CN111354845A - Light-emitting diode carrier plate with preset conductive bumps - Google Patents
Light-emitting diode carrier plate with preset conductive bumps Download PDFInfo
- Publication number
- CN111354845A CN111354845A CN201811590731.0A CN201811590731A CN111354845A CN 111354845 A CN111354845 A CN 111354845A CN 201811590731 A CN201811590731 A CN 201811590731A CN 111354845 A CN111354845 A CN 111354845A
- Authority
- CN
- China
- Prior art keywords
- conductive bumps
- emitting diode
- led
- light emitting
- diode carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 229910000679 solder Inorganic materials 0.000 claims description 14
- 239000010410 layer Substances 0.000 claims 6
- 239000002345 surface coating layer Substances 0.000 claims 2
- 238000000034 method Methods 0.000 abstract description 7
- 238000007747 plating Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000012858 packaging process Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a light-emitting diode carrier plate with preset conductive bumps, which comprises a substrate, a circuit layer and a plurality of conductive bumps, wherein the substrate is provided with an LED bearing surface, the circuit layer is formed on the LED bearing surface and is provided with a plurality of electric contacts, the conductive bumps are respectively formed on the top surfaces of the electric contacts, and the conductive bumps are respectively used for electrically connecting a plurality of LED crystal grains. Therefore, the yield of the whole process is improved.
Description
Technical Field
The present invention relates to a light emitting diode (led) carrier, and more particularly, to a surface mount led (SMDLED) carrier.
Background
The manufacturing process of the light emitting diode (hereinafter referred to as LED) can be divided into upstream epitaxial manufacturing, midstream chip manufacturing, downstream packaging test and system assembly, wherein after the LED crystal grain is manufactured, the LED crystal grain is adhered to a light emitting diode carrier plate (hereinafter referred to as LED carrier plate), and a light emitting diode assembly (hereinafter referred to as LED assembly) is manufactured after a series of manufacturing processes such as die bonding, curing, routing, sealing, cutting and the like.
In the existing packaging technology, the bumps of the LED dies are electrically connected with the electrical contacts of the substrate through solder, but the process difficulty of forming the bumps on the LED dies is obviously increased and the yield is difficult to increase because the size of the existing LED dies is smaller and smaller.
Disclosure of Invention
In view of the above, the present invention provides a light emitting diode carrier that is helpful for improving the yield of LED die package.
In order to achieve the above object, the present invention provides a light emitting diode carrier board with a conductive bump in advance, which includes a substrate, a circuit layer and a plurality of conductive bumps, wherein the substrate has a light emitting diode carrying surface (hereinafter referred to as LED carrying surface), the circuit layer is formed on the LED carrying surface, the circuit layer has a plurality of electrical contacts, the conductive bumps are respectively formed on top surfaces of the electrical contacts, and the conductive bumps are respectively used for electrically connecting a plurality of LED dies.
The conductive bumps are preset on the LED carrier plate, so that the bumps do not need to be additionally formed on the LED crystal grains, and the manufacturing difficulty of forming the bumps on the carrier plate is far lower than that of forming the bumps on the LED crystal grains, so that the problem that the manufacturing yield of the bumps of the LED crystal grains is poor in the conventional LED packaging process can be solved, and the yield of the whole process is improved.
Other features and embodiments of the present invention will be described in detail below with reference to the drawings.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic cross-sectional view of one embodiment of the present invention;
FIGS. 2 to 4 are schematic views illustrating a process according to one embodiment of the present invention;
fig. 5 and 6 are schematic diagrams illustrating a process of mounting an LED die according to an embodiment of the invention.
Description of the symbols
1LED die 2 electrode
10 substrate 11LED carrying surface
20 circuit layer 21 electrical contacts
211 surface plating 30 conductive bump
40 anti-welding layer 41 windowing
Detailed Description
The positional relationship described in the following embodiments includes: the top, bottom, left and right, unless otherwise indicated, are based on the orientation of the elements in the drawings.
Referring to fig. 1, in one embodiment of the present invention, an LED carrier includes a substrate 10, a circuit layer 20, a plurality of conductive bumps 30 and a solder mask layer 40. The LED carrier plate can be applied to the packaging process of SMD LED components.
The substrate 10 itself has one or more insulating layers such as epoxy, glass cloth (glass), polyester, or other materials commonly used to make circuit board substrates. In addition, the substrate 10 has an LED carrying surface 11, and the LED carrying surface 11 may have one or more LED carrying areas (not shown) for mounting a plurality of LED dies respectively thereon.
The circuit layer 20 is formed on the LED carrying surface 11, and the circuit layer 20 has a plurality of electrical contacts 21, the number of the electrical contacts 21 is determined according to the number of the LED dies to be carried on the LED carrying surface 11, wherein one portion of the electrical contacts 21 is electrically connected to the p-pole of the LED dies through the conductive bumps 30, and the other portion of the electrical contacts 21 is electrically connected to the n-pole of the LED dies through the conductive bumps 30. The circuit layer 20 is made of a conductive material, such as copper. In order to provide sufficient current transmission capability, the electrical contact 21 may further have a surface plating layer 211, and the material of the surface plating layer 211 may be, for example, nickel, gold, silver, palladium, or an alloy thereof.
The conductive bumps 30 are formed on the top surfaces of the electrical contacts 21, respectively, since in the present embodiment, the electrical contacts 21 have the surface plating layer 211, in this case, the conductive bumps 30 are formed on the top surfaces of the surface plating layer 211, and the conductive bumps 30 are respectively used for electrically connecting a plurality of LED dies. The conductive bump 30 is made of tin, for example.
The solder mask layer 40 is formed on the LED carrying surface 11, the solder mask layer 40 partially covers the circuit layer 20, but the electrical contacts 21 and the conductive bumps 30 are not covered by the solder mask layer 40, wherein the tops of the conductive bumps 30 are higher than the top surface of the solder mask layer 40 so as to electrically connect with the LED die. The solder mask layer 40 is an insulating layer, and the material thereof may be epoxy resin, silicone resin, polyimide resin, phenol resin, fluorine resin, silicon dioxide or aluminum oxide. In the embodiment shown in fig. 1, the solder mask layer 40 has a substantially flush top surface. In other possible embodiments, the height of the solder mask layer between two electrical contacts 21 as shown in fig. 1 is at the same height or slightly below the top surface of the electrical contacts.
Fig. 2 to 4 illustrate one embodiment of the preparation process of the LED carrier. First, as shown in fig. 2, at least one copper layer is formed on the LED carrying surface 11 of the substrate 10, and then the copper layer is patterned to form the circuit layer 20; next, as shown in fig. 3, a solder mask layer 40 is formed on the LED carrying surface 11, and a window 41 is formed at a position corresponding to the electrical contact 21, so that the electrical contact 21 is exposed; then, as shown in fig. 4, a surface treatment is performed on the top surfaces of the electrical contacts 21 to form a surface plating layer 211, and then the conductive bumps 30 are formed on the top surfaces of the surface plating layer 211, so as to form the LED carrier shown in fig. 1.
Fig. 5 and fig. 6 are schematic diagrams illustrating the process of mounting the LED die on the LED carrier, that is, the electrodes 2 of the LED die 1 are aligned to the conductive bumps 30, respectively, and then the LED die 1 and the conductive bumps 30 are electrically connected by reflow soldering, so as to facilitate the subsequent LED packaging process.
In summary, the difficulty of forming the bumps on the carrier is much lower than that of forming the bumps on the LED dies, so the invention can solve the problem of poor yield of the bumps on the LED dies in the conventional LED packaging process, thereby improving the yield of the overall process.
The above-described embodiments and/or implementations are only for illustrating the preferred embodiments and/or implementations of the present technology, and are not intended to limit the implementations of the present technology in any way, and those skilled in the art may make modifications or changes to other equivalent embodiments without departing from the scope of the technical means disclosed in the present disclosure, but should be construed as the technology or implementations substantially the same as the present technology.
Claims (4)
1. A light emitting diode carrier plate with preset conductive bumps is characterized by comprising:
a substrate having a light emitting diode carrying surface;
the circuit layer is formed on the light-emitting diode bearing surface and is provided with a plurality of electric contacts;
and the conductive bumps are respectively formed on the top surfaces of the electric contacts and are respectively used for electrically connecting the LED crystal grains.
2. The light emitting diode carrier of claim 1, further comprising a solder mask layer formed on the light emitting diode carrier surface, wherein the solder mask layer partially covers the circuit layer, and the electrical contacts and the conductive bumps are not covered by the solder mask layer.
3. The light emitting diode carrier as claimed in claim 2, wherein the conductive bumps are higher than the top surface of the solder mask layer.
4. The light emitting diode carrier as claimed in claim 1, wherein each of the electrical contacts further has a surface coating layer, and the conductive bumps are respectively formed on top of the surface coating layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811590731.0A CN111354845A (en) | 2018-12-20 | 2018-12-20 | Light-emitting diode carrier plate with preset conductive bumps |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811590731.0A CN111354845A (en) | 2018-12-20 | 2018-12-20 | Light-emitting diode carrier plate with preset conductive bumps |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111354845A true CN111354845A (en) | 2020-06-30 |
Family
ID=71196901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811590731.0A Pending CN111354845A (en) | 2018-12-20 | 2018-12-20 | Light-emitting diode carrier plate with preset conductive bumps |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111354845A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200843064A (en) * | 2007-04-18 | 2008-11-01 | Phoenix Prec Technology Corp | Surface structure of a packaging substrate and a fabricating method thereof |
| TW201021136A (en) * | 2008-11-18 | 2010-06-01 | Unimicron Technology Corp | Method for fabricating conductive bump and circuit board structure with the same |
| CN103794515A (en) * | 2012-10-30 | 2014-05-14 | 宏启胜精密电子(秦皇岛)有限公司 | Chip packaging substrate, chip packaging structure, and method for manufacturing same |
| CN208014702U (en) * | 2018-02-14 | 2018-10-26 | 同泰电子科技股份有限公司 | Micro light-emitting diode module |
| CN209056520U (en) * | 2018-12-20 | 2019-07-02 | 同泰电子科技股份有限公司 | It is preset with the light emitting diode support plate of conductive bump |
-
2018
- 2018-12-20 CN CN201811590731.0A patent/CN111354845A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200843064A (en) * | 2007-04-18 | 2008-11-01 | Phoenix Prec Technology Corp | Surface structure of a packaging substrate and a fabricating method thereof |
| TW201021136A (en) * | 2008-11-18 | 2010-06-01 | Unimicron Technology Corp | Method for fabricating conductive bump and circuit board structure with the same |
| CN103794515A (en) * | 2012-10-30 | 2014-05-14 | 宏启胜精密电子(秦皇岛)有限公司 | Chip packaging substrate, chip packaging structure, and method for manufacturing same |
| CN208014702U (en) * | 2018-02-14 | 2018-10-26 | 同泰电子科技股份有限公司 | Micro light-emitting diode module |
| CN209056520U (en) * | 2018-12-20 | 2019-07-02 | 同泰电子科技股份有限公司 | It is preset with the light emitting diode support plate of conductive bump |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9305889B2 (en) | Leadless integrated circuit package having standoff contacts and die attach pad | |
| US7271466B2 (en) | Semiconductor device with sidewall wiring | |
| US9615461B2 (en) | Wiring module including wiring substrate having border portion separating two side metallic foils and manufacturing method of wiring module | |
| US20130001618A1 (en) | Light-emitting element mounting substrate and led package | |
| JP2001015679A (en) | Semiconductor device and manufacture thereof | |
| US9445503B2 (en) | Carrier device, electrical device having a carrier device and method for producing same | |
| US9147796B2 (en) | Method for manufacturing LED device with structure for precisely locating LEDs thereon | |
| US9307647B2 (en) | Electronic device | |
| KR20120079325A (en) | Semiconductor package and methods of fabricating the same | |
| CN110707203A (en) | Light emitting device, manufacturing method thereof and light emitting device module comprising light emitting device | |
| JPH09312355A (en) | Semiconductor device and its manufacture | |
| US10050187B1 (en) | Light-emitting device and manufacturing method of light-emitting device | |
| JP5912471B2 (en) | Semiconductor device | |
| CN111354845A (en) | Light-emitting diode carrier plate with preset conductive bumps | |
| CN209056520U (en) | It is preset with the light emitting diode support plate of conductive bump | |
| US20200321228A1 (en) | Method of manufacturing a lead frame, method of manufacturing an electronic apparatus, and electronic apparatus | |
| CN107735861B (en) | High frequency module | |
| US20210082795A1 (en) | Semiconductor device packages and method for manufacturing the same | |
| JP6476478B2 (en) | Light emitting device and method for manufacturing light emitting device | |
| TWM580798U (en) | LED carrier board having preset conductive bump | |
| TW202025441A (en) | Led carrier board having preset bumps | |
| KR100891652B1 (en) | Substrate for mounting a semiconductor chip on | |
| TWI681572B (en) | High covering rate led carrier board | |
| KR101827567B1 (en) | Light emitting device and method for manufacturing the same | |
| US20200303610A1 (en) | Semiconductor light-emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200630 |