CN111508861A - 半导体元件贴合设备 - Google Patents
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Abstract
本发明关于一种半导体元件贴合设备,包括:一基座;一基板检测机构,设于该基座并包括一第一对位平台及一第一检测模组;一框架检测机构,设于该基座并包括一第二对位平台及一第二检测模组;以及一第一拿取装置。该设备可快速将排列于该框件上的该些半导体元件贴合于该基板的该些导电线路,且可供雷射焊接或其它快速焊接方式将该些半导体元件与该些导电线路进行焊接,因此可提高半导体产业的制程速度及降低成本。
Description
技术领域
本发明有关于一种半导体元件贴合设备。
背景技术
一般半导体产业制程中,晶粒厂透过晶粒分选机,将晶粒排列于胶膜(Tape)上,出货给下游固晶厂,固晶厂使用贴件机方式(Pick and Place),将晶片逐个摆放固定于线路基板上,过程中还需要点上锡膏等可固晶且又可导电的膏状有粘性介质,而后才将整片固晶后的导电板经过回流焊接(Reflow)制程进行加热固化。
然而,在此类习知制造过程具有下述缺点,1.Reflow制程温度上升曲线慢,一颗晶片上至少有2个回焊点的固化反应时间不一,容易使得晶粒翘起形成不良,2.Reflow制程无法针对单一不良晶粒进行修补或重工,重工整片会进而影响其他回焊正常的晶片,3.小于3密耳(mil)的晶粒,点胶技术良率难以突破,4.经过分选机、固晶机2次的Pick and Place制程作业时间慢、设备投资成本相当庞大,存在亟待改善的缺弊。
因此,有必要提供一种新颖且具有进步性的半导体元件贴合设备,以解决上述问题。
发明内容
本发明的主要目的在于提供一种半导体元件贴合设备,将半导体元件依照线路基板接合点间距排列于Tape上,可直接进行Tape与导电基板的贴合,以供如雷射光等加热方式进行穿透式扫描焊接,其优点为:1.可减少LED等半导体元件回焊难以克服的异常问题,取代现有固晶机、Reflow设备,2.无须再次依电路板位置,由固晶设备对晶粒做Pick andPlace作业,可直接由晶粒分选段的Tape膜进行真空贴合巨量转移,以显示屏动辄数千万颗的晶粒,速度远高于Pick and Place数万倍,可节省许多制程时间。
为达成上述目的,本发明提供一种半导体元件贴合设备,其包括一基座、一基板检测机构、一框架检测机构及一第一拿取装置。该基座定义相互垂直的一X轴、一Y轴及一Z轴。该基板检测机构设于该基座并包括一第一对位平台及一第一检测模组,该第一对位平台可沿该Z轴转动并供置放一基板,该基板设有复数导电线路,该第一检测模组供检测扫描该基板,该第一对位平台供将该基板转动并对位至一第一预定角度。该框架检测机构设于该基座并包括一第二对位平台及一第二检测模组,该第二对位平台可沿该Z轴转动并供置放一框架,该框架设有一贴膜及排列设于该贴膜的复数半导体元件,该第二检测模组供检测扫描该框架,该第二对位平台供将该框架转动并对位至一第二预定角度,该导电线路或该些半导体元件预先设有复数焊料。该第一拿取装置供将对位至该第一预定角度的基板及对位至该第二预定角度的框架其中一者拿取,并贴合至另一者以形成一贴合成品,以使该框架的各该半导体元件精准贴合于该基板的该些导电线路,各该焊料分别与该半导体元件及该导电线路相接触。
附图说明
图1为本发明一较佳实施例的立体图。
图2为本发明一较佳实施例的俯视图。
图3及图4为本发明一较佳实施例的贴合成品立体示意图。
图5及图6为本发明一较佳实施例的贴合成品侧视示意图。
图7为本发明一较佳实施例的另一立体图。
具体实施方式
以下仅以实施例说明本发明可能的实施态样,然并非用以限制本发明所欲保护的范畴,合先叙明。
请参考图1至图7,其显示本发明的一较佳实施例,本发明的半导体元件贴合设备1包括一基座2、一基板检测机构3、一框架检测机构4及一第一拿取装置11。
该基座2定义相互垂直的一X轴L1、一Y轴L2及一Z轴L3。
该基板检测机构3设于该基座2并包括一第一对位平台31及一第一检测模组32,该第一对位平台31可沿该Z轴L3转动并供置放一基板91,该基板91设有复数导电线路911,该第一检测模组32供检测扫描该基板91,该第一对位平台31供将该基板91转动并对位至一第一预定角度。
该框架检测机构4设于该基座2并包括一第二对位平台41及一第二检测模组42,该第二对位平台41可沿该Z轴L3转动并供置放一框架92,该框架92设有一贴膜921及排列设于该贴膜921的复数半导体元件922,于本实施例中该半导体元件922为LED晶粒,该第二检测模组42供检测扫描该框架92,该第二对位平台41供将该框架92转动并对位至一第二预定角度,该导电线路911或该些半导体元件922预先设有复数焊料93,于本实施例中该些焊料93设于该些半导体元件922。
另外一提的是,于本实施例中该第一检测模组32与该第二检测模组42为感光耦合元件(CCD)感应器,该第一检测模组32供扫描对位该基板91的导电线路911,该第二检测模组42供扫描对位该些半导体元件922的排列,以达到准确对位的效果。详细地说,该第一检测模组32除了针对该基板2做转正、基准点定位,亦可针对该基板2的该些导电线路的布线位置精度进行检察,检测方法是由CCD对该基板2的该些导电线路特征点取像、定位,并取得特征点座标进行容许误差比对,可监控该基板上该些导电线路的复数焊接点的该X轴L1、该Y轴L2、该Z轴L3相对于该基板上的基准点的容许偏差量进行检查,检测异常时可及时提示,不进行异常的该基板的贴合作业。该第二检测模组42除了针对该贴膜921上的该些半导体元件922做转正、基准点定位,亦可针对该贴膜921上的该些半导体元件922位置精度进行检察,其监控方法是由CCD对该贴模921上的该些半导体元922件取像定位,并取得该些半导体元件922特征点坐标进行容许误差比对,可监控该些半导体元件922的该X轴L1、该Y轴L2,角度误差相对于基准点的容许偏差量,当监控异常时可及时提示,不进行异常的该该框架92的贴合作业。
该第一拿取装置11供将对位至该第一预定角度的基板91及对位至该第二预定角度的框架92其中一者拿取,并贴合至另一者以形成一贴合成品94(于本实施例中该第一拿取装置11是拿取该框架92并贴合于该基板91),值得一提的是,于本实施例中该半导体元件贴合设备1另设有一贴合监控模组16(如图7所示),以在贴合该基板91与该框架4过程中进行监控,以确认该些半导体元件922顺利地贴合于该些导电线路911,详细地说,其检测方法是由CCD对该框架92上的该基板2与该些半导体元件922贴合后的复数个特征点取像定位,并取得该基板2与该些半导体元件922特征点坐标进行容许误差比对,监控贴合后的该些半导体元件922的X轴L1、Y轴L2、Z轴L3相对于贴合后的该基板2上的基准点的容许偏差量。监控异常时可及时纪录,将贴合异常的该框架92放回该框架盒座96内,并提示人员进行贴合纠错检查。
要说明的是,于本实施例中该第一拿取装置11可选择性地沿X轴L1及Z轴L3移动,该第一拿取装置11为吸盘,该第一拿取装置11将该基板91与该框架92沿该Z轴L3的方向相贴合,以使该框架92的各该半导体元件922精准贴合于该基板91的该些导电线路911,各该焊料93分别与该半导体元件922及该导电线路911相接触。由此,该贴合成品94即可供雷射光等加热方式进行穿透式扫描焊接,以将该些半导体元件922焊接于该些导电线路911,因此该半导体元件贴合设备1相较习知贴件机方式以Pick and Place作业及回流焊接(Reflow)制程具有较快速的制程。该基板91可为可透光或不可透光的陶瓷板、硅晶板、PCB板、玻璃板或蓝宝石板,该贴模921材质可为PE蓝膜、UV膜或其它可透光且可挠曲的贴膜,该些半导体元件922无需上胶及可粘贴于该贴膜911,因此具有较简单的制程,该些焊料93可以印刷、点胶、电镀或蚀刻的方式设于该些半导体元件上,以提升效率。
于本实施例中该第一对位平台31及该第二对位平台41另可选择性地沿该X轴L1、Y轴L2移动。
较佳地,该基座2另设有一基板拿取手臂12,该基板拿取手臂12供自一晶座盒95拿取一该基板91并置放于该第一对位平台31。于本实施例中该基座2另设有一第一粗对位平台14,该基板拿取手臂12先将该基板91置放于该第一粗对位平台14进行粗对位后,再将该基板91置放于该第一对位平台31,可节省该第一对位平台31的作业时间。
该基座2另设有一框架拿取手臂13及一中继平台15,该中继平台15及该框架拿取手臂13可沿该Y轴L2方向移动,该框架拿取手臂13供自一框架盒座96拿取一该框架92并置放于该中继平台15,该第一拿取装置11再将该框架92自该中继平台15拿取并置放于该第二对位平台41,该第一拿取装置11另供将该贴合成品94自该第二对位平台41拿取,并置放回该中继平台15,该框架拿取手臂13即可将该贴合成品94自该中继平台15拿取并放置于该框架盒座96,以供下一焊接制程使用。于本实施例中该框架拿取手臂13为一夹具131,该框架拿取手臂13可选择性地沿该Y轴L2移动,该贴合监控模组16设于该中继平台15与该框架盒座96之间。
综上,本发明半导体元件贴合设备,可快速将排列于该框架上的该些半导体元件贴合于该基板的该些导电线路,以进行雷射焊接将该些半导体元件与该些导电线路进行焊接,利用贴膜可一次贴合巨量(数千至数千万颗)的1至80密耳等小尺寸的半导体元件的贴合,并通过雷射焊接焊接巨量半导体元件,因此可提高半导体产业的制程速度及降低成本。
以上所述是本发明的较佳实施例及其所运用的技术原理,对于本领域的技术人员来说,在不背离本发明的精神和范围的情况下,任何基于本发明技术方案基础上的等效变换、简单替换等显而易见的改变,均属于本发明保护范围之内。
Claims (10)
1.一种半导体元件贴合设备,其特征在于,包括:
一基座,定义相互垂直的一X轴、一Y轴及一Z轴;
一基板检测机构,设于该基座并包括一第一对位平台及一第一检测模组,该第一对位平台可沿该Z轴转动并供置放一基板,该基板设有复数导电线路,该第一检测模组供检测扫描该基板,该第一对位平台供将该基板转动并对位至一第一预定角度;
一框架检测机构,设于该基座并包括一第二对位平台及一第二检测模组,该第二对位平台可沿该Z轴转动并供置放一框架,该框架设有一贴膜及排列设于该贴膜的复数半导体元件,该第二检测模组供检测扫描该框架,该第二对位平台供将该框架转动并对位至一第二预定角度,该导电线路或该些半导体元件预先设有复数焊料;
一第一拿取装置,供将对位至该第一预定角度的基板及对位至该第二预定角度的框架其中一者拿取,并贴合至另一者以形成一贴合成品,以使该框架的各该半导体元件精准贴合于该基板的该些导电线路,各该焊料分别与该半导体元件及该导电线路相接触。
2.如权利要求1所述的半导体元件贴合设备,其特征在于,该第一对位平台另可选择性地沿该X轴、Y轴移动。
3.如权利要求1所述的半导体元件贴合设备,其特征在于,该第二对位平台另可选择性地沿该X轴、Y轴移动。
4.如权利要求1所述的半导体元件贴合设备,其特征在于,该基座另设有一基板拿取手臂,该基板拿取手臂供自一晶座盒拿取一该基板并置放于该第一对位平台。
5.如权利要求4所述的半导体元件贴合设备,其特征在于,该基座另设有一第一粗对位平台,该基板拿取手臂先将该基板置放于该第一粗对位平台进行粗对位后,再将该基板置放于该第一对位平台。
6.如权利要求1所述的半导体元件贴合设备,其特征在于,该基座另设有一框架拿取手臂及一中继平台,该框架拿取手臂供自一框架盒座拿取一该框架并置放于该中继平台,该第一拿取装置再将该框架自该中继平台拿取并置放于该第二对位平台,该第一拿取装置另供将该贴合成品自该第二对位平台拿取,并置放回该中继平台,该框架拿取手臂即可将该贴合成品自该中继平台拿取并放置于该框架盒座。
7.如权利要求6所述的半导体元件贴合设备,其特征在于,该框架拿取手臂为一夹具,该框架拿取手臂可选择性地沿该Y轴移动。
8.如权利要求1至7其中任一项所述的半导体元件贴合设备,其特征在于,该第一拿取装置可选择性地沿X轴及Z轴移动,该第一拿取装置为吸盘,该第一拿取装置将该基板与该框架沿该Z轴的方向相贴合。
9.如权利要求1至7其中任一项所述的半导体元件贴合设备,其特征在于,该第一检测模组为感光耦合元件(CCD)感应器,该第一检测模组供扫描对位该基板的导电线路,该第二检测模组为感光耦合元件(CCD)感应器,该第二检测模组供扫描对位该些半导体元件的排列。
10.如权利要求1至7其中任一项所述的半导体元件贴合设备,其特征在于,该半导体元件贴合设备另设有一贴合监控模组,以在贴合该基板与该框架过程中进行监控,以确认该些半导体元件顺利地贴合于该些导电线路。
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CN115579440A (zh) * | 2022-12-09 | 2023-01-06 | 惠科股份有限公司 | Led芯片、刷料装置及led芯片的刷料固晶方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101828250A (zh) * | 2007-08-15 | 2010-09-08 | 株式会社尼康 | 定位装置、贴合装置、层叠基板制造装置、曝光装置及定位方法 |
JP2012069627A (ja) * | 2010-09-22 | 2012-04-05 | Hitachi High-Tech Instruments Co Ltd | ダイボンディング装置とボンディング方法 |
WO2012133760A1 (ja) * | 2011-03-30 | 2012-10-04 | ボンドテック株式会社 | 電子部品実装方法、電子部品実装システムおよび基板 |
US20160126218A1 (en) * | 2014-10-30 | 2016-05-05 | Kabushiki Kaisha Toshiba | Bonding method of semiconductor chip and bonding apparatus of semiconductor chip |
CN106971970A (zh) * | 2017-04-28 | 2017-07-21 | 东莞市安达自动化设备有限公司 | 一种用于半导体贴膜的贴合机 |
CN108257900A (zh) * | 2016-12-28 | 2018-07-06 | 惠特科技股份有限公司 | 半导体制程输送系统及方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000068687A (ja) * | 1998-08-26 | 2000-03-03 | Sony Corp | チップ部品のマウント装置 |
JP4361572B2 (ja) * | 2007-02-28 | 2009-11-11 | 株式会社新川 | ボンディング装置及び方法 |
KR100924548B1 (ko) * | 2007-11-09 | 2009-11-02 | 주식회사 하이닉스반도체 | 다이 본딩 장치 |
WO2017008254A1 (en) * | 2015-07-14 | 2017-01-19 | Goertek. Inc | Transferring method, manufacturing method, device and electronic apparatus of micro-led |
US10446532B2 (en) * | 2016-01-13 | 2019-10-15 | Invensas Bonding Technologies, Inc. | Systems and methods for efficient transfer of semiconductor elements |
-
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101828250A (zh) * | 2007-08-15 | 2010-09-08 | 株式会社尼康 | 定位装置、贴合装置、层叠基板制造装置、曝光装置及定位方法 |
JP2012069627A (ja) * | 2010-09-22 | 2012-04-05 | Hitachi High-Tech Instruments Co Ltd | ダイボンディング装置とボンディング方法 |
WO2012133760A1 (ja) * | 2011-03-30 | 2012-10-04 | ボンドテック株式会社 | 電子部品実装方法、電子部品実装システムおよび基板 |
US20160126218A1 (en) * | 2014-10-30 | 2016-05-05 | Kabushiki Kaisha Toshiba | Bonding method of semiconductor chip and bonding apparatus of semiconductor chip |
CN108257900A (zh) * | 2016-12-28 | 2018-07-06 | 惠特科技股份有限公司 | 半导体制程输送系统及方法 |
CN106971970A (zh) * | 2017-04-28 | 2017-07-21 | 东莞市安达自动化设备有限公司 | 一种用于半导体贴膜的贴合机 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112366268A (zh) * | 2020-11-20 | 2021-02-12 | 深圳中科精工科技有限公司 | 一种高密度led固晶工艺 |
CN115579440A (zh) * | 2022-12-09 | 2023-01-06 | 惠科股份有限公司 | Led芯片、刷料装置及led芯片的刷料固晶方法 |
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