CN107483018A - Terahertz even balanced type frequency multiplier - Google Patents
Terahertz even balanced type frequency multiplier Download PDFInfo
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- CN107483018A CN107483018A CN201710556859.4A CN201710556859A CN107483018A CN 107483018 A CN107483018 A CN 107483018A CN 201710556859 A CN201710556859 A CN 201710556859A CN 107483018 A CN107483018 A CN 107483018A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/16—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source using uncontrolled rectifying devices, e.g. rectifying diodes or Schottky diodes
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Abstract
The invention provides a kind of Terahertz even balanced type frequency multiplier, including：Input waveguiding structure, output end waveguiding structure and Terahertz even balanced type frequency multiplier circuit；Input waveguiding structure includes first standard waveguide；At least one second standard waveguide and at least one first that output end waveguiding structure includes being sequentially connected subtracts high waveguide；Terahertz even balanced type frequency multiplier circuit includes the Xiao Jite diodes of E faces microstrip probe and setting on the transmission line；The first opening set in the final stage waveguide that E faces microstrip probe passes through input waveguiding structure is extended in input waveguiding structure；The second opening set in the final stage waveguide that Xiao Jite diodes pass through output end waveguiding structure is extended in output end waveguiding structure.The present invention can both reduce the size of Terahertz frequency multiplier input waveguiding structure and Terahertz frequency multiplier circuit, to be advantageous to the miniaturization of Terahertz frequency multiplier structure, while output end waveguiding structure reduces circuit loss using the multistage waveguiding structure interconnected successively.
Description
Technical field
The invention belongs to THz devices technical field, more particularly to a kind of Terahertz even balanced type frequency multiplier.
Background technology
Electromagnetic wave of the frequency in the range of 0.1-10THz is generally defined as THz wave (THz ripples), it is between millimeter wave
Between infrared light, in the transition region from electronics light to photonic propulsion.THz ripples occupy very special position in electromagnetic spectrum
Put, have the characteristics that frequency it is high, with it is wide, security is good, be widely used in safety check, communication, colleague, radar, radio astronomy.
Because the frequent rate of THz wave is higher, in order to obtain reliable and stable signal source, it is often necessary to obtained too using the method for frequency multiplication
Hertz wave, the process are realized typically by frequency multiplier.Wherein frequency multiplier can be divided into balanced type frequency multiplier and unbalanced
Frequency multiplier, balanced type frequency multiplier can be divided into even balanced type frequency multiplier and odd balanced type frequency multiplier again.
Traditional even balanced type frequency multiplier typically uses the square wave of high quality factor (Q values) in input and output end
Impedance matching and filter function that resonator realizes Schottky diode are led, but the structure of this rectangular-wave resonant cavity causes
The cavity volume of frequency multiplier is excessive, is unfavorable for the miniaturization of even balanced type frequency multiplier structure.
The content of the invention
In view of this, the embodiments of the invention provide a kind of Terahertz even balanced type frequency multiplier, to solve prior art
Middle Rectangular Waveguide Structure make it that the cavity volume of frequency multiplier is excessive, and the miniaturization for being unfavorable for even balanced type frequency multiplier structure is asked
Topic.
The first aspect of the embodiment of the present invention provides a kind of Terahertz even balanced type frequency multiplier, including：
Input waveguiding structure, output end waveguiding structure and Terahertz even balanced type frequency multiplier circuit；
The input waveguiding structure includes first standard waveguide, and first standard waveguide is the input ripple
The final stage waveguide of guide structure, the end of the final stage waveguide of the input waveguiding structure is the first short-circuit face；
At least one second standard waveguide and at least one first that the output end waveguiding structure includes being sequentially connected subtracts
High waveguide, one first of described output end waveguiding structure one end subtracts the final stage ripple that high waveguide is the output end waveguiding structure
Lead, the end of the final stage waveguide of the output end waveguiding structure is the second short-circuit face；
The Terahertz even balanced type frequency multiplier circuit includes the E faces microstrip probe and Xiao Jite bis- connected by transmission line
Pole pipe；
The first opening that E faces microstrip probe is set in the final stage waveguide by the input waveguiding structure extends to
In the input waveguiding structure, the local oscillation signal received is coupled to the Xiao Ji out of input waveguiding structure cavity
Special diode, the second opening extension that the Xiao Jite diodes are set in the final stage waveguide by the output end waveguiding structure
In to the output end waveguiding structure, the radiofrequency signal that local oscillation signal is obtained after Xiao Jite diode process of frequency multiplication couples
To the cavity of the output end waveguiding structure.
Further, the input waveguiding structure also subtracts height including one is connected with first standard waveguide second
Waveguide, described second subtracts the final stage waveguide that high waveguide is the input waveguiding structure.
Further, four points of the length of the final stage waveguide of the input waveguiding structure more than local oscillation signal fundamental frequency
One of waveguide wavelength, it is described first opening positioned at the input waveguiding structure final stage waveguide H faces longitudinal axis at and in
The spacing in diameter parallel, first opening and the described first short-circuit face is a quarter waveguide wavelength of signal fundamental frequency；
It is caused humorous after process of frequency multiplication that the length of the final stage waveguide of the output end waveguiding structure is more than local oscillation signal
The a quarter waveguide wavelength of wave frequency rate, second opening are located at the afterbody of the final stage waveguide of the output end waveguiding structure,
And the spacing in the Xiao Jite diodes and the described second short-circuit face is local oscillation signal caused harmonic wave frequency after process of frequency multiplication
The a quarter waveguide wavelength of rate.
Further, the Terahertz even balanced type frequency multiplier circuit also includes：First low pass filter, input matching electricity
Road；
The input of first low pass filter is connected with one end of E faces microstrip probe, first low pass filtered
The output end of ripple device is connected with the input of the input matching circuit；
The output end of the input matching circuit is connected with the Xiao Jite diodes.
Further, the Terahertz even balanced type frequency multiplier also includes biasing circuit, and the biasing circuit includes connecing
Enter biasing circuit band line and the second low pass filter of dc source；
Output end of the biasing circuit with line is connected with the input of second low pass filter, second low pass
The output end of wave filter is connected with the other end of E faces microstrip probe.
Further, the outside of the biasing circuit is provided with biasing circuit cavity.
Further, the Xiao Jite diodes are connected by grounded metal with the output end waveguiding structure.
Further, the input waveguiding structure overlaps with the E faces of the waveguides at different levels of the output end waveguiding structure.
Further, first low pass filter is 5 ranks or 7 rank height impedance micro-strips.
Further, circuit main cavity is set outside the Terahertz even balanced type frequency multiplier circuit.
Existing beneficial effect is the embodiment of the present invention compared with prior art：Terahertz provided in an embodiment of the present invention is even
Secondary balanced type frequency multiplier includes：Input waveguiding structure, output end waveguiding structure and Terahertz even balanced type frequency multiplier circuit；It is defeated
Enter to hold waveguiding structure to include first standard waveguide, the first standard waveguide is the final stage waveguide of input waveguiding structure, is inputted
The end for holding the final stage waveguide of waveguiding structure is the first short-circuit face；Output end waveguiding structure includes at least one the be sequentially connected
Two standard waveguides and at least one first subtract high waveguide, and it is output end that one first of output end waveguiding structure one end, which subtracts high waveguide,
The final stage waveguide of waveguiding structure, the end of the final stage waveguide of output end waveguiding structure is the second short-circuit face；Terahertz even balances
Formula frequency multiplier circuit includes the Xiao Jite diodes of E faces microstrip probe and setting on the transmission line；E faces microstrip probe passes through input
Set in the final stage waveguide of waveguiding structure first opening extend in input waveguiding structure, by the local oscillation signal received from
Terahertz even balanced type frequency multiplier circuit is coupled in the cavity of input waveguiding structure；Xiao Jite diodes pass through output end ripple
The second opening set in the final stage waveguide of guide structure is extended in output end waveguiding structure, and local oscillation signal is passed through into Xiao Jite bis-
The radiofrequency signal obtained after pole pipe process of frequency multiplication is coupled in the cavity of output end waveguiding structure.Due to input waveguiding structure bag
A standard waveguide is included, and Terahertz even balanced type frequency multiplier circuit uses the E faces microstrip probe and Xiao Jite of transmission line connection
The planar transmission cable architecture of diode, output end waveguiding structure subtract high waveguide with first using the second standard waveguide and are mutually connected successively
The multistage waveguiding structure connect, to realize the local oscillation signal filtering of harmonic signal and Schottky diode after frequency multiplier is handled
The matching of output impedance, the size of Terahertz frequency multiplier input waveguiding structure is reduced, be advantageous to Terahertz even balanced type
The miniaturization of frequency multiplier structure, while output end waveguiding structure uses the multistage waveguide junction interconnected successively with high q-factor
Structure, the filtering of the radiofrequency signal of output and the output impedance matching of Xiao Jite diodes are realized together with Xiao Jite diodes, is subtracted
The small size of Terahertz even balanced type frequency multiplier, while reduce the circuit loss of Terahertz even balanced type frequency multiplier.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
In the required accompanying drawing used be briefly described, it should be apparent that, drawings in the following description be only the present invention some
Embodiment, for those of ordinary skill in the art, without having to pay creative labor, can also be according to these
Accompanying drawing obtains other accompanying drawings.
Fig. 1 is the structural representation for the Terahertz even balanced type frequency multiplier that one embodiment of the invention provides；
Fig. 2 is the structural representation for the Terahertz even balanced type frequency multiplier that another embodiment of the present invention provides；
Fig. 3 is Schottky diode structure schematic diagram provided in an embodiment of the present invention.
Embodiment
In describing below, in order to illustrate rather than in order to limit, it is proposed that such as tool of particular system structure, technology etc
Body details, thoroughly to understand the embodiment of the present invention.However, it will be clear to one skilled in the art that there is no these specific
The present invention can also be realized in the other embodiments of details.In other situations, omit to well-known system, device, electricity
Road and the detailed description of method, in case unnecessary details hinders description of the invention.
In order to illustrate technical solutions according to the invention, illustrated below by specific embodiment.
With reference to figure 1, Fig. 1 is the structural representation for the Terahertz even balanced type frequency multiplier that one embodiment of the invention provides
Figure, the Terahertz even balanced type frequency multiplier of the present embodiment include：
Input waveguiding structure 101, output end waveguiding structure 102 and Terahertz even balanced type frequency multiplier circuit 103.
Input waveguiding structure 101 includes first standard waveguide 1011, and the first standard waveguide 1011 is input ripple
The final stage waveguide of guide structure, the end of the final stage waveguide of input waveguiding structure 101 is the first short-circuit face.
Output end waveguiding structure 102 includes at least one second standard waveguide 1021 and at least one first being sequentially connected
Subtract high waveguide 1022, one first of the one end of output end waveguiding structure 102 subtracts high waveguide 1022 as output end waveguiding structure 102
Final stage waveguide, the end of the final stage waveguide of output end waveguiding structure 102 is the second short-circuit face.
Terahertz even balanced type frequency multiplier circuit 103 includes the E faces microstrip probe 1031 and Xiao Ji connected by transmission line
Special diode 1032, wherein Schottky diode can be arsenic potassium Schottky diode.
The first opening 1012 set in the final stage waveguide that E faces microstrip probe 1031 passes through input waveguiding structure 101 is prolonged
Extend in input waveguiding structure 101, the local oscillation signal received is coupled to terahertz out of input waveguiding structure cavity
Hereby even balanced type frequency multiplier circuit；Set in the final stage waveguide that Xiao Jite diodes 1032 pass through output end waveguiding structure 102
Second opening 1023 is extended in output end waveguiding structure 102, by local oscillation signal after Xiao Jite diode process of frequency multiplication
In cavity of the radiofrequency signal arrived from Terahertz even balanced type frequency multiplier circuit coupled to output end waveguiding structure.
It was found from above-described embodiment, Terahertz even balanced type frequency multiplier provided in an embodiment of the present invention, due to input
Waveguiding structure includes a standard waveguide, and Terahertz even balanced type frequency multiplier circuit is visited using the E faces micro-strip of transmission line connection
The planar transmission cable architecture of pin and Xiao Jite diodes, output end waveguiding structure subtract high waveguide using the second standard waveguide and first
The multistage waveguiding structure interconnected successively, to realize the local oscillation signal filtering of harmonic signal and Xiao Te after frequency multiplier is handled
The matching of the output impedance of based diode, the size of Terahertz frequency multiplier input waveguiding structure is reduced, is advantageous to Terahertz
The miniaturization of even balanced type frequency multiplier structure, while output end waveguiding structure uses interconnecting successively with high q-factor
Multistage waveguiding structure, the filtering of the radiofrequency signal of output and the output resistance of Xiao Jite diodes are realized together with Xiao Jite diodes
Anti- matching, reduces the size of Terahertz even balanced type frequency multiplier, while reduces the electricity of Terahertz even balanced type frequency multiplier
Path loss consumes.
With reference to figure 2, Fig. 2 is the structural representation for the Terahertz even balanced type frequency multiplier that another embodiment of the present invention provides
Figure, on the basis of above-described embodiment, the input waveguiding structure 101 also includes one and first standard waveguide 1011
The second of connection subtracts high waveguide 1013, and described second subtracts the final stage waveguide that high waveguide 1013 is the input waveguiding structure 101.
Wherein, the first standard waveguide 1011 can be WR-8 rectangular waveguides, and second subtracts high waveguide 1013 subtracts high waveguide for one-level.Pass through increasing
If one-level subtracts high waveguide to ensure that local oscillation signal enters input waveguiding structure to greatest extent.
Further, it is more than local oscillation signal fundamental wave frequency with reference to figure 2, the length of the final stage waveguide of input waveguiding structure 101
The a quarter waveguide wavelength of rate, H face longitudinal axis of first opening 1012 positioned at the final stage waveguide of input waveguiding structure 101
Place and in diameter parallel, the spacing in the first opening 1012 and the first short-circuit face for signal fundamental frequency quarter-wave guided wave
It is long；The length of the final stage waveguide of output end waveguiding structure 102 is more than local oscillation signal caused harmonic frequency after process of frequency multiplication
A quarter waveguide wavelength, the second opening 1023 is positioned at the afterbody of the final stage waveguides of output end waveguiding structure 102, and Xiao Jite
The spacing in 1032 and second short-circuit face of diode is a quarter of local oscillation signal caused harmonic frequency after process of frequency multiplication
Waveguide wavelength.Wherein, local oscillation signal is the signal that input waveguiding structure receives.Wherein E faces be rectangular waveguide leptoprosopy, generation
Table electric field；H faces are the wide face of rectangular waveguide, represent magnetic field.
It is open because the electric field in waveguiding structure at a quarter waveguide wavelength of distance short circuit face is most strong, therefore by first
1012 and first short-circuit face spacing be signal fundamental frequency a quarter waveguide wavelength, Xiao Jite diodes 1032 and second
The spacing in short-circuit face is a quarter waveguide wavelength of local oscillation signal caused harmonic frequency after process of frequency multiplication, can be ensured
The local oscillation signal received will be coupled to Terahertz even balanced type out of input waveguiding structure cavity to greatest extent
Frequency multiplier circuit and the obtained radiofrequency signal by local oscillation signal after process of frequency multiplication are put down from Terahertz even to greatest extent
Weighing apparatus formula frequency multiplier circuit is coupled in the cavity of output end waveguiding structure.
Further, also include with reference to figure 2, Terahertz even balanced type frequency multiplier circuit 103：First low pass filter
1033rd, input matching circuit 1034；The input of first low pass filter 1033 is connected with one end of E faces microstrip probe 1031,
The output end of first low pass filter 1033 is connected with the input of input matching circuit 1034；Input matching circuit 1034 it is defeated
Go out end to be connected with Xiao Jite diodes 1032 by transmission line.Wherein, first low pass filter is 5 ranks or the high low-resistance of 7 ranks
Anti- microstrip line.Wherein, the effect of the first low pass bandpass filter 1033 is to transmit the local oscillation signal of input to Xiao to greatest extent
Base spy diode 1032；The effect of input matching circuit 1034 is to ensure impedance and the Xiao Jite diodes 1032 of local oscillation signal
Impedance carries out impedance matching so that local oscillation signal feed-in Xiao Jite diodes 1032 to greatest extent.
In addition, by using the first low pass filter 1033, input matching circuit 1034, E faces microstrip probe 1031 and Xiao
The planar transmission cable architectures such as base spy diode 1032, reduce the volume of Terahertz even balanced type frequency multiplier circuit, realize into
The structure of the reduction frequency multiplier of one step.
Further, also include with reference to figure 2, above-mentioned Terahertz even balanced type frequency multiplier：Biasing circuit 104, it is described inclined
Circuits 104 include the biasing circuit band low pass filter 1042 of line 1041 and second of access dc source；
Output end of the biasing circuit with line 1041 is connected with the input of second low pass filter 1042, described
The output end of second low pass filter 1042 is connected with the other end of E faces microstrip probe 1031.
Further, grounded metal 1035 and the output end waveguide are passed through with reference to figure 2, the Xiao Jite diodes 1032
Structure 102 connects.Wherein, the cavity of grounded metal 1035 and output end waveguiding structure 102 passes through conducting resinl (not shown)
Realize connection.Xiao Jite diodes 1032 are arsenic potassium GaAs base frequency doubled diodes, and the GaAs bases frequency doubled diode uses upside-down mounting
Type of Welding.
It should be noted that with reference to figure 3, Fig. 3 is Schottky diode structure schematic diagram provided in an embodiment of the present invention, on
The anode knot 10321 of 4 series connection can be included by stating Schottky diode 1032.The intermediate node of Schottky diode 1032
10322 are connected by the transmission line with the input matching circuit 1034, four anodes of the Schottky diode 1032
Knot is separately positioned on the both sides of intermediate node.From the point of view of the direction of an electric field (as shown in A in Fig. 3) of input, the Schottky two
The anode knot of the both sides of the intermediate node of pole pipe 1032 is equivalent to parallel connection in the same direction；From the direction of an electric field of output end (such as B institutes in Fig. 3
Show) from the point of view of, the anode knot of the both sides of the intermediate node of the Schottky diode 1032 is equivalent to differential concatenation.Above-mentioned Schottky
The anode knot of diode 1032 can also be the Schottky diode of 6 or other even numbers, its connected mode and 4 anode knots
It is similar, repeat no more here.
Further, with reference to figure 2, the ripples at different levels of the input waveguiding structure 101 and the output end waveguiding structure 102
The E faces led overlap.Wherein enter to hold the central axis of waveguiding structure 101 and the waveguides at different levels of the output end waveguiding structure 102 can
Can also be misaligned with coincidence.
Further, circuit main cavity 105 is set with reference to figure 2, the Terahertz even balanced type frequency multiplier circuit outside.
Further, it is provided with biasing circuit cavity 106 with reference to figure 2, the outside of the biasing circuit.
Further, wherein the substrate of Terahertz even balanced type frequency multiplier circuit is Rogers Rogers5880 substrates or stone
English substrate, the thickness of the substrate of Rogers 5880 is 127 millimeters, and the thickness of the quartz base plate is 30 millimeters to 75 millimeters.
It should be noted that the transmission line on the substrate of Terahertz even balanced type frequency multiplier circuit is metallic gold Au structures
Into thickness range is 2 microns to 4 microns.
Embodiment described above is merely illustrative of the technical solution of the present invention, rather than its limitations；Although with reference to foregoing reality
Example is applied the present invention is described in detail, it will be understood by those within the art that：It still can be to foregoing each
Technical scheme described in embodiment is modified, or carries out equivalent substitution to which part technical characteristic；And these are changed
Or replace, the essence of appropriate technical solution is departed from the spirit and scope of various embodiments of the present invention technical scheme, all should
Within protection scope of the present invention.
Claims (10)
- A kind of 1. Terahertz even balanced type frequency multiplier, it is characterised in that including：Input waveguiding structure, output end waveguide junction Structure and Terahertz even balanced type frequency multiplier circuit；The input waveguiding structure includes first standard waveguide, and first standard waveguide is the input waveguide junction The final stage waveguide of structure, the end of the final stage waveguide of the input waveguiding structure is the first short-circuit face；At least one second standard waveguide and at least one first that the output end waveguiding structure includes being sequentially connected subtracts Gao Bo Lead, one first of described output end waveguiding structure one end subtracts the final stage waveguide that high waveguide is the output end waveguiding structure, institute The end for stating the final stage waveguide of output end waveguiding structure is the second short-circuit face；The Terahertz even balanced type frequency multiplier circuit includes E faces microstrip probe and the poles of Xiao Jite bis- connected by transmission line Pipe；The first opening that E faces microstrip probe is set in the final stage waveguide by the input waveguiding structure extends to described In input waveguiding structure, the local oscillation signal received is coupled to the Xiao Jite bis- out of input waveguiding structure cavity Pole pipe, the second opening that the Xiao Jite diodes are set in the final stage waveguide by the output end waveguiding structure extend to institute State in output end waveguiding structure, the radiofrequency signal that local oscillation signal is obtained after Xiao Jite diode process of frequency multiplication is coupled to institute In the cavity for stating output end waveguiding structure.
- 2. Terahertz even balanced type frequency multiplier according to claim 1, it is characterised in that the input waveguiding structure Also include one be connected with first standard waveguide second subtract high waveguide, described second to subtract high waveguide be the input ripple The final stage waveguide of guide structure.
- 3. Terahertz even balanced type frequency multiplier according to claim 1, it is characterised in thatThe length of the final stage waveguide of the input waveguiding structure is more than a quarter waveguide wavelength of local oscillation signal fundamental frequency, First opening is described at the H faces longitudinal axis of the final stage waveguide of the input waveguiding structure and in diameter parallel First opening and a quarter waveguide wavelength that the spacing in the described first short-circuit face is local oscillation signal fundamental frequency；The length of the final stage waveguide of the output end waveguiding structure is more than local oscillation signal caused harmonic wave frequency after process of frequency multiplication The a quarter waveguide wavelength of rate, second opening are located at the afterbody of the final stage waveguide of the output end waveguiding structure, and institute It is local oscillation signal caused harmonic frequency after process of frequency multiplication to state Xiao Jite diodes and the spacing in the described second short-circuit face A quarter waveguide wavelength.
- 4. Terahertz even balanced type frequency multiplier according to claim 1, it is characterised in that the Terahertz even balance Formula frequency multiplier circuit also includes：First low pass filter, input matching circuit；The input of first low pass filter is connected with one end of E faces microstrip probe, first low pass filter Output end be connected with the input of the input matching circuit；The output end of the input matching circuit is connected with the Xiao Jite diodes.
- 5. Terahertz even balanced type frequency multiplier according to claim 1, it is characterised in that also including biasing circuit, institute Stating biasing circuit includes biasing circuit band line and the second low pass filter of access dc source；Output end of the biasing circuit with line is connected with the input of second low pass filter, second LPF The output end of device is connected with the other end of E faces microstrip probe.
- 6. Terahertz even balanced type frequency multiplier according to claim 5, it is characterised in that the outside of the biasing circuit Provided with biasing circuit cavity.
- 7. Terahertz even balanced type frequency multiplier according to claim 1, it is characterised in that the Xiao Jite diodes lead to Grounded metal is crossed to be connected with the output end waveguiding structure.
- 8. Terahertz even balanced type frequency multiplier according to claim 1, it is characterised in that the input waveguiding structure Overlapped with the E faces of the waveguides at different levels of the output end waveguiding structure.
- 9. Terahertz even balanced type frequency multiplier according to claim 4, it is characterised in that first low pass filter For 5 ranks or 7 rank height impedance micro-strips.
- 10. the Terahertz even balanced type frequency multiplier according to any one of claim 1 to 9, it is characterised in that the terahertz Circuit main cavity is hereby set outside even balanced type frequency multiplier circuit.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110932672A (en) * | 2019-11-18 | 2020-03-27 | 东南大学 | Full-band terahertz quadrupler module |
| CN114665823A (en) * | 2022-02-28 | 2022-06-24 | 电子科技大学 | Return-wave terahertz frequency tripling circuit structure |
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| CN204948027U (en) * | 2015-09-13 | 2016-01-06 | 中国电子科技集团公司第十研究所 | Terahertz even solid-state frequency multiplier |
| CN106130486A (en) * | 2016-07-29 | 2016-11-16 | 中国电子科技集团公司第十三研究所 | W-waveband and Terahertz frequency low side doubler |
| CN106549637A (en) * | 2016-10-21 | 2017-03-29 | 北京无线电测量研究所 | A kind of frequency tripler of Terahertz frequency range |
| CN107395124A (en) * | 2017-08-23 | 2017-11-24 | 池州睿成微电子有限公司 | A kind of Terahertz balanced type varactor doubler |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110932672A (en) * | 2019-11-18 | 2020-03-27 | 东南大学 | Full-band terahertz quadrupler module |
| CN114665823A (en) * | 2022-02-28 | 2022-06-24 | 电子科技大学 | Return-wave terahertz frequency tripling circuit structure |
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