CN112485272A - Semiconductor detection device and detection method - Google Patents

Semiconductor detection device and detection method Download PDF

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Publication number
CN112485272A
CN112485272A CN202011462503.2A CN202011462503A CN112485272A CN 112485272 A CN112485272 A CN 112485272A CN 202011462503 A CN202011462503 A CN 202011462503A CN 112485272 A CN112485272 A CN 112485272A
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wafer
incident light
optical signal
height
position information
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CN112485272B (en
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李海鹏
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Zichuang Nanjing Technology Co ltd
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Zichuang Nanjing Technology Co ltd
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Priority to PCT/CN2020/137908 priority patent/WO2022126676A1/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95684—Patterns showing highly reflecting parts, e.g. metallic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

A semiconductor detection device and a detection method are provided, wherein the detection device comprises: the wafer bearing device is used for bearing the wafer to be tested; the incident light system is used for emitting incident light to the wafer to be detected, an included angle is formed between the incident light and a first direction, the incident light is reflected by the wafer to be detected to form reflected light, and the first direction is a normal direction perpendicular to the surface of the wafer to be detected; the optical signal sorting system is used for sorting out fundamental wave optical signals from the reflected light; the sensing system is used for receiving the fundamental wave optical signal and acquiring position information according to the fundamental wave optical signal; and the control system is used for receiving the position information and adjusting the height of the wafer bearing device in the first direction according to the position information. The detection device and the method improve the existing semiconductor detection device.

Description

Semiconductor detection device and detection method
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor detection device and a detection method.
Background
In a semiconductor process, the yield of the device is easily reduced due to defects in the process or material, and the production cost is increased. In particular, as the critical dimensions of circuits are continuously reduced, the requirements for process control become more and more strict.
In order to find and solve problems in real time in the actual production process, products need to be detected online and nondestructively, and then defects are imaged and analyzed for element components through defect observation equipment such as an electron microscope. Among non-destructive defect detection devices, optical defect detection devices have been widely accepted and studied due to their high sensitivity and good applicability to batch tests.
However, the existing optical defect detection apparatus still needs to be improved.
Disclosure of Invention
The invention provides a semiconductor detection device and a detection method, which are used for improving the detection device.
In order to solve the above technical problem, an aspect of the present invention provides a semiconductor inspection apparatus, including: the wafer bearing device is used for bearing the wafer to be tested; the incident light system is used for emitting incident light to the wafer to be detected, an included angle is formed between the incident light and a first direction, the incident light is reflected by the wafer to be detected to form reflected light, and the first direction is a normal direction perpendicular to the surface of the wafer to be detected; the optical signal sorting system is used for sorting out fundamental wave optical signals from the reflected light; the sensing system is used for receiving the fundamental wave optical signal and acquiring position information according to the fundamental wave optical signal; and the control system is used for receiving the position information and adjusting the height of the wafer bearing device in the first direction according to the position information.
Optionally, the sensing system includes: a first receiving module, configured to receive the fundamental optical signal; and the position signal reading module is used for acquiring the position information according to the received fundamental wave optical signal.
Optionally, the control system includes: a second receiving module, configured to receive the location information.
Optionally, the control system further includes: and the first operation unit is used for calculating and acquiring movement information according to the position information, wherein the movement information comprises a height difference between the height of the wafer to be detected in the first direction and a preset height.
Optionally, the control system further includes: and the first position control unit is used for receiving the movement information and moving the wafer bearing device in the first direction according to the movement information.
Optionally, the control system further includes: and the comparison unit is used for outputting an offset signal when the deviation between the position information and the preset position information exceeds a deviation range.
Optionally, the control system further includes: and the second position control unit is used for moving the wafer bearing device in the first direction according to the offset signal.
Optionally, the control system further includes: and the feedback unit is used for acquiring the movement information of the wafer bearing device and sending incident light control information to the incident light system.
Optionally, the incident light system includes a monitoring unit, configured to obtain incident light information, and feed back the incident light information to the control system, where the incident light information includes a first optical power; the sensing system further comprises: the power reading module is used for acquiring second optical power according to the fundamental wave optical signal and sending the second optical power to the control system; the control system further comprises a second operation unit, which is used for acquiring the linear optical characteristics of the material of the wafer to be detected according to the first optical power and the second optical power.
Optionally, the optical signal sorting system is further configured to sort out a harmonic optical signal from the reflected light; the control system comprises a defect detection unit used for acquiring the defect information of the wafer to be detected according to the harmonic optical signal.
Optionally, the method further includes: and the harmonic signal acquisition system is used for acquiring the harmonic optical signal and transmitting the harmonic optical signal to the defect detection unit.
Optionally, the optical signal sorting system includes a dichroic mirror, and is configured to pass through the fundamental wave optical signal in the reflected light and reflect a harmonic wave optical signal in the reflected light to the harmonic wave signal collecting system, or is configured to pass through the harmonic wave optical signal in the reflected light and reflect the fundamental wave optical signal in the reflected light to the sensing system.
Optionally, the incident light system includes: a light source for emitting an initial incident light; a modulation unit for modulating one or more of light intensity, polarization parameter and focal length of the initial incident light to emit the incident light.
Optionally, the wafer carrying device includes: the bearing disc is used for bearing the wafer to be tested; the fixing device is arranged on the bearing disc and used for fixing the wafer to be detected on the bearing disc; and the mechanical moving assembly is used for driving the bearing disc to move.
Optionally, the fixing device is a vacuum chuck or a buckle fixed on the edge of the bearing plate.
Optionally, the method further includes: and the focusing unit is used for focusing incident light on the surface of the wafer to be detected or in the wafer to be detected.
Optionally, the method further includes: and the optical collimation unit is used for collimating the reflected light and enabling the collimated reflected light to be incident to the optical signal sorting system.
Optionally, the method further includes: and the steering system is used for steering the reflected light and enabling the steered reflected light to be incident to the optical signal sorting system.
Optionally, the sensing system comprises a quadrant photodetector.
Correspondingly, the technical scheme of the invention also provides a detection method adopting the semiconductor detection device, which comprises the following steps: providing a wafer to be tested; emitting incident light to the wafer to be tested, wherein an included angle is formed between the incident light and a first direction, the incident light is reflected by the wafer to be tested to form reflected light, and the first direction is a normal direction perpendicular to the surface of the wafer; acquiring reflected light and sorting out fundamental wave light signals from the reflected light; acquiring the fundamental wave optical signal and acquiring position information according to the fundamental wave optical signal; and adjusting the height of the wafer to be measured in the first direction according to the position information.
Optionally, the method for adjusting the height of the wafer to be measured in the first direction according to the position information includes: acquiring movement information according to the position information, wherein the movement information comprises a height difference between the height of the wafer to be tested in the first direction and a preset height; and moving and adjusting the height of the wafer to be measured in the first direction according to the movement information until the height of the wafer to be measured in the first direction is consistent with the preset height.
Optionally, the method for adjusting the height of the wafer to be measured in the first direction according to the position information includes: providing preset position information and a deviation range; outputting an offset signal when the deviation between the position information and the preset position information exceeds a deviation range; and moving and adjusting the height of the wafer to be measured in the first direction according to the offset signal.
Optionally, the method for adjusting the height of the wafer to be measured in the first direction according to the position information further includes: and after the wafer to be tested finishes moving in the first direction, emitting incident light to the wafer to be tested again.
Optionally, the wafer to be tested includes: the device comprises a substrate and a layer to be measured positioned on the surface of the substrate.
Optionally, the incident light has a first optical power; the detection method further comprises the following steps: acquiring second optical power of the fundamental wave optical signal; and acquiring the linear optical characteristic of the layer to be detected according to the first optical power and the second optical power.
Optionally, the method further includes: sorting out harmonic light signals from the reflected light; and acquiring the defect information of the wafer to be detected according to the harmonic optical signal.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
in the semiconductor detection device provided by the technical scheme of the invention, on one hand, the optical signal sorting system and the sensing system can sort out the fundamental wave optical signal from the reflected light formed by the reflection of the wafer to be detected, and the position information corresponding to the current height of the wafer to be detected can be obtained according to the fundamental wave optical signal, so that the height of the wafer bearing device can be adjusted in the first direction according to the position information through the control system, and the monitoring and the adjustment of the height of the wafer to be detected in the focusing process are realized. On the other hand, the incident light system can emit oblique incident light to the wafer to be measured, that is, an included angle is formed between the incident light and the normal direction perpendicular to the surface of the wafer to be measured, so that reflected light formed by reflection of the wafer to be measured is also oblique, that is, an included angle can be formed between the reflected light and the normal direction perpendicular to the surface of the wafer to be measured, so that the optical signal sorting system can acquire the reflected light at positions other than above the surface of the wafer to be measured, and the optical signal sorting system can sort out the fundamental wave optical signals propagating at positions other than above the surface of the wafer to be measured according to the reflected light. Because the fundamental wave optical signal is transmitted at a position other than the position above the surface of the wafer to be detected, the sensing system can be arranged at a position other than the position above the surface of the wafer to be detected while receiving the fundamental wave optical signal and acquiring the position information according to the fundamental wave optical signal, so that the space above the surface of the wafer to be detected is more abundant. In summary, the semiconductor detection device can monitor and adjust the height of the wafer to be detected, and at the same time, the sensing system for detecting the height of the wafer to be detected can be arranged at a position other than the position above the surface of the wafer to be detected, so that the space above the surface of the wafer to be detected is more abundant, and the semiconductor detection device is improved.
Further, because the first optical power of incident light is obtained through the monitoring unit, and the second optical power of the fundamental wave optical signal is obtained through the power reading module, the linear optical characteristic of the material of the wafer to be detected can be obtained through the control system through the second operation unit according to the first optical power and the second optical power, so that additional information can be provided for detecting the defect of the wafer to be detected through the linear optical characteristic of the material of the wafer to be detected, and the defect detection precision is improved. Meanwhile, the second optical power is obtained according to the fundamental wave optical signal, so that the sensing system can obtain the linear optical characteristic while obtaining the information position according to the same incident light so as to provide the additional information, thereby improving the detection efficiency of defect detection.
Furthermore, the optical signal sorting system is further used for sorting out harmonic optical signals from the reflected light, and the control system is further used for acquiring the defect information of the wafer to be detected according to the harmonic optical signals, so that the semiconductor detection device can monitor and adjust the height of the wafer to be detected according to the same light source, detect the defects of the wafer to be detected, and further improve the detection efficiency of defect detection.
Drawings
Fig. 1 to 5 are schematic structural views of a semiconductor inspection apparatus according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a semiconductor inspection apparatus according to yet another embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a semiconductor inspection apparatus according to another embodiment of the present invention;
fig. 8 is a flowchart illustrating a detection method according to an embodiment of the invention.
Detailed Description
As described in the background, the existing optical defect detection apparatus still remains to be improved.
In one embodiment, an optical defect detecting apparatus is provided, in which a height of a wafer to be measured is detected by disposing a height sensor above a surface of the wafer to be measured, so that a position of the wafer to be measured is adjusted according to the detected height of the wafer to be measured, thereby implementing focus control.
However, the height sensor disposed above the surface of the wafer to be measured occupies a limited space above the surface of the wafer, resulting in a large spatial limitation and a low degree of freedom in the arrangement of components in the optical defect detection apparatus.
In order to solve the above problems, the present invention provides a semiconductor inspection apparatus and an inspection method, comprising: the wafer bearing device is used for bearing the wafer to be tested; the incident light system is used for emitting incident light to the wafer to be detected, an included angle is formed between the incident light and a first direction, the incident light is reflected by the wafer to be detected to form reflected light, and the first direction is a normal direction perpendicular to the surface of the wafer to be detected; the optical signal sorting system is used for sorting out fundamental wave optical signals from the reflected light; the sensing system is used for receiving the fundamental wave optical signal and acquiring position information according to the fundamental wave optical signal; and the control system is used for receiving the position information and adjusting the height of the wafer bearing device in the first direction according to the position information. Thus, an improvement of the semiconductor inspection apparatus is achieved.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 1 to 5 are schematic structural views of a semiconductor inspection apparatus according to an embodiment of the invention.
First, referring to fig. 1, the semiconductor inspection apparatus includes:
the wafer carrying device 100 is used for carrying a wafer 101 to be tested;
an incident light system 200, configured to emit incident light 210 to the wafer 101 to be tested, where an included angle α is formed between the incident light 210 and a first direction Z, where the incident light 210 is reflected by the wafer 101 to be tested to form reflected light 220, and the first direction Z is a normal direction perpendicular to the surface of the wafer 101 to be tested;
an optical signal sorting system 300 for sorting out a fundamental optical signal 310 from the reflected light 220;
a sensing system 400, configured to receive the fundamental light signal 310 and obtain position information according to the fundamental light signal 310;
and a control system 500, configured to receive the position information, and adjust the height of the wafer carrier 100 in the first direction Z according to the position information.
On one hand, the optical signal sorting system 300 and the sensing system 400 can sort the fundamental wave optical signal 310 from the reflected light 220 formed by the reflection of the wafer 101 to be measured, and obtain the position information corresponding to the current height of the wafer 101 to be measured according to the fundamental wave optical signal 310, so that the height of the wafer carrier 100 can be adjusted in the first direction Z according to the position information by the control system 500, thereby monitoring and adjusting the height of the wafer 101 to be measured in the focusing process. On the other hand, the incident light system 200 can emit the incident light 210 to the wafer 101, i.e., the incident light 210 has an angle α with the normal direction perpendicular to the surface of the wafer 101, so the reflected light 220 formed by the reflection of the wafer 101 is also inclined, i.e., the reflected light 220 can have an angle with the normal direction perpendicular to the surface of the wafer, so that the optical signal sorting system 300 can acquire the reflected light 220 at a position other than above the surface of the wafer 101, and the optical signal sorting system 300 can sort out the fundamental light signal 310 propagating at a position other than above the surface of the wafer 101 according to the reflected light 220. Since the fundamental wave optical signal 310 propagates at a position other than the position above the surface of the wafer 101 to be measured, the sensing system 400 can be disposed at a position other than the position above the surface of the wafer 101 to be measured while receiving the fundamental wave optical signal 310 and acquiring the position information according to the fundamental wave optical signal 310, so that the space above the surface of the wafer 101 to be measured is more abundant. In summary, the semiconductor inspection apparatus can monitor and adjust the height of the wafer 101 to be inspected, and the sensing system 400 for detecting the height of the wafer 101 to be inspected can be disposed at a position other than above the surface of the wafer 101 to be inspected, so that the space above the surface of the wafer 101 to be inspected is more abundant, thereby improving the semiconductor inspection apparatus.
The following detailed description will be made in conjunction with the accompanying drawings.
Referring to fig. 1 and 2, the incident light system 200 includes: a light source 201 for emitting an initial incident light 211; the modulation unit 202 is configured to modulate an optical parameter of the initial incident light 211 to emit an incident light 210, where an included angle α is formed between the incident light 210 and the first direction Z. That is, the incident light 210 is inclined with respect to the first direction Z.
In particular, the optical parameter comprises one or more of an optical intensity, a polarization parameter and a focal length.
Specifically, the included angle α is an angle greater than 0 degree and less than 90 degrees. The specific size of the included angle can be adjusted according to the arrangement of the component structure in the semiconductor detection device.
Specifically, in this embodiment, the light source 201 emits an initial incident light 211, and then the modulation unit 202 modulates the optical parameter of the initial incident light 211, so as to emit the incident light 210.
In other embodiments, the incident light system does not include a modulation unit, and the incident light is emitted directly by the light source.
In the present embodiment, the light source 201 includes a laser emitter. The laser transmitter includes a pulse laser or the like.
With continued reference to fig. 1, the semiconductor inspection apparatus further includes: the focusing unit 610 is configured to focus the incident light 210 on the surface of the wafer 101 to be tested or in the wafer 101 to be tested.
Specifically, the wafer 101 to be tested includes: a substrate (not shown), and a layer to be tested (not shown) on the surface of the substrate.
In this embodiment, the layer to be measured is a single-layer structure.
Specifically, the focusing unit 610 focuses the incident light 210 on the surface of the wafer 101 to be measured, and the incident light 210 is reflected by the surface of the wafer to be measured to form the reflected light 220.
In other embodiments, the layer under test is a multilayer structure.
In other embodiments, the layer to be measured has a multilayer structure arranged along the first direction Z, and the layer to be measured has a reflective surface therein. Specifically, incident light is focused in the layer to be measured through a focusing unit, a reflecting surface is arranged in the layer to be measured, and the incident light is reflected by the reflecting surface in the layer to be measured to form reflected light. The reflecting surface comprises an interface between multiple layers of structures in the layer to be tested, or the surfaces of 1 or more structures patterned in the layer to be tested, and the like.
It should be noted that, due to the limitation of the performance limit of the focusing unit 610, the focal depth during focusing is much larger than the thickness of the layer to be measured in the first direction Z, so that the position information obtained by the sensing system 400 can correspond to the current height of the wafer 101 to be measured, no matter the base wave optical signal in the reflected light formed by the incident light passing through the surface of the layer to be measured or the base wave optical signal in the reflected light formed by the incident light passing through the inside of the layer to be measured.
In this embodiment, the layer to be measured is a transparent material.
In other embodiments, the material of the layer to be measured may also include both a transparent material and a non-transparent material, or the material of the layer to be measured is a non-transparent material.
In this embodiment, there is no other semiconductor structure between the substrate and the layer to be tested.
In other embodiments, the wafer to be tested further includes: and one or more of a semiconductor layer, a dielectric layer and an interconnection layer positioned between the substrate and the layer to be tested.
In the present embodiment, the focusing unit 610 includes a focusing lens.
In other embodiments, the focusing unit may also be a curved mirror or the like.
With continued reference to fig. 1, the semiconductor inspection apparatus further includes: an optical collimating unit 620, configured to collimate the reflected light 220 and make the collimated reflected light 220 incident to the optical signal sorting system 300.
The optical alignment unit 620 aligns the reflected light 220, so that the signal accuracy of the reflected light 220 acquired by the optical signal sorting system 300 can be improved, and the height of the current wafer 101 to be measured corresponding to the position information acquired by the sensing system 400 is more accurate.
In this embodiment, the optical collimating unit 620 includes a slow axis collimating mirror and a fast axis collimating mirror.
With continued reference to fig. 1, the optical signal sorting system 300 is further configured to sort out harmonic optical signals 320 from the reflected light 220.
In this embodiment, the control system 500 further includes a defect detection unit 580 (as shown in fig. 5) for acquiring defect information of the wafer 101 to be tested according to the harmonic optical signal 320.
Since the optical signal sorting system 300 is further configured to sort the harmonic optical signal 320 from the reflected light 220, and the control system 500 further includes the defect detection unit 580, which is configured to obtain the defect information of the wafer 101 to be detected according to the harmonic optical signal 320, the semiconductor detection apparatus can detect the defect of the wafer 101 to be detected while monitoring and adjusting the height of the wafer 101 to be detected according to the same light source, thereby improving the detection efficiency of defect detection.
Specifically, in this embodiment, after the reflected light 220 is collimated by the optical collimating unit 620, the optical signal sorting system 300 sorts out the fundamental light signal 310 and the harmonic light signal 320 from the collimated reflected light 220.
The harmonic optical signal 320 includes: is a Frequency-doubled second harmonic signal (Frequency-doubled second harmonic generation signal) of the fundamental optical signal 310.
In this embodiment, the semiconductor inspection apparatus further includes: the harmonic signal collection system 700 is configured to obtain the harmonic optical signal 320 and transmit the harmonic optical signal 320 to the control system 500.
Specifically, in the present embodiment, the optical signal sorting system 300 includes a dichroic mirror for passing the harmonic optical signal 320 in the reflected light 220 and reflecting the fundamental optical signal 310 in the reflected light 220 towards the sensing system 400.
In another embodiment, as shown in fig. 7, the optical signal sorting system 301 includes a dichroic mirror for passing the fundamental light signal 310 in the reflected light 220 and reflecting the harmonic light signal 320 in the reflected light 220 towards the harmonic signal collection system 700.
By selectively using the optical signal sorting system 300 of fig. 1 or the optical signal sorting system 301 in the embodiment shown in fig. 7, the directions of propagation of the sorted fundamental optical signal 310 and harmonic optical signal 320 can be more flexible, and therefore, the flexibility of the positions of the sensing system 400 and the harmonic signal collection system 700 in the semiconductor inspection device is improved, and the flexibility of the structure design of the semiconductor inspection device is improved.
In another embodiment, as shown in fig. 7, the semiconductor inspection apparatus further includes: and a steering system 800 for steering the reflected light 220 and making the steered reflected light 220 incident to the optical signal sorting system 301. By arranging the steering system in the semiconductor detection device, the optical path of the reflected light 220 is more flexibly arranged. Therefore, on the one hand, the position flexibility of the sensing system 400 and the harmonic signal acquisition system 700 in the semiconductor detection device is improved; on the other hand, the structure of the semiconductor detection device can be made more compact, and the semiconductor detection device can be made smaller. In particular, the steering system comprises a plurality of mirrors.
In other embodiments, the optical signal sorting system further includes a polarizer, which is used for increasing the type of defect detection by using the nonlinear optical signal with the preset polarization parameter in the harmonic optical signal, so as to improve the detection sensitivity of the semiconductor detection device while monitoring and adjusting the height of the wafer to be detected and improving the detection efficiency of defect detection.
Referring to fig. 3, the sensing system 400 includes: a first receiving module 410, configured to receive the fundamental optical signal 310; and a position signal reading module 420, configured to obtain position information according to the received fundamental light signal 310.
In this embodiment, the first receiving module 410 includes a signal receiving surface (not shown), the fundamental wave optical signal 310 is received by the signal receiving surface, the position information is a 2-dimensional coordinate in a planar coordinate system, and a plane where the planar coordinate system is located is the signal receiving surface. Through the position information, the current height H of the wafer 101 to be measured in the first direction Z can be corresponded.
Specifically, referring to fig. 1, fig. 3 and fig. 4, fig. 4 shows the wafer 101 to be tested at the height H respectively0Height H1And height H2Meanwhile, the incident light 210, the reflected light 220 and the optical signal propagation diagram of the fundamental wave optical signal 310 are shown, the fundamental wave optical signal 310 is received by the signal receiving surface, and then the position signal reading module 420 reads the position of the centroid of the fundamental wave optical signal 310 on the information receiving surface to obtain the fundamental wave optical signal310 are received by the signal receiving surface, information about the position of the center of mass of the fundamental optical signal 310. That is, the position signal reading module 420 reads the 2-dimensional coordinates of the centroid of the fundamental light signal 310 on the signal receiving surface.
When the wafer 101 to be tested is at different heights H, the height H shown in FIG. 4 is used0Height H1And height H2For example, when the centroid of the fundamental wave optical signal 310 is located at different positions on the signal receiving surface, that is, when the centroid of the fundamental wave optical signal 310 corresponds to different heights H, the 2-dimensional coordinates reflecting the position of the centroid of the fundamental wave optical signal 310 are also different, so that the position information read by the position signal reading module 420 can reflect the height of the wafer 101 to be measured, and thus, the position information can correspond to the current height H of the wafer 101 to be measured in the first direction Z.
In this embodiment, the sensing system 400 includes a quadrant photodetector.
Referring to fig. 1 and 5 in combination, the control system 500 includes: a second receiving module 510, configured to receive the location information.
In this embodiment, the control system 500 further includes: a first operation unit 520, configured to calculate and obtain movement information a according to the position information, where the movement information a includes a height difference between a height H of the wafer 101 to be tested in the first direction Z and a preset height.
Specifically, the control system 500 prestores correspondence information between the position information and the height H, where the correspondence information includes a correspondence model and the like. After obtaining the position information, the first operation unit 520 can perform operation according to the corresponding relationship information to obtain a height difference between a height H of the wafer 101 to be measured in the first direction Z and a preset height, that is, the movement information a.
In this embodiment, the control system 500 further includes: the first position control unit 530 is configured to receive the movement information a, and move the wafer carrier 100 in the first direction Z according to the movement information a, so as to adjust the height of the wafer carrier 100 in the first direction Z, thereby adjusting the height H of the wafer 101 to be measured.
In another embodiment, referring to fig. 6, the control system 500 further includes: a comparing unit 550, configured to output an offset signal when a deviation between the position information and preset position information exceeds a deviation range; a second position control unit 560 for moving the wafer carrier 100 in the first direction Z according to the offset signal.
Specifically, after the control system 500 receives the position information, the comparison unit 550 compares the position information with preset position information, where the preset position information corresponds to a preset height of the wafer 101 to be measured. When the deviation between the position information and the preset position information exceeds a deviation range, the comparing unit 550 outputs an offset signal. The second position control unit 560 controls the wafer carrier 100 to move toward a predetermined height of the wafer to be tested in the first direction Z after receiving the offset signal.
In yet another embodiment, with continued reference to fig. 6, the control system 500 further includes: the feedback unit 570 is configured to obtain the movement information of the wafer carrier 100 and send incident light control information to the incident light system 200.
Specifically, the movement information includes a movement condition of the wafer carrier 100 in the first direction Z, where the movement condition includes: move or stop. When the wafer carrier 100 stops moving toward the preset height of the wafer to be tested, the feedback unit sends incident light control information to the incident light system 200, so that the incident light system 200 emits the incident light 210 again. Therefore, after the wafer carrying device 100 is controlled to move towards the preset height of the wafer to be measured in the first direction Z for several times, the height H of the wafer 101 to be measured is adjusted, so that the wafer 101 to be measured is located at the preset height.
With continuing reference to fig. 2, fig. 3 and fig. 5, the incident light system 200 further includes a monitoring unit 203 for obtaining incident light information according to the incident light 210 and feeding back the incident light information to the control system 500, where the incident light information includes a first optical power; the sensing system 400 further comprises: a power reading module 430, configured to obtain a second optical power according to the fundamental wave optical signal 310, and send the second optical power to the control system 500; the control system 500 further includes a second operation unit 540, configured to obtain a linear optical characteristic of the material of the wafer 101 to be tested according to the first optical power and the second optical power.
Since the first optical power of the incident light 210 is obtained through the monitoring unit 203, and the second optical power of the fundamental optical signal 310 is obtained through the power reading module 430, the control system 400 can obtain the linear optical characteristics of the material of the wafer 101 to be detected through the second operation unit 540 according to the first optical power and the second optical power, so that additional information can be provided for detecting the defect of the wafer 101 to be detected through the linear optical characteristics of the material of the wafer 101 to be detected, and the precision of defect detection is improved. Meanwhile, since the second optical power is obtained according to the fundamental optical signal 310, the sensing system 400 can obtain the linear optical characteristic while obtaining the information position according to the same incident light 210, so as to provide the additional information, thereby improving the detection efficiency of defect detection.
Specifically, in this embodiment, after the control system 500 obtains the first optical power and the second optical power, the linear optical reflectivity of the layer to be measured can be obtained according to a ratio of the second optical power to the first optical power through the second operation unit 540.
In this embodiment, the semiconductor inspection apparatus further includes: and an imaging unit (not shown) for acquiring imaging patterns of different positions on the surface of the wafer 101 to be measured.
In this embodiment, the control system further includes: an imaging operation unit (not shown) configured to obtain plane position information of the wafer 101 to be measured on a reference plane according to imaging patterns at different positions on the surface of the wafer 101 to be measured, where the reference plane is parallel to the surface of the wafer 101 to be measured; a third position control unit (not shown) for moving the wafer carrier 100 along a direction parallel to the reference plane according to the plane position information to achieve alignment of the wafer 101 to be tested in the direction parallel to the reference plane.
Specifically, after the imaging unit obtains the imaging patterns of different positions on the surface of the wafer 101 to be measured, the imaging arithmetic unit can obtain the plane position information of the wafer 101 to be measured on the reference plane through the imaging patterns, and further control the wafer carrying device 100 to move to a desired position to align in a direction parallel to the reference plane.
In this embodiment, the wafer carrying apparatus includes: a susceptor (not shown) for supporting the wafer 101 to be tested; a fixing device (not shown) disposed on the susceptor for fixing the wafer 101 to be tested on the susceptor; and a mechanical moving assembly (not shown) for driving the carrier tray to move. The mechanical movement assembly can move the carrier tray to a designated position according to information provided by the control system 500. Specifically, the fixing device is a vacuum chuck or a buckle fixed on the edge of the bearing plate.
Accordingly, an embodiment of the present invention further provides a testing method using the semiconductor testing apparatus, and with reference to fig. 8, the method includes:
step S1, providing a wafer to be tested;
step S2, emitting incident light to the wafer to be tested, wherein an included angle is formed between the incident light and a first direction, the incident light is reflected by the wafer to be tested to form reflected light, and the first direction is a normal direction perpendicular to the surface of the wafer;
step S3, acquiring reflected light, and sorting out fundamental wave light signals from the reflected light;
step S4, acquiring the fundamental wave light signal and acquiring position information according to the fundamental wave light signal;
step S5, adjusting the height of the wafer to be measured in the first direction according to the position information.
The detailed description will be given with reference to the accompanying drawings.
Referring to fig. 1 and 8, a wafer 101 to be tested is provided.
Specifically, the wafer 101 to be tested includes: a substrate (not shown), and a layer to be tested (not shown) on the surface of the substrate.
In this embodiment, the layer to be measured is a single-layer structure.
In other embodiments, the layer under test is a multilayer structure.
In other embodiments, the layer to be measured has a multilayer structure arranged along the first direction Z, and the layer to be measured has a reflective surface therein.
In this embodiment, the layer to be measured is a transparent material.
In other embodiments, the material of the layer to be measured may also include both a transparent material and a non-transparent material, or the material of the layer to be measured is a non-transparent material.
In this embodiment, there is no other semiconductor structure between the substrate and the layer to be tested.
In other embodiments, the wafer to be tested further includes: and one or more of a semiconductor layer, a dielectric layer and an interconnection layer positioned between the substrate and the layer to be tested.
Referring to fig. 1, fig. 2 and fig. 8, an incident light 210 is emitted to the wafer 101 to be tested, an included angle α is formed between the incident light 210 and the first direction Z, and the incident light 210 is reflected by the wafer 101 to be tested to form a reflected light 220.
Specifically, the included angle α is an angle greater than 0 degree and less than 90 degrees.
In this embodiment, the method for emitting the incident light 210 includes: emitting initial incident light 211; the optical parameters of the initial incident light 211 are modulated to emit incident light 210.
In particular, the optical parameter comprises one or more of an optical intensity, a polarization parameter and a focal length.
In other embodiments, the incident light may also be emitted directly without modulation.
In this embodiment, the detection method further includes: the incident light 210 is focused on the surface of the wafer 101 or inside the wafer 101.
Specifically, in this embodiment, the incident light 210 is focused on the surface of the wafer 101 to be measured, and the incident light 210 is reflected by the surface of the wafer to be measured to form the reflected light 220.
In other embodiments, incident light is focused within the layer under test, the incident light being reflected by a reflective surface within the layer under test to form reflected light.
Referring to fig. 1 and 3, a fundamental light signal 310 is sorted out from the reflected light 220.
In this embodiment, the detection method further includes: a harmonic light signal 320 is sorted out from the reflected light 220.
Specifically, in this embodiment, the method for sorting out the fundamental light signal 310 and the harmonic light signal 320 from the reflected light 220 includes: passes the harmonic optical signal 320 in the reflected light 220 and reflects the fundamental optical signal 310 in the reflected light 220.
In another embodiment, referring to fig. 7, the method for sorting out the fundamental light signal 310 and the harmonic light signal 320 from the reflected light 220 respectively comprises: passes the fundamental optical signal 310 in the reflected light 220 and reflects the harmonic optical signal 320 in the reflected light 220.
The harmonic optical signal 320 includes: is the second harmonic signal multiplied by the fundamental optical signal 310.
In other embodiments, the detection method further comprises: and polarizing the harmonic optical signal to form a nonlinear optical signal with a preset polarization parameter.
In this embodiment, the detection method further includes: the reflected light 220 is collimated before the fundamental light signal 310 is sorted out from the reflected light 220.
Methods of collimating the reflected light 220 include fast axis collimation and slow axis collimation.
In another embodiment, please refer to fig. 7 in combination, the detecting method further includes: the reflected light 220 is diverted.
Please refer to fig. 1, fig. 4, and fig. 5 in combination, the fundamental light signal 310 is obtained, and position information is obtained according to the fundamental light signal 310.
Specifically, in the present embodiment, the position information is a 2-dimensional coordinate of the centroid of the fundamental light signal 310 in the plane coordinate system.
At a height H as shown in FIG. 40Height H1And height H2For example, when the heights H of the wafers 101 to be measured correspond to different heights H, the 2-dimensional coordinates of the centroid position of the reflected fundamental wave optical signal 310 are also different, so that the height H of the wafer 101 to be measured in the first direction Z can be corresponded to through the position information.
Referring to fig. 1 and fig. 5, the height H of the wafer 101 to be measured is adjusted in the first direction Z according to the position information.
In this embodiment, the method for adjusting the height H of the wafer 101 to be measured in the first direction Z according to the position information includes: calculating and acquiring movement information A according to the position information, wherein the movement information A comprises a height difference between a height H of the wafer 101 to be tested in the first direction Z and a preset height; and moving and adjusting the height of the wafer 101 to be measured in the first direction Z according to the movement information A until the height H of the wafer 101 to be measured in the first direction Z is consistent with the preset height. Thus, the height H of the wafer 101 to be measured is adjusted.
Specifically, the corresponding relationship information between the position information and the height H of the wafer 101 to be measured is provided, and the corresponding relationship information includes a corresponding model and the like. After the position information is obtained, operation is performed according to the corresponding relationship information, and a height difference between a height H of the wafer 101 to be measured in the first direction Z and a preset height, that is, the movement information a, is obtained. Then, according to the movement information a, the wafer 101 to be tested is moved in the first direction Z.
In another embodiment, referring to fig. 6, the method for adjusting the height H of the wafer 101 to be measured in the first direction Z according to the position information includes: providing preset position information and a deviation range; outputting an offset signal when the deviation between the position information and the preset position information exceeds a deviation range; and moving and adjusting the height H of the wafer 101 to be measured in the first direction Z according to the offset signal.
In another embodiment, with continuing reference to fig. 6, the method for adjusting the height H of the wafer 101 to be measured in the first direction Z according to the position information further includes: and after the wafer 101 to be tested finishes moving in the first direction Z, emitting incident light to the wafer 101 to be tested again. Therefore, the wafer 101 to be measured reaches the preset height through adjusting the height H of the wafer 101 to be measured for several times.
In this embodiment, the detection method further includes: and acquiring the defect information of the wafer 101 to be tested according to the harmonic optical signal 320.
With continuing reference to fig. 2, fig. 3 and fig. 5, the incident light has a first optical power; the detection method further comprises the following steps: obtaining a second optical power of the fundamental optical signal 310; and acquiring the linear optical characteristic of the layer to be detected according to the first optical power and the second optical power.
Specifically, after the first optical power and the second optical power are obtained, the linear optical reflectivity of the layer to be measured can be obtained according to the ratio of the second optical power to the first optical power.
In this embodiment, the detection method further includes: acquiring imaging patterns of different positions on the surface of the wafer 101 to be detected; acquiring plane position information of the wafer 101 to be detected on a reference plane according to imaging patterns of different positions on the surface of the wafer 101 to be detected, wherein the reference plane is parallel to the surface of the wafer 101 to be detected; and moving the wafer 101 to be measured along the direction parallel to the reference plane according to the plane position information so as to align the wafer 101 to be measured in the direction parallel to the reference plane.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (26)

1. A semiconductor inspection apparatus, comprising:
the wafer bearing device is used for bearing the wafer to be tested;
the incident light system is used for emitting incident light to the wafer to be detected, an included angle is formed between the incident light and a first direction, the incident light is reflected by the wafer to be detected to form reflected light, and the first direction is a normal direction perpendicular to the surface of the wafer to be detected;
the optical signal sorting system is used for sorting out fundamental wave optical signals from the reflected light;
the sensing system is used for receiving the fundamental wave optical signal and acquiring position information according to the fundamental wave optical signal;
and the control system is used for receiving the position information and adjusting the height of the wafer bearing device in the first direction according to the position information.
2. The semiconductor test device of claim 1, wherein the sensing system comprises: a first receiving module, configured to receive the fundamental optical signal; and the position signal reading module is used for acquiring the position information according to the received fundamental wave optical signal.
3. The semiconductor inspection device of claim 2, wherein the control system comprises: a second receiving module, configured to receive the location information.
4. The semiconductor inspection device of claim 3, wherein the control system further comprises: and the first operation unit is used for calculating and acquiring movement information according to the position information, wherein the movement information comprises a height difference between the height of the wafer to be detected in the first direction and a preset height.
5. The semiconductor inspection device of claim 4, wherein the control system further comprises: and the first position control unit is used for receiving the movement information and moving the wafer bearing device in the first direction according to the movement information.
6. The semiconductor inspection device of claim 3, wherein the control system further comprises: and the comparison unit is used for outputting an offset signal when the deviation between the position information and the preset position information exceeds a deviation range.
7. The semiconductor inspection device of claim 6, wherein the control system further comprises: and the second position control unit is used for moving the wafer bearing device in the first direction according to the offset signal.
8. The semiconductor inspection device of claim 7, wherein the control system further comprises: and the feedback unit is used for acquiring the movement information of the wafer bearing device and sending incident light control information to the incident light system.
9. The semiconductor test device of claim 1, wherein the incident light system comprises a monitor unit for obtaining incident light information and feeding back the incident light information to the control system, the incident light information comprising a first optical power; the sensing system further comprises: the power reading module is used for acquiring second optical power according to the fundamental wave optical signal and sending the second optical power to the control system; the control system further comprises a second operation unit, which is used for acquiring the linear optical characteristics of the material of the wafer to be detected according to the first optical power and the second optical power.
10. The semiconductor test device of claim 1, wherein the optical signal sorting system is further configured to sort harmonic optical signals from the reflected light; the control system comprises a defect detection unit used for acquiring the defect information of the wafer to be detected according to the harmonic optical signal.
11. The semiconductor inspection device of claim 10, further comprising: and the harmonic signal acquisition system is used for acquiring the harmonic optical signal and transmitting the harmonic optical signal to the defect detection unit.
12. The semiconductor inspection device according to claim 11, wherein the optical signal sorting system includes a dichroic mirror for passing the fundamental light signal in the reflected light and reflecting a harmonic light signal in the reflected light toward the harmonic signal collection system, or for passing the harmonic light signal in the reflected light and reflecting the fundamental light signal in the reflected light toward the sensing system.
13. The semiconductor inspection device of claim 1, wherein the incident light system comprises: a light source for emitting an initial incident light; a modulation unit for modulating one or more of light intensity, polarization parameter and focal length of the initial incident light to emit the incident light.
14. The semiconductor inspection apparatus of claim 1, wherein the wafer carrier comprises: the bearing disc is used for bearing the wafer to be tested; the fixing device is arranged on the bearing disc and used for fixing the wafer to be detected on the bearing disc; and the mechanical moving assembly is used for driving the bearing disc to move.
15. The semiconductor test device of claim 14, wherein the fixing means is a vacuum chuck or a snap-fit to an edge of the carrier plate.
16. The semiconductor inspection device of claim 1, further comprising: and the focusing unit is used for focusing incident light on the surface of the wafer to be detected or in the wafer to be detected.
17. The semiconductor inspection device of claim 1, further comprising: and the optical collimation unit is used for collimating the reflected light and enabling the collimated reflected light to be incident to the optical signal sorting system.
18. The semiconductor inspection device of claim 1, further comprising: and the steering system is used for steering the reflected light and enabling the steered reflected light to be incident to the optical signal sorting system.
19. The semiconductor detection device of claim 1, wherein the sensing system comprises a quadrant photodetector.
20. A testing method using the semiconductor testing device according to any one of claims 1 to 19, comprising:
providing a wafer to be tested;
emitting incident light to the wafer to be tested, wherein an included angle is formed between the incident light and a first direction, the incident light is reflected by the wafer to be tested to form reflected light, and the first direction is a normal direction perpendicular to the surface of the wafer;
acquiring reflected light and sorting out fundamental wave light signals from the reflected light;
acquiring the fundamental wave optical signal and acquiring position information according to the fundamental wave optical signal;
and adjusting the height of the wafer to be measured in the first direction according to the position information.
21. The inspection method of claim 20, wherein adjusting the height of the wafer to be inspected in the first direction according to the position information comprises: acquiring movement information according to the position information, wherein the movement information comprises a height difference between the height of the wafer to be tested in the first direction and a preset height; and moving and adjusting the height of the wafer to be measured in the first direction according to the movement information until the height of the wafer to be measured in the first direction is consistent with the preset height.
22. The inspection method of claim 20, wherein adjusting the height of the wafer to be inspected in the first direction according to the position information comprises: providing preset position information and a deviation range; outputting an offset signal when the deviation between the position information and the preset position information exceeds a deviation range; and moving and adjusting the height of the wafer to be measured in the first direction according to the offset signal.
23. The inspection method of claim 22, wherein the method of adjusting the height of the wafer to be inspected in the first direction according to the position information further comprises: and after the wafer to be tested finishes moving in the first direction, emitting incident light to the wafer to be tested again.
24. The inspection method of claim 20, wherein the wafer under test comprises: the device comprises a substrate and a layer to be measured positioned on the surface of the substrate.
25. The detection method of claim 24, wherein the incident light has a first optical power; the detection method further comprises the following steps: acquiring second optical power of the fundamental wave optical signal; and acquiring the linear optical characteristic of the layer to be detected according to the first optical power and the second optical power.
26. The detection method of claim 20, further comprising: sorting out harmonic light signals from the reflected light; and acquiring the defect information of the wafer to be detected according to the harmonic optical signal.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113721428A (en) * 2021-07-12 2021-11-30 长鑫存储技术有限公司 Semiconductor processing apparatus

Citations (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1528001A (en) * 1976-03-11 1978-10-11 Kodak Ltd Web defect scanning
JPS62223654A (en) * 1986-03-25 1987-10-01 Kobe Steel Ltd Surface defect detector
JPH0419547A (en) * 1990-04-27 1992-01-23 Toshiba Corp Method for measuring damage of nonlinear optical crystal and damage recovering device
TW538425B (en) * 1997-08-15 2003-06-21 Micro C Technologies Inc Reactor and method of processing a semiconductor substrate
CN1612313A (en) * 2003-10-31 2005-05-04 先进自动器材有限公司 Wire loop height measurement apparatus and method
EP1750172A1 (en) * 2004-05-26 2007-02-07 Nikon Corporation Wavelength converting optical system, laser light source, exposure apparatus, mask examining apparatus, and macromolecular crystal lens machining device
US20080297783A1 (en) * 2007-04-25 2008-12-04 Yuta Urano Defect inspection system and method of the same
CN101506962A (en) * 2007-03-06 2009-08-12 拓普康株式会社 Surface inspecting method and device
CN101657893A (en) * 2007-04-25 2010-02-24 株式会社Snu精密 The foreign matter detection of semiconductor crystal wafer and repair system and method thereof
US20130293895A1 (en) * 2011-05-26 2013-11-07 Fuji Electric Co., Ltd. Light source device, analysis device, and light generation method
CN104949983A (en) * 2014-03-28 2015-09-30 宝山钢铁股份有限公司 Line scanning camera imaging method for object with variable thickness
CN105538812A (en) * 2015-12-11 2016-05-04 深圳大学 High-sensitivity sensing film and surface plasmon resonance sensing detection system
CN106353282A (en) * 2016-08-31 2017-01-25 电子科技大学 Micro-area reflectivity testing system and testing method thereof
US20170320165A1 (en) * 2015-01-28 2017-11-09 Tokyo Seimitsu Co., Ltd. Laser dicing device
CN107768265A (en) * 2017-10-16 2018-03-06 德淮半导体有限公司 Wafer test system and method
CN108122797A (en) * 2016-11-29 2018-06-05 上海微电子装备（集团）股份有限公司 A kind of 3D detection devices
CN109716110A (en) * 2016-09-14 2019-05-03 Asml荷兰有限公司 For checking the irradiation source of equipment, checking equipment and inspection method
CN110132996A (en) * 2019-06-06 2019-08-16 德淮半导体有限公司 Defect detecting device and its detection method
US20200088649A1 (en) * 2018-09-18 2020-03-19 Samsung Electronics Co., Ltd. Method of detecting a defect on a substrate, apparatus for performing the same and method of manufacturing semiconductor device using the same
CN111326433A (en) * 2018-12-17 2020-06-23 紫创(南京)科技有限公司 Semiconductor detection device and detection method
CN111415875A (en) * 2019-07-24 2020-07-14 紫创(南京)科技有限公司 Semiconductor detection device, detection method and semiconductor process device
CN111415876A (en) * 2019-08-23 2020-07-14 紫创(南京)科技有限公司 Semiconductor detection device and detection method
CN111879782A (en) * 2020-06-30 2020-11-03 深圳中科飞测科技有限公司 Detection device and detection method

Patent Citations (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1528001A (en) * 1976-03-11 1978-10-11 Kodak Ltd Web defect scanning
JPS62223654A (en) * 1986-03-25 1987-10-01 Kobe Steel Ltd Surface defect detector
JPH0419547A (en) * 1990-04-27 1992-01-23 Toshiba Corp Method for measuring damage of nonlinear optical crystal and damage recovering device
TW538425B (en) * 1997-08-15 2003-06-21 Micro C Technologies Inc Reactor and method of processing a semiconductor substrate
CN1612313A (en) * 2003-10-31 2005-05-04 先进自动器材有限公司 Wire loop height measurement apparatus and method
EP1750172A1 (en) * 2004-05-26 2007-02-07 Nikon Corporation Wavelength converting optical system, laser light source, exposure apparatus, mask examining apparatus, and macromolecular crystal lens machining device
CN101506962A (en) * 2007-03-06 2009-08-12 拓普康株式会社 Surface inspecting method and device
US20080297783A1 (en) * 2007-04-25 2008-12-04 Yuta Urano Defect inspection system and method of the same
CN101657893A (en) * 2007-04-25 2010-02-24 株式会社Snu精密 The foreign matter detection of semiconductor crystal wafer and repair system and method thereof
US20130293895A1 (en) * 2011-05-26 2013-11-07 Fuji Electric Co., Ltd. Light source device, analysis device, and light generation method
CN104949983A (en) * 2014-03-28 2015-09-30 宝山钢铁股份有限公司 Line scanning camera imaging method for object with variable thickness
US20170320165A1 (en) * 2015-01-28 2017-11-09 Tokyo Seimitsu Co., Ltd. Laser dicing device
CN105538812A (en) * 2015-12-11 2016-05-04 深圳大学 High-sensitivity sensing film and surface plasmon resonance sensing detection system
CN106353282A (en) * 2016-08-31 2017-01-25 电子科技大学 Micro-area reflectivity testing system and testing method thereof
CN109716110A (en) * 2016-09-14 2019-05-03 Asml荷兰有限公司 For checking the irradiation source of equipment, checking equipment and inspection method
CN108122797A (en) * 2016-11-29 2018-06-05 上海微电子装备（集团）股份有限公司 A kind of 3D detection devices
CN107768265A (en) * 2017-10-16 2018-03-06 德淮半导体有限公司 Wafer test system and method
US20200088649A1 (en) * 2018-09-18 2020-03-19 Samsung Electronics Co., Ltd. Method of detecting a defect on a substrate, apparatus for performing the same and method of manufacturing semiconductor device using the same
CN111326433A (en) * 2018-12-17 2020-06-23 紫创(南京)科技有限公司 Semiconductor detection device and detection method
CN110132996A (en) * 2019-06-06 2019-08-16 德淮半导体有限公司 Defect detecting device and its detection method
CN111415875A (en) * 2019-07-24 2020-07-14 紫创(南京)科技有限公司 Semiconductor detection device, detection method and semiconductor process device
CN111415876A (en) * 2019-08-23 2020-07-14 紫创(南京)科技有限公司 Semiconductor detection device and detection method
CN111879782A (en) * 2020-06-30 2020-11-03 深圳中科飞测科技有限公司 Detection device and detection method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113721428A (en) * 2021-07-12 2021-11-30 长鑫存储技术有限公司 Semiconductor processing apparatus
CN113721428B (en) * 2021-07-12 2024-02-06 长鑫存储技术有限公司 Semiconductor processing apparatus

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