CN114184583B - Optical measurement and evaluation method for depth consistency of high aspect ratio microstructure - Google Patents
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Abstract
The invention discloses an optical measurement and evaluation method for depth consistency of a microstructure with high aspect ratio, which comprises the following steps: processing a silicon-based high-aspect ratio monomer microstructure standard sample, and determining morphological parameters and refractive indexes of the standard sample; correcting dark field noise and light transmittance coefficient of the measuring instrument; establishing a geometric model and an optical model of the multi-depth high-aspect-ratio microstructure; and obtaining a reflectivity spectrum and a fast Fourier transform curve of the sample to be detected, and calculating the half-width of the maximum peak value of the curve, wherein the half-width is defined as a microstructure depth consistency evaluation parameter, and the smaller the value of the evaluation parameter is, the better the depth consistency is. Measuring the relative depth value from the upper surface of the silicon wafer to the bottom of the microstructure by adopting visible light wavelength; the signal-to-noise ratio is relatively high, and the measurement sensitivity of depth consistency is improved; the optical signal measuring flow and the optical structure are simple, and the optical signal measuring flow and the optical structure are easy to integrate into the silicon wafer etching equipment to realize the on-line measurement of the microstructure depth and the consistency thereof.
Description
Technical Field
The invention relates to the technical field of nondestructive testing of microelectronic device manufacturing processes, in particular to an optical measurement and evaluation method for depth consistency of a microstructure with high aspect ratio.
Background
The high aspect ratio microstructure has wide application in the fields of comb-tooth-shaped microelectrode arrays, super capacitors, acceleration sensors, gyroscopes, gratings, micro-nano resonators and the like. The depth uniformity of the microstructure array affects the mechanical resonance frequency, mechanical strength, capacitance characteristics, optical diffraction characteristics and the like of the device, and is an important index for evaluating the manufacturing process level and the quality of the device.
The infrared-based micro-interferometry and confocal scanning methods utilize the characteristic that infrared wavelength light can penetrate through a silicon wafer to measure the depth of a high aspect ratio microstructure from the back of a sample to be measured. The method firstly measures the relative depth between the bottom of the microstructure and the back of the wafer, and then calculates the depth value from the bottom of the microstructure to the surface of the wafer by using the thickness value of the wafer, so that measurement errors caused by the roughness of the back of the wafer and the accuracy of the thickness of the wafer are easy to generate. Meanwhile, the infrared microscopic interferometry is limited by the signal-to-noise ratio of the infrared optical signal, has low measurement sensitivity, is usually in the micron order, and is suitable for the situation of large depth difference of microstructures. In addition, the infrared light-based micro-interferometry and confocal scanning method are complex in instrument and equipment, high in cost and difficult to integrate into silicon wafer etching equipment to realize on-line measurement of microstructure depth.
Disclosure of Invention
In view of the above-mentioned prior art, the present invention provides an optical measurement and evaluation method for depth uniformity of a high aspect ratio microstructure, so as to solve at least one of the above-mentioned technical problems.
In order to solve the technical problems, the invention provides an optical measurement and evaluation method for depth consistency of a microstructure with high aspect ratio, which comprises the following steps:
1) Processing a standard sample, determining the depth value and the refractive index of the standard sample, correcting the dark field noise and the light transmittance spectrum of the measuring instrument, and obtaining the corrected dark field noise and light transmittance spectrum of the measuring instrument:
2) Establishing a geometric model and an optical model of a multi-depth high-aspect-ratio microstructure aiming at a sample to be detected, and obtaining a reflectivity spectrum of the sample to be detected;
3) And (3) obtaining the microstructure depth consistency evaluation parameter of the sample to be tested according to the reflectivity spectrum of the sample to be tested obtained in the step (2).
Further, the optical measurement and evaluation method for depth consistency of the high aspect ratio microstructure comprises the following steps:
the specific content of the step 1) is as follows:
1-1) processing a standard sample: processing a silicon-based high aspect ratio monomer microstructure standard sample, and verifying the surface roughness value of a silicon wafer;
1-2) determining the depth value and refractive index of the standard sample: defining the standard sample as an upper surface-microstructure lower surface structure, measuring the depth value of the single microstructure of the standard sample by using an optical profiler, using a standard dispersion model as a physical optical model of a silicon wafer, and fitting and calculating the refractive index of the standard sample according to ellipsometric parameters measured by an ellipsometer;
1-3) obtaining corrected dark field noise and light transmittance spectra of the measuring instrument: mounting the standard sample to a sample stage of a measuring instrument; closing or shielding a light source, measuring a dark field reflection spectrum of the upper surface of the standard sample, and correcting dark field noise of a measuring instrument; turning on a light source and measuring a bright field reflection spectrum of the upper surface of a standard sample, calculating an optical reflectivity spectrum by using the refractive index of the standard sample obtained in the step 1-2), and correcting a light transmittance spectrum of a measuring instrument by using a light source luminescence spectrum and a spectrometer light quantum efficiency spectrum to obtain a corrected light transmittance spectrum of the measuring instrument; the measuring instrument includes: the device comprises a light source, a beam splitter, a lens, a sample table and a spectrometer, wherein light beams emitted by the light source are converged to a standard sample through the beam splitter by the lens, reflected light beams of the standard sample are reflected by the beam splitter, and reflected spectrum data acquisition is carried out by the spectrometer.
The optical profiler described in step 1-2) above uses a vertical interferometric scanning technique, the ellipsometry measurement uses a 50 ° to 60 ° variable angle measurement, the fitting calculation uses an optical wavelength range of 400nm to 950nm, and the standard dispersion model includes, but is not limited to, the Lorentz model.
The specific content of the step 2) is as follows:
2-1) establishing a geometric model of a multi-depth high-aspect-ratio microstructure for a sample to be tested: defining the sample to be measured as the upper surface-the lower surface of the microstructure i I=1, 2, … …;
2-2) establishing an optical model of a multi-depth high aspect ratio microstructure for a sample to be measured: the method comprises the steps of taking the upper surface of a sample to be measured as a 0 optical path datum plane, establishing a reflected light electric field vector model of the upper surface and the lower surface of a microstructure based on Snell's law, and superposing the reflected light electric field vectors of the sample to be measured to obtain an optical model of the reflected light electric field vector of the sample to be measured;
2-3) obtaining a reflectance spectrum of the sample to be measured: and (2) obtaining a reflection spectrum of the sample to be measured by using a measuring instrument, and calculating a reflectivity spectrum of the sample to be measured by using the reflection spectrum of the sample to be measured, the corrected light transmittance spectrum of the measuring instrument, the light source luminescence spectrum and the light quantum efficiency spectrum of the spectrometer obtained in the step 1).
The specific content of the step 3) is as follows: according to the fast Fourier transform curve of the reflectivity spectrum of the sample to be detected obtained in the step 2), calculating the half-width of the maximum peak value of the fast Fourier transform curve, and recording the half-width of the maximum peak value as the depth consistency evaluation parameter of the microstructure with the high aspect ratio of the sample to be detected. The smaller the value of the parameter is, the better the consistency of the high aspect ratio microstructure depth of the sample to be measured is.
Compared with the prior art, the invention has the beneficial effects that:
(1) The relative depth value of the upper surface of the wafer to the bottom of the microstructure can be measured.
(2) The signal-to-noise ratio of the measurement signal of the visible light wavelength is relatively high, and the depth consistency measurement sensitivity can be improved.
(3) The optical signal measuring flow and the optical structure are simple, and the optical signal measuring flow and the optical structure are easy to integrate into the silicon wafer etching equipment to realize the on-line measurement of the microstructure depth and the consistency thereof.
Drawings
FIG. 1 is a process flow diagram of an optical measurement and evaluation method of the present invention;
fig. 2 is a schematic structural view of the measuring instrument of the present invention.
In the figure: 1-a light source; 2-beam splitters; 3-lens; 4-sample stage; 5-spectrometer.
Detailed Description
The design idea of the optical measurement and evaluation method for the depth consistency of the microstructure with high aspect ratio provided by the invention is as follows: processing a silicon-based high aspect ratio monomer microstructure standard sample, and detecting a surface roughness value; determining the depth value and the refractive index of a standard sample; correcting dark field noise and light transmittance coefficient of the measuring instrument; establishing a geometric model and an optical model of the multi-depth high-aspect-ratio microstructure; obtaining a reflectivity spectrum of a sample to be detected; obtaining microstructure depth consistency evaluation parameters of a sample to be tested: obtaining a fast Fourier transform curve of the reflectivity spectrum of a sample to be detected, calculating the half-width of the maximum peak value of the curve, and defining the half-width as a microstructure depth consistency evaluation parameter, wherein the smaller the value of the evaluation parameter is, the better the depth consistency is.
The invention will now be further described with reference to the accompanying drawings and specific examples, which are in no way limiting.
In this embodiment, the sample to be measured is in the form of a high aspect ratio microstructure on a silicon wafer, and the depth of the microstructure is less than 100 μm.
As shown in fig. 1, the optical measurement and evaluation of the depth uniformity of the high aspect ratio microstructure of the sample to be measured is performed according to the following steps.
Step 1) processing a standard sample, determining the depth value and the refractive index of the standard sample, and correcting the dark field noise and the light transmittance spectrum of the measuring instrument to obtain the corrected dark field noise and light transmittance spectrum of the measuring instrument. The specific contents are as follows:
1-1) processing a standard sample: thinning and polishing the 4-inch silicon wafer to obtain a 4-inch silicon wafer with the thickness of 300 mu m and the surface roughness of better than 2 nm; etching a high aspect ratio monomer microstructure standard sample with the depth of 100 mu m by adopting a Bosch process; and (3) verifying the surface roughness value by using an optical profiler, wherein the optical profiler adopts a vertical interference scanning technology.
1-2) determining the depth value and refractive index of the standard sample: and defining the standard sample as an upper surface-microstructure lower surface structure, measuring the depth value of the single microstructure of the standard sample by using an optical profiler, using a standard dispersion model as a silicon-based physical optical model, and fitting and calculating the refractive index of the standard sample according to ellipsometric parameters measured by an ellipsometer. In the present invention, the standard dispersion model includes, but is not limited to, a Lorentz model, the ellipsometry measurement employs a 50 ° to 60 ° variable angle measurement, and the fitting calculation uses an optical wavelength range of 400nm to 950nm.
1-3) obtaining corrected dark field noise and light transmittance spectra of the measuring instrument:
as shown in fig. 2, the structure of the measuring instrument is that the measuring instrument includes: a light source 1, a beam splitter 2, a lens 3, a sample stage 4 and a spectrometer 5. The light source 1 is selected from, but not limited to, halogen lamps and xenon lamps; the beam splitter 2 can be a beam splitter prism or a beam splitter flat plate; the lens 3 may be, but is not limited to, a cemented lens or a micro-objective lens; sample stage 4 may be selected from, but is not limited to, a three-axis manual displacement stage; the spectrometer 5 may be, but is not limited to, a fiber optic spectrometer with a wavelength measurement range of 350nm to 1000 nm.
Mounting the standard sample to a sample stage 4 of a measuring instrument; closing or shielding the light source 1, measuring a dark field reflection spectrum of the upper surface of the standard sample, and correcting dark field noise of a measuring instrument; turning on a light source and measuring a bright field reflection spectrum of the upper surface of the standard sample, wherein the process is as follows: the outgoing light beam of the light source 1 enters the light splitter 2, the transmitted light generated by the light splitter 2 is converged by the lens 3 and enters the standard sample on the sample table 4, the reflected light beam of the standard sample is reflected by the light splitter 2 and enters the spectrometer 5, and the spectrometer 5 performs reflection spectrum data acquisition, so that a bright field reflection spectrum of the upper surface of the standard sample is obtained.
And (3) calculating an optical reflectivity spectrum by using the refractive index of the standard sample obtained in the step (1-2), and correcting the light transmittance spectrum of the measuring instrument by using the light source luminescence spectrum and the spectrometer light quantum efficiency spectrum to obtain the corrected light transmittance spectrum of the measuring instrument.
Step 2) establishing a geometric model and an optical model of the multi-depth high-aspect ratio microstructure aiming at the sample to be detected, and obtaining the reflectivity spectrum of the sample to be detected. The specific contents are as follows:
2-1) building a geometric model of a multi-depth high aspect ratio microstructure: defining the sample to be measured as the upper surface-the lower surface of the microstructure i I=1, 2, … ….
2-2) creating an optical model of a multi-depth high aspect ratio microstructure: and (3) taking the upper surface of the sample to be measured as a 0 optical path datum plane, establishing a reflected light electric field vector model of the upper surface of the sample to be measured and the lower surface of the microstructure based on Snell's law, and superposing the reflected light electric field vectors of the sample to be measured to obtain an optical model of the reflected light electric field vector of the sample to be measured.
2-3) measuring the reflectance spectrum of the sample to be measured by using a measuring instrument as shown in FIG. 2, turning on a light source (the procedure is the same as before); and calculating the reflectivity spectrum of the sample to be measured by using the reflection spectrum of the sample to be measured, the corrected light transmittance spectrum of the measuring instrument obtained in the step 1), the light source luminescence spectrum and the spectrometer light quantum efficiency spectrum.
And 3) calculating the fast Fourier transform curve according to the fast Fourier transform curve of the reflectivity spectrum of the sample to be detected obtained in the step 2-3), carrying out spline interpolation, extracting the half-width of the maximum peak value of the interpolation curve, and recording the half-width of the maximum peak value as the depth consistency evaluation parameter of the microstructure with the high aspect ratio of the sample to be detected. The smaller the value of this parameter, the better the depth consistency. In the invention, the microstructure depth is obtained by utilizing a spectrum fast Fourier transform method, specifically, the microstructure depth value can be determined by utilizing the peak coordinates of a Fourier transform curve of a microstructure reflection spectrum by establishing an optical model of the microstructure, and the innovation point of the invention is not related, so that the description is omitted.
In summary, the present invention provides an optical measurement and evaluation method for depth uniformity of high aspect ratio microstructure. The method adopts visible light wavelength to measure, and measures the relative depth value from the upper surface of the silicon wafer to the bottom of the microstructure; the signal-to-noise ratio is relatively high, and the measurement sensitivity of depth consistency is improved; the optical signal measuring flow and the optical structure are simple, and the optical signal measuring flow and the optical structure are easy to integrate into the silicon wafer etching equipment to realize the on-line measurement of the microstructure depth and the consistency thereof.
Although the invention has been described above with reference to the accompanying drawings, the invention is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many modifications may be made by those of ordinary skill in the art without departing from the spirit of the invention, which fall within the protection of the invention.
Claims (4)
1. An optical measurement and evaluation method for depth consistency of a high aspect ratio microstructure, comprising the following steps:
1) Processing a standard sample, determining the depth value and the refractive index of the standard sample, correcting the dark field noise and the light transmittance spectrum of the measuring instrument, and obtaining the corrected dark field noise and light transmittance spectrum of the measuring instrument:
2) Establishing a geometric model and an optical model of a multi-depth high-aspect-ratio microstructure aiming at a sample to be detected, and obtaining a reflectivity spectrum of the sample to be detected;
3) Obtaining microstructure depth consistency evaluation parameters of the sample to be tested according to the reflectivity spectrum of the sample to be tested obtained in the step 2);
the specific content of the step 1) is as follows:
1-1) processing a standard sample: processing a silicon-based high aspect ratio monomer microstructure standard sample, and verifying the surface roughness value of a silicon wafer;
1-2) determining the depth value and refractive index of the standard sample: defining the standard sample as an upper surface-microstructure lower surface structure, measuring the depth value of the single microstructure of the standard sample by using an optical profiler, using a standard dispersion model as a physical optical model of a silicon wafer, and fitting and calculating the refractive index of the standard sample according to ellipsometric parameters measured by an ellipsometer;
1-3) obtaining corrected dark field noise and light transmittance spectra of the measuring instrument: mounting the standard sample to a sample stage of a measuring instrument; closing or shielding a light source, measuring a dark field reflection spectrum of the upper surface of the standard sample, and correcting dark field noise of a measuring instrument; turning on a light source and measuring a bright field reflection spectrum of the upper surface of a standard sample, calculating an optical reflectivity spectrum by using the refractive index of the standard sample obtained in the step 1-2), and correcting a light transmittance spectrum of a measuring instrument by using a light source luminescence spectrum and a spectrometer light quantum efficiency spectrum to obtain a corrected light transmittance spectrum of the measuring instrument;
the specific content of the step 2) is as follows:
2-1) establishing a geometric model of a multi-depth high-aspect-ratio microstructure for a sample to be tested: defining the sample to be measured as the upper surface-the lower surface of the microstructure i I=1, 2, … …;
2-2) establishing an optical model of a multi-depth high aspect ratio microstructure for a sample to be measured: the method comprises the steps of taking the upper surface of a sample to be measured as a 0 optical path datum plane, establishing a reflected light electric field vector model of the upper surface and the lower surface of a microstructure based on Snell's law, and superposing the reflected light electric field vectors of the sample to be measured to obtain an optical model of the reflected light electric field vector of the sample to be measured;
2-3) obtaining a reflectance spectrum of the sample to be measured: obtaining a reflection spectrum of a sample to be measured by using a measuring instrument, and calculating a reflectivity spectrum of the sample to be measured by using the reflection spectrum of the sample to be measured, the corrected light transmittance spectrum of the measuring instrument, the light source luminescence spectrum and the light quantum efficiency spectrum of the spectrometer, which are obtained in the step 1);
the specific content of the step 3) is as follows:
according to the fast Fourier transform curve of the reflectivity spectrum of the sample to be detected obtained in the step 2), calculating the half-width of the maximum peak value of the fast Fourier transform curve, and recording the half-width of the maximum peak value as the depth consistency evaluation parameter of the microstructure with the high aspect ratio of the sample to be detected.
2. The method for optically measuring and evaluating depth uniformity of a high aspect ratio microstructure according to claim 1, wherein the optical profiler employs a vertical interferometric scanning technique; the ellipsometry measurement adopts 50-60 degree variable angle measurement; the fitting calculation uses an optical wavelength range of 400nm to 950nm; the standard dispersion model includes, but is not limited to, the Lorentz model.
3. The method for optical measurement and evaluation of high aspect ratio microstructure depth uniformity according to claim 1, wherein the measuring instrument comprises: the device comprises a light source, a beam splitter, a lens, a sample table and a spectrometer, wherein light beams emitted by the light source are converged to a standard sample through the beam splitter by the lens, reflected light beams of the standard sample are reflected by the beam splitter, and reflected spectrum data acquisition is carried out by the spectrometer.
4. The method for optically measuring and evaluating the depth uniformity of a high aspect ratio microstructure according to claim 1, wherein a smaller value of the evaluation parameter of the depth uniformity of the high aspect ratio microstructure of the sample to be measured indicates a better depth uniformity of the high aspect ratio microstructure of the sample to be measured.
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