CN111355477A - 一种(MV)[SbBr5]材料在光控开关中的应用 - Google Patents
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- 239000000463 material Substances 0.000 title claims abstract description 52
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 24
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 claims description 15
- 238000001035 drying Methods 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 9
- 238000007126 N-alkylation reaction Methods 0.000 claims description 5
- 238000001914 filtration Methods 0.000 claims description 5
- 238000011065 in-situ storage Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 3
- 238000007605 air drying Methods 0.000 claims 1
- 238000011534 incubation Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 18
- 238000005286 illumination Methods 0.000 abstract description 11
- 230000008859 change Effects 0.000 abstract description 6
- 230000004044 response Effects 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 abstract description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 238000004321 preservation Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000007664 blowing Methods 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- FIKAKWIAUPDISJ-UHFFFAOYSA-L paraquat dichloride Chemical compound [Cl-].[Cl-].C1=C[N+](C)=CC=C1C1=CC=[N+](C)C=C1 FIKAKWIAUPDISJ-UHFFFAOYSA-L 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 231100000701 toxic element Toxicity 0.000 description 1
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Abstract
本发明提供了一种(MV)[SbBr5]材料在光控开关中的应用,将(MV)[SbBr5]材料制成电阻,然后将所述电阻制备成电磁铁用于光电开关。本发明将(MV)[SbBr5]材料制备成电阻后,由于(MV)[SbBr5]材料的光电效应,使得电阻在根据光照条件而改变,在不进行光照时电阻变大,当收到光照时电阻变小,通过在光照条件下电阻的改变,实现光电开关的控制。实验结果表明,本发明提供的光控开关反应灵敏,在无光时,能够迅速闭合,使电路运行,在有光亮时能够快速断开开关。
Description
技术领域
本发明涉及光电材料领域,尤其涉及一种(MV)[SbBr5]材料在光控开关中的应用。
背景技术
光电效应是指能够将光能转化为电能的效应,具备光电效应的材料称为光电材料。光电效应包括内光电效应和外光电效应,而内光电效应又可分为光生伏特效应和光电导效应。光生伏特效应是指在光照作用下材料产生电压的特性,被应用在太阳能电池方面,光电导效应是指在光照作用下材料的电阻率发生了改变,从而引起电流的变化,常被用来制作光电探测器。
金属有机杂化材料将有机和无机材料的优良特性结合在一起,具有较长的载流子寿命、较长的载流子扩散长度和高载流子迁移率等特点,可广泛地应用于激光、太阳能电池、光电探测器和光敏晶体管等光电器件中。同时金属有机杂化材料制备工艺简单,对环境污染较小,有助于降低工业生产成本和简化工艺流程。
近年来,围绕着光电系统开展了各种关键技术研究,主要包括:太阳能电池、光电管、光电探测器等,但是还未有关于(MV)[SbBr5]材料在光控开关中的具体应用。
发明内容
本发明的目的在于提供一种(MV)[SbBr5]材料在光控开关中的应用,本发明提供的光控开关反应灵敏,在无光时,能够迅速闭合,使电路运行,在有光亮时能够快速断开开关。
为了实现上述发明目的,本发明提供以下技术方案:
本发明提供了一种(MV)[SbBr5]材料在光控开关中的应用,将 (MV)[SbBr5]材料制成电阻,然后将所述电阻制备成电磁铁用于光电开关。
优选地,所述电磁铁包括铁芯、绕制于所述铁芯表面的线圈、与所述线圈串联的恒定电压源、开关以及电阻。
本发明还提供了所述(MV)[SbBr5]材料的制备方法,包括以下步骤:
(1)将4’4-联吡啶、SbBr3、氢溴酸溶液和甲醇混合后进行原位N-烷基化反应,得到混合物;
(2)将所述步骤(1)中的混合物在170~200℃保温20~30小时,得到 (MV)[SbBr5]材料。
优选地,所述步骤(1)中氢溴酸溶液中氢溴酸的质量浓度为55%~57%。
优选地,所述步骤(1)中4’4-联吡啶与SbBr3的物质的量之比为1:1~1: 2。
优选地,所述步骤(1)中4’4-联吡啶与氢溴酸的物质的量之比为1:1~1: 3。
优选地,所述步骤(2)中的保温在电热鼓风干燥箱中进行。
优选地,所述步骤(2)中保温后还包括对所述保温后的产物依次进行清洗、过滤和干燥。
本发明提供了一种(MV)[SbBr5]材料在光控开关中的应用,将 (MV)[SbBr5]材料制成电阻,然后将所述电阻制备成电磁铁用于光电开关。本发明将(MV)[SbBr5]材料制备成电阻后,由于(MV)[SbBr5]材料的光电效应,使得电阻在根据光照条件而改变,在不进行光照时电阻变大,当收到光照时电阻变小,通过在光照条件下电阻的改变,改变电磁铁的磁力,从而实现光电开关的控制。实验结果表明,本发明提供的光控开关反应灵敏,在无光时,能够迅速闭合,使电路运行,在有光亮时能够快速断开开关。
附图说明
图1为本发明实施例1提供的光控开关的结构图,其中,A为零线,B 为火线,C为触点,D为显示装置,E为衔铁,F为弹簧,G为电磁铁;
图2为本发明实施例1制备的(MV)[SbBr5]材料的性能测试曲线图;
图3为本发明实施例1制备的简易光电探测器结构图。
具体实施方式
本发明提供了一种(MV)[SbBr5]材料在光控开关中的应用,将 (MV)[SbBr5]材料制成电阻,然后将所述电阻制备成电磁铁用于光电开关。
本发明对所述电阻的制备的操作没有特殊的限定,采用本领域常用的制备方法电阻的技术方案即可。
在本发明中,所述电磁铁优选包括铁芯、绕制于所述铁芯表面的线圈、与所述线圈串联的恒定电压源、开关以及电阻。本发明对于所述电磁铁的制备的操作没有特殊的限定,采用本领域常用的制备电磁铁的技术方案即可。
本发明对所述光电开关的结构没有特殊的限定,按照本领域技术人员熟知的光电开关的结构组装即可。在本发明的实施例中,所述光电开关的结构优选如图1所示,包括零线,火线,触点,显示装置,衔铁,弹簧,电磁铁。
本发明还提供了所述(MV)[SbBr5]材料的制备方法,包括以下步骤:
(1)将4’4-联吡啶、SbBr3、氢溴酸溶液和甲醇混合,原位N-烷基化反应得到混合物;
(2)将所述步骤(1)中的混合物在170~200℃保温20~30小时,得到 (MV)[SbBr5]材料。
本发明将4’4-联吡啶、SbBr3、氢溴酸溶液和甲醇混合进行原位N-烷基化反应。在本发明中,所述氢溴酸溶液中氢溴酸的质量浓度优选为 55%~57%,更优选为56%。本发明对于所述氢溴酸溶液的来源没有没有特殊的要求,采用本领域技术人员熟知的市售产品即可。
在本发明中,所述4’4-联吡啶与SbBr3的物质的量之比优选为1:1~1: 2,更优选为3:4。在本发明中,所述4’4-联吡啶与氢溴酸的物质的量之比优选为1:1~1:3,更优选为1:2。本发明通过将各组分的用量限定在上述范围内,在溶剂热体系下,以甲醇和4’4-联吡啶发生原位N-烷基化反应生成甲基紫精双阳离子。
本发明对于所述4’4-联吡啶与SbBr3的来源没有没有特殊的要求,采用本领域技术人员熟知的市售产品即可。
得到混合物后,本发明将所述混合物在170~200℃保温20~30小时,得到(MV)[SbBr5]材料。在本发明中,所述温度优选为190℃,保温时间优选为 24小时。本发明通过将混合物的反应温度和反应时间控制在上述范围内,能够进一步保证得到的(MV)[SbBr5]材料具有优异的晶体结构,从而具有优异的光电效应和较长的载流子寿命、较长的载流子扩散长度、高载流子迁移率等特点。
在本发明中,所述保温优选在电热鼓风干燥箱中进行。
在本发明中,所述保温后优选还包括对所述保温后的产物依次进行冷却、清洗、过滤和干燥。本发明对于产物进行冷却、清洗、过滤和干燥的具体操作没有特殊的限定,能够将产物中的杂质去除即可。在本发明中,所述冷却时间优选为45~50小时,更优选为48小时,所述冷却速率优选为3~4℃ /小时,更优选为3.5℃/小时。在本发明中,所述清洗优选为:将产物进行清洗;所述清洗的次数优选为2~5次,更优选为3次,所述清洗物优选为有机醇,更优选为甲醇。在本发明中,所述干燥优选为在干燥箱中干燥,所述干燥温度优选为30~70℃,更优选为40℃。
本发明将(MV)[SbBr5]材料制备成电阻后,由于(MV)[SbBr5]材料的光电效应,使得电阻在根据光照条件而改变,在不进行光照时电阻变大,当收到光照时电阻变小,通过在光照条件下电阻的改变,改变电磁铁的磁力,从而实现光电开关的控制。实验结果表明,本发明提供的光控开关反应灵敏,在无光时,能够迅速闭合,使电路运行,在有光亮时能够快速断开开关。
下面将结合本发明中的实施例,对本发明中的技术方案进行清楚、完整地描述。显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例1
一种应用(MV)[SbBr5]材料的光控开关,其结构如图1所示,其中A为零线,B为火线,C为触点,D为显示装置,E为衔铁,F为弹簧,G为电磁铁,其中所述显示装置为两个灯泡,所述电磁铁包括铁芯、绕制于所述铁芯表面的线圈、与所述线圈串联的恒定电压源、开关以及电阻。
所述电阻为(MV)[SbBr5]材料,其制备方法为:
(1)将0.044g4’4-联吡啶,0.141g的SbBr3,0.5mL的氢溴酸(55%-57%), 10mL甲醇依次加入反应釜内衬里,充分反应后将反应釜内衬放入反应釜中,密封;
(2)将反应釜放于电热鼓风干燥箱中,设置温度参数为从25℃用5小时升温至190℃,190℃保温24小时,最后用48小时降至室温25℃;
(3)将反应后的材料转移至20mL小烧杯,用胶头滴管吸取适量甲醇加入烧杯内,用另一支胶头滴管搅拌,过滤,重复清洗、过滤工艺3次后将将剩余物质在40℃干燥箱中干燥,然后将黑色(MV)[SbBr5]晶体挑拣出来封瓶保存。
(MV)[SbBr5]材料的性能如图2所示。
本发明进一步公开了(MV)[SbBr5]的光电效应的性能测试方法,按照以下步骤进行:
(1)选择晶体形状规整,尺度大,缺陷少的棒状(MV)[SbBr5]晶体放置在不导电的玻璃基板上,在晶体的两端点上两个银电极,并在电热鼓风干燥箱中加热10分钟使其变干导电,形成一个简易的光电探测器,如图3所示;
(2)将上述探测器置于TF2000铁电仪薄膜探针台,将探针连接到电极上,在黑暗条件下分别测试出15V电压下通过材料的电流曲线;
(3)分别将功率均为20mw,波长为650nm,532nm,405nm的激光照射在样品表面,分别在15V电压下测出通过材料的电流曲线;
在光照条件下该材料表现出了光电效应,使得(MV)[SbBr5]的电阻率随着光照强度发生改变,这使得(MV)[SbBr5]具备了应用于光电器件的性质,
(MV)[SbBr5]材料通过水热法在较低温度即可合成,同时又不含铅等有毒元素,在光照作用下电流明显增大,并随着激光频率的增大电流出现明显的递增趋势。
由图1所示装置可知,当电路正常工作时,电磁铁中有微弱的电流通过,由此而产生的磁场不足以使衔铁与连接电路的触点分开,照明电路正常工作;当电磁铁中有较大电流通过时,衔铁被吸下时,照明电路断开;其中涉及原理是(MV)[SbBr5]光照时电阻变小,在不进行光照时电阻变大。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (8)
1.一种(MV)[SbBr5]材料在光控开关中的应用,将(MV)[SbBr5]材料制成电阻,然后将所述电阻制备成电磁铁用于光电开关。
2.根据权利要求1所述的应用,其特征在于,所述电磁铁包括铁芯、绕制于所述铁芯表面的线圈、与所述线圈串联的恒定电压源、开关以及电阻。
3.根据权利要求1所述的应用,其特征在于,所述(MV)[SbBr5]材料的制备方法包括以下步骤:
(1)将4’4-联吡啶、SbBr3、氢溴酸溶液和甲醇混合后进行原位N-烷基化反应,得到混合物;
(2)将所述步骤(1)中的混合物在170~200℃保温20~30小时,得到(MV)[SbBr5]材料。
4.根据权利要求3所述的应用,其特征在于,所述步骤(1)中氢溴酸溶液中氢溴酸的质量浓度为55%~57%。
5.根据权利要求3所述的应用,其特征在于,所述步骤(1)中4’4-联吡啶与SbBr3的物质的量之比为1:1~1:2。
6.根据权利要求3所述的应用,其特征在于,所述步骤(1)中4’4-联吡啶与氢溴酸的物质的量之比为1:1~1:3。
7.根据权利要求3所述的应用,其特征在于,所述步骤(2)中的保温在电热鼓风干燥箱中进行。
8.根据权利要求3所述的应用,其特征在于,所述步骤(2)中保温后还包括对所述保温后的产物依次进行清洗、过滤和干燥。
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