CN111337810A - Thermal resistance testing device for SMD-3 packaged power device - Google Patents
Thermal resistance testing device for SMD-3 packaged power device Download PDFInfo
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- CN111337810A CN111337810A CN202010207223.0A CN202010207223A CN111337810A CN 111337810 A CN111337810 A CN 111337810A CN 202010207223 A CN202010207223 A CN 202010207223A CN 111337810 A CN111337810 A CN 111337810A
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- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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Abstract
The thermal resistance testing device for the SMD-3 packaged power device comprises a radiating substrate, an epoxy frame and an electrode lead-out component; the epoxy frame is mounted on the heat dissipation substrate; the SMD-3 packaging power device to be tested is arranged in the epoxy frame, a second leading-out end electrode of the SMD-3 packaging power device to be tested is in contact with the radiating substrate, and a first leading-out end electrode and a third leading-out end electrode on two sides of the second leading-out end electrode are connected with the thermal resistance tester through the electrode leading-out assembly; the first lead-out electrode and the third lead-out electrode are spaced from the heat-dissipating substrate. The thermal resistance testing device for the SMD-3 packaged power device solves the problem of thermal resistance testing of the SMD-3 packaged power semiconductor device.
Description
Technical Field
The invention relates to the technical field of semiconductor device testing, in particular to a thermal resistance testing device for an SMD-3 packaged power device.
Background
The semiconductor power device is one of basic components of electronic products, and has wide application in the power electronic industry. With the development of the technology, the power of the device is improved, and the packaging size is reduced, so that stricter test is provided for the heat dissipation performance of the power device. An important quantitative index for measuring the heat dissipation capacity of the device is the thermal resistance. Thermal resistance is also an important technical index and characteristic of electronic packaging, and is a commonly used evaluation parameter in thermal analysis.
The thermal resistance value has important significance on the aspects of production, use and reliability of the power device. In the production aspect: providing the thermal resistance value of the device in a product manual to guide a user to use; the heat dissipation condition of the device package can be evaluated, and products with the optimal thermal performance structure can be produced by selecting the package type, the bonding material, the package process and the like. In the use aspect: through the thermal resistance value, the working junction temperature can be quickly predicted and the thermal reliability can be designed; the thermal performance of different manufacturers or different packaged devices can be compared through a thermal resistance test; thermal simulation can be carried out by taking the thermal resistance value as an input parameter of the model. In terms of reliability: determining junction temperature of the power device through the thermal resistance value to set an electric aging working condition; judging failure analysis caused by thermal performance, finding and improving problems in a packaging process and a packaging material; and evaluating the thermal characteristics, predicting the reliability and designing, and prolonging the average service life of the components.
When the thermal resistance test needs to apply power to the tested device, the tube shell achieves good heat dissipation conditions, namely the bottom of the tube shell where the chip is located needs to be in contact with the metal heat dissipation block, and heat is conducted to the temperature-controllable heat dissipation platform through the metal heat dissipation block.
An SMD-3(Surface Mount Devices) package is a package type commonly used in the power device field, and a case structure thereof is shown in fig. 1. When testing the junction thermal resistance of the SMD-3 packaged power semiconductor device, power needs to be applied to the device through three lead-out terminal electrodes of the tube shell, and meanwhile, the heat needs to be conducted from the chip to the bottom of the tube shell below the chip to the temperature-controllable heat dissipation platform along the one-dimensional direction. Three lead-out terminal electrodes of the SMD-3 package tube are in a plane, and the lead-out terminal electrode with the largest area (the lead-out terminal electrode in the middle position in fig. 1) needs to contact with a metal heat dissipation block for heat dissipation. The SMD-3 package structure is characterized by a large difficulty in thermal resistance testing, and a testing apparatus needs to be specially designed for the package structure.
Disclosure of Invention
The invention aims to provide a thermal resistance testing device for an SMD-3 packaged power device, which solves the problem that the thermal resistance testing of an SMD-3 packaged power semiconductor device is difficult.
In order to achieve the aim, the invention provides a thermal resistance testing device for an SMD-3 packaged power device, which comprises a heat dissipation substrate, an epoxy frame and an electrode lead-out component, wherein the heat dissipation substrate is provided with a plurality of through holes; the epoxy frame is mounted on the heat dissipation substrate; the SMD-3 packaging power device to be tested is arranged in the epoxy frame, and a second leading-out end electrode of the SMD-3 packaging power device to be tested is in contact with the heat dissipation substrate, so that heat dissipation is realized and electric connection is formed at the same time; the first leading-out end electrode and the third leading-out end electrode on two sides of the second leading-out end electrode are connected with a thermal resistance tester through the electrode leading-out assembly; the first lead-out electrode and the third lead-out electrode are spaced from the heat-dissipating substrate.
The thermal resistance testing device for the SMD-3 packaged power device is characterized in that two grooves are formed in one surface of the heat dissipation substrate, the two grooves are parallel to each other and are spaced at a certain distance, and electrode leading-out end fixing holes are formed in the two grooves; the first leading-out end electrode and the third leading-out end electrode are respectively opposite to one groove, and the second leading-out end electrode is in contact with the heat dissipation substrate between the two grooves.
The thermal resistance testing device for the SMD-3 packaged power device comprises an electrode leading-out component, an electrode lead-out component and a testing module, wherein the electrode leading-out component comprises an elastic wiring terminal and an electrode leading-out wire plug; the first leading-out end electrode and the third leading-out end electrode are respectively provided with one set of the electrode leading-out assembly.
The thermal resistance testing device for the SMD-3 packaged power device further comprises a thermocouple assembly, and the second leading-out end electrode is connected with the thermal resistance tester through the thermocouple assembly.
The thermal resistance testing device for the SMD-3 packaged power device is characterized in that two grooves are formed in one surface of the heat dissipation substrate, the two grooves are parallel to each other and are spaced at a certain distance, and electrode leading-out end fixing holes are formed in the two grooves; a thermocouple mounting hole is arranged between the two grooves; the first leading-out end electrode and the third leading-out end electrode are respectively opposite to one groove, and the second leading-out end electrode is in contact with the heat dissipation substrate between the two grooves.
The thermal resistance testing device for the SMD-3 packaged power device comprises a thermocouple assembly, a thermocouple plug and a thermocouple connector, wherein the thermocouple assembly comprises an elastic binding post loaded with a thermocouple and the thermocouple plug is connected with the elastic binding post loaded with the thermocouple through a wire; the elastic binding post loaded with the thermocouple penetrates through the thermocouple mounting hole to be connected with a second leading-out end electrode, and the thermocouple plug is connected with the thermal resistance tester.
The thermal resistance testing device for the SMD-3 packaged power device is characterized in that the radiating substrate is partially hollowed for wiring.
In the device for testing the thermal resistance of the SMD-3 packaged power device, the surface of the heat dissipation substrate provided with the groove is also provided with an epoxy frame mounting hole, and the epoxy frame is provided with a mounting hole.
In the thermal resistance testing device for the SMD-3 packaged power device, in the crusting thermal resistance test based on the transient double-interface method, the radiating substrate is arranged on the temperature-controllable radiating platform, and two groups of structure curves are obtained by coating or not coating the heat-conducting silicone grease on the radiating substrate in contact with the second leading-out terminal electrode.
In the thermal resistance testing device for the SMD-3 packaged power device, when the thermal resistance is tested by the crusting thermal resistance formula, the radiating substrate is arranged on the temperature-controllable radiating platform, the radiating substrate in close contact with the second leading-out terminal electrode is coated with the heat-conducting silicone grease, and the thermocouple acquires the bottom temperature of the tube shell of the SMD-3 packaged power device to be tested.
Compared with the prior art, the invention has the beneficial technical effects that:
according to the thermal resistance testing device for the SMD-3 packaged power device, the radiating substrate is in pressing contact with the radiating leading-out end (the second leading-out end electrode) of the SMD-3 packaged power device to be tested, so that the requirement that heat is conducted downwards along the one-dimensional direction is met, and the junction thermal resistance value of the SMD-3 packaged power device to be tested can be accurately tested, so that an important parameter index can be provided for evaluating the radiating performance of the device, and the thermal resistance testing device has great significance for optimizing the packaging design of the power device, improving the reliability of the device and prolonging the service life of the device.
Drawings
The thermal resistance testing device for the SMD-3 packaged power device is provided by the following embodiments and the attached drawings.
Fig. 1 is a schematic structural diagram of an SMD-3 packaged power semiconductor device package.
FIG. 2 is an exploded view of a thermal resistance testing device for SMD-3 packaged power devices according to a preferred embodiment of the present invention.
FIG. 3 is a schematic diagram of an exemplary application of a thermal resistance testing apparatus for SMD-3 packaged power devices in a preferred embodiment of the present invention.
FIG. 4 is a schematic diagram of a thermal resistance testing apparatus for SMD-3 packaged power devices according to a preferred embodiment of the present invention.
Detailed Description
The thermal resistance testing device for the SMD-3 packaged power device of the present invention will be described in further detail with reference to FIGS. 1-4.
Fig. 1 is a schematic structural diagram of an SMD-3 packaged power semiconductor device package. As shown in fig. 1, the SMD-3 package power semiconductor device case has three lead electrodes, i.e., a first lead electrode 21, a second lead electrode 22, and a third lead electrode 23; the first leading-out end electrode 21, the second leading-out end electrode 22 and the third leading-out end electrode 23 are located in one plane, the first leading-out end electrode 21 and the third leading-out end electrode 23 are located on two sides of the second leading-out end electrode 22, and the area of the second leading-out end electrode 22 in the three leading-out end electrodes is the largest.
The thermal resistance test is based on two methods. The method comprises the following steps: by the formula of crusting thermal resistance
Calculating to obtain thermal resistance value, wherein the temperature T of the tube shellcObtained by thermocouple testing. The method 2 comprises the following steps: a method for testing thermal resistance of crusting based on transient double interface method (JEDEC51-14) comprises coating heat-conducting silicone grease and not coating heat-conducting silicone grease on the bottom of a tube shell respectively to obtain two groups of structural curves, and dividing the curves into two groupsThe departure point is the incrustation thermal resistance value, and the method does not use a thermocouple.
FIG. 2 is a schematic exploded view of a thermal resistance testing device for SMD-3 packaged power devices according to a preferred embodiment of the present invention; FIG. 3 is a schematic diagram of an exemplary application of the thermal resistance testing apparatus for SMD-3 packaged power devices in the preferred embodiment of the present invention.
Referring to fig. 2 and 3, the thermal resistance testing device for the SMD-3 packaged power device of the present embodiment includes a heat dissipation substrate 3, an epoxy frame 1, an electrode lead-out assembly and a thermocouple assembly; the electrode lead-out assembly comprises an elastic wiring terminal 4 and an electrode lead-out wire plug 5, wherein the elastic wiring terminal 4 is connected with the electrode lead-out wire plug 5 through a wire; the thermocouple assembly comprises a thermocouple-carrying elastic terminal 9 and a thermocouple plug 10, and the thermocouple-carrying elastic terminal 9 is connected with the thermocouple plug 10 through a wire.
In this embodiment, the elastic terminal 4 is a spring pressing terminal, the elastic terminal 9 carrying a thermocouple is a spring pressing terminal carrying a thermocouple, and the thermocouple is a K-type thermocouple.
As shown in fig. 3, during the test, the heat dissipation substrate 3 is placed on the temperature-controllable heat dissipation platform 24; the epoxy frame 1 is mounted on the heat dissipation substrate 3; the SMD-3 packaged power device to be tested is arranged in the epoxy frame 1, and the surface of a tube shell of the SMD-3 packaged power device to be tested, which is provided with three leading-out terminal electrodes, faces the heat dissipation substrate 3; the thermal resistance tester is characterized in that two sets of electrode leading-out assemblies are arranged, elastic binding posts 4 of the two sets of electrode leading-out assemblies are respectively connected with a first leading-out end electrode 21 and a third leading-out end electrode 23 of an SMD-3 packaged power device to be tested, and electrode leading-out wire plugs 5 of the two sets of electrode leading-out assemblies are both connected with a thermal resistance tester; the second leading-out terminal electrode 22 is in close contact with the heat dissipation substrate 3, the heat dissipation substrate 3 is provided with a leading terminal, an electric wire is led out from the leading terminal to be connected with the thermal resistance tester, and the heat dissipation substrate 3 is used for heat dissipation and simultaneously realizes the connection of the second leading-out terminal electrode 22 and the thermal resistance tester.
Referring to fig. 2, two grooves 7 and an epoxy frame mounting hole 6 are formed in one surface of the heat dissipation substrate 3, the two grooves 7 are parallel to each other and spaced at a certain distance, and electrode lead-out end fixing holes 8 are formed in the two grooves 7. The heat dissipation substrate 3 is partially hollowed out for wiring.
As shown in fig. 2, the epoxy frame 1 is provided with a mounting hole.
In this embodiment, the heat dissipation substrate 3 is a copper heat dissipation substrate.
The thermal resistance testing device for the SMD-3 packaged power device is suitable for the two thermal resistance testing methods. With regard to the method 1, the heat dissipation substrate 3 is further provided with a thermocouple mounting hole 2, as shown in fig. 2.
FIG. 4 is a schematic diagram of a thermal resistance testing apparatus for SMD-3 packaged power devices according to a preferred embodiment of the present invention.
The method 1 is adopted to test the thermal resistance:
referring to a in fig. 4, when the method 1 is used for testing the thermal resistance, the epoxy frame 1 is fastened on the heat dissipation substrate 3 through the mounting hole, the epoxy frame mounting hole 6 and the screw on the epoxy frame 1, the mounting position of the epoxy frame 1 spans two grooves 7, and the thermocouple mounting hole 2 is arranged between the two grooves 7; the SMD-3 packaging power device to be tested is placed in the epoxy frame 1, the SMD-3 packaging power device to be tested is tightly pressed by an external pressure device, a first leading-out end electrode 21 and a third leading-out end electrode 23 of the SMD-3 packaging power device to be tested are respectively opposite to one groove 7, namely the first leading-out end electrode 21 and the third leading-out end electrode 23 are not in contact with the radiating substrate 3, a second leading-out end electrode 22 of the SMD-3 packaging power device to be tested is positioned between the two grooves 7 and is in close contact with the radiating substrate 3 (between the two grooves 7), a thermocouple mounting hole 2 is arranged below the second leading-out end electrode 22, the radiating substrate 3 in close contact with the second leading-out end electrode 22 is coated with heat-conducting silicone grease, and a lead end of the radiating substrate 3 is led out to be connected with a thermal resistance tester; the elastic binding post 4 of one set of electrode leading-out assembly penetrates through an electrode leading-out end fixing hole 8 in one groove 7 and is connected with a first leading-out end electrode 21, and the elastic binding post 4 of the other set of electrode leading-out assembly penetrates through an electrode leading-out end fixing hole 8 in the other groove 7 and is connected with a third leading-out end electrode 23; the elastic binding post 9 loaded with the thermocouple passes through the thermocouple mounting hole 2 and is connected with a second leading-out end electrode 22; the electrode outgoing line plugs 5 of the two sets of electrode outgoing assemblies and the thermocouple plug 10 of the thermocouple assembly are both connected with a thermal resistance tester, and the electric wires of the electrode outgoing assemblies and the electric wires of the thermocouple assembly are both routed through the hollowed-out part of the radiating substrate 3. The thermal resistance tester applies power to the SMD-3 packaged power device to be tested, samples forward voltage data of a temperature sensitive diode in the chip, monitors the bottom temperature of a tube shell of the SMD-3 packaged power device to be tested through a thermocouple, tests, and displays and stores a test result on the thermal resistance tester.
The second leading-out terminal electrode 22 of the SMD-3 packaged power device to be tested is in close contact with the heat dissipation substrate 3, so that the electric connection and heat dissipation functions are realized; the heat dissipation substrate 3 is electrically connected to the second lead-out electrode 22, and the heat dissipation substrate 3 is provided with a groove to prevent the first lead-out electrode 21 and the third lead-out electrode 23 from contacting the heat dissipation substrate 3, thereby achieving electrical separation.
Testing thermal resistance by using the method 2:
referring to a part B in FIG. 4, when the method 2 is used for testing the thermal resistance, the epoxy frame 1 is fastened on the heat dissipation substrate 3 through the mounting holes on the epoxy frame, the epoxy frame mounting holes 6 and the screws, the mounting position of the epoxy frame 1 spans two grooves 7, and the thermocouple mounting hole 2 is not arranged between the two grooves 7; the SMD-3 packaging power device to be tested is placed in the epoxy frame 1, the SMD-3 packaging power device to be tested is tightly pressed by an external pressure device, a first leading-out end electrode 21 and a third leading-out end electrode 23 of the SMD-3 packaging power device to be tested are respectively opposite to one groove 7, namely the first leading-out end electrode 21 and the third leading-out end electrode 23 are not in contact with the heat dissipation substrate 3, and a second leading-out end electrode 22 of the SMD-3 packaging power device to be tested is positioned between the two grooves 7 and is in close contact with the heat dissipation substrate 3 (between the two grooves 7); the elastic binding post 4 of one set of electrode leading-out assembly penetrates through an electrode leading-out end fixing hole 8 in one groove 7 and is connected with a first leading-out end electrode 21, and the elastic binding post 4 of the other set of electrode leading-out assembly penetrates through an electrode leading-out end fixing hole 8 in the other groove 7 and is connected with a third leading-out end electrode 23; the electrode lead-out wire plugs 5 of the two sets of electrode lead-out assemblies are connected with a thermal resistance tester, and wires of the electrode lead-out assemblies are routed through the hollowed part of the radiating substrate 3. The test comprises the following steps: 1) the heat-conducting silicone grease is not coated on the heat-radiating substrate 3 which is in close contact with the second leading-out terminal electrode 22, the thermal resistance tester applies power to the SMD-3 packaging power device to be tested and samples the forward voltage data of the temperature sensitive diode in the chip for testing to obtain a first group of structural curves; 2) heat-conducting silicone grease is coated on the heat-radiating substrate 3 which is in close contact with the second leading-out terminal electrode 22, the thermal resistance tester applies power to an SMD-3 packaging power device to be tested, and samples the forward voltage data of a temperature-sensitive diode in the chip to carry out testing to obtain a second group of structural curves; 3) separate points for the two sets of structure curves were found.
The second leading-out terminal electrode 22 of the SMD-3 packaged power device to be tested is in close contact with the heat dissipation substrate 3, so that the electric connection and heat dissipation functions are realized; the heat dissipation substrate 3 is electrically connected to the second lead-out electrode 22, and the heat dissipation substrate 3 is provided with a groove to prevent the first lead-out electrode 21 and the third lead-out electrode 23 from contacting the heat dissipation substrate 3, thereby achieving electrical separation.
As can be seen from fig. 4, the thermal resistance testing device for the SMD-3 packaged power device of the present embodiment can be applied to the two thermal resistance testing methods only by designing the length of the grooves 7 to meet the requirement and arranging the thermocouple mounting holes 2 in a partial region between the two grooves 7.
Claims (10)
- The thermal resistance testing device for the SMD-3 packaged power device is characterized by comprising a radiating substrate, an epoxy frame and an electrode lead-out component; the epoxy frame is mounted on the heat dissipation substrate; the SMD-3 packaging power device to be tested is arranged in the epoxy frame, and a second leading-out end electrode of the SMD-3 packaging power device to be tested is in contact with the heat dissipation substrate and is electrically connected with the thermal resistance tester through the heat dissipation substrate; the first leading-out end electrode and the third leading-out end electrode on two sides of the second leading-out end electrode are connected with a thermal resistance tester through the electrode leading-out assembly; the first lead-out electrode and the third lead-out electrode are spaced from the heat-dissipating substrate.
- 2. The device for testing thermal resistance of an SMD-3 packaged power device as claimed in claim 1, wherein two grooves are formed on one surface of the heat dissipating substrate, the two grooves being parallel to each other and spaced apart by a predetermined distance, and electrode lead-out fixing holes being formed in both of the two grooves; the first leading-out end electrode and the third leading-out end electrode are respectively opposite to one groove, and the second leading-out end electrode is in contact with the heat dissipation substrate between the two grooves.
- 3. The thermal resistance testing device for the SMD-3 packaged power device according to claim 2, wherein said electrode lead-out assembly includes an elastic terminal and an electrode lead-out pin, said elastic terminal is connected with said electrode lead-out pin through a wire, said electrode lead-out pin is used for connecting said thermal resistance tester, said elastic terminal is mounted in said electrode lead-out terminal fixing hole; the first leading-out end electrode and the third leading-out end electrode are respectively provided with one set of the electrode leading-out assembly.
- 4. The SMD-3 packaged power device thermal resistance testing apparatus as claimed in claim 1, wherein said thermal resistance testing apparatus further includes a thermocouple assembly, and a second lead-out terminal electrode is connected to said thermal resistance tester through said thermocouple assembly.
- 5. The device for testing thermal resistance of an SMD-3 packaged power device according to claim 4, wherein two grooves are formed on one surface of said heat-dissipating substrate, said two grooves are parallel to each other and spaced apart from each other by a predetermined distance, and electrode terminal fixing holes are formed in both of said two grooves; a thermocouple mounting hole is arranged between the two grooves; the first leading-out end electrode and the third leading-out end electrode are respectively opposite to one groove, and the second leading-out end electrode is in contact with the heat dissipation substrate between the two grooves.
- 6. The SMD-3 packaged power device thermal resistance testing apparatus as claimed in claim 5, wherein said thermocouple assembly includes a thermocouple-carrying elastic terminal and a thermocouple plug, said thermocouple-carrying elastic terminal being connected with said thermocouple plug by a wire; the elastic binding post loaded with the thermocouple penetrates through the thermocouple mounting hole to be connected with a second leading-out end electrode, and the thermocouple plug is connected with the thermal resistance tester.
- 7. The SMD-3 packaged power device thermal resistance testing apparatus of claim 1 wherein said heat dissipating substrate portion is hollowed out for routing.
- 8. The thermal resistance testing device for the SMD-3 packaged power device as claimed in claim 1, wherein said heat-dissipating substrate has a recessed surface and an epoxy frame mounting hole formed on said recessed surface, said epoxy frame having a mounting hole formed thereon.
- 9. The device for testing thermal resistance of an SMD-3 packaged power device of claim 1 wherein in the case thermal resistance test based on the transient double interface method, the heat dissipation substrate is placed on a temperature-controllable heat dissipation platform, and two sets of structural curves are obtained by coating or not coating heat conductive silicone grease on the heat dissipation substrate in contact with the second lead-out terminal electrode.
- 10. The device for testing the thermal resistance of the SMD-3 packaged power device as claimed in claim 4, wherein when the thermal resistance is tested by the crusting thermal resistance formula, the heat dissipation substrate is placed on the temperature-controllable heat dissipation platform, the heat dissipation substrate in close contact with the second lead-out electrode is coated with heat-conducting silicone grease, and the thermocouple collects the bottom temperature of the package of the SMD-3 packaged power device to be tested.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010207223.0A CN111337810A (en) | 2020-03-23 | 2020-03-23 | Thermal resistance testing device for SMD-3 packaged power device |
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| CN202010207223.0A CN111337810A (en) | 2020-03-23 | 2020-03-23 | Thermal resistance testing device for SMD-3 packaged power device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112198189A (en) * | 2020-08-26 | 2021-01-08 | 北京卫星制造厂有限公司 | Power module thermal resistance testing device based on static measurement method |
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Application publication date: 20200626 |