CN111312631A - Wafer cleaning device - Google Patents
Wafer cleaning device Download PDFInfo
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- CN111312631A CN111312631A CN202010182586.3A CN202010182586A CN111312631A CN 111312631 A CN111312631 A CN 111312631A CN 202010182586 A CN202010182586 A CN 202010182586A CN 111312631 A CN111312631 A CN 111312631A
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- wafer
- support
- transmission medium
- cleaning apparatus
- ultrasonic transmission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The application discloses wafer cleaning device, this wafer cleaning device includes: a cleaning chamber for containing an ultrasonic transmission medium; the ultrasonic generator is used for providing ultrasonic waves so that the ultrasonic transmission medium vibrates under the action of the ultrasonic waves; and a wafer placement mechanism located within the cleaning chamber for positioning the wafer within the ultrasonic transmission medium. The wafer cleaning device enables the surface of the wafer to be completely contacted with the ultrasonic transmission medium by positioning the wafer in the ultrasonic transmission medium, and enables the ultrasonic transmission medium to vibrate through ultrasonic waves, so that the effect of cleaning the surface of the wafer is achieved, and the surface of the wafer is not damaged while the cleaning efficiency and the cleaning strength are improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer cleaning device.
Background
The increase in memory density of memory devices is closely related to the progress of semiconductor manufacturing processes. As the feature size of semiconductor manufacturing processes becomes smaller, the storage density of memory devices becomes higher. In order to further increase the memory density, a memory device of a three-dimensional structure (i.e., a 3D memory device) has been developed. The 3D memory device includes a plurality of memory cells stacked in a vertical direction, can increase integration in multiples on a unit area of a wafer, and can reduce cost.
The wafer direct bonding technique is a technique for bonding two polished wafers together without using an adhesive. The technology is widely applied to the emerging fields of multifunctional chip integration, microelectronic manufacturing, micro electro mechanical system packaging and the like, and particularly the application in the manufacturing process of a 3D storage chip in recent years greatly promotes the rapid development of the 3D storage device technology.
The wafer bonding technology has extremely high requirements on the cleanliness and the flatness of the wafer surface, so that if the wafer surface cannot be removed when being cleaned or the wafer surface is damaged in the cleaning process, the wafer bonding effect is affected.
Disclosure of Invention
The invention aims to provide an improved wafer cleaning device, which not only enhances the cleaning effect of a wafer, but also can avoid damaging the wafer.
An embodiment of the present invention provides a wafer cleaning device, including: a cleaning chamber for containing an ultrasonic transmission medium; the ultrasonic generator is used for providing ultrasonic waves so that the ultrasonic transmission medium vibrates under the action of the ultrasonic waves; and a wafer placement mechanism located within the cleaning chamber for positioning a wafer within the ultrasonic transmission medium.
Preferably, the wafer placement mechanism is configured to support at least an edge of one wafer.
Preferably, the wafer placing mechanism comprises at least one support part, the at least one support part is sequentially and fixedly connected in the gravity direction, and each support part is used for supporting the edge of a corresponding wafer.
Preferably, each of the support parts includes at least 2 support members, a support surface of each of the support members is for supporting an edge of a corresponding wafer, and the support surface of each of the support members extends in an overall direction at an acute angle to a direction of gravity.
Preferably, the support surface is a cambered surface, a plane surface, a stepped surface, a wavy surface, a serrated surface or an irregular concave-convex surface.
Preferably, the wafer placing mechanism further comprises an adjusting mechanism connected with the wafer placing mechanism and used for adjusting the radius of the circumference enclosed by the supporting parts.
Preferably, each of the support portions includes an arc-shaped support member having a support surface for supporting an edge of the corresponding wafer, and the support surface of each of the arc-shaped support members extends in an overall direction at an acute angle to a direction of gravity.
Preferably, the supporting surface of the arc-shaped supporting member is an arc surface, a plane surface, a step-shaped surface, a wavy surface, a zigzag surface or an irregular concave-convex surface.
Preferably, the ultrasonic transmission medium comprises deionized water or an organic solvent.
Preferably, the method further comprises the following steps: a drying chamber for containing an inert gas; and the wafer bearing mechanism is positioned in the drying chamber.
Preferably, the wafer carrier mechanism comprises a rotatable member for contacting the wafer, the axis of rotation of the rotatable member being perpendicular to the surface of the wafer and passing through the centre/centre of gravity of the wafer.
According to the wafer cleaning device provided by the embodiment of the invention, the wafer is positioned in the ultrasonic transmission medium through the wafer placing mechanism positioned in the cleaning chamber, so that the surface of the wafer can be completely contacted with the ultrasonic transmission medium, and the ultrasonic transmission medium is vibrated through ultrasonic waves, thereby achieving the effect of cleaning the surface of the wafer. Compared with the prior art, the wafer cleaning device can enable the surface of the wafer to be in full and uniform contact with the ultrasonic transmission medium, improves the cleaning efficiency of the surface of the wafer, enhances the dirt removing capacity of the surface of the wafer, and does not damage the surface of the wafer.
Meanwhile, the wafer is positioned in the ultrasonic transmission medium by the wafer placing structure, so that the wafer is prevented from being exposed in the air, and the oxidation of a metal structure on the surface of the wafer is prevented.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings.
Fig. 1a and 1b are schematic structural diagrams of a conventional wafer cleaning apparatus, respectively.
Fig. 2 is a schematic structural diagram of a wafer cleaning apparatus according to an embodiment of the invention.
Fig. 3a is a schematic structural diagram of a wafer placing mechanism according to a first embodiment of the present invention.
Fig. 3b shows a cross-sectional view along line AA in fig. 3 a.
Fig. 4 is a schematic structural diagram illustrating a wafer placing mechanism according to a second embodiment of the present invention.
Detailed Description
The invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by like reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale. In addition, certain well known components may not be shown. For simplicity, the semiconductor structure obtained after several steps can be described in one figure.
It will be understood that when a layer or region is referred to as being "on" or "over" another layer or region in describing the structure of the device, it can be directly on the other layer or region or intervening layers or regions may also be present. And, if the device is turned over, that layer, region, or regions would be "under" or "beneath" another layer, region, or regions.
If for the purpose of describing the situation directly on another layer, another area, the expression "directly on … …" or "on … … and adjacent thereto" will be used herein.
In the present application, the term "semiconductor structure" refers to the general term for the entire semiconductor structure formed in the various steps of manufacturing a memory device, including all layers or regions that have been formed. In the following description, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of the devices are described in order to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details.
The present invention may be embodied in various forms, some examples of which are described below.
Fig. 1a and 1b are schematic structural diagrams of a conventional wafer cleaning apparatus, respectively.
As shown in fig. 1a, the susceptor 110 adsorbs the backside of the wafer 10 to fix the wafer 10. Deionized water (DIW) is delivered to the front side of the wafer 10 through a pipe 120. Ultrasonic waves are emitted by the ultrasonic wave generator 130, and the ultrasonic waves act on the front surface of the wafer 10 through deionized water to remove particles (particles) attached to the front surface of the wafer 10. Finally, the wafer 10 is rotated at a high speed by the high-speed rotation of the susceptor 110, so that the wafer 10 is dried, thereby completing the final cleaning step.
In the process, since the deionized water is transported to the front surface of the wafer 10 through the pipeline 120, the deionized water on the front surface of the wafer 10 is not uniformly distributed, so that the ultrasonic waves have different effects on the front surface of the wafer 10 through the deionized water, and particles on the front surface of the wafer 10 cannot be completely removed. Meanwhile, since the deionized water is only transferred to the front surface of the wafer 10 and the back surface of the wafer 10 does not contact the deionized water, the ultrasonic waves cannot act on the back surface of the wafer 10, and thus the back surface of the wafer 10 cannot be cleaned, which may affect the bonding of the wafer 10. For example, in the process of moving the wafer 10, the wafer 10 often needs to be transferred to a Front Opening Unified Pod (FOUP) for unified transportation. In the wafer box, particles on the back side of the wafer 10 may fall to the front side of the wafer below, or the front side of the wafer 10 may be contaminated again by the particles above, thereby affecting the bonding effect between the wafer and the wafer. In addition, during the process of cleaning the wafer 10, the wafer 10 is exposed to the air for a long time, which accelerates the oxidation process of the metal structure on the wafer 10, resulting in a reduction in the yield of the device. Further, since the wafer 10 is dried by high-speed rotation, there is a risk of slip.
As shown in fig. 1b, the susceptor 210 adsorbs the backside of the wafer 10 to fix the wafer 10. Deionized water is supplied to the junction 240 through the pipe 220, and then gas is supplied to the junction 240 through the high-pressure gas pipe 230 to be ejected to the front surface of the wafer 10 at a high speed. Thereby achieving the effect of removing the particles on the front surface of the wafer 10. Finally, the wafer 10 is rotated at a high speed by the high-speed rotation of the susceptor 210, so that the wafer 10 is dried, and the final cleaning step is completed.
In this process, the impact of the high-pressure water flow can cause serious damage to the front surface of the wafer 10, thereby affecting the bonding effect. In addition, in the solution depicted in fig. 1b, there are also problems that the backside of the wafer 10 cannot be cleaned, that the wafer 10 is exposed to air for a long time to accelerate oxidation of the metal structures on the wafer 10 and that the slip sheet.
Fig. 2 is a schematic structural diagram of a wafer cleaning apparatus according to an embodiment of the invention.
As shown in fig. 2, the wafer cleaning apparatus according to the embodiment of the present invention: a cleaning chamber 310, an ultrasonic generator 320, a wafer placing mechanism 330, a drying chamber 340, a wafer carrying mechanism 350, and an adjusting mechanism (not shown).
The cleaning chamber 310 is used to contain an ultrasonic transmission medium. Wherein, the ultrasonic transmission medium comprises one or a combination of deionized water and organic solvent. In some preferred embodiments, the ultrasound transmission medium comprises a volatile organic solvent, such as ethanol, isopropanol, or the like.
In the embodiment of the present invention, the cleaning chamber 310 has a door, and when the door is opened, the wafer 10 can be put into or taken out of the cleaning chamber 310 from the outside, or the wafer placing mechanism 330 can be put into or taken out of the cleaning chamber 310. In a state where the cleaning chamber 310 cleans the wafer 10, the door is closed so that the cleaning chamber 310 is a closed space.
The ultrasonic generator 320 is used to provide ultrasonic waves. In the present embodiment, the ultrasonic generator 320 is located at one side of the cleaning chamber 310. In some other embodiments, the sonotrode is located at the bottom of the cleaning chamber 310. However, the embodiment of the present invention is not limited thereto, and those skilled in the art may make other arrangements to the position of the ultrasonic generator 320 as necessary to allow the ultrasonic transmission medium in the cleaning chamber 310 to vibrate.
A wafer placement mechanism 330 is located within the cleaning chamber 310 for positioning the wafer 10 within the ultrasonic transmission medium. The wafer placement mechanism 330 is configured to support at least one edge of a wafer. In a state where the cleaning chamber 310 cleans the wafer 10, at least a portion of the wafer placement mechanism 330 is immersed in the ultrasonic transmission medium, wherein the portion of the wafer placement mechanism 330 immersed in the ultrasonic transmission medium is used to support an edge of at least one wafer 10. For example, if the front surface of the wafer 10 is fed toward the gravity direction onto the wafer placing mechanism 330, the wafer placing mechanism 330 supports the edge of the wafer 10, and the front surface of the wafer 10 is ensured to be sufficiently contacted with the ultrasonic transmission medium if the ultrasonic transmission medium is over the portion of the wafer placing mechanism 330 for supporting the edge of the wafer. Further, the liquid level of the ultrasonic transmission medium is increased, so that the back surface of the wafer 10 is sufficiently contacted with the ultrasonic transmission medium. Alternatively, both front and back surfaces of the wafer 10 can be sufficiently cleaned by immersing the respective wafers 10 in the ultrasonic transmission medium at intervals regardless of the orientation of the wafer 10. Because the ultrasonic transmission medium of the embodiment of the invention is accommodated in the cleaning chamber, and the wafer placing structure can position the wafer in the ultrasonic transmission medium, the step of coating the ultrasonic transmission medium on the surface of the wafer in the prior art can be omitted. The specific structure of the wafer placement mechanism 330 will be described in detail later.
The drying chamber 340 is for containing an inert gas. In the embodiment of the present invention, the drying chamber 340 has a door, and when the door is opened, the wafer 10 can be put into or taken out of the drying chamber 340 from the outside. In a state where the drying chamber 340 dries the wafer 10, the door is closed, so that the drying chamber 340 forms a closed space.
The wafer carrier 350 is located in the drying chamber 340, and the wafer carrier 350 is used for adsorbing the back side of the wafer 10 to fix the wafer 10. Wherein the wafer carrier mechanism 350 includes a rotatable member for contacting the wafer 10, the axis of rotation of the rotatable member being perpendicular to the surface of the wafer 10 and passing through the center/center of gravity of the wafer 10.
In the inert gas environment, the wafer loading mechanism 350 drives the wafer 10 to rotate, so as to dry the wafer 10. Compared with the prior art, the drying chamber 340 of the embodiment of the invention is a closed space, and the drying chamber 340 is filled with inert gas, so that the wafer 10 is not contacted with air in the drying process, and the metal structure on the surface of the wafer 10 is prevented from being oxidized. Further, since there is no fear of oxidation of the metal structure, the rotation speed of the rotatable member can be relatively reduced, thereby preventing the slip of the wafer 10.
Fig. 3a is a schematic structural diagram of a wafer placing mechanism according to a first embodiment of the present invention. Fig. 3b shows a cross-sectional view along line AA in fig. 3 a.
As shown in fig. 3a to 3b, the wafer placing mechanism according to the first embodiment of the present invention includes at least one supporting portion 331, the at least one supporting portion 331 is sequentially and fixedly connected in a gravity direction, and each supporting portion 331 is configured to support an edge of a corresponding one of the wafers 10. Wherein each support 331 includes at least 2 supports. Fig. 3a shows a case where each support 331 includes 3 supporting pieces 331a, 331b, 331 c. In some embodiments, the support 331 may be fixed to the bracket 332 in a gravitational direction. The number and shape of the brackets 332 may be set as desired.
In the present embodiment, the supporting surface 301 of each support is used to support the edge of the corresponding wafer 10, and the supporting surface 301 of each support extends entirely along a direction at an acute angle to the direction of gravity. Since the support surface 301 of each support member shown in fig. 3a is a plane, the wafer 10 and the support surface 301 are in a point contact state, and if stable support of the wafer 10 is to be maintained, it is necessary that the contact point between the wafer 10 and the support surface 301 is at least 3 points, and thus 3 support members 331a, 331b, and 331c are required. In this embodiment, since the wafer 10 is in a point contact state with the supporting surface 301, the surface of the wafer 10 except the contact point can be completely exposed to the ultrasonic transmission medium, and the surface of the wafer 10 is in contact with the ultrasonic transmission medium uniformly, thereby increasing the cleaning effect.
In some other embodiments, the support surface 301 may further include one or a combination of a flat surface, a curved surface, a stepped surface, a wavy surface, a serrated surface, or an irregular, concave-convex surface. Since the support surface 301 is no longer only planar, the contact point of the support surface of one support with the wafer may be greater than 1, increasing the stability of the supported wafer 10 and thus reducing the number of supports to two.
In a specific embodiment, the adjusting mechanism can change the radius of the circumference surrounded by the supporting parts by extending the length of the supporting surface 301, adjusting the position of the bracket 332, adjusting the inclination angle α of the supporting surface 301, and the like, as shown in fig. 3 b.
Fig. 4 is a schematic structural diagram illustrating a wafer placing mechanism according to a second embodiment of the present invention.
The wafer placing mechanism according to the second embodiment of the present invention includes at least two supporting portions 331, at least one of the supporting portions 331 is sequentially and fixedly connected in the gravity direction, and each of the supporting portions 331 is configured to support an edge of a corresponding one of the wafers 10. Each support 331 includes an arc-shaped support, and a support surface 301 of the arc-shaped support is attached to the edge of the wafer 10 for supporting the edge of the corresponding wafer 10. The support face 301 of each arc-shaped support member extends as a whole in a direction at an acute angle to the direction of gravity.
The supporting surface 301 of each of the supporting members shown in fig. 4 is a plane, and thus, the wafer 10 is in a dotted line state with the supporting surface 301, so that the surface of the wafer 10 except for the contact line can be completely exposed to the ultrasonic transmission medium, and the surface of the wafer 10 is uniformly contacted with the ultrasonic transmission medium, thereby increasing the cleaning effect.
In some other embodiments, the support surface 301 may further include one or a combination of a flat surface, a curved surface, a stepped surface, a wavy surface, a serrated surface, or an irregular, concave-convex surface, thereby increasing the stability of the supported wafer 10.
In still other embodiments, the wafer placing mechanism 330 may further include a support having at least one groove, wherein the convex portion below the groove (in the gravity direction) is used as a support, and the surface of the groove contacting the wafer is a slanted support surface, as shown in fig. 2. In addition, the wafer can be fixed by clamping the edge of the wafer, so that the surface of the wafer is exposed in the ultrasonic transmission medium.
According to the wafer cleaning device provided by the embodiment of the invention, the part of the wafer placing mechanism used for supporting the edge of the wafer is immersed in the ultrasonic transmission medium, so that the surface of the supported wafer can be completely contacted with the ultrasonic transmission medium, and the ultrasonic transmission medium is vibrated by ultrasonic waves, thereby achieving the effect of cleaning the surface of the wafer. Compared with the prior art, the wafer cleaning device can enable the surface of the wafer to be in full and uniform contact with the ultrasonic transmission medium, improves cleaning efficiency and cleaning strength, and does not damage the surface of the wafer.
Further, the wafer is exposed to the inert gas environment for rotary drying, so that the rotation speed can be reduced, and the risk of slip is reduced.
Furthermore, in the cleaning and drying process of the wafer, the wafer is always in a closed environment, so that the risk of oxidizing metal on the surface of the wafer is reduced.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
The embodiments of the present invention have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. The scope of the invention is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the invention, and these alternatives and modifications are intended to fall within the scope of the invention.
Claims (11)
1. A wafer cleaning apparatus comprising:
a cleaning chamber for containing an ultrasonic transmission medium;
the ultrasonic generator is used for providing ultrasonic waves so that the ultrasonic transmission medium vibrates under the action of the ultrasonic waves; and
and the wafer placing mechanism is positioned in the cleaning chamber and used for positioning the wafer in the ultrasonic transmission medium.
2. The wafer cleaning apparatus of claim 1, wherein the wafer placement mechanism is configured to support at least an edge of one wafer.
3. The wafer cleaning apparatus as claimed in claim 2, wherein the wafer placing mechanism includes at least one support portion, the at least one support portion being sequentially and fixedly connected in a gravity direction, each support portion being configured to support an edge of a corresponding one of the wafers.
4. The wafer cleaning apparatus as claimed in claim 3, wherein each of the support portions includes at least 2 supports, a support surface of each of the supports is for supporting an edge of a corresponding wafer, and the support surface of each of the supports extends in a direction forming an acute angle with a direction of gravity as a whole.
5. The wafer cleaning apparatus of claim 4, wherein the support surface is a cambered surface, a flat surface, a stepped surface, a wavy surface, a serrated surface, or an irregular concave-convex surface.
6. The wafer cleaning apparatus as claimed in claim 4, further comprising an adjusting mechanism connected to the wafer placing mechanism for a radius of a circumference enclosed by the supporting portion.
7. The wafer cleaning apparatus of claim 3, wherein each of the supports comprises an arc-shaped support,
the supporting surfaces of the arc-shaped supporting pieces are used for supporting the edge of the corresponding wafer, and the supporting surface of each arc-shaped supporting piece extends along the direction forming an acute angle with the gravity direction as a whole.
8. The wafer cleaning device of claim 7, wherein the support surface of the arc-shaped support is a cambered surface, a flat surface, a stepped surface, a wavy surface, a serrated surface, or an irregular concave-convex surface.
9. The wafer cleaning apparatus as recited in any one of claims 1-8, wherein the ultrasonic transmission medium comprises deionized water or an organic solvent.
10. The wafer cleaning apparatus as recited in any one of claims 1-8, further comprising:
a drying chamber for containing an inert gas; and
and the wafer bearing mechanism is positioned in the drying chamber.
11. The wafer cleaning apparatus of claim 10, wherein the wafer carrier mechanism includes a rotatable member for contacting a wafer, the rotatable member having an axis of rotation perpendicular to the surface of the wafer and passing through the center/center of gravity of the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010182586.3A CN111312631A (en) | 2020-03-16 | 2020-03-16 | Wafer cleaning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010182586.3A CN111312631A (en) | 2020-03-16 | 2020-03-16 | Wafer cleaning device |
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| Publication Number | Publication Date |
|---|---|
| CN111312631A true CN111312631A (en) | 2020-06-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010182586.3A Pending CN111312631A (en) | 2020-03-16 | 2020-03-16 | Wafer cleaning device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113182265A (en) * | 2020-12-23 | 2021-07-30 | 李厚平 | Cleaning equipment for producing image sensor chip and using method thereof |
| TWI827506B (en) * | 2022-04-28 | 2023-12-21 | 大陸商北京北方華創微電子裝備有限公司 | Load-bearing component and semiconductor process equipment |
-
2020
- 2020-03-16 CN CN202010182586.3A patent/CN111312631A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113182265A (en) * | 2020-12-23 | 2021-07-30 | 李厚平 | Cleaning equipment for producing image sensor chip and using method thereof |
| TWI827506B (en) * | 2022-04-28 | 2023-12-21 | 大陸商北京北方華創微電子裝備有限公司 | Load-bearing component and semiconductor process equipment |
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