CN111426902A - Material mixing distinguishing method of BOSA device - Google Patents
Material mixing distinguishing method of BOSA device Download PDFInfo
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- CN111426902A CN111426902A CN202010381039.8A CN202010381039A CN111426902A CN 111426902 A CN111426902 A CN 111426902A CN 202010381039 A CN202010381039 A CN 202010381039A CN 111426902 A CN111426902 A CN 111426902A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/30—Structural combination of electric measuring instruments with basic electronic circuits, e.g. with amplifier
Abstract
The invention discloses a mixed material distinguishing method of a BOSA device, which comprises the steps of firstly replacing a variable resistor of a Wheatstone direct current bridge with a fixed resistor, then arranging a microprocessor MCU with a differential signal digital-to-analog converter, and respectively connecting an ADC (analog-to-digital converter) sampling end of the differential signal digital-to-analog converter to the intersection point of two arms of the Wheatstone direct current bridge, secondly inserting an OUTP pin and a GND (ground) pin of the BOSA device into two ends of a tested resistor and sampling to obtain a sampling value, and thirdly comparing the sampling value with a preset threshold value by the microprocessor MCU and distinguishing the type of the BOSA device according to a comparison result.
Description
Technical Field
The invention relates to the technical field of optical modules, in particular to a mixed material judging method of a BOSA device, and specifically relates to a mixed material judging method of a GPON O L T BOSA device and an EPON O L T BOSA device.
Background
The GPON O L T BOSA device and the EPON O L T BOSA device are both composed of 2.5G L D TOCAN +1.25G APD-TIA TOCAN, auxiliary materials, the external dimensions, colors and the like can be completely the same, and the auxiliary materials and the external dimensions, the colors and the like can not be distinguished from each other by naked eyes only from the appearance.
The GPON O L T APD-TIA TOCAN has 5 pins, and the internal structure of the APDSupply pin is shown in FIG. 3. generally, the bias voltage required by the current APD chip needs to be input by about 30V-50V, the VDD pin needs to be input by 3.3V power supply required by the current TIA chip, the OUTP pin and the OUTN pin are differential voltage signals output by the TIA chip, and the internal structure of the EPON O L T APD-TIATOCAN is basically the same.
The only difference between the GPON O L T APD-TIA TOCAN and the EPON O L T APD-TIA TOCAN is that TIA chips of different models are used, for example, M02036 is used for EPON O L T TIA, while GNA4113 is used for GPON O L T ITA, since TIA is built in a TOCAN opaque housing, so that the difference in appearance of TIA cannot be seen through the housing by naked eyes, but since the impedance from the OUTP pin to the GND pin is significantly different, it can be seen by resistance table measurement that the impedance from the OUTP pin to the GND pin of GPON is MOhm level, for example, 2MOhm ± 20% for GNA4113, and 20KOhm level for the impedance from the OUTP pin to the GND pin of EPON TIA, for example, M02036, 20KOhm ± 20%, therefore, the following two methods are commonly used in the prior art to distinguish the mixture of GPON O L T sa device and EPON O L T boca device:
in the category 1, as shown in fig. 4, a high-precision ohmmeter is used to measure the impedance from the OUTP pin to the GND pin of the APD-TIA TOCAN, and if the measured value is in MOhm level, the impedance can be determined as a GPON O L T BOSA device, and if the measured value is in KOhm level, the impedance can be determined as an EPON O L T BOSA device.
In the 2 nd type, as shown in fig. 5, a wheatstone dc bridge is built, the wheatstone dc bridge itself comprises two fixed resistors R1 and R2, a variable resistor Rs and a measured resistor Rx, during testing, the OUTP pin and the GND pin of the BOSA device are inserted into two ends of the measured resistor Rx in the bridge, and then a current meter is connected to the intersection B, D of two arms of the wheatstone dc bridge, the resistance value of the variable resistor Rs is adjusted to make the display value of the current meter equal to 0, so that it can be calculated and known that Rx = R1/R2 x Rs., and finally, according to the calculated value of Rx, it can be determined whether the epostone device is a GPON L T BOSA device or an n O L T BOSA device.
The two methods have the advantages of accurate and visual impedance measurement value. But the defects are that instruments are needed, the size is large, the price is high, and the integration to a large-scale automatic production line is not facilitated.
Disclosure of Invention
The invention aims to overcome the problems in the prior art and provides a material mixing judgment method for BOSA devices, which can quickly judge GPON O L T BOSA devices and EPON O L T BOSA devices at low cost, thereby greatly reducing the risk of material mixing of production lines.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a mixed material distinguishing method of a BOSA device is characterized by comprising the following steps: the method comprises the following steps:
the method comprises the following steps: firstly, replacing a variable resistor of a Wheatstone direct-current bridge with a fixed resistor, then setting a microprocessor MCU (microprogrammed control unit) with a differential signal digital-to-analog converter, and respectively connecting an ADC (analog-to-digital converter) sampling end of the differential signal digital-to-analog converter to the intersection point of two arms of the Wheatstone direct-current bridge;
step two: inserting an OUTP pin and a GND pin of a BOSA device into two ends of a resistor to be detected, and sampling by an ADC (analog-to-digital converter) sampling end of a differential signal digital-to-analog converter to obtain a sampling value;
and step three, comparing the sampling value with a preset threshold value by the microprocessor MCU, judging that the BOSA device is an EPON O L T BOSA device when the sampling value is smaller than the preset threshold value, and judging that the BOSA device is a GPONO L T BOSA device when the sampling value is larger than the preset threshold value.
In the first step, the resistance value of the replaced fixed resistor is the same as the resistance value of the fixed resistor included in the huygens direct current bridge.
The resistance value of the fixed resistor is the typical impedance value from the OUTP pin to the GND pin of the EPON O L T BOSA device.
And in the third step, the output end of the microprocessor MCU is connected with a PC machine for outputting the judgment result through a PC bus.
In the third step, an L ED lamp is connected to the output end of the microprocessor MCU, when the sampling value is smaller than the preset threshold value, the microprocessor MCU drives a L ED lamp to be bright or dim, the BOSA device is judged to be an EPON O L T BOSA device, when the sampling value is larger than the preset threshold value, the microprocessor MCU drives a L ED lamp to be dim or bright, and the BOSA device is judged to be a GPON O L T BOSA device.
The invention has the advantages that:
1. according to the invention, whether the BOSA device to be tested is a GPON O L TBOSA device or an EPON O L T BOSA device can be quickly judged only by replacing the variable resistor in the existing Wheatstone direct current bridge with a fixed resistor and arranging the microprocessor MCU with the differential signal digital-to-analog converter, so that the device has the advantages of simple structure, low cost and high judging speed, and the risk caused by material mixing on a production line is greatly reduced.
2. After the sampling value is obtained by the differential signal digital-to-analog converter and the judgment result is obtained by the microprocessor MCU according to the sampling value, the results can be displayed by adopting two methods, one method is to output the judgment result by a PC (personal computer) running ATE (automatic test equipment) automatic production software on a multiplexing production line, and the other method is to be used for judging by equipping the luminous state of an L ED lamp.
Drawings
FIG. 1 is a block diagram showing the structure of embodiment 1;
FIG. 2 is a block diagram showing the structure of embodiment 2;
FIG. 3 is an internal block diagram of a conventional GPON O L T APD-TIA TOCAN;
FIG. 4 is a schematic structural diagram of a first conventional discrimination technique;
fig. 5 is a schematic structural diagram of a second conventional discrimination technique.
Detailed Description
Example 1
The embodiment discloses a mixed material distinguishing method of a BOSA device, which comprises the following steps:
the method comprises the following steps: firstly, replacing a variable resistor of a Wheatstone direct-current bridge with a fixed resistor, then setting a microprocessor MCU containing a differential signal digital-to-analog converter, wherein the type of the microprocessor MCU can be C8051F320 containing a USB interface, the microprocessor MCU comprises two ADC sampling ends of ADC + and ADC-, then connecting the ADC sampling ends of the differential signal digital-to-analog converter to the intersection point of two arms of the Wheatstone direct-current bridge respectively, and the microprocessor MCU can directly obtain the sampling value of the differential signal digital-to-analog converter after the connection;
the resistance values of the three fixed resistors are preferably set to be 20kOhm +/-20% because of the general M02036 type of the EPON O L T BOSA device at present.
Step two: the OUTP pin and the GND pin of the BOSA device are inserted into two ends of a resistor to be detected of the bridge circuit, and a sampling value is obtained by matching sampling of two ADC sampling ends ADC + and ADC-of the differential signal digital-to-analog converter.
And step three, comparing the sampling value with a preset threshold value by the microprocessor MCU, judging that the BOSA device is an EPON O L T BOSA device when the sampling value is smaller than the preset threshold value, and judging that the BOSA device is a GPON O L T BOSA device when the sampling value is larger than the preset threshold value.
Specifically, the output end of the microprocessor MCU is connected with a PC through a PC bus, and ATE automatic production software is installed in the PC and used for outputting a judgment result according to the comparison result of the microprocessor MCU.
The implementation principle of the present embodiment will now be described in detail with reference to fig. 1, as follows:
1. the original wheatstone dc bridge is replaced by the fixed resistor R3, so that the replaced wheatstone dc bridge includes one resistor Rx to be measured and three fixed resistors R1, R2 and R3, and R1= R2= R3=20 kOhm.
2. The wheatstone dc bridge is set to include A, B, C, D four crossing points, and then the two ADC sampling terminals ADC + and ADC-of the differential signal digital-to-analog converter are connected to the wheatstone dc bridge crossing point C, D, respectively. The power supply of the microprocessor MCU and the Wheatstone DC bridge can also directly adopt Vbus output by the PC, and Vbus =5V, and the voltage of the Wheatstone DC bridge is Us.
3. During measurement, an OUTP pin and a GND pin of a BOSA device are inserted into two ends of a measured resistor Rx, the impedance from the OUTP pin to the GND pin of the EPON L T BOSA device is 20kOhm +/-20%, and the impedance from the OUTP pin to the GND pin of the GPON L T BOSA device is 2MOhm +/-20%, therefore, when the two ends of the measured resistor Rx are inserted into the EPON O L T BOSA device, a C point voltage Vc = Rx/(R1+ Rx) Us and a D point voltage Vd = R3/(R2+ R3) Us are basically the same, a differential voltage value sampled by a differential signal converter is smaller and approaches to 0V, when the two ends of the measured resistor Rx are inserted into the GPONO L T BOSA device, the C point voltage value is basically equal to Us and the D point voltage value is equal to Vd/2, the digital-analog-to-analog-digital converter samples the differential voltage value, the differential voltage value is closer to the D point voltage value to Vd/2, the differential voltage value sampled by the digital-analog signal converter, the differential voltage value is judged to be larger and the difference between the MCU 354/S2, and the difference between the sampled by the MCU 354 and the difference of the microprocessor, the differential voltage is judged to be larger and the difference of the differential voltage/S sampled by the MCU.
Finally, the applicant has verified the solution of the present embodiment as follows:
the applicant marks 500 GPON O L T BOSA devices and 500 EPON O L T BOSA devices with different marks respectively, mixes the GPON O L T BOSA devices and the EPON O L T BOSA devices, and then verifies by using the scheme of the present embodiment by a technician who does not know the specific mark function, after testing, the testing of about 20 BOSA devices can be completed every minute, and the testing time of 1000 BOSA devices is finally completed for about 50 minutes (it is to be noted that the time consumed in the whole testing process is mainly the insertion and extraction of the BOSA devices on the testing apparatus, rather than the sampling and discrimination), and the testing result is that 500 GPON L T BOSA devices and 500 EPON O L T BOSA devices are completely and accurately distinguished.
Example 2
The embodiment discloses a mixed material distinguishing method of a BOSA device, which comprises the following steps:
the method comprises the following steps: firstly, replacing a variable resistor of a Wheatstone direct-current bridge with a fixed resistor, then setting a microprocessor MCU containing a differential signal digital-to-analog converter, wherein the type of the microprocessor MCU can be C8051F320 containing a USB interface, the microprocessor MCU comprises two ADC sampling ends of ADC + and ADC-, then connecting the ADC sampling ends of the differential signal digital-to-analog converter to the intersection point of two arms of the Wheatstone direct-current bridge respectively, and the microprocessor MCU can directly obtain the sampling value of the differential signal digital-to-analog converter after the connection;
the resistance values of the three fixed resistors are preferably set to be 20kOhm +/-20% because of the general M02036 type of the EPON O L T BOSA device at present.
Step two: the OUTP pin and the GND pin of the BOSA device are inserted into two ends of a resistor to be detected in the bridge, and a sampling value is obtained by matching sampling of two ADC sampling ends ADC + and ADC-of the differential signal digital-to-analog converter.
And step three, comparing the sampling value with a preset threshold value by the microprocessor MCU, judging that the BOSA device is an EPON O L T BOSA device when the sampling value is smaller than the preset threshold value, and judging that the BOSA device is a GPON O L T BOSA device when the sampling value is larger than the preset threshold value.
For example, when the sampling value is smaller than a preset threshold value, the microprocessor MCU drives the L ED lamp to be bright, the BOSA device is judged to be an EPON O L T BOSA device, and when the sampling value is larger than the preset threshold value, the microprocessor MCU drives the L ED lamp to be dark, the BOSA device is judged to be a GPON O L T BOSA device.
The implementation principle of this embodiment is basically the same as that of embodiment 1, and the main difference is that:
as shown in fig. 2, the preset threshold is set to be Us/4, the sampled differential voltage value is compared with Us/4, if the sampled differential voltage value is smaller than Us/4, the microprocessor MCU drives L ED lamps to be bright, the BOSA device is determined to be an EPON O L T BOSA device, and if the sampled differential voltage value is larger than Us/4, the microprocessor MCU drives L ED lamps to be dim, and the BOSA device is determined to be a GPON O L T BOSA device.
Finally, the applicant has verified the solution of the present embodiment as follows:
the applicant makes different marks for 1000 GPON O L T BOSA devices and 1000 EPON O L T BOSA devices respectively, mixes the GPON O L T BOSA devices and the EPON O L T BOSA devices, then adopts the scheme of the embodiment to verify by technicians who do not know the specific mark function, and tests about 20 BOSA devices per minute, and finally tests about 2000 BOSA devices for about 100 minutes (it should be noted that the OUTP pin and GND pin of a BOSA device are inserted into two ends of a tested resistor to immediately obtain a determination result, and the time consumed in the whole test process mainly lies in plugging and unplugging the BOSA devices on a test device instead of sampling and distinguishing), and the test result is to completely and accurately distinguish the 1000 GPON L T BOSA devices from the 1000 EPON O L T BOSA devices.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.
Claims (5)
1. A mixed material distinguishing method of a BOSA device is characterized by comprising the following steps: the method comprises the following steps:
the method comprises the following steps: firstly, replacing a variable resistor of a Wheatstone direct-current bridge with a fixed resistor, then setting a microprocessor MCU (microprogrammed control unit) with a differential signal digital-to-analog converter, and respectively connecting an ADC (analog-to-digital converter) sampling end of the differential signal digital-to-analog converter to the intersection point of two arms of the Wheatstone direct-current bridge;
step two: inserting an OUTP pin and a GND pin of a BOSA device into two ends of a resistor to be detected, and sampling by an ADC (analog-to-digital converter) sampling end of a differential signal digital-to-analog converter to obtain a sampling value;
and step three, comparing the sampling value with a preset threshold value by the microprocessor MCU, judging that the BOSA device is an EPON O L T BOSA device when the sampling value is smaller than the preset threshold value, and judging that the BOSA device is a GPONO L T BOSA device when the sampling value is larger than the preset threshold value.
2. A method for discriminating a mixed material of a BOSA device according to claim 1, wherein: in the first step, the resistance value of the replaced fixed resistor is the same as the resistance value of the fixed resistor included in the huygens direct current bridge.
3. The method for judging the mixed material of the BOSA device according to claim 2, characterized in that the resistance value of the fixed resistor is an impedance typical value from an OUTP pin to a GND pin of the EPON O L T BOSA device.
4. A method of discriminating a mixed material of a BOSA device according to any one of claims 1 to 3, wherein: and in the third step, the output end of the microprocessor MCU is connected with a PC machine for outputting the judgment result through a PC bus.
5. The method for judging the mixing material of the BOSA devices according to any one of the claims 1 to 3, wherein in the third step, the output end of the microprocessor MCU is connected with L ED lamps, when the sampling value is smaller than the preset threshold value, the microprocessor MCU drives L ED lamps to be bright or dim, the BOSA device is judged to be an EPON O L T BOSA device, when the sampling value is larger than the preset threshold value, the microprocessor MCU drives L ED lamps to be dim or bright, and the BOSA device is judged to be a GPON O L T BOSA device.
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