CN111326397B - 供电构造和等离子体处理装置 - Google Patents
供电构造和等离子体处理装置 Download PDFInfo
- Publication number
- CN111326397B CN111326397B CN201911273973.1A CN201911273973A CN111326397B CN 111326397 B CN111326397 B CN 111326397B CN 201911273973 A CN201911273973 A CN 201911273973A CN 111326397 B CN111326397 B CN 111326397B
- Authority
- CN
- China
- Prior art keywords
- region
- focus ring
- electrode
- power supply
- connection member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005513 bias potential Methods 0.000 claims abstract description 15
- 238000009826 distribution Methods 0.000 abstract description 17
- 239000000758 substrate Substances 0.000 description 61
- 239000004020 conductor Substances 0.000 description 18
- 230000002093 peripheral effect Effects 0.000 description 17
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000005484 gravity Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018234681A JP6960390B2 (ja) | 2018-12-14 | 2018-12-14 | 給電構造及びプラズマ処理装置 |
| JP2018-234681 | 2018-12-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111326397A CN111326397A (zh) | 2020-06-23 |
| CN111326397B true CN111326397B (zh) | 2024-05-10 |
Family
ID=71072817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911273973.1A Active CN111326397B (zh) | 2018-12-14 | 2019-12-12 | 供电构造和等离子体处理装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10886108B2 (ja) |
| JP (1) | JP6960390B2 (ja) |
| KR (1) | KR20200074027A (ja) |
| CN (1) | CN111326397B (ja) |
| TW (1) | TWI840462B (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11848177B2 (en) * | 2018-02-23 | 2023-12-19 | Lam Research Corporation | Multi-plate electrostatic chucks with ceramic baseplates |
| US11967517B2 (en) | 2019-02-12 | 2024-04-23 | Lam Research Corporation | Electrostatic chuck with ceramic monolithic body |
| JP2022136872A (ja) * | 2021-03-08 | 2022-09-21 | 東京エレクトロン株式会社 | 基板支持器 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102117726A (zh) * | 2009-12-30 | 2011-07-06 | 塔工程有限公司 | 等离子体处理装置的聚焦环及具有聚焦环的等离子体处理装置 |
| CN102592936A (zh) * | 2011-01-07 | 2012-07-18 | 东京毅力科创株式会社 | 聚焦环和具有该聚焦环的基板处理装置 |
| JP2018110216A (ja) * | 2017-01-05 | 2018-07-12 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6284093B1 (en) * | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
| JP4221847B2 (ja) * | 1999-10-25 | 2009-02-12 | パナソニック電工株式会社 | プラズマ処理装置及びプラズマ点灯方法 |
| TW557532B (en) * | 2000-07-25 | 2003-10-11 | Applied Materials Inc | Heated substrate support assembly and method |
| US20040025791A1 (en) * | 2002-08-09 | 2004-02-12 | Applied Materials, Inc. | Etch chamber with dual frequency biasing sources and a single frequency plasma generating source |
| US20060043067A1 (en) * | 2004-08-26 | 2006-03-02 | Lam Research Corporation | Yttria insulator ring for use inside a plasma chamber |
| KR100698614B1 (ko) * | 2005-07-29 | 2007-03-22 | 삼성전자주식회사 | 플라즈마 가속장치 및 그것을 구비하는 플라즈마 처리시스템 |
| JP4884047B2 (ja) | 2006-03-23 | 2012-02-22 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| JP6114698B2 (ja) * | 2011-03-01 | 2017-04-12 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | デュアルロードロック構成内の除害及びストリップ処理チャンバ |
| JP5602282B2 (ja) * | 2013-06-06 | 2014-10-08 | 東京エレクトロン株式会社 | プラズマ処理装置およびフォーカスリングとフォーカスリング部品 |
| JP6284786B2 (ja) * | 2014-02-27 | 2018-02-28 | 東京エレクトロン株式会社 | プラズマ処理装置のクリーニング方法 |
| US10903055B2 (en) * | 2015-04-17 | 2021-01-26 | Applied Materials, Inc. | Edge ring for bevel polymer reduction |
| KR101842124B1 (ko) * | 2016-05-27 | 2018-03-27 | 세메스 주식회사 | 지지 유닛, 기판 처리 장치 및 기판 처리 방법 |
| JP2018006299A (ja) * | 2016-07-08 | 2018-01-11 | 東芝メモリ株式会社 | プラズマ処理装置用処理対象支持台、プラズマ処理装置及びプラズマ処理方法 |
| KR20180033995A (ko) * | 2016-09-27 | 2018-04-04 | 삼성전자주식회사 | 모니터링 유닛, 이를 포함하는 플라즈마 처리 장치 및 그를 이용한 반도체 칩의 제조 방법 |
| JP7063326B2 (ja) * | 2017-03-30 | 2022-05-09 | 住友大阪セメント株式会社 | 複合焼結体、静電チャック部材、静電チャック装置および複合焼結体の製造方法 |
| US20180323042A1 (en) * | 2017-05-02 | 2018-11-08 | Applied Materials, Inc. | Method to modulate the wafer edge sheath in a plasma processing chamber |
| JP7145042B2 (ja) * | 2018-11-08 | 2022-09-30 | 東京エレクトロン株式会社 | 基板支持器及びプラズマ処理装置 |
| JP7145041B2 (ja) * | 2018-11-08 | 2022-09-30 | 東京エレクトロン株式会社 | 基板支持器、プラズマ処理装置、及びフォーカスリング |
-
2018
- 2018-12-14 JP JP2018234681A patent/JP6960390B2/ja active Active
-
2019
- 2019-12-05 TW TW108144418A patent/TWI840462B/zh active
- 2019-12-12 CN CN201911273973.1A patent/CN111326397B/zh active Active
- 2019-12-12 KR KR1020190165199A patent/KR20200074027A/ko not_active Application Discontinuation
- 2019-12-13 US US16/713,972 patent/US10886108B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102117726A (zh) * | 2009-12-30 | 2011-07-06 | 塔工程有限公司 | 等离子体处理装置的聚焦环及具有聚焦环的等离子体处理装置 |
| CN102592936A (zh) * | 2011-01-07 | 2012-07-18 | 东京毅力科创株式会社 | 聚焦环和具有该聚焦环的基板处理装置 |
| JP2018110216A (ja) * | 2017-01-05 | 2018-07-12 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20200194240A1 (en) | 2020-06-18 |
| KR20200074027A (ko) | 2020-06-24 |
| JP2020096136A (ja) | 2020-06-18 |
| TWI840462B (zh) | 2024-05-01 |
| CN111326397A (zh) | 2020-06-23 |
| TW202030758A (zh) | 2020-08-16 |
| JP6960390B2 (ja) | 2021-11-05 |
| US10886108B2 (en) | 2021-01-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102603893B1 (ko) | 플라즈마 처리 장치 | |
| KR102684819B1 (ko) | 플라즈마 처리 장치 | |
| US11456160B2 (en) | Plasma processing apparatus | |
| CN111326397B (zh) | 供电构造和等离子体处理装置 | |
| CN111161991B (zh) | 基片支承器、等离子体处理装置和聚焦环 | |
| JP7145042B2 (ja) | 基板支持器及びプラズマ処理装置 | |
| US20240194457A1 (en) | Substrate support and plasma processing apparatus | |
| US12046457B2 (en) | Electrostatic chuck, focus ring, support base, plasma processing apparatus, and plasma processing method | |
| KR20200140198A (ko) | 정전 척, 지지대 및 플라즈마 처리 장치 | |
| JP2023002987A (ja) | 基板支持器、プラズマ処理装置、及びエッジリング | |
| US11676799B2 (en) | Plasma processing apparatus | |
| TW202306440A (zh) | 電漿處理裝置 | |
| CN117916862A (zh) | 基片支承器和基片处理装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |