CN111492489B - 半导体发光元件的自组装装置及方法 - Google Patents

半导体发光元件的自组装装置及方法 Download PDF

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Publication number
CN111492489B
CN111492489B CN201880082488.3A CN201880082488A CN111492489B CN 111492489 B CN111492489 B CN 111492489B CN 201880082488 A CN201880082488 A CN 201880082488A CN 111492489 B CN111492489 B CN 111492489B
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light emitting
semiconductor light
substrate
assembly
emitting element
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CN111492489A (zh
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沈奉柱
金道熙
朴昶绪
赵贤佑
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LG Electronics Inc
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LG Electronics Inc
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Priority claimed from PCT/KR2018/011438 external-priority patent/WO2019203403A1/ko
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Abstract

本发明涉及半导体发光元件的自组装装置及方法，尤其，本发明的显示装置的制造方法包括：形成具备磁性体的多个半导体发光元件的步骤；将基板移送到组装位置，并且将多个所述半导体发光元件投入到流体腔室的步骤；向多个所述半导体发光元件施加磁力，使得多个所述半导体发光元件在所述流体腔室内沿着一个方向进行移动的步骤；以及通过施加电场来将多个所述半导体发光元件引导至所述预设位置，使得多个所述半导体发光元件在移动的过程中安置于所述基板的预设位置的步骤。

Description

半导体发光元件的自组装装置及方法
技术领域
本发明涉及显示装置的制造方法，尤其，涉及一种半导体发光元件的自组装方法和装置。
背景技术
近年来，液晶显示器(LCD)、有机发光元件(OLED)显示器以及微LED显示器等一直争相在显示技术领域实现大面积显示器。
然而，在LCD的情况下，存在响应时间不快和由背光源生成的光的效率低等问题，在OLED的情况下，存在寿命短、批量产量低且效率低的缺点。
另一方面，当在显示器使用具有100微米以下的直径或截面面积的半导体发光元件(微LED(uLED))时，由于显示器不使用偏光板等吸收光，因此可能提供非常高的效率。然而，大型显示器中需要数百万个半导体发光元件，因此与其他技术相比，具有难以转印元件的缺点。
当前正在开发的用于转印工艺的技术包括拾取和放置(pick&place)、激光剥离法(Laser Lift-off,LLO)或自组装等。其中，自组装方法是半导体发光元件自发在流体中寻找位置的方法，其是实现大屏幕显示装置的最有利的方法。
近年来，美国登记专利第9，825，202中公开了适用于自组装的微LED结构，但是尚未进行关于通过微LED的自组装来制造显示器的技术的研究。由此，本发明提出了一种微LED可以被自组装的新型的制造方法和制造装置。
发明内容
发明所要解决的问题
本发明的一目的在于，提供一种在使用具有微米尺寸的半导体发光元件的大屏幕显示器中具有高可靠性的新的制造工艺。
本发明的另一目的在于，提供一种制造工艺，该制造工艺在将半导体发光元件组装到临时基板或配线基板时能够提高转印精密度。
解决问题的技术方案
本发明的显示装置的制造方法具有半导体发光元件的自组装方法，在半导体发光元件的自组装方法中，在利用磁场使半导体发光元件沿着一个方向进行移动的期间，利用电场将半导体发光元件安置到组装位置。
更具体而言，所述半导体发光元件的自组装方法包括：形成具备磁性体的多个半导体发光元件的步骤；将基板移送到组装位置，并且将多个所述半导体发光元件投入到流体腔室的步骤；向多个所述半导体发光元件施加磁力，使得多个所述半导体发光元件在所述流体腔室内沿着一个方向进行移动的步骤；以及通过施加电场来将多个所述半导体发光元件引导至所述预设位置，使得多个所述半导体发光元件在移动的过程中安置于所述基板的预设位置的步骤。
在实施例中，所述基板的组装位置可以是，所述基板以其用于组装多个所述半导体发光元件的组装面朝向下方的方式配置于所述流体腔室的位置。
在实施例中，多个所述半导体发光元件可以通过所述磁力来从与所述基板隔开的位置沿着与所述基板呈水平的方向进行移动。在多个所述半导体发光元件沿着与所述基板呈水平的方向进行移动的期间，可以通过所述电场朝向与所述基板垂直的方向进行移动，从而安置于所述基板的预设位置。
在实施例中，所述半导体发光元件的自组装方法可以包括：在将多个所述半导体发光元件引导至所述预设位置之后，通过将所述磁体朝向远离所述基板的方向进行移动，来使残留在所述流体腔室内的半导体发光元件掉落到所述流体腔室的底部的步骤。
并且，本发明公开一种制造装置，其能够通过组合磁场和电场来实现半导体发光元件的自组装的上述制造工艺。
具体而言，所述制造装置是半导体发光元件的自组装装置，其包括：流体腔室，其设置有用于容纳具备磁性体的多个半导体发光元件的空间；移送部，其用于将基板移送到组装位置；磁体，其与所述流体腔室隔开配置，用于向所述半导体发光元件施加磁力；以及位置控制部，其与所述磁体相连接，并形成为对所述磁体的位置进行控制，所述基板构成为形成电场，使得多个所述半导体发光元件在因所述磁体的位置变化而进行移动的过程中安置于所述基板的预设位置。
在实施例中，所述基板以其用于组装所述半导体发光元件的组装面朝向下方的方式配置于所述流体腔室。其特征在于，所述基板的组装面沉浸于所述流体腔室内的流体，所述磁体可以配置成面向与所述基板的组装面相反的表面。
在实施例中，所述磁体可以沿着与所述基板呈水平的方向、顺时针方向或逆时针方向进行旋转。
在实施例中，所述基板包括：基底部；多个单元，其由从所述基底部凸出的分隔壁而沿着一个方向依次配置；以及多个电极，其配置于多个所述单元的下侧。
所述基板可以包括介电层，所述介电层在向多个所述电极施加电源时覆盖多个所述电极，以在多个所述单元中形成所述电场，并且所述介电层形成所述单元的底部。所述自组装装置可以包括电源供应部，其与多个所述电极电连接，以向多个所述电极施加电源而产生所述电场。
在实施例中，在所述流体腔室形成具有透光性的底板，多个所述半导体发光元件配置在所述底板和所述基板之间。所述自组装装置包括图像传感器，其被配置成面向所述底板，以经由所述底板对所述流体腔室内进行监控。
发明效果
根据如上所述的构成的本发明，在用微发光二极管形成单个像素的显示装置中，可以一次性地组装大量的半导体发光元件。
如上所述，根据本发明，能够使大量的半导体发光元件在小尺寸的晶片上进行像素化，之后将其转印到大面积的基板。据此，能够以低廉的费用制造大面积的显示装置。
并且，根据本发明的制造方法和装置，利用溶液中的磁场和电场来同时多次地将半导体发光元件转印到准确位置，从而与部件的尺寸或数量、转印面积无关地能够实现低成本、高效率、高速转印。
此外，由于通过电场进行组装，因此能够通过选择性地施加电来进行选择性组装，而无需额外的附加装置或工艺。并且，通过将组装基板配置于腔室的上侧来能够使基板的装载和卸载变得容易，并且能够防止半导体发光元件的非特异性结合。
并且，根据本发明的制造方法和装置，可以通过设置多个用于组装的磁体来降低每个磁体扫描的区域，由此能够以大面积进行高速转印。此外，在组装后，也可以利用磁体回收残留在流体腔室内的半导体发光元件，从而重新使用。
附图说明
图1是示出本发明的使用半导体发光元件的显示装置的一实施例的概念图。
图2是图1的显示装置的A部分的部分放大图。
图3是图2的半导体发光元件的放大图。
图4是示出图2的半导体发光元件的另一实施例的放大图。
图5a至图5e是用于说明制造前述的半导体发光元件的新工艺的概念图。
图6是示出本发明的半导体发光元件的自组装装置的一例的概念图。
图7是图6的自组装装置的框图。
图8a至图8e是示出利用图6的自组装装置来将半导体发光元件进行自组装的工艺的概念图。
图9是用于说明图8a至图8e的半导体发光元件的概念图。
具体实施方式
下面，将参照附图详细描述本说明书中公开的实施例，无论附图符号如何，相同或相似的构成要素赋予相同的附图标记，并且将省略对此的重复描述。以下描述中使用的构成要素的后缀“模块”和“部”仅出于考虑说明书的容易撰写而赋予或混用，它们本身并不具有彼此区分的含义或作用。并且，在描述本说明书中公开的实施例时，如果判断对相关的公知技术的具体描述可能会混淆本说明书中公开的实施例的主旨，则省略其详细描述。并且，应当理解，附图仅是用于使本说明书中公开的实施例容易理解，本说明书中公开的技术思想并不受附图限制。
并且，当提及诸如层、区域或基板的要素存在于另一构成要素“上(on)”时，应理解为其可以直接存在于另一要素上，或者它们之间还可以存在中间要素。
本说明书中所描述的显示装置可以包括手机、智能电话(smart phone)、笔记本电脑(laptop computer)、数字广播终端、个人数字助理(PDA：personal digitalassistants)、便携式多媒体播放器(PMP：portable multimediaplayer)、导航仪、触屏平板PC(Slate PC)、平板PC(Tablet PC)、超级本(Ultra Book)、数字TV、数字标牌、头戴式显示器(HMD)、台式计算机等。然而，本技术领域所属技术人员将容易理解，即使是后续开发的新产品形式，本说明书中记载的实施例的构成也可以适用于能够显示的装置。
图1是示出本发明的使用半导体发光元件的显示装置的一实施例的概念图，图2是图1的显示装置的A部分的部分放大图，图3是图2的半导体发光元件的放大图，图4是示出图2的半导体发光元件的另一实施例的放大图。
根据附图，显示装置100的控制部中被处理的信息可以输出于显示模块140。围绕所述显示模块140的边缘的闭环形式的壳体101可以形成所述显示装置100的边框(bezel)。
所述显示模块140包括用于显示图像的面板141，所述面板141可以包括：微米尺寸的半导体发光元件150；和用于安装所述半导体发光元件150的配线基板110。
在所述配线基板110可以形成有配线，由此能够与所述半导体发光元件150的n型电极152和p型电极156连接。据此，所述半导体发光元件150是自主发光的单个像素，可以设置在所述配线基板110上。
显示于所述面板141的图像是视觉信息，通过所述配线独立地进行控制，由此以矩阵形式配置的单位像素(sub-pixel)实现发光。
在本发明中，作为用于使电流转换为光的半导体发光元件150的一个种类示出了微LED(Light Emitting Diode)。所述微LED可以是，形成为具有100微米以下的小尺寸的发光二极管。所述半导体发光元件150在发光区域分别设置有蓝色、红色以及绿色，从而可以通过这些组合来实现单位像素。即，所述单位像素是指用于实现一种颜色的最小单位，在所述单位像素内可以设置有至少三个微LED。
更具体而言，参照图3，所述半导体发光元件150可以是垂直型结构。
例如，所述半导体发光元件150可以由高输出发光元件实现，所述高输出发光元件通过以氮化镓(GaN)为主并将铟(In)和/或铝(Al)一并添加来发出包括蓝色在内的各种光。
这种垂直型半导体发光元件包括：p型电极156；形成在p型电极156上的p型半导体层155；形成在p型半导体层155上的活性层154；形成在活性层154上的n型半导体层153；以及形成在n型半导体层153上的n型电极152。在该情况下，位于下部的p型电极156可以与配线基板的p电极电连接，位于上部的n型电极152可以在半导体发光元件的上侧与n电极电连接。这种垂直型半导体发光元件150可以将电极上/下配置，因此具有能够降低芯片尺寸的较大优点。
作为另一例，参照图4，所述半导体发光元件可以是倒装芯片型(flip chip type)的发光元件。
作为这种例子，所述半导体发光元件250包括：p型电极256；形成有p型电极256的p型半导体层255；形成在p型半导体层255上的活性层254；形成在活性层254上的n型半导体层253；以及在n型半导体层253上与p型电极256沿水平方向隔开配置的n型电极252。在该情况下，p型电极256和n型电极152均可以在半导体发光元件的下部与配线基板的p电极和n电极电连接。
所述垂直型半导体发光元件和水平型半导体发光元件可以分别是，绿色半导体发光元件、蓝色半导体发光元件或红色半导体发光元件。在绿色半导体发光元件和蓝色半导体发光元件的情况下，可以以高输出发光元件实现，所述高输出发光元件通过以氮化镓(GaN)为主并将铟(In)和/或铝(Al)一并添加来发出绿色或蓝色的光。作为这种例子，所述半导体发光元件可以是由n-Gan、p-Gan、AlGaN、InGan等各种层形成的氮化镓薄膜，具体而言，所述p型半导体层可以是P-type GaN，所述n型半导体层可以是N-type GaN。然而，在红色半导体发光元件的情况下，所述p型半导体层可以是P-type GaAs，所述n型半导体层可以是N-type GaAs。
并且，可以是如下所述的情况：所述p型半导体层的p电极侧是掺杂有Mg的P-typeGaN，n型半导体层的n电极侧是掺杂有Si的N-type GaN。在该情况下，前述的半导体发光元件可以是不具有活性层的半导体发光元件。
另外，参照图1至图4，由于所述发光二极管非常小，因此所述显示面板可以由自主发光的单位像素以规定间距排列，由此可以实现高画质的显示装置。
在以上描述的本发明的利用半导体发光元件的显示装置中，将在晶片上生长并通过台面和隔离来形成的半导体发光元件用作单个像素。在该情况下，具有微米尺寸的半导体发光元件150需要被转印到所述显示面板的基板上的预设位置的晶片。作为这种转印技术可以利用拾取和放置(pick and place)，但是成功率低且需要很长时间。作为另一例，有着利用印模(stamp)或辊(roll)来一次性地转印多个元件的技术，但是生产率受限，由此不适用于大屏幕的显示器。本发明中提出一种能够解决这种问题的显示装置的新的制造方法和制造装置。
为此，下面，将首先对显示装置的新的制造方法进行描述。图5a至图5e是用于说明制造前述的半导体发光元件的新工艺的概念图。
在本说明书中，示出了使用了无源矩阵(Passive Matrix,PM)方式的半导体发光元件的显示装置。然而，以下描述的示例也可以适用于有源矩阵(Active Matrix,AM)方式的半导体发光元件。并且，示出了将水平型半导体发光元件进行自组装的方法，但是，这也适用于将垂直型半导体发光元件进行自组装的方法。
首先，根据制造方法，在生长基板159分别生长第一导电型半导体层153、活性层154、第二导电型半导体层155(图5a)。
若生长第一导电型半导体层153，则接着使活性层154在所述第一导电型半导体层153上生长，然后，使第二导电型半导体层155在所述活性层154上生长。如上所述，若使第一导电型半导体层153、活性层154以及第二导电型半导体层155依次生长，则如图5a所示，第一导电型半导体层153、活性层154以及第二导电型半导体层155形成层叠结构。
在该情况下，所述第一导电型半导体层153可以是p型半导体层，所述第二导电型半导体层155可以是n型半导体层。然而，本发明并不一定限于此，第一导电型可以是n型，第二导电型可以是p型。
并且，在本实施例中示出了存在有所述活性层的情况，但是如上所述，根据不同情况，还可以是不存在所述活性层的结构。作为这种例子，可以是如下所述的情况：所述p型半导体层是掺杂有Mg的P-type GaN，n型半导体层的n电极侧是掺杂有Si的N-type GaN。
生长基板159(晶片)可以由具有透光性质的材料形成，例如，蓝宝石(Al2O3)、GaN、ZnO、AlO中的任意一种，但并不限于此。并且，生长基板159可以由载体晶片形成，所述载体晶片是适合于半导体物质生长的物质。可以由导热性优异的物质形成，包括传导性基板或绝缘性基板，例如，可以使用导热性高于蓝宝石(Al2O3)基板的SiC基板或Si、GaAs、GaP、InP以及Ga2O3中的至少一种。
接着，通过去除第一导电型半导体层153、活性层154以及第二导电型半导体层155的至少一部分，来形成多个半导体发光元件(图5b)。
更具体而言，执行隔离(isolation)，使得多个发光元件形成发光元件阵列。即，在垂直方向上对第一导电型半导体层153、活性层154以及第二导电型半导体层155进行蚀刻，由此形成多个半导体发光元件。
如果在该步骤中形成水平型半导体发光元件，则可以在垂直方向上去除所述活性层154和第二导电型半导体层155的一部分，由此执行用于将所述第一导电型半导体层153露出到外部的台面工艺、以及之后通过蚀刻第一导电型半导体层来形成多个半导体发光元件阵列的隔离(isolation)。
接着，在所述第二导电型半导体层155的一表面上分别形成第二导电型电极156(或p型电极)(图5c)。所述第二导电型电极156可以通过溅射等沉积方法来形成，但是，本发明并不一定限于此。然而，在所述第一导电型半导体层和第二导电型半导体层分别为n型半导体层和p型半导体层的情况下，所述第二导电型电极156还可以为n型电极。
然后，通过去除所述生长基板159来形成多个半导体发光元件。例如，可以利用激光剥离法(Laser Lift-off,LLO)或化学剥离法(Chemical Lift-off,CLO)来去除生长基板159(图5d)。
然后，执行用于将多个半导体发光元件150在填充有流体的腔室安置到基板的步骤(图5e)。
例如，将所述半导体发光元件150和基板放置到填充有流体的腔室内，并且利用流动、重力、表面张力等来使多个所述半导体发光元件自主地组装到所述基板161。
作为另一例，代替所述组装基板161，还可以将配线基板放置在流体腔室内，并直接将所述半导体发光元件150安置到配线基板。在该情况下，所述基板可以是配线基板。然而，为了便于说明，本发明示出了将基板设置成组装基板161，并且将半导体发光元件150安置于所述组装基板161的示例。
在所述组装基板161可以设置有用于使多个所述半导体发光元件150插入的多个单元(未图示)，使得半导体发光元件150容易安置于组装基板161。具体而言，在所述组装基板161的、所述半导体发光元件150与配线电极对准(aligned)的位置上形成有多个单元(cell)，所述半导体发光元件150安置于所述单元。多个所述半导体发光元件150在所述流体内移动的同时被组装到多个所述单元。
将多个半导体发光元件排列到所述组装基板161之后，若将所述组装基板161的多个半导体发光元件转印到配线基板，则可以进行大面积的转印。因此，所述组装基板161可以被称为临时基板。
另外，如果想要将以上描述的自组装方法应用于大屏幕显示器的制造，则需要增加转印产量。本发明提出了一种为了增加转印产量而使重力或摩擦力的影响最小化并防止非特异性结合的方法和装置。如果想要将以上描述的自组装方法应用于大屏幕显示器的制造中，则需要提高转印率。为了提高转印产量，本发明提出了一种使重力或摩擦力的影响最小化，并且防止非特异性结合的方法和装置
在该情况下，在本发明的显示装置中，在半导体发光元件配置磁性体，并利用磁力使半导体发光元件进行移动，并且在移动过程中利用电场将所述半导体发光元件安置到预设位置。下面，将参照附图进一步对这种转印方法和装置进行详细描述。
图6是示出本发明的半导体发光元件的自组装装置的一例的概念图，图7是图6的自组装装置的框图。并且，图8a至图8e是示出利用图6的自组装装置来将半导体发光元件进行自组装的工艺的概念图，图9是用于说明图8a至图8e的半导体发光元件的概念图。
如图6和图7所示，本发明的自组装装置160可以包括流体腔室162、磁体163以及位置控制部164。
所述流体腔室162具有用于容纳多个半导体发光元件的空间。在所述空间中可以填充有流体，所述流体可以包括水等作为组装溶液。因此，所述流体腔室162可以是水箱，并且可以构成为开放型。然而，本发明不限于此，所述流体腔室162可以是所述空间形成为封闭空间的封闭型。
基板161在所述流体腔室162可以配置成用于组装所述半导体发光元件150的组装面朝向下方。例如，所述基板161通过移送部被移送到组装位置，所述移送部可以包括用于安装基板的平台(stage)165。所述平台165通过控制部可进行位置调节，由此，所述基板161可以被移送到所述组装位置
此时，所述基板161的组装面在所述组装位置上朝向所述流体腔室162的底部。根据图示，所述基板161的组装面被配置成浸入到所述流体腔室162内的流体。因此，所述半导体发光元件150在所述流体内朝向所述组装面进行移动。
所述基板161作为能够形成电场的组装基板，其可以包括基底部161a、介电层161b以及多个电极161c。
所述基底部161a可以由具有绝缘性的材料制成，多个所述电极161c可以是在所述基底部161a的一表面图案化了的薄膜或厚膜双平面(bi-planar)电极。例如，所述电极161c可以由Ti/Cu/Ti的层叠、Ag膏(paste)以及ITO等形成。
所述介电层161b可以由SiO2、SiNx、SiON、Al2O3、TiO2、HfO2等的无机物质构成。与此不同地，介电层161b作为有机绝缘体，可以由单层或多层构成。介电层161b的厚度可以形成为几十nm～几μm的厚度
此外，本发明的基板161包括被分隔壁分隔的多个单元161d。单元161d可以沿着一个方向依次配置，所述单元161d可以由聚合物(polymer)材料制成。并且，用于构成多个单元161d的分隔壁161e形成为与相邻的单元161d共享。所述分隔壁161e从所述基底部161a凸出，多个所述单元161d可以因所述分隔壁161e而沿着一个方向依次配置。更具体而言，多个所述单元161d可以在列和行方向上分别依次配置，并且可以具有矩阵结构。
如图所示，单元161d的内部具有用于容纳半导体发光元件150的槽，所述槽可以是被所述分隔壁161e限定出的空间。所述槽的形状可以与半导体发光元件的形状相同或相似。例如，在半导体发光元件是四边形形状的情况下，槽可以是四边形形状。并且，虽然未图示，在半导体发光元件为圆形的情况下，形成于多个单元内部的槽可以构成为圆形。此外，多个单元中的每一个构成为容纳单个的半导体发光元件。即，在一个单元中容纳一个半导体发光元件。
另外，多个电极161c具备配置于多个单元161d每一个的底部的多个电极线，多个所述电极线可以构成为延伸到相邻的单元。
所述多个电极161c配置于所述多个单元161d的下侧，将不同的极性分别施加到所述多个电极161c，由此在所述多个单元161d内产生电场。为了形成所述电场，所述介电层161b可以覆盖所述多个电极161c，并且所述介电层161b可以形成所述多个单元161d的底部。在这种结构中，若从多个单元161d每一个的下侧向一对电极161c施加不同的极性，则形成电场，所述半导体发光元件可以通过所述电场插入到所述多个单元161d的内部。
在所述组装位置上，所述基板161的多个电极与电源供应部171电连接。所述电源供应部171向多个所述电极施加电源，从而执行产生所述电场的功能。
所述自组装装置可以包括磁体163，所述磁体163用于向所述半导体发光元件施加磁力。所述磁体163与所述流体腔室162隔开配置，并且向所述半导体发光元件150施加磁力。所述磁体163可以被配置为面向与所述基板161的组装面相反的面，通过与所述磁体163连接的位置控制部164来控制所述磁体的位置。
所述半导体发光元件1050可以具备磁性体，使得所述半导体发光元件1050通过所述磁体163的磁场在所述流体内进行移动。
参照图9，具备磁性体的半导体发光元件1050可以包括：第一导电型电极1052；第二导电型电极1056；第一导电型半导体层1053，其用于配置所述第一导电型电极1052；第二导电型半导体层1055，其与所述第一导电型半导体层1053重叠，并且用于配置所述第二导电型电极1056；以及活性层1054，其配置在所述第一导电型半导体层1053和第二导电型半导体层1055之间。
在此，第一导电型可以是p型，第二导电型可以是n型，还可以以相反的方式构成。并且，如前所述，可以是没有所述活性层的半导体发光元件。
另外，在本发明中，所述第一导电型电极1052可以在通过半导体发光元件的自组装等来将半导体发光元件组装到配线基板之后形成。并且，在本发明中，所述第二导电型电极1056可以包括所述磁性体。磁性体可以是指具有磁性的金属。所述磁性体可以是Ni、SmCo等，作为另一例，可以包含与Gd系、La系以及Mn系中的至少一种相对应的物质。
磁性体可以以粒子形式设置于所述第二导电型电极1056。并且，与此不同地，在包括磁性体的导电型电极中，导电型电极的一层可以由磁性体构成。作为这种例子，如图9所示，半导体发光元件1050的第二导电型电极1056可以包括第一层1056a和第二层1056b。在此，第一层1056a可以构成为包括磁性体，第二层1056b可以包括非磁性体得金属材料。
如图所示，在本示例中，包括磁性体的第一层1056a可以被配置成与第二导电型半导体层1055相接。在该情况下，第一层1056a配置在第二层1056b和第二导电型半导体层1055之间。所述第二层1056b可以是与配线基板的第二电极相连接的接触金属。然而，本发明并不一定限于此，所述磁性体可以配置在所述第一导电型半导体层的一表面。
再次图6和图7，更具体而言，所述自组装装置可以包括磁体处理器(magnethandler)或马达，所述磁体处理器可以在所述流体腔室的上部沿着x、y、z轴自动或手动的方式进行移动，所述马达能够使所述磁体163进行旋转。所述磁体处理器和马达可以构成所述位置控制部164。由此，所述磁体163沿着相对于所述基板261水平的方向、顺时针方向或逆时针方向进行旋转。
另外，所述流体腔室162可以形成具有透光性的底板166，多个所述半导体发光元件可以被配置在所述底板166和所述基板261之间。图像传感器167可以被配置成面向所述底板166，以经由所述底板166对所述流体腔室162的内部进行监控。所述图像传感器167被控制部172控制，并且可以包括倒置型(inverted type)透镜和CCD(电荷耦合器件)等，以能够观察基板261的组装面。
以上描述的自组装装置构成为将磁场和电场组合利用，当利用这些磁场和电场时，在多个所述半导体发光元件因所述磁体的位置变化而进行移动的过程中，通过电场可以将所述半导体发光元件安置到所述基板的预设位置。下面，将进一步对使用以上描述的自组装装置的组装过程进行详细描述。
首先，通过在图5a至图5c中描述的过程，形成具有磁性体的多个半导体发光元件1050。在该情况下，在形成图5c中的第二导电型电极的过程中，可以将磁性体沉积到所述半导体发光元件。
接着，将基板161移送到组装位置，将所述半导体发光元件1050投入到流体腔室162(图8a)。
如前所述，所述基板161的组装位置可以是，将所述基板161以所述基板161的用于组装所述半导体发光元件1050的组装面朝向下方的方式配置于所述流体腔室162的位置。
在该情况下，所述半导体发光元件1050中的一部分可以沉到流体腔室162的底部，而一部分可以漂浮在流体中。在具有透光性的底板166设置于所述流体腔室162的情况下，所述半导体发光元件1050中的一部分可以沉到底板166。
接着，向所述半导体发光元件1050施加磁力，使得所述半导体发光元件1050在所述流体腔室162内沿着垂直方向浮起(图8b)。
当所述自组装装置的磁体163从原始位置移动到与所述基板161的组装面相反的面时，所述半导体发光元件1050在所述流体中朝向所述基板161浮起。所述原始位置可以是远离所述流体腔室162的位置。作为另一例，所述磁体163可以由电磁体构成。在该情况下，通过向电磁体供应电力来产生初始磁力。
另外，在本示例中，可以通过调节所述磁力的大小来对所述基板161的组装面和所述半导体发光元件1050之间的隔开距离进行控制。例如，利用所述半导体发光元件1050的重量、浮力以及磁力来控制所述隔开距离。所述隔开距离可以是距所述基板的最外侧边缘的几毫米至几十微米。
接着，向所述半导体发光元件1050施加磁力，使得所述半导体发光元件1050在所述流体腔室162内沿着一个方向进行移动。例如，所述磁体163沿着相对于所述基板呈水平的方向、顺时针方向或逆时针方向(图8c)。在该情况下，在所述磁力的作用下，所述半导体发光元件1050在与所述基板161隔开的位置上沿着与所述基板161呈水平的方向进行移动。
接着，执行通过施加电场来将所述半导体发光元件1050引导至所述预设位置的步骤，使得所述半导体发光元件1050在移动的过程中被安置到所述基板161的预设位置(图8c)。例如，在所述半导体发光元件1050沿着与所述基板161呈水平的方向进行移动的期间，通过所述电场使所述半导体发光元件1050朝向与所述基板161垂直的方向进行移动，由此将其安置到所述基板161的预设位置。
通过向基板161的bi-planar电极供应电源来产生电场，并且利用该电场来进行引导，以仅在预设位置进行组装。即，利用选择性产生的电场来使半导体发光元件1050自主地组装到所述基板161的组装位置。为此，在所述基板161可以设置有用于使所述半导体发光元件1050插入的单元。
然后，执行所述基板161的卸载过程，并且完成组装工艺。在所述基板161为组装基板的情况下，可以通过将以如前所述的方式排列的半导体发光元件转印到配线基板，来执行用于实现显示装置的后续工艺。
另外，在将所述半导体发光元件1050引导至所述预设位置之后，可以将所述磁体163朝向远离所述基板161的方向进行移动，使得残留在所述流体腔室162内的半导体发光元件1050掉落到所述流体腔室162的底部(图8d)。作为另一例，在所述磁体163是电磁体的情况下，如果中断电源供应，则残留在所述流体腔室162内的半导体发光元件1050掉落到所述流体腔室162的底部。
然后，当回收掉落到所述流体腔室162底部的半导体发光元件1050时，可以重复使用所述回收的半导体发光元件1050。
在以上描述的自组装装置和方法中，为了提高流控组件(fluidic assembly)中的组装率，利用磁场将远距离的部件集中到预设的组装位置附近，并且将单独的电场施加到组装位置，从而仅仅在组装位置选择性地组装部件。此时，使组装基板位于水箱上部，并且使组装面朝向下方，由此使因部件的重量而引起的重力影响最小化，并且防止非特异性结合，从而去除不良。即，为了增加转印率，使组装基板位于上部，从而使重力或摩擦力的影响最小化，并且防止非特异性结合。
如上所述，根据具有如上所述的构成的本发明，在用半导体发光元件形成单个像素的显示装置中，可以一次性地组装大量的半导体发光元件。
如上所述，根据本发明，可以将大量的半导体发光元件在较小尺寸的晶片上实现像素化，然后将其转印到大面积基板。由此，能够以低廉的费用制造大面积的显示装置。

Claims (12)

1.一种半导体发光元件的自组装装置，其特征在于，包括：
流体腔室，设置有用于容纳具备磁性体的多个半导体发光元件的空间；
移送部，将基板移送到组装位置；
磁体，与所述流体腔室隔开配置，用于向多个所述半导体发光元件施加磁力；以及
位置控制部，与所述磁体相连接，并形成为控制所述磁体的位置，
所述基板形成电场，使得所述半导体发光元件在因所述磁体的位置变化而进行移动的过程中安置于所述基板的预设位置，
所述基板以其用于组装多个所述半导体发光元件的组装面朝向下方的方式配置于所述流体腔室，
所述基板的组装面沉浸于所述流体腔室内的流体，
所述磁体配置成面向与所述基板的组装面相反的表面。
2.根据权利要求1所述的半导体发光元件的自组装装置，其特征在于，
所述磁体沿着与所述基板呈水平的方向、顺时针方向或逆时针方向进行旋转。
3.根据权利要求1所述的半导体发光元件的自组装装置，其特征在于，
所述基板包括：
基底部；
多个单元，因从所述基底部凸出的分隔壁而沿着一个方向依次配置；以及
多个电极，配置于多个所述单元的下侧。
4.根据权利要求3所述的半导体发光元件的自组装装置，其特征在于，
所述基板还包括介电层，所述介电层形成多个所述单元的底部，所述介电层在向多个所述电极施加电源时覆盖多个所述电极，以在多个所述单元形成所述电场。
5.根据权利要求3所述的半导体发光元件的自组装装置，其特征在于，
还包括电源供应部，所述电源供应部与多个所述电极电连接，以向多个所述电极施加电源而产生所述电场。
6.根据权利要求1所述的半导体发光元件的自组装装置，其特征在于，
在所述流体腔室形成具有透光性的底板，
多个所述半导体发光元件配置在所述底板和所述基板之间。
7.根据权利要求6所述的半导体发光元件的自组装装置，其特征在于，
还包括图像传感器，所述图像传感器配置成面向所述底板，以经由所述底板监控所述流体腔室内部。
8.一种半导体发光元件的自组装方法，其特征在于，包括：
形成具备磁性体的多个半导体发光元件的步骤；
将基板移送到组装位置，并且将多个所述半导体发光元件投入到流体腔室的步骤；
向多个所述半导体发光元件施加磁力，使得多个所述半导体发光元件在所述流体腔室内沿着一个方向进行移动的步骤；以及
通过施加电场来将多个所述半导体发光元件引导至预设位置，使得多个所述半导体发光元件在移动的过程中安置于所述基板的预设位置的步骤，
其中，使所述基板以其用于组装多个所述半导体发光元件的组装面朝向下方的方式配置于所述流体腔室，
使所述基板的组装面沉浸于所述流体腔室内的流体，
并且，使磁体沿着一个方向进行移动，使得所述磁体配置成面向与所述基板的组装面相反的表面。
9.根据权利要求8所述的半导体发光元件的自组装方法，其特征在于，
所述基板的组装位置是所述基板以其用于组装所述半导体发光元件的组装面朝向下方的方式配置于所述流体腔室的位置。
10.根据权利要求8所述的半导体发光元件的自组装方法，其特征在于，
所述半导体发光元件通过所述磁力从与所述基板隔开的位置沿着与所述基板呈水平的方向进行移动。
11.根据权利要求10所述的半导体发光元件的自组装方法，其特征在于，
多个所述半导体发光元件在沿着与所述基板呈水平的方向进行移动的期间，利用所述电场来朝向与所述基板垂直的方向进行移动而安置于所述基板的预设位置。
12.根据权利要求8所述的半导体发光元件的自组装方法，其特征在于，还包括：
在将多个所述半导体发光元件引导至所述预设位置之后，将所述磁体朝向远离所述基板的方向进行移动，使得残留在所述流体腔室内的半导体发光元件掉落到所述流体腔室的底部的步骤。
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