CN111326433A - Semiconductor detection device and detection method - Google Patents
Semiconductor detection device and detection method Download PDFInfo
- Publication number
- CN111326433A CN111326433A CN201811544127.4A CN201811544127A CN111326433A CN 111326433 A CN111326433 A CN 111326433A CN 201811544127 A CN201811544127 A CN 201811544127A CN 111326433 A CN111326433 A CN 111326433A
- Authority
- CN
- China
- Prior art keywords
- wafer
- incident light
- optical signal
- detected
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 109
- 238000001514 detection method Methods 0.000 title claims abstract description 53
- 230000003287 optical effect Effects 0.000 claims abstract description 134
- 230000007547 defect Effects 0.000 claims abstract description 121
- 238000000034 method Methods 0.000 claims abstract description 44
- 238000007689 inspection Methods 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims description 54
- 230000008569 process Effects 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 28
- 239000013078 crystal Substances 0.000 claims description 24
- 238000003384 imaging method Methods 0.000 claims description 15
- 238000009826 distribution Methods 0.000 claims description 14
- 230000010287 polarization Effects 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 12
- 230000004044 response Effects 0.000 claims description 12
- 238000012360 testing method Methods 0.000 claims description 9
- 230000007704 transition Effects 0.000 claims description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000012806 monitoring device Methods 0.000 claims description 4
- 238000012544 monitoring process Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 239000003989 dielectric material Substances 0.000 description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 230000001066 destructive effect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000011165 process development Methods 0.000 description 2
- 238000011897 real-time detection Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
Abstract
A semiconductor inspection apparatus and an inspection method. The semiconductor detection device comprises: the wafer bearing device is used for bearing the wafer to be detected; the incident light system is used for emitting first incident light to the wafer to be detected, and the first incident light is reflected by the wafer to be detected to form first reflected light; an optical signal sorting system for sorting out nonlinear optical signals from the first reflected light; and the control system is used for acquiring first defect information of the wafer to be detected according to the nonlinear optical signal. The semiconductor detection device can realize nondestructive atomic defect detection in the manufacturing process.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor detection device and a detection method.
Background
In a semiconductor process, the yield of the device is easily reduced due to defects in the process or material, and the production cost is increased. The conventional yield detection methods are classified into electrical detection and on-line measurement.
Among other things, electrical inspection can be used to discover defects that affect the electrical performance of the device. However, the conventional electrical inspection can only be applied to Back End Of Line (BEOL) or package test, and cannot find and solve problems in real time during the manufacturing process. That is, the period from the occurrence of the problem to the detection of the electrical detection is too long, which easily causes the waste of the invalid process, and the detection speed is slow, so that the batch detection cannot be realized.
Although another conventional on-line measurement method can realize real-time measurement in the manufacturing process, such as scanning electron microscope measurement, optical bright field measurement, etc., the measurement type is limited. In particular, on-line metrology is generally applicable to macroscopic physical defects, such as particles (particles) and pattern defects (pattern defects), and once the inspection requirements enter into atomic-scale defects, the on-line metrology cannot meet the inspection requirements.
In summary, real-time detection of atomic defects caused by new materials and processes in advanced process development and production is one of the problems to be solved in the field of semiconductor yield detection.
Disclosure of Invention
The invention provides a semiconductor detection device and a detection method, which are used for realizing nondestructive atomic defect detection in a manufacturing process.
To solve the above problems, the present invention provides a semiconductor inspection apparatus, comprising: the wafer bearing device is used for bearing the wafer to be detected; the incident light system is used for emitting first incident light to the wafer to be detected, and the first incident light is reflected by the wafer to be detected to form first reflected light; an optical signal sorting system for sorting out nonlinear optical signals from the first reflected light; and the control system is used for acquiring first defect information of the wafer to be detected according to the nonlinear optical signal.
Optionally, the nonlinear optical signal includes a second harmonic signal, a third harmonic signal, a sum frequency response signal, and a difference frequency response signal.
Optionally, the method further includes: the wafer alignment focusing system comprises: the imaging unit is used for acquiring imaging patterns at different positions on the surface of the wafer to be detected; the sensor is used for acquiring the position information of the wafer to be detected in a first direction, and the first direction is perpendicular to the surface of the wafer to be detected.
Optionally, the control system includes: the imaging operation unit is used for acquiring the position information of the wafer to be detected according to the imaging patterns at different positions on the surface of the wafer to be detected; and the first position control unit is used for moving the wafer bearing device along the direction parallel to a reference plane according to the position information, and the reference plane is parallel to the surface of the wafer to be detected.
Optionally, the control system includes: and the second position control unit is used for moving the wafer bearing device according to the position information in the first direction so as to realize the focusing of the first incident light on the surface of the wafer to be tested.
Optionally, the incident light system includes: a first light source for emitting a first initial incident light; and the first incident light modulation unit is used for modulating the first initial incident light to form the first incident light transmitted to the wafer.
Optionally, the first light source comprises a laser emitter.
Optionally, the first incident light modulation unit: modulation means for varying one or more of an optical intensity, a polarization parameter, and a focal length of the initial incident light; and the monitoring device is used for monitoring incident light information of the first incident light and feeding back the incident light information to the control system.
Optionally, the incident light information includes: power, light intensity, polarization parameters, and optical pulse parameters.
Optionally, the incident light system further includes: and the second light source is used for emitting second incident light to the wafer to be detected, and the second incident light is reflected by the wafer to be detected to form second reflected light.
Optionally, the method further includes: and the additional signal acquisition system is used for acquiring an additional optical signal according to the second reflected light and transmitting the additional optical signal to the control system.
Optionally, the incident light system further includes: and the second incident light modulation unit is used for modulating the second incident light and then emitting the modulated second incident light to the surface of the wafer to be detected.
Optionally, the method further includes: and the additional signal acquisition system is used for acquiring an additional optical signal from the first reflected light and transmitting the additional optical signal to the control system.
Optionally, the method further includes: and the main signal acquisition system is used for acquiring the nonlinear optical signal and transmitting the nonlinear optical signal to the control system.
Optionally, the optical signal sorting system includes: a filter for passing a portion of the first reflected light having a predetermined wavelength range to form a first transition optical signal; a polarizer for passing the first transitional optical signal having a predetermined polarization parameter to form the nonlinear optical signal.
Optionally, the optical signal sorting system includes: a polarizer for passing a portion of the first reflected light having a predetermined polarization parameter to form a second transitional optical signal; an optical filter for passing the second transition optical signal having a predetermined wavelength range to form the nonlinear optical signal.
Optionally, the carrying device includes: the bearing plate is used for bearing the wafer to be detected; the fixing device is arranged on the bearing disc and used for fixing the wafer to be detected on the surface of the bearing disc; and the mechanical moving assembly is used for driving the bearing disc to move.
Optionally, the fixing device is a vacuum chuck or a buckle fixed on the edge of the bearing plate.
Optionally, the method further includes: a focusing unit: for focusing the first incident light on the surface of the unit to be detected.
Optionally, the method further includes: an optical collimating unit: the optical signal sorting system is used for collimating the first reflected light and enabling the collimated first reflected light to be incident to the optical signal sorting system.
Correspondingly, the invention also provides a detection method adopting the semiconductor detection device, which comprises the following steps: providing a wafer to be detected; emitting first incident light to the wafer to be detected, wherein the first incident light is reflected by the wafer to be detected to form first reflected light; acquiring the first reflected light and sorting out a nonlinear optical signal from the first reflected light; and acquiring first defect information of the wafer to be detected according to the nonlinear optical signal.
Optionally, the wafer to be tested includes: the device comprises a substrate and a dielectric layer positioned on the surface of the substrate.
Optionally, the first defect information includes an interface electrical property defect at an interface between the substrate and the dielectric layer; the interfacial electrical property defect comprises: interface state charge potential well defects, dielectric layer inherent charge distribution and defects, and substrate semiconductor doping concentration.
Optionally, the wafer to be tested includes: the semiconductor device comprises a substrate and a semiconductor layer positioned on the surface of the substrate; the semiconductor layer is made of a compound semiconductor material or a simple substance semiconductor material.
Optionally, the compound semiconductor material comprises gallium arsenide, gallium nitride or silicon carbide; the forming process of the semiconductor layer comprises an epitaxial process.
Optionally, the first defect information includes: crystal structure defects, stress distribution within the semiconductor layer, and epitaxial thickness of the semiconductor layer.
Compared with the prior art, the technical scheme of the invention has the following advantages:
according to the technical scheme of the semiconductor detection device, the nonlinear optical signals for detection can be sorted out from the first reflected light reflected by the surface of the wafer to be detected. And the nonlinear optical signal can be used for representing interface state charge potential well defects, dielectric layer inherent charges and defects or semiconductor crystal structure defects. Therefore, nondestructive atomic defect detection of the semiconductor device is realized in real time in the semiconductor manufacturing process. Moreover, the real-time semiconductor detection device can realize batch detection, and is beneficial to shortening the period of semiconductor manufacturing process and reducing the cost.
In the detection method, the nonlinear optical signals sorted out from the first reflected light can represent the defects of the interface state charge potential well, the inherent charges and the defects of the dielectric layer or the defects of the semiconductor crystal structure, so that the nondestructive atomic-level defect detection of the semiconductor device in real time in the semiconductor manufacturing process is realized, the semiconductor manufacturing process period is favorably shortened, the cost is reduced, and the batch defect detection is realized.
Drawings
Fig. 1 to 8 are schematic structural views of a semiconductor inspection apparatus according to various embodiments of the present invention;
fig. 9 is a schematic flow chart of a detection method according to an embodiment of the present invention.
Detailed Description
As described in the background art, the realization of real-time atomic defect detection in manufacturing process is one of the problems to be solved in the field of semiconductor yield detection.
In order to solve the problem of real-time detection of atomic defects occurring in novel materials and process flows in the advanced process development and production of semiconductors, the embodiment of the invention provides a semiconductor detection device and a detection method. In the semiconductor detection device, a nonlinear optical signal for detection can be sorted from the first reflected light so as to represent the defects of the interface state charge potential well, the inherent charges and the defects of the dielectric layer or the defects of the semiconductor crystal structure, thereby realizing nondestructive atomic-level defect detection of the semiconductor device.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 1 to 8 are schematic structural views of a semiconductor inspection apparatus according to an embodiment of the present invention.
Referring to fig. 1, the structure of the semiconductor inspection apparatus includes:
the wafer carrying device 100 is used for carrying a wafer 101 to be detected;
the incident light system 200 is configured to emit a first incident light 210 to the wafer to be detected, where the first incident light 210 is reflected by the wafer to be detected to form a first reflected light 211;
an optical signal sorting system 300 for sorting out nonlinear optical signals 212 from the first reflected light 211;
the control system 400 is configured to obtain first defect information of the wafer 101 to be detected according to the nonlinear optical signal 212.
The following detailed description will be made in conjunction with the accompanying drawings.
The semiconductor detection device can represent the atomic-level defects in the wafer 101 to be detected through the nonlinear optical signal 212, so that the atomic-level defects or crystal defects in the wafer can be obtained in a real-time and non-destructive manner in the process.
Specifically, the first incident light 210 is incident to the to-be-detected position on the surface of the wafer 101 to be detected, so that the material of the wafer 101 to be detected and the light field emission of the first incident light 210 interact to generate an optical response, and the nonlinear optical signal 212 in the optical response can be used for representing the atomic-level defect in the wafer 101 to be detected. Because the optical detection means is adopted, the wafer 101 to be detected does not need to be subjected to destructive detection, and the optical detection can be carried out at certain key nodes in the process, so that the defect can be found in real time to improve the process in time.
The nonlinear optical signals 212 include sum frequency response (SFG), difference frequency response (DFG), second harmonic Signal (SHG), third harmonic signal (THG), and higher order nonlinear optical signals.
In this embodiment, referring to fig. 2, the wafer 101 to be detected includes: a substrate 110 and a dielectric layer 111 on the surface of the substrate 110; in this embodiment, the substrate 110 is made of monocrystalline silicon, and the dielectric layer 111 is made of silicon oxide. In other embodiments, the substrate 110 material can also be other semiconductor materials with central symmetry; the dielectric layer 111 is made of other dielectric materials, such as silicon nitride, silicon oxynitride, a high-K dielectric material (with a dielectric constant greater than 3.9), a low-K dielectric material (with a dielectric constant greater than 2.5 and less than 3.9), or an ultra-low-K dielectric material (with a dielectric constant less than 2.5).
The nonlinear optical signal 212 can characterize interfacial state charge well defects (Dit) at the interface between the dielectric layer 111 and the substrate 110, as well as intrinsic charges and defects within the dielectric layer. Wherein, the interface state charge potential well defects are distributed at the interface of the semiconductor and the oxide film; the intrinsic charges and defects in the dielectric layer are distributed in the dielectric layer, and the intrinsic charges and defects of the dielectric layer 111 are intrinsic defects introduced by process factors in the film forming process of the dielectric layer 111 and can be damaged by materials caused by subsequent processes. The interface state charge well defects or the dielectric layer intrinsic charges and defects cause deterioration of electrical properties between the dielectric layer 111 and the substrate 110.
Specifically, since the substrate 110 is made of monocrystalline silicon, which is a centrosymmetric material, when an interface state charge a exists at an interface between the dielectric layer 111 and the substrate 110, or an intrinsic charge B exists inside the dielectric layer 111, the interface state charge a or the intrinsic charge B may induce a change in a space charge distribution in the substrate 110. Once the space charge distribution within the substrate changes, it can cause the single crystal silicon material to break down due to central symmetry and generate an electric field induced signal. After the nonlinear optical signal 212 is coupled with the electric field induced signal, the change of the spatial charge distribution in the substrate 110 can be reflected, and then the defect distribution of the interface state charge well at the interface between the dielectric layer 111 and the substrate 110, or the inherent charge and defect distribution in the dielectric layer 111 can be represented.
In one embodiment, the dielectric layer 111 is patterned. In another embodiment, the dielectric layer 111 is not patterned.
In another embodiment, referring to fig. 3, the wafer 100 to be tested includes: a substrate 120 and a semiconductor layer 121 on a surface of the substrate 120; the semiconductor layer 121 is made of a compound or simple substance semiconductor material; compound semiconductor materials include gallium arsenide, gallium nitride, silicon carbide. The nonlinear optical signal 212 is capable of responding to crystal structure defects in the compound semiconductor material to enable real-time monitoring of the crystal quality of the semiconductor layer 121.
In this embodiment, the semiconductor layer is formed on the substrate surface by an epitaxial process, and when the epitaxial process causes a crystal structure defect to be generated in the semiconductor layer, the crystal structure defect is coupled with the nonlinear optical signal 212, so that the nonlinear optical signal 212 can characterize the lattice defect or the crystal uniformity defect. Wherein the crystal structure defects include lattice defects or crystal uniformity defects, which refer to defects where the ordered arrangement of the crystal lattice is distorted.
In one embodiment, the semiconductor layer 121 is patterned. In another embodiment, the semiconductor layer 121 is not patterned.
The optical signal sorting system 300 is used to separate the nonlinear optical signal 212 from the first reflected light 211.
Referring to fig. 4, the optical signal sorting system 300 includes: a filter 301 and a polarizer 302. In this embodiment, the optical filter 301 is configured to pass a portion of the first reflected light 211 having a predetermined wavelength range to form a first transition optical signal; the polarizer 302 is configured to pass the first transition optical signal having a predetermined polarization parameter to form the nonlinear optical signal 212. That is, the first reflected light 211 is filtered by the filter 301, and then passes through the polarizer 302 to filter out the nonlinear optical signal 212 with a predetermined polarization parameter.
Referring to fig. 5, in another embodiment, the polarizer 302 is used for passing a portion of the first reflected light with a predetermined polarization parameter to form a second transition optical signal; the optical filter 301 is configured to pass the second transition optical signal having a predetermined wavelength range to form the nonlinear optical signal 212.
Referring to fig. 1, in the present embodiment, the semiconductor inspection apparatus further includes a wafer alignment focusing system 500, wherein the wafer alignment focusing system 500 is configured to align the first incident light 210 to the position to be inspected on the surface of the wafer 100 to be inspected and perform focusing.
The wafer alignment focusing system 500 includes: the imaging unit 501 is configured to obtain imaging patterns at different positions on the surface of the wafer 101 to be measured; the sensor 502 is configured to acquire position information of the wafer 101 to be measured in a first direction Z, where the first direction Z is perpendicular to the surface of the wafer 101 to be measured.
In this embodiment, the control system 400 includes: the imaging operation unit 401 is configured to obtain position information of the wafer to be detected according to the imaging patterns at different positions on the surface of the wafer 101 to be detected; a first position control unit 402, configured to move the wafer carrier 100 along a direction parallel to a reference plane XY (i.e., a plane formed by an X coordinate and a Y coordinate) according to the position information, where the reference plane XY is parallel to the surface of the wafer 101 to be tested, so as to achieve alignment of the wafer 101 to be tested.
After the imaging unit 501 obtains the imaging patterns of different positions on the surface of the wafer 101 to be detected, the control system 400 can obtain the position information of the wafer 101 to be detected through the imaging patterns, and further control the wafer carrying device 100 to move to a desired position for alignment.
In this embodiment, the control system 400 further includes: the second position control unit 403 is configured to move the wafer carrier 100 according to the position information of the wafer 101 to be tested in the first direction Z.
After the sensor 502 obtains the position information of the wafer 101 to be detected in the first direction Z, the position information is sent to the second position control unit 403, and the second position control unit 403 moves the wafer carrying device 100 according to the position information in the first direction Z until the first incident light 210 can be focused at the designated height on the surface of the wafer 101 to be detected.
The incident light system 200 includes: a first light source 201 for emitting a first initial incident light; the first incident light modulation unit 202 is configured to modulate the first initial incident light to form the first incident light 210 emitted to the wafer 101.
In the present embodiment, the first light source 201 includes a laser emitter.
Referring to fig. 6, in the present embodiment, the first incident light modulation unit 202 includes: a modulation device 220 for changing one or more of the light intensity, polarization parameters and focal length of the initial incident light 222; the monitoring device 221 is configured to monitor incident light information of the first incident light 210, and feed back the incident light information to the control system 400.
Wherein the incident light information includes: power, light intensity, polarization parameters, focal length, etc. The modulation device 220 is used for regulating and controlling optical parameters of the first incident light 210 incident on the surface of the wafer 101 to be measured. The monitoring device 221 can monitor parameters of the first incident light 210 in real time, and feed back monitored incident light information to the control system 400, and the control system 400 can control the modulation device to adjust optical parameters of the first incident light 210 according to the obtained incident light information.
With continued reference to fig. 1, in the present embodiment, the semiconductor inspection apparatus further includes an additional signal acquisition system 600. The first incident light 210 generates additional reflected light 213 in addition to the first reflected light 211 on the surface of the wafer 101 to be measured; the additional signal acquisition system 600 is configured to acquire an additional optical signal 214 from the additional reflected light 213 and transmit the additional optical signal 214 to the control system 400. The additional optical signal 214 can be used to characterize the second defect information, which is complementary to the first defect information, so that the detection result is more comprehensive.
In one embodiment, the nonlinear optical signal 212 is used to characterize a first type of defect and the additional optical signal 214 is used to characterize a second type of defect, such that the nonlinear optical signal 212 and the additional optical signal 214 achieve a complementary detection result.
In another embodiment, the additional optical signal 214 is responsive to both a third type of defect and a fourth type of defect, however, the additional optical signal 214 is not capable of distinguishing between the third type of defect and the fourth type of defect. The nonlinear optical signal 212 can respond to the third type of defect but cannot respond to the fourth type of defect, so that the detection result of the additional optical signal 214 can be classified through the nonlinear optical signal 212, and the accuracy of the detection result is improved.
In this embodiment, the additional signal collection system 600 obtains the additional optical signal through the additional reflected light 213, that is, the additional signal collection system 600 and the optical signal sorting system 300 obtain the reflected or scattered light obtained by reflecting or scattering the incident light provided by the same light source.
In another embodiment, the additional signal collection system 600 and the optical signal sorting system 300 acquire reflected or scattered light obtained by reflecting or scattering incident light provided by different light sources.
Specifically, referring to fig. 7, the incident light system 200 further includes: the second light source 203 is configured to emit a second incident light 215 to the wafer 101 to be detected, where the second incident light 215 is reflected by the wafer to be detected to form a second reflected light 216. In an embodiment, the incident light system 200 further includes: the second incident light modulation unit 204 is configured to modulate the second incident light 215, and then emit the modulated second incident light 215 to the surface of the wafer 101 to be detected. The additional signal acquisition system 600 is configured to acquire an additional optical signal according to the second reflected light 216 and transmit the additional optical signal to the control system 400.
In this embodiment, the method further includes: a main signal acquisition system 310 for acquiring the nonlinear optical signal 212 and transmitting the nonlinear optical signal to the control system 400.
The carrying device 100 comprises: the bearing plate is used for bearing the wafer 101 to be detected; the fixing device is arranged on the bearing disc and used for fixing the wafer 101 to be detected on the surface of the bearing disc; and the mechanical moving assembly is used for driving the bearing disc to move. Wherein, the fixing device is a vacuum chuck or a buckle fixed on the edge of the bearing plate. The mechanical moving assembly can move the carrier tray to a designated position according to a signal provided by the first position control unit 402 (shown in fig. 1) or the second position control unit 403 (shown in fig. 1).
Referring to fig. 8, the semiconductor inspection apparatus further includes: the focusing unit 230 is configured to focus the first incident light 210 on the surface of the wafer 101 to be detected; an optical collimating unit 231, configured to collimate the first reflected light 211, and make the collimated first reflected light 211 incident to the optical signal sorting system 300.
Correspondingly, the embodiment of the invention also provides a method for detecting by adopting the semiconductor detection device. Referring to fig. 9, fig. 9 is a schematic flow chart of a detection method according to an embodiment of the invention, including:
step S1, providing a wafer to be detected;
step S2, emitting first incident light to the wafer to be detected, wherein the first incident light is reflected by the wafer to be detected to form first reflected light;
step S3, acquiring the first reflected light, and sorting out a nonlinear optical signal from the first reflected light;
and step S4, acquiring first defect information of the wafer to be detected according to the nonlinear optical signal.
The following detailed description will be made in conjunction with the accompanying drawings.
Referring to fig. 1, fig. 2 and fig. 5, a wafer 101 to be inspected is provided.
In this embodiment, the wafer 101 to be detected includes: a substrate 110 and a dielectric layer 111 on the surface of the substrate 110; in this embodiment, the substrate 110 is made of monocrystalline silicon, and the dielectric layer 111 is made of silicon oxide. In other embodiments, the substrate 110 material can also be other semiconductor materials with central symmetry; the dielectric layer 111 is made of other dielectric materials, such as silicon nitride, silicon oxynitride, a high-K dielectric material (with a dielectric constant greater than 3.9), a low-K dielectric material (with a dielectric constant greater than 2.5 and less than 3.9), or an ultra-low-K dielectric material (with a dielectric constant less than 2.5).
Wherein, the interface between the dielectric layer 111 and the substrate 110 has an interface state charge trap defect (Dit); alternatively, the dielectric layer has intrinsic charges and defects therein. The interface state charge potential well defects are distributed at the interface of the semiconductor and the oxide film; intrinsic charges and defects in the dielectric layer 111 are distributed in the dielectric layer 111, and the intrinsic charges and defects of the dielectric layer 111 are intrinsic defects introduced by process factors in the film forming process of the dielectric layer 111 and can be damaged by materials caused by subsequent processes. The interface state charge well defect or the intrinsic charges and defects of the dielectric layer 111 may cause deterioration of electrical properties between the dielectric layer 111 and the substrate 110.
In another embodiment, referring to fig. 1, fig. 3 and fig. 5 in combination, the wafer 100 to be tested includes: a substrate 120 and a semiconductor layer 121 on a surface of the substrate 120; the semiconductor layer 121 is made of a compound or simple substance semiconductor material; the compound semiconductor material comprises gallium arsenide, gallium nitride and silicon carbide; the forming process of the semiconductor layer comprises an epitaxial process.
With reference to fig. 5 and fig. 1, a first incident light 210 is emitted to the wafer 101 to be detected, and the first incident light 210 forms a first reflected light 211 through reflection of the wafer to be detected.
Referring to fig. 5 and fig. 1 in combination, the first reflected light 211 is acquired, and a nonlinear optical signal 212 is sorted out from the first reflected light 211.
The nonlinear optical signal 212 represents atomic-level defects in the wafer 101 to be detected, so that the atomic-level defects or crystal defects in the wafer can be obtained in real time in a nondestructive manner in the process.
Specifically, the first incident light 210 is incident to the to-be-detected position on the surface of the wafer 101 to be detected, so that the material of the wafer 101 to be detected and the light field emission of the first incident light 210 interact to generate an optical response, and the nonlinear optical signal 212 in the optical response can be used for representing the atomic-level defect in the wafer 101 to be detected. Because the optical detection means is adopted, the wafer 101 to be detected does not need to be subjected to destructive detection, and the optical detection can be carried out at key nodes in the process, so that the defect can be found in real time to improve the process in time.
The nonlinear optical signals 212 include sum frequency response (SFG), difference frequency response (DFG), second harmonic Signal (SHG), third harmonic signal (THG), and higher order nonlinear optical signals.
In this embodiment, referring to fig. 2, the wafer 101 to be detected includes: a substrate 110, and a dielectric layer 111 on the surface of the substrate 110.
The nonlinear optical signal 212 can characterize interfacial state charge well defects (Dit) at the interface between the dielectric layer 111 and the substrate 110, as well as intrinsic charges and defects within the dielectric layer. Wherein, the interface state charge potential well defects are distributed at the interface of the semiconductor and the oxide film; the intrinsic charges and defects in the dielectric layer are distributed in the dielectric layer, and the intrinsic charges and defects of the dielectric layer 111 are intrinsic defects introduced by process factors in the film forming process of the dielectric layer 111 and can be damaged by materials caused by subsequent processes. The interface state charge well defects or the dielectric layer intrinsic charges and defects cause deterioration of electrical properties between the dielectric layer 111 and the substrate 110.
Specifically, since the substrate 110 is made of monocrystalline silicon, which is a centrosymmetric material, when an interface state charge a exists at an interface between the dielectric layer 111 and the substrate 110, or an intrinsic charge B exists inside the dielectric layer 111, the interface state charge a or the intrinsic charge B may induce a change in a space charge distribution in the substrate 110. Once the space charge distribution within the substrate changes, it can cause the single crystal silicon material to break down due to central symmetry and generate an electric field induced signal. After the nonlinear optical signal 212 is coupled with the electric field induced signal, the change of the space charge distribution in the substrate 110 can be reflected, and then whether the interface state charge exists at the interface between the dielectric layer 111 and the substrate 110 or whether the inherent charge exists in the dielectric layer 111 can be represented.
In another embodiment, referring to fig. 3, the wafer 100 to be tested includes: a substrate 120 and a semiconductor layer 121 on a surface of the substrate 120; the semiconductor layer 121 is made of a compound or simple substance semiconductor material; compound semiconductor materials include gallium arsenide, gallium nitride, silicon carbide.
The nonlinear optical signal 212 is capable of responding to crystal structure defects in the compound semiconductor material to enable real-time monitoring of the crystal quality of the semiconductor layer 121.
In this embodiment, the semiconductor layer is formed on the substrate surface by an epitaxial process, and when the epitaxial process causes a crystal structure defect to be generated in the semiconductor layer, the crystal structure defect is coupled with the nonlinear optical signal 212, so that the nonlinear optical signal 212 can characterize the lattice defect or the crystal uniformity defect. Wherein the crystal structure defects include lattice defects or crystal uniformity defects, which refer to defects where the ordered arrangement of the crystal lattice is distorted.
With reference to fig. 5 and fig. 1, first defect information of the wafer 101 to be detected is obtained according to the nonlinear optical signal 212.
In this embodiment, as shown in fig. 2, the wafer 101 to be detected includes: a substrate 110 and a dielectric layer 111 on the surface of the substrate 110; the first defect information comprises an interface electrical property defect at an interface between the substrate and the dielectric layer; the interfacial electrical property defect comprises: interface state charge potential well defects, dielectric layer intrinsic charge distribution and defects, and substrate semiconductor doping concentration.
In another embodiment, as shown in fig. 3, the wafer 100 to be tested includes: a substrate 120 and a semiconductor layer 121 on a surface of the substrate 120; the first defect information includes: crystal structure defects, stress distribution within the semiconductor layer, and epitaxial thickness of the semiconductor layer.
The first incident light 210 generates additional reflected light 213 in addition to the first reflected light 211 on the surface of the wafer 101 to be measured; the detection method further comprises the following steps: an additional optical signal 214 is obtained from the additional reflected light 213 and second defect information is obtained from the additional optical signal 214. And the second defect information is complementary with the first defect information, so that the detection result is more comprehensive.
In the present embodiment, the additional optical signal 214 and the nonlinear optical signal 212 are both reflected from the first incident light 210 provided by the first light source 201.
In another embodiment, referring to fig. 7, the detecting method includes: emitting a second incident light 215 to the wafer 101 to be detected, wherein the second incident light 215 is reflected or scattered by the wafer 101 to be detected to form a second reflected light 216; an additional optical signal is obtained from the second reflected light 216 and second defect information is obtained from the additional optical signal.
In this embodiment, before the second incident light 215 is emitted to the wafer to be detected, the second incident light 215 can be modulated, and then the modulated second incident light 215 is emitted to the surface of the wafer to be detected 101.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (26)
1. A semiconductor inspection apparatus, comprising:
the wafer bearing device is used for bearing the wafer to be detected;
the incident light system is used for emitting first incident light to the wafer to be detected, and the first incident light is reflected by the wafer to be detected to form first reflected light;
an optical signal sorting system for sorting out nonlinear optical signals from the first reflected light;
and the control system is used for acquiring first defect information of the wafer to be detected according to the nonlinear optical signal.
2. The semiconductor test device of claim 1, wherein the nonlinear optical signal comprises a second harmonic signal, a third harmonic signal, a sum frequency response signal, and a difference frequency response signal.
3. The semiconductor inspection device of claim 1, further comprising: the wafer alignment focusing system comprises: the imaging unit is used for acquiring imaging patterns at different positions on the surface of the wafer to be detected; the sensor is used for acquiring the position information of the wafer to be detected in a first direction, and the first direction is perpendicular to the surface of the wafer to be detected.
4. The semiconductor inspection device of claim 3, wherein the control system comprises: the imaging operation unit is used for acquiring the position information of the wafer to be detected according to the imaging patterns at different positions on the surface of the wafer to be detected; and the first position control unit is used for moving the wafer bearing device along the direction parallel to a reference plane according to the position information, and the reference plane is parallel to the surface of the wafer to be detected.
5. The semiconductor inspection device of claim 3, wherein the control system comprises: and the second position control unit is used for moving the wafer bearing device according to the position information in the first direction so as to realize the focusing of the first incident light on the surface of the wafer to be tested.
6. The semiconductor inspection device of claim 1, wherein the incident light system comprises: a first light source for emitting a first initial incident light; and the first incident light modulation unit is used for modulating the first initial incident light to form the first incident light transmitted to the wafer.
7. The semiconductor inspection device of claim 6, wherein the first light source comprises a laser emitter.
8. The semiconductor inspection device according to claim 6, wherein the first incident light modulation unit: modulation means for varying one or more of an optical intensity, a polarization parameter, and a focal length of the initial incident light; and the monitoring device is used for monitoring incident light information of the first incident light and feeding back the incident light information to the control system.
9. The semiconductor test device of claim 8, wherein the incident light information comprises: power, light intensity, polarization parameters, and optical pulse parameters.
10. The semiconductor inspection device of claim 6, wherein the incident light system further comprises: and the second light source is used for emitting second incident light to the wafer to be detected, and the second incident light is reflected by the wafer to be detected to form second reflected light.
11. The semiconductor inspection device of claim 10, further comprising: and the additional signal acquisition system is used for acquiring an additional optical signal according to the second reflected light and transmitting the additional optical signal to the control system.
12. The semiconductor inspection device of claim 10, wherein the incident light system further comprises: and the second incident light modulation unit is used for modulating the second incident light and then emitting the modulated second incident light to the surface of the wafer to be detected.
13. The semiconductor inspection device of claim 1, further comprising: and the additional signal acquisition system is used for acquiring an additional optical signal from the first reflected light and transmitting the additional optical signal to the control system.
14. The semiconductor inspection device of claim 1, further comprising: and the main signal acquisition system is used for acquiring the nonlinear optical signal and transmitting the nonlinear optical signal to the control system.
15. The semiconductor inspection apparatus of claim 1, wherein the optical signal sorting system comprises: a filter for passing a portion of the first reflected light having a predetermined wavelength range to form a first transition optical signal; a polarizer for passing the first transitional optical signal having a predetermined polarization parameter to form the nonlinear optical signal.
16. The semiconductor inspection apparatus of claim 1, wherein the optical signal sorting system comprises: a polarizer for passing a portion of the first reflected light having a predetermined polarization parameter to form a second transitional optical signal; an optical filter for passing the second transition optical signal having a predetermined wavelength range to form the nonlinear optical signal.
17. The semiconductor test device of claim 1, wherein the carrier device comprises: the bearing plate is used for bearing the wafer to be detected; the fixing device is arranged on the bearing disc and used for fixing the wafer to be detected on the surface of the bearing disc; and the mechanical moving assembly is used for driving the bearing disc to move.
18. The semiconductor test device of claim 17, wherein the fixing means is a vacuum chuck or a snap-fit to an edge of the carrier plate.
19. The semiconductor inspection device of claim 1, further comprising: a focusing unit: for focusing the first incident light on the surface of the unit to be detected.
20. The semiconductor inspection device of claim 1, further comprising: an optical collimating unit: the optical signal sorting system is used for collimating the first reflected light and enabling the collimated first reflected light to be incident to the optical signal sorting system.
21. A testing method using the semiconductor testing device according to any one of claims 1 to 20, comprising:
providing a wafer to be detected;
emitting first incident light to the wafer to be detected, wherein the first incident light is reflected by the wafer to be detected to form first reflected light;
acquiring the first reflected light and sorting out a nonlinear optical signal from the first reflected light;
and acquiring first defect information of the wafer to be detected according to the nonlinear optical signal.
22. The inspection method of claim 21, wherein the wafer under test comprises: the device comprises a substrate and a dielectric layer positioned on the surface of the substrate.
23. The inspection method of claim 22, wherein the first defect information includes an interfacial electrical property defect at an interface between the substrate and a dielectric layer; the interfacial electrical property defect comprises: interface state charge potential well defects, dielectric layer inherent charge distribution and defects, and substrate semiconductor doping concentration.
24. The inspection method of claim 21, wherein the wafer under test comprises: the semiconductor device comprises a substrate and a semiconductor layer positioned on the surface of the substrate; the semiconductor layer is made of a compound semiconductor material or a simple substance semiconductor material.
25. The detection method according to claim 24, wherein the compound semiconductor material comprises gallium arsenide, gallium nitride, or silicon carbide; the forming process of the semiconductor layer comprises an epitaxial process.
26. The inspection method of claim 24, wherein the first defect information comprises: crystal structure defects, stress distribution within the semiconductor layer, and epitaxial thickness of the semiconductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811544127.4A CN111326433B (en) | 2018-12-17 | 2018-12-17 | Semiconductor inspection apparatus and inspection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811544127.4A CN111326433B (en) | 2018-12-17 | 2018-12-17 | Semiconductor inspection apparatus and inspection method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111326433A true CN111326433A (en) | 2020-06-23 |
| CN111326433B CN111326433B (en) | 2024-01-19 |
Family
ID=71172383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811544127.4A Active CN111326433B (en) | 2018-12-17 | 2018-12-17 | Semiconductor inspection apparatus and inspection method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111326433B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112485272A (en) * | 2020-12-14 | 2021-03-12 | 紫创(南京)科技有限公司 | Semiconductor detection device and detection method |
| CN112663138A (en) * | 2020-10-30 | 2021-04-16 | 松山湖材料实验室 | Semiconductor wafer epitaxial growth device and working method thereof |
| CN113325004A (en) * | 2021-07-07 | 2021-08-31 | 上海超硅半导体股份有限公司 | Method and device for detecting surface defects of semiconductor wafer |
| CN115266758A (en) * | 2022-09-27 | 2022-11-01 | 苏州高视半导体技术有限公司 | Wafer detection system, wafer detection method, electronic device and storage medium |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030234925A1 (en) * | 2002-06-19 | 2003-12-25 | Hunt Jeffrey H. | Broadband infrared spectral surface spectroscopy |
| CN1496478A (en) * | 2001-02-14 | 2004-05-12 | Ӧ�ò��Ϲ�˾ | Laser scanning wafer inspection using nonlinear optical phenomena |
| US20080273193A1 (en) * | 2007-05-02 | 2008-11-06 | Hitachi High-Technologies Corporation | Pattern defect inspection apparatus and method |
| TW200937005A (en) * | 2008-02-22 | 2009-09-01 | Ind Tech Res Inst | Apparatus for measuring defects in semiconductor wafers |
| CN108369186A (en) * | 2015-09-03 | 2018-08-03 | 加州理工学院 | Characterize the optical system and method for high K medium |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4491391B2 (en) * | 2005-08-05 | 2010-06-30 | 株式会社日立ハイテクノロジーズ | Defect inspection apparatus and defect inspection method |
-
2018
- 2018-12-17 CN CN201811544127.4A patent/CN111326433B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1496478A (en) * | 2001-02-14 | 2004-05-12 | Ӧ�ò��Ϲ�˾ | Laser scanning wafer inspection using nonlinear optical phenomena |
| US20030234925A1 (en) * | 2002-06-19 | 2003-12-25 | Hunt Jeffrey H. | Broadband infrared spectral surface spectroscopy |
| US20080273193A1 (en) * | 2007-05-02 | 2008-11-06 | Hitachi High-Technologies Corporation | Pattern defect inspection apparatus and method |
| TW200937005A (en) * | 2008-02-22 | 2009-09-01 | Ind Tech Res Inst | Apparatus for measuring defects in semiconductor wafers |
| CN108369186A (en) * | 2015-09-03 | 2018-08-03 | 加州理工学院 | Characterize the optical system and method for high K medium |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112663138A (en) * | 2020-10-30 | 2021-04-16 | 松山湖材料实验室 | Semiconductor wafer epitaxial growth device and working method thereof |
| CN112485272A (en) * | 2020-12-14 | 2021-03-12 | 紫创(南京)科技有限公司 | Semiconductor detection device and detection method |
| CN112485272B (en) * | 2020-12-14 | 2021-11-09 | 紫创(南京)科技有限公司 | Semiconductor detection device and detection method |
| WO2022126676A1 (en) * | 2020-12-14 | 2022-06-23 | 紫创(南京)科技有限公司 | Semiconductor detection device and detection method |
| CN113325004A (en) * | 2021-07-07 | 2021-08-31 | 上海超硅半导体股份有限公司 | Method and device for detecting surface defects of semiconductor wafer |
| WO2023280153A1 (en) * | 2021-07-07 | 2023-01-12 | 上海超硅半导体股份有限公司 | Method and apparatus for detecting surface defect of semiconductor wafer |
| CN115266758A (en) * | 2022-09-27 | 2022-11-01 | 苏州高视半导体技术有限公司 | Wafer detection system, wafer detection method, electronic device and storage medium |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111326433B (en) | 2024-01-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111326433B (en) | Semiconductor inspection apparatus and inspection method | |
| CN210294061U (en) | Defect inspection apparatus for simultaneously detecting photoluminescence and scattered light | |
| US7643139B2 (en) | Method and apparatus for detecting defects | |
| CN111415875A (en) | Semiconductor detection device, detection method and semiconductor process device | |
| JP6604629B2 (en) | Inspection apparatus and inspection method | |
| JP2005277417A (en) | Method and system for determining one or a plurality of characteristics of sample | |
| JP2016502082A (en) | Failure analysis apparatus and method using heat generation distribution measurement | |
| US20130155400A1 (en) | Method and device for inspecting for defects | |
| JPH05281141A (en) | Method and apparatus for photoluminescence measurement in crystal | |
| WO2021037282A1 (en) | Semiconductor testing apparatus and testing method | |
| CN111430258A (en) | Semiconductor detection device and detection method thereof | |
| CN210006695U (en) | Semiconductor detection device and semiconductor process device | |
| JPH09167789A (en) | Evaluation method for semiconductor device | |
| CN112485272B (en) | Semiconductor detection device and detection method | |
| KR20230142454A (en) | Second harmonic-based semiconductor multilayer structure measurement method and device | |
| JP5301770B2 (en) | Thin film semiconductor crystallinity measuring apparatus and method | |
| WO2022126677A1 (en) | Semiconductor inspection device and inspection method | |
| CN113970559A (en) | Semiconductor deep energy level defect detection device and detection method | |
| KR101360251B1 (en) | Reviewing apparatus of wafer defect and Method thereof | |
| KR101682520B1 (en) | Inspection apparatus and method | |
| JPH05215696A (en) | Method and apparatus for inspecting defect | |
| JPH07167793A (en) | Phase difference semiconductor inspection device and its production method | |
| CN211455649U (en) | Semiconductor detection device | |
| JPH11274256A (en) | Sample checking device | |
| US10473579B2 (en) | Apparatus for inspecting material property of plurality of measurement objects |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |