CN113270519A - 一种p型硅片制绒方法 - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 24
- 239000010703 silicon Substances 0.000 title claims abstract description 24
- 238000004140 cleaning Methods 0.000 claims abstract description 49
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000002253 acid Substances 0.000 claims abstract description 10
- 230000004048 modification Effects 0.000 claims abstract description 9
- 238000012986 modification Methods 0.000 claims abstract description 9
- 238000001035 drying Methods 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims description 9
- 239000007864 aqueous solution Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 3
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 14
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 10
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 7
- 238000005406 washing Methods 0.000 description 5
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 4
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 4
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 description 2
- 235000019982 sodium hexametaphosphate Nutrition 0.000 description 2
- 230000001502 supplementing effect Effects 0.000 description 2
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
本发明涉及太阳能电池生产领域。一种P型硅片制绒方法，第一次制绒前顺序进行预清洗和第一次纯水清洗，第一制绒后顺序进行第二次纯水清洗、绒面修饰、酸洗、第三次纯水清洗、慢提拉、烘干，绒面修饰是指使用质量百分浓度为5%双氧水清洗1‑2分钟然后再次进行第二次制绒，再次使用质量百分浓度为5%双氧水清洗1‑2分钟然后再次进行第三次制绒、再次使用质量百分浓度为5%双氧水清洗1‑2分钟。粗糙的金字塔表面提高了氮化硅薄膜沉积的均匀性，在现有规模化生产的基础上达到提升转化效率的目的。
Description
技术领域
本发明涉及太阳能电池生产领域。
背景技术
太阳能电池制造产业，PERC技术路线日趋成熟，制绒后的绒面结构对于效率转化至关重要。常规PERC制绒工艺路线为：预清洗→水洗→制绒→臭氧清洗→酸洗→水洗→慢提拉→烘干；预清洗主要去除硅片切割过程中产生的脏污，臭氧清洗去除硅片制绒过程中产生的副反应物和添加剂残留 ，酸洗去除硅片表面的金属离子和二氧化硅层。此工艺制程后的绒面结构，金字塔塔顶和塔底较为尖锐，金字塔表面较为平滑，塔尖氮化硅薄膜沉积受到限制，塔底产生团簇效果，平滑的金字塔表面导致薄膜厚度不均匀，钝化效果变差。
发明内容
本发明所要解决的技术问题是：如何对绒面结构进行优化，提升完成后的钝化效果。
本发明所采用的技术方案是：一种P型硅片制绒方法，第一次制绒前顺序进行预清洗和第一次纯水清洗，第一制绒后顺序进行第二次纯水清洗、绒面修饰、酸洗、第三次纯水清洗、慢提拉、烘干，绒面修饰是指使用质量百分浓度为5%双氧水清洗1-2分钟然后再次进行第二次制绒，再次使用质量百分浓度为5%双氧水清洗1-2分钟然后再次进行第三次制绒、再次使用质量百分浓度为5%双氧水清洗1-2分钟。
预清洗采用体积浓度5%-10%HF水溶液进行清洗1-2分钟。
酸洗采用体积浓度5%-10%HF水溶液进行清洗1-2分钟。
绒面修饰，修饰液体为双氧水、HF酸水溶液，其中双氧水质量百分比浓度为5-6%，HF体积浓度15%-20%HF，处理时间1-3分钟。
本发明的有益效果是：粗糙的金字塔表面提高了氮化硅薄膜沉积的均匀性，在现有规模化生产的基础上，不改变设备结构（减少设备升级成本）进行绒面结构的优化，达到提升转化效率的目的。
具体实施方式
上料：166cm×166cm硅片拆包，通过自动化上料机插入载具花篮中；
预清洗：自动化设备将花篮放入预清洗槽，进行硅片表面脏污清洗，体积浓度5%-10%HF水溶液进行清洗；
纯水清洗：预清洗后进行纯水清洗，去除硅片表面残留化学品；
制绒：纯水清洗后进行硅片表面制绒，腐蚀形成均匀的金字塔结构，刻蚀液采用KOH、六偏磷酸钠、水混合溶液，其中，KOH的质量百分比浓度为6%，六偏磷酸钠的质量百分浓度为3.4%；
纯水清洗：制绒后进行纯水清洗，去除硅片表面药液残留；
绒面修饰：纯水清洗后，进行臭氧清洗，去除硅片表面副反应物和添加剂残留；臭氧清洗的同时进行绒面结构的优化处理，主要过程为臭氧水氧化金字塔表面→HF和氧化层发生反应，腐蚀金字表面，如此往复循环，塔尖和塔底逐渐圆化，微小嵌套的小金字塔结构逐渐消失；
酸洗：HF去除硅片表面氧化层，达到疏水状态；Hcl去除硅片表面金属离子；
水洗：去除硅片表面药液残留；
慢提拉：70℃纯水二次清洗，使硅片表面PH值呈中性；增加硅片表面温度，利于烘干；
烘干：90℃烘干，使硅片表面干燥，无纯水和水汽残留。
设备端：常规PERC制绒工序臭氧清洗槽增加HF初始配液管路和过程补液所用的管路和恒压罐；
工艺制程端：常规PERC制绒工序臭氧清洗槽工艺配方变更，初始配液增加30L氢氟酸，过程补液100ml/批次；工艺时间由120s增加到600s。
对照组为不采用氢氟酸，其它工艺条件相同。
Claims (4)
1.一种P型硅片制绒方法，其特征在于：第一次制绒前顺序进行预清洗和第一次纯水清洗，第一制绒后顺序进行第二次纯水清洗、绒面修饰、酸洗、第三次纯水清洗、慢提拉、烘干，绒面修饰是指使用质量百分浓度为5%双氧水清洗1-2分钟然后再次进行第二次制绒，再次使用质量百分浓度为5%双氧水清洗1-2分钟然后再次进行第三次制绒、再次使用质量百分浓度为5%双氧水清洗1-2分钟。
2.根据权利要求1所述的一种P型硅片制绒方法，其特征在于：预清洗采用体积浓度5%-10%HF水溶液进行清洗1-2分钟。
3.根据权利要求1所述的一种P型硅片制绒方法，其特征在于：酸洗采用体积浓度5%-10%HF水溶液进行清洗1-2分钟。
4.根据权利要求1所述的一种P型硅片制绒方法，其特征在于：绒面修饰，修饰液体为双氧水、HF酸水溶液，其中双氧水质量百分比浓度为5-6%，HF体积浓度15%-20%HF，处理时间1-3分钟。
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114392966A (zh) * | 2021-12-29 | 2022-04-26 | 江苏时代华宜电子科技有限公司 | 钼合金基片自动清洗设备及清洗方法 |
| CN114812121A (zh) * | 2022-04-15 | 2022-07-29 | 通威太阳能（安徽）有限公司 | 硅片烘干装置及烘干方法、制绒硅片后处理系统及方法 |
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| CN114392966A (zh) * | 2021-12-29 | 2022-04-26 | 江苏时代华宜电子科技有限公司 | 钼合金基片自动清洗设备及清洗方法 |
| CN114392966B (zh) * | 2021-12-29 | 2024-04-19 | 江苏时代华宜电子科技有限公司 | 钼合金基片自动清洗设备及清洗方法 |
| CN114812121A (zh) * | 2022-04-15 | 2022-07-29 | 通威太阳能（安徽）有限公司 | 硅片烘干装置及烘干方法、制绒硅片后处理系统及方法 |
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