CN111508824B - 一种制绒清洗方法及异质结电池 - Google Patents
一种制绒清洗方法及异质结电池 Download PDFInfo
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- CN111508824B CN111508824B CN202010552112.3A CN202010552112A CN111508824B CN 111508824 B CN111508824 B CN 111508824B CN 202010552112 A CN202010552112 A CN 202010552112A CN 111508824 B CN111508824 B CN 111508824B
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- 238000004140 cleaning Methods 0.000 title claims abstract description 59
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 136
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 136
- 239000010703 silicon Substances 0.000 claims abstract description 136
- 239000011259 mixed solution Substances 0.000 claims abstract description 67
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 60
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 46
- 238000005406 washing Methods 0.000 claims abstract description 41
- 239000003513 alkali Substances 0.000 claims abstract description 40
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 32
- 230000001590 oxidative effect Effects 0.000 claims abstract description 20
- 239000002253 acid Substances 0.000 claims abstract description 15
- 239000000243 solution Substances 0.000 claims abstract description 13
- 239000003344 environmental pollutant Substances 0.000 claims abstract description 7
- 231100000719 pollutant Toxicity 0.000 claims abstract description 7
- 238000007781 pre-processing Methods 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 86
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 57
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 40
- 230000035484 reaction time Effects 0.000 claims description 27
- 239000008367 deionised water Substances 0.000 claims description 19
- 229910021641 deionized water Inorganic materials 0.000 claims description 19
- 239000012670 alkaline solution Substances 0.000 claims 2
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 11
- 239000007788 liquid Substances 0.000 description 11
- 239000003814 drug Substances 0.000 description 8
- 229910021645 metal ion Inorganic materials 0.000 description 7
- 239000012752 auxiliary agent Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000002035 prolonged effect Effects 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 208000005156 Dehydration Diseases 0.000 description 1
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- 238000010668 complexation reaction Methods 0.000 description 1
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- 238000005260 corrosion Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims (9)
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Application Number | Priority Date | Filing Date | Title |
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CN2019111433127 | 2019-11-20 | ||
CN201911143312.7A CN110828299A (zh) | 2019-11-20 | 2019-11-20 | 一种制绒清洗方法及异质结电池 |
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CN111508824A CN111508824A (zh) | 2020-08-07 |
CN111508824B true CN111508824B (zh) | 2023-11-14 |
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CN201911143312.7A Pending CN110828299A (zh) | 2019-11-20 | 2019-11-20 | 一种制绒清洗方法及异质结电池 |
CN202010552112.3A Active CN111508824B (zh) | 2019-11-20 | 2020-06-17 | 一种制绒清洗方法及异质结电池 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111446331A (zh) * | 2020-04-09 | 2020-07-24 | 浙江晶科能源有限公司 | 一种去绕镀方法及钝化接触太阳能电池制备方法 |
CN111554774A (zh) * | 2020-04-24 | 2020-08-18 | 中威新能源(成都)有限公司 | 一种硅片制绒后处理方法 |
CN111403561A (zh) * | 2020-04-24 | 2020-07-10 | 中威新能源(成都)有限公司 | 一种硅片制绒方法 |
CN113270519A (zh) * | 2021-04-20 | 2021-08-17 | 山西潞安太阳能科技有限责任公司 | 一种p型硅片制绒方法 |
CN114392966B (zh) * | 2021-12-29 | 2024-04-19 | 江苏时代华宜电子科技有限公司 | 钼合金基片自动清洗设备及清洗方法 |
CN115332371A (zh) * | 2022-07-27 | 2022-11-11 | 西安隆基乐叶光伏科技有限公司 | 硅片的制绒方法及太阳能电池的制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106012027A (zh) * | 2016-07-05 | 2016-10-12 | 常州大学 | 一种单多晶硅链式酸碱一体制绒及其制备方法 |
CN107658367A (zh) * | 2016-07-26 | 2018-02-02 | 福建金石能源有限公司 | 一种异质结电池的湿化学处理方法 |
CN110165018A (zh) * | 2019-04-18 | 2019-08-23 | 横店集团东磁股份有限公司 | 一种下降漏电提升效率的多晶清洗工艺 |
CN110459647A (zh) * | 2019-08-09 | 2019-11-15 | 江苏日托光伏科技股份有限公司 | 一种改善大尺寸硅片制绒均匀性的方法和装置 |
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2019
- 2019-11-20 CN CN201911143312.7A patent/CN110828299A/zh active Pending
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2020
- 2020-06-17 CN CN202010552112.3A patent/CN111508824B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106012027A (zh) * | 2016-07-05 | 2016-10-12 | 常州大学 | 一种单多晶硅链式酸碱一体制绒及其制备方法 |
CN107658367A (zh) * | 2016-07-26 | 2018-02-02 | 福建金石能源有限公司 | 一种异质结电池的湿化学处理方法 |
CN110165018A (zh) * | 2019-04-18 | 2019-08-23 | 横店集团东磁股份有限公司 | 一种下降漏电提升效率的多晶清洗工艺 |
CN110459647A (zh) * | 2019-08-09 | 2019-11-15 | 江苏日托光伏科技股份有限公司 | 一种改善大尺寸硅片制绒均匀性的方法和装置 |
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CN111508824A (zh) | 2020-08-07 |
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Effective date of registration: 20231229 Address after: 213133 No.9, Baotashan Road, electromechanical Industrial Park, Xinbei District, Changzhou City, Jiangsu Province Patentee after: CHANGZHOU S.C EXACT EQUIPMENT Co.,Ltd. Patentee after: TONGWEI SOLAR (CHENGDU) Co.,Ltd. Address before: 213133 No.9, Baotashan Road, electromechanical Industrial Park, Xinbei District, Changzhou City, Jiangsu Province Patentee before: CHANGZHOU S.C EXACT EQUIPMENT Co.,Ltd. Patentee before: Zhongwei New Energy (Chengdu) Co.,Ltd. |
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