CN111267247A - Crystal bar slicing device - Google Patents
Crystal bar slicing device Download PDFInfo
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- CN111267247A CN111267247A CN201811477368.1A CN201811477368A CN111267247A CN 111267247 A CN111267247 A CN 111267247A CN 201811477368 A CN201811477368 A CN 201811477368A CN 111267247 A CN111267247 A CN 111267247A
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- crystal bar
- cathode
- wire electrode
- electrode
- ingot
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
- B28D7/005—Devices for the automatic drive or the program control of the machines
Abstract
The invention provides a crystal bar slicing device, which comprises: a power source; an electrolytic cell for storing an electrolyte; the anode comprises a crystal bar supporting device and a crystal bar, and the crystal bar supporting device is electrically connected with the power supply and the crystal bar respectively; the cathode is accommodated in the electrolytic cell and is electrically connected with the power supply, the cathode comprises at least one linear electrode, the length direction of the linear electrode is crossed with the axial direction of the crystal bar, the linear electrode is not contacted with the crystal bar, and crystal bar slicing is realized through the relative motion between the linear electrode and the crystal bar when the power supply is connected between the anode and the cathode; wherein the cathode further comprises a linear electrode supporting device for controlling the linear electrode to move along the length direction of the linear electrode. The crystal bar slicing device can remove the hydrogen separated from the linear electrode of the cathode in time.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a crystal bar slicing device.
Background
At present, the cutting of crystal bars is mainly mechanical linear cutting performed by slurry driven by steel wires. The principle is that a steel wire moving at a high speed drives cutting edge materials attached to the steel wire to rub the silicon rod, so that the cutting effect is achieved. Since a steel wire is used in the wire cutting process, contaminants such as Cu, Fe, etc. are easily introduced. Meanwhile, the linear cutting process is adopted to cut the crystal bar, so that the kerf loss cannot be avoided.
An improved crystal bar cutting method is to adopt an electrolytic method to carry out electrochemical cutting on the crystal bar. By disposing the ingot and the wire electrode on the anode and the cathode of the electrolytic apparatus containing the electrolyte, respectively, in the case where a direct current power is applied between the cathode and the anode, the wire electrode electrochemically reacts with a portion of the ingot corresponding to the wire electrode, so that the ingot is cut. In the process, the electrochemical reaction of hydrogen evolution occurs on the cathode arranged as the linear electrode, however, the precipitated hydrogen is often adsorbed on the linear electrode, so that the surface reaction activity of the linear electrode is reduced, the electrochemical reaction efficiency of the subsequent crystal bar cutting is reduced, even cannot be carried out, and the efficiency and the quality of the crystal bar cutting are influenced.
Therefore, a new ingot slicing apparatus is needed to solve the problems of the prior art.
Disclosure of Invention
In this summary, concepts in a simplified form are introduced that are further described in the detailed description. This summary of the invention is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
The invention provides a crystal bar slicing device, which comprises:
a power source;
an electrolytic cell for storing an electrolyte;
the anode comprises a crystal bar supporting device and a crystal bar, and the crystal bar supporting device is electrically connected with the power supply and the crystal bar respectively;
the cathode is accommodated in the electrolytic cell and is electrically connected with the power supply, the cathode comprises at least one linear electrode, the length direction of the linear electrode is crossed with the axial direction of the crystal bar, the linear electrode is not contacted with the crystal bar, and crystal bar slicing is realized through the relative motion between the linear electrode and the crystal bar when the power supply is connected between the anode and the cathode; wherein the content of the first and second substances,
the cathode further comprises a wire electrode support device for controlling the wire electrode to move along the length direction of the wire electrode.
Illustratively, the wire electrode support device further controls the wire electrode to move along the axial direction of the crystal bar and/or the radial direction of the crystal bar.
Illustratively, the linear electrode supporting device comprises at least two guide rollers, and the guide rollers rotate to drive the linear electrode to move along the length direction of the linear electrode.
Illustratively, the guide rollers are provided with wire grooves, and the distance between adjacent wire grooves is set as the thickness of the wafer formed by slicing the crystal bar.
Illustratively, the distance between adjacent ones of the wire slots ranges from 100 μm to 1500 μm.
Illustratively, the material of the guide roller includes graphite, carbon-coated metallic material, and conductive ceramic.
Illustratively, the device also comprises a pH control device for controlling the pH value in the electrolytic cell.
Illustratively, the device further comprises a temperature control device for controlling the temperature of the cathode, the anode and the electrolyte.
Illustratively, the device also comprises a hydrogen collecting device for collecting hydrogen generated by the electrochemical reaction on the cathode.
Illustratively, an electrolyte circulation system is further included to circulate and replenish the electrolyte in the electrolytic cell.
According to the crystal bar slicing device, the linear electrode supporting device capable of supporting the linear electrode to move along the length direction of the linear electrode is arranged on the cathode, so that hydrogen separated out from the linear electrode of the cathode is removed in time in the process of electrochemically cutting the crystal bar by the wafer, the hydrogen is prevented from being adsorbed on the linear electrode to influence the efficiency of cathode electrochemical reaction, and the efficiency and the quality of crystal bar cutting are ensured.
Drawings
The following drawings of the invention are included to provide a further understanding of the invention. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
In the drawings:
fig. 1 is a schematic structural view of a crystal bar slicing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic front view of the ingot support apparatus of FIG. 1 supporting a wafer disposed opposite a wire electrode
FIGS. 3A and 3B are schematic sectional views of the ingot supporting apparatus of FIG. 1 taken along the A-A direction and the B-B direction, respectively.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the invention.
In the following description, a detailed description will be given to illustrate the ingot slicing apparatus according to the present invention in order to thoroughly understand the present invention. It will be apparent that the invention may be practiced without limitation to specific details that are within the skill of one of ordinary skill in the semiconductor arts. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.
It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular is intended to include the plural unless the context clearly dictates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Exemplary embodiments according to the present invention will now be described in more detail with reference to the accompanying drawings. These exemplary embodiments may, however, be embodied in many different forms and should not be construed as limited to only the embodiments set forth herein. It is to be understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of these exemplary embodiments to those skilled in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity, and the same elements are denoted by the same reference numerals, and thus the description thereof will be omitted.
In order to solve the technical problems in the prior art, the invention provides a crystal bar slicing device, which comprises:
a power source;
an electrolytic cell for storing an electrolyte;
the anode comprises a crystal bar supporting device and a crystal bar, and the crystal bar supporting device is electrically connected with the power supply and the crystal bar respectively;
the cathode is accommodated in the electrolytic cell and is electrically connected with the power supply, the cathode comprises at least one linear electrode, the length direction of the linear electrode is crossed with the axial direction of the crystal bar, the linear electrode is not contacted with the crystal bar, and crystal bar slicing is realized through the relative motion between the linear electrode and the crystal bar when the power supply is connected between the anode and the cathode; wherein the content of the first and second substances,
the cathode further comprises a wire electrode support device for controlling the wire electrode to move along the length direction of the wire electrode.
Referring to fig. 1, fig. 2, and fig. 3A and fig. 3B, a crystal bar slicing apparatus according to the present invention is exemplarily illustrated, and fig. 1 is a schematic structural view of a crystal bar slicing apparatus according to an embodiment of the present invention; fig. 2 is a schematic front view of the ingot supporting apparatus of fig. 1 supporting a wafer disposed opposite to a linear electrode, and fig. 3A and 3B are schematic sectional views of the ingot supporting apparatus of fig. 1 taken along a-a direction and a B-B direction, respectively.
First, referring to fig. 1, an ingot slicing apparatus according to an embodiment of the present invention includes a power supply 100, an electrolytic cell 200, and an anode and a cathode connected to a positive electrode and a negative electrode of the power supply 100, respectively.
The power supply 100 may be any device capable of providing a dc voltage or current, such as an ac power supply and an ac-to-dc device, which cooperate to provide a dc voltage or current, a dc power supply, etc., and is not limited herein.
The electrolytic cell 200 includes an electrolyte 201 therein for reacting with the silicon ingot under the influence of a dc power source.
The anode comprises a crystal bar 300 and a crystal bar supporting device 301 for supporting the crystal bar 300, wherein the crystal bar supporting device 301 is electrically connected with the power supply 100 and the crystal bar 300 respectively.
The cathode is housed within the electrolytic cell 200 and includes at least one wire electrode 400. The linear electrode 400 is provided so that the longitudinal direction thereof intersects the axial direction of the ingot 300, and the linear electrode 400 does not contact the ingot 300.
Illustratively, the material of the wire-like electrode 400 may be any non-metallic conductive material. Specifically, the material of the wire-like electrode 400 may be carbon fiber, carbon-coated metal wire, or the like. Illustratively, the wire-like electrode has a diameter in the range of 50-150 μm.
Illustratively, the electrolyte 201 includes a solution comprising hydrofluoric acid. The linear electrode 400 is provided so that the longitudinal direction of the linear electrode 400 intersects the axial direction of the ingot 300, and the linear electrode 400 does not contact the ingot 300, and when a voltage or a current is applied between the cathode and the anode by the power supply 100, the linear electrode 400 electrochemically reacts with a portion of the ingot 300 provided to the linear electrode 400. Wherein, the crystal bar positioned on the anode has the following electrochemical reaction:
Si→Si4++4e
Si4++4OH-→Si(OH)4
Si(OH)4+HF→H2SiF6+H2O
the following electrochemical reactions take place on the cathode wire electrode:
2H++2e→H2
in one embodiment according to the present invention, a solution containing hydrofluoric acid and acetic acid is used as the electrolyte, wherein the volume fraction of hydrofluoric acid is in the range of 1% -10% and the volume fraction of acetic acid is in the range of 0-30%.
Illustratively, the angle between the lengthwise direction of the boule 300 and the lengthwise direction of the wire electrode 400 ranges from 89.5 ° to 90.5 °. In this angular range, the axial direction of the ingot 300 is perpendicular to the extending direction of the linear electrode 400, so that slicing is performed along the radial direction of the ingot 300, and the sliced wafer meets the requirements of the semiconductor manufacturing process for the wafer.
Referring to fig. 2, there is shown a schematic front view of the arrangement of the ingot support apparatus of fig. 1 supporting a wafer relative to a wire electrode, wherein the wire electrode 400 is contained in the electrolyte 201 of the electrolytic cell 200, the wire electrode 400 is arranged perpendicularly relative to the axial direction of the ingot 300, and the wire electrode 400 is not in contact with the ingot 300. Under the arrangement of the power supply, the electrolytic cell, the cathode and the anode, the crystal bar 300 is positioned between the crystal bar supporting device 301 and the linear electrode 400 of the cathode, and the slicing of the crystal bar 300 is realized through the relative movement between the linear electrode 400 and the crystal bar 300. Compared with a mechanical cutting method adopting a cutting line, the method has the advantages that the kerf loss in the crystal bar cutting process is effectively reduced by adopting an electrochemical method for cutting the crystal bar, meanwhile, the non-contact cutting is realized by adopting the electrochemical method for cutting the crystal bar, and the pollution caused by mechanical damage, wafer warping and contact cutting is effectively avoided. Meanwhile, the wafer after electrochemical cutting is adopted, further chemical etching and other treatment are not needed, and the treatment flow of the wafer after cutting is greatly simplified.
Illustratively, as shown in FIG. 1, the cathode further comprisesA wire electrode support 401 for controlling the movement of the wire electrode 400 along the longitudinal direction thereof. Since H is precipitated on the cathode in the above electrochemical reaction2，H2The material is often adsorbed on the linear electrode 400, so that the surface reactivity of the linear electrode 400 is reduced, the subsequent electrochemical reaction efficiency is influenced, and the slicing rate and the slicing quality of the crystal bar are further influenced. For this purpose, the wire electrode 400 is supported by a wire electrode support 401 to move in the longitudinal direction so that H adsorbed on the surface of the wire electrode 4002The hydrogen is desorbed with the movement of the wire electrode while leaving no H adsorbed on the wire electrode 4002The part of the crystal is moved to the lower part of the crystal bar for further electrochemical cutting, thereby effectively solving the problem of H2The adsorption on the surface of the linear electrode brings influence on electrochemical cutting.
Illustratively, the wire-like electrode supporting means includes at least two guide rollers. As shown in fig. 1, the wire electrode support 401 is provided as two guide rollers, and the guide rollers move the wire electrode 400 in the longitudinal direction by the rotation of the guide rollers. The wire electrode supporting means 401 is arranged so that the guide rollers support the wire electrode 400 to keep the wire electrode 400 in a tensioned state, and the wire electrode 400 is moved in the longitudinal direction by the rotation of the guide rollers, and the wire electrode is moved through the guide rollers while contacting the guide rollers to cause the H adsorbed on the wire electrode to be attracted to the guide rollers2Complete desorption of H2The desorption efficiency is high.
Referring to fig. 3, there is shown a schematic front view of the arrangement of the ingot support apparatus of fig. 2 supporting the wafer relative to the wire electrode and the wire electrode support apparatus, wherein the wire electrode 400 is accommodated in the electrolyte 201 of the electrolytic cell 200, the extending direction of the wire electrode 400 is arranged perpendicular to the axial direction of the ingot 300, and the wire electrode 400 is not in contact with the ingot 300. The wire electrode support 401, configured as a guide roller, rotates in the direction indicated by the arrows C-C, driving the wire electrode 400 to move along the direction of its length extension, thereby causing H adsorbed on its surface during the electrochemical reaction2And (4) desorbing. Illustratively, the material of the guide roller includes graphite, carbon-coated metallic material, and conductive ceramic. In the present embodimentAnd the guide roller is made of graphite. Illustratively, the linear speed range of the guide roller driving the linear electrode to rotate is 0-10 mm/s.
It should be understood that the present embodiment is only exemplary in that the wire electrode supporting device is provided as the guide roller, and any wire electrode supporting device that can move the wire electrode in the longitudinal direction is applicable to the present invention. It should be understood that the linear electrode is not limited to two guide rollers in the drawings of the present embodiment, and those skilled in the art can implement the present invention by arranging the linear electrode to two, three or more guide rollers to move the linear electrode along the length direction.
Illustratively, the wire electrode support device further controls the wire electrode to move along the axial direction of the crystal bar and/or the radial direction of the crystal bar. The wire electrode supporting device 401 supports the wire electrode 400 to move along the axial direction of the ingot 300, and when the number of wire electrodes is small, the ingot 300 cannot be cut to a desired thickness by performing one-time cutting between the ingot 300 and the wire electrode 400, and the wire electrode 400 is moved along the axial direction of the ingot 300 to cut the ingot 300 a plurality of times, thereby finally cutting the ingot 300 into wafers having a desired thickness.
The wire electrode support 401 supports the wire electrode 400 to move along the radial direction of the ingot 300, so that the wire electrode 400 and the ingot 300 can move relatively, and in the process, the wire electrode 400 and the ingot 300 are not contacted all the time. It is to be understood that the embodiment using the wire electrode support means to support the wire electrode for movement along the axial direction of the ingot to achieve relative movement between the wire electrode support means and the ingot is merely exemplary, and those skilled in the art will appreciate that the present invention can be achieved by controlling the movement of the ingot along the radial direction thereof or by controlling both the movement of the wire electrode and the ingot along the radial direction of the ingot.
In the case where the linear electrode supporting means is provided as a guide roller, the guide roller is provided with a wire guide groove to fix the position of the linear electrode. The distance between the wire-like electrodes is set, for example, by setting the distance of the wire groove on the guide roller. Illustratively, the distance between adjacent wire slots ranges from 100 μm to 1500 μm. Because the thickness of the wafer in the existing semiconductor manufacturing process is often set to be 100-1500 μm, the distance between the wire grooves is set to be 100-1500 μm, so that the distance between the adjacent linear electrodes is 100-1500 μm, and a cut wafer is formed by cutting the crystal bar through the adjacent linear electrodes.
Illustratively, the anode further comprises a crystal bar supporting device. As shown in fig. 1, a crystal bar supporting device 301 is disposed on the anode to support the crystal bar 300 and is connected to a positive electrode of a power supply, and the crystal bar supporting device 301 is electrically connected to the crystal bar 300.
Illustratively, referring to FIGS. 3A and 3B, there are shown schematic cross-sectional structural views of the ingot supporting apparatus of FIG. 1 along the A-A direction and the B-B direction. The ingot supporting device 301 is used for supporting the ingot 300 and comprises a first portion 3011 and a second portion 3012, the first portion 3011 is electrically connected to the power supply 100, and the second portion 3012 is in contact with the ingot 300. The first portion 3011 is configured as a bar, and the second portion 3012 is configured as a comb structure. Further, as shown in fig. 1, the second portion 3012 provided as a comb tooth structure includes convex portions 30121 provided as comb teeth and concave portions 30122 located between the comb teeth. The linear electrode 400 is arranged corresponding to the concave part 30122 of the comb-tooth structure, during the electrolytic reaction, the part of the crystal bar 300 corresponding to the concave part 30122 forms an anode in the electrolytic reaction corresponding to the linear electrode 400 on the cathode, the part of the crystal bar 300 corresponding to the concave part 30122 is consumed by the electrochemical reaction, and the part of the crystal bar 300 corresponding to the convex part 30121 is left without participating in the reaction, thereby finally forming the effect of cutting the crystal bar along the concave part on the comb-tooth structure. Illustratively, referring to fig. 3A, the width D of the convex portion 30121 of the comb tooth structure on the second portion 3012 is set to be the thickness of the wafer formed by slicing the ingot. Illustratively, the thickness of the silicon wafer ranges from 100 μm to 1500 μm, and the width of the convex portion on the comb tooth structure ranges from 100 μm to 1500 μm. In one example, the silicon wafer has a thickness of 750 μm and the projections of the comb tooth structure have a width of 750 μm. Illustratively, the recesses have a size in the range of 80-200 μm.
Illustratively, the material of the ingot support apparatus 301 may be any non-metallic conductive material. Specifically, the ingot supporting device 301 may be configured as graphite. Carbon-coated metal materials or conductive ceramics, and the like.
Further, the crystal bar supporting device 301 and the crystal bar 300 are connected by a conductive adhesive, so as to realize the electrical connection between the crystal bar supporting device 301 and the crystal bar 300.
According to an embodiment of the invention, the crystal bar slicing device further comprises a pH control device for controlling the pH in the electrolytic cell. Illustratively, the electrolyte is configured to contain a mixture of hydrofluoric acid and acetic acid. The acetic acid is used as a buffer agent, so that the pH value of the whole electrolyte is adjusted, and the conductivity of the electrolyte can be increased. Illustratively, the pH control device comprises a pH detector and an acetic acid supply device.
According to an embodiment of the invention, the crystal bar slicing device further comprises a temperature control device for controlling the temperature of the cathode, the anode and the electrolyte. Illustratively, the temperature control device comprises a thermometer and a water cooling device. Illustratively, the temperature control device controls the temperature of the cathode, the anode, and the electrolyte to be between 22 ℃ and 24 ℃.
According to an embodiment of the invention, the ingot slicing apparatus further comprises a hydrogen collecting device for collecting hydrogen generated by the electrochemical reaction on the cathode. In order to avoid the danger caused by hydrogen generated by the cathode, the whole crystal bar slicing device is set to be a closed system, and meanwhile, the gas in the closed system is collected by a pump and the like in an auxiliary mode to collect the hydrogen.
According to one embodiment of the invention, the crystal bar slicing device further comprises an electrolyte circulating system for replenishing the electrolyte into the electrolytic cell. Illustratively, the electrolyte circulation system comprises an acid-proof pump and a filter, the electrolyte is pumped out by the acid-proof pump, the metal and particles in the electrolyte are filtered out by the filter, and the filtered electrolyte is circulated and introduced into the electrolytic cell, so that the use efficiency of the electrolyte is effectively improved, and the production cost is reduced.
In summary, according to the crystal bar slicing device provided by the invention, the linear electrode supporting device capable of supporting the linear electrode to move along the length direction of the linear electrode is arranged on the cathode, so that hydrogen precipitated on the linear electrode of the cathode is removed in time in the process of electrochemically cutting the crystal bar by the wafer, the effect of cleaning and adsorbing the hydrogen on the linear electrode to influence the electrochemical reaction of the cathode is avoided, and the efficiency and the quality of cutting the crystal bar are ensured.
The present invention has been illustrated by the above embodiments, but it should be understood that the above embodiments are for illustrative and descriptive purposes only and are not intended to limit the invention to the scope of the described embodiments. Furthermore, it will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that many variations and modifications may be made in accordance with the teachings of the present invention, which variations and modifications are within the scope of the present invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (10)
1. A crystal bar slicing apparatus, comprising:
a power source;
an electrolytic cell for storing an electrolyte;
the anode comprises a crystal bar supporting device and a crystal bar, and the crystal bar supporting device is electrically connected with the power supply and the crystal bar respectively;
the cathode is accommodated in the electrolytic cell and is electrically connected with the power supply, the cathode comprises at least one linear electrode, the length direction of the linear electrode is crossed with the axial direction of the crystal bar, the linear electrode is not contacted with the crystal bar, and crystal bar slicing is realized through the relative motion between the linear electrode and the crystal bar when the power supply is connected between the anode and the cathode; wherein the content of the first and second substances,
the cathode further comprises a wire electrode support device for controlling the wire electrode to move along the length direction of the wire electrode.
2. The ingot slicing apparatus of claim 1, wherein the wire electrode support further controls movement of the wire electrode in an axial direction of the ingot and/or in a radial direction of the ingot.
3. The apparatus of claim 1, wherein the wire electrode support device comprises at least two guide rollers, and the guide rollers rotate to move the wire electrode along the length of the wire electrode.
4. The apparatus as claimed in claim 3, wherein the guide rollers are provided with wire grooves, and the distance between adjacent wire grooves is set to the thickness of the wafer formed by slicing the ingot.
5. The apparatus according to claim 4, wherein the distance between adjacent wire grooves is in the range of 100 μm to 1500 μm.
6. The apparatus of claim 3, wherein the material of the guide roller comprises graphite, carbon-coated metal material, and conductive ceramic.
7. The apparatus of claim 1, further comprising a pH control device for controlling a pH in the electrolytic cell.
8. The apparatus of claim 1, further comprising a temperature control device for controlling the temperature of the cathode, the anode and the electrolyte.
9. The apparatus of claim 1, further comprising a hydrogen collecting means for collecting hydrogen generated by the electrochemical reaction at the cathode.
10. The apparatus of claim 1, further comprising an electrolyte circulation system for circulating and replenishing the electrolyte in the electrolytic cell.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811477368.1A CN111267247A (en) | 2018-12-05 | 2018-12-05 | Crystal bar slicing device |
| TW108140778A TW202021701A (en) | 2018-12-05 | 2019-11-11 | Device for slicing ingot |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811477368.1A CN111267247A (en) | 2018-12-05 | 2018-12-05 | Crystal bar slicing device |
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| CN111267247A true CN111267247A (en) | 2020-06-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811477368.1A Pending CN111267247A (en) | 2018-12-05 | 2018-12-05 | Crystal bar slicing device |
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| CN (1) | CN111267247A (en) |
| TW (1) | TW202021701A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115958709A (en) * | 2022-12-28 | 2023-04-14 | 宁波合盛新材料有限公司 | Multi-wire cutting method for silicon carbide wafer |
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| CN101673785A (en) * | 2009-09-25 | 2010-03-17 | 上海大学 | Method for preparing reflection reduction film with surface embedded type porous silicon structure of silicon base solar battery |
| CN101680106A (en) * | 2007-05-09 | 2010-03-24 | 株式会社昆腾14 | Method for processing silicon base material, article processed by the method, and processing apparatus |
| JP2010274399A (en) * | 2009-06-01 | 2010-12-09 | Tokyo Electron Ltd | Machining device, machining method and storage medium |
| US20160016243A1 (en) * | 2014-07-16 | 2016-01-21 | Korea Institute Of Energy Research | Silicon wafer slicing device using wire discharge machining |
| JP2016107365A (en) * | 2014-12-04 | 2016-06-20 | 株式会社ディスコ | Multi-wire electric discharge machining device |
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2018
- 2018-12-05 CN CN201811477368.1A patent/CN111267247A/en active Pending
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- 2019-11-11 TW TW108140778A patent/TW202021701A/en unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101680106A (en) * | 2007-05-09 | 2010-03-24 | 株式会社昆腾14 | Method for processing silicon base material, article processed by the method, and processing apparatus |
| JP2010274399A (en) * | 2009-06-01 | 2010-12-09 | Tokyo Electron Ltd | Machining device, machining method and storage medium |
| CN101673785A (en) * | 2009-09-25 | 2010-03-17 | 上海大学 | Method for preparing reflection reduction film with surface embedded type porous silicon structure of silicon base solar battery |
| US20160016243A1 (en) * | 2014-07-16 | 2016-01-21 | Korea Institute Of Energy Research | Silicon wafer slicing device using wire discharge machining |
| JP2016107365A (en) * | 2014-12-04 | 2016-06-20 | 株式会社ディスコ | Multi-wire electric discharge machining device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115958709A (en) * | 2022-12-28 | 2023-04-14 | 宁波合盛新材料有限公司 | Multi-wire cutting method for silicon carbide wafer |
| CN115958709B (en) * | 2022-12-28 | 2023-06-20 | 宁波合盛新材料有限公司 | Multi-line cutting method for silicon carbide wafer |
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| TW202021701A (en) | 2020-06-16 |
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Application publication date: 20200612 |