CN111403583A - Preparation method of heat dissipation film and display device - Google Patents

Preparation method of heat dissipation film and display device Download PDF

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Publication number
CN111403583A
CN111403583A CN202010201185.8A CN202010201185A CN111403583A CN 111403583 A CN111403583 A CN 111403583A CN 202010201185 A CN202010201185 A CN 202010201185A CN 111403583 A CN111403583 A CN 111403583A
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substrate
heat dissipation
solution
display device
film
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查宝
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TCL China Star Optoelectronics Technology Co Ltd
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TCL China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/87—Arrangements for heating or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The embodiment of the invention discloses a preparation method of a heat dissipation film and a display device, wherein the preparation method of the heat dissipation film comprises the following steps: preparing a first solution; providing a substrate, and cleaning the substrate in the first solution for a first preset time to obtain an organic film on the surface of the substrate; drying the cleaned substrate; coating a second solution on the organic film; and baking the organic film coated with the second solution at a preset temperature for a second preset time to obtain the heat dissipation film. According to the embodiment of the application, the heat dissipation film is prepared and applied to the display device, so that the heat conductivity coefficient of the substrate of the display device is improved, the normal use of the display device is ensured, and the service life of the display device is prolonged.

Description

Preparation method of heat dissipation film and display device
Technical Field
The invention relates to the technical field of display, in particular to a preparation method of a heat dissipation film and a display device.
Background
With the development of Display technologies, O L ED (Organic light Emitting Diode) and Micro L ED (Micro light Emitting Diode) with excellent color and performance have been considered as next generation Display technologies to replace L CD (L i quick Crystal Display), but both technologies are active light Emitting, and as the resolution increases, the requirement of RGB light Emitting elements per unit area increases, so that the heat generated per unit area increases, and the generated heat needs to be diffused in time in order not to affect the normal use and service life of the Display device, whereas currently, Micro ED 2 387 and O L ED generally use glass as a substrate, and the thermal conductivity of glass is generally less than 1W/(m K), so that the heat resistance of the Display device is poor, and the normal use and service life of the Display device are affected.
Therefore, a preparation method of a heat dissipation film and a display device are urgently needed to solve the technical problems that the normal use of the display device is influenced and the service life of the display device is low due to the fact that the heat conductivity coefficient of a substrate is not high in the prior art.
Disclosure of Invention
The embodiment of the invention provides a preparation method of a heat dissipation film and a display device.
The application provides a preparation method of a heat dissipation film, which comprises the following steps:
preparing a first solution;
providing a substrate, and cleaning the substrate in the first solution for a first preset time to obtain an organic film on the surface of the substrate;
drying the cleaned substrate;
coating a second solution on the organic film;
and baking the organic film coated with the second solution at a preset temperature for a second preset time to obtain the heat dissipation film.
In some embodiments of the present application, the solute of the first solution is ethanol and the solvent is deionized water.
In some embodiments of the present application, the substrate is further irradiated by extreme ultraviolet light while being washed in the first solution for a first preset time period.
In some embodiments of the present application, the solute of the second solution is an organosilane, and the solvent is one or more of toluene, xylene, pentane, hexane, octane, cyclohexane, cyclohexanone, diethyl ether, propylene oxide, chlorobenzene, dichlorobenzene, dichloromethane, isopropanol, methyl acetate, ethyl acetate, propyl acetate, acetonitrile, pyridine.
In some embodiments of the present application, the volume ratio of the solute to the solvent in the second solution is 1:1 to 1: 4.
In some embodiments of the present application, the organosilane is of the formula:
Figure BDA0002419436250000021
wherein n represents carbon chains with different lengths, and R is one of a chain containing ester groups, an F-substituted alkane derivative, a conjugated structure connected through alkoxy and ester groups, and a conjugated structure containing heterocyclic compounds.
In some embodiments of the present application, the heterocyclic compound is one of a five-membered heterocyclic compound, a six-membered heterocyclic compound, a benzo-heterocyclic compound.
An embodiment of the present invention further provides a display device, including:
a substrate;
the heat dissipation film is arranged on the substrate;
a functional layer disposed on the heat dissipation film;
wherein, the heat dissipation film is prepared by adopting the preparation method of the heat dissipation film in any embodiment.
In some embodiments of the present application, the functional layer comprises:
the thin film transistor layer is arranged on the heat dissipation film;
a light emitting layer disposed on the thin film transistor layer;
and a plurality of pixel electrodes disposed in the light emitting layer.
In some embodiments of the present application, the functional layer comprises:
the n-type gallium nitride layer is arranged on the heat dissipation film;
a plurality of light emitting cells disposed on the n-type gallium nitride layer;
a plurality of pixel electrodes disposed on the plurality of light emitting cells; each electrode corresponds to each light-emitting unit one by one.
In the embodiment of the invention, the heat dissipation film is prepared and applied to the display device, so that the heat conductivity coefficient of the substrate of the display device is improved, and the technical problems that the normal use of the display device is influenced and the service life of the display device is short due to the fact that the heat conductivity coefficient of the substrate is not high in the prior art are solved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a flowchart illustrating a method for fabricating a heat dissipation film according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a heat dissipation film prepared by the method for preparing a heat dissipation film according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of an O L ED display device according to a second embodiment of the present invention;
fig. 4 is a schematic structural diagram of a Micro L ED display device according to a second embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In this application, the word "exemplary" is used to mean "serving as an example, instance, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is presented to enable any person skilled in the art to make and use the invention. In the following description, details are set forth for the purpose of explanation. It will be apparent to one of ordinary skill in the art that the present invention may be practiced without these specific details. In other instances, well-known structures and processes are not shown in detail to avoid obscuring the description of the invention with unnecessary detail. Thus, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.
The embodiment of the invention provides a preparation method of a heat dissipation film and a display device. The following are detailed below.
Example one
Fig. 1 is a schematic structural diagram of a display module according to an embodiment of the present invention; as shown in fig. 1, the method includes:
step S101, preparing a first solution;
specifically, step S101 includes providing a container, placing the solute and the solvent of the first solution in the container, and mixing them uniformly to obtain the first solution, where the solute of the first solution is ethanol and the solvent is deionized water.
Step S102, providing a substrate, and enabling the substrate to be in a first solution for a first preset time to obtain an organic film on the surface of the substrate;
specifically, the substrate is one of glass, PET (polyester resin), CPI (Colorless polyimide), PEN (Polyethylene naphthalate).
Specifically, the cleaning mode of the substrate in the first solution is ultrasonic cleaning, and the ultrasonic cleaning is to utilize the cavitation, acceleration and direct current action of ultrasonic waves in liquid to directly and indirectly act on the liquid and an object to be cleaned, so that a dirt layer is dispersed, emulsified and stripped to achieve the purpose of cleaning.
Further, while the substrate is cleaned in the first solution for the first preset time period, the substrate is also irradiated by Extreme ultraviolet light (EUV), specifically, Extreme ultraviolet light (EUV) cleaning refers to a technology for providing a light source through which the substrate to be cleaned is cleaned, specifically: the light source emits light waves of 10 nm-14 nm, and when the light waves act on the surface of an object to be cleaned, most of hydrocarbon compounds have strong absorption capacity to ultraviolet light of the wavelength, and after the light waves are absorbed, the number of carboxyl groups formed on the surface of the substrate is increased, so that an organic film is formed on the surface of the substrate.
The first preset time period is 2 minutes to 10 minutes, it should be noted that the first preset time period can be set according to the actual cleaning degree, and preferably, in some embodiments of the present application, the first preset time period is 5 minutes.
Step S103, drying the cleaned substrate;
specifically, the drying the cleaned substrate by blowing includes drying the cleaned substrate by an inert gas.
To reduce manufacturing costs, in some embodiments of the present application, the inert gas is nitrogen.
Step S104, coating a second solution on the organic film;
in some embodiments of the present application, the solute of the second solution is an organosilane and the solvent is one or more of toluene, xylene, pentane, hexane, octane, cyclohexane, cyclohexanone, diethyl ether, propylene oxide, chlorobenzene, dichlorobenzene, dichloromethane, isopropanol, methyl acetate, ethyl acetate, propyl acetate, acetonitrile, pyridine.
Wherein the volume ratio of the solute to the solvent in the second solution is 1: 1-1: 4.
Specifically, in some embodiments herein, the organosilane is of the formula:
Figure BDA0002419436250000051
wherein n represents carbon chains with different lengths, and R is one of a chain containing ester groups, an F-substituted alkane derivative, a conjugated structure connected through alkoxy and ester groups, and a conjugated structure containing heterocyclic compounds.
In some embodiments of the present application, the heterocyclic compound is one of a five-membered heterocyclic compound, a six-membered heterocyclic compound, a benzo-heterocyclic compound. Wherein, the five-membered heterocyclic compound: furan, thiophene, pyrrole, thiazole, imidazole, etc.; a six-membered heterocyclic compound: pyridine, pyrazine, pyrimidine, pyridazine, etc. and fused ring heterocyclic compounds: indole, quinoline, pteridine, acridine, and the like.
And S105, baking the organic film coated with the second solution at a preset temperature for a second preset time to obtain the heat dissipation film.
The second predetermined time period is 25 minutes to 60 minutes, and the predetermined temperature is 100 ℃ to 140 ℃, it being understood that both the predetermined temperature and the second predetermined time period can be adjusted according to the actual situation, in some embodiments of the present application, the predetermined temperature is 120 ℃ and the second predetermined time period is 30 minutes.
As shown in FIG. 2, after the above steps, organosilane can form a highly ordered compact self-assembled structure through Si-O covalent bond with the organic film on the substrate surface, and the compact self-assembled structure is a heat dissipation film, and through tests, the heat conductivity of the heat dissipation film can be 40W/(m K) -120W/(m K), which can reach 120W/(m K) at the highest, and the heat transfer effect is close to the heat conduction effect of the metal material, so that the heat transfer capability of the substrate can be greatly improved.
Example two
An embodiment of the present application provides a display device, which includes:
a substrate; a heat dissipation film disposed on the substrate; a functional layer disposed on the heat dissipation film; wherein, the heat dissipation film is prepared by the preparation method of the heat dissipation film in the embodiment.
Specifically, an embodiment of the present application provides an O L ED display device, as shown in fig. 3, including:
a substrate 310;
a heat dissipation film 320 disposed on the substrate 310, the heat dissipation film 310 being the heat dissipation film prepared by the preparation method of the first embodiment;
a Thin Film Transistor (TFT) layer 330 disposed on the heat dissipation film 320;
a light-emitting layer 340 disposed on thin-film-transistor layer 330; specifically, the method comprises the following steps: the light emitting layer 340 includes a plurality of light emitting units, and in some embodiments of the present application, the light emitting layer includes three light emitting units, respectively, a red light emitting unit 341 for emitting red light, a green light emitting unit 342 for emitting green light, and a blue light emitting unit 343 for emitting blue light;
the pixel electrodes 350, the pixel electrodes 350 correspond to the light emitting units one by one.
It should be understood that the O L ED display device may further include other conventional structures such as a polarizing layer and a protective layer, which are not described in detail again.
The substrate 310 is one of glass, PET, CPI, and PEN.
According to the embodiment of the invention, the substrate in the O L ED display device is set to be the substrate with the heat dissipation film, so that the heat dissipation capability of the substrate is greatly improved, the heat resistance of the O L ED display device is improved, and the user experience and the service life of the O L ED display device are enhanced.
EXAMPLE III
The embodiment of the present application provides a Micro L ED display device, and specifically, as shown in fig. 4, a Micro L ED display panel 400 includes:
a substrate 410;
a heat dissipation film 420 disposed on the substrate 410, the heat dissipation film 410 being the heat dissipation film prepared by the preparation method of the first embodiment;
an n-type gallium nitride (n-GaN) layer 430 disposed on the heat dissipation film 420;
specifically, in some embodiments of the present application, the Micro L ED display device includes three light emitting cells, a red light emitting cell 432 for emitting red light, a green light emitting cell 432 for emitting green light, and a blue light emitting cell 433 for emitting blue light;
a plurality of pixel electrodes 450 disposed on the plurality of light emitting cells 440; each pixel electrode 450 corresponds to each light emitting unit 440.
It should be understood that the Micro L ED display device in the present application may also include a package substrate and other structures, and the Micro L ED display device may be further protected by the package substrate.
According to the embodiment of the invention, the substrate in the Micro L ED display device is set to be the substrate with the heat dissipation film, so that the heat dissipation capability of the substrate is greatly improved, the heat resistance of the Micro L ED display device is improved, the user experience is enhanced, and the service life is prolonged.
It should be noted that the display device is not limited to the display devices proposed in the above two embodiments.
In the embodiment of the invention, the heat dissipation film is prepared and applied to the display device, so that the heat conductivity coefficient of the substrate of the display device is improved, and the technical problems that the normal use of the display device is influenced and the service life of the display device is short due to the fact that the heat conductivity coefficient of the substrate is not high in the prior art are solved.
The preparation method of the heat dissipation film and the display device provided by the invention are described in detail above. It should be understood that the exemplary embodiments described herein should be considered merely illustrative for facilitating understanding of the core concepts of the present invention and not restrictive. Descriptions of features or aspects in each exemplary embodiment should generally be considered as applicable to similar features or aspects in other exemplary embodiments. While the present invention has been described with reference to exemplary embodiments, various changes and modifications may be suggested to one skilled in the art. It is intended that the present invention cover the modifications and variations of this invention provided they come within the spirit and scope of the appended claims and their equivalents and improvements made thereto.

Claims (10)

1. A method for preparing a heat dissipation film is characterized by comprising the following steps:
preparing a first solution;
providing a substrate, and cleaning the substrate in the first solution for a first preset time to obtain an organic film on the surface of the substrate;
drying the cleaned substrate;
coating a second solution on the organic film;
and baking the organic film coated with the second solution at a preset temperature for a second preset time to obtain the heat dissipation film.
2. The method for preparing a heat dissipating film according to claim 1, wherein the solute of the first solution is ethanol and the solvent is deionized water.
3. The method for manufacturing a heat dissipating film according to claim 1, wherein the substrate in the first solution is further irradiated with extreme ultraviolet light while the substrate is washed in the first solution for a first predetermined time.
4. The method for preparing a heat dissipation film according to claim 1, wherein the solute of the second solution is organic silane, and the solvent is one or more of toluene, xylene, pentane, hexane, octane, cyclohexane, cyclohexanone, diethyl ether, propylene oxide, chlorobenzene, dichlorobenzene, dichloromethane, isopropanol, methyl acetate, ethyl acetate, propyl acetate, acetonitrile, and pyridine.
5. The method for preparing the heat dissipation film according to claim 4, wherein the volume ratio of the solute to the solvent in the second solution is 1:1 to 1: 4.
6. The method for producing a heat dissipating film according to claim 4, wherein the organosilane has a formula of:
Figure FDA0002419436240000011
wherein n represents carbon chains with different lengths, and R is one of a chain containing ester groups, an F-substituted alkane derivative, a conjugated structure connected through alkoxy and ester groups, and a conjugated structure containing heterocyclic compounds.
7. The method for producing a heat dissipating film according to claim 6, wherein the heterocyclic compound is one of a five-membered heterocyclic compound, a six-membered heterocyclic compound, and a benzo-heterocyclic compound.
8. A display device, comprising:
a substrate;
the heat dissipation film is arranged on the substrate;
a functional layer disposed on the heat dissipation film;
wherein the heat dissipating film is produced by the method for producing a heat dissipating film according to any one of claims 1 to 7.
9. The display device according to claim 8, wherein the functional layer comprises:
the thin film transistor layer is arranged on the heat dissipation film;
a light emitting layer disposed on the thin film transistor layer;
and a plurality of pixel electrodes disposed in the light emitting layer.
10. The display device according to claim 8, wherein the functional layer comprises:
the n-type gallium nitride layer is arranged on the heat dissipation film;
a plurality of light emitting cells disposed on the n-type gallium nitride layer;
a plurality of pixel electrodes disposed on the plurality of light emitting cells; each electrode corresponds to each light-emitting unit one by one.
CN202010201185.8A 2020-03-20 2020-03-20 Preparation method of heat dissipation film and display device Pending CN111403583A (en)

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CN108288666A (en) * 2018-01-26 2018-07-17 扬州乾照光电有限公司 A kind of light emitting diode and electronic equipment of included radiator structure
CN208847857U (en) * 2018-07-27 2019-05-10 华显光电技术（惠州）有限公司 Reflector plate, backlight module, liquid crystal display die set and intelligent terminal
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CN109903678A (en) * 2017-12-11 2019-06-18 乐金显示有限公司 Display device and rollable display system
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CN110660761A (en) * 2018-06-28 2020-01-07 丰田自动车株式会社 Thermally conductive structure or semiconductor device
CN208847857U (en) * 2018-07-27 2019-05-10 华显光电技术（惠州）有限公司 Reflector plate, backlight module, liquid crystal display die set and intelligent terminal
JP2020042259A (en) * 2018-09-05 2020-03-19 大日本印刷株式会社 Display device

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