CN111384898A - Multimode schottky frequency doubling structure - Google Patents

Multimode schottky frequency doubling structure Download PDF

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Publication number
CN111384898A
CN111384898A CN202010265463.6A CN202010265463A CN111384898A CN 111384898 A CN111384898 A CN 111384898A CN 202010265463 A CN202010265463 A CN 202010265463A CN 111384898 A CN111384898 A CN 111384898A
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circuit
schottky
multimode
microstrip
harmonic
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CN111384898B (en
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田遥岭
何月
蒋均
黄昆
陈鹏
李理
岑冀娜
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Institute of Electronic Engineering of CAEP
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/16—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source using uncontrolled rectifying devices, e.g. rectifying diodes or Schottky diodes

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Abstract

The invention discloses a multimode Schottky frequency doubling structure, which comprises an input waveguide matching structure, two Schottky diodes, a T-shaped suspension microstrip circuit and an output probe structure, wherein the input waveguide matching structure is provided with a plurality of Schottky diodes; the waveguide matching structure is used for matching circuit input impedance, and the two Schottky diodes are respectively and relatively adhered to the microstrip line at the bifurcation of the T-shaped suspension microstrip circuit; the suspended microstrip circuit comprises an impedance matching circuit and a suspended microstrip T-shaped junction, and the second harmonic and the third harmonic of the Schottky diode are shunted through the suspended microstrip T-shaped junction and are output in two paths. The invention can omit the complex matched filter circuit at the output end by utilizing the harmonic suppression characteristic, thereby reducing the power consumed in the matched filter circuit; and secondly, the dual-band output characteristic of the circuit can greatly simplify the complexity and cost of a link and provide homologous second harmonic and third harmonic for the communication and imaging application fields.

Description

Multimode schottky frequency doubling structure
Technical Field
The invention belongs to the field of design of terahertz frequency band Schottky diode frequency multipliers, and particularly relates to a multimode Schottky frequency multiplier structure.
Background
The multi-mode and multi-band millimeter wave product has wide application in the fields of mobile communication, radar systems and the like. Devices such as multi-passband antennas, filters, amplifiers, etc. are currently undergoing tremendous development. The current mainstream schottky frequency multiplier circuit belongs to the circuit design of a single frequency band, and the power output of the second harmonic or the third harmonic is realized by utilizing the characteristics of the circuit.
The conventional balanced frequency doubler adopts the mode isolation of parallel diodes and transmission lines to realize the suppression of odd harmonics and the output of second harmonics, as shown in fig. 1. Similarly, the conventional frequency tripler almost adopts a circuit to suppress even harmonics and realize single odd harmonic output. However, when multiple local oscillator signals are required, the single-output frequency multiplier circuit doubles the link, so that the size, complexity and cost of the circuit are doubled.
Disclosure of Invention
The invention provides a multimode Schottky frequency doubling structure for overcoming the technical defects, and the structure is not used for simply inhibiting odd harmonics or even harmonics, but different output paths are provided for second harmonics and third harmonics, so that a frequency multiplier circuit simultaneously has output ports of the second harmonics and the third harmonics, a multimode working mode for simultaneously outputting the second harmonics and the third harmonics is realized, and the homologous second harmonics and third harmonics can be obtained.
The technical scheme of the invention is as follows:
a multimode Schottky frequency doubling structure is characterized in that: the device comprises an input waveguide matching structure, a T-shaped suspension microstrip circuit and an output probe structure;
the input waveguide matching structure is used for matching input impedance of a circuit;
the T-shaped suspension microstrip circuit comprises a suspension microstrip T-shaped junction circuit and an impedance matching circuit, two opposite Schottky diodes are bonded on a microstrip line at the branch of the suspension microstrip T-shaped junction circuit, and the two Schottky diodes comprise a first diode and a second diode; one end of the first diode is grounded, and one end of the second diode is virtually grounded on the microstrip line through an open-circuit branch line; the suspension microstrip T-shaped junction is used for shunting and outputting the second harmonics of the two Schottky diodes along the direction of the impedance matching circuit and shunting and outputting the third harmonics of the two Schottky diodes along the open-circuit branch line.
The waveguide of the input waveguide matching structure is processed by metal such as aluminum or copper.
The waveguide of the input waveguide matching structure is TE10Mode(s).
And only a quasi-TEM mode exists on the microstrip line of the impedance matching section of the T-shaped suspension microstrip circuit.
The microstrip line can be processed by selecting quartz, alumina ceramics, aluminum nitride ceramics and other film substrates, and the thinner the substrate thickness is, the better the substrate thickness is.
The second Schottky diode is bonded on the microstrip line according to the same polarity as the first Schottky diode, and the tube junctions of the two Schottky diodes are in the same direction.
Meanwhile, the two schottky diodes are located near the input waveguide short-circuit plane 1/4 wavelength.
Further, the schottky diode may be implemented using a conventional conductive adhesive bonding process or a soldering process.
The output probe structure adopts an integrated direct current feed port; or, on the premise of ensuring the inhibition of parasitic harmonic waves, the direct current path is realized through the gold wire jumper.
Through the schottky doubling of frequency structure of above-mentioned structural design, its main theory of operation does:
the input electromagnetic wave operates in TE in the waveguide10In the mode, each harmonic wave is excited after passing through the Schottky diode pair, and then the second harmonic wave and the third harmonic wave of the Schottky diode are divided into two paths at the T-shaped junction.
The invention has the following beneficial effects:
the invention utilizes the intrinsic inhibition of the frequency doubling circuit to realize the frequency doubling circuit structure which outputs the second harmonic and the third harmonic simultaneously, and particularly utilizes the harmonic inhibition characteristic of the circuit to omit a complex matched filter circuit at the output end, thereby reducing the power consumed in the matched filter circuit; then, the complexity and cost of the link can be greatly simplified by utilizing the characteristic of the dual-band output of the circuit, and homologous second harmonic and third harmonic are provided for the communication and imaging application fields.
Drawings
Fig. 1 is a schematic diagram of a conventional balanced frequency doubler.
Fig. 2 is a schematic circuit structure of the present invention.
Detailed Description
A multimode schottky frequency doubling structure, as shown in fig. 2, is a multimode schottky frequency doubling structure, which includes an input waveguide matching structure, a T-shaped suspended microstrip circuit, and an output probe structure.
The input waveguide matching structure is used for matching input impedance of a circuit.
The T-shaped suspension microstrip circuit comprises a suspension microstrip T-shaped junction circuit and an impedance matching circuit.
The suspension microstrip T-junction circuit is provided with two opposite Schottky diodes, namely a first diode and a second diode.
One end of the first diode is bonded on the microstrip line, and the other end of the first diode is grounded; one end of the second diode is adhered to the branch of the microstrip line, and the other end is virtually grounded on the microstrip line through the open-circuit branch line.
The suspension microstrip T-shaped junction is used for shunting the second harmonics of the two Schottky diodes along the direction of the impedance matching circuit, shunting the third harmonics of the two Schottky diodes along the open-circuit branch line, and outputting the shunts in two ways.
The waveguide matching structure matches input impedance of the circuit, and the waveguide can be processed by metal such as aluminum, copper and the like.
The two Schottky diodes are positioned at the fork of the T-shaped suspension microstrip circuit and are also positioned near the input waveguide short-circuit surface 1/4 wavelength, and the diode tube junctions face the same direction. Further, the schottky diode may be implemented using a conventional conductive adhesive bonding process or a soldering process.
The output probe structure adopts an integrated direct current feed port, and can realize a direct current path through a gold wire jumper wire on the premise of ensuring the inhibition on parasitic harmonic waves.
The microstrip line can be processed by selecting quartz, alumina ceramics, aluminum nitride ceramics and other film substrates, and the thinner the substrate thickness is, the better the substrate thickness is.
In the above structure, the input electromagnetic wave operates in the waveguide at TE10The mode, after diode pair, excites each harmonic. The field directions of the most dominant second and third harmonics are shown in fig. 2, and the second and third harmonics are split into two paths at the T-junction. Because the suspended microstrip line in region 1 has only a quasi-TEM mode, which coincides with the field mode of the second harmonic and suppresses the third harmonic, the second harmonic will pass the output along the path of region 1. While the third harmonic will pass the output along the path of region 2 (where the second harmonic is intrinsically suppressed). Therefore, the odd-even mode shunt mode of the circuit enables the second harmonic and the third harmonic in the frequency multiplier circuit to be output according to different paths, and the dual-mode frequency multiplier circuit capable of outputting the second harmonic and the third harmonic simultaneously is realized.
According to the above embodiments, it can be seen that, compared with the conventional structure (fig. 2 and fig. 1), the frequency multiplier circuit structure of the present invention:
(1) the balance is different: the conventional balanced frequency multiplier circuit shown in fig. 1 utilizes mode isolation of a waveguide field mode and a suspended microstrip field mode to realize odd harmonic suppression, and is essentially a single-mode balanced structure; the circuit structure of the present invention shown in fig. 2 is a balanced structure of multiple modes, in which odd harmonic suppression of the second harmonic channel is realized by using waveguide mode and microstrip mode isolation, and even harmonic suppression of the third harmonic channel is realized by using a diode pair.
(2) The output modes are different: the circuit in fig. 1 uses a single-mode balanced structure, can only output the working frequency band of the second harmonic, and belongs to a single-mode working state; in the circuit structure of the present invention shown in fig. 2, the same module can generate the second harmonic signal and the third harmonic signal at the same time, and the output signal has two modes, which belong to the upper mode working state.

Claims (9)

1. A multimode Schottky frequency doubling structure is characterized in that: the device comprises an input waveguide matching structure, a T-shaped suspension microstrip circuit and an output probe structure;
the input waveguide matching structure is used for matching input impedance of a circuit;
the T-shaped suspension microstrip circuit comprises a suspension microstrip T-shaped junction circuit and an impedance matching circuit, two opposite Schottky diodes are bonded on a microstrip line at the branch of the suspension microstrip T-shaped junction circuit, and the two Schottky diodes comprise a first diode and a second diode; one end of the first diode is grounded, and one end of the second diode is virtually grounded on the microstrip line through an open-circuit branch line; the suspension microstrip T-shaped junction is used for shunting and outputting the second harmonics of the two Schottky diodes along the direction of the impedance matching circuit and shunting and outputting the third harmonics of the two Schottky diodes along the open-circuit branch line.
2. The multimode schottky doubling structure of claim 1, wherein: the waveguide of the input waveguide matching structure is made of aluminum or copper.
3. The multimode schottky doubling structure of claim 1, wherein: the waveguide of the input waveguide matching structure is TE10Mode(s).
4. The multimode schottky doubling structure of claim 1, wherein: and only a quasi-TEM mode exists on the microstrip line of the impedance matching section of the T-shaped suspension microstrip circuit.
5. The multimode schottky doubling structure of claim 1, wherein: the microstrip line is made of quartz, alumina ceramics or aluminum nitride ceramics.
6. The multimode schottky doubling structure of claim 1, wherein: the second Schottky diode is bonded on the microstrip line according to the same polarity as the first Schottky diode, and the tube junctions of the two Schottky diodes are in the same direction.
7. A multimode Schottky frequency doubling structure as in claim 1 or 6, wherein: the two schottky diodes are located near the input waveguide short-circuit plane 1/4 wavelength.
8. The multimode schottky doubling structure of claim 1, wherein: the output probe structure employs an integrated dc feed port.
9. The multimode schottky doubling structure of claim 1, wherein: the output probe structure realizes a direct current path through a gold wire jumper.
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CN114844468A (en) * 2022-05-12 2022-08-02 中国工程物理研究院电子工程研究所 Novel balanced Schottky quadruple frequency structure and using method thereof
CN114928334A (en) * 2022-05-12 2022-08-19 中国工程物理研究院电子工程研究所 Novel balanced schottky triple frequency structure

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Cited By (3)

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Publication number Priority date Publication date Assignee Title
CN114844468A (en) * 2022-05-12 2022-08-02 中国工程物理研究院电子工程研究所 Novel balanced Schottky quadruple frequency structure and using method thereof
CN114928334A (en) * 2022-05-12 2022-08-19 中国工程物理研究院电子工程研究所 Novel balanced schottky triple frequency structure
CN114928334B (en) * 2022-05-12 2023-05-19 中国工程物理研究院电子工程研究所 Balanced schottky triple frequency structure

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