CN111336914A - Wafer warping degree measuring device and method - Google Patents
Wafer warping degree measuring device and method Download PDFInfo
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- CN111336914A CN111336914A CN202010220481.2A CN202010220481A CN111336914A CN 111336914 A CN111336914 A CN 111336914A CN 202010220481 A CN202010220481 A CN 202010220481A CN 111336914 A CN111336914 A CN 111336914A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B5/00—Measuring arrangements characterised by the use of mechanical techniques
- G01B5/0002—Arrangements for supporting, fixing or guiding the measuring instrument or the object to be measured
- G01B5/0004—Supports
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B5/00—Measuring arrangements characterised by the use of mechanical techniques
- G01B5/30—Measuring arrangements characterised by the use of mechanical techniques for measuring the deformation in a solid, e.g. mechanical strain gauge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The embodiment of the invention discloses a device and a method for measuring the warping degree of a wafer, wherein the device comprises: the supporting component is used for bearing the wafer; a conductive member for conducting charge to the wafer; the mechanical sensing component comprises a charged structure, the charged structure and the supporting component are arranged at a certain distance, and the mechanical sensing component is used for sensing the interaction force between the charged structure and the wafer; the moving component is connected with the mechanical sensing component and used for controlling the mechanical sensing component to move along a certain track so as to enable the mechanical sensing component to sense the interaction force of the charged structure and different positions on the wafer; and the data processing module is used for receiving the sensing result of the mechanical sensing component and calculating the warping degree of the wafer according to the sensing result.
Description
Technical Field
The invention relates to the technical field of wafer detection, in particular to a device and a method for measuring the warping degree of a wafer.
Background
In semiconductor device fabrication, it is generally necessary to provide a wafer and form a patterned film structure on the wafer to prepare various circuit device structures. The material of the wafer is generally a silicon wafer, and the diameter of the current mainstream silicon wafer is 300 mm.
In the manufacturing process of the 3D NAND memory chip, tens of hundreds of film layers need to be stacked and deposited on the surface of the wafer, and when the number of the stacked film layers on the wafer reaches 128 layers, 196 layers or even more, the stress between the film layers is increasingly greater, and the warping (bow) degree of the wafer is increasingly obvious. The warpage of the wafer directly causes difficulty in subsequent processes and even failure to form effective functional structural units, so the warpage (bow value) of the wafer needs to be detected. However, conventional measurement methods and instruments are increasingly difficult to meet due to technical limitations.
Disclosure of Invention
Accordingly, embodiments of the present invention provide an apparatus and a method for measuring warpage of a wafer to solve at least one of the problems in the related art.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
the embodiment of the invention provides a wafer warping degree measuring device, which comprises:
the supporting component is used for bearing the wafer;
a conductive member for conducting charge to the wafer;
the mechanical sensing component comprises a charged structure, the charged structure and the supporting component are arranged at a certain distance, and the mechanical sensing component is used for sensing the interaction force between the charged structure and the wafer;
the moving component is connected with the mechanical sensing component and used for controlling the mechanical sensing component to move along a certain track so as to enable the mechanical sensing component to sense the interaction force of the charged structure and different positions on the wafer;
and the data processing module is used for receiving the sensing result of the mechanical sensing component and calculating the warping degree of the wafer according to the sensing result.
In the above-mentioned scheme, the first step of the method,
the data processing module is also used for establishing a three-dimensional mechanical model according to the sensing result and obtaining the warping condition of the wafer at any position according to the three-dimensional mechanical model.
In the above-mentioned scheme, the first step of the method,
further comprising: and the display module is used for displaying the three-dimensional mechanical model.
In the above-mentioned scheme, the first step of the method,
the supporting component comprises more than two supporting bodies, the supporting bodies are distributed at a circumferential position separately, and the distance from one end of each supporting body close to the circle center is smaller than or equal to the radius of the wafer.
In the above-mentioned scheme, the first step of the method,
the conductive part is specifically used for conducting electric charges of a first electrical property to the wafer so as to enable the wafer to be charged with the first electrical property;
the charged structure is provided with a first electrical property, and the mechanical sensing part is specifically used for sensing the magnitude of a repulsive force between the charged structure and the wafer; or, the charged structure has a second electrical property opposite to the first electrical property, and the mechanical sensing component is specifically configured to sense an attractive force between the charged structure and the wafer.
In the above solution, the moving component is configured to control the mechanical sensing component to move along a certain track, and includes:
and controlling the mechanical sensing part to move in a direction parallel to the bearing surface of the supporting part.
In the above solution, the sensing result includes a first sensing result for the upper surface of the wafer and a second sensing result for the lower surface of the wafer.
The embodiment of the invention also provides a wafer warpage measuring method, which comprises the following steps:
placing a wafer on a support member;
conducting charge to the wafer to charge the wafer;
controlling a mechanical sensing part to move along a certain track, wherein the mechanical sensing part comprises a charged structure;
sensing interaction forces at different positions on the charged structure and the wafer to obtain a sensing result;
and calculating the warping degree of the wafer according to the sensing result.
In the above-mentioned scheme, the first step of the method,
the method further comprises the following steps: and establishing a three-dimensional mechanical model according to the sensing result.
In the above-mentioned scheme, the first step of the method,
the supporting component comprises more than two supporting bodies, the supporting bodies are distributed at a circumferential position separately, and the distance from one end of each supporting body close to the circle center is smaller than or equal to the radius of the wafer.
In the above-mentioned scheme, the first step of the method,
the conducting charge to the wafer includes: conducting electric charge of a first electrical property to the wafer so as to enable the wafer to be charged with the first electrical property;
the charged structure has a first electrical property; the sensing interaction forces at different locations on the charged structure and the wafer includes: sensing the magnitude of repulsive force at different positions on the charged structure and the wafer; or, the charged structure has a second electrical property opposite to the first electrical property, and the sensing the interaction force between the charged structure and the wafer at different positions includes: and sensing the attractive force of the charged structure and the wafer at different positions.
In the above aspect, the controlling the mechanical sensing part to move along a certain trajectory includes:
and controlling the mechanical sensing part to move in a direction parallel to the bearing surface of the supporting part.
In the above solution, the sensing result includes a first sensing result for the upper surface of the wafer and a second sensing result for the lower surface of the wafer.
The wafer warpage measuring device and method provided by the embodiment of the invention, wherein the device comprises: the supporting component is used for bearing the wafer; a conductive member for conducting charge to the wafer; the mechanical sensing component comprises a charged structure, the charged structure and the supporting component are arranged at a certain distance, and the mechanical sensing component is used for sensing the interaction force between the charged structure and the wafer; the moving component is connected with the mechanical sensing component and used for controlling the mechanical sensing component to move along a certain track so as to enable the mechanical sensing component to sense the interaction force of the charged structure and different positions on the wafer; and the data processing module is used for receiving the sensing result of the mechanical sensing component and calculating the warping degree of the wafer according to the sensing result. Therefore, the on-line measurement of the warping degree of the wafer is realized, and the processing technology is conveniently monitored and the technological parameters are conveniently adjusted; in addition, the wafer warpage measuring device provided by the embodiment of the invention solves the problem that the warpage of a wafer with large deformation cannot be effectively measured, and has the advantages of low cost, simple measuring method and high precision of a measuring result.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
Fig. 1a is a front view of a wafer warp measuring device according to an embodiment of the present invention;
fig. 1b is a side view of a wafer warp measuring apparatus according to an embodiment of the present invention;
fig. 1c is a top view of a wafer warp measuring device according to an embodiment of the present invention;
fig. 2 is a schematic flowchart of a wafer warp measurement method according to an embodiment of the present invention;
fig. 3a to fig. 3c are schematic process diagrams of a wafer warpage measuring method according to an embodiment of the present invention.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the present invention; that is, not all features of an actual embodiment are described herein, and well-known functions and structures are not described in detail.
In the drawings, the size of layers, regions, elements, and relative sizes may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
It will be understood that when an element or layer is referred to as being "on" … …, "adjacent to … …," "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on … …," "directly adjacent to … …," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention. And the discussion of a second element, component, region, layer or section does not necessarily imply that a first element, component, region, layer or section is present in the invention.
Spatial relationship terms such as "under … …", "under … …", "below", "under … …", "above … …", "above", and the like, may be used herein for ease of description to describe the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below … …" and "below … …" can encompass both an orientation of up and down. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In the following description, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.
A method for measuring the warping degree of a wafer is to measure by utilizing the principle of white light interference, the method obtains an optical signal reflected by the surface of the wafer by emitting polarized light by a light source and irradiating the polarized light to the wafer, forms an interference signal between the light reflected by a reference plane and the light reflected by a standard surface, and then analyzes the surface appearance of the wafer by analyzing phase difference; and obtaining the shape information of the wafer through the height difference of the surface, and further calculating to obtain the warping degree of the wafer. Another method for measuring the warpage of the wafer is a method for obtaining an image definition value by using the focal length from a measuring lens to the surface of a silicon wafer, wherein the image obtained when the measuring lens is away from a standard wafer (or called an 'ideal wafer', which means a wafer without warpage in an ideal state, namely a wafer without deformation and completely horizontal) by a certain distance is clearest (the specific definition can be used as a threshold value to represent a numerical value), and the distance from the measuring lens to the ideal wafer at the moment is recorded; when the measured wafer deforms, the focal length changes, the definition of the image changes accordingly, the image is made to be clear again by moving the distance between the measuring lens and the measured wafer, the moving distance of the measuring lens is recorded, the operation is repeated, and the deformation degree of the measured wafer is obtained by recording the moving distance of a series of measuring lenses.
The measuring method is used for the conditions that the number of chip layers is small and the deformation of the wafer is small, but when the number of the chip layers is more and the deformation of the wafer is more and more large, the wafer cannot be well fixed due to overlarge warping degree, and therefore the measurement is more and more difficult.
Based on the limitations of the above technologies, embodiments of the present invention provide a wafer warpage measuring apparatus and a wafer warpage measuring method. Embodiments of the present disclosure are described in detail below with reference to the accompanying drawings.
First, please refer to fig. 1a to 1 c; fig. 1a is a front view of a wafer warpage measuring apparatus according to an embodiment of the present invention; fig. 1b is a side view of a wafer warp measuring apparatus according to an embodiment of the present invention; fig. 1c is a top view of a wafer warp measuring apparatus according to an embodiment of the present invention.
The wafer warpage measuring device provided by the embodiment of the invention comprises:
a support member 11 for carrying the wafer 80;
an electrically conductive member 14 for conducting electrical charge to the wafer 80;
the mechanical sensing component 12 comprises a charged structure, the charged structure is arranged at a certain distance from the supporting component 11, and the mechanical sensing component 12 is used for sensing the interaction force between the charged structure and the wafer 80;
the moving component 13 is connected with the mechanical sensing component 12 and is used for controlling the mechanical sensing component 12 to move along a certain track, so that the mechanical sensing component 12 can sense the interaction force of the charged structure and different positions on the wafer 80;
and a data processing module (not shown in the figure) for receiving the sensing result of the mechanical sensing component 13 and calculating the warpage of the wafer 80 according to the sensing result.
The wafer warpage online measurement method and the device have the advantages that the wafer warpage online measurement is realized, and the influence on the process flow is reduced; in addition, the wafer warpage measuring device provided by the embodiment of the invention has the advantages of low cost, simple measuring method and high precision of the measuring result.
Here, the wafer 80 is a substrate for manufacturing a semiconductor device, and may also be referred to as a base plate, a substrate, or the like. The wafer is made of silicon, germanium, GaAs, InP, GaN or the like. In one embodiment, the wafer is a silicon wafer.
The support member 11 may comprise more than two supports, and fig. 1c shows the case where the number of supports is four.
In order to bear the wafer, the supporting bodies are distributed at a circumferential position separately, and the distance from one end of each supporting body close to the circle center is smaller than or equal to the radius of the wafer. It should be understood that the distance from the other end of the supporting body far away from the circle center to the circle center is larger than the radius of the wafer.
The device may further comprise an upper cover 101 and a lower cover 102; the supporting member 11, the mechanical sensing member 12, the moving member 13, and the conductive member 14 are located inside a cavity surrounded by the upper cover 101 and the lower cover 102. Each support body of the support member 11 may be fixedly installed inside the lower cover 102, for example, on an inner wall of the lower cover 102; in other embodiments, the support member 11 may further include a support ring (as shown in fig. 1 c) besides the support body, and the support bodies are connected by the support ring, and the support ring is fixedly installed inside the lower cover 102, for example, fixed on the inner wall of the lower cover 102.
In an embodiment, the supporting member has a region for contacting the wafer, and a distance between an outer edge of the region (i.e., a circumferential position of the wafer when the wafer is carried) and an inner wall of the cavity of the apparatus (e.g., an inner wall of the lower cover) is greater than a width of the mechanical sensing member, so as to allow the mechanical sensing member to pass through a gap between the wafer and the inner wall of the lower cover, and move from an upper (or lower) surface of the wafer to a lower (or upper) surface of the wafer. In embodiments where the support member comprises more than two supports, the mechanical sensing member passes between two adjacent supports.
The conductive member 14 may be embodied as a charged rod. One end of the conductive component is positioned on or can move to the wafer to be tested; the other end of the conductive member may extend beyond the upper cover to be connected to an external power source. In the embodiment shown in FIG. 1a, the conductive member extends from the top of the lid to the top surface of the wafer under test; the conductive component is perpendicular to the upper surface of the wafer to be tested.
It will be appreciated that since the wafer is of a semiconductor material, the wafer may be electrically charged by the conductive member being in contact with the wafer.
The mechanical sensing component 12 includes a charged structure. In the embodiment shown in fig. 1a, the charged structure is located directly below the mechanical sensing component; the charged structure is shown as having a positive charge. The charged structure may in particular be a charge bar, such as a positive charge bar or a negative charge bar.
In one embodiment, the conductive member is specifically configured to conduct a charge of a first electrical property to the wafer to charge the wafer with the first electrical property; the charged structure has a first electrical property, and the mechanical sensing component is specifically used for sensing the magnitude of a repulsive force between the charged structure and the wafer.
In another embodiment, the conductive member is specifically configured to conduct a charge of a first electrical property to the wafer to charge the wafer with the first electrical property; the charged structure has a second electrical property opposite to the first electrical property, and the mechanical sensing component is specifically configured to sense an attractive force between the charged structure and the wafer.
Fig. 1a shows the conductive member 14 used to conduct negative charges to the wafer 80, the charged structure with a positive point, and the mechanical sensing member 12 used to sense the magnitude of the attractive force between the charged structure and the wafer 80.
The mechanical sensing component can specifically measure the magnitude of the interaction force between the charged structure and the corresponding wafer upper surface region right below the charged structure, in other words, the sensing range of the mechanical sensing component is limited.
In order to realize mechanical sensing at different positions on the whole surface of the wafer, the apparatus further includes a moving component 13 connected to the mechanical sensing component 12, where the moving component 13 is configured to control the mechanical sensing component 12 to move in a certain track, so that the mechanical sensing component 12 performs sensing of interaction forces at different positions on the charged structure and the wafer 80.
The moving component may include two parts, namely a driving device and a mechanical arm, wherein the mechanical arm is connected to the mechanical sensing component (here, the mechanical arm may refer to a bending portion located on the mechanical sensing component 12 and connected to the mechanical sensing component 12 in fig. 1 a), and the driving device drives the mechanical arm to move so as to drive the mechanical sensing component to move.
In a specific embodiment, the moving component is configured to control the mechanical sensing component to move along a certain track, and includes: and controlling the mechanical sensing part to move in a direction parallel to the bearing surface of the supporting part.
The locus of movement of the mechanical sensing component can traverse the surface of the wafer. In one embodiment, the moving track of the mechanical sensing component may traverse the upper surface of the wafer; or traversing the lower surface of the wafer; or traversing the upper surface and the lower surface of the wafer. For the case that the track of the movement of the mechanical sensing part traverses the upper surface and the lower surface of the wafer, the moving part may control the mechanical sensing part to move from the side surface of the wafer to the other surface of the wafer.
In a specific application, the moving component can firstly control the charged structure of the mechanical sensing component to move a certain distance away from the surface of the wafer to be measured; at this time, the mechanical sensing part can sense the corresponding attraction or repulsion; and then, controlling the mechanical sensing component to move along the surface of the wafer to be detected in a certain track, wherein the force sensed by the mechanical sensing component changes.
And the data processing module receives the sensing result of the mechanical sensing component and calculates the warping degree of the wafer according to the sensing result.
The sensing result can comprise the magnitude of the interaction force sensed by the mechanical sensing component and the change condition of the sensed interaction force; in other words, the actual magnitude of the interaction force between the charged structure and each position on the wafer can be sensed and recorded, and the difference between the interaction force between the charged structure and each position on the wafer and a reference force (the difference may be positive or negative) can also be sensed and recorded. The reference acting force is, for example, an interaction force between the charged structure and a center of a circle on the wafer, or a preset interaction force between the charged structure and a surface of a standard wafer (ideally, a wafer without warpage).
The data processing module can also be used for establishing a three-dimensional mechanical model according to the sensing result, and obtaining the warping condition of the wafer at any position according to the three-dimensional mechanical model, so that the on-line measurement of the warping degree of the wafer is realized. Meanwhile, the three-dimensional mechanical model can be displayed in the display module, so that the wafer warping degree condition can be displayed in real time.
In one embodiment, the sensing results include a first sensing result for the upper surface of the wafer and a second sensing result for the lower surface of the wafer.
The data processing module calculates the warpage of the wafer according to the sensing result, for example, the warpage of the wafer is calculated according to the first sensing result for the upper surface of the wafer and/or the second sensing result for the lower surface of the wafer.
It should be understood that, in practical applications, the warp of the wafer is generally calculated according to the first sensing result; when the deformation of the wafer back needs to be measured, calculation is carried out according to the second sensing result. Considering that a film layer is deposited on the upper surface of the wafer, so as to form an uneven micro-morphology, in the embodiment of the present application, the warpage of the wafer may be determined by a method of measuring a fitting curve of the upper surface after establishing a model, or the warpage of the wafer may be determined by using a second sensing result for the topography of the lower surface of the wafer (generally, the lower surface of the wafer is relatively flat).
The data processing module is configured to establish a three-dimensional mechanical model according to the sensing result, and may specifically include: the mechanical sensing component is used for receiving a first sensing result and a second sensing result of the mechanical sensing component and establishing a three-dimensional mechanical model for the upper surface and the lower surface of the wafer according to the first sensing result and the second sensing result.
The data processing module may be configured as a computing device including a processor. The computing device may be a workstation, server, desktop, laptop, mainframe, Pad, cluster, virtual appliance, or other computing device, which may support a processor. The processor performs a process of calculating warp of the wafer.
When the warping degree of the wafer is calculated, the sensing result can be compared with a standard wafer mechanical model, and the warping degree of the measured wafer is calculated. Specifically, the data processing module is further configured to obtain a standard wafer mechanical model of the wafer, and calculate the warp of the wafer according to the established three-dimensional mechanical model and the obtained standard wafer mechanical model.
The embodiment of the invention also provides a wafer warping degree measuring method. Fig. 2 is a schematic flow chart of a wafer warp measurement method according to an embodiment of the present invention.
As shown in fig. 2, the method includes:
step 201: placing a wafer on a support member;
step 202: conducting charge to the wafer to charge the wafer;
step 203: controlling a mechanical sensing part to move along a certain track, wherein the mechanical sensing part comprises a charged structure;
step 204: sensing interaction forces at different positions on the charged structure and the wafer to obtain a sensing result;
step 205: and calculating the warping degree of the wafer according to the sensing result.
The method is further described in detail with reference to the process schematic diagrams of the wafer warp measurement method shown in fig. 3a to 3 c.
It should be understood that the wafer warp measuring method provided by the embodiment of the present invention may use the wafer warp measuring apparatus provided by the embodiment of the present invention to measure the wafer; the structures shown in fig. 3a to 3c may correspond to the corresponding structures in fig. 1a to 1 c.
First, please refer to fig. 3 a. The upper cover is opened and the wafer 90 to be tested is placed on the support member 31.
Here, the wafer 90 to be measured may be moved by a robot arm so that the wafer 90 to be measured is placed on the support member 31.
The support member 31 may include two or more support bodies, and fig. 3a and 3c show the case where the number of the support bodies is four.
Next, please refer to fig. 3 b. After the wafer 90 under test is placed stably, the upper cover 301 is closed.
The upper cover 301 and the lower cover 302 are covered, and a cavity is formed by the upper cover and the lower cover; the supporting member 11, the mechanical sensing member 12, the moving member 13, and the conductive member 14 are located inside a cavity surrounded by the upper cover 101 and the lower cover 102.
Next, please continue to refer to fig. 3 b. Conducting an electrical charge to the wafer 90 to electrically charge the wafer 90; controlling the mechanical sensing part 32 to move in a certain track, wherein the mechanical sensing part 32 comprises a charged structure; and sensing the interaction force of the charged structure and different positions on the wafer 90 to obtain a sensing result.
Here, the wafer may be charged by contacting the wafer with a conductive member.
In one embodiment, the conducting the electrical charge to the wafer includes: conducting electric charge of a first electrical property to the wafer so as to enable the wafer to be charged with the first electrical property; the charged structure has a first electrical property; the sensing interaction forces at different locations on the charged structure and the wafer includes: and sensing the magnitude of the repulsive force at different positions on the charged structure and the wafer.
In another embodiment, the conducting the electrical charge to the wafer includes: conducting electric charge of a first electrical property to the wafer so as to enable the wafer to be charged with the first electrical property; the charged structure has a second electrical property opposite to the first electrical property, and the sensing of the interaction force between the charged structure and the wafer at different positions comprises: and sensing the attractive force of the charged structure and the wafer at different positions.
Fig. 3a shows the conductive element 34 used to conduct negative charges to the wafer 90, the charged structure with a positive point, and the mechanical sensing element 32 used to sense the magnitude of the attractive force between the charged structure and the wafer 90.
In order to realize mechanical sensing at different positions on the whole surface of the wafer, the controlling the mechanical sensing component to move in a certain track may include: and controlling the mechanical sensing part to move in a direction parallel to the bearing surface of the supporting part.
And then, calculating the warping degree of the wafer according to the sensing result.
In a specific embodiment, the method may further include: and establishing a three-dimensional mechanical model according to the sensing result. The warping condition of any position of the wafer can be obtained according to the three-dimensional mechanical model, and the on-line measurement of the warping degree of the wafer is realized.
In some embodiments, the method may further comprise: and displaying the three-dimensional mechanical model. Therefore, an engineer can more intuitively know the three-dimensional structure of the wafer; and defect information of any position of the wafer can be obtained according to actual requirements.
The sensing results may include a first sensing result for an upper surface of the wafer and a second sensing result for a lower surface of the wafer. Accordingly, the warp of the wafer may be calculated from the first sensing result for the upper surface of the wafer and/or the second sensing result for the lower surface of the wafer. Accordingly, the method may comprise: and establishing a three-dimensional mechanical model aiming at the upper surface and the lower surface of the wafer according to the first sensing result and the second sensing result.
When the warping degree of the wafer is calculated, the sensing result can be compared with a standard wafer mechanical model, and the warping degree of the measured wafer is calculated. Specifically, the calculating the warpage of the wafer according to the sensing result specifically includes: and obtaining a standard wafer mechanical model of the wafer, and calculating the warping degree of the wafer according to the established three-dimensional mechanical model and the obtained standard wafer mechanical model.
Finally, please refer to fig. 3 c. The upper cover is opened and the wafer 90 is removed from the support member 31.
Here, the removal of the wafer can also be accomplished by a robotic movement.
After the wafer 90 is removed, it may be cleaned and subjected to subsequent processes.
Of course, it is only described here schematically at the end that the step of removing said wafer from the apparatus should also be included; in practical applications, the step of opening the upper cover and the step of removing the wafer may be performed simultaneously with the step of calculating the warpage of the wafer, or performed in any other order.
It should be noted that the embodiment of the wafer warpage measuring method provided by the invention and the embodiment of the wafer warpage measuring device belong to the same concept; the technical features of the technical means described in the embodiments may be arbitrarily combined without conflict.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, and any modifications, equivalents, improvements, etc. that are within the spirit and principle of the present invention should be included in the present invention.
Claims (13)
1. A wafer warpage measuring device, characterized by, includes:
the supporting component is used for bearing the wafer;
a conductive member for conducting charge to the wafer;
the mechanical sensing component comprises a charged structure, the charged structure and the supporting component are arranged at a certain distance, and the mechanical sensing component is used for sensing the interaction force between the charged structure and the wafer;
the moving component is connected with the mechanical sensing component and used for controlling the mechanical sensing component to move along a certain track so as to enable the mechanical sensing component to sense the interaction force of the charged structure and different positions on the wafer;
and the data processing module is used for receiving the sensing result of the mechanical sensing component and calculating the warping degree of the wafer according to the sensing result.
2. The wafer warp measurement apparatus of claim 1,
the data processing module is also used for establishing a three-dimensional mechanical model according to the sensing result and obtaining the warping condition of the wafer at any position according to the three-dimensional mechanical model.
3. The wafer warp measurement apparatus of claim 1,
further comprising: and the display module is used for displaying the three-dimensional mechanical model.
4. The wafer warp measurement apparatus of claim 1,
the supporting component comprises more than two supporting bodies, the supporting bodies are distributed at a circumferential position separately, and the distance from one end of each supporting body close to the circle center is smaller than or equal to the radius of the wafer.
5. The wafer warp measurement apparatus of claim 1,
the conductive part is specifically used for conducting electric charges of a first electrical property to the wafer so as to enable the wafer to be charged with the first electrical property;
the charged structure is provided with a first electrical property, and the mechanical sensing part is specifically used for sensing the magnitude of a repulsive force between the charged structure and the wafer; or, the charged structure has a second electrical property opposite to the first electrical property, and the mechanical sensing component is specifically configured to sense an attractive force between the charged structure and the wafer.
6. The wafer warpage measuring apparatus of claim 1, wherein the moving component is configured to control the mechanical sensor component to move along a certain trajectory, and comprises:
and controlling the mechanical sensing part to move in a direction parallel to the bearing surface of the supporting part.
7. The apparatus of claim 1, wherein the sensing results comprise a first sensing result for an upper surface of the wafer and a second sensing result for a lower surface of the wafer.
8. A wafer warp measurement method, comprising:
placing a wafer on a support member;
conducting charge to the wafer to charge the wafer;
controlling a mechanical sensing part to move along a certain track, wherein the mechanical sensing part comprises a charged structure;
sensing interaction forces at different positions on the charged structure and the wafer to obtain a sensing result;
and calculating the warping degree of the wafer according to the sensing result.
9. The wafer warp measurement method of claim 8,
the method further comprises the following steps: and establishing a three-dimensional mechanical model according to the sensing result.
10. The wafer warp measurement method of claim 8,
the supporting component comprises more than two supporting bodies, the supporting bodies are distributed at a circumferential position separately, and the distance from one end of each supporting body close to the circle center is smaller than or equal to the radius of the wafer.
11. The wafer warp measurement method of claim 8,
the conducting charge to the wafer includes: conducting electric charge of a first electrical property to the wafer so as to enable the wafer to be charged with the first electrical property;
the charged structure has a first electrical property; the sensing interaction forces at different locations on the charged structure and the wafer includes: sensing the magnitude of repulsive force at different positions on the charged structure and the wafer; or, the charged structure has a second electrical property opposite to the first electrical property, and the sensing the interaction force between the charged structure and the wafer at different positions includes: and sensing the attractive force of the charged structure and the wafer at different positions.
12. The wafer warpage measuring method of claim 8, wherein the controlling the mechanical sensor to move along a certain trajectory comprises:
and controlling the mechanical sensing part to move in a direction parallel to the bearing surface of the supporting part.
13. The method as claimed in claim 8, wherein the sensing results include a first sensing result for an upper surface of the wafer and a second sensing result for a lower surface of the wafer.
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