CN111403578B - Method for packaging deep ultraviolet LED chip by magnetron sputtering - Google Patents
Method for packaging deep ultraviolet LED chip by magnetron sputtering Download PDFInfo
- Publication number
- CN111403578B CN111403578B CN202010189752.2A CN202010189752A CN111403578B CN 111403578 B CN111403578 B CN 111403578B CN 202010189752 A CN202010189752 A CN 202010189752A CN 111403578 B CN111403578 B CN 111403578B
- Authority
- CN
- China
- Prior art keywords
- magnetron sputtering
- deep ultraviolet
- ultraviolet led
- led chip
- packaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 33
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims description 13
- 239000000463 material Substances 0.000 claims abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 229910017109 AlON Inorganic materials 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 7
- 230000005496 eutectics Effects 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 4
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 4
- 238000005336 cracking Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- -1 oxygen ions Chemical class 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000002834 transmittance Methods 0.000 abstract description 6
- 239000011324 bead Substances 0.000 abstract description 3
- 239000013077 target material Substances 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 20
- 239000010409 thin film Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 238000004659 sterilization and disinfection Methods 0.000 description 4
- 239000005416 organic matter Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 230000001954 sterilising effect Effects 0.000 description 3
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses an AlN and SiN film material with high ultraviolet transmittance deposited on a target material in a magnetron sputtering mode, which is used for isolating a chip from being in contact with air and water so as to achieve the purpose of packaging a deep ultraviolet LED chip. The technical scheme of the invention aims to maintain the air tightness and stability of the packaging structure and prolong the service life of the lamp bead.
Description
Technical Field
The invention relates to the technical field of LED chip packaging, in particular to a method for packaging a deep ultraviolet LED chip by magnetron sputtering.
Background
The deep ultraviolet LED has the functions of sterilization and disinfection. Has wide application in water sterilization, air sterilization and surface sterilization. At present, the deep ultraviolet LED is mainly packaged organically in the market, namely, an organic adhesive or a mixture of the organic adhesive and gold and tin is used between a support and quartz glass for gluing in a reflow soldering mode and the like. And because of the characteristics of ultraviolet light, the organic matter adhesive in the packaging structure is easy to age and lose viscosity under the irradiation of the ultraviolet light, so that the quartz glass and the bracket are not firmly bonded, the air tightness is reduced, even the quartz glass falls off, and the service life of the lamp bead is shortened. In addition, an all-inorganic packaging mode begins to appear in the market, namely gold and tin are filled between the support and the quartz glass, and a gold and tin eutectic crystal is formed in a reflow soldering mode. This approach is limited by material differences and the gas tightness is not stable.
Disclosure of Invention
The invention mainly aims to provide a method for packaging a deep ultraviolet LED chip by magnetron sputtering, aiming at maintaining the air tightness and stability of a packaging structure and prolonging the service life of a lamp bead.
In order to achieve the above object, the present invention relates to a method for packaging a deep ultraviolet LED chip by magnetron sputtering, comprising the following steps:
s1, laying a gold-tin alloy layer on an electrode of a ceramic packaging support through a dispenser, attaching the electrode of the deep ultraviolet LED chip to the electrode of the ceramic packaging support, and putting the attached deep ultraviolet LED chip and the whole ceramic packaging support into an eutectic furnace for high-temperature annealing;
s2, putting the annealed whole body into a magnetron sputtering device equipped with a Si metal target and a nitrogen source, wherein the magnetron sputtering device works and is heated to 150-250 ℃ to form a SiN film with the thickness of 40-60 mu m on the whole body;
s3, putting the whole body deposited with the SiN film into a magnetron sputtering device provided with an Al metal target and a nitrogen source, wherein the magnetron sputtering device works and is heated to 150-250 ℃, and a layer of AlN film with the thickness of 80-120 mu m is formed on the SiN film;
s4, putting the whole deposited AlN film into a magnetron sputtering device provided with an oxygen source, and heating the magnetron sputtering device to 150-250 ℃ to promote the AlN film to be oxidized to form an AlON ternary mixed crystal layer;
s5, repeating the steps S3 and S4 for 2-4 periods.
Preferably, the step S5 is repeated for a period of 3.
Preferably, the SiN thin film has a thickness of 50 μm.
Preferably, the AlN thin film has a thickness of 100 μm.
The technical scheme of the invention has the advantages that: a traditional quartz plate for packaging the LED is omitted, and the material cost is reduced; gold and tin for packaging and organic matter adhesive materials are saved, the material cost is reduced, and the problems of reduced bonding effect and reduced air tightness caused by the fact that the deep ultraviolet LED is easy to age organic matters are solved; the AlN film and the AlON film have good light transmittance and heat conductivity to the deep ultraviolet light, so that the light emitting efficiency of the deep ultraviolet LED is improved, and the heat dissipation efficiency of the deep ultraviolet LED is improved; the SiN film is deposited, so that light transmittance of deep ultraviolet light is guaranteed, and meanwhile the problem that Al atoms in the AlN film are aggregated and bridged with positive and negative electrodes to cause chip short circuit due to process problems and the like is effectively avoided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic flow diagram of the present invention;
the implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The method adopts a magnetron sputtering mode to deposit AlN and SiN film materials with high ultraviolet transmittance on a target material (namely an LED chip welded on a support), so as to isolate the chip from contacting with air and water, and achieve the purpose of packaging the deep ultraviolet LED chip.
The specific mode is as follows:
the first step is as follows: coating a gold-tin alloy material on the electrode position of the ceramic packaging support 101 through a dispenser, then attaching the electrode of the deep ultraviolet LED chip 102 to the corresponding electrode of the ceramic packaging support 101, putting the whole body into an eutectic furnace for high-temperature annealing after the attachment, cooling the gold-tin material after the high-temperature annealing to form a compact crystal mixture, and firmly bonding the chip and the support.
The second step is that: the welded deep ultraviolet LED chip 102 and the bracket are placed in a magnetron sputtering device, the device is also provided with a Si metal target material and a nitrogen source, and nitrogen plasma formed by cracking the nitrogen plasma is filled in a magnetron sputtering cavity. Under the temperature of 150 ℃ and 250 ℃, the equipment generates high-energy ions, the Si target is accelerated and bombarded by an electric field, and the sputtered Si ions react with nitrogen ions to generate SiN which is deposited on the chip and the bracket. After a certain period of time, a SiN film 103 of about 50 μm (40-60 μm) is deposited thereon.
The third step: and putting the chip and the support on which the SiN film 103 is deposited into a magnetron sputtering device provided with an Al metal target. An AlN thin film 104 having a thickness of about 100 μm (80 to 120 μm) is deposited on the SiN thin film 103 in the same manner as in the second step.
The fourth step: the deep ultraviolet LED chip 102 with the deposited AlN film 104 and the support are placed in a magnetron sputtering device, oxygen plasma formed by oxygen plasma cracking is filled in a magnetron sputtering reaction cavity, and heat preservation is carried out for a period of time at the temperature of 150-.
The fifth step: repeating the third and fourth steps for 2-4 cycles.
Specifically, as shown in fig. 1, the bonded deep ultraviolet LED chip 102 and the ceramic package support 101 are connected firmly by eutectic soldering in an eutectic furnace; putting the whole into a magnetron sputtering device provided with a Si metal target and a nitrogen source to deposit a SiN film 103, and then putting the whole into a magnetron sputtering device provided with an Al metal target and a nitrogen source to deposit an AlN film 104; then placing the AlN thin film into a magnetron sputtering device provided with an oxygen source to promote the AlN thin film 104 to be oxidized to form an AlON ternary mixed crystal layer 105; finally, repeatedly depositing an AlN thin film 104 and then oxidizing the AlN thin film to finally form a 3-5 AlON ternary mixed crystal layer 105.
The technical scheme of the invention has the advantages that: a traditional quartz plate for packaging the LED is omitted, and the material cost is reduced; gold and tin for packaging and organic matter adhesive materials are saved, the material cost is reduced, and the problems of reduced bonding effect and reduced air tightness caused by the fact that the deep ultraviolet LED is easy to age organic matters are solved; the AlN film 104 and the AlON film have good light transmittance and heat conductivity to the deep ultraviolet light, so that the light emitting efficiency of the deep ultraviolet LED is improved, and the heat dissipation efficiency of the deep ultraviolet LED is improved; the SiN film 103 is deposited, so that light transmittance of deep ultraviolet light is guaranteed, and meanwhile the problem that due to process problems and the like, Al atoms in the AlN film 104 are agglomerated and bridge positive and negative electrodes to cause short circuit of chips is effectively avoided.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (4)
1. A method for packaging a deep ultraviolet LED chip by magnetron sputtering is characterized by comprising the following steps:
s1, a gold-tin material layer is laid on an electrode of the ceramic packaging support through a glue dispenser, the electrode of the deep ultraviolet LED chip is attached to the electrode of the ceramic packaging support, and the attached deep ultraviolet LED chip and the whole ceramic packaging support are placed in an eutectic furnace for high-temperature annealing;
s2, putting the annealed whole body into a magnetron sputtering device equipped with a Si metal target and a nitrogen source, wherein the magnetron sputtering device works and is heated to 150-250 ℃ to form a SiN film with the thickness of 40-60 mu m on the whole body;
s3, putting the whole body deposited with the SiN film into a magnetron sputtering device provided with an Al metal target and a nitrogen source, wherein the magnetron sputtering device works and is heated to 150-250 ℃, and a layer of AlN film with the thickness of 80-120 mu m is formed on the SiN film;
s4, putting the whole deposited AlN film into a magnetron sputtering device provided with an oxygen source, and heating the magnetron sputtering device to 150-250 ℃ to promote the AlN film to be oxidized to form an AlON ternary mixed crystal layer; placing the deep ultraviolet LED chip with the deposited AlN film and the support in a magnetron sputtering device, filling an oxygen plasma formed by oxygen plasma cracking into a magnetron sputtering reaction cavity, and preserving the heat at the temperature of 150-250 ℃ for a period of time to ensure that oxygen ions are bonded with Al ions which are not completely bonded in the amorphous AlN film, so as to promote the oxidation of the amorphous AlN film to form an AlON ternary mixed crystal layer;
s5, repeating the steps S3 and S4 for 2-4 periods.
2. The method for packaging a deep ultraviolet LED chip using magnetron sputtering as claimed in claim 1, wherein the step S5 is repeated for a period of 3.
3. The method for packaging a deep ultraviolet LED chip using magnetron sputtering as claimed in claim 1, wherein the SiN film has a thickness of 50 μm.
4. The method for packaging a deep ultraviolet LED chip by magnetron sputtering as claimed in claim 1, wherein the AlN film has a thickness of 100 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010189752.2A CN111403578B (en) | 2020-03-17 | 2020-03-17 | Method for packaging deep ultraviolet LED chip by magnetron sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010189752.2A CN111403578B (en) | 2020-03-17 | 2020-03-17 | Method for packaging deep ultraviolet LED chip by magnetron sputtering |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111403578A CN111403578A (en) | 2020-07-10 |
| CN111403578B true CN111403578B (en) | 2021-04-06 |
Family
ID=71432574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010189752.2A Active CN111403578B (en) | 2020-03-17 | 2020-03-17 | Method for packaging deep ultraviolet LED chip by magnetron sputtering |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111403578B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106981562A (en) * | 2017-03-30 | 2017-07-25 | 深圳市华星光电技术有限公司 | Quantum dot LED encapsulation structure |
| CN108389951A (en) * | 2018-02-13 | 2018-08-10 | 马鞍山杰生半导体有限公司 | A kind of deep ultraviolet LED encapsulation structure and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1926154B1 (en) * | 2006-11-21 | 2019-12-25 | Nichia Corporation | Semiconductor light emitting device |
| JP2016027610A (en) * | 2014-06-27 | 2016-02-18 | 旭硝子株式会社 | Package substrate, package, and electronic device |
-
2020
- 2020-03-17 CN CN202010189752.2A patent/CN111403578B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106981562A (en) * | 2017-03-30 | 2017-07-25 | 深圳市华星光电技术有限公司 | Quantum dot LED encapsulation structure |
| CN108389951A (en) * | 2018-02-13 | 2018-08-10 | 马鞍山杰生半导体有限公司 | A kind of deep ultraviolet LED encapsulation structure and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111403578A (en) | 2020-07-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN209896097U (en) | Deep ultraviolet LED all-inorganic airtight packaging structure | |
| CN102154010B (en) | Photo-enhancement photoluminescence material as well as preparation method and application thereof | |
| JP6339652B1 (en) | Manufacturing method of optical semiconductor device | |
| US6724143B2 (en) | Packaging structure for a display device | |
| JP4465989B2 (en) | Light emitting diode element | |
| CN106935695A (en) | A kind of uv-LED device | |
| TWI328293B (en) | Light emitting diode and wafer level package method, wafer level bonding method thereof and circuit structure for wafer level package | |
| TW201246616A (en) | Method of light emitting diode die-bonding with magnetic field | |
| CN104282831B (en) | A kind of LED encapsulation structure and packaging technology | |
| CN102361056A (en) | High brightness large power light emitting diode and manufacture method thereof | |
| WO2018205694A1 (en) | Wavelength conversion device and phosphor-converted laser light source | |
| CN111403578B (en) | Method for packaging deep ultraviolet LED chip by magnetron sputtering | |
| CN110401989B (en) | Method for improving working stability of thin film electrode outgoing line on microcrystalline glass substrate | |
| CN103836409A (en) | LED light source and manufacturing method thereof | |
| CN114927456A (en) | Transfer method of micro light-emitting diode chip | |
| CN203503708U (en) | Sapphire base LED encapsulation structure | |
| CN101140963A (en) | Method for enhancing upside-down mounting welding core plate brightness | |
| KR102421332B1 (en) | Material for synthetic quartz glass lid, synthetic quartz glass lid, and method for preparing thereof | |
| CN100495644C (en) | Method for manufacturing a semiconductor substrate and method for manufacturing an electro-optical device | |
| FI78211B (en) | ELEKTROLUMINESCENSANORDNING OCH FOERFARANDE FOER DESS TILLVERKNING. | |
| JP2012148942A (en) | Glass, glass-coating material for light emitting deice, and light emitting device | |
| CN202030697U (en) | Light intensified photoluminescence sheet and light intensified luminous diode | |
| CN206758466U (en) | A kind of uv-LED device | |
| CN211555928U (en) | Wafer carrier plate device for preparing CSP device | |
| CN110164774A (en) | Ceramic substrate component and its manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |