CN111470471A - Substrate cutting method - Google Patents
Substrate cutting method Download PDFInfo
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- CN111470471A CN111470471A CN201910064659.6A CN201910064659A CN111470471A CN 111470471 A CN111470471 A CN 111470471A CN 201910064659 A CN201910064659 A CN 201910064659A CN 111470471 A CN111470471 A CN 111470471A
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- substrate
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- region
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0005—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same
- B81C99/001—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same for cutting, cleaving or grinding
Abstract
The application provides a substrate cutting method, which is used for cutting a substrate, wherein a functional area with a preset function is formed on the front surface of the substrate, and the substrate also has a region to be cut surrounding the functional area.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a substrate cutting method.
Background
In the field of semiconductor technology, especially in the field of emerging micro-electromechanical systems (MEMS), devices are very diverse in kind, and their principles are also different. Some devices require that the last sensitive layer be very fragile. Therefore, after the wafer manufacturing process of the device is completed, a cutting method which does not damage the sensitive layer of the device is required to separate the device, and laser cutting is generally adopted.
It should be noted that the above background description is only for the convenience of clear and complete description of the technical solutions of the present application and for the understanding of those skilled in the art. Such solutions are not considered to be known to the person skilled in the art merely because they have been set forth in the background section of the present application.
Disclosure of Invention
The inventors of the present application have found that the laser cutting process itself is very expensive and that process tuning is difficult, and different products often require different process parameters.
The embodiment of the application provides a substrate cutting method, which is characterized in that other etching processes except laser etching in a semiconductor process are used for etching a to-be-cut area of a substrate, so that only one part of the substrate is reserved in the transverse direction or the thickness direction of the to-be-cut area, the difficulty in cutting the substrate is reduced, and the cost of the cutting process is reduced.
According to an aspect of embodiments of the present application, there is provided a substrate cutting method for cutting a substrate, a front surface of the substrate being formed with a functional region having a predetermined function, the substrate further having a region to be cut surrounding the functional region, the method including:
etching the area to be cut to a first depth from the front side of the area to be cut; and
and etching the substrate from the back side of the substrate, simultaneously etching off the substrate from the back side of the functional region and etching the substrate from the back side of the region to be cut to a second depth, wherein the sum of the first depth and the second depth is less than the thickness of the substrate.
According to another aspect of the embodiment of the application, the thickness of the substrate with the residual thickness of the area to be cut is 50-100 micrometers.
According to another aspect of the embodiment of the present application, wherein a lateral dimension of the functional region in a direction parallel to the front surface of the substrate is larger than a lateral dimension of the region to be cut in a direction parallel to the front surface of the substrate.
According to another aspect of the embodiment of the application, the first depth etched from the front surface of the to-be-cut area is determined according to the ratio of the etching speed of the substrate on the back surface of the functional area to the etching speed of the back surface of the to-be-cut area and the thickness of the substrate with the residual thickness of the to-be-cut area.
According to another aspect of embodiments of the present application, there is provided a substrate cutting method for cutting a substrate, the front surface of the substrate being formed with a functional region having a predetermined function, the substrate further having a region to be cut surrounding the functional region, a passivation layer being formed between the functional region and the front surface of the substrate, the method including:
and etching a part of the area to be cut and the substrate on the back of the functional area from the back of the substrate, wherein the part of the area to be cut is completely etched.
According to another aspect of the embodiments of the present application, wherein a minimum value of a lateral dimension of the portion of the region to be cut that is not etched is smaller than a width of the cutting region.
According to another aspect of the embodiment of the application, the minimum value of the transverse dimension of the unetched part of the area to be cut is 30-50 microns.
According to another aspect of the embodiment of the application, in the length direction of the area to be cut, the unetched parts and the carved parts of the area to be cut are alternately distributed.
According to another aspect of the embodiments of the present application, wherein the substrate cutting method further comprises:
and cutting off the reserved substrate of the area to be cut so as to separate the adjacent functional areas from each other.
The beneficial effect of this application lies in: the area to be cut of the substrate is etched by using other etching processes except laser etching in the semiconductor process, so that only one part of the substrate is reserved in the transverse direction or the thickness direction of the area to be cut, the difficulty in cutting the substrate is reduced, and the cost of the cutting process is reduced.
Specific embodiments of the present application are disclosed in detail with reference to the following description and drawings, indicating the manner in which the principles of the application may be employed. It should be understood that the embodiments of the present application are not so limited in scope. The embodiments of the application include many variations, modifications and equivalents within the spirit and scope of the appended claims.
Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments, in combination with or instead of the features of the other embodiments.
It should be emphasized that the term "comprises/comprising" when used herein, is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps or components.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the application, are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is obvious that the drawings in the following description are only some embodiments of the application, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. In the drawings:
fig. 1 is a schematic view of the front surface of the substrate of the present embodiment;
FIG. 2 is a schematic cross-sectional view in the thickness direction of the substrate of the present embodiment;
FIG. 3 is a schematic view of a substrate cutting method according to the present embodiment;
FIG. 4 is a schematic cross-sectional view of the substrate after processing in step 301;
FIG. 5 is a schematic view of the cross-section after step 302;
FIG. 6 is another schematic view of the substrate cutting method of the present embodiment
FIG. 7 is a schematic view of the unetched and etched-through portions of the region to be cut after the processing of step 601;
FIG. 8 is another schematic view of the unetched and etched-through portions of the region to be cut after the processing of step 601;
fig. 9 is a schematic cross-sectional view of the substrate after step 601.
Detailed Description
The foregoing and other features of the present application will become apparent from the following description, taken in conjunction with the accompanying drawings. In the description and drawings, particular embodiments of the application are disclosed in detail as being indicative of some of the embodiments in which the principles of the application may be employed, it being understood that the application is not limited to the described embodiments, but, on the contrary, is intended to cover all modifications, variations, and equivalents falling within the scope of the appended claims.
In the description of the embodiments of the present application, a direction parallel to the surface of the substrate is referred to as "lateral direction" and a direction perpendicular to the surface of the substrate is referred to as "longitudinal direction" for convenience of description, wherein the "thickness" of each component means a dimension of the component in the "longitudinal direction".
Example 1
The embodiment of the application provides a substrate cutting method. The substrate cutting method is used for cutting a substrate.
Fig. 1 is a schematic view of the front surface of the substrate of the present embodiment, and fig. 2 is a schematic view of a cross section in the thickness direction of the substrate of the present embodiment. As shown in fig. 1 and 2, the substrate 100 is formed with a functional region 101 having a predetermined function, and a region to be cut 102 surrounding the functional region 101.
In the present embodiment, the functional region 101 may be a region having a micro-mechanical structure or a circuit structure. In the functional region 101, the predetermined function is distinguished due to the difference in the micro-mechanical structure or the circuit structure. In one embodiment, the functional region 101 can have the structure of an infrared thermopile, for example.
In the present embodiment, the region to be cut 102 may be in a narrow and long shape, i.e., extending along the length direction L, and thus, may also be referred to as a cutting street region.
Fig. 3 is a schematic view of the substrate cutting method of the present embodiment, and as shown in fig. 3, the substrate cutting method includes:
301, etching the area to be cut to a first depth from the front side of the area to be cut; and
In this embodiment, after the processing of steps 301 and 302, the remaining thickness of the substrate in the region to be cut is equal to the original thickness of the substrate minus the first depth minus the second depth. The thickness of the substrate having the remaining thickness of the region to be cut may be, for example, 50 to 100 micrometers, and thus, the substrate having the remaining thickness in the region to be cut may be broken using a chipping jig consistent with a laser cutting process, thereby separating adjacent functional regions from each other.
In this embodiment, both the front and back surfaces of the substrate may have an etching protection pattern formed in advance, for example, a photoresist or the like. The surface of the substrate exposed from the etching protection pattern is etched in step 301 or step 302, and the surface of the substrate covered with the etching protection pattern is not etched in step 301 or step 302.
In this embodiment, the etching in step 301 and the etching in step 302 may adopt other etching methods different from laser etching, for example, wet etching using an etchant, or Reactive Ion Etching (RIE), or the like.
The first depth of the etch of step 301 may be, for example, 20 microns.
In this embodiment, a lateral dimension L1 of the functional region 101 in a direction parallel to the front surface of the substrate may be greater than a lateral dimension L2 of the to-be-cut region 102 in a direction parallel to the front surface of the substrate (as shown in fig. 1), so that when the substrate 100 on the back surface of the functional region 101 and the back surface of the to-be-cut region 102 are etched simultaneously in step 302, due to a load effect during etching, the etching speed of the substrate on the back surface of the functional region 101 is faster, and therefore, when the substrate 100 on the back surface of the functional region 101 is completely etched to completely release the functional region, the to-be-cut region 102 is etched only by a second depth, so that the substrate in the to-be-cut region 102 remains a certain thickness.
In this embodiment, the first depth of etching from the front surface of the region to be cut 102 may be determined according to the ratio of the etching speed of the substrate on the back surface of the functional region 101 to the etching speed of the back surface of the region to be cut 102, and the thickness of the substrate of the remaining thickness of the region to be cut 102, so that the substrate of the region to be cut 102 may have a certain remaining thickness after being processed through steps 301 and 302.
Fig. 4 is a schematic cross-sectional view of the substrate after processing at step 301, and fig. 5 is a schematic cross-sectional view after processing at step 302.
As shown in fig. 4, in step 301, the first depth H1 of the front etching of the region to be cut 102 is about 20 microns.
As shown in FIG. 5, after step 302, the substrate under the functional region 101 is completely etched, and the substrate with the second depth H2 on the back of the region to be cut 102 is etched, and the remaining thickness of the substrate is 50-100 μm.
Fig. 6 is another schematic view of the substrate cutting method of the present embodiment, and as shown in fig. 6, the substrate cutting method includes:
In this embodiment, after the processing of step 601, a partial region of the substrate in the to-be-cut region 102 in the transverse direction is etched through.
In the present embodiment, the minimum value of the lateral dimension of the non-etched portion of the region to be cut 102 may be smaller than the width of the cutting region (i.e., the width of the cutting track), for example, the minimum value of the lateral dimension of the non-etched portion of the region to be cut 102 is 30-50 micrometers. Accordingly, the lateral size of the remaining portion of the region to be cut 102 in the lateral direction is small, and thus, the remaining portion of the region to be cut 102 in the lateral direction can be broken using a chipping jig in accordance with the laser cutting process, thereby separating the adjacent functional regions 101 from each other.
In this embodiment, the back surface of the substrate may have an etching protection pattern formed in advance, for example, a photoresist. The surface of the substrate exposed from the etching protection pattern is etched in step 601, and the surface of the substrate covered with the etching protection pattern is not etched in step 601.
In this embodiment, the etching in step 601 may adopt other etching methods different from laser etching, for example, wet etching using an etchant, or Reactive Ion Etching (RIE), etc.
In step 601 of this embodiment, the substrate under the functional region 101 and the back surface of the region to be cut 102 are etched simultaneously, and although the etching rates of the two may not be the same, the portion of the region to be cut 102 exposed by the etching protection pattern can be completely etched through by properly prolonging the etching time. In addition, in order to avoid damage to the functional region 101 caused by etching, a passivation layer may be formed between the functional region 101 and the substrate to prevent damage to the functional region 101 caused by the etching process.
In the present embodiment, the unetched portions and the etched-through portions of the region to be cut 102 may be alternately distributed in the length direction of the region to be cut 102.
Fig. 7 is a schematic view of an unetched portion and a penetrated portion of the region to be cut 102 after the processing of step 601, and fig. 8 is another schematic view of an unetched portion and a penetrated portion of the region to be cut 102 after the processing of step 601.
As shown in fig. 7 and 8, the unetched parts 1021 and the etched-through parts 1022 of the area to be cut 102102 are alternately distributed in the length direction L of the area to be cut 102, in the present embodiment, the shape of the unetched parts 1021 is not the same in fig. 7 and 8, and in addition, the illustration in fig. 7 and 8 is only schematic, and the unetched parts 1021 may be in other shapes.
As shown in fig. 7 and 8, the smallest dimension d of the lateral dimensions of the unetched portion 1021 may be 30-50 microns.
Fig. 9 is a schematic cross-sectional view of the substrate after step 601. as shown in fig. 9, in the region 102 to be cut, a partial region 1022 of the substrate is etched through, i.e., from the lower surface to the upper surface of the substrate. The substrate under the functional region 101 is etched away.
In this embodiment, the region to be cut of the substrate is etched by using other etching processes except for laser etching in the semiconductor process, so that only a part of the substrate is reserved in the transverse direction or the thickness direction of the region to be cut, the difficulty in cutting the substrate is reduced, and the cost of the cutting process is reduced.
Therefore, the embodiment can avoid complex technological parameter debugging brought by laser cutting, more importantly, the cutting cost is greatly reduced, the main cutting work can be completed in the previous wafer factory, and one-stop service is provided.
The present application has been described in conjunction with specific embodiments, but it should be understood by those skilled in the art that these descriptions are intended to be illustrative, and not limiting. Various modifications and adaptations of the present application may occur to those skilled in the art based on the spirit and principles of the application and are within the scope of the application.
Claims (9)
1. A substrate cutting method for cutting a substrate, the front surface of which is formed with a functional region having a predetermined function, the substrate further having a region to be cut surrounding the functional region, the method comprising:
etching the area to be cut to a first depth from the front side of the area to be cut; and
and etching the substrate from the back side of the substrate, simultaneously etching off the substrate from the back side of the functional region and etching the substrate from the back side of the region to be cut to a second depth, wherein the sum of the first depth and the second depth is less than the thickness of the substrate.
2. The substrate cutting method according to claim 1,
the thickness of the substrate with the residual thickness of the area to be cut is 50-100 microns.
3. The substrate cutting method according to claim 1,
the lateral dimension of the functional region in a direction parallel to the front surface of the substrate is larger than the lateral dimension of the region to be cut in a direction parallel to the front surface of the substrate.
4. The substrate cutting method according to claim 3,
and determining the first depth for etching from the front side of the to-be-cut area according to the ratio of the etching speed of the substrate on the back side of the functional area to the etching speed of the back side of the to-be-cut area and the thickness of the substrate with the residual thickness of the to-be-cut area.
5. A substrate cutting method for cutting a substrate, the front surface of the substrate being formed with a functional region having a predetermined function, the substrate further having a region to be cut surrounding the functional region, a passivation layer being formed between the functional region and the front surface of the substrate, the method comprising:
and etching a part of the area to be cut and the substrate on the back of the functional area from the back of the substrate, wherein the part of the area to be cut is completely etched.
6. The substrate cutting method according to claim 5,
the minimum value of the lateral dimension of the unetched part of the area to be cut is smaller than the width of the cutting area.
7. The substrate cutting method according to claim 6,
the minimum value of the transverse dimension of the part, which is not etched, of the area to be cut is 30-50 microns.
8. The substrate cutting method according to claim 5,
in the length direction of the area to be cut, the unetched parts and the carved parts of the area to be cut are alternately distributed.
9. The substrate cutting method according to any one of claims 1 to 8, wherein the substrate cutting method further comprises:
and cutting off the reserved substrate of the area to be cut so as to separate the adjacent functional areas from each other.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910064659.6A CN111470471A (en) | 2019-01-23 | 2019-01-23 | Substrate cutting method |
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| CN201910064659.6A CN111470471A (en) | 2019-01-23 | 2019-01-23 | Substrate cutting method |
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| CN205752133U (en) * | 2016-01-11 | 2016-11-30 | 亚昕科技股份有限公司 | The chip architecture of sliver can be rolled easily |
| CN108777251A (en) * | 2018-06-07 | 2018-11-09 | 京东方科技集团股份有限公司 | Flexible substrates, the cutting method of display base plate motherboard, display base plate, device |
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2019
- 2019-01-23 CN CN201910064659.6A patent/CN111470471A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101026125A (en) * | 2006-02-21 | 2007-08-29 | 探微科技股份有限公司 | Wafer cutting method |
| CN101279403A (en) * | 2007-04-06 | 2008-10-08 | 富士迈半导体精密工业（上海）有限公司 | Laser processing method |
| CN102775051A (en) * | 2012-06-13 | 2012-11-14 | 北京工业大学 | Glass cutting method |
| CN106029287A (en) * | 2013-12-17 | 2016-10-12 | 康宁股份有限公司 | Method of laser cutting sapphire substrate by lasers and an article comprising sapphire with edge having series of defects |
| JP5780351B1 (en) * | 2014-11-06 | 2015-09-16 | 富士ゼロックス株式会社 | Manufacturing method of semiconductor piece |
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