CN1114790A - High power, high pulse prepetition frequency, compact, pulsed laser diode driver - Google Patents
High power, high pulse prepetition frequency, compact, pulsed laser diode driver Download PDFInfo
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- CN1114790A CN1114790A CN95101470.6A CN95101470A CN1114790A CN 1114790 A CN1114790 A CN 1114790A CN 95101470 A CN95101470 A CN 95101470A CN 1114790 A CN1114790 A CN 1114790A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 239000003990 capacitor Substances 0.000 claims abstract description 32
- 238000004146 energy storage Methods 0.000 claims abstract description 32
- 238000010278 pulse charging Methods 0.000 claims abstract description 5
- 238000003860 storage Methods 0.000 claims description 9
- 230000001105 regulatory effect Effects 0.000 claims description 5
- 230000004907 flux Effects 0.000 claims 1
- 238000007600 charging Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 230000003750 conditioning effect Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
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- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
- H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Abstract
A high power, pulsed laser diode driver uses an energy storage capacitor of a non-uniform stripline structure with a very low impedance to keep high effect, light weight and closing strcture. The semiconductor laser driver includes a control unit, electric power conditioning and pulse charging unit, and an energy storage unit, a triggering light source and drive unit generating low power laser light, and a photo-active semiconductor switching unit switching capacitance charging power to a high current pulse, and a high power laser array converting the high current pulse into a high power optical pulse to be ouput. The energy storing means comprises an energy storage capacitor of a non-uniform stripline structure with a very low impedance.
Description
The present invention relates to laser diode drive, relate in particular to the pulsed laser diode driver of high power high pulse repetition rate.
Generally speaking, laser driver mainly is divided into several classes of gas laser, solid-state laser and semiconductor laser.Though gas laser and solid-state laser can produce high-output power, huge heaviness and cost height.Have, these lasers exist defective aspect efficient again.On the other hand, the semiconductor laser volume is little, in light weight, cost is low and the efficient height.Because semiconductor laser has such advantage, so utilize semiconductor laser to be the trend that increases gradually recently.
The circuit impedance of conventional high power pulsed laser driver is high.Owing between drive circuit (high impedance) and laser array (extremely low impedance), have CR Critical impedance mismatching, so electric energy is not used to the operate lasers array, most of electric energy but lose with the form of heat.But make high-power semiconductor laser work, just should provide the electric current that exceeds threshold value to semiconductor laser.Therefore, must compensate the energy that the form with heat loses by improving pulsed bias voltage.
Therefore, traditional high power pulsed laser must be designed to have very high power capacity.This has just required more high-power semiconductor switch.
In the high power pulsed laser of routine, along with the increase of energy loss, the required power capacity of semiconductor switch is rapid to be increased precipitously.Therefore, degenerate rapidly, also sharply increased the size and the weight of driver simultaneously such as the rising of output laser pulse and the performance of the laser driver fall time, pulse duration and the pulse repetition frequency (PRF).
A current level that most important parameter provides in the semiconductor laser diode work.When little current level, promptly be lower than the current level of threshold value, laser diode produces certain spontaneous emission, and does not have laser output (laser).Along with the increase of current level, diode laser is by a threshold value, the counter-rotating that becomes of the particle in the laser diode medium here, and laser action begins.
Therefore, when being lower than threshold current, launch few laser, Laser emission efficient is extremely low.In case current level surpasses threshold value, light output sharply increases.
By a large amount of laser diode of making on a monolithic substrate, thereby obtain high-power laser diode, be referred to as laser diode bar or laser array.The laser output power value is proportional to the laser diode number in the laser array.The obvious benefit of this manufacturing technology be production cost low, can produce in batches, microminiaturized and high reliability.Shortcoming is pass device resistance extremely low (more much smaller than 1 ohm).
Because laser array is by a large amount of forward biased P that are connected in parallel-N junction device (being laser diode) is made, so the via resistance of laser array descends along with increasing of laser diode number in the array.Generally speaking, the via resistance scope of superpower laser array is to less than 0.01 ohm from several ohm.Simultaneously, along with the increase (the laser diode number increases in the array) of the output power value of laser array, the current level threshold of these lasers also sharply rises thereupon.
The scheme that the operation of the superpower laser of paired pulses is modulated is a kind of direct modulation, and laser wherein is to flow by the electric current in the control inflow laser array to modulate.For making the pulse laser work of high power, high PRF, must produce the very big current impulse of high PRF by laser driver, and this pulse is sent in the extremely low load of impedance (laser array).
The performance of conventional high power pulsed laser driver depends primarily on the performance of high power semiconductor switches, and these switches for example are thyristor (SCR), fet power transistor (power fet), IGBT (insulated gate bipolar transistor) and bipolar power transistor.
Conventional high power pulsed laser driver has high circuit impedance, and this driver has used circuit layout technology, makes the high-voltage capacitor pulsed bias, makes electric energy by connecting the power semiconductor switch discharge then.Owing to have serious impedance mismatching between drive circuit (high impedance) and laser array (utmost point Low ESR), so electric energy is not used to the operate lasers array, but most of electric energy loses with the form of heat.The heat that produces is so big, makes the heat of fan eliminating from driver must be installed.In addition, (because the operate lasers array needs certain current level) must be by improving the energy that bias voltage is recovered damage.
Increase along with the Power Processing performance of conventional laser driver, other performance of laser driver (for example: the pulse duration PRF of rising and fall time, output laser pulse) also worsen rapidly thereupon, also sharply increased the size and the weight of driver simultaneously.
Therefore, compare conventional high power pulse driver heaviness, huge and their performance such as rise time, fall time and PRF is also seriously limited with laser array of the present invention.
Except that peak value laser output power performance, other important parameter of pulse laser driver is modulating speed when PRF (high), pulse duration, efficient, weight and compactedness.Can produce the high-peak power light pulse with narrow pulse width when high PRF can also keep the pulse laser driver of high efficiency, light weight and miniaturization to be difficult to obtain simultaneously.
Therefore, the object of the present invention is to provide a kind of high power pulsed laser diode (led) driver, make this driver can keep high efficiency, light weight and miniaturization by the energy storage capacitor that low-impedance inhomogeneous line structure is set.
According to the present invention, by being provided, a kind of semiconductor laser drive realizes this purpose, this driver comprises: the control device of control input drive signal, be received in electrical power adjusting and pulse charging apparatus that the said drive signal of controlling in the said control device also produces electric energy thus, reception is regulated and the said electric energy of pulse charging apparatus and the power storage device of the electric energy that storage receives from said electrical power, when depositing power storage device in, electric energy produces the triggering light source and the drive unit of low power laser, the electric capacity rechargeable electrical energy is converted to the light stimulus semiconductor switching device of heavy current pulse, and the said heavy current pulse that derives from said light stimulus semiconductor switching device converted to the superpower laser array of high power light pulses to be exported, wherein said power storage device comprises the energy storage capacitor that impedance is extremely low.
Will know other purpose of the present invention and aspect from the following description of embodiment being carried out with reference to accompanying drawing, wherein:
Fig. 1 is the calcspar by a kind of laser diode drive of the present invention;
Fig. 2 a and 2b are respectively a plane graph and a profile, and expression has an energy storage container of fan-shaped inhomogeneous line structure;
Fig. 3 a and 3b are respectively a plane graph and profile, and expression has the energy storage capacitor of inhomogeneous line structure of concentric strip;
Fig. 4 is a calcspar, represents the interaction process between energy storage capacitor of the present invention and the laser array; And,
Fig. 5 a to 5c is a curve chart, represents the energy Flow order of this driver respectively.
Fig. 1 is the calcspar by high power of the present invention, high PRF, small-sized pulsed laser diode driver.This pulsed laser diode driver comprises: control unit 100, electrical power adjusting and pulse current charge unit 200, energy storage unit 300, triggering light source and driver element 400, light stimulus semiconductor switching module 500 and superpower laser array 600.
Electrical power is regulated and pulse current charge unit 200 is regulated the original electric energy that derives from AC network or battery by the signal from control unit 100, and some energy is delivered to energy storage unit 300.Electrical power is regulated and some energy is also delivered to triggering light source and driver element 400 in pulse current charge unit 200.
Trigger light source and driver element 400 and comprise that is triggered a light source, this excitation source is used to export the laser of low-power (or mid power), and is driven when energy storage unit 300 is finished energy storage and when receiving the control signal of control unit 100 outputs.
Light stimulus semiconductor switching module 500 be polytype light stimulus switch, for example thyratron, p-i-n switch, large-scale GaAs switch, large-scale Si switch, large-scale InP switch, or the like.Switch element 500 is switched on by deriving from the laser that triggers light source and driver element 400, can convert the static of electric capacity charging to heavy current pulse.
Output in the light stimulus semiconductor switching module 500 because trigger the light of light source and driver element 400, so convert the electrostatic energy of electric capacity charging to the heavy current pulse form.Then, superpower laser array 600 has just produced high-power light pulse.
The high power pulse drive circuit of being advised has here adopted brand-new circuit element and diverse operating principle.Do not utilize high-voltage capacitor and high power semiconductor switches modulated laser array, and be to use uneven line structure to be used as the energy storage capacitor, thereby make flexible design, circuit efficiency raising, weight saving and compact conformation.Particularly, by means of this line structure, the energy storage capacitor that makes design have minimum circuit impedance becomes extremely easy.Semiconductor switch by using laser diode to trigger will overcome the critical limitation to power semiconductor switch at an easy rate, for example rising slowly and fall time, little PRF and wide pulse duration.The combination of the success of the semiconductor switch that the laser diode of Low ESR energy storage capacitor and low-power (or mid power) triggers, can obtain a kind of small-sized pulsed laser diode driver, it can produce the light pulse of high PRF, narrow pulse width, high-peak power.
Wherein: C is an electric capacity, and A is the electrode area of capacitor, ε
oBe the dielectric constant of free space, t is a dielectric thickness, ε
rBe the dielectric constant of dielectric, Z
oBe the characteristic impedance of bar line,, and W is the electrode width of bar line.
Utilize the geometric figure of inhomogeneous line structure can design the extremely low energy storage capacitor of impedance.
When electric energy when low-impedance capacitor is transferred to the superpower laser array, most energy is used to make the laser array running.Therefore, low-impedance capacitor has greatly reduced energy self-capacitance device to the energy loss between the laser array transmission period.
The major function of energy storage unit 300 is to preserve electric energy with the form of electrostatic energy temporarily.But when energy blocks switch connection, the boundary condition of the energy storage capacitor in the zone that contacts with this obstruction switch will take place from being opened to the variation of closed condition.In a single day boundary condition changes, and the electrostatic energy that is stored in the capacitor will become capable ripple, and begins to flow to load by switch.
Specifically, when linking the energy storage capacitor in the matched load impedance as shown in Figure 4, the effect of energy storage capacitor is just as a transmission lines.So just produced the current impulse with precipitous rise time and fall time, these are different fully with the discharge waveform with RC time constant attenuation curve.The pulse duration of these pulses approximately is the transit time of the two-way ripple of energy storage capacitor.The current amplitude that the amplitude of electric current arteries and veins obtains greater than the bar line from uniform impedance, this is because gain factor is relevant with impedance conversion.The gained current amplitude is provided by following formula:
I={ (g/ (R
On+ R
m)] * V{ (R
On+ R
m)/(Z
In+ R
On+ R
m), ampere (A)
Wherein: g is the gain factor (scope of coefficient value g is greater than 1 but less than 2) that is produced by the impedance conversion between the inside and outside characteristic impedance of inhomogeneous line structure; R
mBe the external impedance of coupling, comprising the path resistance of laser array; V is a pulsed bias voltage; Z
InIt is the bulk properties impedance of bar line; And, R
OnIt is the path resistance of semiconductor switch.Under desirable matched impedance situation, i.e. R
OnCan ignore and Z
InAnd R
mIdentical, the current impulse of gained becomes following formula:
I=(g/R
m) * (V/2), ampere (A) are except that gain factor g, and the even bar line of this and completely specified coupling is roughly the same.Gain factor g has provided the additional improvement of circuit efficiency.Therefore, use uneven Low ESR bar line structure can produce high circuit efficiency as the energy storage capacitor.
To the control unit 100 that starts operation program next step operational order takes place constantly, the action of driver is begun.At first, starting electrical power regulates and pulse current charge unit 200.By the electrical power that has started regulate and 200 adjustings of pulse current charge unit from the primary energy of AC network or battery, and the capacitor of energy storage unit 300 is carried out pulse current charge with this primary energy.When the pulsed bias voltage of capacitor reaches crest voltage, start triggering light source and driver element 400 by control signal from control unit 100.
Triggering light source and driver element 400 produces the light pulse of fast attack time and light stimulus semiconductor switching module 500 is delivered in this light pulse with high PRF.
Be coupled to fiber-optic wire, transmit from the gained light pulse that triggers light source and driver element 400, and be used to encourage semiconductor switching module 500 by fiber-optic wire.
Afterwards, this triggering light passes the active zone of this semiconductor switch.In a single day this triggering light penetrate in the active zone of semiconductor switch, just can produce abundant right by photic electronics-hole of number, makes the state of switch change to complete closure (conducting) by disconnecting (not conducting) fully.
When switch connection, be stored in electrostatic energy in the capacitor of energy storage unit 300 just with the form discharge of narrow current impulse.Because these current impulses that surpass threshold value flow to laser array 600, so just produced the high-power laser pulse with fast rise and fall time.
In Fig. 5 a, 5b and 5c, provided the graphic sequencing of the energy Flow of this driver.When semiconductor switch was triggered, the shape of the light pulse of gained was very similar with the shape of drive current, just the rise time of output laser pulse than rise time of drive current more hurry up.But the pulse duration of resulting current impulse is by the decision of transit time of the pulse duration of triggering light and the ripple in the energy storage capacitor.
Under the good situation of impedance matching, the pulse duration of output laser pulse approximately is the transit time of two-way ripple in the energy storage capacitor, and is provided by following:
Under the situation of the serious mismatch of impedance, the pulse duration of output laser pulse just and the pulse duration of triggering light closely similar.Its main cause is caused by repeatedly the reflecting of capable ripple that the serious mismatch of impedance causes.
For power semiconductor switch, along with the increase of the power handling capability of power semiconductor switch, the rise time of switch and fall time are all slack-off thereupon, and also increase the turn-on time of switch thereupon.Thereby the PRF performance of power semiconductor switch will descend rapidly along with the slow height of the power handling capability of these switches.
Do not produce current impulse by high power semiconductor switches, but by produce light pulse from the fast attack time of the laser diode of low-power (or mid power), and with this light pulse as triggering light.Just make semiconductor laser drive can produce heavy current pulse with fast rise time.
Therefore, can design by the geometric figure of uneven line structure and have extremely low-impedance small-sized energy storage capacitor.This low-impedance capacitor has greatly reduced at energy from the energy loss of capacitor between the laser array transmission period.
Different with the high power pulsed laser driver of routine, very effectively the pulse driver that finally obtains of the present invention does not need high-power power supply and sending out the hot fan.
High-visible from the above description, the invention provides a kind of high-power pulse laser driver, this driver comprises the energy storage capacitor of inhomogeneous the line structure that a kind of impedance is low.Therefore, the energy loss of laser array can be reduced widely, high efficiency, light weight and compact conformation can be kept again simultaneously.
Though disclose the preferred embodiments of the present invention in order to describe, but those skilled in the art should be realized that, under the condition that does not depart from disclosed scope of the present invention of appended claims and design, various improvement, increase and replacement all are possible.
Claims (2)
1. semiconductor laser drive comprises:
Control device is used to control input drive signal;
Electrical power is regulated and pulse charging apparatus, is used for being received in the said drive signal that said control device controls and therefore produces electric flux;
Power storage device is used to receive from said electrical power and regulates and the said electric energy of pulse charging apparatus and the electric energy that storage receives;
Trigger light source and drive unit, be used for when electric energy deposits power storage device in, producing low power laser;
The light stimulus semiconductor switching device is used for the electric capacity rechargeable electrical energy is converted to heavy current pulse; And
The superpower laser array is used for the said heavy current pulse that derives from said light stimulus semiconductor switching device is converted to high power light pulses in order to output;
Wherein, said power storage device is made up of extremely low-impedance energy storage container.
2. semiconductor laser drive as claimed in claim 1, wherein said energy storage capacitor has a kind of inhomogeneous impedance bar line structure.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR19940002144 | 1994-02-04 | ||
| KR2144/94 | 1994-02-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1114790A true CN1114790A (en) | 1996-01-10 |
Family
ID=19376847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN95101470.6A Pending CN1114790A (en) | 1994-02-04 | 1995-01-28 | High power, high pulse prepetition frequency, compact, pulsed laser diode driver |
Country Status (7)
| Country | Link |
|---|---|
| CN (1) | CN1114790A (en) |
| BR (1) | BR9500547A (en) |
| DE (1) | DE19503611A1 (en) |
| FR (1) | FR2716041A1 (en) |
| GB (1) | GB2286483A (en) |
| IT (1) | IT1273495B (en) |
| TW (1) | TW270261B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1118116C (en) * | 1996-01-12 | 2003-08-13 | 株式会社拓普康 | Laser light-source device and laser light-emitting method thereof |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19818561A1 (en) * | 1998-04-25 | 1999-11-04 | Jenoptik Jena Gmbh | Pulsed laser controller for producing short, high energy laser pulses |
| DE10041079A1 (en) * | 2000-08-22 | 2002-03-14 | Osram Opto Semiconductors Gmbh | Laser module with control circuit |
| DE10058774A1 (en) * | 2000-11-27 | 2002-06-13 | Adva Ag | Optical transmitter, especially laser transmitter, has amplifier unit dimensioned so permissible load produced by parallel Ohmic resistance, signal line and transmitter unit impedances |
| US7616669B2 (en) | 2003-06-30 | 2009-11-10 | Electro Scientific Industries, Inc. | High energy pulse suppression method |
| DE112012002844T5 (en) | 2011-07-05 | 2014-04-24 | Electronic Scientific Industries, Inc. | Method for laser processing with a thermally stabilized acousto-optical beam deflector and thermally stabilized high-speed laser processing system |
| DE102012000672A1 (en) * | 2011-10-21 | 2013-04-25 | Lfk-Lenkflugkörpersysteme Gmbh | Distributed power supply of a laser weapon system |
| CN111244752B (en) * | 2020-02-04 | 2023-05-30 | 复旦大学 | Laser radar, driving module of semiconductor laser and driving method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE364403B (en) * | 1972-07-03 | 1974-02-18 | Bofors Ab | |
| BR8906400A (en) * | 1989-12-07 | 1991-06-11 | Brasilia Telecom | IMPEDANCES CASER COUPLER |
| US5121401A (en) * | 1990-05-03 | 1992-06-09 | Motorola, Inc. | Pulsed modulators utilizing transmission lines |
| US5280168A (en) * | 1991-11-25 | 1994-01-18 | The United States Of America As Represented By The Secretary Of The Army | Tapered radial transmission line for an optically activated hybrid pulser |
| US5155352A (en) * | 1991-11-25 | 1992-10-13 | The United States Of America As Represented By The Secretary Of The Army | Optically activated sub-nanosecond hybrid pulser |
-
1995
- 1995-01-23 GB GB9501246A patent/GB2286483A/en not_active Withdrawn
- 1995-01-28 CN CN95101470.6A patent/CN1114790A/en active Pending
- 1995-02-03 FR FR9501294A patent/FR2716041A1/en active Pending
- 1995-02-03 DE DE19503611A patent/DE19503611A1/en not_active Withdrawn
- 1995-02-03 IT ITMI950188A patent/IT1273495B/en active IP Right Grant
- 1995-02-06 BR BR9500547A patent/BR9500547A/en not_active Application Discontinuation
- 1995-04-07 TW TW084103318A patent/TW270261B/zh active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1118116C (en) * | 1996-01-12 | 2003-08-13 | 株式会社拓普康 | Laser light-source device and laser light-emitting method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2286483A (en) | 1995-08-16 |
| GB9501246D0 (en) | 1995-03-15 |
| BR9500547A (en) | 1995-10-17 |
| DE19503611A1 (en) | 1995-08-17 |
| ITMI950188A1 (en) | 1996-08-03 |
| TW270261B (en) | 1996-02-11 |
| ITMI950188A0 (en) | 1995-02-03 |
| FR2716041A1 (en) | 1995-08-11 |
| IT1273495B (en) | 1997-07-08 |
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