CN111474821A - Defect repairing method for mask - Google Patents
Defect repairing method for mask Download PDFInfo
- Publication number
- CN111474821A CN111474821A CN202010343558.5A CN202010343558A CN111474821A CN 111474821 A CN111474821 A CN 111474821A CN 202010343558 A CN202010343558 A CN 202010343558A CN 111474821 A CN111474821 A CN 111474821A
- Authority
- CN
- China
- Prior art keywords
- water
- mask
- defect
- insoluble coating
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000007547 defect Effects 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 38
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 33
- 239000011651 chromium Substances 0.000 claims abstract description 33
- 239000011248 coating agent Substances 0.000 claims abstract description 32
- 238000000576 coating method Methods 0.000 claims abstract description 32
- 239000007788 liquid Substances 0.000 claims abstract description 19
- 230000008439 repair process Effects 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 16
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 5
- 239000003973 paint Substances 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- 238000001259 photo etching Methods 0.000 abstract description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 8
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 229960000583 acetic acid Drugs 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 239000012362 glacial acetic acid Substances 0.000 description 4
- 229920000742 Cotton Polymers 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000000861 blow drying Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009875 water degumming Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/50—Reuse, recycling or recovery technologies
- Y02W30/82—Recycling of waste of electrical or electronic equipment [WEEE]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The invention relates to a defect repairing method of a mask, which provides the mask; searching for defects on the mask plate under a microscope, and forming a water-insoluble coating ring around the defects; dropwise adding a water-based degumming solution into the area surrounded by the water-insoluble coating ring, removing the photoresist in the area surrounded by the water-insoluble coating ring, and then removing the water-based degumming solution in the water-insoluble coating ring; dripping chromium corrosive liquid into the area surrounded by the water-insoluble coating ring to repair the defect; placing the mask plate with the repaired defects in a degumming solution to remove the photoresist on the plate surface; removing the water-insoluble coating ring of the layout; and cleaning the mask to obtain the repaired mask. The repairing method does not need secondary photoresist homogenizing photoetching to remove the defects, the defects are circled by using the water-insoluble coating while the defects are detected, all the defects are identified, and residual chromium is removed after photoresist removing.
Description
Technical Field
The invention relates to a defect repairing method of a mask, belonging to the field of semiconductors.
Background
In the semiconductor field, pattern replication and transfer can be achieved using photolithography to achieve a product with specific design requirements. In the manufacturing process of the mask, defects such as pinholes, residual chromium (chromium point defects) and the like appear in the copying process of the pattern due to environmental cleanliness or defects generated by a substrate to be exposed in a coating or gluing process.
For defects of a graph in a copying process, a repair technology mainly adopted in the prior art comprises the following steps:
firstly, the focused ion beam repairs the chromium defect on the mask, however, the focused ion beam repair technology cannot meet the repair requirement aiming at the large-area defect, and the product is scrapped.
And secondly, the defects formed by one-time photoetching are removed by adopting multiple times of photoetching, the equipment is required to meet the requirement of accurate alignment by multiple times of photoetching, and multiple repeated processes are required, so that the cost is higher.
And thirdly, defects formed by primary photoetching are repaired by cleaning the mask plate, coating photoresist on the surface of the mask plate for the second time, positioning the defects by using a microscope, exposing the positioning area by using the white light of the microscope, and spraying corrosive liquid. The method adopts a microscope for focusing exposure, the exposure time is long, the exposure area is limited by the range of an objective lens of the microscope, the exposure area is not controllable, and the method has low efficiency.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a simple and easy-to-operate method for repairing the defects of the mask.
In order to solve the technical problems, the technical scheme of the invention is as follows:
a defect repairing method for a mask comprises the following steps:
s1, providing a mask plate;
the mask is obtained by exposing, developing and etching a photoresist-homogenized chromium plate, and the mask is not subjected to photoresist stripping treatment;
s2, searching for the defects on the mask plate under a microscope, and forming a water-insoluble coating ring around the defects;
s3, dropwise adding a water-based degumming solution into the area surrounded by the water-insoluble coating ring, removing the photoresist in the area surrounded by the water-insoluble coating ring, and then removing the water-based degumming solution in the water-insoluble coating ring;
s4, dripping chromium corrosive liquid into the area surrounded by the water-insoluble coating ring to repair the defect;
s5, placing the mask plate with the repaired defects in the glue removing solution to remove the photoresist on the plate surface;
removing the water-insoluble coating ring of the layout;
and S6, cleaning the mask plate processed in the S5 to obtain a repaired mask plate.
Further, in S2, the microscope is an optical microscope.
Further, in S2, the defect is a chromium point defect.
Further, in S2, looping the defect with a pen to form a loop of water-insoluble coating; the pen is one of an oil pen and a paint pen. I.e. a pen is used to mark a circle-shaped cross-section around the defect. Optionally, the oil pen is a marker pen.
Further, in S3, the water degumming solution is a 3-8wt% alkali solution.
Generally, in S3, 1 to 3 drops of water-based degumming solution are dropped into the region surrounded by the water-insoluble coating ring, and the water-based degumming solution can be specifically determined according to the size of the defect.
Optionally, the chromium etching solution is prepared from 700g of cerium ammonium nitrate, 122.5ml of glacial acetic acid and 3500ml of deionized water.
Further, in S5, the mask after repairing the defect is placed in a degumming solution to remove the photoresist on the layout, and then the water-insoluble coating ring on the layout is removed.
Further, in S5, the water-insoluble coating ring is removed with an organic solvent or concentrated sulfuric acid. Optionally, the organic solvent is isopropanol.
Further, in S6, the mask processed in S5 is subjected to ultrasonic cleaning, and a repaired mask is obtained.
Optionally, the exposed, developed and etched mask is examined under a microscope for defects on the layout on the premise of not removing photoresist, all the defects on the layout are enclosed by a water-insoluble oil pen, and water medium repair is carried out on the enclosed area by utilizing the principle that the locus of the oil pen is water-insoluble, the surface energy of a water-insoluble coating ring is low, and the contact angle is large, so that the repair medium cannot seep out of the water-insoluble coating ring to pollute other areas. Dipping all the circled areas to be repaired on the layout with a hairbrush to remove glue solution, removing the surface photoresist of the defect area, exposing the residual chromium point defect, dipping chromium corrosive liquid and dripping the chromium corrosive liquid at the chromium point defect position to repair the layout defect. And placing the repaired mask in a photoresist removing liquid to remove the photoresist on the mask, cleaning the residual track of the mask by using isopropanol or concentrated sulfuric acid, and performing ultrasonic cleaning to obtain the repaired mask.
The invention utilizes the water-insoluble coating with low surface energy and large contact angle to circle the defect, and then utilizes the degumming solution and the chromium corrosive liquid to repair the defect in the circled range, so that the surrounding ring can not seep out, and other areas outside the ring can not be polluted.
The repairing method does not need secondary photoresist homogenizing photoetching to remove the defects, the defects are circled by using the water-insoluble coating while the defects are detected, all the defects are identified, and residual chromium is removed after photoresist removing.
Detailed Description
The following description describes alternative embodiments of the invention to teach one of ordinary skill in the art how to make and use the invention. Some conventional aspects have been simplified or omitted for the purpose of teaching the present invention.
Example 1
Exposing, developing and corroding the uniform photoresist chromium plate to obtain a mask plate, detecting under a microscope to find a chromium point defect, using an oily mark pen to circle the defect, dropwise adding 5wt% of sodium hydroxide photoresist removing liquid into a circled area to remove photoresist in the circled area, removing the photoresist, absorbing the photoresist removing liquid by using a cotton stick, continuously dropwise adding chromium corrosion liquid into the circled area to remove the chromium point defect, placing the repaired mask plate in 5wt% of sodium hydroxide photoresist removing liquid to remove the photoresist on the plate surface, rinsing the plate surface by using pure water, drying by using an air gun, placing the repaired mask plate in concentrated sulfuric acid for soaking for 5min to remove other stains on the mark surface of the mark, and cleaning by using ultrasonic waves to obtain the repaired mask plate;
the chromium corrosion solution is prepared from 700g of ceric ammonium nitrate, 122.5ml of glacial acetic acid and 3500ml of deionized water.
Example 2
Exposing, developing and corroding the uniform photoresist chromium plate to obtain a mask plate, detecting under a microscope to find a chromium point defect, using a paint pen to circle the defect, dropwise adding 5wt% of sodium hydroxide photoresist removing liquid into a circled area to remove photoresist in the circled area, removing the photoresist, absorbing the photoresist removing liquid by using a cotton stick, further dropwise adding chromium corrosion liquid into the circled area to remove the chromium point defect, placing the repaired mask plate in 5wt% of sodium hydroxide photoresist removing liquid to remove photoresist on the plate surface, rinsing the plate surface by using pure water, blow-drying by using an air gun, placing the repaired mask plate in concentrated sulfuric acid for soaking for 5min to remove other stains on the surface of the mark of the paint pen, and obtaining the repaired mask plate after ultrasonic cleaning;
the chromium corrosion solution is prepared from 700g of ceric ammonium nitrate, 122.5ml of glacial acetic acid and 3500ml of deionized water.
Comparative example 1
Exposing, developing and corroding the uniform photoresist chromium plate to obtain a mask plate, detecting under a microscope to find a chromium point defect, dropwise adding 5wt% of sodium hydroxide photoresist removing liquid to remove photoresist in a defect area, absorbing the photoresist removing liquid by using a cotton stick after removing the photoresist, and then continuously dropwise adding chromium corrosion liquid to remove the chromium point defect;
the chromium corrosion solution is prepared from 700g of ceric ammonium nitrate, 122.5ml of glacial acetic acid and 3500ml of deionized water.
The foregoing examples are set forth to illustrate the present invention more clearly and are not to be construed as limiting the scope of the invention, which is defined in the appended claims to which the invention pertains, as modified in all equivalent forms, by those skilled in the art after reading the present invention.
Claims (8)
1. A defect repairing method of a mask is characterized by comprising the following steps:
s1, providing a mask plate;
the mask is obtained by exposing, developing and etching a photoresist-homogenized chromium plate, and the mask is not subjected to photoresist stripping treatment;
s2, searching for defects on the mask plate under a microscope, and forming a water-insoluble coating ring around the defects;
s3, dropwise adding a water-based degumming solution into the area surrounded by the water-insoluble coating ring, removing the photoresist in the area surrounded by the water-insoluble coating ring, and then removing the water-based degumming solution in the water-insoluble coating ring;
s4, dripping chromium corrosive liquid into the area surrounded by the water-insoluble coating ring to repair the defect;
s5, placing the mask plate with the repaired defects in the glue removing solution to remove the photoresist on the plate surface; removing the water-insoluble coating ring of the layout;
and S6, cleaning the mask plate processed in the S5 to obtain a repaired mask plate.
2. The defect repair method according to claim 1, wherein in S2, the microscope is an optical microscope.
3. The defect repair method according to claim 1, wherein the defect is a chromium point defect in S2.
4. The defect repair method according to claim 1, wherein in S2, the defect is circled with a pen to form a circle of the water-insoluble coating material; the pen is one of an oil pen and a paint pen.
5. The defect repairing method according to claim 1, wherein in S3, the water-based degumming solution is a lye solution with a concentration of 3-8 wt%.
6. The defect repairing method according to claim 1, wherein in S5, the mask after repairing the defect is placed in the degumming solution to remove the photoresist on the layout, and then the water-insoluble coating ring on the layout is removed.
7. The defect repair method according to claim 1, wherein in S5, the water-insoluble coating ring is removed by an organic solvent or concentrated sulfuric acid.
8. The defect repair method of any one of claims 1 to 6, wherein in S6, the mask processed in S5 is subjected to ultrasonic cleaning to obtain a repaired mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010343558.5A CN111474821B (en) | 2020-04-27 | 2020-04-27 | Mask defect repairing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010343558.5A CN111474821B (en) | 2020-04-27 | 2020-04-27 | Mask defect repairing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111474821A true CN111474821A (en) | 2020-07-31 |
| CN111474821B CN111474821B (en) | 2023-07-25 |
Family
ID=71762849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010343558.5A Active CN111474821B (en) | 2020-04-27 | 2020-04-27 | Mask defect repairing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111474821B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112230511A (en) * | 2020-10-21 | 2021-01-15 | 上海华力集成电路制造有限公司 | Method for removing contaminant particles on the surface of photomask protective film |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102169285A (en) * | 2011-04-21 | 2011-08-31 | 深圳市科利德光电材料股份有限公司 | Method for repairing redundant chromium points of chromium plate |
| CN202362583U (en) * | 2011-12-09 | 2012-08-01 | 中芯国际集成电路制造(上海)有限公司 | Manual etching device |
| CN103838077A (en) * | 2012-11-23 | 2014-06-04 | 中芯国际集成电路制造(上海)有限公司 | Defect treating method of phase shifting mask |
-
2020
- 2020-04-27 CN CN202010343558.5A patent/CN111474821B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102169285A (en) * | 2011-04-21 | 2011-08-31 | 深圳市科利德光电材料股份有限公司 | Method for repairing redundant chromium points of chromium plate |
| CN202362583U (en) * | 2011-12-09 | 2012-08-01 | 中芯国际集成电路制造(上海)有限公司 | Manual etching device |
| CN103838077A (en) * | 2012-11-23 | 2014-06-04 | 中芯国际集成电路制造(上海)有限公司 | Defect treating method of phase shifting mask |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112230511A (en) * | 2020-10-21 | 2021-01-15 | 上海华力集成电路制造有限公司 | Method for removing contaminant particles on the surface of photomask protective film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111474821B (en) | 2023-07-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8054444B2 (en) | Lens cleaning module for immersion lithography apparatus | |
| CN100355024C (en) | Method for forming resist pattern and method for manufacturing semiconductor device | |
| US8002899B2 (en) | Method and apparatus for mask pellicle adhesive residue cleaning | |
| CN103257534A (en) | Photoetching rework photoresist removing technology | |
| JPH04124668A (en) | Peeling agent compound for resist | |
| CN111474821B (en) | Mask defect repairing method | |
| CN1373863A (en) | Photoresist remover composition | |
| US10613442B2 (en) | Compositions and methods that promote charge complexing copper protection during low pKa driven polymer stripping | |
| CN108767484B (en) | A frequency selective surface preparation process, the surface and the workpiece having the surface | |
| US20150219996A1 (en) | Composition for removing substances from substrates | |
| CN202277978U (en) | Cleaning device for light-sensitive lacquer sprayer | |
| CN114286498B (en) | PCB preparation method and PCB | |
| JP7389886B2 (en) | Photoresist remover composition | |
| KR20090030491A (en) | Cleaning solution and immersion lithography process for immersion lithography system | |
| CN112605067B (en) | Laser cleaning method for resin matrix composite surface coating | |
| CN110676156A (en) | Photoetching semiconductor processing technology | |
| US20070066071A1 (en) | Novel organic remover for advanced reticle contamination cleaning | |
| KR100324172B1 (en) | Photoresist stripping composition and photoresist stripping method using the same | |
| JPH03139647A (en) | How to modify a mask | |
| CN221707885U (en) | Defect repairing device for photomask | |
| JP7377206B2 (en) | Photoresist remover composition | |
| KR100835485B1 (en) | Method of manufacturing semiconductor device using immersion lithography process | |
| CN106252205B (en) | Metal residual minimizing technology in a kind of integrated circuit mask version | |
| JPH08298253A (en) | Method of cleaning the substrate used when manufacturing the pellicle film | |
| CN118649985A (en) | A method for recycling photomask substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |