CN111366087A - But local measurement's microscopic imaging film thickness measuring device - Google Patents

But local measurement's microscopic imaging film thickness measuring device Download PDF

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Publication number
CN111366087A
CN111366087A CN202010275953.4A CN202010275953A CN111366087A CN 111366087 A CN111366087 A CN 111366087A CN 202010275953 A CN202010275953 A CN 202010275953A CN 111366087 A CN111366087 A CN 111366087A
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lens
film thickness
mirror
adjusting mechanism
light
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CN111366087B (en
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张传维
王鑫辉
李伟奇
郭春付
杨康
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Wuhan Eoptics Technology Co ltd
Huazhong University of Science and Technology
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Wuhan Eoptics Technology Co ltd
Huazhong University of Science and Technology
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection

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  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

The invention relates to the technical field of optical thin film measurement, in particular to a microscopic imaging film thickness measuring device capable of locally measuring, which comprises: the device comprises a light path component, a carrying component and a rack component, wherein the carrying component is arranged on the rack component; the light path component is connected to the rack component; the light path component is used for carrying out optical measurement on the film on the carrying component. According to the microscopic imaging film thickness measuring device capable of locally measuring, provided by the invention, the light source can be used as a measuring light source and an illumination light source at the same time, so that not only can a measuring light beam be emitted, but also a light beam for marking a measuring area can be provided, an additional illumination light source is not required, stray light brought to the measuring light source can be avoided, and the accuracy of a measuring result is improved.

Description

But local measurement's microscopic imaging film thickness measuring device
Technical Field
The invention relates to the technical field of optical thin film measurement, in particular to a microscopic imaging film thickness measuring device capable of locally measuring.
Background
With the recent penetration of optical films in the fields of space remote sensing, precision optics and the like, and the characteristics of low cost, light weight and stable optical properties of the optical films, the ability to design and mass-produce high-precision and high-performance optical films has become a common pursuit of many research institutions and optical enterprises. For the optical film in the working waveband, the thickness of the optical film is an important factor for restricting the optical performance of the film, so how to quickly and accurately measure the thickness of each actual film layer in the development process of the optical film plays an important role in favoring the structure of a film system and improving the preparation process.
In addition, with the development of scientific technology in recent years, various special applications also put forth various requirements on optical thin films, from nano-scale to micro-scale in size. Because the thickness of an optical film controls its own optical, mechanical and electromagnetic properties, many fields and applications now require strict control of material thickness. In the semiconductor industry today, most semiconductor devices and integrated circuit structures are formed from various thin film layers, so that it is a strategic key technology in any country to accurately control the thickness of optical films.
At present, the conventional film thickness detection is roughly divided into two types, namely a non-optical measurement method and an optical measurement method, wherein the non-optical measurement method comprises a quartz crystal method, a microbalance method, a resistance method, a capacitance method, an eddy current method, an ultrasonic method, a probe measurement method and the like, and details are not repeated in the invention. The method has the advantages of mature principle, simple hardware realization, easy integration and wide use environment, and most of film thickness measurement adopts the method. The current common spectral reflection type film thickness meter utilizes the interference principle of light, and particularly, when the film thickness meter transmits measuring light in a known spectral range to a film to be measured, reflected light of an interface between the film and air and reflected light of an interface between the film and a substrate are interfered, the interference is related to the thickness of the film, and the thickness of the film of a sample to be measured can be obtained through a series of calculations.
The size of a detection light spot of the existing spectrum reflection type film thickness instrument is generally 0.5-3 mm, the thickness measurement range of the existing spectrum reflection type film thickness instrument is 50 nm-20 um, and the absolute accuracy and the measurement accuracy of the instrument are generally 0.1 nm. Therefore, in the spectral reflection type film thickness meter, the size of the detection light spot is millimeter magnitude, but the measurement requirement of micron is already met in the measurement requirement of a micro area, so the common spectral reflection type film thickness meter cannot meet the measurement requirement of the micro area.
In addition, most of instruments for measuring the thickness of the thin film on the market perform a five-point measurement method on the thin film, and then obtain an average value of the five-point film thickness to approximate the real thickness of the thin film, and when the thin film is measured, we only ensure that a measured object is the thin film, but when a certain specific point of the measured object is measured, many instruments cannot achieve the task at present.
During measurement, the focal length of a plurality of film thickness measuring devices is changed by adjusting the sample stage, so that the maximum light intensity point is found, but in fact, in the process of finding the maximum light intensity by adjusting the sample stage, the precision can only reach millimeter magnitude, but in the whole measuring process, the precision is actually required to reach micrometer magnitude, so that the maximum light intensity point found by the sample stage is feasible to a certain extent, but the method has the principle defect, and is greatly influenced by manual operation errors, so that the measuring precision cannot be further improved.
When local measurement is carried out, if an illumination light source is introduced to mark a measurement region, although the method can help people to directly find the measurement region, the marking light source brings some stray light to an actual measurement light source, so that the measurement result is not accurate enough, and the accuracy of the measurement result is reduced.
Disclosure of Invention
The invention provides a microscopic imaging film thickness measuring device capable of locally measuring, aiming at the technical problem that the thickness of an optical film is difficult to accurately measure in the prior art.
The technical scheme for solving the technical problems is as follows:
a locally measurable microimaging film thickness measurement apparatus, comprising: the device comprises a light path component, a carrying component and a rack component;
the carrying assembly is arranged on the rack assembly; the light path component is connected to the rack component; the light path component is used for optically measuring the thickness of the sample to be measured on the carrying component.
Further, the optical path component includes: the device comprises a light source, a coaxial illuminator, a first tube mirror, a spectroscope, an objective converter, an objective, a second tube mirror, a perforated reflector, a first lens, an optical fiber, a spectrometer, a second lens and image acquisition equipment;
the light source is connected with the coaxial illuminator; the first tube lens and the spectroscope are arranged in the coaxial illuminator, the coaxial illuminator is connected with the objective lens converter, and the objective lens is connected with the objective lens converter; the light emitted by the light source enters the coaxial illuminator, is incident to the spectroscope through the first tube lens, reflects the light beam to the objective lens through the spectroscope, and is irradiated on a sample to be measured of the object carrying assembly through the objective lens;
one end of the second tube mirror is connected with the coaxial illuminator, and the other end of the second tube mirror is connected with the reflector with the hole; one end of the first lens is connected with one end of the reflector with the hole, and the other end of the first lens is connected with the spectrometer through the optical fiber; one end of the second lens is connected with the perforated reflector, and the other end of the second lens is connected with the image acquisition equipment; the light beam reflected from the sample to be measured enters the coaxial illuminator, is transmitted to the second tube mirror through the spectroscope, is incident to the perforated reflector through the second tube mirror, is reflected to the second lens through the perforated reflector, and is transmitted to the image acquisition equipment through the second lens; a part of light incident on the perforated mirror passes through the light hole, is incident on the first lens, is transmitted to the optical fiber through the first lens, and is transmitted to the spectrometer through the optical fiber.
Further, the method also comprises the following steps: a mirror X/Y adjustment mechanism;
the second tube mirror is connected with the perforated mirror through the mirror X/Y adjusting mechanism; the reflector X/Y adjusting mechanism is used for adjusting the position of the perforated reflector in the X-axis direction and the Y-axis direction.
Further, the method also comprises the following steps: a first lens adjustment mechanism;
the first lens adjusting mechanism is connected with the reflector with the hole, and the first lens is connected to the inner side of the first lens adjusting mechanism; the first lens adjusting mechanism is used for adjusting the focal position of the first lens.
Further, the rack assembly includes: a base, a vertical plate and a transverse plate;
the lower end of the vertical plate is fixedly connected with the base; one end of the transverse plate is fixedly connected with the vertical plate, and the transverse plate and the base are horizontally arranged; the objective lens converter penetrates through the transverse plate and is fixedly connected with the transverse plate.
Further, the rack assembly further includes: reinforcing ribs; the reinforcing ribs are fixedly connected with the base and the vertical plate.
Further, the carrier assembly comprises: the device comprises a three-axis adjusting mechanism, a sample table and an air pump;
the three-axis adjusting mechanism is fixed on the base, the sample table is fixed on the three-axis adjusting mechanism, and the three-axis adjusting mechanism adjusts the sample table in the X-axis direction, the Y-axis direction and the Z-axis direction;
the sample table is provided with at least one adsorption cavity for fixing a sample to be detected, and the adsorption cavity is connected with the air pump through an air pipe.
Further, the objective lens comprises a 5-time objective lens and a 50-time objective lens.
Furthermore, the aperture of the unthreaded hole formed in the reflector with the hole is 100 microns or 200 microns.
Further, the image acquisition device is a CCD image sensor.
The microscopic imaging film thickness measuring device capable of locally measuring provided by the invention at least has the following beneficial effects or advantages:
the microscopic imaging film thickness measuring device capable of locally measuring provided by the invention can enable a beam of measuring light emitted by a light source to pass through the coaxial illuminator, the first tube mirror, the spectroscope and the objective lens to be projected on a sample to be measured of the object carrying assembly, at the moment, the beam of light can be reflected on the upper surface and the bottom surface of the sample to be measured, and the two reflected lights are interfered. The light beam reflected from the sample to be measured enters the image acquisition equipment through the coaxial illuminator, the spectroscope, the second tube mirror, the reflector with the hole and the second lens, and the second lens enters the image acquisition equipment to realize real-time imaging of a measurement area; a portion of the light incident on the apertured mirror passes through the light aperture and is transmitted through the first lens to the optical fiber, through the optical fiber to the spectrometer. The reflectivity is obtained through the light intensity measured by the spectrometer, the theoretical spectrum with the minimum fitting error with the measured spectrum is obtained through a nonlinear method, and the film thickness value corresponding to the theoretical spectrum is the actual film thickness value of the sample to be measured, so that the accurate measurement of the thickness of the optical film is realized. According to the microscopic imaging film thickness measuring device capable of locally measuring, provided by the invention, the light source can be used as a measuring light source and an illumination light source at the same time, so that not only can a measuring light beam be emitted, but also a light beam for marking a measuring area can be provided, an additional illumination light source is not required, stray light brought to the measuring light source can be avoided, and the accuracy of a measuring result is improved.
Drawings
FIG. 1 is an optical path diagram of a microscopic imaging film thickness measuring apparatus capable of local measurement according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a microscopic imaging film thickness measuring apparatus capable of local measurement according to an embodiment of the present invention;
FIG. 3 is a schematic view of a first partial structure of a microscopic imaging film thickness measuring apparatus capable of local measurement according to an embodiment of the present invention;
FIG. 4 is a schematic view of a first partial structure of a microscopic imaging film thickness measuring apparatus capable of local measurement according to an embodiment of the present invention;
FIG. 5 is a schematic view of a first partial structure of a device for measuring a film thickness of a microscopic imaging film capable of local measurement according to an embodiment of the present invention;
FIG. 6 is a schematic view of a first partial structure of a microscopic imaging film thickness measuring apparatus capable of local measurement according to an embodiment of the present invention.
In the drawings, the components represented by the respective reference numerals are listed below:
1-optical fiber, 2-first lens adjusting mechanism, 3-perforated reflector, 4-reflector X/Y adjusting mechanism, 5-light source, 6-coaxial illuminator, 7-objective converter, 8-objective, 9-second tube lens, 10-image acquisition equipment, 11-switching structure, 12-second lens adjusting mechanism, 13-optical fiber adjusting mechanism, 14-transverse plate, 15-triangular plate supporting structure, 16-vertical plate supporting plate, 17-sample stage, 18-X axis displacement adjusting mechanism, 19-Y axis displacement adjusting mechanism, 20-base, 21-adsorption cavity vacuum pump switch, 22-Z axis displacement adjusting mechanism, 23-through hole, 24-adsorption cavity structure, 25-vertical plate and 26-reinforcing rib, 27-first tube lens, 28-beam splitter, 29-first lens, 30-second lens, 200-three-axis adjusting mechanism.
Detailed Description
The embodiment of the invention provides a microscopic imaging film thickness measuring device capable of locally measuring, aiming at the technical problem that the thickness of an optical film is difficult to accurately measure in the prior art.
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
Example one
Referring to fig. 1 and 2, an embodiment of the present invention provides a microscopic imaging film thickness measuring apparatus capable of local measurement, including: light path subassembly, year thing subassembly and frame subassembly. The carrying assembly is arranged on the rack assembly; the light path component is connected to the rack component; the light path component is used for carrying out optical measurement on the film on the carrying component.
Specifically, referring to fig. 1 to 6, the optical path assembly includes: the device comprises a light source 5, a coaxial illuminator 6, a first tube mirror 27, a spectroscope 28, an objective lens converter 7, an objective lens 8, a second tube mirror 9, a reflector 3 with a hole, a first lens 29, an optical fiber 1, a spectrometer, a second lens 30 and an image acquisition device 10. Wherein the light source 5 is connected with the coaxial illuminator 6; the first tube lens 27 and the beam splitter 28 are disposed inside the coaxial illuminator 6, the coaxial illuminator 6 is connected to the objective lens changer 7, and the objective lens 8 is connected to the objective lens changer 7. The light beam emitted by the light source 5 enters the coaxial illuminator 6, and enters the spectroscope 28 through the first tube mirror 27, and the spectroscope 28 reflects the light beam to the objective lens 8, and the light beam is hit on the sample to be measured of the object carrying assembly through the objective lens 8. Wherein, the objective lens 8 comprises a 5-time objective lens and a 50-time objective lens; the image capturing device 10 is a CCD image sensor.
One end of the second tube mirror 9 is connected with the coaxial illuminator 6, and the other end of the second tube mirror 9 is connected with the perforated reflector 3; one end of the first lens 29 is connected with one end of the holey mirror 3, and the other end is connected with the spectrometer through the optical fiber 1. The optical fiber 1 may further be provided with an optical fiber adjusting mechanism 13 for adjusting the pitch angle of the optical fiber 1. One end of the second lens 30 is connected with the perforated reflector 3, and the other end of the second lens 30 is connected with the CCD image sensor through the switching structure 11; the aperture of the unthreaded hole formed in the reflector 3 with the hole is 100 μm or 200 μm. The light beam reflected from the sample to be measured enters the coaxial illuminator 6, is transmitted to the second tube mirror 9 through the spectroscope 28, is incident to the perforated reflector 3 through the second tube mirror 9, is reflected to the second lens 30 through the perforated reflector 3, and is transmitted to the CCD image sensor through the second lens 30. A portion of the light incident on the apertured mirror 3 passes through the light aperture and enters the first lens 29, is transmitted through the first lens 29 to the optical fibre 1 and passes through the optical fibre 1 to the spectrometer.
In the embodiment of the invention, in order to realize the adjustment of the perforated reflector 3, the optical path component is also provided with a reflector X/Y adjusting mechanism 4. The reflector X/Y adjusting mechanism 4 is a two-axis adjusting mechanism that can move in two perpendicular directions, which is commonly used in the mechanical field, and the structure of the two-axis adjusting mechanism is not described in this embodiment, and the reflector 3 with holes can be adjusted in two directions, i.e., the X axis and the Y axis. The second tube mirror 9 is connected with the perforated mirror 3 through the mirror X/Y adjusting mechanism 4; the mirror X/Y adjusting mechanism 4 is used to adjust the position of the holed mirror 3 in the X-axis and Y-axis directions. The surface of the reflector 3 with the hole is plated with a layer of reflecting film, and the center of the reflector is provided with a light hole, so that the reflector 3 with the hole reflects light from a sample to be detected to the CCD image sensor on one hand; on the other hand, the light intensity of the surface of the sample to be measured is projected into the optical fiber 1 through the light hole of the reflector and captured by the spectrometer. For example, the reflector X/Y adjusting mechanism 4 realizes displacement adjustment in the X-axis and Y-axis directions through an adjusting screw and a U-shaped groove, and the coaxial arrangement of the perforated reflector 3 and the optical axis is required to be ensured in the measuring process, so that not only can a CCD image sensor be ensured to obtain a complete image of the surface of a sample to be measured, but also the light intensity of the surface of the sample to be measured can be ensured to be completely captured by a spectrometer through the central light of the reflector as far as possible. Adjusting the X/Y adjusting mechanism can ensure clear imaging in the CCD image sensor on the one hand, and can ensure that the spectrometer captures enough light intensity as far as possible on the other hand, thereby improving the measurement stability and accuracy.
To achieve adjustment of the first lens 29, the optical path assembly is further provided with a first lens adjustment mechanism 2. The first lens adjusting mechanism 2 is a conventional mechanism, such as a lead screw transmission mechanism commonly used in the mechanical field and capable of driving the first lens 29 to move linearly, or a movable device is matched with a jack screw to change the position of the lens, and the like. The first lens adjusting mechanism 2 is connected with the perforated reflector 3, and the first lens 29 is connected with the inner side of the first lens adjusting mechanism 2; the lens adjustment mechanism is used to adjust the focal position of the first lens 29. Because the spectrometer captures the light intensity through the optical fiber 1, and the optical fiber 1 has the core diameter of the optical fiber 1, this means that the light intensity passing through the central hole of the reflector needs to be converged into the core diameter of the optical fiber 1 through the first lens 29, but the focusing effect of the first lens 29 needs to be changed through the lens adjusting mechanism, so that the light passing through the central hole of the reflector from the surface of the sample piece can be converged into the core diameter of the optical fiber 1 to the maximum extent by moving the lens adjusting mechanism, thereby capturing the maximum light intensity to the maximum extent and improving the measurement accuracy.
In addition, the optical path component is further provided with a second lens adjusting mechanism 12, the second lens adjusting mechanism 12 is used for ensuring that the light passing through the second lens 30 and the surface light of the sample piece to be measured reflected from the perforated reflector 3 are coaxial, the main purpose is to change the size of the imaging display area, and the size of the imaging area of the CCD image sensor is changed by adjusting the second lens adjusting mechanism 12. The second lens adjusting mechanism 12 comprises a sliding rail parallel to the optical axis, an adjusting handle is fixedly connected with the second lens 30, the second lens 30 is arranged on the sliding rail, the position of the second lens 30 on the sliding rail is adjusted through the adjusting handle, so that the effective focal length of the second lens 30 is changed, the clearest image formed by the CCD image sensor is found, and the measuring precision and the accuracy are improved. Obviously, in the embodiment of the present invention, the same or similar mechanical mechanisms may be used for the mirror X/Y adjustment mechanism 4, the first lens adjustment mechanism 2, and the second lens adjustment mechanism 12.
The frame subassembly includes: base 20, riser 25, horizontal board 14 and strengthening rib 26. The lower end of the vertical plate 25 is fixedly connected with the base 20; one end of the transverse plate 14 is fixedly connected with a vertical plate 25 through a vertical plate supporting plate 16, and a triangular plate supporting structure 15 with a reinforcing effect is fixed between the transverse plate 14 and the vertical plate supporting plate 16; the transverse plate 14 and the base 20 are horizontally arranged; the objective lens changer 7 passes through the transverse plate 14 and is fixedly connected with the transverse plate 14. The reinforcing ribs 26 are fixedly connected to the base 20 and the vertical plate 25.
The carrier assembly comprises: three-axis adjusting mechanism 200, sample platform 17 and air pump. The three-axis adjusting mechanism 200 is fixed on the base 20, the sample table is fixed on the three-axis adjusting mechanism 200, the three-axis adjusting mechanism 200 comprises an X-axis displacement adjusting mechanism 18, a Y-axis displacement adjusting mechanism 19 and a Z-axis displacement adjusting mechanism 22, the three-axis adjusting mechanism 200 is used for adjusting the sample table in the X-axis direction, the Y-axis direction and the Z-axis direction, and the stroke of the X, Y two-axis displacement table is 100 mm. The sample table 17 is provided with at least one adsorption cavity structure 24 for fixing a sample to be detected, and the adsorption cavity structure 24 is connected with an air pump through an air pipe. In the invention, the measurement samples are nano and micron-sized, the surfaces of the measurement samples are smooth, and in order to ensure that the sample to be measured is fixed on the sample table 17 without slipping and ensure the stability when the measurement is repeated at a single point, an adsorption cavity structure 24 is designed on the sample table 17, the adsorption cavity structure 24 is connected with an air pump through an air pipe, and an adsorption cavity vacuum pump switch 21 is arranged on the air pipe. And the upper surface of the adsorption cavity structure 24 is contacted with the sample table, and five through holes 23 are designed, when the sample piece is measured, the air pump is opened to pump air, so that the sample can be ensured to be fixed on the sample table 17. The three-axis adjusting mechanism 200 is a conventional technique, and the structure thereof is not described in this embodiment.
Example two
Referring to fig. 1-6, the embodiment of the present invention utilizes an optical measurement method to measure the film thickness of a sample, and the principle is as follows: a beam of measuring light vertically strikes a sample to be measured after passing through a series of optical components such as a tube mirror, an objective lens 8 and the like, and then the beam is reflected on the upper surface of the sample, refracted, reflected by the upper surface and the bottom surface, and then interferes with the reflected light through the upper surface of the sample. The light intensity acted on the surface of the sample is captured and collected by a spectrometer along a series of optical elements such as an objective lens 8 tube lens and a lens. Then, the reflectivity is obtained through the light intensity, the theoretical spectrum with the minimum fitting error with the measured spectrum is obtained through a nonlinear method, and at the moment, the film thickness value corresponding to the theoretical spectrum is the actual film thickness value of the sample to be measured by default.
Specifically, the method for measuring the thickness of the thin film provided by the embodiment of the invention comprises the following steps:
step S10, measuring the reflection intensity spectrum of the black sample with the reflectivity spectrum of 0 and marking as Ib(λ)。
Step S20, measuring the reflection spectrum as Rr(λ) and is labeled as Ir(λ)。
Step S30, measuring the reflection light intensity spectrum of the sample piece to be measured with unknown reflectivity spectrum, and marking as Is(λ)。
Step S40, after obtaining the above parameters, according to
Figure BDA0002444787850000111
Can be obtainedThe actual measured reflectance spectrum of the sample piece.
In order to obtain a theoretical reflectivity spectrum closest to an actually measured reflectivity spectrum, the embodiment of the invention needs to establish a functional relationship between light intensity and wavelength, regard film thickness as a parameter of the functional relationship, and assume that d ═ d at this time to represent the functional relationship1,d2,d3...dn]And calculating to obtain a corresponding reflectivity spectrum sequence for the film thickness sequence.
Embodiments of the present invention express the degree of fit by the MSE (mean square error) of the actually measured reflectivity spectrum of the theoretical reflectivity spectrum, where
Figure BDA0002444787850000112
Wherein: n is the number of wavelength points, RcaleAnd RmeasTo calculate the reflectivity spectrum and to measure the reflectivity spectrum. The minimum value obtained by MSE can be used to judge whether the optimal R is obtainedcaleAnd RmeasAt this time RcaleThe corresponding thickness d is the thickness of the film to be measured.
The microscopic imaging film thickness measuring device capable of locally measuring provided by the invention at least has the following beneficial effects or advantages:
the microscopic imaging film thickness measuring device capable of locally measuring provided by the invention can enable a beam of measuring light emitted by a light source to pass through the coaxial illuminator, the first tube mirror, the spectroscope and the objective lens to be projected on a sample to be measured of the object carrying assembly, at the moment, the beam of light can be reflected on the upper surface and the bottom surface of the sample to be measured, and the two reflected lights are interfered. The light beam reflected from the sample to be measured enters the image acquisition equipment through the coaxial illuminator, the spectroscope, the second tube mirror, the reflector with the hole and the second lens to realize real-time imaging of the measurement area; a portion of the light incident on the apertured mirror passes through the light aperture and is transmitted through the first lens to the optical fiber, through the optical fiber to the spectrometer. The reflectivity is obtained through the light intensity measured by the spectrometer, the theoretical spectrum with the minimum fitting error with the measured spectrum is obtained through a nonlinear method, and the film thickness value corresponding to the theoretical spectrum is the actual film thickness value of the sample to be measured, so that the accurate measurement of the thickness of the optical film is realized. According to the microscopic imaging film thickness measuring device capable of locally measuring, provided by the invention, a light source can be used as a measuring light source and an illuminating light source at the same time, because the reflector is provided with the central small hole of 200um or 100um, light of a sample piece to be measured is reflected to the second lens through the reflector and is incident to the image acquisition equipment, but the light of the sample piece to be measured can pass through the central small hole until the light is finally received by the spectrometer through the optical fiber; because the light beam of the area passes through the central small hole, the area is a dark area in the image acquisition equipment, and the dark area is a measurement area; thus, the marking of the measuring area is realized through the illuminating light beam, the reflector and the image acquisition equipment; therefore, the measuring light beam can be emitted, the light beam for marking the measuring area can be provided, an additional illuminating light source is not needed, stray light brought to the measuring light source can be avoided, and the accuracy of the measuring result is improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.

Claims (10)

1. A microscopic imaging film thickness measuring apparatus capable of local measurement, characterized by comprising: the device comprises a light path component, a carrying component and a rack component;
the carrying assembly is arranged on the rack assembly; the light path component is connected to the rack component; the light path component is used for optically measuring the thickness of the sample to be measured on the carrying component.
2. The locally measurable microimaging film thickness measurement apparatus according to claim 1, wherein said optical path assembly comprises: the device comprises a light source (5), a coaxial illuminator (6), a first tube mirror (27), a spectroscope (28), an objective converter (7), an objective (8), a second tube mirror (9), a perforated reflector (3), a first lens (29), an optical fiber (1), a second lens (30) and an image acquisition device (10);
the light source (5) is connected with the coaxial illuminator (6); the first tube lens (27) and the spectroscope (28) are arranged inside the coaxial illuminator (6), the coaxial illuminator (6) is connected with the objective lens converter (7), and the objective lens (8) is connected with the objective lens converter (7); the light emitted by the light source (5) enters the coaxial illuminator (6), is incident to the spectroscope (28) through the first tube lens (27), and the spectroscope (28) reflects the light beam to the objective lens (8) and strikes a sample to be measured of the object carrying assembly through the objective lens (8);
one end of the second tube mirror (9) is connected with the coaxial illuminator (6), and the other end of the second tube mirror (9) is connected with the perforated reflector (3); one end of the first lens (29) is connected with one end of the reflector (3) with the hole, and the other end of the first lens is connected with the spectrometer through the optical fiber (1); one end of the second lens (30) is connected with the perforated reflector (3), and the other end of the second lens is connected with the image acquisition equipment (10); the light beam reflected from the sample to be measured enters the coaxial illuminator (6), is transmitted to the second tube mirror (9) through the spectroscope (28), is incident to the perforated mirror (3) through the second tube mirror (9), is reflected to the second lens (30) through the perforated mirror (3), and is transmitted to the image acquisition device (10) through the second lens (30); a portion of the light incident on the holey mirror (3) passes through the light hole and is incident on the first lens (29), transmitted through the first lens (29) to the optical fibre (1), and transmitted through the optical fibre (1) to the spectrometer.
3. The locally measurable microimaging film thickness measurement apparatus according to claim 2, further comprising: a mirror X/Y adjusting mechanism (4);
the second tube mirror (9) is connected with the perforated mirror (3) through the mirror X/Y adjusting mechanism (4); the reflector X/Y adjusting mechanism (4) is used for adjusting the position of the perforated reflector (3) in the X-axis direction and the Y-axis direction.
4. The locally measurable microimaging film thickness measurement apparatus according to claim 2, further comprising: a first lens adjustment mechanism (2);
the first lens adjusting mechanism (2) is connected with the perforated reflector (3), and the first lens (29) is connected to the inner side of the first lens adjusting mechanism (2); the first lens adjusting mechanism (2) is used for adjusting the focal position of the first lens (29).
5. The locally measurable microimaging film thickness measurement apparatus of claim 2, wherein the gantry assembly comprises: a base (20), a vertical plate (25) and a transverse plate (14);
the lower end of the vertical plate (25) is fixedly connected with the base (20); one end of the transverse plate (14) is fixedly connected with the vertical plate (25), and the transverse plate (14) and the base (20) are horizontally arranged; the objective lens converter (7) penetrates through the transverse plate (14) and is fixedly connected with the transverse plate (14).
6. The locally measurable microimaging film thickness measurement apparatus of claim 5, wherein the gantry assembly further comprises: a reinforcing rib (26); the reinforcing ribs (26) are fixedly connected with the base (20) and the vertical plate (25).
7. The locally measurable microimaging film thickness measurement device of claim 5, wherein the carrier assembly comprises: a three-axis adjusting mechanism (200), a sample table (17) and an air pump;
the three-axis adjusting mechanism (200) is fixed on the base (20), the sample table (17) is fixed on the three-axis adjusting mechanism (200), and the three-axis adjusting mechanism (200) is used for adjusting the sample table (17) in the X-axis direction, the Y-axis direction and the Z-axis direction;
the sample table (17) is provided with at least one adsorption cavity structure (24) for fixing a sample to be detected, and the adsorption cavity structure (24) is connected with the air pump through an air pipe.
8. Locally measurable microscopic imaging film thickness measuring device according to any of claims 2-7, wherein the objective lens (8) comprises a 5-fold objective lens and a 50-fold objective lens.
9. A locally measurable microimaging film thickness measuring device according to any of claims 2-7, wherein the aperture of the aperture opening of the aperture mirror (3) is 100 μm or 200 μm.
10. Locally measurable microscopic imaging film thickness measuring apparatus according to any of claims 2-7, characterized in that the image capturing device (10) is a CCD image sensor.
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