CN111326464A - Method for stripping micro device by laser - Google Patents
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- CN111326464A CN111326464A CN201811535381.8A CN201811535381A CN111326464A CN 111326464 A CN111326464 A CN 111326464A CN 201811535381 A CN201811535381 A CN 201811535381A CN 111326464 A CN111326464 A CN 111326464A
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 112
- 230000001678 irradiating effect Effects 0.000 claims abstract 2
- 239000004065 semiconductor Substances 0.000 claims description 52
- 229910052594 sapphire Inorganic materials 0.000 claims description 17
- 239000010980 sapphire Substances 0.000 claims description 17
- 230000000903 blocking effect Effects 0.000 claims description 7
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 20
- 230000008569 process Effects 0.000 abstract description 12
- 238000009826 distribution Methods 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- Microelectronics & Electronic Packaging (AREA)
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- Laser Beam Processing (AREA)
Abstract
The invention provides a method for stripping a micro device by using laser. The method comprises the following steps: arranging a shielding structure on a first surface of a first substrate, wherein a plurality of micro devices are connected to a second surface of the first substrate, the first surface and the second surface are parallel to each other, the plurality of micro devices form a plurality of connection surfaces on the second surface, the shielding structure is provided with at least one opening, and only one connection surface is accommodated in a position corresponding to at least one opening in the opening; the laser is used for irradiating the opening, and then the connecting surface in the opening is irradiated, so that the micro device is separated from the first substrate, the irradiation range of the laser is limited by the opening, and then the range of impact generated by the laser is controlled, so that the influence of the peeling process on other micro devices is reduced, and the micro device can be peeled off more conveniently and selectively by arranging the opening, so that the control structure of the laser is simplified, and the production cost is reduced.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a method for stripping a micro device by using laser.
Background
In recent years, the use of lasers to lift-off micro devices on substrates has become a more mature industrial technology. However, when the size of the micro device reaches the order of the micrometer, the conventional method for peeling shows some disadvantages, for example, if the laser with a small spot size is used for peeling, the peeling speed is greatly increased, and the production efficiency is reduced. If the laser with a large spot size is used for the lift-off, micro devices which are not required to be lifted off may be contained in the same spot, and the micro devices may be damaged.
Therefore, a method capable of efficiently and accurately performing laser lift-off on a micro device is desired.
Disclosure of Invention
In view of this, the present invention provides a method for stripping a micro device by using laser, which can reduce the influence of the stripping process on other micro devices, thereby efficiently and accurately performing laser stripping on the micro device.
One aspect of the present invention provides a method of lift-off of a micro device using a laser, comprising: arranging a shielding structure on a first surface of a first substrate, wherein the second surface of the first substrate is provided with M micro devices, the shielding structure comprises N openings, M and N are integers, and M is larger than or equal to N; arranging N connecting devices between the first surface of the second substrate and the second surface of the first substrate, and correspondingly connecting the N micro devices with the N connecting devices, wherein the N connecting devices are fixed on the second substrate; the N openings are irradiated with laser light to separate the N micro devices from the first substrate.
In the present invention, the spot size of the laser is larger than the size of the aperture.
In one embodiment of the invention, the shielding structure comprises a mask.
In one embodiment of the invention, the shape of the N openings is adapted to the shape of the projection of the N micro devices on the first substrate, respectively.
In an embodiment of the invention, the positions of the N openings are regularly distributed on the shielding structure, so that the interface between the N micro devices and the second surface of the first substrate can receive the irradiation of the laser.
In an embodiment of the present invention, the distribution of the positions of the N openings on the shielding structure according to a certain rule includes:
in the N micro devices corresponding to the positions of the N openings, N micro devices are included between two adjacent micro devices, wherein N is a non-negative integer.
In one embodiment of the invention, the method further comprises:
after the N openings are irradiated by the laser to separate the N micro devices from the first substrate, the steps are executed iteratively until the number of the micro devices remaining on the first substrate is less than N, wherein the distance between the adjacent openings is kept unchanged.
In one embodiment of the present invention, the distance between adjacent openings of the N openings is calculated by the following formula:
d＝n*(a+b)+b；
wherein d is the distance between two adjacent openings;
a-the size of the connection face between the micro device and the first substrate;
b-the distance between two adjacent micro devices;
n is a natural number;
further comprising:
if M > -2 x N, after the N micro devices are separated from the first substrate, setting M to M-N and iteratively performing the above steps for new N micro devices to separate new N micro devices from the first substrate until the M micro devices are separated from the substrate, wherein the distance between adjacent openings remains unchanged.
In one embodiment of the present invention, further comprising: disposing M micro devices on a first substrate, wherein N connection devices are disposed between a first surface of a second substrate and a first surface of the first substrate, and the N micro devices are correspondingly connected to the N connection devices, comprising: providing N connecting devices on the first surface of the second substrate, the N connecting devices corresponding to N micro devices of the M micro devices; and correspondingly connecting the N micro devices with the N connecting devices.
In one embodiment of the present invention, each of the M micro devices includes an electrode and a semiconductor device, the disposing the M micro devices on the first substrate includes: m semiconductor devices are provided on a first substrate, and M electrodes are provided on the M semiconductor devices, respectively.
In one embodiment of the present invention, the micro device comprises a semiconductor micro device, the semiconductor comprising a gallium nitride semiconductor, the first substrate comprising a sapphire substrate; the laser is deep ultraviolet laser.
In one embodiment of the invention, the semiconductor micro-device comprises a micro LED display device.
According to the technical scheme provided by the embodiment of the invention, the shielding structure with the opening is arranged on the substrate, so that the irradiation range of the laser is limited, and the impact range of the laser is further controlled, thereby reducing the influence of the stripping process on other micro devices, and the micro devices can be more conveniently and selectively stripped through the opening, so that the control structure of the laser is simplified, and the production cost is reduced.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
FIG. 1 is a flow chart of a method for lift-off of a micro device using a laser in accordance with the present invention.
Fig. 2 is a schematic diagram of a lift-off process for a method of lifting off a micro device using a laser in accordance with the present invention.
Fig. 3 is a flow chart of a method for lift-off of a micro device using a laser in accordance with the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
FIG. 1 is a flow chart of a method for lift-off of a micro device using a laser in accordance with the present invention. As shown in fig. 1, the method includes:
110: a shielding structure is arranged on the first surface of the first substrate, wherein M micro devices are arranged on the second surface of the first substrate, the shielding structure comprises N openings, M and N are integers, and M is larger than or equal to N.
In an embodiment of the invention, the micro device is fabricated on the second surface of the first substrate. And etching and processing the semiconductor layer on the second surface to manufacture M micro devices with certain functions and structures. Each micro device is connected to the second surface to form a connection surface. Since the micro devices have different structures and functions, each micro device and the second surface may form one or more contact surfaces, and the contact surfaces have different shapes and areas, which is not limited in the embodiments of the present invention.
In the embodiment of the present invention, the blocking structure is a structure capable of blocking laser light, for example, in the embodiment of the present invention, a mask capable of blocking laser light is used as the blocking structure. In another embodiment of the present invention, the shielding structure is a metal plate capable of blocking laser light, which is not limited in the embodiment of the present invention.
In the embodiment of the invention, the shielding structure is a mask and is arranged on the first surface of the first substrate in a film coating mode, wherein the first surface is opposite to the second surface. In another embodiment of the present invention, the shielding structure is a metal plate, the metal plate is fixed on a lifting mechanism, and the metal plate is attached to the first surface of the first substrate by the lifting mechanism. The embodiment of the present invention does not limit the setting manner of the shielding structure.
In the embodiment of the invention, the shielding structure is provided with N openings, N connecting surfaces of the micro device and the second surface are completely exposed in the openings, and M is larger than or equal to N. By preselecting the microdevice to be stripped, it is possible to determine which connection surfaces need to be exposed in the opening and thus the position of the opening. At least one of the N openings can accommodate only one connection face. By controlling the area and shape of the openings, the number of connection surfaces that can be accommodated in the openings can be controlled, i.e. the number of connection surfaces exposed in the same opening. The area and shape of the opening may be determined by the area and shape of the connecting surface, for example, in the embodiment of the present invention, the shape and area of one opening are the same as those of the connecting surface exposed in the opening, so that only one connecting surface can be accommodated in the opening. In another embodiment of the present invention, the connection surfaces formed by the micro devices to be peeled off are rectangular, the connection surfaces have a large distance therebetween, the opening is circular, and the circle is a circumscribed circle of the connection surfaces, so that only one connection surface can be accommodated in the opening.
120: and arranging N connecting devices between the first surface of the second substrate and the second surface of the first substrate, and correspondingly connecting the N micro devices and the N connecting devices, wherein the N connecting devices are fixed on the first surface of the second substrate.
In an embodiment of the invention, the connecting device is such that the micro device forms a fixed connection with the first surface of the second substrate. The connecting device may be a solder or a glue, which is not limited in the embodiment of the present invention. Through the arrangement of the connecting device, the micro device is fixedly connected with the first surface of the second substrate, and further when the micro device is stripped from the second surface of the first substrate, the micro device is not scattered, and further processing or transferring is facilitated.
130: the N openings are irradiated with laser light to separate the N micro devices from the first substrate.
In the embodiment of the invention, the laser irradiates the connecting surface to generate impact, so that the micro device is separated from the second surface, and the micro device is separated from the first substrate. Because when the connecting surface is irradiated by laser, the irradiation range of the laser is limited by the opening, and the range of the laser impact is controlled, so that the influence of the stripping process on other micro devices is reduced, and the micro devices can be stripped more conveniently and selectively by arranging the opening, the control structure of the laser is simplified, and the production cost is reduced.
According to the embodiment of the present invention, the shielding structure includes a mask.
The mask has the advantages of simple structure, precise size, capability of more accurately controlling the irradiation range of the laser and reduction of the generation cost.
According to the above embodiment of the present invention, the above micro device comprises a semiconductor micro device, the semiconductor comprising a gallium nitride semiconductor, the first substrate comprising a sapphire support plate; the laser is deep ultraviolet laser.
According to the technical scheme provided by the embodiment of the invention, in the process of manufacturing the semiconductor micro device by using the materials and the technology, the influence of the stripping process on other micro devices can be reduced, the control structure of laser is simplified, and the production cost is reduced.
According to the above embodiments of the present invention, the semiconductor micro device includes a micro LED display device.
According to the technical scheme provided by the embodiment of the invention, in the manufacturing process of the device of the micro LED display panel, the influence of the stripping process on other micro devices can be reduced, the control structure of laser is simplified, and the production cost is reduced.
In one embodiment of the invention, the spot size of the laser is larger than the size of the opening.
In the embodiment of the invention, the opening is rectangular, the light spot is circular, and the circle corresponding to the light spot is a circumscribed circle of the rectangle corresponding to the opening. In another embodiment of the present invention, the openings are circular with a diameter of 10 μm and are spaced 10 μm apart. The shape of the light spot is rectangular, and the side length of the rectangle is 5mm, and the embodiment of the invention does not limit the specific shape and size of the light spot.
Through using the laser that the facula size is greater than the opening size for peel off the process faster, promoted production efficiency, and, the inside energy distribution of facula is more even, is favorable to promoting semiconductor device's the success rate of peeling off.
In one embodiment of the invention, the shape of the N openings is adapted to the shape of the projection of the N micro devices on the first substrate, respectively.
In the embodiment of the invention, the N openings which are adaptive to the shapes of the corresponding connecting surfaces are arranged on the shielding structure, so that the N micro devices corresponding to the irradiation of the laser are accurately controlled, and the damage of the laser to the substrate or the micro devices in the stripping process is reduced.
In an embodiment of the invention, the positions of the N openings are regularly distributed on the shielding structure, so that the interface between the N micro devices and the second surface of the first substrate can receive the irradiation of the laser.
The distribution of the positions of the openings can be determined according to which micro devices need to be stripped in a specific production process. For example, in the embodiment of the present invention, the micro devices on the substrate are arranged in a rectangular array, and the micro devices located at the outermost periphery of the rectangular array are peeled off according to production requirements, so that the position distribution rule of the openings is the same as that of the micro devices located at the outermost periphery of the array. In another embodiment of the present invention, the micro devices on the substrate are arranged in a rectangular array, and the micro devices on the substrate are peeled off at intervals according to production requirements, and the distribution rule of the positions of the openings is the same as the distribution rule of the positions of the micro devices to be peeled off.
The positions of the openings are regularly arranged, so that the laser can selectively strip the micro device.
In one embodiment of the present invention, the regular distribution of the positions of the openings on the shielding structure comprises: the distance between adjacent openings of the N openings is calculated by the following formula:
d＝n*(a+b)+b；
wherein d is the distance between two adjacent openings;
a-the size of the connection face between the micro device and the first substrate;
b-the distance between two adjacent micro devices;
n is a natural number;
further comprising:
if M > -2 x N, after the N micro devices are separated from the first substrate, setting M to M-N and iteratively performing the above steps for new N micro devices to separate new N micro devices from the first substrate until the M micro devices are separated from the substrate, wherein the distance between adjacent openings remains unchanged.
In the embodiment of the invention, M micro devices are arranged on the substrate in a rectangular array, and the interval between each micro device and the adjacent micro device is the same. According to the production requirement, the micro-devices are stripped at intervals, namely N micro-devices in M micro-devices are stripped, wherein N is M/2. Therefore, the interval between the adjacent two openings is calculated by the following formula:
d＝1*(a+b)+b；
wherein d is the distance between two adjacent openings;
a-the size of the connection face between the micro device and the first substrate;
b-the distance between two adjacent micro devices.
According to the above embodiment, in another embodiment of the present invention, n is 3 according to production requirements, which is not limited in the embodiment of the present invention.
In another embodiment of the present invention, M micro devices are arranged in a line on a substrate, where M is 90, the interval between each micro device is 5 μ M, the connection surface between the micro device and the first substrate is a circular shape with a diameter of 10 μ M, and one micro device is peeled off every two micro devices according to production needs, so N is M/3 is 30, and the interval between two adjacent openings is calculated by the following formula:
d＝2*(a+b)+b；
wherein d is the distance between two adjacent openings;
a-the size of the connection surface between the micro device and the first substrate, i.e. 10 μm;
b-the distance between two adjacent micro devices, i.e., 5 μm.
As can be seen by calculation, in this case, the distance d between two adjacent openings is 35 μm.
After the 30 micro devices are peeled off from the substrate, the peeling process is repeated for the remaining M-N60 micro devices while keeping the distance d between two adjacent openings constant at 35 μ M until all the micro devices are peeled off from the first substrate.
After the interval between two adjacent groups of openings is integral multiple of the interval between two adjacent micro devices, the micro devices on the substrate can be selectively stripped according to production requirements.
In one embodiment of the present invention, further comprising: disposing M micro devices on a first substrate, wherein N connection devices are disposed between a first surface of a second substrate and a first surface of the first substrate, and the N micro devices are correspondingly connected to the N connection devices, comprising: providing N connecting devices on the first surface of the second substrate, the N connecting devices corresponding to N micro devices of the M micro devices; and correspondingly connecting the N micro devices with the N connecting devices.
In an embodiment of the invention, the second support plate is a metal plate for temporarily fixing the micro device to be peeled off so as to transfer the micro device through the second support plate. In another embodiment of the present invention, the second supporting board is a circuit board with circuits and other electronic devices, and the peeled micro device is directly fixed at a desired position in the circuits, which is not limited in the embodiments of the present invention.
In the embodiment of the invention, the micro device is fixed on the second support plate through welding, wherein the second support plate is provided with the solder in advance, and after the solder is contacted with the micro device, the second support plate is heated, so that the solder is melted, and the micro device and the second support plate are welded.
Through the arrangement of the connecting device, the micro device is fixedly connected with the first surface of the second substrate, and further when the micro device is stripped from the second surface of the first substrate, the micro device is not scattered, and further processing or transferring is facilitated.
In one embodiment of the present invention, each of the M micro devices includes an electrode and a semiconductor device, the disposing the M micro devices on the first substrate includes: m semiconductor devices are provided on a first substrate, and M electrodes are provided on the M semiconductor devices, respectively.
In general, an electrode is one of the important components of a micro device, and current flows into or out of the micro device through the electrode, and then flows into or out of the semiconductor device, thereby realizing the function of the micro device.
By arranging the electrodes on the semiconductor device, the manufacturing processes of the micro device are optimized and combined, and the production efficiency is improved.
Fig. 2 is a schematic diagram of a lift-off process for a method of lifting off a micro device using a laser in accordance with the present invention. As shown in fig. 2, the diagram includes: a mask 210, an opening 220, a first substrate 230, a second substrate 270, a connecting device 260, an electrode 250, and a semiconductor device 240. The micro device in the above embodiment includes an electrode 250 and a semiconductor device 240.
The straight lines with arrows in the figure represent the light of the laser light, which is irradiated on the connection surface between the semiconductor device 240 and the first substrate 230 through the opening 220, and the light which is not irradiated on the opening is blocked by the mask 210. In the embodiment of the invention, the micro devices need to be stripped at intervals, so that one micro device cannot be irradiated by laser because the mask blocks the laser between two micro devices irradiated by the laser. After the micro device is detached by irradiation with the laser beam, since the electrode 250 in the micro device is fixed to the second substrate 270 through the connecting device 260, the detached micro device can be transferred by moving the second substrate 270.
Fig. 3 is a flow chart of a method for lift-off of a micro device using a laser in accordance with the present invention. As shown in fig. 3, the method includes:
310: and arranging a shielding structure on the lower surface of the first substrate.
In the embodiment of the invention, the shielding structure is a mask, the first substrate is a sapphire substrate, the first surface is the upper surface of the sapphire substrate, the second surface is the lower surface of the sapphire substrate, the micro device is a gallium nitride semiconductor device, the semiconductor device is positioned on the upper surface of the sapphire substrate, and the semiconductor device is in contact with the upper surface of the sapphire substrate to form the connecting surface. The mask is manufactured on the lower surface of the sapphire substrate in a photoetching mode, the position of each opening on the mask corresponds to a contact surface of a semiconductor device to be stripped and the sapphire substrate, and the shape and the area of each opening are the same as those of the corresponding contact surface. In the embodiment of the invention, the mask is made of metal chromium, so that the mask can block the light of laser.
320: the micro device to be stripped is attached to a second substrate.
In the embodiment of the invention, the second substrate is a display back plate containing a circuit, and the semiconductor device needing to be selectively stripped from the sapphire substrate is connected with the second substrate. In the embodiment of the invention, the semiconductor devices on the sapphire substrate are arranged in an array shape, the interval between every two semiconductor devices is 5 micrometers, and each semiconductor device is in a cube with the side length of 10 micrometers. An array of semiconductor devices with 20 μm intervals is required to be arranged on the display back plate, and according to the arrangement of the semiconductor devices on the sapphire substrate, half of the semiconductor devices on the sapphire substrate are required to be connected to the display back plate, and the connected semiconductor devices and the unconnected semiconductor devices are in an alternate arrangement relationship. In the embodiment of the invention, the connection between the semiconductor device and the display back plate is realized by arranging the connecting layer on the display back plate. The connecting layer is made of a solder, and after the solder of the connecting layer is contacted with the corresponding semiconductor device, the solder is heated, so that the semiconductor device is welded with the display back plate.
330: the openings in the mask are irradiated with laser light to lift off the micro devices from the upper surface of the first substrate.
In the embodiment of the invention, the laser with the rectangular light spot shape and the rectangular side length of 5mm is used for stripping the semiconductor device. Although the area of the light spot of the laser is much larger than the area of the connecting surface between the semiconductor device and the sapphire substrate, and a plurality of semiconductor devices can be contained in the irradiation area of the light spot, the mask can block the light of the laser, so that the semiconductor devices which are at the same position as the opening on the mask can receive the irradiation of the laser and are further separated from the sapphire substrate.
340: the first substrate is separated from the second substrate.
In the embodiment of the present invention, after all the semiconductor devices connected to the display backplane are separated, the display backplane and the sapphire substrate are separated, and then the mask is washed away, and the steps 220 and 230 are repeated to move the remaining semiconductor devices to another display backplane.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A method of using a laser to lift off a micro device, comprising:
arranging a shielding structure on a first surface of a first substrate, wherein M micro devices are arranged on a second surface of the first substrate, the shielding structure comprises N openings, M and N are integers, and M is larger than or equal to N;
arranging N connecting devices between a second substrate and the second surface of the first substrate, and correspondingly connecting the N micro devices with the N connecting devices, wherein the N connecting devices are fixed on the second substrate;
irradiating the N openings with laser light to separate the N micro devices from the first substrate.
2. The method of claim 1, wherein the laser has a spot size larger than a size of the opening.
3. The method of claim 1, wherein the blocking structure comprises a mask.
4. The method of claim 1, wherein the shape of the N openings is adapted to the shape of the projection of the N micro devices onto the first substrate, respectively.
5. The method of claim 1, wherein the N openings are regularly positioned on the blocking structure such that an interface between the N micro devices and the second surface of the first substrate is exposed to the laser light.
6. The method of claim 5, wherein the regularly distributed positions of the N openings on the shielding structure comprises:
in the N micro devices corresponding to the positions of the N openings, N micro devices are included between two adjacent micro devices, wherein N is a non-negative integer;
the method further comprises the following steps:
after the N openings are irradiated by the laser to separate the N micro devices from the first substrate, the steps are executed iteratively until the number of the micro devices remaining on the first substrate is less than N, wherein the distance between the adjacent openings is kept unchanged.
7. The method of any of claims 1 to 6, further comprising:
disposing the M micro devices on the first substrate,
wherein the disposing N connecting devices between the second substrate and the first surface of the first substrate and correspondingly connecting the N micro devices with the N connecting devices comprises:
providing N connecting devices on a second substrate, the N connecting devices corresponding to N micro devices of the M micro devices;
and correspondingly connecting the N micro devices with the N connecting devices.
8. The method of claim 7, wherein each of the M micro-devices comprises an electrode and a semiconductor device, the disposing the M micro-devices on a first substrate comprising: m semiconductor devices are provided on the first substrate, and M electrodes are provided on the M semiconductor devices, respectively.
9. The method of claim 8, wherein the micro device comprises a semiconductor micro device, the semiconductor comprising a gallium nitride semiconductor, the first substrate comprising a sapphire substrate; the laser is deep ultraviolet laser.
10. The method of claim 9, wherein the semiconductor micro-device comprises a micro LED display device.
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| US20180006083A1 (en) * | 2016-06-29 | 2018-01-04 | Applied Materials, Inc. | Systems and methods for transfer of micro-devices |
| CN108538878A (en) * | 2018-07-11 | 2018-09-14 | 大连德豪光电科技有限公司 | Micro- light emitting diode base plate and preparation method thereof, display device |
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| US20180006083A1 (en) * | 2016-06-29 | 2018-01-04 | Applied Materials, Inc. | Systems and methods for transfer of micro-devices |
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