CN111326568A - 带保护环结构的氮化物器件 - Google Patents

带保护环结构的氮化物器件 Download PDF

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CN111326568A
CN111326568A CN202010160226.3A CN202010160226A CN111326568A CN 111326568 A CN111326568 A CN 111326568A CN 202010160226 A CN202010160226 A CN 202010160226A CN 111326568 A CN111326568 A CN 111326568A
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王磊
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Suzhou Grain Boundary Semiconductor Co ltd
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]

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Abstract

本发明公开了一种带保护环的氮化物器件,包括有源区和终端区的氮化物器件结构；所述氮化物器件结构包括衬底、氮化物缓冲层、外延结构、介质层、漏极、源极、栅极、保护环沟槽和保护环金属；所述氮化物缓冲层形成在所述衬底上；所述外延结构包括自下而上依次设置在所述氮化物缓冲层上的氮化物沟道层、氮化物插入层和氮化物势垒层。本发明由于在有源区和终端区之间设置保护环沟槽结构，使得有源区和终端区的外延结构电气隔离，同时保护环金属和源极电气连接，可以有效提升器件的静电防护能力和可靠性。

Description

带保护环结构的氮化物器件
技术领域
本发明属于氮化物半导体器件技术领域，具体涉及一种带保护环的氮化物器件。
背景技术
静电在人们日常生活中无处不在，当带有静电的物体碰触到半导体器件后，就会对器件产生静电放电，从而形成瞬时大电流造成器件损伤甚至失效。因此，静电防护作为半导体器件设计中的重要环节。
目前，常规的氮化物器件为平面横向结构，其栅极和源极之间极易受到静电冲击而引起静电击穿。常规的氮化物器件静电防护主要依靠器件栅极结构和漏极结构设计保证瞬时脉冲大电流相对地均匀横向分布，不至于聚集在栅极边缘导致器件受到损伤。但是，较强的静电放电产生的大电流，会使得栅极边缘处出现瞬时电流聚集，导致此处发生雪崩击穿，造成氮化物器件的失效。
发明内容
本发明的主要目的在于针对上述现有技术存在的问题，提出一种带保护环的氮化物器件，可以有效提升器件的静电防护能力和可靠性。
本发明的一种实施方案是：提供一种带保护环的氮化物器件，包括有源区和终端区的氮化物器件结构；所述氮化物器件结构包括衬底、氮化物缓冲层、外延结构、介质层、漏极、源极、栅极、保护环沟槽和保护环金属；所述氮化物缓冲层形成在所述衬底上；所述外延结构包括自下而上依次设置在所述氮化物缓冲层上的氮化物沟道层、氮化物插入层和氮化物势垒层；所述介质层形成在所述外延结构上；所述源极形成在所述氮化物势垒层上，且所述源极的底端至少部分嵌入所述氮化物势垒层内部；所述漏极形成在所述氮化物势垒层上，且所述漏极的底端至少部分嵌入所述氮化物势垒层内部；所述栅极形成在所述介质层上，且位于所述漏极和所述源极之间；所述保护环沟槽被设置成完全围绕所述有源区的所述终端区中，且所述保护环沟槽贯穿位于所述氮化物缓冲层上的所述外延结构设置于所述氮化物缓冲层中；所述保护环金属形成在所述终端区中的所述保护环沟槽中，且所述保护环金属和所述源极电气连接。
进一步，所述终端区围绕所述有源区，且所述终端区采用刻蚀或局部离子注入工艺使得所述保护环沟槽和所述有源区电气隔离。
本发明的另一种实施方案是：提供一种带保护环的氮化物器件，包括有源区和终端区的氮化物器件结构；所述氮化物器件结构包括衬底、氮化物缓冲层、外延结构、介质层、漏极、源极、栅极、保护环沟槽和保护环金属；所述氮化物缓冲层形成在所述衬底上；所述外延结构包括自下而上依次设置在所述氮化物缓冲层上的氮化物沟道层、氮化物插入层、氮化物势垒层和p型氮化物层；所述介质层形成在所述外延结构上；所述源极形成在所述氮化物势垒层上，且所述源极的底端至少部分嵌入所述氮化物势垒层内部；所述漏极形成在所述氮化物势垒层上，且所述漏极的底端至少部分嵌入所述氮化物势垒层内部；所述栅极形成在所述p型氮化物层上；所述保护环沟槽被设置成完全围绕所述有源区的所述终端区中，且所述保护环沟槽贯穿位于所述氮化物缓冲层上的所述外延结构设置于所述氮化物缓冲层中；所述保护环金属形成在所述终端区中的所述保护环沟槽中，且所述保护环金属和所述源极电气连接。
进一步，所述终端区围绕所述有源区，且所述终端区采用刻蚀或局部离子注入工艺使得所述保护环沟槽和所述有源区电气隔离。
区别现有技术的情况，本发明通过在有源区和终端区之间设置保护环沟槽结构，且终端区采用刻蚀或局部离子注入工艺使得保护环沟槽和有源区电气隔离，另外，终端区的保护环金属和有源区的源极电气连接，从而使得衬底、保护环金属和源极之间形成电气连接，达到栅极和源极之间瞬时大电流面积较大的泄放通道，可以有效提升器件的静电防护能力和可靠性。
附图说明
图1是现有氮化物器件的结构示意图。
图2是根据本发明的一种实施方案的带保护环的氮化物器件结构示意图。
图3是根据图2中的氮化物器件结构示意图对应的版图简化图。
图4是根据图2中的氮化物器件结构示意图对应的另一种版图简化图。
图5是根据本发明的另一种实施方案的带保护环的氮化物器件结构图。
具体实施方式
下面结合附图和具体实施例，详细说明本发明的技术方案。
本发明提供的一种实施方案的带保护环的氮化物器件结构示意图，如图2所示，包括有源区13和终端区14的氮化物器件结构；氮化物器件结构包括衬底1、氮化物缓冲层2、外延结构、介质层6、漏极7、源极8、栅极9、保护环沟槽10和保护环金属11；氮化物缓冲层2形成在衬底1上；外延结构包括自下而上依次设置在氮化物缓冲层2上的氮化物沟道层 3、氮化物插入层4和氮化物势垒层5；介质层6形成在外延结构上；源极8形成在氮化物势垒层5上，且源极8的底端至少部分嵌入氮化物势垒层5内部；漏极7形成在氮化物势垒层 5上，且漏极7的底端至少部分嵌入氮化物势垒层5内部；栅极9形成在介质层6上，且位于漏极7和源极8之间；保护环沟槽10被设置成完全围绕有源区13的终端区14中，且保护环沟槽10贯穿位于氮化物缓冲层2上的外延结构设置于氮化物缓冲层2中；保护环金属11 形成在终端区14中的保护环沟槽10中，且保护环金属11和源极8电气连接。
终端区14围绕有源区13，且终端区14采用刻蚀或局部离子注入工艺使得保护环沟槽10和有源区13电气隔离。
氮化物插入层4与氮化物势垒层5会形成异质结，在该异质结的界面产生二维电子气 (two dimension electron gas,简称为2DEG)，2DEG具有良好的导电能力，如图2中虚线所示。
本发明提供的另一种实施方案的带保护环的氮化物器件结构示意图，如图5所示，包括有源区13和终端区14的氮化物器件结构；氮化物器件结构包括衬底1、氮化物缓冲层2、外延结构、介质层6、漏极7、源极8、栅极9、保护环沟槽10和保护环金属11；氮化物缓冲层2形成在衬底1上；外延结构包括自下而上依次设置在氮化物缓冲层2上的氮化物沟道层3、氮化物插入层4、氮化物势垒层5和p型氮化物层12；介质层6形成在外延结构上；源极8形成在氮化物势垒层5上，且源极8的底端至少部分嵌入氮化物势垒层5内部；漏极 7形成在氮化物势垒层5上，且漏极7的底端至少部分嵌入氮化物势垒层5内部；栅极9形成在p型氮化物层12上；保护环沟槽10被设置成完全围绕有源区13的终端区14中，且保护环沟槽10贯穿位于氮化物缓冲层2上的外延结构设置于氮化物缓冲层2中；保护环金属 11形成在终端区14中的保护环沟槽10中，且保护环金属11和源极8电气连接。
终端区14围绕有源区13，且终端区14采用刻蚀或局部离子注入工艺使得保护环沟槽10和有源区13电气隔离。
氮化物插入层4与氮化物势垒层5会形成异质结，在该异质结的界面产生二维电子气 (two dimension electron gas,简称为2DEG)，2DEG具有良好的导电能力，如图5中虚线所示。
本发明实施例的带保护环的氮化物器件通过在有源区和终端区之间设置保护环沟槽结构，且终端区采用刻蚀或局部离子注入工艺使得保护环沟槽和有源区电气隔离，另外，终端区的保护环金属和有源区的源极电气连接，从而使得衬底、保护环金属和源极之间形成电气连接，达到栅极和源极之间瞬时大电流面积较大的泄放通道，可以有效提升器件的静电防护能力和可靠性。
以上所述的实施方案仅表达本发明的几种优选实施方案，并非用以限定本发明。凡是基于本发明中的实施方案和发明思想进行的各种变化形式，均在本发明的保护范围之内。

Claims (4)

1.一种带保护环的氮化物器件，其特征在于，包括有源区和终端区的氮化物器件结构；
所述氮化物器件结构包括衬底、氮化物缓冲层、外延结构、介质层、漏极、源极、栅极、保护环沟槽和保护环金属；
所述氮化物缓冲层形成在所述衬底上；
所述外延结构包括自下而上依次设置在所述氮化物缓冲层上的氮化物沟道层、氮化物插入层和氮化物势垒层；
所述介质层形成在所述外延结构上；
所述源极形成在所述氮化物势垒层上，且所述源极的底端至少部分嵌入所述氮化物势垒层内部；
所述漏极形成在所述氮化物势垒层上，且所述漏极的底端至少部分嵌入所述氮化物势垒层内部；
所述栅极形成在所述介质层上，且位于所述漏极和所述源极之间；
所述保护环沟槽被设置成完全围绕所述有源区的所述终端区中，且所述保护环沟槽贯穿位于所述氮化物缓冲层上的所述外延结构设置于所述氮化物缓冲层中；
所述保护环金属形成在所述终端区中的所述保护环沟槽中，且所述保护环金属和所述源极电气连接。
2.根据权利要求1所述的一种带保护环的氮化物器件，其特征在于，所述终端区围绕所述有源区，且所述终端区采用刻蚀或局部离子注入工艺使得所述保护环沟槽和所述有源区电气隔离。
3.一种带保护环的氮化物器件，其特征在于，包括有源区和终端区的氮化物器件结构；
所述氮化物器件结构包括衬底、氮化物缓冲层、外延结构、介质层、漏极、源极、栅极、保护环沟槽和保护环金属；
所述氮化物缓冲层形成在所述衬底上；
所述外延结构包括自下而上依次设置在所述氮化物缓冲层上的氮化物沟道层、氮化物插入层、氮化物势垒层和p型氮化物层；
所述介质层形成在所述外延结构上；
所述源极形成在所述氮化物势垒层上，且所述源极的底端至少部分嵌入所述氮化物势垒层内部；
所述漏极形成在所述氮化物势垒层上，且所述漏极的底端至少部分嵌入所述氮化物势垒层内部；
所述栅极形成在所述p型氮化物层上；
所述保护环沟槽被设置成完全围绕所述有源区的所述终端区中，且所述保护环沟槽贯穿位于所述氮化物缓冲层上的所述外延结构设置于所述氮化物缓冲层中；
所述保护环金属形成在所述终端区中的所述保护环沟槽中，且所述保护环金属和所述源极电气连接。
4.根据权利要求3所述的一种带保护环的氮化物器件，其特征在于，所述终端区围绕所述有源区，且所述终端区采用刻蚀或局部离子注入工艺使得所述保护环沟槽和所述有源区电气隔离。
CN202010160226.3A 2020-03-10 2020-03-10 带保护环结构的氮化物器件 Pending CN111326568A (zh)

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CN104681542A (zh) * 2013-11-29 2015-06-03 联华电子股份有限公司 半导体静电放电保护装置
CN105355626A (zh) * 2015-10-09 2016-02-24 上海华虹宏力半导体制造有限公司 沟槽型mosfet的esd结构及工艺方法

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US20110221002A1 (en) * 2009-12-17 2011-09-15 Shanghai Institute Of Microsystem And Information Technology, Chinese Academy Mos-type esd protection device in soi and manufacturing method thereof
CN104681542A (zh) * 2013-11-29 2015-06-03 联华电子股份有限公司 半导体静电放电保护装置
CN104051522A (zh) * 2014-07-02 2014-09-17 苏州晶湛半导体有限公司 一种增强型氮化物半导体器件及其制造方法
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