CN1114790A - 高功率、高脉冲重复频率的小型脉冲激光二极管驱动器 - Google Patents
高功率、高脉冲重复频率的小型脉冲激光二极管驱动器 Download PDFInfo
- Publication number
- CN1114790A CN1114790A CN95101470.6A CN95101470A CN1114790A CN 1114790 A CN1114790 A CN 1114790A CN 95101470 A CN95101470 A CN 95101470A CN 1114790 A CN1114790 A CN 1114790A
- Authority
- CN
- China
- Prior art keywords
- power
- laser
- pulse
- energy
- energy storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 239000003990 capacitor Substances 0.000 claims abstract description 32
- 238000004146 energy storage Methods 0.000 claims abstract description 32
- 238000010278 pulse charging Methods 0.000 claims abstract description 5
- 238000003860 storage Methods 0.000 claims description 9
- 230000001105 regulatory effect Effects 0.000 claims description 5
- 230000004907 flux Effects 0.000 claims 1
- 238000007600 charging Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 230000003750 conditioning effect Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
- H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2144/94 | 1994-02-04 | ||
KR19940002144 | 1994-02-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1114790A true CN1114790A (zh) | 1996-01-10 |
Family
ID=19376847
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN95101470.6A Pending CN1114790A (zh) | 1994-02-04 | 1995-01-28 | 高功率、高脉冲重复频率的小型脉冲激光二极管驱动器 |
Country Status (7)
Country | Link |
---|---|
CN (1) | CN1114790A (pt) |
BR (1) | BR9500547A (pt) |
DE (1) | DE19503611A1 (pt) |
FR (1) | FR2716041A1 (pt) |
GB (1) | GB2286483A (pt) |
IT (1) | IT1273495B (pt) |
TW (1) | TW270261B (pt) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1118116C (zh) * | 1996-01-12 | 2003-08-13 | 株式会社拓普康 | 激光光源装置和激光发光方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19818561A1 (de) * | 1998-04-25 | 1999-11-04 | Jenoptik Jena Gmbh | Impulslasersteuerung |
DE10041079A1 (de) * | 2000-08-22 | 2002-03-14 | Osram Opto Semiconductors Gmbh | Lasermodul mit Ansteuerschaltung |
DE10058774A1 (de) * | 2000-11-27 | 2002-06-13 | Adva Ag | Optische Sendeeinrichtung, insbesondere Laser-Sendeeinrichtung |
US7616669B2 (en) | 2003-06-30 | 2009-11-10 | Electro Scientific Industries, Inc. | High energy pulse suppression method |
KR102138223B1 (ko) | 2011-07-05 | 2020-07-28 | 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 | 사용 중 음향-광학 빔 편향기와 음향-광학 변조기에 온도 안정성을 제공하기 위한 시스템 및 방법 |
DE102012000672A1 (de) * | 2011-10-21 | 2013-04-25 | Lfk-Lenkflugkörpersysteme Gmbh | Verteilte Energieversorgung eines Laserwaffensystems |
CN111244752B (zh) * | 2020-02-04 | 2023-05-30 | 复旦大学 | 一种激光雷达、半导体激光器的驱动模块及驱动方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE364403B (pt) * | 1972-07-03 | 1974-02-18 | Bofors Ab | |
BR8906400A (pt) * | 1989-12-07 | 1991-06-11 | Brasilia Telecom | Acoplador casador de impedancias |
US5121401A (en) * | 1990-05-03 | 1992-06-09 | Motorola, Inc. | Pulsed modulators utilizing transmission lines |
US5280168A (en) * | 1991-11-25 | 1994-01-18 | The United States Of America As Represented By The Secretary Of The Army | Tapered radial transmission line for an optically activated hybrid pulser |
US5155352A (en) * | 1991-11-25 | 1992-10-13 | The United States Of America As Represented By The Secretary Of The Army | Optically activated sub-nanosecond hybrid pulser |
-
1995
- 1995-01-23 GB GB9501246A patent/GB2286483A/en not_active Withdrawn
- 1995-01-28 CN CN95101470.6A patent/CN1114790A/zh active Pending
- 1995-02-03 IT ITMI950188A patent/IT1273495B/it active IP Right Grant
- 1995-02-03 FR FR9501294A patent/FR2716041A1/fr active Pending
- 1995-02-03 DE DE19503611A patent/DE19503611A1/de not_active Withdrawn
- 1995-02-06 BR BR9500547A patent/BR9500547A/pt not_active Application Discontinuation
- 1995-04-07 TW TW084103318A patent/TW270261B/zh active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1118116C (zh) * | 1996-01-12 | 2003-08-13 | 株式会社拓普康 | 激光光源装置和激光发光方法 |
Also Published As
Publication number | Publication date |
---|---|
ITMI950188A0 (it) | 1995-02-03 |
GB9501246D0 (en) | 1995-03-15 |
DE19503611A1 (de) | 1995-08-17 |
BR9500547A (pt) | 1995-10-17 |
IT1273495B (it) | 1997-07-08 |
TW270261B (pt) | 1996-02-11 |
ITMI950188A1 (it) | 1996-08-03 |
GB2286483A (en) | 1995-08-16 |
FR2716041A1 (fr) | 1995-08-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C01 | Deemed withdrawal of patent application (patent law 1993) | ||
WD01 | Invention patent application deemed withdrawn after publication |