CN111440675A - 一种新型环保硅晶片清洗试剂及其制备方法及其应用 - Google Patents
一种新型环保硅晶片清洗试剂及其制备方法及其应用 Download PDFInfo
- Publication number
- CN111440675A CN111440675A CN202010169150.0A CN202010169150A CN111440675A CN 111440675 A CN111440675 A CN 111440675A CN 202010169150 A CN202010169150 A CN 202010169150A CN 111440675 A CN111440675 A CN 111440675A
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- sodium
- cleaning reagent
- wafer cleaning
- ether
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 66
- 239000010703 silicon Substances 0.000 title claims abstract description 66
- 238000004140 cleaning Methods 0.000 title claims abstract description 50
- 239000003153 chemical reaction reagent Substances 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title claims description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 63
- 239000004115 Sodium Silicate Substances 0.000 claims abstract description 20
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052911 sodium silicate Inorganic materials 0.000 claims abstract description 20
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000008139 complexing agent Substances 0.000 claims abstract description 13
- 239000012153 distilled water Substances 0.000 claims abstract description 13
- 239000003995 emulsifying agent Substances 0.000 claims abstract description 13
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 7
- 230000000149 penetrating effect Effects 0.000 claims abstract description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 22
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 20
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 20
- -1 diethyl hexyl Chemical group 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 13
- 238000003756 stirring Methods 0.000 claims description 13
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 8
- DZCAZXAJPZCSCU-UHFFFAOYSA-K sodium nitrilotriacetate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CC([O-])=O DZCAZXAJPZCSCU-UHFFFAOYSA-K 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims description 5
- 238000001914 filtration Methods 0.000 claims description 5
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 claims description 5
- 238000005303 weighing Methods 0.000 claims description 5
- 239000003109 Disodium ethylene diamine tetraacetate Substances 0.000 claims description 4
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 4
- 235000019301 disodium ethylene diamine tetraacetate Nutrition 0.000 claims description 4
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- IMPJIGYFRNDTFT-UHFFFAOYSA-N P1(=O)OC(CO)OP(O1)=O.[Na] Chemical compound P1(=O)OC(CO)OP(O1)=O.[Na] IMPJIGYFRNDTFT-UHFFFAOYSA-N 0.000 claims description 2
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims description 2
- BCKXLBQYZLBQEK-KVVVOXFISA-M Sodium oleate Chemical compound [Na+].CCCCCCCC\C=C/CCCCCCCC([O-])=O BCKXLBQYZLBQEK-KVVVOXFISA-M 0.000 claims description 2
- KCYQMQGPYWZZNJ-BQYQJAHWSA-N hydron;2-[(e)-oct-1-enyl]butanedioate Chemical compound CCCCCC\C=C\C(C(O)=O)CC(O)=O KCYQMQGPYWZZNJ-BQYQJAHWSA-N 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 claims description 2
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 claims description 2
- 238000002791 soaking Methods 0.000 claims description 2
- 235000011006 sodium potassium tartrate Nutrition 0.000 claims description 2
- WYPBVHPKMJYUEO-NBTZWHCOSA-M sodium;(9z,12z)-octadeca-9,12-dienoate Chemical compound [Na+].CCCCC\C=C/C\C=C/CCCCCCCC([O-])=O WYPBVHPKMJYUEO-NBTZWHCOSA-M 0.000 claims description 2
- RLJSXMVTLMHXJS-UHFFFAOYSA-M sodium;4-decylbenzenesulfonate Chemical compound [Na+].CCCCCCCCCCC1=CC=C(S([O-])(=O)=O)C=C1 RLJSXMVTLMHXJS-UHFFFAOYSA-M 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 230000007613 environmental effect Effects 0.000 claims 6
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 claims 1
- ICCOTNFOZNKKAD-UHFFFAOYSA-M sodium 2-oxido-2-oxo-1,3,2lambda5-dioxaphosphinan-4-amine Chemical compound P1(=O)(OC(CCO1)N)[O-].[Na+] ICCOTNFOZNKKAD-UHFFFAOYSA-M 0.000 claims 1
- 239000001476 sodium potassium tartrate Substances 0.000 claims 1
- 229910052938 sodium sulfate Inorganic materials 0.000 claims 1
- 235000011152 sodium sulphate Nutrition 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 51
- 230000000694 effects Effects 0.000 description 14
- 239000000243 solution Substances 0.000 description 12
- 239000012459 cleaning agent Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 7
- 229910021645 metal ion Inorganic materials 0.000 description 7
- 239000003921 oil Substances 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 5
- YPOGAMDNDKPXIL-UHFFFAOYSA-M C(CCC(=O)[O-])(=O)OC=CCCCCCC.[K+] Chemical compound C(CCC(=O)[O-])(=O)OC=CCCCCCC.[K+] YPOGAMDNDKPXIL-UHFFFAOYSA-M 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000004576 sand Substances 0.000 description 3
- 239000011863 silicon-based powder Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 description 2
- 238000004945 emulsification Methods 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 239000008233 hard water Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000001488 sodium phosphate Substances 0.000 description 2
- 229910000162 sodium phosphate Inorganic materials 0.000 description 2
- AIMUHNZKNFEZSN-UHFFFAOYSA-M sodium;decane-1-sulfonate Chemical compound [Na+].CCCCCCCCCCS([O-])(=O)=O AIMUHNZKNFEZSN-UHFFFAOYSA-M 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- RNMDNPCBIKJCQP-UHFFFAOYSA-N 5-nonyl-7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-ol Chemical compound C(CCCCCCCC)C1=C2C(=C(C=C1)O)O2 RNMDNPCBIKJCQP-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000009920 chelation Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 1
- VAAKDLOTVZBUNR-UHFFFAOYSA-L disodium;3-ethyloctan-3-yl phosphate Chemical compound [Na+].[Na+].CCCCCC(CC)(CC)OP([O-])([O-])=O VAAKDLOTVZBUNR-UHFFFAOYSA-L 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 229960001484 edetic acid Drugs 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000001804 emulsifying effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 150000002191 fatty alcohols Chemical class 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229940074439 potassium sodium tartrate Drugs 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229940077386 sodium benzenesulfonate Drugs 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/83—Mixtures of non-ionic with anionic compounds
- C11D1/831—Mixtures of non-ionic with anionic compounds of sulfonates with ethers of polyoxyalkylenes without phosphates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/06—Phosphates, including polyphosphates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/08—Silicates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2082—Polycarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/33—Amino carboxylic acids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/007—Heating the liquid
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
- C11D1/22—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aromatic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Abstract
一种新型环保硅晶片清洗试剂及其制备方法及其应用,包括如下质量浓度的物质:氢氧化钾0.2‑1.0g/L;硅酸钠0.1‑0.8g/L;焦磷酸钾0.1‑1.0g/L;络合剂0.01‑0.1g/L;渗透剂0.05‑0.5g/L;乳化剂0.05‑0.5g/L;余量为蒸馏水。本发明的配方中不含有任何有机溶剂和氟离子表面活性剂,本发明所制备的清洗试剂特别适用于单晶硅、多晶硅等硅晶片的清洗,清洗表面均匀光洁,无任何花斑、砂粒、研磨料、金属离子及指纹等残留,通过滤纸擦拭,无任何硅粉等物质残留,能极好的满足客户生产需求,且该工艺环保,生产过程无任何有机溶剂添加,产品环保无污染。
Description
技术领域
本发明属于硅晶片清洗领域领域,具体地说是一种新型环保硅晶片清洗试剂及其制备方法及其应用。
背景技术
随着大规模集成电路的发展,集成度的不断提高,线宽的不断减小,对硅片的质量要求越来越高,特别是对硅抛光片的表面质量要求越来越严。这主要是因为抛光片表面的颗粒和金属杂质沾污会严重影响器件的质量和成品率。在硅晶体管和集成电路生产中,几乎每道工序都有硅片清洗的问题,硅片的好坏对器件性能有很严重的影响,处理不当,可能使硅片全部报废,做不出合格的产品,或者制造出来的产品性能低劣,稳定性和可靠性很差。
从硅材料到可使用的硅片要经过切片、倒角、研磨、表面处理、抛光、外延等不同工序,硅片加工采用多线切割技术,此过程中碳化硅磨料切割硅片,会在硅片表面形成砂粒、残留的切削磨料、指纹和金属离子污染。清洗的目的就是为了去除硅片表面颗粒、金属离子以及有机物等污染,使硅片表面达到无腐蚀氧化、无残留等技术指标。金属离子污染如铜、铁、锌等的残留会影响硅片表面后续氧化生成的栅极薄膜的质量,进而造成组件易漏电、成品率低、可靠性差。硅晶片表面氧化、指纹沾污也会影响光电转换效率。
传统清洗液,大多采用盐酸进行清洗,盐酸为强腐蚀性物质且气味大,使用过后的废液很难处理,导致环境污染,且只对硅晶片表面的金属离子和氧化层有一定效果,对颗粒物和有机成分去除效果差。
目前,市面上存在较多的为强碱液清洗剂,清洗效果较盐酸有明显改善,对颗粒物和有机成分有较好去除作用,但整体去除效果仍不能完全达到客户需求,而且用量过大,清洗效率低,废水排放加大。并且为了使表面活性剂能较好的分散在碱液中,引入了较大量的有机溶剂如乙醇、乙二醇、乙二醇丁醚、二乙二醇丁醚等,进行助溶和协助清洗,因此在生产过程中产生较大气味,有机溶剂排放会污染环境。
发明内容
本发明提供一种新型环保硅晶片清洗试剂及其制备方法及其应用,用以解决现有技术中的缺陷。
本发明通过以下技术方案予以实现:
一种新型环保硅晶片清洗试剂,包括如下质量浓度的物质:
氢氧化钾 0.2-1.0g/L;
硅酸钠 0.1-0.8g/L;
焦磷酸钾 0.1-1.0g/L;
络合剂 0.01-0.1g/L;
渗透剂 0.05-0.5g/L;
乳化剂 0.05-0.5g/L;
余量为蒸馏水。
如上所述的一种新型环保硅晶片清洗试剂,包括如下质量浓度的物质:
氢氧化钾 0.4-0.6g/L;
硅酸钠 0.2-0.5g/L;
焦磷酸钾 0.2-0.5g/L;
络合剂 0.03-0.06g/L;
渗透剂 0.1-0.3g/L;
乳化剂 0.1-0.3g/L;
余量为蒸馏水。
如上所述的一种新型环保硅晶片清洗试剂,所述的络合剂为乙二胺四乙酸二钠、氨三乙酸三钠、氨基三亚甲基磷酸钠、羟基乙叉二膦酸钠、酒石酸钾钠的其中任意一种或任意两种以上以任意比例的混合物。
如上所述的一种新型环保硅晶片清洗试剂,所述的渗透剂为直链辛基聚氧乙烯醚、直链壬基聚氧乙烯醚、直链癸基聚氧乙烯醚、直链辛基聚氧乙烯聚氧丙烯醚、直链壬基聚氧乙烯聚氧丙烯醚、直链癸基聚氧乙烯聚氧丙烯醚、支链二乙基己基聚氧乙烯醚、二乙基己基聚氧乙烯聚氧丙烯醚、二乙基己基硫酸酯钠、二乙基己基磷酸酯钠的其中任意一种或任意两种以上以任意比例的混合物。
如上所述的一种新型环保硅晶片清洗试剂,所述的乳化剂为十二烷基苯磺酸钠、癸基苯磺酸钠、十二烷基硫酸钠、十二烷基磺酸钠、油酸钠、亚油酸钠、月桂醇聚氧乙烯醚、月桂醇聚氧乙烯醚磷酸钠、壬基酚聚氧乙烯醚、辛基酚聚氧乙烯醚、辛烯基琥珀酸的其中任意一种或任意两种以上以任意比例的混合物。
如上所述的一种新型环保硅晶片清洗试剂,所述的pH为10-13。
如上所述的一种新型环保硅晶片清洗试剂,所述的pH为11-13。
一种新型环保硅晶片清洗试剂的制备方法,包括如下步骤:
步骤一:计算并称量取氢氧化钾、硅酸钠 、焦磷酸钾、络合剂、渗透剂、乳化剂;
步骤二:向反应釜中加入三分之二理论体积的蒸馏水,开启搅拌,加入所需氢氧化钾,搅拌至完全溶解;
步骤三:向反应釜中加入硅酸钠,焦磷酸钾,搅拌至完全溶解;
步骤四:加入络合剂、渗透剂、乳化剂,搅拌3-4h,至溶液澄清透明;
步骤五:按所需生产体积定容,再搅拌0.5h至充分混合均匀,过滤包装即产品。
一种新型环保硅晶片清洗试剂的应用,所述的清洗试剂在对硅晶片清洗时的温度为30-70℃;所述的清洗试剂的清洗时间为20-30min。
如上所述的一种新型环保硅晶片清洗试剂的制备方法,所述的清洗试剂在对硅晶片清洗时采用清洗试剂浸泡超声波振荡或清洗试剂喷淋的方式进行清洗。
本发明的优点是:
1、本发明的配方中不含有任何有机溶剂和氟离子表面活性剂,本发明所制备的清洗试剂特别适用于单晶硅、多晶硅等硅晶片的清洗,清洗表面均匀光洁,无任何花斑、砂粒、研磨料、金属离子及指纹等残留,通过滤纸擦拭,无任何硅粉等物质残留,能极好的满足客户生产需求,且该工艺环保,生产过程无任何有机溶剂添加,产品环保无污染;
2、本发明所使用的渗透剂,具有优异的分散渗透作用,能快速浸入油污与基材,达到快速剥离的效果和一定乳化效果,并且低泡环保;
3、本发明所使用的乳化剂,在极低的浓度下具有极其优异的乳化效果,能很好的乳化硅晶片表面的颗粒物和有机物,不伤底材;
4、本发明所使用的络合剂,能有效的络合硅晶片切割中残留的铜、铁、锌等金属离子,同时其环保易降解,不会污染环境;
5、本发明所使用的氢氧化钾,能给清洗环境提供一个良好的碱性环境,能够确保高效的清洗硅晶片;
6、本发明所使用的硅酸钠,对油污具有良好的乳化作用,硅酸钠在清洗硅片的过程中,氧原子的一端是憎水的,吸附时向着油,另一端时亲水的,吸附时向着水溶液。这种在油—水溶液界面吸附的结果,就使油—水溶液之间的界面张力比不加乳化剂的时候降低了。由于界面张力的降低,油与水溶解的接触面增大,油变成了一个个小油滴分散在水溶液中,从而去除;
7、本发明所使用焦磷酸钾,能和碱土金属和重金属离子发生螯合作用,能与硬水中的Ca2+、Mg2+形成稳定的络合物从而软化硬水、提高洗涤能力、清除污垢,焦磷酸根离子(P2O7 4-)对于微细分散的固体具有很强的分散能力,能促进细微、微量物质的均一混合,具有较好的辅助清洗效果。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作一简单地介绍,显而易见地,下面描述中的附图是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。
图1是本发明的实施例1的金相检测100X和1000X倍的效果对比图;
图2是本发明的实施例2的金相检测100X和1000X倍的效果对比图;
图3是本发明的对照例1的金相检测100X和1000X倍的效果对比图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例1
步骤一:计算并称量取0.5g氢氧化钾、 0.3g硅酸钠、 0.3g焦磷酸钾、0.02g氨三乙酸三钠、0.03g乙二胺四乙酸二钠、0.15g直链壬基聚氧乙烯聚氧丙烯、0.2g二乙基己基聚氧乙烯醚、0.15g癸苯磺酸钠、0.25g辛烯基琥珀酸钾;
步骤二:向2L容量瓶中加入666ml的蒸馏水,开启超声波发生器,加入所需氢氧化钾,超声振动至完全溶解;
步骤三:向2L容量瓶中加入硅酸钠,焦磷酸钾,超声振动至至完全溶解;
步骤四:向2L容量瓶中加入氨三乙酸三钠、乙二胺四乙酸二钠、直链壬基聚氧乙烯聚氧丙烯、二乙基己基聚氧乙烯醚、癸苯磺酸钠、辛烯基琥珀酸钾,超声振动4h,溶液澄清透明;
步骤五:按所需体积加入蒸馏水定容,再超声振动0.5h至充分混合均匀,过滤后得产品记为实施例1。
实施例2
步骤一:计算并称量取0.5g氢氧化钾、 0.3g硅酸钠、 0.3g焦磷酸钾、0.02g氨三乙酸三钠、0.03g乙二胺四乙酸二钠、0.15g直链壬基聚氧乙烯聚氧丙烯、0.15g壬基酚聚氧乙烯醚、0.2g二乙基己基聚氧乙烯醚、 0.12g十二烷基苯磺酸钠、0.25g辛烯基琥珀酸钾;
步骤二:向2L容量瓶中加入666ml的蒸馏水,开启超声波发生器,加入所需氢氧化钾,超声振动至完全溶解;
步骤三:向2L容量瓶中加入硅酸钠,焦磷酸钾,超声振动至至完全溶解;
步骤四:向2L容量瓶中加入氨三乙酸三钠、乙二胺四乙酸二钠、直链壬基聚氧乙烯聚氧丙烯、壬基酚聚氧乙烯醚、二乙基己基聚氧乙烯醚、 0十二烷基苯磺酸钠、辛烯基琥珀酸钾;
步骤五:按所需体积加入蒸馏水定容,再超声振动0.5h至充分混合均匀,过滤后得产品记为实施例2。
对照例1
步骤一:计算并称量取0.5g氢氧化钾、0.6g乙醇, 0.6g乙二醇丁醚、 0.02g氨三乙酸三钠、0.03g乙二胺四乙酸二钠、0.15g脂肪醇聚氧乙烯醚磷酸酯钠 、0.2g二乙基己基聚氧乙烯醚、 0.15g十二烷基苯磺酸钠、0.25g月桂醇聚氧乙烯醚;
步骤二:向2L容量瓶中加入三分之二理论体积的蒸馏水,开启搅拌,加入所需氢氧化钾,搅拌至完全溶解;
步骤三:向2L容量瓶中加入乙二醇丁醚、氨三乙酸三钠、乙二胺四乙酸二钠、脂肪醇聚氧乙烯醚磷酸酯钠 、二乙基己基聚氧乙烯醚、 十二烷基苯磺酸钠月桂醇聚氧乙烯醚,搅拌6h,溶液澄清透明;
步骤四:按所需体积加入蒸馏水定容,再超声振动0.5h至充分混合均匀,过滤后得产品记为对照例1。
性能验证
取污染状况近似的150片硅晶片,分别为三组,每组50片,分别放入三个超声清洗仪器中,分别加入实施例1、实施例2以及对照例1的产品,升温至55℃,超声振动清洗20min。
取出清洗后的硅晶片擦拭干净,随机选取各组数片硅晶片进行金相检测和滤纸刮擦检测。
通过图1-3的金相图对比,使用对照例1的产品清洗的硅晶片清洗后亮点更多,外观更偏灰白,均匀度相对偏差而使用实施例1和实施例2的产品清洗的硅晶片相对使用对照例1的产品清洗的硅晶片,使用实施例1和实施例2的产品清洗的硅晶表面更加均匀,色泽灰色一致,表面无任何残留和腐蚀现象。
采用中性滤纸,分别擦拭实施例1、实施例2和对照例1的产品清洗后的硅晶片。结果是:使用实施例1和实施例2的产品清洗的硅晶片中性滤纸擦拭后,滤纸表面均仍为白色,无任何硅粉及残渣显示;而使用对照例1的产品清洗的硅晶片,中性滤纸在擦拭后仍有有轻微灰色残留在滤纸上,清洗效果相对略差。
综上所述,本发明所生产的产品应用于硅晶片的清洗中时硅晶片清洗后表面均匀光洁,无任何花斑、砂粒、研磨料、金属离子及指纹等残留,通过滤纸擦拭,无任何硅粉等物质残留,能极好的满足客户生产需求,且该工艺环保,生产过程无任何有机溶剂添加,产品环保无污染。
最后应说明的是:以上实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。
Claims (10)
1.一种新型环保硅晶片清洗试剂,其特征在于:包括如下质量浓度的物质:
氢氧化钾 0.2-1.0g/L;
硅酸钠 0.1-0.8g/L;
焦磷酸钾 0.1-1.0g/L;
络合剂 0.01-0.1g/L;
渗透剂 0.05-0.5g/L;
乳化剂 0.05-0.5g/L;
余量为蒸馏水。
2.根据权利要求1所述的一种新型环保硅晶片清洗试剂,其特征在于:包括如下质量浓度的物质:
氢氧化钾 0.4-0.6g/L;
硅酸钠 0.2-0.5g/L;
焦磷酸钾 0.2-0.5g/L;
络合剂 0.03-0.06g/L;
渗透剂 0.1-0.3g/L;
乳化剂 0.1-0.3g/L;
余量为蒸馏水。
3.根据权利要求1所述的一种新型环保硅晶片清洗试剂,其特征在于:所述的络合剂为乙二胺四乙酸二钠、氨三乙酸三钠、氨基三亚甲基磷酸钠、羟基乙叉二膦酸钠、酒石酸钾钠的其中任意一种或任意两种以上以任意比例的混合物。
4.根据权利要求1所述的一种新型环保硅晶片清洗试剂,其特征在于:所述的渗透剂为直链辛基聚氧乙烯醚、直链壬基聚氧乙烯醚、直链癸基聚氧乙烯醚、直链辛基聚氧乙烯聚氧丙烯醚、直链壬基聚氧乙烯聚氧丙烯醚、直链癸基聚氧乙烯聚氧丙烯醚、支链二乙基己基聚氧乙烯醚、二乙基己基聚氧乙烯聚氧丙烯醚、二乙基己基硫酸酯钠、二乙基己基磷酸酯钠的其中任意一种或任意两种以上以任意比例的混合物。
5.根据权利要求1所述的一种新型环保硅晶片清洗试剂,其特征在于:所述的乳化剂为十二烷基苯磺酸钠、癸基苯磺酸钠、十二烷基硫酸钠、十二烷基磺酸钠、油酸钠、亚油酸钠、月桂醇聚氧乙烯醚、月桂醇聚氧乙烯醚磷酸钠、壬基酚聚氧乙烯醚、辛基酚聚氧乙烯醚、辛烯基琥珀酸的其中任意一种或任意两种以上以任意比例的混合物。
6.根据权利要求1所述的一种新型环保硅晶片清洗试剂,其特征在于:所述的pH为10-13。
7.根据权利要求6所述的一种新型环保硅晶片清洗试剂,其特征在于:所述的pH为11-13。
8.一种新型环保硅晶片清洗试剂的制备方法,其特征在于:包括如下步骤:
步骤一:计算并称量取氢氧化钾、硅酸钠 、焦磷酸钾、络合剂、渗透剂、乳化剂;
步骤二:向反应釜中加入三分之二理论体积的蒸馏水,开启搅拌,加入所需氢氧化钾,搅拌至完全溶解;
步骤三:向反应釜中加入硅酸钠,焦磷酸钾,搅拌至完全溶解;
步骤四:加入络合剂、渗透剂、乳化剂,搅拌3-4h,至溶液澄清透明;
步骤五:按所需生产体积定容,再搅拌0.5h至充分混合均匀,过滤包装即产品。
9.一种新型环保硅晶片清洗试剂的应用,其特征在于:所述的清洗试剂在对硅晶片清洗时的温度为30-70℃;所述的清洗试剂的清洗时间为20-30min。
10.根据权利要求9所述的一种新型环保硅晶片清洗试剂的制备方法,其特征在于:所述的清洗试剂在对硅晶片清洗时采用清洗试剂浸泡超声波振荡或清洗试剂喷淋的方式进行清洗。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010169150.0A CN111440675A (zh) | 2020-03-12 | 2020-03-12 | 一种新型环保硅晶片清洗试剂及其制备方法及其应用 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010169150.0A CN111440675A (zh) | 2020-03-12 | 2020-03-12 | 一种新型环保硅晶片清洗试剂及其制备方法及其应用 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN111440675A true CN111440675A (zh) | 2020-07-24 |
Family
ID=71650553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010169150.0A Pending CN111440675A (zh) | 2020-03-12 | 2020-03-12 | 一种新型环保硅晶片清洗试剂及其制备方法及其应用 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111440675A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115287125A (zh) * | 2022-06-15 | 2022-11-04 | 湖北三赢兴光电科技股份有限公司 | 一种感光芯片清洗液及其制备方法和应用 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101314750A (zh) * | 2008-06-13 | 2008-12-03 | 唐玉冰 | 硅片清洗剂及其制备方法 |
CN101602984A (zh) * | 2008-06-13 | 2009-12-16 | 唐玉冰 | 一种硅片清洗剂的制备方法 |
WO2013070499A1 (en) * | 2011-11-08 | 2013-05-16 | Dynaloy, Llc | Photoresist and post etch residue cleaning solution |
KR20140018521A (ko) * | 2012-08-02 | 2014-02-13 | 동우 화인켐 주식회사 | 잉곳 절삭 공정용 웨이퍼 세정제 조성물 |
CN110575995A (zh) * | 2019-09-26 | 2019-12-17 | 南通晶耀新能源有限公司 | 一种用于清洗太阳能单晶硅片的清洗工艺 |
CN110804738A (zh) * | 2019-11-12 | 2020-02-18 | 宁波际超新材料科技有限公司 | 一种高效脱脂剂及生产方法 |
-
2020
- 2020-03-12 CN CN202010169150.0A patent/CN111440675A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101314750A (zh) * | 2008-06-13 | 2008-12-03 | 唐玉冰 | 硅片清洗剂及其制备方法 |
CN101602984A (zh) * | 2008-06-13 | 2009-12-16 | 唐玉冰 | 一种硅片清洗剂的制备方法 |
WO2013070499A1 (en) * | 2011-11-08 | 2013-05-16 | Dynaloy, Llc | Photoresist and post etch residue cleaning solution |
KR20140018521A (ko) * | 2012-08-02 | 2014-02-13 | 동우 화인켐 주식회사 | 잉곳 절삭 공정용 웨이퍼 세정제 조성물 |
CN110575995A (zh) * | 2019-09-26 | 2019-12-17 | 南通晶耀新能源有限公司 | 一种用于清洗太阳能单晶硅片的清洗工艺 |
CN110804738A (zh) * | 2019-11-12 | 2020-02-18 | 宁波际超新材料科技有限公司 | 一种高效脱脂剂及生产方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115287125A (zh) * | 2022-06-15 | 2022-11-04 | 湖北三赢兴光电科技股份有限公司 | 一种感光芯片清洗液及其制备方法和应用 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102660409B (zh) | 光伏电池硅片清洗剂及其制备方法 | |
CN109576077B (zh) | 光学玻璃清洗剂 | |
CN1420161A (zh) | 基片表面洗净液及洗净方法 | |
CN113186539B (zh) | 一种化学机械抛光后清洗液及其制备方法 | |
JP2008182188A (ja) | 電子材料用洗浄液および洗浄方法 | |
KR101956388B1 (ko) | 사파이어 웨이퍼 세정제 조성물 | |
CN102230210A (zh) | 一种不锈钢无铬电解抛光液及其表面抛光处理工艺 | |
CN102304444A (zh) | 环保型太阳能级硅片水基清洗剂 | |
CN101250465B (zh) | 一种导电玻璃基板清洗剂及其制备方法 | |
CN112592771A (zh) | 一种半导体清洗剂及其制备方法 | |
CN113201742B (zh) | 一种化学机械抛光后清洗液的应用 | |
CN112266832B (zh) | 一种半导体芯片清洗剂及制备方法与应用 | |
CN115160934A (zh) | 超亲水性大尺寸硅精抛液及其制备和使用方法 | |
CN111440675A (zh) | 一种新型环保硅晶片清洗试剂及其制备方法及其应用 | |
CN113186036A (zh) | 一种化学机械抛光后清洗液的应用 | |
CN113980747B (zh) | 一种半导体材料表面脱脂处理的清洗剂 | |
CN113215584B (zh) | 一种化学机械抛光后清洗液的制备方法 | |
CN113667546A (zh) | 一种硅片加工后清洗剂组合物 | |
CN112745990A (zh) | 一种无磷双组份清洗剂及其制备方法和应用 | |
CN113956925B (zh) | 一种用于半导体材料的金属离子清洗剂 | |
CN110453232B (zh) | 一种无磷常温复合型金属表面脱脂剂 | |
Choi et al. | Development of eco-friendly cleaning solution for industrial silicon wafer solar cell | |
CN101250466B (zh) | 一种彩色涂膜玻璃基板清洗剂及其制备方法 | |
CN101251722B (zh) | 一种正性光刻胶剥离液及其制备方法 | |
CN113151838A (zh) | 一种化学机械抛光后清洗液 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200724 |
|
RJ01 | Rejection of invention patent application after publication |