CN111424237A - Preparation method of film for selectively absorbing solar spectrum - Google Patents
Preparation method of film for selectively absorbing solar spectrum Download PDFInfo
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- CN111424237A CN111424237A CN202010429299.8A CN202010429299A CN111424237A CN 111424237 A CN111424237 A CN 111424237A CN 202010429299 A CN202010429299 A CN 202010429299A CN 111424237 A CN111424237 A CN 111424237A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0676—Oxynitrides
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
- C23C28/3455—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer with a refractory ceramic layer, e.g. refractory metal oxide, ZrO2, rare earth oxides or a thermal barrier system comprising at least one refractory oxide layer
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S70/00—Details of absorbing elements
- F24S70/20—Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption
- F24S70/225—Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption for spectrally selective absorption
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/40—Solar thermal energy, e.g. solar towers
Abstract
The application provides a preparation method of a film layer for selectively absorbing solar spectrum, the film layer comprises 6 layers, from bottom to top, a strengthening film made of chromium oxide, a low-emissivity film made of copper, a buffer film made of chromium nitride, a transition film made of chromium oxynitride, chromium nitride and a mixture of chromium oxide, an absorbing film made of chromium oxide and an anti-reflection film made of silicon dioxide, wherein the strengthening film, the buffer film, the transition film, the absorbing film and the anti-reflection film are all prepared by reactive sputtering, and the low-emissivity film is prepared by direct current sputtering; through detection, the absorption rate of the film layer prepared by the method is 93-97%, and is improved by 3-9% compared with the prior art; the emissivity of the film layer prepared by the method is 3% -5%, and is reduced by 3% -12% compared with the prior art; the adhesive force is 1 grade; the thermal efficiency of the solar thermal collector adopting the film layer prepared by the method can reach 80.4 percent, and is improved by 6to 8.4 percent compared with the prior art.
Description
Technical Field
The invention relates to the technical field of solar heat absorption films, in particular to a preparation method of a film for selectively absorbing solar spectrum.
Background
In the production of flat-plate solar collectors, a thin film is often coated on the outer surface of a base material of a heat absorber (heat absorbing plate) to improve the absorption of solar heat, and the conventional chemical coating has great environmental pollution and poor absorption of solar heat.
When a compound film is sputtered, if the compound is directly used as a target, the composition of the sputtered film is different from that of the target, and the composition and properties of the compound are not easy to control because different substances are sputtered with different sputtering yields. In order to obtain a high quality compound film, it is common to inject a gas reacting with the sputtered material during sputtering of a metal target, and the gas reacts with the sputtered material to form a desired compound to be deposited on the substrate. Sputtering is advantageously carried out if the amount of gas introduced is just sufficient to react with the sputtered atoms such that very little compound is formed on the target surface. On the contrary, if an excessive amount of gas is introduced, the gas reacts not only with the sputtered atoms on the substrate but also with the target material on the target surface to form a compound.
Therefore, how to improve the absorption of solar heat energy by the film on the outer surface of the substrate of the heat absorber and improve the efficiency of photothermal conversion is a technical problem that needs to be solved by those skilled in the art.
Disclosure of Invention
The embodiment of the invention aims to provide a preparation method of a film for selectively absorbing solar spectrum.
In order to solve the technical problems, the technical scheme provided by the invention is as follows:
a method for preparing a film for selective absorption of the solar spectrum, comprising the following steps carried out in sequence:
1) preparing a reinforced film by reactive sputtering: in a first vacuum coating chamber, argon ions impact a target material, the impacted chromium ions and introduced oxygen perform chemical reaction to generate chromium oxide, and the chromium oxide generated by the reaction is deposited on the outer surface of the base material of the heat absorbing body to form a strengthening film;
2) preparing a low-emissivity film by sputtering: in a second vacuum coating chamber, argon ions impact a target material, and copper ions impacted out deposit on the outer surface of the reinforced film prepared in the step 1) to form a low-emissivity film;
3) preparing a buffer film by reactive sputtering: in a third vacuum coating chamber, argon ions impact the target material, the impacted chromium ions and the introduced nitrogen gas perform chemical reaction to generate chromium nitride, and the chromium nitride generated by the reaction is deposited on the outer surface of the low-emissivity film prepared in the step 2) to form a buffer film;
4) preparing a transition film by reactive sputtering: in a fourth vacuum coating chamber, argon ions impact the target material, the impacted chromium ions and the introduced oxygen and nitrogen chemically react to generate chromium oxynitride, chromium nitride and chromium oxide, and the chromium oxynitride, chromium nitride and chromium oxide generated by the reaction are deposited on the outer surface of the buffer film prepared in the step 3) to form a transition film;
5) preparing an absorption film by reactive sputtering: in a fifth vacuum coating chamber, argon ions impact the target material, the impacted chromium ions and the introduced oxygen perform chemical reaction to generate chromium oxide, and the chromium oxide generated by the reaction is deposited on the outer surface of the transition film prepared in the step 4) to form an absorption film;
6) reactive sputtering to prepare an antireflection film: in a sixth vacuum coating chamber, argon ions impact a target material, silicon ions impacted out and introduced oxygen are subjected to chemical reaction to generate silicon dioxide, the silicon dioxide generated by the reaction is deposited on the outer surface of the absorption film prepared in the step 5) to form an antireflection film, and a film layer comprising 6 layers is prepared on the outer surface of the base material of the heat absorber.
Preferably, in the step 1), the target material is a chromium target, the flow of argon is 50-200 sccm, the flow of oxygen is 10-200 sccm, and the thickness of the prepared reinforced film is 30-120 nm.
Preferably, in the step 2), the target material is a copper target, the argon flow is 50-500 sccm, and the thickness of the prepared low-emissivity film is 180-220 nm.
Preferably, in the step 3), the target material is a chromium target, the flow of argon is 50-300 sccm, the flow of nitrogen is 10-100 sccm, and the thickness of the prepared buffer film is 30-150 nm.
Preferably, in the step 4), the target material is a chromium target, the flow of argon gas is 50-500 sccm, the flow of nitrogen gas is 10-200 sccm, the flow of oxygen gas is 10-200 sccm, and the thickness of the prepared transition film is 30-100 nm.
Preferably, in the step 5), the target material is a chromium target, the flow of argon is 50-300 sccm, the flow of oxygen is 10-200 sccm, and the thickness of the prepared absorption film is 30-120 nm.
Preferably, in the step 6), the target material is a silicon target, the flow of argon is 50-500 sccm, the flow of oxygen is 50-200 sccm, and the thickness of the prepared anti-reflection film is 60-200 nm.
Preferably, in step 1), the substrate of the heat absorber is a stainless steel sheet, an aluminum sheet or a copper sheet.
The application provides a preparation method of a film layer for selectively absorbing solar spectrum, wherein a heat absorber consists of a substrate and the film layer arranged on the outer surface of the substrate, the film layer comprises 6 layers, namely a reinforced film made of chromium oxide, a low-emissivity film made of copper, a buffer film made of chromium nitride, a transition film made of chromium oxynitride, a mixture of chromium nitride and chromium oxide, an absorbing film made of chromium oxide and an anti-reflection film made of silicon dioxide from bottom to top, the reinforced film, the buffer film, the transition film, the absorbing film and the anti-reflection film are all prepared by reactive sputtering, and the low-emissivity film made of copper is prepared by direct current sputtering;
through detection, the absorption rate of the film layer prepared by the method is 93-97%, and is improved by 3-9% compared with the absorption rate of the film layer in the prior art; the emissivity of the film layer prepared by the method is 3% -5%, and is reduced by 3% -12% compared with the emissivity of the film layer in the prior art; the adhesive force of the film layer is tested according to the standard requirement, and the result is grade 1; the film prepared by the method has the photo-thermal conversion efficiency of 77-82%, which is improved by 6-10% compared with the photo-thermal conversion efficiency of the film in the prior art; jing nationality festivalCan be detected by a product quality supervision and inspection center, the film layer of the six-layer film has excellent performance which is greatly superior to the national standard requirement, the solar absorption ratio α (AM1.5) reaches 0.94, and the hemispherical emission ratioh(80 ℃) was only 0.038.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are a part of the embodiments of the present invention, but not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
The application provides a preparation method of a film for selectively absorbing solar spectrum, which comprises the following steps in sequence:
1) preparing a reinforced film by reactive sputtering: in a first vacuum coating chamber, argon ions impact a target material, the impacted chromium ions and introduced oxygen perform chemical reaction to generate chromium oxide, and the chromium oxide generated by the reaction is deposited on the outer surface of the base material of the heat absorbing body to form a strengthening film;
2) preparing a low-emissivity film by sputtering: in a second vacuum coating chamber, argon ions impact a target material, and copper ions impacted out deposit on the outer surface of the reinforced film prepared in the step 1) to form a low-emissivity film;
3) preparing a buffer film by reactive sputtering: in a third vacuum coating chamber, argon ions impact the target material, the impacted chromium ions and the introduced nitrogen gas perform chemical reaction to generate chromium nitride, and the chromium nitride generated by the reaction is deposited on the outer surface of the low-emissivity film prepared in the step 2) to form a buffer film;
4) preparing a transition film by reactive sputtering: in a fourth vacuum coating chamber, argon ions impact the target material, the impacted chromium ions and the introduced oxygen and nitrogen chemically react to generate chromium oxynitride, chromium nitride and chromium oxide, and the chromium oxynitride, chromium nitride and chromium oxide generated by the reaction are deposited on the outer surface of the buffer film prepared in the step 3) to form a transition film;
5) preparing an absorption film by reactive sputtering: in a fifth vacuum coating chamber, argon ions impact the target material, the impacted chromium ions and the introduced oxygen perform chemical reaction to generate chromium oxide, and the chromium oxide generated by the reaction is deposited on the outer surface of the transition film prepared in the step 4) to form an absorption film;
6) reactive sputtering to prepare an antireflection film: in a sixth vacuum coating chamber, argon ions impact a target material, silicon ions impacted out and introduced oxygen are subjected to chemical reaction to generate silicon dioxide, the silicon dioxide generated by the reaction is deposited on the outer surface of the absorption film prepared in the step 5) to form an antireflection film, and a film layer comprising 6 layers is prepared on the outer surface of the base material of the heat absorber.
In one embodiment of the present application, in step 1), the target is a chromium target, the flow rate of argon is 50 to 200sccm, the flow rate of oxygen is 10 to 200sccm, and the thickness of the obtained reinforced film is 30 to 120 nm.
In one embodiment of the present application, in step 2), the target material is a copper target, the argon flow is 50 to 500sccm, and the thickness of the low-emissivity film is 180 to 220 nm.
In an embodiment of the application, in the step 3), the target is a chromium target, the flow rate of argon is 50 to 300sccm, the flow rate of nitrogen is 10 to 100sccm, and the thickness of the prepared buffer film is 30 to 150 nm.
In an embodiment of the application, in the step 4), the target material is a chromium target, the flow rate of argon is 50 to 500sccm, the flow rate of nitrogen is 10 to 200sccm, the flow rate of oxygen is 10 to 200sccm, and the thickness of the prepared transition film is 30 to 100 nm.
In an embodiment of the application, in the step 5), the target is a chromium target, the flow rate of argon is 50 to 300sccm, the flow rate of oxygen is 10 to 200sccm, and the thickness of the prepared absorption film is 30 to 120 nm.
In an embodiment of the present invention, in step 6), the target material is a silicon target, the flow rate of argon is 50 to 500sccm, the flow rate of oxygen is 50 to 200sccm, and the thickness of the anti-reflection film is 60 to 200 nm.
In one embodiment of the present application, in step 1), the substrate of the heat absorbing body is a stainless steel sheet, an aluminum sheet or a copper sheet.
In the present application, sccm is a volume flow unit, meaning milliliter per minute under standard conditions.
The application provides a rete can selective absorption solar spectrum, the principle wherein is: the vast majority of energy radiated to the earth by the sun comes from ultraviolet rays, visible light and infrared rays with the wavelength range of 0.20-3.0 mu m, and the energy in the wavelength range occupies 98.07 percent of the total energy of the solar radiation outside the sphere; the wavelength range of the heat radiation is mainly concentrated in 2.5-30 μm. The spectrum selective absorption coating is applied to the heat absorber, and the characteristic that the wavelength range of solar radiation (mainly concentrated on 0.20-3.0 mu m) is different from the wavelength range of thermal radiation is utilized, so that the absorption of the heat absorber on the solar radiation can be enhanced, and the thermal radiation loss of the heat absorber to the environment can be reduced. The greatest feature of selective coating materials is that they have different heat-radiating properties for radiation in different spectral regions. The thin-layer metal oxide or sulfide with the thickness of 0.1-2 mu m, such as copper oxide, chromium oxide and the like, has very high solar radiation absorption ratio and long-wave radiation transmittance. The main components of the buffer film, the transition film and the absorption film of the 6-layer film layer are oxides such as chromium oxide, and the solar radiation energy with the wavelength range of 0.20-3.0 mu m can be absorbed and converted into heat energy.
The application realizes high absorptivity, low emissivity and good adhesion of a film layer for selectively absorbing solar spectrum, and the working principle is as follows: in the sunlight reflection spectrum with the wavelength of below 2500nm, the lower the reflectivity is, the higher the absorptivity is, and on the contrary, in the sunlight reflection spectrum with the wavelength of above 2500nm, the higher the reflectivity is, the lower the emissivity is; the surface of the base material is pretreated, the roughness of the surface of the heat absorber is increased, the adhesive force can be effectively enhanced, and the result is grade 1 when the test is carried out according to the standard requirement.
This application has improved the efficiency of the light and heat conversion of rete, and theory of operation wherein is: the low emissivity of pure copper and brass is the lowest in metals, and is only 0.03-0.05, so that the copper ion film is prepared by sputtering, and is used as a low emissivity film to reduce the emissivity of the film layer;
the anti-reflection film is characterized in that the reflection capacity of the surface of the material is related to the refractive index of the material, the reflection of the material to solar radiation is reduced by reducing the refractive index of the surface of the material, and a porous silicon dioxide film layer is made on the metal surface, so that the refractive index is low, and the solar reflectance is greatly reduced;
the oxides such as chromium oxide and the like have high absorptivity, and the solar absorptivity of the film layer prepared by the method is 93-97% through detection.
Example 1
A method for preparing a film for selective absorption of the solar spectrum, comprising the following steps carried out in sequence:
1) preparing a reinforced film by reactive sputtering: in a first vacuum coating chamber, argon ions impact a target material, the impacted chromium ions and introduced oxygen perform chemical reaction to generate chromium oxide, and the chromium oxide generated by the reaction is deposited on the outer surface of the base material of the heat absorbing body to form a strengthening film;
in the step 1), the base material of the heat absorbing body is a stainless steel sheet;
in the step 1), the target material is a chromium target, the power is 9kW, the voltage is 500V, the vacuum degree is 8.0E-6Torr, the coating speed is 6mm/s, the argon flow is 120sccm, the oxygen flow is 80sccm, and the thickness of the prepared reinforced film is 70 nm; the film thickness is adjustable according to the process requirements;
2) preparing a low-emissivity film by sputtering: in a second vacuum coating chamber, argon ions impact a target material, and copper ions impacted out deposit on the outer surface of the reinforced film prepared in the step 1) to form a low-emissivity film;
in the step 2), the target material is a copper target, the power is 7kW, the voltage is 520V, the vacuum degree is 8.0E-6Torr, the coating speed is 6mm/s, the argon flow is 320sccm, and the thickness of the prepared low-emissivity film is 200 nm;
3) preparing a buffer film by reactive sputtering: in a third vacuum coating chamber, argon ions impact the target material, the impacted chromium ions and the introduced nitrogen gas perform chemical reaction to generate chromium nitride, and the chromium nitride generated by the reaction is deposited on the outer surface of the low-emissivity film prepared in the step 2) to form a buffer film;
in the step 3), the target material is a chromium target, the power is 7kW, the voltage is 420V, the vacuum degree is 8.0E-6Torr, the coating speed is 6mm/s, the argon flow is 240sccm, the nitrogen flow is 43sccm, and the thickness of the prepared buffer film is 90 nm;
4) preparing a transition film by reactive sputtering: in a fourth vacuum coating chamber, argon ions impact the target material, the impacted chromium ions and the introduced oxygen and nitrogen chemically react to generate chromium oxynitride, chromium nitride and chromium oxide, and the chromium oxynitride, chromium nitride and chromium oxide generated by the reaction are deposited on the outer surface of the buffer film prepared in the step 3) to form a transition film;
in the step 4), the target material is a chromium target, the power is 15kW, the voltage is 510V, the vacuum degree is 8.0E-6Torr, the coating speed is 6mm/s, the argon flow is 90sccm, the nitrogen flow is 70sccm, the oxygen flow is 50sccm, and the thickness of the prepared transition film is 70 nm;
5) preparing an absorption film by reactive sputtering: in a fifth vacuum coating chamber, argon ions impact the target material, the impacted chromium ions and the introduced oxygen perform chemical reaction to generate chromium oxide, and the chromium oxide generated by the reaction is deposited on the outer surface of the transition film prepared in the step 4) to form an absorption film;
in the step 5), the target material is a chromium target, the power is 11kW, the voltage is 500V, the vacuum degree is 8.0E-6Torr, the coating speed is 6mm/s, the argon flow is 110sccm, the oxygen flow is 90sccm, and the thickness of the prepared absorption film is 80 nm;
6) reactive sputtering to prepare an antireflection film: in a sixth vacuum coating chamber, argon ions impact a target material, silicon ions impacted out and introduced oxygen are subjected to chemical reaction to generate silicon dioxide, the silicon dioxide generated by the reaction is deposited on the outer surface of the absorption film prepared in the step 5) to form an anti-reflection film, and a film layer comprising 6 layers is prepared on the outer surface of the base material of the heat absorber;
in the step 6), the target material is a silicon target, the power is 6kW, the voltage is 560V, the vacuum degree is 8.0E-6Torr, the coating speed is 6mm/s, the argon flow is 220sccm, the oxygen flow is 30sccm, and the thickness of the prepared anti-reflection film is 120 nm.
Through detection, the absorption rate of the film layer prepared in the embodiment 1 is 94%, which is improved by 3% -9% compared with the absorption rate of the film layer in the prior art; the emissivity of the film layer prepared by the method is 4%, and is reduced by 3% -12% compared with the emissivity of the film layer in the prior art; the adhesive force of the film layer is tested according to the standard requirement, and the result is grade 1; the thermal efficiency of the solar thermal collector adopting the film layer prepared by the method is 80.4 percent, which is improved by 6to 8.4 percent compared with the thermal efficiency of the solar thermal collector adopting the film layer in the prior art.
Methods and devices not described in detail in the present invention are all the prior art and are not described in detail.
The principles and embodiments of the present invention are explained herein using specific examples, which are set forth only to help understand the method and its core ideas of the present invention. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (8)
1. A preparation method of a film for selectively absorbing solar spectrum is characterized by comprising the following steps of:
1) preparing a reinforced film by reactive sputtering: in a first vacuum coating chamber, argon ions impact a target material, the impacted chromium ions and introduced oxygen perform chemical reaction to generate chromium oxide, and the chromium oxide generated by the reaction is deposited on the outer surface of the base material of the heat absorbing body to form a strengthening film;
2) preparing a low-emissivity film by sputtering: in a second vacuum coating chamber, argon ions impact a target material, and copper ions impacted out deposit on the outer surface of the reinforced film prepared in the step 1) to form a low-emissivity film;
3) preparing a buffer film by reactive sputtering: in a third vacuum coating chamber, argon ions impact the target material, the impacted chromium ions and the introduced nitrogen gas perform chemical reaction to generate chromium nitride, and the chromium nitride generated by the reaction is deposited on the outer surface of the low-emissivity film prepared in the step 2) to form a buffer film;
4) preparing a transition film by reactive sputtering: in a fourth vacuum coating chamber, argon ions impact the target material, the impacted chromium ions and the introduced oxygen and nitrogen chemically react to generate chromium oxynitride, chromium nitride and chromium oxide, and the chromium oxynitride, chromium nitride and chromium oxide generated by the reaction are deposited on the outer surface of the buffer film prepared in the step 3) to form a transition film;
5) preparing an absorption film by reactive sputtering: in a fifth vacuum coating chamber, argon ions impact the target material, the impacted chromium ions and the introduced oxygen perform chemical reaction to generate chromium oxide, and the chromium oxide generated by the reaction is deposited on the outer surface of the transition film prepared in the step 4) to form an absorption film;
6) reactive sputtering to prepare an antireflection film: in a sixth vacuum coating chamber, argon ions impact a target material, silicon ions impacted out and introduced oxygen are subjected to chemical reaction to generate silicon dioxide, the silicon dioxide generated by the reaction is deposited on the outer surface of the absorption film prepared in the step 5) to form an antireflection film, and a film layer comprising 6 layers is prepared on the outer surface of the base material of the heat absorber.
2. The method as claimed in claim 1, wherein in step 1), the target material is a chromium target, the flow rate of argon is 50-200 sccm, the flow rate of oxygen is 10-200 sccm, and the thickness of the obtained reinforced film is 30-120 nm.
3. The method as claimed in claim 1, wherein in step 2), the target material is a copper target, the flow of argon gas is 50-500 sccm, and the thickness of the low-emissivity film is 180-220 nm.
4. The method as claimed in claim 1, wherein in step 3), the target material is a chromium target, the flow rate of argon gas is 50-300 sccm, the flow rate of nitrogen gas is 10-100 sccm, and the thickness of the prepared buffer film is 30-150 nm.
5. The method as claimed in claim 1, wherein in step 4), the target material is a chromium target, the flow rate of argon is 50 to 500sccm, the flow rate of nitrogen is 10 to 200sccm, the flow rate of oxygen is 10 to 200sccm, and the thickness of the prepared transition film is 30 to 100 nm.
6. The method as claimed in claim 1, wherein in step 5), the target material is a chromium target, the flow rate of argon is 50-300 sccm, the flow rate of oxygen is 10-200 sccm, and the thickness of the prepared absorption film is 30-120 nm.
7. The method as claimed in claim 1, wherein in step 6), the target material is a silicon target, the flow rate of argon is 50-500 sccm, the flow rate of oxygen is 50-200 sccm, and the thickness of the anti-reflective film is 60-200 nm.
8. The method of claim 1, wherein in step 1), the substrate of the heat absorbing body is stainless steel sheet, aluminum sheet or copper sheet.
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