CN111478167A - All-solid-state quasi-three-energy-level 228.5nm pulse laser with V-shaped cavity - Google Patents

All-solid-state quasi-three-energy-level 228.5nm pulse laser with V-shaped cavity Download PDF

Info

Publication number
CN111478167A
CN111478167A CN202010479774.2A CN202010479774A CN111478167A CN 111478167 A CN111478167 A CN 111478167A CN 202010479774 A CN202010479774 A CN 202010479774A CN 111478167 A CN111478167 A CN 111478167A
Authority
CN
China
Prior art keywords
shaped cavity
pulse laser
laser
arm
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010479774.2A
Other languages
Chinese (zh)
Inventor
赵志斌
曲轶
彭鸿雁
谢琼涛
乔忠良
李再金
李林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hainan Normal University
Original Assignee
Hainan Normal University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hainan Normal University filed Critical Hainan Normal University
Priority to CN202010479774.2A priority Critical patent/CN111478167A/en
Publication of CN111478167A publication Critical patent/CN111478167A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
    • H01S3/0933—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123—Q-switching
    • H01S3/117—Q-switching using intracavity acousto-optic devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The invention discloses an all-solid-state quasi-three-level 228.5nm pulse laser with a V-shaped cavity, which sequentially comprises a semiconductor laser, a coupling optical system, the V-shaped cavity and a nonlinear crystal along a light path direction, wherein the V-shaped cavity comprises a first sub-arm, a second sub-arm and a lens M at the intersection of the first sub-arm and the second sub-arm, the first sub-arm is sequentially provided with a laser crystal and a voice-light Q-switch, the second sub-arm is sequentially provided with lenses M2 and L BO frequency doubling crystals, the semiconductor laser emits pump light, the pump light is shaped by the coupling optical system, a spectrum line is generated by the M1 surface of the laser crystal, the spectrum line obtains double-frequency pulse laser in the V-shaped cavity, and the double-frequency pulse laser is output by the nonlinear frequency doubling crystal to obtain 228.5nm pulse laser.

Description

All-solid-state quasi-three-energy-level 228.5nm pulse laser with V-shaped cavity
Technical Field
The invention belongs to the technical field of lasers, relates to the field of novel structural design of all-solid-state quasi-three-level deep ultraviolet pulse lasers, and particularly relates to an all-solid-state quasi-three-level 228.5nm pulse laser with a V-shaped cavity.
Background
With the demand of people on different bands of deep ultraviolet, people gradually started the research on all-solid-state quasi-three-level deep ultraviolet lasers after 2003. Compared with the laser performance of a four-level system, the quasi-three-level spectral line has the disadvantages of reabsorption, small stimulated emission cross section and the like, and the frequency doubling efficiency is lower in a deep ultraviolet all-solid-state laser adopting a conventional straight cavity structure, so that the quasi-three-level laser system is difficult to realize deep ultraviolet output.
Therefore, how to enable the quasi-three-level laser system to realize deep ultraviolet output is an urgent problem to be solved by practitioners of the same industry.
Disclosure of Invention
The invention aims to provide an all-solid-state quasi-three-level 228.5nm pulse laser with a V-shaped cavity in order to realize deep ultraviolet output of a quasi-three-level laser system.
The all-solid-state quasi-three-level 228.5nm pulse laser with the V-shaped cavity provided by the embodiment of the invention sequentially comprises the following components in the light path direction: the device comprises a semiconductor laser, a coupling optical system, a V-shaped cavity and a nonlinear crystal;
the V-shaped cavity comprises a first sub-arm, a second sub-arm and a lens M at the intersection of the first sub-arm and the second sub-arm, wherein the first sub-arm is sequentially provided with a laser crystal and an acousto-optic Q-switch, and the second sub-arm is sequentially provided with a lens M2 and a L BO frequency doubling crystal;
the semiconductor laser emits pump light, and the pump light is shaped by the coupling optical system; generating a spectral line incident to the M1 plane of the laser crystal; the spectral line obtains double-frequency pulse laser in the V-shaped cavity; the double-frequency pulse laser light is output through the nonlinear crystal to obtain 228.5nm pulse laser.
Further, between the V-shaped cavity and the nonlinear crystal, the method further comprises: the optical filter and the focusing lens are arranged along the light path in sequence;
wherein, the optical filter is a plane mirror, and the coating is as follows: 45degHR @457nm, 45degAR @914nm &1064nm &1342 nm;
the focusing lens is a convex lens, the focal length is f-150 mm, and the coating is AR @457 nm.
The beneficial effect of adopting the further scheme is that: because the double-frequency laser emitted from the V-shaped cavity contains light with various wave bands, the filter is arranged, the laser output from the V-shaped cavity can be filtered, the wave bands of 808nm, 914nm, 1064nm and 1342nm can be filtered, only the wave band of 457nm is left to penetrate through, and after the adjustment and the shaping of the focusing mirror, the number of laser beams emitted into the BBO frequency doubling crystal can be reduced, and the efficiency of quadruple frequency processing is improved.
Further, still include: the beam splitting prism is arranged in the output direction of the optical path of the nonlinear crystal; the thickness of the beam splitter prism is more than 10nm, and the waist length is more than 10 nm; designing a wedge angle, and coating an incidence surface with AR @228.5 nm.
Further, the first sub-arm length L1 is 65mm to 75mm, and the second sub-arm length L2 is 30mm to 35 mm.
Further, the laser crystal is Nd: YVO4, Nd: GdVO4, Nd: Y L F or Nd: YAG.
Furthermore, when the laser crystal is Nd, YVO4, the size is 4 x 5mm3Doped Nd3+The concentration is 0.1%; the input end face of the Nd, YVO4 is plated with a dielectric film M1, the output end face of the Nd, YVO4 is plated with a dielectric film S2, and the optical parameter of the dielectric film M1 is AR @808nm&1064nm, HR @914 nm; the optical parameter of the dielectric film S2 is AR @914nm&1064nm&1342n。
Furthermore, the material of the lens M is quartz, and the diameter of the lens M is 12.7 mm;
the light incident surface of the lens M is a concave surface or a plane, wherein the curvature radius of the concave surface is as follows: 500mm, 200mm, 100mm or 50 mm;
the optical parameters of the dielectric film plated on the light incident surface are 10degHR @914nm and 10degAR @1064nm &1342nm &457 nm; the optical parameters of the dielectric film coated on the light-emitting surface are as follows: 10degAR @457nm &914nm &1064nm &1342 nm.
Furthermore, the lens M2 is made of quartz, and the diameter is 12.7 mm;
the light incident surface of the lens M2 is a concave surface or a plane, wherein the curvature radius of the concave surface is as follows: 600mm, 300mm or 200 mm;
the optical parameters of the dielectric film plated on the light incident surface are HR @914nm &457nm and AR @1064nm &1342 nm; the optical parameters of the dielectric film coated on the light-emitting surface are as follows: AR @457nm &914nm &1064nm &1342 nm.
Further, the L BO frequency doubling crystal size is 4 x 15mm3Angle of phase matching
Figure BDA0002516918920000031
Two end faces of the L BO frequency doubling crystal are plated with dielectric films, and the optical parameters of the dielectric films plated on the two end faces are AR @457nm&914nm&1064nm。
Further, the nonlinear crystal is a BBO frequency doubling crystal with the size of 4 x 10mm3；
Phase matching angle thetapm61.4 ° and 0 ° in azimuth; two end faces of the BBO frequency doubling crystal are plated with dielectric films, and the optical parameters of the dielectric films plated on the two end faces are as follows: AR @228nm&457nm。
The invention has the beneficial effects that:
an all-solid-state quasi-three-level 228.5nm pulse laser with a V-shaped cavity structure utilizes the V-shaped cavity to carry out intracavity double frequency on fundamental frequency light, improves the power density and double frequency efficiency of the fundamental frequency light, and simultaneously two arms of the V-shaped cavity are provided with two independent light waists, thereby effectively solving the contradiction between mode matching and high-efficiency frequency doubling; the efficiency of doubling and quadrupling is improved by using the high peak power of the pulse laser. The laser can be used for detecting heavy metal pollution in soil and detecting anti-cancer drugs such as taxol, dittany bark, gliclazide and the like.
Drawings
Fig. 1 is a schematic structural diagram of an all-solid-state quasi-three-level 228.5nm pulse laser with a V-cavity according to an embodiment of the present invention.
In the attached drawing, a 1-semiconductor laser, a 2-coupling optical system, a 3-V cavity, a 4-nonlinear crystal, a 5-optical filter, a 6-focusing mirror, a 7-beam splitter prism, a 31-laser crystal, a 32-acousto-optic Q-switch and a 33-L BO frequency doubling crystal.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front", "rear", "both ends", "one end", "the other end", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "connected," and the like are to be construed broadly, such as "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
As shown in fig. 1, an all-solid-state quasi-three-level 228.5nm pulse laser with a V-cavity provided in an embodiment of the present invention sequentially includes, along an optical path direction: the device comprises a semiconductor laser 1, a coupling optical system 2, a V-shaped cavity 3 and a nonlinear crystal 4;
the V-shaped cavity 3 comprises a first sub-arm, a second sub-arm and a lens M at the intersection of the first sub-arm and the second sub-arm, the first sub-arm is sequentially provided with a laser crystal 31 and a voice-light Q-switch 32, the second sub-arm is sequentially provided with lenses M2 and a L BO frequency doubling crystal 33, the semiconductor laser 1 emits pump light, the pump light is shaped through a coupling optical system 2, a spectral line is generated after the pump light is incident to an M1 surface of the laser crystal 31, frequency doubling pulse laser is obtained in the V-shaped cavity 3, and the frequency doubling pulse laser is output through a nonlinear crystal 4 to obtain 228.5nm pulse laser.
In the embodiment, the V-shaped cavity is used for carrying out intracavity frequency doubling on the fundamental frequency light, so that the power density and the frequency doubling efficiency of the fundamental frequency light are improved, and meanwhile, two independent light waists are arranged on two arms of the V-shaped cavity, so that the contradiction between mode matching and high-efficiency frequency doubling is effectively solved; the efficiency of doubling and quadrupling is improved by using the high peak power of the pulse laser. The laser can be used for detecting heavy metal pollution in soil and detecting anti-cancer drugs such as taxol, dittany bark, gliclazide and the like.
The following is a detailed description of each of the above components:
(1) the length L1 of the first branch arm of the V-shaped cavity 3 is 65 mm-75 mm, the length L2 of the second branch arm is 30 mm-35 mm, and two independent optical waists are arranged on the two branch arms of the V-shaped cavity, so that the contradiction between mode matching and high-efficiency frequency doubling is effectively solved.
(2) Wherein, the laser crystal 31 on the first branch arm is Nd: YVO4, Nd: GdVO4, Nd: Y L F or Nd: YAG, preferably, when Nd: YVO4 laser crystal is adopted, the size is 4 x 5mm3Doped Nd3+The concentration is 0.1 percent, and the two end surfaces are coated with films M1: AR @808nm&1064nm,HR@914nm、S2:AR@914nm&1064nm&1342 nm; wherein: AR represents high transmittance, HR represents high reflectance;
YVO4, named as neodymium-doped yttrium vanadate, is a laser crystal with excellent performance, is suitable for manufacturing laser diode pumps, particularly lasers with medium and low power, compared with Nd, YAG, YVO4, which has a higher absorption coefficient and a larger stimulated emission cross section for pump light, and laser diode pumped Nd, YVO4, is matched with crystals with high nonlinear coefficients such as L BO, BBO and KTP, so that the laser diode pumps can achieve better frequency doubling conversion efficiency, and can be manufactured into all-solid-state lasers outputting near infrared, green, blue to ultraviolet rays and the like.
(3) A lens M: the material is quartz, and the diameter is 12.7 mm; the light incident surface of the lens M is a concave surface or a plane, wherein the curvature radius of the concave surface is as follows: 500mm, 200mm, 100mm or 50 mm; the light incident surface of the lens M is plated with a dielectric film, and the optical parameters of the plated dielectric film are 10degHR @914nm and 10degAR @1064nm &1342nm &457 nm; the optical parameters of the dielectric film coated on the light-emitting surface are as follows: 10degAR @457nm &914nm &1064nm &1342 nm; wherein deg represents a deflection angle.
(4) Lens M2: the material is quartz, and the diameter is 12.7 mm; the light incident surface of the lens M2 is a concave surface or a plane, wherein the radius of curvature of the concave surface is: 600mm, 300mm or 200 mm; the light incident surface of the lens M2 is plated with a dielectric film, and the optical parameters of the plated dielectric film are HR @914nm &457nm and AR @1064nm &1342 nm; the optical parameters of the dielectric film coated on the light-emitting surface are as follows: AR @457nm &914nm &1064nm &1342 nm;
(5) l BO frequency doubling crystal 33 with size 4 x 15mm3Angle of phase matching
Figure BDA0002516918920000061
Two end face coating films, S1, S2: AR @457nm&914nm&1064nm；
(6) Acousto-optic Q-switch 32: the two end faces are coated with films AR @914nm &457 nm;
(7) the nonlinear crystal 4 is a BBO frequency doubling crystal: size 4 x 10mm3Angle of phase matching thetapm61.4 degrees, azimuth phi 0 degrees, two end face coating films S1, S2 AR @228nm&457nm；
(8) The filter 5 is a plane mirror, and is coated with a film: 45degHR @457nm, 45degAR @914nm &1064nm &1342 nm;
(9) the focusing lens 6 is a convex lens, the focal length f is 150mm, and the coating AR @457 nm;
(10) beam splitter prism 7: thickness is greater than 10mm, and waist length is greater than 10mm, and the wedge angle design: high transmittance to 228nm angle distribution;
the all-solid-state quasi-three-level 228.5nm pulse laser with the V-shaped cavity provided by the embodiment of the invention has the following working principle:
1. the semiconductor laser provides 808nm pump light; the semiconductor laser with small volume and long service life is selected, so that the whole laser has small volume, can be pumped by adopting a simple current injection mode, and has working voltage and current compatible with an integrated circuit.
2. The coupling optical system shapes the pump light with 808nm, and the pump light is emitted to the Nd: on the M1 plane of YVO4 laser crystal;
3. nd: YVO4 laser crystal generates 914nm spectral line;
4. the V-shaped cavity is formed by M1, M and M2, and a 914nm spectral line oscillates in the V-shaped cavity to form laser; the optical waist of the 914nm laser in the cavity formed by M1-M. The optical waist of the 914nm laser in the cavity formed by M1-M2. The sizes of light spots on the laser crystal and the frequency doubling crystal are freely selected, so that good mode matching and high frequency doubling efficiency are achieved.
5. Regulating Q of the 914nm laser by an acousto-optic modulator to obtain 914nm pulse laser;
6. the L BO crystal doubles frequency of 914nm pulse laser to obtain 457nm pulse laser output;
7. the filter filters the output laser, and can filter 808nm, 914nm, 1064nm and 1342nm wave bands, and only the 457nm wave band is left to transmit;
8. the 457nm laser beam is shaped by the focusing mirror and is emitted to the end face of the BBO crystal;
9. the BBO crystal carries out frequency doubling on 457nm pulse laser to obtain 228.5nm pulse laser;
10. the 228.5nm and 457nm pulse lasers are separated by the beam splitter prism, and then 228.5nm pulse lasers are obtained.
According to the all-solid-state quasi-three-level 228.5nm pulse laser with the V-shaped cavity structure, the V-shaped cavity is used for carrying out intracavity frequency doubling on the fundamental frequency light, the power density and the frequency doubling efficiency of the fundamental frequency light are improved, and meanwhile two arms of the V-shaped cavity are provided with two independent light waists, so that the contradiction between mode matching and high-efficiency frequency doubling is effectively solved; the efficiency of doubling and quadrupling is improved by using the high peak power of the pulse laser. The laser can be used for detecting heavy metal pollution in soil and detecting anti-cancer drugs such as taxol, dittany bark, gliclazide and the like.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. An all-solid-state quasi-three-energy-level 228.5nm pulse laser with a V-shaped cavity is characterized by sequentially comprising the following components in the direction of an optical path: the device comprises a semiconductor laser, a coupling optical system, a V-shaped cavity and a nonlinear crystal;
the V-shaped cavity comprises a first sub-arm, a second sub-arm and a lens M at the intersection of the first sub-arm and the second sub-arm, wherein the first sub-arm is sequentially provided with a laser crystal and an acousto-optic Q-switch, and the second sub-arm is sequentially provided with a lens M2 and a L BO frequency doubling crystal;
the semiconductor laser emits pump light, and the pump light is shaped by the coupling optical system; generating a spectral line incident to the M1 plane of the laser crystal; the spectral line obtains double-frequency pulse laser in the V-shaped cavity; the double-frequency pulse laser light is output through the nonlinear crystal to obtain 228.5nm pulse laser.
2. The all-solid-state quasi-three-level 228.5nm pulse laser with a V-shaped cavity according to claim 1, wherein: between the V-shaped cavity and the nonlinear crystal, the method further comprises the following steps: the optical filter and the focusing lens are arranged along the light path in sequence;
wherein, the optical filter is a plane mirror, and the coating is as follows: 45degHR @457nm, 45degAR @914nm &1064nm &1342 nm;
the focusing lens is a convex lens, the focal length is f-150 mm, and the coating is AR @457 nm.
3. The all-solid-state quasi-three-level 228.5nm pulse laser with a V-shaped cavity according to claim 1, wherein: further comprising: the beam splitting prism is arranged in the output direction of the optical path of the nonlinear crystal; the thickness of the beam splitter prism is more than 10nm, and the waist length is more than 10 nm; designing a wedge angle, and coating an incidence surface with AR @228.5 nm.
4. The all-solid-state quasi-three-level 228.5nm pulse laser with V-shaped cavity as claimed in claim 1, wherein said first arm-length L1 is 65 mm-75 mm, and said second arm-length L2 is 30 mm-35 mm.
5. The all-solid-state quasi-tri-level 228.5nm pulse laser with the V-shaped cavity as claimed in claim 1, wherein the laser crystal is Nd: YVO4, Nd: GdVO4, Nd: Y L F or Nd: YAG.
6. Root of herbaceous plantThe all-solid-state quasi-three-level 228.5nm pulse laser with a V-shaped cavity according to claim 5, wherein: YVO4, the size is 4 x 5mm3Doped Nd3+The concentration is 0.1%; the input end face of the Nd, YVO4 is plated with a dielectric film M1, the output end face of the Nd, YVO4 is plated with a dielectric film S2, and the optical parameter of the dielectric film M1 is AR @808nm&1064nm, HR @914 nm; the optical parameter of the dielectric film S2 is AR @914nm&1064nm&1342n。
7. The all-solid-state quasi-three-level 228.5nm pulse laser with a V-shaped cavity according to claim 1, wherein: the lens M is made of quartz and has the diameter of 12.7 mm;
the light incident surface of the lens M is a concave surface or a plane, wherein the curvature radius of the concave surface is as follows: 500mm, 200mm, 100mm or 50 mm;
the optical parameters of the dielectric film plated on the light incident surface are 10degHR @914nm and 10degAR @1064nm &1342nm &457 nm; the optical parameters of the dielectric film coated on the light-emitting surface are as follows: 10degAR @457nm &914nm &1064nm &1342 nm.
8. The all-solid-state quasi-three-level 228.5nm pulse laser with a V-shaped cavity according to claim 1, wherein: the lens M2 is made of quartz and has a diameter of 12.7 mm;
the light incident surface of the lens M2 is a concave surface or a plane, wherein the curvature radius of the concave surface is as follows: 600mm, 300mm or 200 mm;
the optical parameters of the dielectric film plated on the light incident surface are HR @914nm &457nm and AR @1064nm &1342 nm; the optical parameters of the dielectric film coated on the light-emitting surface are as follows: AR @457nm &914nm &1064nm &1342 nm.
9. The all-solid-state quasi-three-level 228.5nm pulse laser with V-shaped cavity as claimed in claim 1, wherein said L BO frequency doubling crystal size is 4 x 15mm3Angle of phase matching
Figure FDA0002516918910000021
Two end faces of the L BO frequency doubling crystal are both plated with dielectric films, and the optical parameters of the dielectric films plated on the two end faces are both AR @457nm&914nm&1064nm。
10. The all-solid-state quasi-three-level 228.5nm pulse laser with a V-shaped cavity according to claim 1, wherein: the nonlinear crystal is BBO frequency doubling crystal with size of 4 × 10mm3；
Phase matching angle thetapm61.4 ° and 0 ° in azimuth; two end faces of the BBO frequency doubling crystal are plated with dielectric films, and the optical parameters of the dielectric films plated on the two end faces are as follows: AR @228nm&457nm。
CN202010479774.2A 2020-05-30 2020-05-30 All-solid-state quasi-three-energy-level 228.5nm pulse laser with V-shaped cavity Pending CN111478167A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010479774.2A CN111478167A (en) 2020-05-30 2020-05-30 All-solid-state quasi-three-energy-level 228.5nm pulse laser with V-shaped cavity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010479774.2A CN111478167A (en) 2020-05-30 2020-05-30 All-solid-state quasi-three-energy-level 228.5nm pulse laser with V-shaped cavity

Publications (1)

Publication Number Publication Date
CN111478167A true CN111478167A (en) 2020-07-31

Family

ID=71765123

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010479774.2A Pending CN111478167A (en) 2020-05-30 2020-05-30 All-solid-state quasi-three-energy-level 228.5nm pulse laser with V-shaped cavity

Country Status (1)

Country Link
CN (1) CN111478167A (en)

Similar Documents

Publication Publication Date Title
CN106229806B (en) The tunable alaxadrite laser of Raman yellow light pumping
JP4883503B2 (en) Laser device using multi-path solid slab laser rod or nonlinear optical crystal
WO2008055390A1 (en) Third harmonic ultraviolet laser of semiconductor double end face pumping
US10630044B2 (en) Frequency-doubled laser and method of generating harmonic laser
CN210201151U (en) All-solid-state green laser
JP2012515935A (en) Novel optical devices based on conical refraction
JP4231829B2 (en) Internal cavity sum frequency mixing laser
JP4407039B2 (en) Solid-state laser device and solid-state laser device system
US7639721B2 (en) Laser pumped tunable lasers
WO2007079661A1 (en) A Nd:LuVO4 LASER HAVING A WAVELENGTH OF 916nm
CN213278684U (en) Laser with adjustable power proportion and pulse interval
CN112186478A (en) Laser with adjustable power proportion and pulse interval and method
CN108923236B (en) Vanadate crystal laser based on neodymium ion doping
CN212412425U (en) All-solid-state quasi-three-energy-level 228.5nm pulse laser with V-shaped cavity
CN111478167A (en) All-solid-state quasi-three-energy-level 228.5nm pulse laser with V-shaped cavity
CN111509532A (en) All-solid-state quasi-three-level 228.5nm laser based on V-shaped cavity and annular cavity structure
CN114597758A (en) Active Q-adjusting internal cavity type Nd-YAG ceramic/BaWO4Dual-wavelength Raman laser
CN212412424U (en) All-solid-state quasi-three-level 228.5nm laser based on V-shaped cavity and annular cavity
CN111541141A (en) 248nm single-frequency all-solid-state deep ultraviolet seed laser based on emerald sapphire crystal for KrF excimer laser
US7627016B2 (en) Laser pumped tunable lasers
CN116544767B (en) Continuous wave ultraviolet solid laser with narrow beam waist
CN106941239B (en) Laser-doubled efficiency-adjusted method
CN215816816U (en) High-power 755nm nanosecond laser
CN213341067U (en) Device for realizing narrow linewidth output based on optical parametric oscillator
CN212485790U (en) All-solid-state Raman frequency doubling deep red laser

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination