CN111313880A - 一种单电源门极边沿可控驱动电路 - Google Patents

一种单电源门极边沿可控驱动电路 Download PDF

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CN111313880A
CN111313880A CN202010143337.3A CN202010143337A CN111313880A CN 111313880 A CN111313880 A CN 111313880A CN 202010143337 A CN202010143337 A CN 202010143337A CN 111313880 A CN111313880 A CN 111313880A
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gate
bridge circuit
power
voltage
unit
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CN111313880B (zh
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张茂强
汪涛
虞晓阳
李乐乐
李汉杰
文继锋
曹冬明
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NR Electric Co Ltd
NR Engineering Co Ltd
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NR Engineering Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)

Abstract

本发明公开了一种单电源门极边沿可控驱动电路。本发明为采用单一电源，利用桥式电路分别给功率器件的门极，和门极参考点(如IGBT的发射极、MOSFET的源极等)施加正电压和零电压，利用两点电压之差实现栅极正、零、负电压的控制，并通过对驱动中桥式电路各开关管的移相和脉冲宽度调制，实现栅极开通和关断边沿不同的正、负、零电压脉冲宽度，达到功率器件开通和关断速度及特性的控制。本发明采用单电源，利用两电平或多电平桥式电路实现驱动电压的电平变化，实现功率器件驱动门极边沿速率和开关特性的控制。

Description

一种单电源门极边沿可控驱动电路
技术领域
本发明涉及一种单电源门极边沿可控驱动电路，属于电力电子功率开关器件驱动技术领域。
背景技术
近年来，IGBT、MOSFET、SiC等门极电压控制型功率开关器件被广泛应用，这些功率开关器件开关时刻的电气特性是其安全运行的前提，对功率开关器件门极边沿可控驱动，优化或改善开关时刻的电气特性，能够显著提升功率开关器件的运行可靠性。
IGBT、MOSFET，特别是一些新型SiC功率开关器件，其开关时间极短，开关速率极快，由于器件、电路中存在寄生电容、电感，开关时刻较高的电压和电流变化率，往往在功率开关器件各个电极之间产生电压、电流震荡，产生对外的EMI干扰，可能导致功率开关器件的过电压损坏，控制保护电路的误动作、误保护，降低了功率开关器件和设备的运行可靠性。除了采用吸收电路降低功率开关器件开关震荡及EMI外，大多应用一般利用驱动门极边沿控制技术对功率开关器件的开关特性进行优化和改善。
传统的驱动方法是利用功率放大电路，将控制信号转换为门极驱动电压。对驱动门极电压边沿的控制多采用分级驱动电阻、多级电压源等方式，这类门极边沿控制方法门极电阻、门极驱动电源电路复杂，无法对门极边沿电压连续控制，针对不同的功率开关器件需要更改硬件电路参数，适应性不高。
中国专利申请号201510222407.3公开一种IGBT驱动门极上升、下降沿电压可调控制电路，该发明即是采用多级正、负电压源电路，实现对IGBT驱动门极上升、下降沿电压的可调控制，控制和电源电路结构复杂，且无法对门极电平进行连续调控。
本发明采用一种单电源门极边沿可控驱动电路，只存在一个驱动电压电源，利用桥式电路输出高频交变电压，在功率开关器件门极电容上等效为连续可调门极电压，实现门极电压边沿的可控调节。
发明内容
为了实现功率开关器件开关时刻门极驱动电压边沿可控，本发明提出了一种单电源门极边沿可控驱动电路，可以简化驱动电源电路，并实现门极电压边沿的可控调节。
具体的方案如下：
一种单电源门极边沿可控驱动电路，实施对象包括单电源供电单元，桥式电路单元，驱动电平控制单元。其特征在于：所述单电源供电单元与桥式电路单元连接，驱动电平控制单元接收功率器件控制信号，生成桥式电路移相或脉冲宽度调制控制信号，桥式电路单元在功率器件开通和关断时段输出门极可变电平脉冲，在导通和关断阶段输出固定电平电压。开通和关断时段，桥式电路单元输出的门极可变电平脉冲信号，通过门极电阻给功率开关器件门极充电和放电，在门极形成等效的连续可调门极电压。导通和关断阶段，桥式电路单元输出固定电平电压，通过门极电阻将功率开关器件的门极电压稳定在固定值。
所述单电源供电单元由直流电源和储能电容组成，直流电源电压为功率器件门极开通推荐电压值，一般为15V，SiC功率开关器件需根据器件特定进行设置。
所述桥式电路单元可为半桥、全桥、三电平或多电平桥式电路，桥式电路中电子开关可为三极管、IGBT、MOSFET等可控开关，一般选择MOSFET器件，为提高控制速度，可选择SiC，GaN等新型功率开关器件。
所述驱动电平控制单元在接收到功率器件控制信号后，根据设定的逻辑在功率器件开通和关断时段输出桥式电路单元的移相或脉冲宽度调制控制信号，使桥式电路输出可变电平门极电压，包含N个开通正脉冲或M个关断负脉冲，其中N和M均大于等于1；在功率器件导通和关断阶段输出固定门极电压。不同功率器件、不同工作状态的门极边沿控制可通过驱动电平控制单元进行设置。驱动电平控制单元可由FPGA、MCU、ARM等控制器实现，也可由逻辑门分立器件进行设计。
本发明的有益效果：
1、本发明可简化驱动电源设计，仅需一个供电电源即可实现功率开关器件的驱动控制；
2、本发明可简化功率开关器件门极边沿控制电路，无需采用多电阻、分级电压进行门极上升、下降沿的控制，以及针对不同功率开关器件需要修改硬件电路参数的需求，仅需驱动电平控制单元和桥式电路单元，即可实现不同功率开关器件开通、关断阶段的速率控制。
附图说明
图1为本发明原理图；
图2为本发明实施例1原理图；
图3为本发明实施例1控制时序逻辑图；
图4为本发明实施例2原理图。
具体实施方式
下面结合附图对本发明作进一步说明。
结合本发明原理图1，以图2具体实施的一种单电源门极边沿可控驱动电路为例进行说明。
单电源供电单元由驱动电源电压V1和直流储能电容C1组成；桥式单元为由可控电子开关K1～K4，及其反并联二极管D1～D4组成的全桥电路；单电源供电单元的电容C1与桥式单元连接，提供电源电能。
桥式单元的输出端A、B通过门极电阻RG连接驱动的功率开关器件S1，S1为IGBT。CG为S1的门极等效电容，并联在S1的G极和E极。
参考图3，本发明一种单电源门极边沿可控驱动电路的控制流程步骤如下：
1驱动电平控制单元接收S1的控制信号，当有开通(或关断)信号时，进入门极边沿调控阶段；
2在门极边沿调控阶段，驱动电平控制单元对桥式电路单元中的K1～K4进行脉冲宽度或移相控制，其中K1和K2的控制信号互补，K3和K4的控制信号互补。
3在S1开通时刻，K1为导通状态，K2为关闭状态，K3和K4进行脉冲宽度调制，在桥式电路单元的输出端A和B之间形成正和零两种电平脉冲，如图3中VAB所示。VAB经门极电阻RG，施加在S1的门极等效电容CG上，CG上的电压上升率得到相应的调控，从而影响S1的开通特性。
4在S1导通阶段，K1、K4为导通状态，K2、K3为关闭状态，桥式电路单元的输出端A和B之间是固定电压，为单电源供电单元的电源电压，同时通过门极电阻RG，将S1的门极等效电容CG上的电压也稳定在此电源电压上。
5在S1关断时刻，K1为关闭状态，K2为开通状态，K3和K4进行脉冲宽度调制，在桥式电路单元的输出端A和B之间形成负和零两种电平脉冲，如图3中VAB所示。VAB经门极电阻RG，施加在S1的门极等效电容CG上，CG上的电压下降率得到相应的调控，从而影响S1的关断特性。
需要说明的是，图2中的实施例为本发明的一种推荐设计方案，其中桥式电路单元可为多种拓扑形式，如图4中的三电平拓扑形式，仍以IGBT为控制对象为例说明，可在桥式电路单元的输出A、B端形成三电平数的电压，具体控制时序逻辑不再赘述。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和变形，这些改进和变形也应视为本发明的保护范围。

Claims (5)

1.一种单电源门极边沿可控驱动电路，包括单电源供电单元，桥式电路单元，驱动电平控制单元，其特征在于：所述单电源供电单元与桥式电路单元连接；驱动电平控制单元接收功率器件控制信号，生成桥式电路单元的移相或脉冲宽度调制控制信号；桥式电路单元的输出端通过门极电阻与功率开关器件的门极连接。
2.如权利要求1所述的一种单电源门极边沿可控驱动电路，其特征在于：所述单电源供电单元由直流电源和储能电容组成，直流电源电压为功率器件门极开通推荐电压值。
3.如权利要求1所述的一种单电源门极边沿可控驱动电路，其特征在于：所述桥式电路单元可为全桥、三电平或多电平桥式电路，桥式电路中电子开关为可控开关。
4.如权利要求1所述的一种单电源门极边沿可控驱动电路，其特征在于：所述驱动电平控制单元在接收到功率器件控制信号后，根据设定的逻辑在功率器件开通和关断时段输出桥式电路单元的移相或脉冲宽度调制控制信号，使桥式电路输出可变电平门极电压，包含N个开通正脉冲或M个关断负脉冲，其中N和M均大于等于1；在功率器件导通和关断阶段输出固定门极电压。
5.如权利要求1所述的一种单电源门极边沿可控驱动电路，其特征在于：不同功率器件、不同工作状态的门极边沿控制通过驱动电平控制单元进行设置。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113541455A (zh) * 2021-06-28 2021-10-22 西安工程大学 一种SiC MOSFET模块连续可调多等级驱动电路

Citations (2)

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Publication number Priority date Publication date Assignee Title
CN103560655A (zh) * 2013-09-27 2014-02-05 株洲变流技术国家工程研究中心有限公司 基于多功率半导体器件并联的驱动器及其系统
JP6214846B1 (ja) * 2016-10-24 2017-10-18 三菱電機株式会社 半導体スイッチのゲート駆動回路

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103560655A (zh) * 2013-09-27 2014-02-05 株洲变流技术国家工程研究中心有限公司 基于多功率半导体器件并联的驱动器及其系统
JP6214846B1 (ja) * 2016-10-24 2017-10-18 三菱電機株式会社 半導体スイッチのゲート駆動回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113541455A (zh) * 2021-06-28 2021-10-22 西安工程大学 一种SiC MOSFET模块连续可调多等级驱动电路

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