CN111312682B - 紧凑型引线框封装件 - Google Patents

紧凑型引线框封装件 Download PDF

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Publication number
CN111312682B
CN111312682B CN201911277569.1A CN201911277569A CN111312682B CN 111312682 B CN111312682 B CN 111312682B CN 201911277569 A CN201911277569 A CN 201911277569A CN 111312682 B CN111312682 B CN 111312682B
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leads
die pad
base portion
die
semiconductor package
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CN201911277569.1A
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CN111312682A (zh
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J·塔利多
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Italian Semiconductor International Co
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STMicroelectronics lnc USA
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Abstract

本公开的实施例涉及紧凑型引线框封装件。总体而言，一个或多个实施例是针对一种引线框封装件，其具有多个引线、裸片焊盘、耦合至裸片焊盘的半导体裸片和包封材料。裸片焊盘的内部部分包括周界部分，周界部分包括彼此间隔开的多个突起。突起帮助将裸片焊盘锁定在包封材料中。多个引线包括上部部分和基底部分。多个引线的基底部分相对于裸片焊盘的多个突起偏移(或交错)。特别地，基底部分朝向裸片焊盘纵向延伸，并且位于相应的突起之间。引线的上部部分包括引线锁，引线锁沿相邻引线的方向延伸超出基底部分。引线锁和裸片焊盘中的突起帮助将引线和裸片焊盘锁定在包封材料中。

Description

紧凑型引线框封装件
技术领域
本公开的实施例涉及半导体封装件及其组装方法。
背景技术
无引线(或没有引线)封装件通常用于其中期望小尺寸封装件的应用。通常，扁平无引线封装件提供由平面引线框形成的近芯片级包封的封装件。位于封装件的底表面上的焊接区(land)提供与板(诸如印刷电路板(PCB))的电连接。许多无引线封装件(诸如方形扁平无引线(QFN)封装件)包括安装至裸片焊盘并诸如通过导电线电耦合至引线的半导体裸片或芯片。包封材料包围半导体裸片和导电线以及部分裸片焊盘和引线。包封材料保护其中的导电元件。
这些封装件的制造商在保持最小规格(诸如，为了防止短路或其他电气故障的封装件中的电部件之间的距离、以及用于将封装件焊接至PCB的合适尺寸的焊接区)的同时面临着减小封装件尺寸的重大挑战。期望可满足最小规格的更小的无引线封装件。
发明内容
总体而言，一个或多个实施例是针对一种引线框封装件，其具有多个引线、裸片焊盘、耦合至裸片焊盘的半导体裸片和包封材料。裸片焊盘的内部部分包括周界部分，周界部分包括彼此间隔开的多个突起。突起帮助将裸片焊盘锁定在包封材料中。多个引线包括上部部分和基底部分。多个引线的基底部分相对于裸片焊盘的多个突起偏移(或交错)。特别地，基底部分朝向裸片焊盘纵向延伸，并且位于相应的突起之间。引线的上部部分包括引线锁，引线锁沿相邻引线的方向延伸超出基底部分。引线锁和裸片焊盘中的突起帮助将引线和裸片焊盘锁定在包封材料中。
附图说明
在附图中，相同的参考标号表示相似的元件。附图中元件的大小和相对位置不需要按比例绘制。
图1A是根据一个实施例的半导体封装件的截面图的示意图。
图1B是图1A的半导体封装件在另一位置处的截面图的示意图。
图1C是图1A的封装件的仰视图。
图2A-图2D是图1的封装件的引线框的各个视图的示意图。
图3A-图3F是示出根据一个实施例的图1A的引线框半导体封装件的制造阶段的截面图。
具体实施方式
在以下描述中，阐述了某些特定细节以提供对所公开的主题的各个方面的透彻理解。然而，可以在没有这些具体细节的情况下实践所公开的主题。在一些情况下，不详细描述半导体处理的已知结构和方法(诸如形成半导体芯片)，以避免混淆本公开的其他方面的描述。
图1A和图1B示出了根据本公开的一个实施例的引线框半导体封装件10的截面图。图1C示出了封装件的底表面以及图1A和图1B的截面线的位置。
封装件10是引线框封装件，其包括裸片焊盘12和位于裸片焊盘12的所有侧的多个引线14。引线14彼此间隔开，并且与裸片焊盘12间隔开。参照图1B，引线14包括上部部分16和基底部分18。如下面将要解释的，上部部分16包括帮助将引线固定在封装件本体(诸如包封材料44)内的锁定特征或锚(引线锁)。
尽管在图1C中在封装件10的每侧示出了八个引线14，但是应当理解，封装件中可以包括任意数目的引线，包括位于裸片焊盘的一侧或多侧上的一个引线。在至少一个实施例中，引线14被设置在裸片焊盘12的相对两侧。裸片焊盘12和引线14由导电材料(诸如金属材料)的引线框形成。在一个实施例中，引线框是铜或铜合金。
参考图1A和图1B，裸片焊盘12具有内部部分20和外部部分22。半导体裸片30通过粘合材料32固定至裸片焊盘12的内部部分20的表面。如本领域已知的，半导体裸片30由半导体材料(诸如硅)制成，并且包括上有源表面，该表面包括电子部件(诸如集成电路)。半导体裸片30可以结合有微机电传感器(MEMS)器件、专用集成电路(ASIC)或任何其他类型的有源结构。粘合材料32可以是被配置为适当地将半导体裸片30固定至裸片焊盘12的任何材料，诸如胶、膏、胶带等。
参照图1B，导电线36将半导体裸片30电耦合至引线14的上部部分16。特别地，导电线36的第一端38被耦合至半导体裸片30的接合焊盘40，并且导电线36的第二端42被耦合至引线14中的相应一个引线的上部部分16。如本领域已知的，导电线36提供半导体裸片30的电路和引线14之间的电通信。
包封材料44位于裸片焊盘12和引线14上，并且围绕半导体裸片30和导电线36。包封材料44填充相邻引线14之间以及引线14和裸片焊盘12之间的空间。包封材料44形成封装件10的底表面以及裸片焊盘12的外部部分22的表面和引线14的基底部分18的表面。引线14的基底部分18的表面形成封装件10的焊接区。包封材料44的上表面形成封装件10的外部上表面。包封材料44的侧面以及引线14的侧面形成封装件10的外部侧面。
包封材料44是绝缘材料，其保护半导体裸片的电部件和导电线不受损害，诸如腐蚀、物理损坏、湿气损坏或其他导致电器件和材料损坏的原因。在一些实施例中，包封材料是模制材料，诸如聚合物、硅酮、树脂、聚酰亚胺或环氧树脂。
参照图1A，裸片焊盘12的内部部分20宽于裸片焊盘12的外部部分22。即，裸片焊盘12的内部部分20的周界延伸超出裸片焊盘12的外部部分22的周界。如下文将更详细解释的，裸片焊盘12的内部部分20的周界用作帮助将裸片焊盘12保持在包封材料44内的锁定特征或锚。
图2A是包括图1A-图1C的封装件10的裸片焊盘12和引线14的引线框50的一部分的俯视图，而图2B是引线框50的一部分的顶部等距视图。图2C是如图2B中的框所示的图2B的引线框50的截面的分解顶部等距视图，而图2D是该框截面的分解底部等距视图。
在所示实施例中，引线框50由具有恒定厚度的引线框形成。因此，引线14的上部部分16的表面与裸片焊盘12的内部部分20的表面共面；并且引线14的基底部分18的表面与裸片焊盘12的外部部分22共面。
如前所述，裸片焊盘12包括内部部分20和外部部分22。从图2D更好地看出，内部部分20具有的周界20a延伸超过外部部分22。特别地，周界部分20a围绕裸片焊盘12的整个周界延伸超过外部部分22。内部部分的周界20a包括多个间隔开的突起20b。包括突起20b的周界部分20a用作帮助将裸片焊盘12保持在包封材料内的锁定特征或锚。即，当包封材料被形成在引线框50周围时，包括突起20b的周界部分20a帮助将裸片焊盘12锚定在包封材料中。
突起20b在它们之间形成凹部。突起20b相对于引线14交错，使得引线14的基底部分18面对在周界部分20a的相邻突起20b之间形成的凹部，这从图2A可以更好地看出。因此，如图2A中的箭头A-A所示，保持引线14和裸片焊盘12之间的最小距离。在一个实施例中，引线14和裸片焊盘12之间的最小距离至少为0.15毫米(mm)。
参考图2D，每个引线14具有：最大厚度T，从上部部分16的顶部延伸到基底部分18的底表面；最大宽度W，在相邻引线14的方向上在上部部分16中延伸；以及长度L，沿引线14的纵向轴线朝向裸片焊盘12在基底部分中延伸。上部部分16的宽度宽于基底部分18的宽度。基底部分18的长度长于上部部分16的长度。
引线14的上部部分16沿其最大宽度W的方向朝向相邻引线横向突出，以形成引线锁16a。即，引线锁16a延伸超过引线14在基底部分18处的侧面，使得引线14的基底部分18在W方向上比上部部分16窄。因此，相邻引线14之间的最小距离由相邻引线锁16a之间的距离来限定。在一个实施例中，相邻引线锁16a之间的最小距离至少为0.15mm。引线锁16a用作帮助将引线14固定在包封材料内的锁定特征或锚。即，当包封材料被形成在引线框50周围时，包封材料包围引线14的上部部分16，以帮助将引线14锚定在包封材料中。
引线14的基底部分18在从引线14朝向裸片焊盘12延伸的纵向方向上具有更大的长度L。较长的基底部分18提供用于在封装件的底表面处形成焊接区的改进表面积。关于这点，用于板级可靠性(BLR)性能的焊点可靠性因此得到提高。由于裸片焊盘12的周界部分20a的相邻突起20b之间的凹部，在不必增加封装件尺寸的情况下提供增加的焊接区。
从图2D可以更好地看出，引线14的基底部分18中的每一个都包括将基底部分18与上部部分16间隔开一定距离的中心部分。即，中心部分将基底部分18与上部部分16分离。在所示的实施例中，每个引线14的上部部分16都具有与裸片焊盘12的周界部分20a(包括突起20b)相同的厚度T。此外，由于上部部分16和基底部分18之间的距离，由于中心部分，裸片焊盘12的周界部分20a也沿厚度T的方向与引线14的基底部分18间隔开。因此，相应引线14与裸片焊盘14之间的最小距离由如图2C中的箭头B-B所示的距离来限定。在至少一个实施例中，引线14与裸片焊盘12(在突起20b处)之间的最小距离至少为0.15mm。
通过使引线14的基底部分18与裸片焊盘12的周界部分20a的突起20b交错，可以减小封装件的尺寸，同时保持引线的适当尺寸的焊接区以用于耦合至另一器件。此外，形成在相邻引线的方向上延伸的引线锁也允许适当尺寸的焊接区。
图3A-图3F示出了制造图1A-图1C的引线框半导体封装件10的各个阶段。如图3A所示，提供引线框条带52的一部分。引线框条带52是导电材料(诸如金属)，并且在一些实施例中由铜或铜合金制成。尽管仅示出一个裸片焊盘和引线集合，但是引线框条带52包括多个裸片焊盘12、引线14和耦合到一起的连接杆或拉杆(tie bar)(未示出)。如本领域已知的，引线框条带52可以包括沿单行布置的裸片焊盘，或者可以包括裸片焊盘的阵列。
引线框条带52包括上表面54和下表面55。在引线框条带52的上表面54上形成图案化层56。图案化层56可以是任何合适的材料，诸如光敏材料，如光阻剂。上表面54上的图案化层56包括开口，在该开口处，引线框条带52的部分将被刻蚀以形成第一凹部58，从而形成引线14的上部部分16、裸片焊盘12的突起20b，并且在上表面处将引线彼此间隔开，并且将引线和裸片焊盘间隔开。特别地，引线框条带52的上表面54在第一刻蚀步骤中被半刻蚀以形成第一凹部58。根据标准半导体处理技术，第一刻蚀步骤可以包括湿法刻蚀、干法刻蚀或它们的组合。第一凹部58可以具有大于从上表面54开始到引线框条带52的厚度的一半的深度。例如，第一凹部58可以在引线框条带的厚度的60％或70％之间延伸。在一个实施例中，凹部58延伸通过引线框条带52的厚度的60％。如图2B所示，从引线框条带52的上表面54移除图案化层56。
类似地，如图3C所示，在引线框条带52的下表面55上形成具有开口57的另一图案化层59，以形成如图3D所示的第二凹部60。开口57与第一凹部58的部分重叠，使得在刻蚀步骤之后形成裸片焊盘12和引线14。特别地，下表面55上的图案化层59包括开口57，在该开口57处，引线框条带52的部分将被刻蚀以形成第二凹部60。特别地，引线框条带52的下表面55在第二刻蚀步骤中被半刻蚀以形成第二凹部60。使用标准半导体处理技术，第二刻蚀步骤可以包括湿法刻蚀、干法刻蚀或它们的组合。第二凹部60延伸超过引线框条带52的厚度的一半，特别地，在厚度的60％或70％之间，更特别地，是厚度的60％。应理解，第一和第二刻蚀步骤共同刻蚀穿过至少引线框条带的整个厚度，使得在第一凹部和第二凹部之间形成通孔。
图案化层59可以是与图案化层56相似的材料，并且在形成凹部60之后被移除。可代替地，图案化层59可以是在形成凹部60之后不被移除的图案化导电层。特别地，诸如通过电镀技术，在引线框条带52的下表面55上沉积图案化导电层。图案化导电层可以包括与引线框条带本身不同的一种或多种导电材料。例如，图案化导电层可以是一种或多种金属材料，诸如Ni/Pd/Ag、Ni/Pd/Au-Ag合金或Ni/Pd/Au/Ag。
如图3E所示，半导体裸片30通过粘合材料32(诸如胶带、膏、胶等)耦合至裸片焊盘12的表面。在将半导体裸片30放置在裸片焊盘12的表面上之前，粘合材料32可以首先被耦合至半导体裸片30、裸片焊盘12或裸片和裸片焊盘二者。
半导体裸片30被电耦合至引线14的相应集合。例如，如本领域已知的，导电线36的第一端38被耦合至半导体裸片30的接合焊盘40，并且导电线36的第二端42被耦合至引线18的表面。尽管仅一个裸片被示出为被耦合至一个裸片焊盘，但是多个半导体裸片可以分别被耦合至引线框条带的多个裸片焊盘。
如图3F所示，包封材料形成在引线框条带52上方，使得包封材料围绕半导体裸片30、导电线36以及裸片焊盘12和引线14的部分。包封材料可以通过常规技术形成，例如通过模制工艺，并且在一些实施例中被硬化，这可能涉及固化步骤。在模制期间，包封材料在模具内流动以填充引线和裸片焊盘之间的空间(第一和第二凹部58和60)，使得引线的基底部分、裸片焊盘和包封材料在封装件的底表面处形成共面表面。如前所述，引线锁16a将引线固定在包封材料中。类似地，包括突起20b的周界部分20a将裸片焊盘12固定在包封材料中。在封装件的底表面处，从包封材料中暴露引线的基底部分18。
制造工艺还包括通过在切割线处切割来将每个封装件分成单独的封装件，这在本领域中是已知的。可以使用任何合适的切割技术(诸如锯切、激光等)分离封装件。例如，可以使用切割穿过包封材料和引线的锯切刀片(blade)来分离封装件。
应理解，制备封装件的方法可以以与所示和所述不同的顺序发生。例如，在上表面处形成第一凹部之前，可以在下表面处形成第二凹部。可代替地，半导体裸片可以在刻蚀引线框条带的下表面之前被附接至上表面。
在一个实施例中，裸片焊盘的上部部分包括从单侧或两侧(诸如两个相对侧)延伸的突起。类似地，引线锁可以从引线上部部分的单侧而不是相对侧延伸。
可以组合上述各种实施例以提供另外的实施例。在本说明书中参考的和/或在申请数据表中列出的所有美国专利、美国专利申请出版物、美国专利申请、外国专利、外国专利申请和非专利出版物全部以其整体通过引用并入本文。如有必要，可以修改实施例的方面，以利用各个专利、申请和出版物的概念来提供进一步的实施例。
根据上面的详细描述，可以对实施例进行这些和其他更改。一般而言，在随附的权利要求中，所使用的术语不应解释为将权利要求限于在本说明书和权利要求中公开的具体实施例，而应解释为包括所有可能的实施例以及这些权利要求被赋予的等同方案的全范围。因此，权利要求不受本公开的限制。

Claims (19)

1.一种半导体封装件，包括：
裸片焊盘，具有内部部分和外部部分，所述内部部分包括内部周界部分，所述外部部分包括外部周界部分，所述内部周界部分延伸超出所述外部周界部分，所述内部周界部分包括多个突起，所述多个突起通过凹部彼此间隔开；
半导体裸片，被耦合至所述裸片焊盘的所述内部部分；
多个引线，每个引线包括上部部分和基底部分，其中所述引线的所述基底部分相对于所述裸片焊盘的所述内部周界部分的所述多个突起交错，使得每个基底部分面对相应的凹部；
多个导电线，所述半导体裸片分别通过所述多个导电线电耦合至所述多个引线；以及
包封材料，位于所述多个引线、所述裸片焊盘、所述半导体裸片和所述多个导电线上方，其中所述裸片焊盘的所述外部部分的表面和所述多个引线的所述基底部分的表面在所述半导体封装件的外表面处暴露，
其中所述多个引线与所述裸片焊盘之间的最小距离在所述多个引线的所述基底部分与所述裸片焊盘的所述内部周界部分之间。
2.根据权利要求1所述的半导体封装件，其中所述多个引线的所述上部部分具有在相邻引线之间延伸的第一宽度，所述多个引线的所述基底部分具有在相邻引线之间延伸的第二宽度，其中所述第二宽度小于所述第一宽度。
3.根据权利要求2所述的半导体封装件，其中所述多个引线的所述上部部分延伸超出所述基底部分的相对侧，形成引线锁，所述引线锁帮助将所述多个引线锁定在所述包封材料中。
4.根据权利要求3所述的半导体封装件，其中所述多个引线的所述上部部分通过中心部分与所述基底部分间隔开，其中所述中心部分在宽度方向上具有与所述上部部分相同的宽度。
5.根据权利要求1所述的半导体封装件，其中所述多个引线的所述基底部分小于所述多个引线的总厚度的50％，其中所述裸片焊盘的所述内部周界部分小于所述裸片焊盘的总厚度的50％。
6.根据权利要求1所述的半导体封装件，其中每个引线和所述裸片焊盘之间的最小距离至少为0.15mm。
7.根据权利要求1所述的半导体封装件，其中所述多个突起从所述裸片焊盘的所述内部周界部分的一部分延伸。
8.根据权利要求1所述的半导体封装件，其中所述多个引线的所述基底部分包括中心部分，所述中心部分将所述上部部分与朝向所述裸片焊盘延伸超出所述上部部分的所述基底部分的表面分离。
9.一种半导体封装件，包括：
裸片焊盘，具有内部部分和外部部分，所述内部部分大于所述外部部分，其中所述内部部分包括沿着所述裸片焊盘的第一侧的多个突起，其中所述多个突起在相邻突起之间形成凹部；
半导体裸片，被耦合至所述裸片焊盘的所述内部部分；
多个引线，面对所述裸片焊盘的所述第一侧，所述多个引线包括上部部分和基底部分，其中所述多个引线的所述基底部分相对于所述裸片焊盘的所述内部部分的所述多个突起交错，其中所述上部部分形成引线锁，所述引线锁在相邻引线的方向上延伸；
多个导电线，所述半导体裸片分别通过所述多个导电线电耦合至所述多个引线；以及
包封材料，位于所述多个引线、所述裸片焊盘、所述半导体裸片和所述多个导电线上方，其中所述裸片焊盘的所述外部部分的表面和所述多个引线的所述基底部分的表面在所述半导体封装件的外表面处暴露，
其中所述多个引线与所述裸片焊盘之间的最小距离在所述多个引线的所述基底部分与所述裸片焊盘的所述内部部分的周界部分之间。
10.根据权利要求9所述的半导体封装件，其中在所述上部部分的相对侧，所述多个引线的所述上部部分延伸超出所述多个引线的所述基底部分。
11.根据权利要求10所述的半导体封装件，其中所述多个引线的所述基底部分面对所述裸片焊盘的所述外部部分，并且相对于相邻突起之间的所述凹部对准。
12.根据权利要求9所述的半导体封装件，其中所述多个引线中的每个引线与所述裸片焊盘之间的最短距离为至少0.15mm。
13.根据权利要求9所述的半导体封装件，其中所述引线锁通过所述多个引线的上部部分形成，所述上部部分具有的宽度大于所述多个引线的所述基底部分的宽度。
14.一种制造半导体封装件的方法，包括：
在引线框的第一表面处形成多个第一凹部；以及
在所述引线框的第二表面处形成多个第二凹部，所述第二表面与所述第一表面相对，所述多个第二凹部与所述多个第一凹部的部分重叠，其中形成所述多个第二凹部形成所述引线框的多个引线和裸片焊盘，其中所述多个引线包括基底部分和上部部分，所述上部部分在所述多个引线的相邻引线之间延伸的方向上延伸超出所述基底部分，所述多个引线的所述基底部分朝向所述裸片焊盘延伸超出所述上部部分，所述裸片焊盘包括多个突起，所述多个突起分别通过凹部彼此间隔开，所述多个引线的所述基底部分面向所述凹部。
15.根据权利要求14所述的方法，包括：将半导体裸片耦合至所述裸片焊盘的内表面。
16.根据权利要求15所述的方法，包括：使用导电元件将所述半导体裸片电耦合至所述多个引线。
17.根据权利要求16所述的方法，包括：在包封材料中包封所述导电元件和所述半导体裸片以及所述多个引线和所述裸片焊盘的一部分，其中所述多个引线的延伸超出所述基底部分的所述上部部分形成引线锁，所述引线锁将所述多个引线锚定在所述包封材料中。
18.根据权利要求17所述的方法，其中所述裸片焊盘的周界的内表面处的所述突起将所述裸片焊盘锚定在所述包封材料中。
19.根据权利要求15所述的方法，其中形成所述多个第一凹部包括刻蚀所述引线框的所述第一表面以形成所述多个第一凹部。
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