JP2010274399A - Machining device, machining method and storage medium - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a machining device which can stably slice a substrate from an ingot, and a machining method and a storage medium. <P>SOLUTION: The machining device 10 is used for manufacturing a silicon substrate 31 from a silicon ingot 30. The machining device 10 includes a processing vessel 11 for accommodating electrolytic solution 12, an ingot holding part 13 for holding the silicon ingot 30 immersed in the electrolytic solution 12 in the processing vessel 11 and an electrode line 38 for cutting the silicon ingot 30, an electrode device 14 for slicing the silicon ingot 30 by the electrode line 38 and an electrode device holding part 15 for holding the electrode device 14. While the silicon ingot 30 is sliced, the ingot holding part 13 is lifted relative to the electrode device 14 and the silicon ingot 30 is cut by the electrode line 38 immediately below a liquid level 12a of the electrolytic solution 12. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a processing apparatus for manufacturing a substrate from an ingot, a processing method for manufacturing a substrate from an ingot, and a storage medium, and more particularly, a processing apparatus capable of stably slicing a substrate from an ingot, The present invention relates to a processing method and a storage medium.

  Currently, crystalline silicon solar cells are generally used as solar cells. In the manufacturing process for manufacturing this crystalline silicon solar cell, a silicon ingot is sliced to produce a plurality of silicon substrates from the silicon ingot.

  As a method for cutting out the silicon substrate, for example, there is a cutting technique using a multi-wire saw. However, when a silicon ingot is cut using a multi-wire saw in this way, the silicon ingot's scraping loss (hereinafter also referred to as kerf loss) increases, and the disposal rate of the silicon ingot material increases.

  In particular, since the ratio of the silicon material cost and the processing cost occupies a large proportion of the manufacturing cost of the crystalline silicon solar cell, if the kerf loss can be reduced, the manufacturing cost of the crystalline silicon solar cell can be greatly reduced.

  On the other hand, as a method of cutting out a silicon ingot, a method of stretching a plurality of platinum wires and slicing the silicon ingot by an electrochemical method using the plurality of platinum wires is known (Patent Documents 1 to 3). reference).

Japanese Patent Laid-Open No. 51-14470 JP-A-4-128010 International Publication No. 2008/140058 Pamphlet

  Thus, when cutting a silicon ingot using an electrochemical method, it is thought that kerf loss can be reduced compared with the past. However, when actually mass-producing silicon solar cells, it is necessary to slice about 500 to 1000 silicon substrates at a time from one silicon ingot. In this case, for example, an apparatus in which about 1000 platinum wires having a diameter of about 100 μm are arranged at intervals of about 100 μm is required. However, it is practically difficult to realize such an apparatus. Further, when a platinum wire having a diameter of about 100 μm is used, there is a fear that the electrical conductivity and mechanical strength are insufficient.

  In Patent Documents 1 to 3, the platinum wire is raised or lowered with respect to the silicon ingot held at a predetermined position in the electrolytic solution, and the silicon ingot is sliced. In this case, the silicon ingot is cut by the platinum wire at a deep position away from the electrolyte surface. For this reason, hydrogen bubbles generated by the electrochemical reaction stay between the sliced portions of the silicon ingot, and as a result, the cutting process may not be performed smoothly.

  The present invention has been made in consideration of such points, and an object thereof is to provide a processing apparatus, a processing method, and a storage medium that can stably slice a substrate from an ingot.

  A processing apparatus according to the present invention is a processing apparatus for producing a substrate from an ingot. A processing tank for storing an electrolytic solution, an ingot holding part for holding the ingot in a state immersed in the electrolytic solution in the processing tank, and an ingot An electrode device including an electrode wire to be cut, and an electrode device for slicing the ingot with the electrode wire, and an electrode device holding portion for holding the electrode device, and the ingot holding portion with respect to the electrode device while slicing the ingot And the ingot is cut by the electrode wire immediately below the electrolyte surface.

  In the processing apparatus according to the present invention, the ingot holding part preferably holds the ingot via a dummy ingot.

  In the processing apparatus according to the present invention, the electrode device preferably includes a frame and a plurality of electrode wires extending in parallel to each other in the frame.

  In the processing apparatus according to the present invention, the electrode wire is preferably made of tungsten or molybdenum.

  In the processing apparatus according to the present invention, it is preferable that the liquid level of the electrolytic solution accommodated in the processing tank is maintained at a constant height while slicing the ingot.

  In the processing apparatus according to the present invention, while slicing the ingot, the electrode device holding portion is held at a constant height, and the ingot holding portion is raised with respect to the electrode device holding portion held at a constant height. preferable.

  In the processing apparatus according to the present invention, it is preferable that the ingot holding part is held at a constant height and the electrode device holding part is lowered with respect to the ingot holding part held at a constant height while slicing the ingot. .

  In the processing apparatus according to the present invention, it is preferable that the ingot is cut by the electrode wire immediately below the liquid level of the electrolytic solution by raising or lowering the height of the liquid level of the electrolytic solution.

  A processing method according to the present invention uses a processing apparatus having a processing tank, an ingot holding part for holding an ingot, an electrode device including an electrode wire, and an electrode device holding part for holding an electrode device to remove a substrate from the ingot. In the processing method for producing, by the step of supplying the electrolytic solution to the treatment tank, the step of holding the ingot in a state immersed in the electrolytic solution in the treatment tank by the electrode device holding unit, and the electrode wire of the electrode device, A step of slicing the ingot, and in the step of slicing the ingot, the ingot holding part rises relative to the electrode device, and the cutting of the ingot by the electrode wire is performed directly below the liquid surface of the electrolyte. It is characterized by that.

  The storage medium according to the present invention is used in a processing method using a processing apparatus having a processing tank, an ingot holding unit that holds an ingot, an electrode device that includes an electrode wire, and an electrode device holding unit that holds the electrode device. A storage medium storing a computer program that operates on a computer, wherein the processing method includes a step of supplying an electrolytic solution to the processing tank and a state in which the processing apparatus is immersed in the electrolytic solution in the processing tank by the electrode device holding unit. A step of holding the ingot and a step of slicing the ingot by the electrode wire of the electrode device, and in the step of slicing the ingot, the ingot holding portion is raised relative to the electrode device, and the electrode wire The ingot is cut immediately below the electrolyte surface.

  According to the present invention, during slicing of the ingot, the ingot holding part rises relative to the electrode device, and the cutting of the ingot by the electrode wire is performed directly below the liquid surface of the electrolytic solution. This makes it possible to stably slice the substrate from the ingot without hydrogen bubbles generated by the electrochemical reaction staying between the sliced portions of the ingot or adhering to the electrode wire. it can.

FIG. 1 is a schematic configuration diagram showing a processing apparatus according to an embodiment of the present invention. FIG. 2 is a perspective view showing a silicon ingot. FIG. 3 is a plan view showing an electrode device of a processing apparatus according to an embodiment of the present invention. FIG. 4 is a plan view showing an ingot holding part of the machining apparatus according to the embodiment of the present invention. FIGS. 5A and 5B are vertical cross-sectional views showing the electrode device and the ingot holding part during slicing of the silicon ingot. FIG. 6 is a schematic view showing a processing apparatus according to an embodiment of the present invention in a state where a silicon ingot is placed on an ingot holding part. FIG. 7 is a schematic diagram showing a processing apparatus according to an embodiment of the present invention before starting slice processing. FIG. 8 is a diagram showing an electrochemical reaction in the treatment tank. FIG. 9 is a schematic diagram showing a processing apparatus according to an embodiment of the present invention in a state where slice processing is completed. FIG. 10 is a diagram showing an electrode wire and a silicon ingot when slicing is performed using the processing apparatus according to the embodiment of the present invention. FIG. 11 is a diagram showing an electrode wire and a silicon ingot when slicing is performed using a processing apparatus as a comparative example.

  Hereinafter, an embodiment of a processing apparatus, a processing method, and a storage medium according to the present invention will be described with reference to FIGS.

First, the configuration of the machining apparatus according to the present embodiment will be described with reference to FIG.

  The processing apparatus 10 shown in FIG. 1 is an apparatus for producing a plurality of silicon substrates (substrates) 31 for solar cells (see FIG. 2) by slicing a silicon ingot (ingot) 30.

  As shown in FIG. 1, the processing apparatus 10 includes a casing 25, a processing tank 11 that is disposed in the casing 25 and that stores the electrolytic solution 12, and a silicon ingot that is immersed in the electrolytic solution 12 in the processing tank 11. The ingot holding part 13 holding 30, the electrode device 14 for slicing the silicon ingot 30, and the electrode device holding part 15 holding the electrode device 14 are provided.

Among these, the treatment tank 11 is filled with an electrolytic solution 12 made of a mixed solution of a chemical solution made of hydrofluoric acid (HF) and a solvent made of isopropyl alcohol (IPA), for example. In addition to IPA, a lower alcohol such as methanol (CH ₃ OH) or ethanol (C ₂ H ₅ OH) may be used as the solvent.

  Further, in the treatment tank 11, a drain pipe 16 for keeping the height of the liquid surface 12 a of the electrolyte solution 12 constant is disposed, and a liquid storage tank 17 is connected to the drain pipe 16. Further, a recirculation module 18 having a pump 19 and a filter 20 is connected to the liquid storage tank 17, and this recirculation module 18 is connected to the treatment tank 11. Then, by the action of the pump 19 of the recirculation module 18, the electrolyte solution 12 is circulated and used in the order of the recirculation module 18, the treatment tank 11, the drain pipe 16, the liquid storage tank 17, and the recirculation module 18. It has become. The liquid storage tank 17 is connected to a chemical supply unit 21 that supplies a chemical solution such as hydrofluoric acid (HF) and a solvent supply unit 22 that supplies a solvent such as isopropyl alcohol (IPA).

  A fan filter unit 27 is provided at the upper part of the casing 25, and an exhaust unit 28 is provided at the lower part of the casing 25. Thereby, when the silicon ingot 30 is sliced, hydrogen generated by an electrochemical reaction in the electrolytic solution 12 is discharged to the outside of the housing 25. A cover 29 is provided above the treatment tank 11 to prevent foreign matters from entering the electrolytic solution 12 and shaking of the liquid surface 12 a of the electrolytic solution 12.

  On the other hand, the ingot holding part 13 is configured to be movable up and down by the first lifting mechanism 23. A DC power supply 24 is provided in the housing 25, and the ingot holding unit 13 is electrically connected to the positive electrode (+) side of the DC power supply 24.

  The electrode device holding part 15 can be raised and lowered by the second raising / lowering mechanism 26 and can be fixed at a predetermined height position. The electrode device holding unit 15 is electrically connected to the negative electrode (−) side of the DC power supply device 24.

  The processing apparatus 10 further includes a control unit 50. The control unit 50 has a function of controlling the voltage and current of the DC power supply device 24 and controlling the lifting operation of the first lifting mechanism 23 and the second lifting mechanism 26. Further, the control unit 50 has a function of adjusting the concentration of the electrolytic solution 12 in the processing tank 11 by controlling the chemical solution supply unit 21 and the solvent supply unit 22. The control unit 50 is used in a machining method using the machining apparatus 10 and has a storage medium 51 that stores a computer program that runs on a computer.

  Next, the configuration of the electrode device 14 and the electrode device holding portion 15 will be further described with reference to FIG. As shown in FIG. 3, the electrode device 14 includes a rectangular frame 37 having a central opening 37 a and a plurality of electrode lines 38 extending in parallel with each other within the central opening 37 a of the frame 37. Yes. Among these, each electrode line 38 is for cutting the silicon ingot 30 and has a ribbon shape. Such an electrode device 14 is also referred to as a grid-type electrode.

  The frame body 37 has circular mounting holes 39 at its four corners. The electrode device 14 is attached to the electrode device holding portion 15 by inserting the guide rods 15 a of the electrode device holding portion 15 into the attachment holes 39. It is preferable that the frame body 37 and the electrode wire 38 are integrally formed. In FIG. 3, three electrode lines 38 are shown for convenience, but actually, about 100 to 1000 electrode lines 38 are provided.

  The electrode device 14 (frame body 37 and electrode wire 38) is made of tungsten, molybdenum, or the like. With such a configuration, the electrode device 14 can be manufactured at low cost, and as a result, the manufacturing cost of the solar cell silicon substrate 31 can be suppressed. On the other hand, the electrode device holding part 15 is made of a conductive material such as stainless steel, and a metal plating such as platinum plating or gold plating is applied only to a portion in contact with the electrode device 14. An insulating coating such as a registered trademark is applied.

  Next, the configuration of the ingot holding unit 13 will be further described with reference to FIGS. 4 and 5A and 5B. The ingot holding part 13 is provided with an electrode surface 40 that is in electrical contact with the silicon ingot 30, and a pair that stands on both sides of the electrode surface 40 and prevents the solar cell silicon substrate 31 after being cut from lying down. Plate 41. Of these, the electrode surface 40 is made of metal plating such as platinum plating or gold plating. The ingot holding portion 13 is made of a conductive material such as stainless as a whole, and an insulating coating such as Teflon (registered trademark) is applied to portions other than the electrode surface 40.

  As shown in FIGS. 5A and 5B, the silicon ingot 30 is preferably placed on the electrode surface 40 of the ingot holding portion 13 via a dummy ingot 32 made of, for example, silicon. With such a configuration, when the silicon ingot 30 is sliced using the electrode wire 38 of the electrode device 14 (FIG. 5B), the electrode surface 40 can be prevented from being damaged. The dummy ingot 32 is preferably replaced every time the slice processing is performed several times.

Processing method by the processing device Next, operation of the present embodiment having such a configuration, in particular for the processing method using the processing apparatus 10 described above will be described with reference to FIGS. 6 to 11.

  First, the electrolytic solution 12 is supplied to the treatment tank 11. At this time, a chemical solution such as hydrofluoric acid (HF) is supplied from the chemical solution supply unit 21 and a solvent such as isopropyl alcohol (IPA) is supplied from the solvent supply unit 22 to produce the electrolyte solution 12 having a predetermined concentration. . The electrolytic solution 12 is fed from the liquid storage tank 17 by the pump 19 of the recirculation module 18 and filled in the processing tank 11. At this time, the height of the liquid surface 12 a of the electrolytic solution 12 is kept constant by the drainage pipe 16 provided in the processing tank 11.

  Next, as shown in FIG. 6, the silicon ingot 30 is placed and held on the ingot holding portion 13 via the dummy ingot 32. Further, the electrode device 14 is attached to and held by the electrode device holding portion 15.

  Next, as shown in FIG. 7, the first elevating mechanism 23 is controlled by the control unit 50 to lower the ingot holding unit 13 and the silicon ingot 30 to immerse the silicon ingot 30 in the electrolytic solution 12. . The second elevating mechanism 26 lowers the electrode device holding unit 15 and the electrode device 14 by being controlled by the control unit 50. At this time, the lower end of the electrode wire 38 of the electrode device 14 is positioned directly below the liquid surface 12a of the electrolytic solution 12 (within about 10 mm downward from the liquid surface 12a of the electrolytic solution 12). Further, the silicon ingot 30 is arranged so that the upper end of the silicon ingot 30 is close to the lower end of the electrode line 38 of the electrode device 14.

  Subsequently, under the control of the control unit 50, the DC power supply device 24 applies a voltage of about 20 to 100 V between the ingot holding unit 13 and the electrode device holding unit 15. At this time, the current line density flowing through each electrode line 38 of the electrode device 14 is preferably about 50 to 200 mA / cm. In this way, an electrochemical reaction occurs between the silicon ingot 30 serving as the anode and the electrode device 14 serving as the cathode.

That is, as shown in FIG. 8, when an electric current is passed between the silicon ingot 30 and the electrode device 14 via the electrolytic solution 12, holes (h ⁺ ) are supplied to the surface of the silicon ingot 30. As a result, the following reaction occurs on the surface of the silicon ingot 30, and hydrogen atoms (H ⁺ ) are released into the electrolyte solution 12.

Si + 2H ₂ O + 4h ⁺ → SiO ₂ + 4H ⁺ (1)

Further, a silicon oxide film (SiO ₂ ) is generated on the surface of the silicon ingot 30 and is dissolved by hydrofluoric acid (HF) in the electrolytic solution 12, whereby the surface of the silicon ingot 30 is shaved.

On the other hand, the liberated hydrogen atoms (H ⁺ ) reach each electrode line 38 of the electrode device 14, where they combine with the electrons (e ⁻ ) supplied to the electrode line 38, and hydrogen (H ₂ ) gas as follows. Is generated.

4H ⁺ + 4e ⁻ → 2H ₂ (2)

  Subsequently, the silicon ingot 30 is sliced by raising the ingot holding part 13 and the silicon ingot 30 relative to the electrode device 14 (FIG. 9). Thereby, a plurality of silicon substrates 31 for solar cells are produced from the silicon ingot 30.

  That is, the ingot is held by the first elevating mechanism 23 while the electrode device holding unit 15 and the electrode device 14 are held immediately below the liquid surface 12a of the electrolytic solution 12 (within about 10 mm downward from the liquid surface 12a of the electrolytic solution 12) (FIG. 7). The holding part 13 and the silicon ingot 30 are raised. As described above, the height of the liquid surface 12a of the electrolytic solution 12 is kept constant. Therefore, while the silicon ingot 30 is sliced, the cutting of the silicon ingot 30 by the electrode wire 38 is always performed directly below the liquid surface 12 a of the electrolyte solution 12. In addition, it is preferable that the raise speed | rate of the silicon ingot 30 at this time shall be 100 micrometers / min-300 micrometers / min.

In this way, while the silicon ingot 30 is sliced, the silicon ingot 30 is cut by the electrode wires 38 immediately below the liquid surface 12 a of the electrolyte solution 12. As a result, hydrogen (H ₂ ) bubbles generated by the above-described electrochemical reaction are released from the electrode wire 38 to above the liquid surface 12 a of the electrolyte solution 12, and between the sliced portions of the silicon ingot 30. (See FIG. 10). As a result, the solar cell silicon substrate 31 can be stably sliced from the silicon ingot 30. Moreover, the width L (refer FIG. 2) of the silicon ingot 30 cut between adjacent silicon substrates 31 for solar cells can be suppressed to 100 micrometers or less, and a kerf loss can be reduced.

  In addition, since the silicon ingot 30 is cut immediately below the liquid surface 12a of the electrolyte solution 12, the slice portion of the silicon ingot 30 (that is, the portion constituting the solar cell silicon substrate 31 after cutting) is electrolyzed immediately after cutting. The liquid 12 is exposed on the liquid surface 12a. Thereby, the drying of the slice portion of the silicon ingot 30 can be promoted.

On the other hand, as a comparative example, as shown in FIG. 11, it is assumed that the silicon ingot 30 is cut at a position deeper than the liquid surface 12 a of the electrolytic solution 12. In this case, hydrogen (H ₂ ) bubbles may stay between the sliced portions of the silicon ingot 30 or may adhere to the periphery of the electrode wire 38. In this case, the electrochemical reaction between the electrode wire 38 and the silicon ingot 30 is hindered by hydrogen (H ₂ ) bubbles, and the silicon ingot 30 is not cut smoothly. Further, since the slice portion of the silicon ingot 30 is below the liquid surface 12a of the electrolytic solution 12, the solar cell silicon substrate 31 may not be sufficiently dried.

  On the other hand, according to the present embodiment, the silicon ingot 30 is cut by the electrode wire 38 immediately below the liquid surface 12 a of the electrolytic solution 12, so that hydrogen bubbles generated by the electrochemical reaction are generated in the silicon ingot 30. Of these, it does not stay between the sliced portions or adhere to the electrode wires 38. Thereby, the silicon substrate 31 for solar cells can be stably sliced from the silicon ingot 30.

  Moreover, according to this Embodiment, since the electrode apparatus 14 has the frame 37 and the some electrode wire 38 extended in parallel mutually in the frame 37, compared with the case where a platinum wire is stretched. Thus, the electrode device 14 can be manufactured easily and at low cost.

  In the present embodiment, a computer program that is used in the machining method using the machining apparatus 10 described above and operates on a computer, and a storage medium 51 that stores such a computer program are also provided.

  By the way, in the present embodiment, while slicing the silicon ingot 30, the liquid surface of the electrolytic solution 12 accommodated in the processing tank 11 is held at a constant height, and the electrode device holding portion 15 is held at a constant height. And the ingot holding part 13 is raised with respect to the electrode device holding part 15. However, if the ingot holding part 13 rises relatively with respect to the electrode device 14 and the cutting of the silicon ingot 30 by the electrode wire 38 is performed directly below the liquid surface 12a of the electrolytic solution 12, it is limited to the above-described embodiment. It is not something.

  For example, while slicing the silicon ingot 30, all of the liquid surface 12 a of the electrolytic solution 12, the ingot holding unit 13, and the electrode device holding unit 15 are raised and / or lowered, and the silicon ingot 30 is cut by the electrode wire 38. You may make it perform just under the liquid level 12a of the electrolyte solution 12. FIG.

  In the present embodiment, when the electrode device holding portion 15 is held at a certain height and the ingot holding portion 13 is raised with respect to the electrode device holding portion 15, the electrolyte solution 12 is increased as the silicon ingot 30 is raised. It is conceivable that the liquid level 12a is lowered. In this case, the electrolytic solution 12 may be supplied to the treatment tank 11 by the recirculation module 18 and the overflowed electrolytic solution 12 may be discharged from the drain pipe 16 to keep the height of the liquid level 12a constant. . Alternatively, considering the volume of the silicon ingot 30 exposed above the liquid level 12a as the silicon ingot 30 rises, the height of the liquid level 12a is made constant by supplying the volume of the electrolyte 12 to the treatment tank 11. May be held.

  On the other hand, when the ingot holding part 13 is held at a certain height and the electrode device holding part 15 is lowered with respect to the ingot holding part 13, the liquid level 12a of the electrolyte 12 is raised or lowered accordingly. Can be considered. In this case, the height of the liquid surface 12 a may be kept constant by supplying the electrolytic solution 12 to the treatment tank 11 by the recirculation module 18 or discharging the electrolytic solution 12 from the drainage pipe 16.

  By the way, in this Embodiment, although the silicon substrate 31 for solar cells was mentioned and demonstrated as one of the uses of the produced | generated board | substrate, it is not restricted to this, For example, in order to produce | generate the board | substrate used as a semiconductor wafer. In addition, the processing apparatus, the processing method, and the storage medium according to the present embodiment can also be used.

DESCRIPTION OF SYMBOLS 10 Processing apparatus 11 Processing tank 12 Electrolytic solution 13 Ingot holding part 14 Electrode apparatus 15 Electrode apparatus holding part 16 Drainage pipe 21 Chemical solution supply part 22 Solvent supply part 23 1st raising / lowering mechanism 24 DC power supply device 26 2nd raising / lowering mechanism 30 Silicon ingot DESCRIPTION OF SYMBOLS 31 Solar cell silicon substrate 32 Dummy ingot 37 Frame 38 Electrode wire 39 Mounting hole 40 Electrode surface 41 Plate 50 Control part 51 Storage medium

Claims (10)

In a processing apparatus for producing a substrate from an ingot,
A treatment tank containing an electrolytic solution;
An ingot holding part for holding the ingot in a state immersed in the electrolytic solution in the treatment tank;
An electrode device including an electrode wire for cutting the ingot, and an electrode device for slicing the ingot with the electrode wire;
An electrode device holding unit for holding the electrode device;
During the slicing of the ingot, the ingot holding part rises relative to the electrode device, and the cutting of the ingot by the electrode wire is performed immediately below the liquid surface of the electrolytic solution.   The processing apparatus according to claim 1, wherein the ingot holding unit holds the ingot via a dummy ingot.   The processing apparatus according to claim 1, wherein the electrode device includes a frame body and a plurality of electrode lines extending in parallel with each other in the frame body.   4. The processing apparatus according to claim 1, wherein the electrode wire is made of tungsten or molybdenum.   5. The processing apparatus according to claim 1, wherein the level of the electrolytic solution accommodated in the processing tank is maintained at a constant height during slicing of the ingot.   6. The electrode device holding portion is held at a constant height while the ingot is sliced, and the ingot holding portion is raised with respect to the electrode device holding portion held at a constant height. Processing equipment.   The ingot holding part is held at a constant height while the ingot is sliced, and the electrode device holding part is lowered with respect to the ingot holding part held at a constant height. Processing equipment.   The ingot is cut by the electrode wire by raising or lowering the height of the electrolytic solution level, and the ingot is cut directly under the electrolytic solution level. Processing equipment. In a processing method for manufacturing a substrate from an ingot using a processing apparatus having a processing tank, an ingot holding portion for holding an ingot, an electrode device including an electrode wire, and an electrode device holding portion for holding the electrode device ,
Supplying an electrolytic solution to the treatment tank;
A step of holding the ingot in a state of being immersed in the electrolytic solution in the treatment tank by the electrode device holding unit;
A step of slicing the ingot with the electrode wire of the electrode device,
In the process of slicing the ingot, the ingot holding part is raised relative to the electrode device, and the cutting of the ingot by the electrode wire is performed immediately below the liquid surface of the electrolytic solution. A computer that is used in a processing method using a processing apparatus having a processing tank, an ingot holding unit that holds an ingot, an electrode device that includes an electrode wire, and an electrode device holding unit that holds the electrode device, and which operates on a computer A storage medium storing a program,
The processing method is:
Supplying an electrolytic solution to the treatment tank;
A step of holding the ingot in a state of being immersed in the electrolytic solution in the treatment tank by the electrode device holding unit;
A step of slicing the ingot with the electrode wire of the electrode device,
In the process of slicing an ingot, the ingot holding part is raised relative to the electrode device, and the cutting of the ingot by the electrode wire is performed immediately below the liquid surface of the electrolytic solution.

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