CN111300167B - Ultra-precision machining method for thin-wall complex-structure single crystal diamond inertial navigation device - Google Patents
Ultra-precision machining method for thin-wall complex-structure single crystal diamond inertial navigation device Download PDFInfo
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- CN111300167B CN111300167B CN202010155918.9A CN202010155918A CN111300167B CN 111300167 B CN111300167 B CN 111300167B CN 202010155918 A CN202010155918 A CN 202010155918A CN 111300167 B CN111300167 B CN 111300167B
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 2
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- 229910052759 nickel Inorganic materials 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention belongs to the field of ultra-precision machining, and particularly relates to an ultra-precision machining method of a thin-wall complex-structure single crystal diamond inertial navigation device, which comprises the following steps: (1) polishing the two sides of the single crystal diamond; (2) carrying out five-axis linkage picosecond and femtosecond laser composite processing on the shape structure of the inertial navigation device; (3) and immersing the inertial navigation device into the polishing solution to carry out chemical mechanical polishing. Firstly, obtaining a high-precision device substrate by double-sided polishing; secondly, realizing high-precision and high-efficiency processing of a complex structure of a device by picosecond and femtosecond laser composite etching; and finally, carrying out overall chemical mechanical polishing on the etched single crystal diamond inertial navigation device by combining composite energy fields of ultrasound, heating, electromagnetism and the like to finish the ultra-precision machining of the workpiece. The composite processing mode solves the problems of low guidance precision of the traditional silicon and quartz inertial navigation device, difficult processing of the device with the complex structure of the single crystal diamond, large processing surface damage layer and poor overall quality.
Description
Technical Field
The invention belongs to the field of ultra-precision machining, and particularly relates to an ultra-precision machining method of a thin-wall complex-structure single crystal diamond inertial navigation device.
Background
The high-performance inertial navigation device is not influenced by weather and electromagnetic interference, can be used without GPS navigation, is widely applied to the fields of aviation, spaceflight, navigation, deep sea exploration, military and the like, is a research hotspot in the world, and is also a great national demand. The prior inertial navigation device is mainly made of silicon and quartz, the precision of the silicon inertial navigation device is low, and the international guidance precision is 1 degree; the quartz inertial navigation device has high guidance precision which can reach 0.001 degree internationally, but has large volume and cannot be used on miniaturized high-performance devices. The single crystal diamond inertial navigation device has not been reported at home and abroad, so the development of the single crystal diamond inertial navigation device with high precision and small volume to replace silicon with low guidance precision and a quartz inertial navigation device with large volume is significant.
Single crystal diamond has excellent physical properties and stable chemical properties, and is currently the hardest substance known in the world. The diamond plane is usually processed by methods such as mechanical grinding, laser polishing, dynamic friction polishing and the like, the roughness precision of the processed diamond surface is low, and a very thick damaged layer exists; in addition, aiming at the processing of the complex structure on the surface of the thin-wall diamond, at present, few researches are carried out at home and abroad. The chemical mechanical polishing is the most common mode for ultra-low damage processing of the ultra-smooth surface of the existing hard and brittle material, and the etching of the complex structure of the surface of the workpiece can be realized by five-axis linkage picosecond and femtosecond processing, so that the invention combines the chemical mechanical polishing and the laser etching processing to be an effective way for solving the problems of high precision and low damage of the thin-wall hard and brittle complex structure single crystal diamond inertial navigation device.
Disclosure of Invention
The invention provides an inertial navigation device which uses single crystal diamond to replace silicon and quartz materials, and solves the problems of poor surface quality and low guidance precision of the traditional inertial navigation device by combining a chemical mechanical polishing mode and a picosecond and femtosecond laser combined processing mode.
The technical scheme of the invention is as follows:
an ultra-precision processing method of a thin-wall complex structure single crystal diamond inertial navigation device comprises the following steps:
step one, polishing two sides of a single crystal diamond inertial navigation device blank: polishing the two sides of the device substrate by using a double-sided polishing machine, and dripping polishing solution A during polishing to obtain a single crystal diamond inertial navigation device substrate;
secondly, performing five-axis linkage picosecond and femtosecond laser composite processing on the morphology structure of the single crystal diamond inertial navigation device: etching the morphology structure of the single crystal diamond inertial navigation device on the polished single crystal diamond inertial navigation device substrate by adopting five-axis linkage picosecond laser, and further modifying the shape by using femtosecond laser;
step three, immersing the whole single crystal diamond inertial navigation device into polishing solution B for chemical mechanical polishing; immersing the etched single crystal diamond inertial navigation device into polishing solution B integrally, and performing high-efficiency ultralow-damage chemical mechanical polishing on the single crystal diamond inertial navigation device by combining ultrasonic, heating, electromagnetic and other composite energy fields;
step four, cleaning and packaging: and putting the polished single crystal diamond inertial navigation device into acetone or alcohol for ultrasonic cleaning, then drying, and packaging and storing by using a vacuum bag.
Further, the polishing solution A in the first step comprises abrasive particles and a chemical auxiliary reagent, wherein the abrasive particles are one or two of zirconia, diamond or boron carbide, the particle size is 1-5 μm, and the content is 80-120 g/L; the chemical auxiliary reagent comprises: one or more than two of chloric acid, sodium persulfate and hydrogen peroxide are mixed, and the content is 30-80 g/L; one or two of ursolic acid and lactic acid are mixed, and the content is 60-120 g/L; the balance of deionized water.
Further, the polishing solution B in the second step comprises abrasive particles and a chemical auxiliary reagent, wherein the abrasive particles are one, two or three of iron, cobalt, nickel, cerium oxide and silicon carbide, the particle size is 50-150 μm, and the content is 500-700 g/L; the chemical auxiliary reagent comprises: one or two of iodine tincture and hydrogen peroxide are mixed, and the content is 40-60 g/L; one or more than two of oxalic acid, tannic acid and lactic acid are mixed, and the content is 80-130 g/L; the rest is one or more than two of deionized water, kerosene and water-based emulsion.
The invention has the beneficial effects that: the invention can improve the guidance precision of the inertial navigation system by manufacturing the single crystal diamond inertial navigation device to replace the silicon and quartz inertial navigation device, adopts a method of double-sided polishing device matrix, compositely processing the device morphology structure by picosecond and femtosecond laser, and finally immersing the device morphology structure into polishing solution to carry out integral polishing, thereby not only realizing the rapid molding of the complex structure of the thin-wall single crystal diamond inertial navigation device, but also ensuring the smoothness and ultra-low damage of the integral surface of the device.
Drawings
FIG. 1 is a super-precision processing flow and schematic diagram of a single-diamond inertial navigation device according to the present invention.
In the figure: 1, double-sided polishing; 2, a single crystal diamond inertial navigation device; 3, polishing solution A; 4 picosecond laser; 5, polishing solution B; 6, an ultrasonic device; 7 an electromagnetic device; 8, a heating device; 2-1 inertial navigation device morphology structure.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
As shown in figure 1, the ultra-precision machining method of the thin-wall complex-structure single crystal diamond inertial navigation device comprises the following steps:
step one, a double-side polishing machine 1 is used for double-side polishing of the single crystal diamond inertial navigation device 2 (blank at the moment), and during polishing, polishing solution A3 is dripped; in the example, the formula of the polishing solution A3 adopts a zirconium oxide abrasive with the particle size of 5 μm and the content of 95g/L, sodium persulfate with the content of 55g/L, ursolic acid with the content of 85g/L and the balance of deionized water;
etching a morphology structure 2-1 of the inertial navigation device on a polished substrate of the single crystal diamond inertial navigation device 2 by adopting five-axis linkage picosecond laser 4, and further modifying the shape by using the femtosecond laser 4;
step three, immersing the etched single crystal diamond inertial navigation device 2 into polishing solution B5 integrally, and performing high-efficiency ultralow-damage chemical mechanical polishing on the single crystal diamond inertial navigation device by combining with composite energy fields of an ultrasonic device 6, an electromagnetic device 7, a heating device 8 and the like; in the formula of the polishing solution B5, iron-nickel mixed abrasive with the particle size of 150 mu m and the content of 650g/L, iodine with the content of 45g/L, oxalic acid and tannic acid composite solution with the total content of 115g/L (equal concentration ratio of two reagents), and the balance of deionized water, kerosene and water-based emulsion mixed solution with equal concentration ratio are selected;
and step four, putting the polished single crystal diamond inertial navigation device 2 into acetone or alcohol for ultrasonic cleaning, then drying, and packaging and storing by using a vacuum bag.
The invention has the advantages that:
1. the single crystal diamond is used for replacing the traditional inertial navigation device materials of silicon and quartz, the inertial navigation device made of the materials has higher guidance precision relative to the inertial navigation device made of the silicon materials, and the inertial navigation device with smaller volume can be manufactured relative to the quartz materials;
2. compared with the traditional mechanical grinding or simple etching processing, the composite superfinishing process of 'double-sided chemical mechanical polishing-picosecond and femtosecond laser composite etching-immersion type integral chemical mechanical polishing' has the effects of good integral polishing quality and low surface damage layer;
3. the polishing solution provided by the invention uses weak acid as a corrosive agent or a PH regulator to replace a sodium hydroxide strong base reagent adopted in the traditional polishing of the single crystal diamond, and has small environmental pollution.
Claims (3)
1. An ultra-precision processing method of a thin-wall complex-structure single crystal diamond inertial navigation device is characterized by comprising the following steps:
step one, polishing two sides of a single crystal diamond inertial navigation device blank: polishing the two sides of the device substrate by using a double-sided polishing machine, and dripping polishing solution A during polishing to obtain a single crystal diamond inertial navigation device substrate;
secondly, performing five-axis linkage picosecond and femtosecond laser composite processing on the morphology structure of the single crystal diamond inertial navigation device: etching the morphology structure of the single crystal diamond inertial navigation device on the polished single crystal diamond inertial navigation device substrate by adopting five-axis linkage picosecond laser, and further modifying the shape by using femtosecond laser;
step three, immersing the whole inertial navigation device into polishing solution B for chemical mechanical polishing: immersing the etched single crystal diamond inertial navigation device into polishing solution B integrally, and carrying out chemical mechanical polishing on the single crystal diamond inertial navigation device by combining ultrasonic, heating and electromagnetic modes;
step four, cleaning and packaging: and putting the polished single crystal diamond inertial navigation device into acetone or alcohol for ultrasonic cleaning, then drying, and packaging and storing by using a vacuum bag.
2. The ultra-precision machining method for the thin-wall complex-structure single-crystal diamond inertial navigation device according to claim 1, wherein the polishing solution A in the first step comprises abrasive particles and a chemical auxiliary reagent, the abrasive particles are one or two of zirconia, diamond and boron carbide, the particle size is 1-5 μm, and the content is 80-120 g/L; the chemical auxiliary reagent comprises: one or more than two of chloric acid, sodium persulfate and hydrogen peroxide are mixed, and the content is 30-80 g/L; one or two of ursolic acid and lactic acid are mixed, and the content is 60-120 g/L; the balance of deionized water.
3. The ultra-precision machining method for the thin-wall complex-structure single-crystal diamond inertial navigation device according to claim 1 or 2, characterized in that the polishing solution B in the third step comprises abrasive particles and chemical auxiliary reagents, wherein the abrasive particles are one, two or three of iron, cobalt, nickel, cerium oxide and silicon carbide, the particle size is 50-150 μm, and the content is 500-700 g/L; the chemical auxiliary reagent comprises: one or two of iodine tincture and hydrogen peroxide are mixed, the content is 40-60g/L, and one or more of oxalic acid, tannic acid and lactic acid are mixed, the content is 80-130 g/L; the rest is one or more than two of deionized water, kerosene and water-based emulsion.
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