7mm, and the lens M3 and the lens M4 are both plane mirrors;
the light incident surface of the lens M3 is coated with a film, and the optical parameter of the coated film is T3% @914 nm;
the light incident surface of the lens M4 is plated with a film, and the optical parameter of the plated film is HR @914 nm;
the curvature radius of the lens M5 is 100mm, the light incident surface of the lens M5 is coated with a film, and the optical parameter of the coated film is HR @914 nm;
the curvature radius of the lens M6 is 100mm, the light incoming surface of the lens M6 is coated, and the optical parameters of the coated film are HR @914& AR @228.5 nm.
Further, the size of the BBO frequency doubling crystal is 4 × 4 × 10mm3Phase matching angle of thetapm61.4 degrees and an azimuth angle phi of 0 degrees, wherein the two end faces of the BBO frequency doubling crystal are coated with films, and the optical parameters of the coated films are AR @228nm&457nm。
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an all-solid-state quasi-three-level 228.5nm laser based on a V-cavity and ring cavity structure according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to the accompanying fig. 1, an embodiment of the present invention discloses an all-solid-state quasi-three-level 228.5nm laser based on a V-cavity and ring cavity structure, and the laser sequentially includes, along a light path direction: the device comprises a pumping source 1, a first coupling optical system 2, a V-shaped cavity and an annular cavity;
the V-shaped cavity comprises a first sub-arm, a second sub-arm and a lens M at the intersection of the first sub-arm and the second sub-arm, wherein the first sub-arm is provided with a laser crystal 3, and the second sub-arm is sequentially provided with a lens M2 and a L BO frequency doubling crystal 4;
the pump source 1 emits pump light, the pump light is shaped through the first coupling optical system 2 and is incident on the laser crystal 3 to generate a spectral line, the spectral line oscillates in the V-shaped cavity and is subjected to frequency doubling processing through the L BO frequency doubling crystal 4 to obtain frequency doubled laser, the frequency doubled laser is input into the annular cavity and is subjected to resonance frequency quadruple processing in the annular cavity, and 228.5nm pulse laser is output.
In some embodiments, the above all-solid-state quasi-three-level 228.5nm laser based on the V-cavity and ring-cavity structure further includes a filter shaping component, and the filter shaping component is disposed between the V-cavity and the ring-cavity;
the light filtering and shaping component sequentially comprises in the direction of the light path: the laser device comprises an optical filter 5, a reflector 6 and a second coupling optical system 7, wherein the double-frequency laser filters stray light through the optical filter 5, and enters the second coupling optical system 7 for shaping after the propagation direction of a light path is adjusted through the reflector 6.
Specifically, the length L1 of the first arm section is 60mm to 70mm, and the length L2 of the second arm section is 30mm to 35 mm.
In this embodiment, two independent optical waists are arranged on two arms of the V-cavity, that is, the optical waist of the 914nm laser in the resonant cavity formed by M1-M and the optical waist of the 914nm laser in the resonant cavity formed by M1-M2, and the sizes of the light spots on the laser crystal and the frequency doubling crystal are freely selected, so that the good mode matching and the high frequency doubling efficiency are achieved, and the contradiction between the mode matching and the high-efficiency frequency doubling is effectively solved.
Specifically, the laser crystal 3 is a Nd: YVO4 laser crystal, and the size of the Nd: YVO4 laser crystal is 4 × 4 × 5mm3，Nd3+The doping concentration of (a) is 0.1%;
the input end face of the YVO4 laser crystal is plated with a dielectric film M1, the output end face of the YVO4 laser crystal is plated with a dielectric film S2, and the optical parameters of the dielectric film M1 are AR @808nm &1064nm and HR @914 nm; the optical parameters of the dielectric film S2 are AR @914nm &1064nm &1342 nm.
In the embodiment, YVO4 is a laser crystal with excellent performance and is suitable for manufacturing laser diode pumps, particularly lasers with medium and low power, compared with Nd: YAG, Nd: YVO4 has higher absorption coefficient and larger stimulated emission cross section for pump light, the laser diode pumped Nd: YVO4 crystal can achieve better frequency doubling conversion efficiency by being matched with crystals with high nonlinear coefficients such as L BO, BBO, KTP and the like, and can be manufactured into an all-solid-state laser which outputs near infrared, green, blue, ultraviolet and the like, at present, the YVO4 laser has wide application in multiple fields such as machinery, material processing, wave spectroscopy, wafer inspection, displays, medical detection, laser printing, data storage and the like, and compared with Nd: YAG, YVO4 has the advantages that the pumping bandwidth at about 808nm is about 5 times of that of the Nd: YAG, the emission cross section at 1064nm is 3 of the YAG, the stimulated emission cross section is 3 times of the YAG, and the biaxial polarization line output is high.
Specifically, the lens M is made of quartz, the diameter of the lens M is 12.7mm, the light incident surface of the lens M is a concave surface or a plane, and the curvature radius of the concave surface is 500mm, 200mm, 100mm or 50 mm;
the light incident surface and the light emitting surface of the lens M are both plated with dielectric films, and the optical parameters of the dielectric films plated on the light incident surface are 10degHR @914nm, 10degAR @1064nm &1342&457 nm; the optical parameter of the dielectric film coated on the emergent surface is 10degAR @457nm &914nm &1064nm &1342 nm.
Specifically, the lens M2 is made of quartz, the diameter is 12.7mm, the light incident surface of the lens M2 is a concave surface or a plane, and the curvature radius of the concave surface is 600mm, 300mm or 200 mm;
the incident surface and the emergent surface of the lens M2 are both coated with dielectric films, and the optical parameters of the dielectric films coated on the incident surface are as follows: HR @914&457nm, AR @1064&1342 nm; the optical parameters of the dielectric film coated on the emergent surface are as follows: AR @457nm &914nm &1064nm &1342 nm.
Specifically, the size of the L BO frequency doubling crystal 4 is 4 × 4 × 15mm3The phase matching angle (θ, Φ) — (90,21.7), both end faces of the L BO doubling crystal 4 are coated with dielectric films, and the optical parameters of the dielectric films coated on both end faces are AR @457nm&914nm&1064nm。
Specifically, the annular cavity comprises a lens M3, a lens M4, a lens M5, a lens M6 and a BBO frequency doubling crystal 8, wherein the lens M3 and the lens M4, and the lens M5 and the lens M6 are respectively arranged in a mirror image mode relative to the same vertical central line, and the BBO frequency doubling crystal 8 is arranged between the lens M5 and the lens M6;
the distance L3 from the lens M3 to the lens M4 is 40-50 mm, the distance L4 from the lens M5 to the lens M6 is 70-90 mm, and the distance L5 from the lens M3 to the lens M5 is 30 mm.
Specifically, the lens M3, the lens M4, the lens M5 and the lens M6 are all made of quartz and have the diameter of 12.7mm, and the lens M3 and the lens M4 are both plane mirrors;
coating a film on the light incident surface of the lens M3, wherein the optical parameter of the coated film is T3% @914 nm;
coating a film on the light incident surface of the lens M4, wherein the optical parameter of the coated film is HR @914 nm; preferably, in order to achieve a better effect, a frequency locking controller PZT is further mounted on the M4 in the embodiment;
the curvature radius of the lens M5 is 100mm, the light incident surface of the lens M5 is coated with a film, and the optical parameter of the coated film is HR @914 nm;
the curvature radius of the lens M6 is 100mm, the light incident surface of the lens M6 is coated, and the optical parameter of the coated film is HR @914& AR @228.5 nm.
In particular, the BBO frequency doubling crystal 8 has a size of 4 ×4×10mm3Phase matching angle of thetapmCoating films on two end faces of the BBO frequency doubling crystal with the azimuth angle phi of 0 degrees of 61.4 degrees, wherein the optical parameters of the coated films are AR @228nm&457nm。
In this embodiment, the ring cavity adopts a traveling wave cavity structure, and the traveling wave cavity structure only allows a light beam to pass through in the cavity in a single direction, so that single-frequency laser resonance in the cavity is facilitated, the frequency doubling efficiency is improved, and a standing wave field and a spatial non-uniform effect formed by the light beam in the cavity are eliminated.
The working principle of the laser is explained in detail as follows:
(1) the pump source provides 808nm pump light (i.e. fundamental frequency light);
(2) the first coupling optical system shapes the pump light of 808nm, and the pump light is emitted to the Nd: on the M1 plane of YVO4 laser crystal;
(3) nd: YVO4 laser crystal generates 914nm spectral line;
(4) the 914nm spectral line oscillates among M1, M and M2 to form laser;
(5) l BO frequency doubling crystal frequency-doubles 914nm laser to obtain 457nm laser output;
(6) the filter filters the output laser, and can filter 808nm, 914nm, 1064nm and 1342nm wave bands, and only the 457nm wave band is left to transmit;
(7) the second coupling optical system shapes the 457nm laser light beam and emits the laser light beam into the annular cavity through a lens M3;
(8) the annular cavity consisting of M3, M4, M5 and M6 enables the 457nm laser to be stabilized in the cavity and to be self-reproduced around the circumference;
the BBO frequency doubling crystal doubles the frequency of the 457nm laser, and the 228.5nm laser is obtained and is output from the lens M6.
The all-solid-state quasi-three-level 228.5nm laser with the novel structure disclosed by the embodiment of the invention can be used for detecting heavy metal pollution in soil and detecting anti-cancer drugs such as taxol, cortex dictamni, gliclazide and the like.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. An all-solid-state quasi-three-level 228.5nm laser based on a V-shaped cavity and ring cavity structure is characterized by sequentially comprising the following components in the direction of an optical path: the device comprises a pumping source, a first coupling optical system, a V-shaped cavity and an annular cavity;
the V-shaped cavity comprises a first sub-arm, a second sub-arm and a lens M at the intersection of the first sub-arm and the second sub-arm, wherein the first sub-arm is provided with a laser crystal, and the second sub-arm is sequentially provided with lens M2 and L BO frequency doubling crystals;
the pump source emits pump light, the pump light is shaped through the first coupling optical system and is incident to the laser crystal to generate a spectral line, the spectral line is oscillated in the V-shaped cavity and is subjected to frequency doubling treatment through the L BO frequency doubling crystal to obtain frequency doubled laser, the frequency doubled laser is input to the annular cavity and is subjected to resonant frequency quadruple treatment in the annular cavity, and 228.5nm pulse laser is output.
2. The all-solid-state quasi-three-level 228.5nm laser based on the V-shaped cavity and ring cavity structure as claimed in claim 1, further comprising a filter shaping component, wherein said filter shaping component is disposed between said V-shaped cavity and said ring cavity;
the filtering and shaping component sequentially comprises the following components in the direction of the light path: the double-frequency laser filters stray light through the optical filter, and is incident into the second coupling optical system for shaping after the propagation direction of a light path is adjusted through the reflecting sheet.
3. The all-solid-state quasi-three-level 228.5nm laser based on the V-shaped cavity and ring cavity structure as claimed in claim 1, wherein the length of the first arm is 60 mm-70 mm, and the length of the second arm is 30 mm-35 mm.
4. The all-solid-state quasi-tri-level 228.5nm laser based on the V-cavity and ring cavity structure as claimed in claim 1, wherein the laser crystal is Nd YVO4 laser crystal, and the size of the Nd YVO4 laser crystal is 4 × 4 × 5mm3，Nd3+The doping concentration of (a) is 0.1%;
the input end face of the YVO4 laser crystal is plated with a dielectric film M1, the output end face of the YVO4 laser crystal is plated with a dielectric film S2, and the optical parameters of the dielectric film M1 are AR @808nm &1064nm and HR @914 nm; the optical parameters of the dielectric film S2 are AR @914nm &1064nm &1342 nm.
5. The all-solid-state quasi-three-level 228.5nm laser based on the V-shaped cavity and ring cavity structure as claimed in claim 1, wherein the lens M is made of quartz and has a diameter of 12.7mm, the light incident surface of the lens M is a concave surface or a plane, and the radius of curvature of the concave surface is 500mm, 200mm, 100mm or 50 mm;
the optical parameters of the dielectric films plated on the light incident surface are 10degHR @914nm and 10degAR @1064nm &1342&457 nm; the optical parameter of the dielectric film coated on the emergent surface is 10degAR @457nm &914nm &1064nm &1342 nm.
6. The all-solid-state quasi-three-level 228.5nm laser based on the V-shaped cavity and ring cavity structure as claimed in claim 1, wherein the lens M2 is made of quartz and has a diameter of 12.7mm, the incident surface of the lens M2 is a concave surface or a plane, and the radius of curvature of the concave surface is 600mm, 300mm or 200 mm;
the incident surface and the emergent surface of the lens M2 are both plated with dielectric films, and the optical parameters of the dielectric films plated on the incident surface are as follows: HR @914&457nm, AR @1064&1342 nm; the optical parameters of the dielectric film coated on the emergent surface are as follows: AR @457nm &914nm &1064nm &1342 nm.
7. The all-solid-state quasi-three-level 228.5nm laser based on the V-shaped cavity and ring cavity structure as claimed in claim 1, wherein the size of the L BO frequency doubling crystal is 4 × 4 × 15mm3And the phase matching angle (theta, phi) is (90,21.7), two end faces of the L BO frequency doubling crystal are respectively plated with a dielectric film, and the optical parameters of the dielectric films plated on the two end faces are respectively AR @457nm&914nm&1064nm。
8. The all-solid-state quasi-three-level 228.5nm laser based on the V-cavity and ring-cavity structure as claimed in claim 1, wherein said ring cavity comprises a lens M3, a lens M4, a lens M5, a lens M6 and a BBO frequency doubling crystal, said lenses M3 and M4 and said lenses M5 and M6 are respectively arranged in mirror image relative to the same vertical center line, said BBO frequency doubling crystal is arranged between said lenses M5 and M6;
the distance between the lens M3 and the lens M4 is 40-50 mm; the distance between the lens M5 and the lens M6 is 70-90 mm; the distance between the lens M3 and the lens M5 is 30 mm.
9. The all-solid-state quasi-three-level 228.5nm laser based on the V-shaped cavity and ring cavity structure as claimed in claim 8, wherein the lens M3, the lens M4, the lens M5 and the lens M6 are made of quartz and have a diameter of 12.7mm, and the lens M3 and the lens M4 are flat mirrors;
the light incident surface of the lens M3 is coated with a film, and the optical parameter of the coated film is T3% @914 nm;
the light incident surface of the lens M4 is plated with a film, and the optical parameter of the plated film is HR @914 nm;
the curvature radius of the lens M5 is 100mm, the light incident surface of the lens M5 is coated with a film, and the optical parameter of the coated film is HR @914 nm;
the curvature radius of the lens M6 is 100mm, the light incoming surface of the lens M6 is coated, and the optical parameters of the coated film are HR @914& AR @228.5 nm.
10. The all-solid-state quasi-three-level 228.5nm laser based on the V-cavity and ring cavity structure of claim 8, wherein the BBO frequency doubling crystal has a size of 4 × 4 × 10mm3Phase matching angle of thetapm61.4 degrees and an azimuth angle phi of 0 degrees, wherein the two end faces of the BBO frequency doubling crystal are coated with films, and the optical parameters of the coated films are AR @228nm&457nm。
CN202010480146.6A 2020-05-30 2020-05-30 All-solid-state quasi-three-level 228.5nm laser based on V-shaped cavity and annular cavity structure Pending CN111509532A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113488845A (en) * 2021-06-30 2021-10-08 华中科技大学 Multi-tube blue light semiconductor frequency doubling method and device based on spectrum beam combination

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113488845A (en) * 2021-06-30 2021-10-08 华中科技大学 Multi-tube blue light semiconductor frequency doubling method and device based on spectrum beam combination

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