CN111403588B - L-shaped semiconductor thermoelectric arm structure and semiconductor refrigerating sheet - Google Patents
L-shaped semiconductor thermoelectric arm structure and semiconductor refrigerating sheet Download PDFInfo
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- CN111403588B CN111403588B CN202010040008.6A CN202010040008A CN111403588B CN 111403588 B CN111403588 B CN 111403588B CN 202010040008 A CN202010040008 A CN 202010040008A CN 111403588 B CN111403588 B CN 111403588B
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
Abstract
The invention belongs to the technical field related to semiconductor refrigeration, and discloses an L-shaped semiconductor thermoelectric arm structure and a semiconductor refrigeration piece, wherein the semiconductor thermoelectric arm structure is L-shaped and comprises a cold-end ceramic substrate, a cold-end conductive and heat-conductive copper sheet, a P-shaped thermoelectric arm, a hot-end conductive and heat-conductive copper block, a hot-end ceramic substrate and an N-shaped thermoelectric arm, wherein the P-shaped thermoelectric arm, the N-shaped thermoelectric arm and the hot-end conductive and heat-conductive copper block are respectively arranged on the surface of the hot-end ceramic substrate facing the cold-end ceramic substrate; the cold-end conductive and heat-conducting copper sheets are arranged on the P-type thermoelectric arm and the N-type thermoelectric arm, and the cold-end ceramic substrate is arranged on the cold-end conductive and heat-conducting copper sheets; the cold end electric conduction and heat conduction copper sheet, the P-type thermoelectric arm, the N-type thermoelectric arm and the hot end electric conduction and heat conduction copper block form an L-shaped structure. The invention reduces the flowing length of current, optimizes the heat dissipation condition and improves the refrigerating capacity and response speed in unit area.
Description
Technical Field
The invention belongs to the technical field related to semiconductor refrigeration, and particularly relates to an L-shaped semiconductor thermoelectric arm structure and a semiconductor refrigeration piece.
Background
The thermoelectric refrigerator is a device for directly converting electric energy into heat energy, and is different from the traditional compression type refrigeration technology in that no moving part is arranged in the thermoelectric refrigerator, and the electric energy is directly converted into the heat energy. Under the current technical conditions, the thermoelectric refrigerator has a small refrigeration coefficient, but has the advantages of light weight, small volume, high reliability, long service life, no noise, high response speed and the like, and has wide application prospects in the fields of space cooling, device cooling, accurate temperature control and the like. However, the maximum cooling flux of the conventional thermoelectric refrigerator is small, so that the conventional thermoelectric refrigerator is often applied to occasions with small cooling capacity requirements at present, and cannot be matched with high heat loads in the fields of efficient cooling, temperature control and the like, which is still a great technical problem.
In recent years, thin film thermoelectric refrigerators have received much attention, and it is easy to derive from equilibrium equation of thermoelectric refrigeration that, under a certain material of thermoelectric arms, the smaller the height of thermoelectric arms, the larger the available cooling capacity, and because thin film thermoelectric refrigerators are manufactured without using a cutting process, the extremely small height of thermoelectric arms can be realized, and meanwhile, thin film thermoelectric materials can generate a more favorable carrier scattering mechanism in the manufacturing process, and lower lattice thermal conductivity can be realized. Thanks to these characteristics, thin film thermoelectric coolers can achieve much higher cooling capacities than conventional thermoelectric coolers. On the other hand, thin film thermoelectric coolers are mostly found in paper research and laboratory preparation and are far from being used in commercial industry because the problems of manufacturing process, cost and the like are difficult to solve.
Therefore, under the condition that the performance of the thermoelectric material is not improved and the conventional thermoelectric arm cannot be processed to be a thermoelectric arm with a smaller height due to process limitation, the most effective optimization mode is to optimize the size and the structure of the thermoelectric refrigerator, and related researchers propose a series of optimization means such as hollowing, inclining, variable cross section and segmentation, so that certain optimization results are obtained on the maximum refrigerating capacity, the maximum refrigerating temperature difference and the refrigerating coefficient. However, in none of the current solutions, the current flow direction in the thermoelectric legs through the entire thermoelectric leg in a substantially straight line is changed. Therefore, the maximum cooling capacity cannot be further optimized to a large extent under the limitation of the thermoelectric cooling principle.
Disclosure of Invention
Aiming at the defects or improvement requirements of the prior art, the invention provides an L-shaped semiconductor thermoelectric arm structure and a semiconductor refrigerating piece, which can be processed by adopting a traditional cutting process, the flow direction of current and electric quantity is regulated and controlled by changing the thermoelectric arm structure, the flowing length of the current is reduced, the heat dissipation condition is optimized, and the thermoelectric arm formed in the mode can obviously improve the refrigerating capacity and the response speed of a unit area.
In order to achieve the above object, according to an aspect of the present invention, an L-shaped semiconductor thermoelectric arm structure is provided, where the semiconductor thermoelectric arm structure is L-shaped, and includes a cold-end ceramic substrate, a cold-end electrically and thermally conductive copper sheet, a P-type thermoelectric arm, a hot-end electrically and thermally conductive copper block, a hot-end ceramic substrate, and an N-type thermoelectric arm, where the P-type thermoelectric arm, the N-type thermoelectric arm, and the hot-end electrically and thermally conductive copper block are respectively disposed on a surface of the hot-end ceramic substrate facing the cold-end ceramic substrate; the cold-end conductive and heat-conducting copper sheets are arranged on the P-type thermoelectric arm and the N-type thermoelectric arm, and the cold-end ceramic substrate is arranged on the cold-end conductive and heat-conducting copper sheets;
the cold end electric conduction and heat conduction copper sheet, the P-type thermoelectric arm, the N-type thermoelectric arm and the hot end electric conduction and heat conduction copper block form an L-shaped structure.
Further, the width W of the hot-end electric and heat conducting copper blockCu-heatGreater than 50 microns.
Further, the height H of the hot-end electric and heat conducting copper blockCu-heatThe height of the P-type thermoelectric arm is less than or equal to that of the P-type thermoelectric arm.
Further, the height of the P-type thermoelectric arm is equal to the height of the N-type thermoelectric arm.
Further, the shape and the size of the P-type thermoelectric arm are consistent with those of the N-type thermoelectric arm.
Further, the width W of the section of the cold-end electric and heat conducting copper sheetCu-coldThe cross section width W of the N-type thermoelectric arm is less than or equal toTE。
Furthermore, the P-type thermoelectric arm and the N-type thermoelectric arm are arranged along a first direction, the hot-end electric and heat conduction copper block is arranged along a second direction parallel to the first direction, and the side surface of the P-type thermoelectric arm and the side surface of the N-type thermoelectric arm are respectively connected with the side surface of the hot-end electric and heat conduction copper block.
Further, the width W of the cold-end electric and heat conduction copper sheetCu-coldLess than or equal to 1.5 mm.
According to another aspect of the present invention, there is provided a semiconductor chilling plate comprising an L-shaped semiconductor thermoelectric arm structure as described above.
Furthermore, the semiconductor refrigeration piece further comprises an n-shaped structure thermoelectric arm, and the n-shaped structure thermoelectric arm and the L-shaped semiconductor thermoelectric arm are arranged at intervals.
Generally, compared with the prior art, the L-shaped semiconductor thermoelectric arm structure and the semiconductor cooling plate provided by the invention have the following beneficial effects:
1. the cold end electric conduction and heat conduction copper sheet, the P-type thermoelectric arm, the N-type thermoelectric arm and the hot end electric conduction and heat conduction copper block form an L-shaped structure, so that current does not flow through the whole thermoelectric arm structure, but flows through the thermoelectric arm in an L-shaped path, the whole flow path is shortened, the cooling flux of the thermoelectric arm is greatly increased, the response speed is accelerated, and better refrigeration performance is realized.
2. The P-type thermoelectric arm, the N-type thermoelectric arm and the hot-end electric and heat conduction copper block are respectively arranged on the surface of the hot-end ceramic substrate facing the cold-end ceramic substrate; the cold-end heat conduction copper sheets are arranged on the P-type thermoelectric arms and the N-type thermoelectric arms, and the cold-end ceramic substrate is arranged on the cold-end heat conduction copper sheets, so that the P-type thermoelectric arms and the N-type thermoelectric arms are in direct contact with the hot-end ceramic substrate besides the hot-end heat conduction copper sheets, partial heat can be directly transferred to the hot-end ceramic substrate, a hot-end radiating surface is increased, the radiating condition of the thermoelectric arms is optimized, the diffusion of joule heat generated in the thermoelectric arms to the cold ends is reduced, and the performance of the thermoelectric arms under the refrigerating working condition is optimized.
3. Width W of the hot end electric and heat conducting copper blockCu-heatAnd the thickness of the copper sheet is larger than 50 microns, so that the copper sheet has smaller thermal resistance, and heat can be conveniently conducted to the thermal end ceramic substrate.
4. The invention breaks through the limit of the existing thermoelectric arm processing technology on the performance of the thermoelectric arm, and the theoretical calculation shows that the shorter the height of the thermoelectric arm is, the higher the maximum cooling flux is, and the faster the response speed is; the existing processing technology of the thermoelectric arm can not further reduce the height of the thermoelectric arm, so that under the condition of not reducing the height of the thermoelectric arm, the structure of the thermoelectric arm is changed, and a better effect is finally obtained, for example, the maximum refrigerating capacity can be improved by 127.63%, and the response speed is increased by 145.61%.
Drawings
FIG. 1 is a schematic diagram of an L-shaped thermoelectric arm structure provided by the present invention;
FIG. 2 is a dimensional schematic of the components of the L-shaped thermoelectric arm structure of FIG. 1;
FIG. 3 is a schematic diagram of the current flow of the L-shaped hot leg structure of FIG. 1;
FIG. 4 shows the L-shaped thermoelectric arm structure of FIG. 1 and a conventional pi-shaped structure subjected to 25W/cm at the cold end2In the case of thermal load, the refrigeration temperature difference under different input currents;
FIG. 5 is a graph showing the trend of the maximum refrigeration temperature difference between the L-shaped thermoelectric arm structure of FIG. 1 and the conventional Pi-shaped structure when the cold ends are subjected to different thermal loads;
fig. 6 is a graph of the start-up characteristics of the L-shaped hot arm configuration of fig. 1 and a conventional Π -shaped configuration, after application of optimal current, when the cold ends are thermally insulated.
The same reference numbers will be used throughout the drawings to refer to the same or like elements or structures, wherein: 1-cold-end ceramic substrate, 2-cold-end conductive and heat-conductive copper sheet, 3-P type thermoelectric arm, 4-hot-end conductive and heat-conductive copper block, 5-hot-end ceramic substrate and 6-N type thermoelectric arm.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Referring to fig. 1, fig. 2, fig. 3, fig. 4, fig. 5 and fig. 6, the L-shaped thermoelectric arm structure and the semiconductor cooling plate according to the present invention may be used as an independent cooling unit to form a semiconductor cooling plate, or may be combined with a conventional pi-shaped structure to form a semiconductor cooling plate to optimize performance.
The thermoelectric arm structure comprises a cold-end ceramic substrate 1, a cold-end electric and heat conducting copper sheet 2, a P-type thermoelectric arm 3, a hot-end electric and heat conducting copper block 4, a hot-end ceramic substrate 5 and an N-type thermoelectric arm 6. The P-type thermoelectric arm 3, the N-type thermoelectric arm 6 and the hot-side electric and heat conduction copper block 4 are respectively arranged on the surface of the hot-side ceramic substrate 5 facing the cold-side ceramic substrate 1, the P-type thermoelectric arm 3 and the N-type thermoelectric arm 6 are arranged along a first direction, the hot-side electric and heat conduction copper block 4 is arranged along a second direction parallel to the first direction, and the side surface of the P-type thermoelectric arm 3 and the side surface of the N-type thermoelectric arm 6 are connected with the side surface of the hot-side electric and heat conduction copper block 4.
The cold-end electric and heat conducting copper sheet 2 is arranged on the surface of the P-type thermoelectric arm 3 facing the cold-end ceramic substrate 1 and the surface of the N-type thermoelectric arm 6 facing the cold-end ceramic substrate 1, and the cold-end electric and heat conducting copper sheet 2 is connected with the cold-end ceramic substrate 1, the P-type thermoelectric arm 3 and the N-type thermoelectric arm 6.
In this embodiment, the cold-end electrically and thermally conductive copper sheet 2, the P-type thermoelectric arm 3, the N-type thermoelectric arm 6, and the hot-end electrically and thermally conductive copper block 4 form an L-shaped structure; the resistance at the included angle formed by the cold end electric and heat conduction copper sheet 2 and the hot end electric and heat conduction copper block 4 is minimum, so that the current flows in an L shape in the thermoelectric arm instead of flowing along a straight line in the thermoelectric arm in an n-shaped structure, the flowing length of the current can be reduced on the premise of not changing the size of the thermoelectric arm, the performance similar to that of a thin film thermoelectric arm is realized, and larger refrigerating capacity can be obtained.
The hot-end electric-heat-conducting copper block 4 is placed on the side faces of the P-type thermoelectric arm 3 and the N-type thermoelectric arm 6, and the P-type thermoelectric arm 3 and the N-type thermoelectric arm 6 which correspond to the hot-end electric-heat-conducting copper block are in contact with the thermoelectric electric-heat-conducting copper sheet 4 and are also in direct contact with the hot-end ceramic substrate 5, so that part of heat can be directly transferred to the hot-end ceramic substrate 5, the hot-end heat dissipation area is increased, and the heat dissipation condition of the thermoelectric arm structure is optimized.
In this embodiment, the width W of the hot-end electrically and thermally conductive copper block 4 should be usedCu-a copper block with a greater heat to enhance heat transfer, preferably with a width greater than 50 microns; the hot end is conductive to electricity and heatHeight H of copper block 4Cu-the heat recommendation is equal to or slightly less than the height of the P-type thermoelectric legs 3 and the height H of the N-type thermoelectric legs 6TE(ii) a The shape and the size of the P-type thermoelectric arm 3 are consistent with those of the N-type thermoelectric arm 6.
The section width W of the cold end electric and heat conduction copper sheet 2CuThe cold recommendation is equal to or slightly smaller than the cross-sectional width W of the P-type and N-type thermoelectric legs 3, 6TEThe cold end electric and heat conduction copper sheet 2 is not in contact with the hot end electric and heat conduction copper block 4 so as to avoid short circuit; width W of cold end electric and heat conduction copper sheet 2CuCold preferably does not exceed 1.5 mm to ensure good results.
In the embodiment, the hot-end electric and heat conducting copper block 4 in the thermoelectric arm structure is designed, and the thickened hot-end electric and heat conducting copper block 4 is arranged on the side face of the thermoelectric arm to form an L-shaped structure, so that the flow path of current and heat is optimized, the heat dissipation condition of the thermoelectric arm structure is improved, and in practical application, small-size heat sources and hot spots can be independently cooled, and the thermoelectric arm structure can also be combined with a traditional Pi-shaped structure to optimize the performance of a thermoelectric refrigerating device.
The semiconductor refrigeration is carried out based on the thermoelectric conversion effect, and compared with the traditional thermoelectric arm structure, the position of the hot-end electric and heat conducting copper block is optimized, so that the cooling flux and the response speed of the thermoelectric arm are greatly improved under the condition of not changing the manufacturing process of the thermoelectric arm.
In this embodiment, the P-type thermoelectric arm 3, the N-type thermoelectric arm 6, and the hot-side electrically and thermally conductive copper block 4 are rectangular; the number of the cold-end electric and heat conduction copper sheets 2 is one; the number of the hot-end electric and heat conducting copper blocks 4 is two, and the two hot-end electric and heat conducting copper blocks 4 are arranged at intervals; it is understood that in other embodiments, the number of the cold-end copper sheets 2 and the hot-end copper blocks 4 may be increased or decreased according to actual needs.
Example 1
Inventive example 1 compares the L-shaped thermoelectric leg configuration and the size of the thermoelectric legs to 0.3mm 0.4mm while maintaining the same thermoelectric leg sizeThe traditional Pi-shaped structure thermoelectric arm bears 25W/cm at the cold end2In the thermal load condition, the refrigerating temperature difference under different input currents is calculated, and the calculation result proves that the refrigerating temperature difference of the L-shaped thermoelectric arm can be improved by 41.30K compared with that of the thermoelectric arm with the traditional n-shaped structure under the condition that the size and the load of the thermoelectric arm are not changed.
Example 2
In the embodiment 2 of the present invention, under the condition that the size of the thermoelectric arm is kept to be 0.3mm x 0.4mm, the maximum refrigeration temperature difference that can be obtained by the thermoelectric arm when the thermoelectric arm with the L-shaped structure and the thermoelectric arm with the traditional pi-shaped structure bear different thermal loads at the cold end is compared, and the calculation structure proves that the maximum cooling flux of the thermoelectric arm with the L-shaped structure can be increased by 127.63% compared with that of the thermoelectric arm with the traditional pi-shaped structure under the condition that the size of the thermoelectric arm is not changed.
Example 3
In the case of keeping the size of the thermoelectric arm to be 0.3mm x 0.4mm, the example 3 of the present invention compares the starting characteristic curves of the L-shaped thermoelectric arm structure and the thermoelectric arm with the traditional pi-shaped structure under the condition of cold end heat insulation, and the calculation result proves that, under the condition of keeping the size of the thermoelectric arm unchanged, the thermoelectric arm with the L-shaped structure has a faster response and a starting speed increased by 145.61% compared with the thermoelectric arm with the traditional pi-shaped structure.
The invention also provides a semiconductor refrigerating sheet which comprises the L-shaped thermoelectric arm structure. In another embodiment, the semiconductor refrigeration chip may further include a Π -shaped thermoelectric arm structure, and the L-shaped thermoelectric arm structure is disposed opposite to the Π -shaped thermoelectric arm structure.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. An L-shaped semiconductor thermoelectric arm structure is characterized in that:
the thermoelectric arm structure is L-shaped and comprises a cold-end ceramic substrate (1), a cold-end electric and heat conducting copper sheet (2), a P-type thermoelectric arm (3), a hot-end electric and heat conducting copper block (4), a hot-end ceramic substrate (5) and an N-type thermoelectric arm (6), wherein the P-type thermoelectric arm (3), the N-type thermoelectric arm (6) and the hot-end electric and heat conducting copper block (4) are respectively arranged on the surface of the hot-end ceramic substrate (5) facing the cold-end ceramic substrate (1); the cold-end electric and heat conducting copper sheet (2) is arranged on the P-type thermoelectric arm (3) and the N-type thermoelectric arm (6), and the cold-end ceramic substrate (1) is arranged on the cold-end electric and heat conducting copper sheet (2);
the cold-end electric and heat conduction copper sheet (2), the P-type thermoelectric arm (3), the N-type thermoelectric arm (6) and the hot-end electric and heat conduction copper block (4) form an L-shaped structure, the hot-end electric and heat conduction copper block (4) is placed on the side faces of the P-type thermoelectric arm (3) and the N-type thermoelectric arm (6), and the P-type thermoelectric arm (3) and the N-type thermoelectric arm (6) which correspond to the hot-end electric and heat conduction copper block are in direct contact with the hot-end electric and heat conduction copper block (4) and are also in direct contact with the hot-end ceramic substrate (5).
2. The L-shaped semiconductor hot arm structure of claim 1, wherein: the width W of the hot end electric and heat conducting copper block (4)Cu-heatGreater than 50 microns.
3. The L-shaped semiconductor hot arm structure of claim 1, wherein: the height H of the hot-end electric and heat conducting copper block (4)Cu-heatLess than or equal to the height H of the P-type thermoelectric arm (3)TE。
4. An L-shaped semiconductor hot arm structure according to claim 3, characterized in that: the height of the P-type thermoelectric arm (3) is equal to that of the N-type thermoelectric arm (6).
5. The L-shaped semiconductor hot arm structure of claim 1, wherein: the shape and the size of the P-type thermoelectric arm (3) are consistent with those of the N-type thermoelectric arm (6).
6. The L-shaped semiconductor hot arm structure of claim 5, wherein: the cold endThe cross section width W of the electric and heat conducting copper sheet (2)Cu-coldThe cross-sectional width W of the N-type thermoelectric arm (6) is less than or equal toTE。
7. An L-shaped semiconductor thermoelectric arm structure as in any of claims 1 to 6, wherein: the P-type thermoelectric arm (3) and the N-type thermoelectric arm (6) are arranged along a first direction, the hot-end electric and heat conduction copper block (4) is arranged along a second direction parallel to the first direction, and the side face of the P-type thermoelectric arm (3) and the side face of the N-type thermoelectric arm (6) are respectively connected with the side face of the hot-end electric and heat conduction copper block (4).
8. An L-shaped semiconductor thermoelectric arm structure as in any of claims 1 to 6, wherein: the width W of the cold end electric and heat conduction copper sheet (2)Cu-coldLess than or equal to 1.5 mm.
9. A semiconductor refrigeration piece is characterized in that: the semiconductor chilling plate comprises an L-shaped semiconductor thermoelectric arm structure as claimed in any one of claims 1-8.
10. The semiconductor chilling plate of claim 9, wherein: the semiconductor refrigerating plate further comprises an n-shaped structure thermoelectric arm, and the n-shaped structure thermoelectric arm and the L-shaped semiconductor thermoelectric arm are oppositely arranged.
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| CN103134229A (en) * | 2013-03-01 | 2013-06-05 | 南京航空航天大学 | Multipurpose transverse heat guiding temperature control module and temperature control system |
| WO2014160033A1 (en) * | 2013-03-14 | 2014-10-02 | Gmz Energy Inc. | Thermoelectric module with flexible connector |
| WO2014200884A1 (en) * | 2013-06-10 | 2014-12-18 | Gmz Energy Inc. | Thermoelectric module and method of making same |
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| US5712448A (en) * | 1996-02-07 | 1998-01-27 | California Institute Of Technology | Cooling device featuring thermoelectric and diamond materials for temperature control of heat-dissipating devices |
| CN2311734Y (en) * | 1997-09-30 | 1999-03-24 | 郑万烈 | Thermoelectric semi-conductor cold-hot head apparatus |
| CN103134229A (en) * | 2013-03-01 | 2013-06-05 | 南京航空航天大学 | Multipurpose transverse heat guiding temperature control module and temperature control system |
| WO2014160033A1 (en) * | 2013-03-14 | 2014-10-02 | Gmz Energy Inc. | Thermoelectric module with flexible connector |
| WO2014200884A1 (en) * | 2013-06-10 | 2014-12-18 | Gmz Energy Inc. | Thermoelectric module and method of making same |
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