JPH08298253A - Cleaning method of substrate used for manufacturing pellicle film - Google Patents

Cleaning method of substrate used for manufacturing pellicle film

Info

Publication number
JPH08298253A
JPH08298253A JP4183295A JP4183295A JPH08298253A JP H08298253 A JPH08298253 A JP H08298253A JP 4183295 A JP4183295 A JP 4183295A JP 4183295 A JP4183295 A JP 4183295A JP H08298253 A JPH08298253 A JP H08298253A
Authority
JP
Japan
Prior art keywords
substrate
cleaning
surfactant
cleaning method
aqueous solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4183295A
Other languages
Japanese (ja)
Inventor
Hitomi Matsuzaki
仁美 松崎
Tokinori Ago
時則 吾郷
Tokuo Nakayama
徳夫 中山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Petrochemical Industries Ltd
Original Assignee
Mitsui Petrochemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Petrochemical Industries Ltd filed Critical Mitsui Petrochemical Industries Ltd
Priority to JP4183295A priority Critical patent/JPH08298253A/en
Publication of JPH08298253A publication Critical patent/JPH08298253A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To remove residues of fluororesin and a ground layer attached to the edge and rear of a substrate by a method wherein the substrate is dipped into a hot alkali water solution or a heated cleaning agent which contains a surfactant. CONSTITUTION: A substrate 4 is dipped into a hot alkali water solution 2 or a cleaning agent 2 which contains a surfactant in a heated tank 1. The hot alkali water solution 2 contains 1% or more by weight of strong alkaline chemical compound or is set higher than 13 in pH value. The cleaning agent 2 contains 1% or more by weight of the surfactant. Hot alkali water solution 2 or a heated cleaning agent 2 which contains the surfactant is circulated by a pump 7 and jetted out against the end face of the substrate 4. It is preferable that an ultrasonic cleaning operation is carried out while the substrate 4 is dipped.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、マスクやレチクル(以
下「マスク」という)に塵埃等が付着するのを防止する
目的で用いられる保護装置の薄膜を製造するために用い
た基板の洗浄方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a substrate used for manufacturing a thin film of a protective device used for the purpose of preventing dust or the like from adhering to a mask or reticle (hereinafter referred to as "mask"). Regarding

【0002】[0002]

【従来の技術】半導体集積回路の製造において、レジス
ト材を塗布した半導体ウエハーを露光によりパターンニ
ングする工程は集積回路の歩留まりを左右する重要な工
程である。この工程において、パターン原図であるマス
ク上に傷或いは塵埃が存在すると、パターンと共に傷あ
るいは異物がウエハー上に印刷され、生産される回路の
短絡、断線等の原因となる。従ってマスクの保護及び防
塵は生産性向上の上できわめて重要な課題である。この
ためにマスクの保護、防塵を目的としてマスクの片面あ
るいは両面をペリクルと呼ばれる透明なプラスチック薄
膜でカバーすることが提案され、実用化されている。
2. Description of the Related Art In the manufacture of semiconductor integrated circuits, the step of patterning a semiconductor wafer coated with a resist material by exposure is an important step that affects the yield of integrated circuits. In this step, if scratches or dust are present on the mask, which is the original pattern, the scratches or foreign substances are printed on the wafer together with the pattern, which may cause a short circuit or disconnection of the produced circuit. Therefore, protection and dust protection of the mask are extremely important issues for improving productivity. For this reason, it has been proposed and put into practical use to cover one or both surfaces of the mask with a transparent plastic thin film called a pellicle for the purpose of protecting the mask and preventing dust.

【0003】従来、フォトリソグラフイー工程で使用さ
れる露光光源としては、高圧水銀ランプの輝線のうち、
g線、h線、i線が使用され、ペリクル膜としては、ニ
トロセルロース、酢酸セルロース、ポリビニルアルコー
ル等の膜材が主として使用されてきた。しかし近年、半
導体工業における技術の進歩に伴い、集積回路の高密度
化、高集積度化が進み、ウエハー上への投影パターンの
線幅、線間隔が共に小さくなってきている。これに応じ
て露光光線の短波長化も進み、KrFなどのエキシマレ
ーザーによる紫外線(波長250nm以下)が使用され
始めている。
Conventionally, as the exposure light source used in the photolithography process, among the bright lines of a high pressure mercury lamp,
G-line, h-line and i-line are used, and as the pellicle film, film materials such as nitrocellulose, cellulose acetate and polyvinyl alcohol have been mainly used. However, in recent years, with the progress of technology in the semiconductor industry, the density and integration of integrated circuits have increased, and both the line width and the line spacing of a projected pattern on a wafer have become smaller. In response to this, the wavelength of exposure light has been shortened, and ultraviolet rays (wavelength of 250 nm or less) by excimer laser such as KrF have begun to be used.

【0004】光の波長が短くなるにつれエネルギーが大
きくなるため、これらの波長領域で使用されるペリクル
膜には十分な耐光性が要求されるが、従来の保護膜では
深紫外線に対する十分な耐光性が低く、十分な耐久性が
得られなかった。このような要求に応える材料として、
含フッ素樹脂からなるペリクルが種々提案されている。
Since the energy increases as the wavelength of light becomes shorter, the pellicle film used in these wavelength regions is required to have sufficient light resistance, whereas the conventional protective film has sufficient light resistance to deep ultraviolet rays. Was low, and sufficient durability was not obtained. As a material that meets such requirements,
Various pellicles made of a fluorine-containing resin have been proposed.

【0005】樹脂薄膜の製膜は、一般に高速で回転する
石英ガラスやシリコンウエハなどの基板上に樹脂溶液を
滴下するスピンコート法により行なわれ、乾燥後、基板
より剥離して膜を得ている。製膜は基板上に直接行うこ
ともできるが、含フッ素樹脂の場合、剥離時に延びたり
変形したりし易いので、含フッ素樹脂との親和性が小さ
く、フッ素原子を含まない樹脂を予め下地層として基板
上に形成し、それを製膜用基板として用いることが多
い。
The film formation of the resin thin film is generally carried out by a spin coating method in which a resin solution is dropped on a substrate such as quartz glass or a silicon wafer which rotates at a high speed. After drying, the film is peeled from the substrate to obtain a film. . Film formation can be performed directly on the substrate, but in the case of a fluororesin, since it easily extends or deforms during peeling, it has a low affinity with the fluororesin and a resin that does not contain a fluorine atom is previously formed as a base layer. Is often formed on a substrate and used as a film-forming substrate.

【0006】含フッ素樹脂薄膜を剥離した基板には、エ
ッジや裏面に樹脂の残部、表面には下地層が残ってお
り、基板を再使用するに当たっては、こうした基板上に
残留する樹脂を完全に除去する必要がある。薄膜の材料
がセルロース系樹脂やポリビニールアルコールの場合に
は、まず硫酸等の酸により基板に残存する樹脂を分解除
去し、その後純水中で超音波洗浄や、スクラビングを行
ってから、IPA蒸気洗浄乾燥を行えば、十分再使用す
ることができた。しかしながら、含フッ素樹脂の場合、
硫酸では分解されないため、一度使用した基板は再使用
が困難となりがちであった。
On the substrate from which the fluorine-containing resin thin film has been peeled off, the residual resin remains on the edges and the back surface, and the underlayer remains on the front surface. When the substrate is reused, the resin remaining on the substrate is completely removed. Need to be removed. When the material for the thin film is cellulose resin or polyvinyl alcohol, the resin remaining on the substrate is first decomposed and removed with an acid such as sulfuric acid, and then ultrasonic cleaning or scrubbing is performed in pure water before IPA vaporization. If it was washed and dried, it could be reused sufficiently. However, in the case of fluorine-containing resin,
Since it was not decomposed by sulfuric acid, it was difficult to reuse the substrate once used.

【0007】[0007]

【発明が解決しようとする課題】本発明は、こうした含
フッ素樹脂薄膜を製造するために使用した基板に対して
有効な洗浄方法を提供することを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide an effective cleaning method for a substrate used for producing such a fluororesin thin film.

【0008】[0008]

【課題を解決するための手段】本発明者等はそのため、
含フッ素樹脂薄膜を製造するために用いた基板の洗浄方
法において、熱アルカリ水溶液または加熱された界面活
性剤を含む洗浄剤に浸すことにより、基板エッジ部や裏
面に付着した含フッ素樹脂の残部や下地層を剥離除去す
るのに効果のあることを見い出した。
Therefore, the present inventors have
In the method of cleaning a substrate used for producing a fluororesin thin film, by dipping it in a hot alkaline aqueous solution or a cleaning agent containing a heated surfactant, the remaining portion of the fluororesin attached to the substrate edge part or the back surface or It has been found that it is effective for removing and removing the underlayer.

【0009】更に浸漬時に超音波を加える。 熱アルカリ水溶液または加熱された界面活性剤を含む
洗浄剤を強制循環し、浸漬した基板に吹付ける。 などの方法により一層効果があがり、また浸漬後、シャ
ワーリングを行うと、より一層効果が上がることなどを
見出し、本発明を完成するに至った。
Further, ultrasonic waves are applied during the immersion. A hot alkaline aqueous solution or a detergent containing a heated surfactant is forcedly circulated and sprayed onto the immersed substrate. It was found that the effect is further enhanced by the method described above, and that the effect is further enhanced by performing showering after the immersion, and the present invention has been completed.

【0010】本発明が対象とする洗浄基板は、含フッ素
樹脂による薄膜を製造する工程で用いた基板であればよ
く、含フッ素樹脂はその種類を問わないが、そのうちの
いくつかを例示すれば、旭硝子株式会社製の含フッ素樹
脂(商品名「CYTOP」)、米国DuPont社製含
フッ素樹脂(商品名「テフロンAF1600」)などが
挙げられる。
The cleaning substrate targeted by the present invention may be any substrate used in the step of producing a thin film made of a fluororesin, and the fluororesin may be of any kind. , Asahi Glass Co., Ltd. fluorine-containing resin (trade name "CYTOP"), DuPont USA fluorine-containing resin (trade name "Teflon AF1600") and the like.

【0011】したがって本発明は、含フッ素樹脂薄膜の
製造に用いた基板の洗浄方法において、温度が70℃以
上、好ましくは80〜100℃に加熱された熱アルカリ
水溶液、又は界面活性剤を含む洗浄剤に浸漬することを
特長とする。熱アルカリ水溶液は強アルカリ性化合物を
1wt%以上、好ましくは2〜5wt%含むか、又はP
Hが13以上であるものを用いる。強アルカリ性化合物
が1wt%以下又はPHが13以下では効果が小さく、
また10wt%以上では基板がガラス等の場合、逆に傷
める危険性がある。
Therefore, the present invention relates to a method for cleaning a substrate used for producing a fluorine-containing resin thin film, in which a hot alkaline aqueous solution heated to a temperature of 70 ° C. or higher, preferably 80 to 100 ° C., or a cleaning agent containing a surfactant is used. It is characterized by being immersed in the agent. The hot alkaline aqueous solution contains 1 wt% or more, preferably 2 to 5 wt% of a strong alkaline compound, or P
The one having H of 13 or more is used. If the amount of the strongly alkaline compound is 1 wt% or less or the pH is 13 or less, the effect is small,
On the other hand, if it is 10 wt% or more, when the substrate is glass or the like, there is a risk of damage.

【0012】界面活性剤を含む洗浄剤における、界面活
性剤の使用濃度としては、原液をそのまま使用してもよ
いし、希釈して使用してもよい。希釈濃度としては、界
面活性剤の種類にもよるが、1〜80wt%程度が好ま
しい。希釈剤としては、通常水を使用するが、その他エ
チルアルコ−ル、イソプロピルアルコ−ルや、トルエ
ン、ヘキサンなどの有機溶剤も使用することができる。
As the concentration of the surfactant used in the detergent containing the surfactant, the undiluted solution may be used as it is or the diluted solution may be used. The dilution concentration depends on the kind of the surfactant, but is preferably about 1 to 80 wt%. Water is usually used as the diluent, but other organic solvents such as ethyl alcohol, isopropyl alcohol, toluene and hexane can also be used.

【0013】基板を浸漬する時間は長いほうが当然効果
は大きいが、一般に2時間以下、好ましくは1時間以
下、作業効率を考えると、30秒以上5分以内とするの
が好ましい。そして、好ましくは浸漬時に超音波洗浄を
行う。また別の好ましい方法では、熱アルカリ水溶液ま
たは加熱された界面活性剤を含む洗浄剤が強制循環され
て基板に吹き付けられる。
The longer the time for immersing the substrate is, of course, the greater the effect. However, in general, it is preferably 2 hours or less, preferably 1 hour or less, and in view of work efficiency, it is preferably 30 seconds or more and 5 minutes or less. Then, ultrasonic cleaning is preferably performed at the time of immersion. In another preferred method, a hot alkaline aqueous solution or a cleaning agent containing a heated surfactant is forcedly circulated and sprayed onto the substrate.

【0014】基板への吹付け方法には、例えば図1に示
すように、槽1内の洗浄液2に縦向きに設けた吹付け管
3と同一平面上に基板4を縦向きにして浸漬し、その一
側端面に吹付け管3より洗浄液を吹付ける方法、図2に
示すように、槽内の洗浄液に縦向きにして浸漬した基板
4の両面中央部に吹付け管5により洗浄液を吹付ける方
法、図3に示すように、槽内の洗浄液2に基板4を縦向
きにして浸漬し、その下方の基板4と同一平面上の吹付
け管6より基板4の下側端面に洗浄液を吹付ける方法な
どがあるが、この中では、図3に示す方法が剥離効果が
優れ好ましい。
For example, as shown in FIG. 1, the method of spraying onto the substrate is to immerse the substrate 4 in the cleaning liquid 2 in the tank 1 in the same plane as the spray pipe 3 provided in the vertical direction in the vertical direction. The method of spraying the cleaning liquid from the spray pipe 3 on one end surface thereof, as shown in FIG. 2, the cleaning liquid is sprayed by the spray pipe 5 to the central portions of both surfaces of the substrate 4 which is vertically immersed in the cleaning liquid in the bath. As shown in FIG. 3, the substrate 4 is immersed vertically in the cleaning liquid 2 in the bath, and the cleaning liquid is applied to the lower end surface of the substrate 4 through the spray pipe 6 on the same plane as the substrate 4 below. There are spraying methods and the like. Among them, the method shown in FIG. 3 is preferable because of its excellent peeling effect.

【0015】図3に示す方法においても、洗浄液は基板
に沿って均一に吹付けられることが望ましい。図4は、
そのために改善した治具について示すもので、ボックス
状のヘッダー8には、上面に二列の吹き出し口9が形成
され、ヘッダー内に送り込まれた洗浄液は、ヘッダー内
が均一圧力に維持されることにより、ヘッダー8の吹き
出し口9より均一に吹き出すようになる。なお基板は洗
浄液が基板両面に均一に吹き付けられるように、図示す
るように、吹き出し口列間の中央に縦向きに配置するの
が望ましい。
Also in the method shown in FIG. 3, it is desirable that the cleaning liquid be uniformly sprayed along the substrate. FIG.
This shows an improved jig for this purpose. The box-shaped header 8 has two rows of outlets 9 formed on the upper surface, and the cleaning liquid sent into the header is maintained at a uniform pressure in the header. As a result, the air is blown out evenly through the air outlet 9 of the header 8. As shown in the figure, it is desirable to arrange the substrate vertically so that the cleaning liquid is uniformly sprayed on both sides of the substrate.

【0016】更に好ましい方法では、熱アルカリ水溶液
または加熱された界面活性剤を含む洗浄剤に所定時間浸
漬後、水によるシャワーリングが行われる。本方法で用
いる強アルカリ性化合物としては、例えば、NaOH、
KOH、Ca(OH)2 等が挙げられる。また界面活性
剤としては、排水汚染の心配がない無リン酸系のものが
好ましい。こうしたものとしては例えば、アルキルベン
ゼンスルホン酸塩、アルキルナフタレンスルホン酸塩、
高級アルコール硫酸エステル塩、アルキルエーテル硫酸
塩などを含む陰イオン界面活性剤や、ポリオキシエチレ
ンアルキルエーテル、ポリオキシ2級アルコールエーテ
ル、ポリオキシエチレンアルキルフェニルエーテルなど
を含む非イオン界面活性剤などが挙げられ、これらの界
面活性剤を1種または2種以上の混合物として使用する
こともできる。また界面活性剤を含む洗浄剤としては、
ガラス等の洗浄剤として一般に市販されているものを用
いても差し支えない。
In a further preferred method, showering with water is carried out after immersion in a hot alkaline aqueous solution or a detergent containing a heated surfactant for a predetermined time. Examples of the strongly alkaline compound used in this method include NaOH,
Examples thereof include KOH and Ca (OH) 2 . Further, the surfactant is preferably a non-phosphoric acid type which does not cause pollution of waste water. Examples of these include alkylbenzene sulfonate, alkylnaphthalene sulfonate,
Anionic surfactants containing higher alcohol sulfate ester salts, alkyl ether sulfates, etc., and nonionic surfactants containing polyoxyethylene alkyl ethers, polyoxy secondary alcohol ethers, polyoxyethylene alkylphenyl ethers, etc. It is also possible to use one of these surfactants or a mixture of two or more thereof. Further, as a cleaning agent containing a surfactant,
As a cleaning agent for glass or the like, a commercially available one may be used.

【0017】本実施例で使用した洗浄テスト用基板サン
プルは次のようなものである。旭化成工業株式会社製ニ
トロセルロース(商品名「HIG−1」)の1wt%メ
チルイソブチルケトン溶液を石英ガラス基板上に滴下
し、スピンコ−ト法により0.1μmの厚さのニトロセ
ルロ−ス層を形成した。これを含フッ素樹脂薄膜の製膜
用基板とし、その上に旭硝子株式会社製の商品名「CT
−solv.160」を溶媒とする同社製の含フッ素樹
脂(商品名「CYTOP])(極限粘度=0.34)の
7wt%溶液を滴下して、同じくスピンコート法により
約0.8μmの含フッ素樹脂薄膜を製膜したのち乾燥
し、表面の膜を剥離したものである。
The cleaning test substrate sample used in this example is as follows. A 1 wt% methyl isobutyl ketone solution of nitrocellulose (trade name "HIG-1") manufactured by Asahi Kasei Kogyo Co., Ltd. was dropped on a quartz glass substrate to form a nitrocellulose layer having a thickness of 0.1 µm by a spin coat method. did. This is used as a substrate for the production of a fluorine-containing resin thin film, and the product name "CT of Asahi Glass Co., Ltd.
-Solv. A fluorine-containing resin thin film of about 0.8 μm was similarly dropped by a spin coating method using a 7 wt% solution of a fluorine-containing resin (trade name “CYTOP]) (intrinsic viscosity = 0.34) manufactured by the same company using 160” as a solvent. Is formed and then dried, and the film on the surface is peeled off.

【0018】実施例1 3%のNaOH水溶液を70℃に加熱し、洗浄テスト用
基板サンプルを浸漬した。30分経過後引き上げ、水で
濯いだ後、膜の剥離具合いを点検した。その結果、基板
エッジ部の含フッ素樹脂の残部や表面の下地層の除去に
効果が見られた。
Example 1 A 3% NaOH aqueous solution was heated to 70 ° C. to immerse a cleaning test substrate sample. After 30 minutes, the film was pulled up and rinsed with water, and then the peeling condition of the film was checked. As a result, it was found that the remaining part of the fluorine-containing resin at the edge of the substrate and the underlayer on the surface were effectively removed.

【0019】ここで膜の剥離具合いの点検は、基板のエ
ッジ部や裏面に付着した含フッ素樹脂の残部について
は、住友スリーエム株式会社製のメンディングテープ
(商品名「スコッチ」)を用いて、エッジ部や裏面の含
フッ素樹脂残を剥離し、テープに付着した量を調べるこ
とにより行い、また基板表面の下地層に関しては、暗所
でライトを基板表面に当て、その反射光を見ることで除
去状態を調べることにより行った。
Here, for the inspection of the peeling condition of the film, for the remaining portion of the fluorine-containing resin adhered to the edge portion and the back surface of the substrate, a mending tape (trade name "Scotch") manufactured by Sumitomo 3M Ltd. was used. It is performed by peeling off the fluorine-containing resin residue on the edge and the back surface and checking the amount attached to the tape.For the base layer on the substrate surface, apply a light to the substrate surface in the dark and see the reflected light. This was done by checking the removal state.

【0020】実施例2 浸漬時間を5分に短縮する以外は、実施例1と同様の方
法でテストを行った。 実施例3 3%のNaOH水溶液を80℃に加熱する以外は、実施
例2と同様の方法で洗浄を行った。その結果、基板エッ
ジ部の含フッ素樹脂の残部や表面の下地層の除去の程度
は実施例2より大きかった。
Example 2 A test was conducted in the same manner as in Example 1 except that the immersion time was shortened to 5 minutes. Example 3 Washing was performed in the same manner as in Example 2 except that a 3% NaOH aqueous solution was heated to 80 ° C. As a result, the degree of removal of the remaining portion of the fluorine-containing resin on the edge portion of the substrate and the underlying layer on the surface was greater than in Example 2.

【0021】実施例4 1%のNaOH水溶液を図1に示すように、タンク1内
に入れて70℃に加熱し、ポンプ7により毎分50リッ
トルで循環させて水溶液中に浸漬した基板4の一側端面
に吹付けた。5分経過後引き上げ、水で濯いだ後、膜の
剥離具合いを点検した。その結果、基板エッジ部の含フ
ッ素樹脂の残部や表面の下地層の大部分が除去されてい
た。
Example 4 As shown in FIG. 1, a 1% NaOH aqueous solution was placed in a tank 1, heated to 70 ° C., circulated at a rate of 50 liters per minute by a pump 7, and immersed in the aqueous solution of the substrate 4. Sprayed on one end face. After 5 minutes, it was pulled up and rinsed with water, and then the peeling condition of the film was checked. As a result, the rest of the fluorine-containing resin at the edge of the substrate and most of the underlying layer on the surface were removed.

【0022】実施例5 3%のNaOH水溶液を用いる以外は、実施例4と同じ
条件で洗浄を行った。その結果、基板エッジ部の含フッ
素樹脂の残部や表面の下地層の除去の程度は実施例4よ
り大きかった。 実施例6 NaOH水溶液の温度を80℃とする以外は実施例5と
同じ条件で洗浄を行った。その結果、基板エッジ部の含
フッ素樹脂の残部や表面の下地層の除去の程度は実施例
5より大きかった。
Example 5 Washing was performed under the same conditions as in Example 4 except that a 3% NaOH aqueous solution was used. As a result, the degree of removal of the remaining portion of the fluorine-containing resin at the edge portion of the substrate and the underlayer on the surface was greater than in Example 4. Example 6 Washing was performed under the same conditions as in Example 5 except that the temperature of the aqueous NaOH solution was 80 ° C. As a result, the degree of removal of the remaining portion of the fluorine-containing resin at the edge of the substrate and the underlayer on the surface was greater than in Example 5.

【0023】実施例7 浸漬後、1分間水によるシャワーリングを行う以外は、
実施例6と同じ条件で洗浄を行った。その結果、基板エ
ッジ部の含フッ素樹脂の残部や表面の下地層はほぼ完全
に除去されていた。 実施例8 3%のNaOH水溶液の温度を80℃とし、液の循環吹
付けを行わず、シャープ株式会社製超音波洗浄装置(商
品名[UTー304F])を用いて超音波洗浄を行っ
た。その結果、実施例6と同程度の効果が見られた。
Example 7 After immersion, showering with water was carried out for 1 minute, except that
Washing was performed under the same conditions as in Example 6. As a result, the remaining portion of the fluorine-containing resin at the edge of the substrate and the underlying layer on the surface were almost completely removed. Example 8 The temperature of a 3% NaOH aqueous solution was set to 80 ° C., and the ultrasonic cleaning was performed using an ultrasonic cleaning device (trade name [UT-304F] manufactured by Sharp Corporation) without spraying the liquid. . As a result, the same effect as in Example 6 was found.

【0024】実施例9 洗浄液として界面活性剤を含む洗浄剤(昭光通商株式会
社製の洗剤、商品名「ヒカリエースS」)を用いる以外
は実施例7と同じ条件でテストを行った。その結果、実
施例7と同程度の効果が見られた。 実施例10 実施例6の方法で洗浄した基板を、更に100℃に加熱
した硫酸中に10分間浸漬し、その後水洗した。そして
純水中で10分間超音波洗浄を行い、最後にIPA蒸気
で洗浄乾燥した。洗浄後の基板を暗所で基板表面にライ
トを当て観察したところ、再使用するのに支障の出るよ
うな汚れは全く見られなかった。
Example 9 A test was conducted under the same conditions as in Example 7 except that a detergent containing a surfactant (detergent manufactured by Shoko Tsusho Co., Ltd., trade name "Hikari Ace S") was used as the washing liquid. As a result, the same effect as in Example 7 was observed. Example 10 The substrate washed by the method of Example 6 was further immersed in sulfuric acid heated to 100 ° C. for 10 minutes, and then washed with water. Then, ultrasonic cleaning was performed in pure water for 10 minutes, and finally, cleaning and drying was performed with IPA vapor. When the washed substrate was observed by applying a light to the surface of the substrate in a dark place, no stain that could hinder its reuse was observed.

【0025】実施例11 洗浄液として界面活性剤を含む洗浄剤(昭光通商株式会
社製の洗剤、商品名「ヒカリエースS」)を用いる以外
は実施例6と同じ条件で洗浄した基板を、実施例9と同
様に、更に100℃に加熱した硫酸中に10分間浸漬
し、その後水洗いした。そして純水中で10分間超音波
洗浄を行い、最後にIPA蒸気で洗浄乾燥した。洗浄後
の基板を暗所で基板表面にライトを当て観察したとこ
ろ、再使用するのに支障の出るような汚れは全く見られ
なかった。
Example 11 A substrate washed under the same conditions as in Example 6 except that a detergent containing a surfactant (detergent manufactured by Shoko Tsusho Co., Ltd., trade name "Hikari Ace S") was used as the washing liquid was used. In the same manner as in No. 9, it was further immersed in sulfuric acid heated to 100 ° C. for 10 minutes, and then washed with water. Then, ultrasonic cleaning was performed in pure water for 10 minutes, and finally, cleaning and drying was performed with IPA vapor. When the washed substrate was observed by applying a light to the surface of the substrate in a dark place, no stain that could hinder its reuse was observed.

【0026】比較例1 80℃の熱水を用い、浸漬時間を30分とする以外は実
施例7と同じ条件で洗浄を行った。その結果、基板エッ
ジ部の含フッ素樹脂の残部や表面の下地層はほとんど除
去されていなかった。 比較例2 洗浄テスト用基板サンプルを、硫酸中に10分間浸漬
し、その後水洗した。更に純水中で10分間超音波洗浄
を行い、最後にIPA蒸気で洗浄乾燥した。洗浄後の基
板を調べたところ、エッジ部や裏面に付着していた含フ
ッ素樹脂はほとんど除去されておらず、基板表面には、
スジ状のシミが多数観察された。
Comparative Example 1 Washing was performed under the same conditions as in Example 7 except that hot water of 80 ° C. was used and the immersion time was 30 minutes. As a result, the remaining portion of the fluorine-containing resin at the edge of the substrate and the underlying layer on the surface were hardly removed. Comparative Example 2 The substrate sample for cleaning test was immersed in sulfuric acid for 10 minutes and then washed with water. Further, ultrasonic cleaning was performed in pure water for 10 minutes, and finally, cleaning and drying were performed with IPA vapor. When the substrate after cleaning was examined, the fluorine-containing resin adhering to the edge portion and the back surface was hardly removed, and
Many streaky spots were observed.

【0027】以上の結果を表1に示す。The above results are shown in Table 1.

【0028】[0028]

【表1】 [Table 1]

【0029】[0029]

【発明の効果】本発明は、以上のように構成され、次の
ような効果を奏する。含フッ素樹脂薄膜を製造するため
に用いた基板を70℃以上の熱アルカリ水溶液又は加熱
された界面活性剤を含む洗浄剤に浸漬すれば、基板のエ
ッジ部や裏面に付着した含フッ素樹脂の残部や下地層を
剥離除去するのに効果がある。
The present invention is constructed as described above and has the following effects. If the substrate used for producing the fluorine-containing resin thin film is immersed in a hot alkaline aqueous solution at 70 ° C. or higher or a detergent containing a heated surfactant, the remaining portion of the fluorine-containing resin adhered to the edge portion or the back surface of the substrate It is effective for peeling and removing the underlayer.

【0030】また浸漬時に超音波洗浄や、洗浄剤を強制
循環させて基板に吹付けるようにすれば、より効果が上
がる。また洗浄剤の吹付け時、多数の吹き出し口を備え
たヘッダーを有する治具を用いれば、基板への液の吹付
けが均一に行われ、より効果が上がる。また、熱アルカ
リ水溶液または加熱された界面活性剤を含む洗浄剤への
浸漬後、水によるシャワーリングを行えば、剥離除去効
果が一層向上する。
Further, if the ultrasonic cleaning or the cleaning agent is forcedly circulated and sprayed on the substrate during the immersion, the effect is further enhanced. Further, when the cleaning agent is sprayed, if a jig having a header having a large number of outlets is used, the liquid is sprayed uniformly onto the substrate, and the effect is further enhanced. Further, the effect of peeling and removing can be further improved by performing showering with water after the immersion in the hot alkaline aqueous solution or the detergent containing the heated surfactant.

【図面の簡単な説明】[Brief description of drawings]

【図1】基板への吹き付け方法を示す概略図。FIG. 1 is a schematic diagram showing a method of spraying onto a substrate.

【図2】基板への別の吹き付け方法を示す概略図FIG. 2 is a schematic view showing another method of spraying onto a substrate.

【図3】基板への更に別の吹き付け方法を示す概略図FIG. 3 is a schematic view showing still another spraying method on the substrate.

【図4】図3に示す方法で用いられる治具の概略図4 is a schematic view of a jig used in the method shown in FIG.

【符号の説明】[Explanation of symbols]

1 ・・タンク 2 ・・洗浄液 3、5、6 ・・吹き付け管 1 ・ ・ Tank 2 ・ ・ Cleaning liquid 3, 5, 6 ・ ・ Spraying pipe

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】 含フッ素樹脂によるペリクルの薄膜を製
造するために用いた基板の洗浄方法において、上記基板
を熱アルカリ水溶液または加熱された界面活性剤を含む
洗浄剤に浸漬することを特長とする洗浄方法。
1. A method for cleaning a substrate used for producing a thin film of a pellicle made of a fluorine-containing resin, characterized in that the substrate is immersed in a hot alkaline aqueous solution or a heated detergent-containing cleaning agent. Cleaning method.
【請求項2】 浸漬時に超音波洗浄を行なう請求項1記
載の洗浄方法。
2. The cleaning method according to claim 1, wherein ultrasonic cleaning is performed during the immersion.
【請求項3】 含フッ素樹脂によるペリクルの薄膜を製
造するために用いた基板の洗浄方法において、基板を熱
アルカリ水溶液または加熱された界面活性剤を含む洗浄
剤に浸漬し、熱アルカリ水溶液または加熱された界面活
性剤を含む洗浄剤を基板に吹き付けることを特長とする
洗浄方法。
3. A method of cleaning a substrate used for producing a thin film of a pellicle made of a fluorine-containing resin, wherein the substrate is immersed in a hot alkaline aqueous solution or a cleaning agent containing a heated surfactant, and the hot alkaline aqueous solution or heating is performed. A cleaning method, which comprises spraying a cleaning agent containing the surface-active agent onto a substrate.
【請求項4】 アルカリ水溶液は、強アルカリ性化合物
を1wt%以上含むか又はPHが13以上である請求項
1または3記載の洗浄方法。
4. The cleaning method according to claim 1, wherein the alkaline aqueous solution contains 1 wt% or more of a strongly alkaline compound or PH is 13 or more.
【請求項5】 界面活性剤を含む洗浄剤は、界面活性剤
を1wt%以上含むことを特長とする請求項1または3
記載の洗浄方法。
5. The cleaning agent containing a surfactant contains the surfactant in an amount of 1 wt% or more.
The described cleaning method.
【請求項6】 浸漬並びに吹付けるアルカリ水溶液また
は界面活性剤を含む洗浄剤の温度は70℃以上である請
求項3ないし5のいづれかの請求項に記載の洗浄方法。
6. The cleaning method according to claim 3, wherein the temperature of the cleaning solution containing the alkaline aqueous solution or the surface active agent which is soaked and sprayed is 70 ° C. or higher.
【請求項7】 吹付けは、縦向きに浸漬した基板の下側
端面に下方より行なわれる請求項6記載の洗浄方法。
7. The cleaning method according to claim 6, wherein the spraying is performed from below on the lower end surface of the substrate immersed in the vertical direction.
【請求項8】 吹付けは、ヘッダーの上側面に吹き出し
口を備えた治具を用い、基板全面に均一に吹き付けられ
る請求項7記載の洗浄方法。
8. The cleaning method according to claim 7, wherein the spraying is carried out uniformly on the entire surface of the substrate by using a jig having an outlet on the upper surface of the header.
【請求項9】 浸漬後、水によるシャワーリングが行わ
れる請求項1又は3記載の洗浄方法。
9. The cleaning method according to claim 1, wherein showering with water is performed after the immersion.
JP4183295A 1995-02-28 1995-03-01 Cleaning method of substrate used for manufacturing pellicle film Pending JPH08298253A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4183295A JPH08298253A (en) 1995-02-28 1995-03-01 Cleaning method of substrate used for manufacturing pellicle film

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4000295 1995-02-28
JP7-40002 1995-02-28
JP4183295A JPH08298253A (en) 1995-02-28 1995-03-01 Cleaning method of substrate used for manufacturing pellicle film

Publications (1)

Publication Number Publication Date
JPH08298253A true JPH08298253A (en) 1996-11-12

Family

ID=26379416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4183295A Pending JPH08298253A (en) 1995-02-28 1995-03-01 Cleaning method of substrate used for manufacturing pellicle film

Country Status (1)

Country Link
JP (1) JPH08298253A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2004088735A1 (en) * 2003-03-31 2006-07-06 Hoya株式会社 Cleaning method, foreign matter removing method, cleaning device and cleaning liquid
CN104259132A (en) * 2014-07-29 2015-01-07 蓝思科技股份有限公司 Technology for cleaning sapphire wafer
CN104588370A (en) * 2014-11-26 2015-05-06 上海华力微电子有限公司 Method for removing pollution particles on photomask covering film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2004088735A1 (en) * 2003-03-31 2006-07-06 Hoya株式会社 Cleaning method, foreign matter removing method, cleaning device and cleaning liquid
JP4518409B2 (en) * 2003-03-31 2010-08-04 Hoya株式会社 Cleaning method
CN104259132A (en) * 2014-07-29 2015-01-07 蓝思科技股份有限公司 Technology for cleaning sapphire wafer
CN104588370A (en) * 2014-11-26 2015-05-06 上海华力微电子有限公司 Method for removing pollution particles on photomask covering film

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