CN111455460A - 一种金属砷单晶的制备方法 - Google Patents
一种金属砷单晶的制备方法 Download PDFInfo
- Publication number
- CN111455460A CN111455460A CN202010285916.1A CN202010285916A CN111455460A CN 111455460 A CN111455460 A CN 111455460A CN 202010285916 A CN202010285916 A CN 202010285916A CN 111455460 A CN111455460 A CN 111455460A
- Authority
- CN
- China
- Prior art keywords
- arsenic
- single crystal
- metal arsenic
- iodine
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052785 arsenic Inorganic materials 0.000 title claims abstract description 76
- 239000013078 crystal Substances 0.000 title claims abstract description 76
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 50
- 239000002184 metal Substances 0.000 title claims abstract description 50
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 238000006243 chemical reaction Methods 0.000 claims abstract description 38
- 238000002425 crystallisation Methods 0.000 claims abstract description 32
- 230000008025 crystallization Effects 0.000 claims abstract description 32
- 238000009833 condensation Methods 0.000 claims abstract description 26
- 230000005494 condensation Effects 0.000 claims abstract description 26
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052740 iodine Inorganic materials 0.000 claims abstract description 19
- 239000011630 iodine Substances 0.000 claims abstract description 19
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 16
- IKIBSPLDJGAHPX-UHFFFAOYSA-N arsenic triiodide Chemical compound I[As](I)I IKIBSPLDJGAHPX-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000003750 conditioning effect Effects 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000002156 mixing Methods 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000001301 oxygen Substances 0.000 claims abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 5
- 239000000126 substance Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000010453 quartz Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- OCVXZQOKBHXGRU-UHFFFAOYSA-N iodine(1+) Chemical compound [I+] OCVXZQOKBHXGRU-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000012153 distilled water Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 238000011084 recovery Methods 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 2
- 230000035484 reaction time Effects 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims 2
- 238000001035 drying Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 abstract description 7
- 238000007254 oxidation reaction Methods 0.000 abstract description 7
- 238000003860 storage Methods 0.000 abstract description 3
- LULLIKNODDLMDQ-UHFFFAOYSA-N arsenic(3+) Chemical compound [As+3] LULLIKNODDLMDQ-UHFFFAOYSA-N 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000000859 sublimation Methods 0.000 description 4
- 230000008022 sublimation Effects 0.000 description 4
- 238000010791 quenching Methods 0.000 description 3
- 230000000171 quenching effect Effects 0.000 description 3
- 238000005496 tempering Methods 0.000 description 3
- GOLCXWYRSKYTSP-UHFFFAOYSA-N arsenic trioxide Inorganic materials O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 229960002594 arsenic trioxide Drugs 0.000 description 1
- 239000002981 blocking agent Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- KTTMEOWBIWLMSE-UHFFFAOYSA-N diarsenic trioxide Chemical compound O1[As](O2)O[As]3O[As]1O[As]2O3 KTTMEOWBIWLMSE-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN202010285916.1A CN111455460B (zh) | 2020-04-13 | 2020-04-13 | 一种金属砷单晶的制备方法 |
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CN202010285916.1A CN111455460B (zh) | 2020-04-13 | 2020-04-13 | 一种金属砷单晶的制备方法 |
Publications (2)
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CN111455460A true CN111455460A (zh) | 2020-07-28 |
CN111455460B CN111455460B (zh) | 2021-03-23 |
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Family Applications (1)
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Country Status (1)
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112030224A (zh) * | 2020-09-03 | 2020-12-04 | 武汉拓材科技有限公司 | 一种分子束外延用砷棒的制作方法 |
CN113265703A (zh) * | 2021-04-28 | 2021-08-17 | 中南大学 | 一种金属砷晶体脱碘方法 |
CN113481597A (zh) * | 2021-07-07 | 2021-10-08 | 中南大学 | 一种Zn-P-As单晶的制备方法 |
CN113481598A (zh) * | 2021-07-07 | 2021-10-08 | 中南大学 | 一种Zn-P-As晶体材料及其制备方法和应用 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10259100A (ja) * | 1997-03-18 | 1998-09-29 | Japan Energy Corp | GaAs単結晶の製造方法 |
CN102899712A (zh) * | 2012-08-30 | 2013-01-30 | 东方电气集团峨嵋半导体材料有限公司 | 超高纯砷单晶体片的制备方法 |
CN110923457A (zh) * | 2019-12-27 | 2020-03-27 | 中国科学院电工研究所 | 一种高纯砷晶体的制备方法 |
-
2020
- 2020-04-13 CN CN202010285916.1A patent/CN111455460B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10259100A (ja) * | 1997-03-18 | 1998-09-29 | Japan Energy Corp | GaAs単結晶の製造方法 |
CN102899712A (zh) * | 2012-08-30 | 2013-01-30 | 东方电气集团峨嵋半导体材料有限公司 | 超高纯砷单晶体片的制备方法 |
CN110923457A (zh) * | 2019-12-27 | 2020-03-27 | 中国科学院电工研究所 | 一种高纯砷晶体的制备方法 |
Non-Patent Citations (1)
Title |
---|
C UHER,ET AL.: "Electrical resistivity of single crystal arsenic at very low temperatures", 《J. PHYS. F: MET. PHYS》 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112030224A (zh) * | 2020-09-03 | 2020-12-04 | 武汉拓材科技有限公司 | 一种分子束外延用砷棒的制作方法 |
CN113265703A (zh) * | 2021-04-28 | 2021-08-17 | 中南大学 | 一种金属砷晶体脱碘方法 |
CN113481597A (zh) * | 2021-07-07 | 2021-10-08 | 中南大学 | 一种Zn-P-As单晶的制备方法 |
CN113481598A (zh) * | 2021-07-07 | 2021-10-08 | 中南大学 | 一种Zn-P-As晶体材料及其制备方法和应用 |
CN113481598B (zh) * | 2021-07-07 | 2022-03-25 | 中南大学 | 一种Zn-P-As晶体材料及其制备方法和应用 |
CN113481597B (zh) * | 2021-07-07 | 2022-03-25 | 中南大学 | 一种Zn-P-As单晶的制备方法 |
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CN111455460B (zh) | 2021-03-23 |
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Effective date of registration: 20240428 Address after: Building G5-1, Lushan Science and Technology Innovation Park, No. 966 Lushan South Road, Science Village Community, Yuelu Street, Yuelu District, Changsha City, Hunan Province, 410006 Patentee after: New Engine (Changsha) Technology Development Co.,Ltd. Country or region after: China Address before: Yuelu District City, Hunan province 410083 Changsha Lushan Road No. 932 Patentee before: CENTRAL SOUTH University Country or region before: China |
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