CN111246671A - Plated through hole processing method for improving reliability of 5G high-frequency material - Google Patents

Plated through hole processing method for improving reliability of 5G high-frequency material Download PDF

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Publication number
CN111246671A
CN111246671A CN202010074291.4A CN202010074291A CN111246671A CN 111246671 A CN111246671 A CN 111246671A CN 202010074291 A CN202010074291 A CN 202010074291A CN 111246671 A CN111246671 A CN 111246671A
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CN
China
Prior art keywords
hole
functionalized
copper
current pulse
electroplating
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CN202010074291.4A
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Chinese (zh)
Inventor
苏南兵
唐政和
邱小华
杨颖颖
胡玉春
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Zhuhai Zhongjing Electronic Circuit Co ltd
Huizhou China Eagle Electronics Technology Co ltd
Original Assignee
Zhuhai Zhongjing Electronic Circuit Co ltd
Huizhou China Eagle Electronics Technology Co ltd
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Priority to CN202010074291.4A priority Critical patent/CN111246671A/en
Publication of CN111246671A publication Critical patent/CN111246671A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0094—Filling or covering plated through-holes or blind plated vias, e.g. for masking or for mechanical reinforcement
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0237—High frequency adaptations
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/115—Via connections; Lands around holes or via connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/425—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern
    • H05K3/426—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern initial plating of through-holes in substrates without metal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/095—Conductive through-holes or vias
    • H05K2201/0959—Plated through-holes or plated blind vias filled with insulating material

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

The invention provides a plated through hole processing method for improving reliability of a 5G high-frequency material, which comprises the following steps of: s1, after a metallized through hole is formed by drilling and electroplating, filling resin/copper slurry into the hole; s2, after the resin is cured, secondary drilling is carried out by using a drill bit with the diameter being 0.2-0.4mm smaller than the original diameter, and a drill hole is formed in the filled resin; and S3, electroplating the through hole after the second drilling, wherein the resin/copper paste is wrapped and sandwiched by the secondary hole copper electroplating layer, and the resin/copper paste is used as the buffer of the secondary hole copper electroplating layer. In the invention, after the primary hole copper is broken, the secondary hole copper can also ensure the interconnection of the via holes, and because the interval between the primary hole copper and the hole plugging resin exists, the stress can not act on the secondary hole copper, thereby ensuring the connection reliability of the via holes.

Description

Plated through hole processing method for improving reliability of 5G high-frequency material
Technical Field
The invention belongs to the field of PCB (printed circuit board) processing methods, and particularly relates to a plated through hole processing method for improving reliability of a 5G high-frequency material.
Background
When the dielectric constant of a PTFE sheet material used for producing a PCB on the market at present is required to be below 2.5, ceramic powder filler cannot be added (the dielectric constant is increased due to the addition of the ceramic powder filler), so that the Z-axis CTE of the PTFE sheet material cannot be effectively controlled, the Z-CTE of the PTFE sheet material is usually over 200 ppm/DEG C, the CTE of copper is 17 ppm/DEG C, and when the reliability of the PTFE sheet material is tested through cold and hot cycles, the fracture of copper in an electroplated through hole due to material expansion and contraction starts to occur at about one to two hundred cycles at-40 ℃ to 125 ℃.
The cold-hot cycle actually verifies the long-term reliability of the PCB under the temperature changes of the external environment such as morning, evening, day and night. The cold and hot cycle performance is poor, which means that the reliability of long-term use in the future is not guaranteed. And as the service life is prolonged, the probability of the rupture open circuit of the plated through hole is higher and higher, even 100% open circuit, and the circuit is failed.
There is no good solution to this problem in the industry, and the number of design vias can only be increased passively to delay the time for circuit failure.
Disclosure of Invention
In view of the above, the invention provides a plated through hole processing method for improving reliability of a 5G high-frequency material, which can effectively solve the problem of reliability of hole copper fracture caused by overhigh Z-CTE expansion and contraction during a cold and hot cycle test of a plated through hole of a PTFE-based PCB.
The technical scheme of the invention is as follows:
a plated through hole processing method for improving reliability of a 5G high-frequency material is characterized by comprising the following steps:
s1, after a metallized through hole is formed by drilling and electroplating, filling resin/copper slurry into the hole;
s2, after the resin is cured, secondary drilling is carried out by using a drill bit with the diameter being 0.2-0.4mm smaller than the original diameter, and a drill hole is formed in the filled resin;
and S3, electroplating the through hole after the second drilling, wherein the resin/copper paste is wrapped and sandwiched by the secondary hole copper electroplating layer, and the resin/copper paste is used as the buffer of the secondary hole copper electroplating layer.
In the process production in the prior art, the via hole is opened after the deformation fatigue fracture of the hole copper is caused by the expansion and contraction stress change generated by the alternating of cold and heat. In the invention, after the primary hole copper is broken, the secondary hole copper can also ensure the interconnection of the via holes, and the stress can not act on the secondary hole copper because of the interval between the primary hole copper and the hole plugging resin.
In the invention, due to the buffer of the resin/copper paste, even if the expansion and contraction stress of the PTFE substrate breaks the first hole copper, the expansion and contraction stress does not continuously act on the second hole copper, so that the reliability of the via connection can be ensured.
Further, in the step S3, the electroplating process adopts an electroplating composition comprising the following components in parts by weight:
35-67 parts of ureylene based polymer, 23-38 parts of aminocarboxylic acid functionalized by polyalkylene glycol residue, 16-24 parts of aminocarboxylic acid functionalized by polyalkyleneimine residue, 9-22 parts of aminocarboxylic acid functionalized by polyvinyl alcohol residue, 12-28 parts of peptide functionalized by polyalkylene glycol residue, 8-16 parts of peptide functionalized by polyalkyleneimine residue and peptide functionalized by polyvinyl alcohol residue, 55-95 parts of copper sulfate pentahydrate, 25-32 parts of sulfuric acid and 9-19 parts of inhibitor.
Further, in the step S3, the electroplating process adopts an electroplating composition comprising the following components in parts by weight:
ureylene polymers 42-58, aminocarboxylic acids functionalized with polyalkylene glycol residues 25-33, aminocarboxylic acids functionalized with polyalkylene imine residues 18-22, aminocarboxylic acids functionalized with polyvinyl alcohol residues 14-18, peptides functionalized with polyalkylene glycol residues 18-26, peptides functionalized with polyalkylene imine residues and peptides functionalized with polyvinyl alcohol residues 10-13, copper sulfate pentahydrate 68-84, sulfuric acid 28-30, inhibitors 12-17.
Further, in the step S3, the electroplating process adopts an electroplating composition comprising the following components in parts by weight:
ureylene polymer 49, aminocarboxylic acid 29 functionalized with polyalkylene glycol residues, aminocarboxylic acid 20 functionalized with polyalkyleneimine residues, aminocarboxylic acid 16 functionalized with polyvinyl alcohol residues, peptide 23 functionalized with polyalkylene glycol residues, peptide functionalized with polyalkylene imine residues and peptide 11 functionalized with polyvinyl alcohol residues, copper sulfate pentahydrate 78, sulfuric acid 29, inhibitor 14.
The electroplating composition can delay the falling off of the anode mud and prolong the anode cleaning period.
Further, the inhibitor is selected from one or more of polyalkylene glycol compounds, alkoxy naphthol, poly (ethylene glycol-propylene glycol) random copolymer, poly (polyethylene glycol-polypropylene glycol-polyethylene glycol) block copolymer and poly (polypropylene glycol-polyethylene glycol-polypropylene glycol) block copolymer.
Further, in step S3, the electroplating method includes the following steps:
s31, providing a substrate comprising a blind micropore and a patterned resist layer with an opening for forming a groove;
s32, operating the substrate as a cathode to enable the substrate to be in contact with at least one anode, and enabling the substrate to be in contact with the electroplating composition; s33, applying a current to the substrate, the current comprising at least one current pulse period consisting of one forward current pulse and one reverse current pulse, and wherein in the at least one current pulse period, the fraction of reverse charge to forward charge applied to the substrate is in the range of 0.1% to 5%.
Further, the duration of the forward current pulse is in the range of 10ms to 1000ms in the at least one current pulse period.
Further, the duration of the reverse current pulse is in the range of 0.05ms to 1ms in the at least one current pulse period.
Further, in the at least one current pulse period, the current density of the reverse current pulse is 20A/dm2To 100A/dm2Within the range of (1).
Further, during said at least one current pulse period, saidThe current density of the forward current pulse is 0.5A/dm2To 10A/dm2Within the range of (1).
The electroplating method can form compact and compact copper-plated through holes with excellent electric connection performance.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the detailed description and specific examples, while indicating the scope of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention.
Example 1
A plated through hole processing method for improving reliability of a 5G high-frequency material is characterized by comprising the following steps:
s1, after a metallized through hole is formed by drilling and electroplating, filling resin/copper slurry into the hole;
s2, after the resin is cured, secondary drilling is carried out by using a drill bit with the diameter smaller than the original diameter by 0.3mm, and a drill hole is formed in the filled resin;
and S3, electroplating the through hole after the second drilling, wherein the resin/copper paste is wrapped and sandwiched by the secondary hole copper electroplating layer, and the resin/copper paste is used as the buffer of the secondary hole copper electroplating layer.
In the process production in the prior art, the via hole is opened after the deformation fatigue fracture of the hole copper is caused by the expansion and contraction stress change generated by the alternating of cold and heat. In the invention, after the primary hole copper is broken, the secondary hole copper can also ensure the interconnection of the via holes, and the stress can not act on the secondary hole copper because of the interval between the primary hole copper and the hole plugging resin.
In the invention, due to the buffer of the resin/copper paste, even if the expansion and contraction stress of the PTFE substrate breaks the first hole copper, the expansion and contraction stress does not continuously act on the second hole copper, so that the reliability of the via connection can be ensured.
Further, in the step S3, the electroplating process adopts an electroplating composition comprising the following components in parts by weight:
ureylene polymer 49, aminocarboxylic acid 29 functionalized with polyalkylene glycol residues, aminocarboxylic acid 20 functionalized with polyalkyleneimine residues, aminocarboxylic acid 16 functionalized with polyvinyl alcohol residues, peptide 23 functionalized with polyalkylene glycol residues, peptide functionalized with polyalkylene imine residues and peptide 11 functionalized with polyvinyl alcohol residues, copper sulfate pentahydrate 78, sulfuric acid 29, inhibitor 14.
The electroplating composition can delay the falling off of the anode mud and prolong the anode cleaning period.
Further, the inhibitor is selected from polyalkylene glycol compounds.
Further, in step S3, the electroplating method includes the following steps:
s31, providing a substrate comprising a blind micropore and a patterned resist layer with an opening for forming a groove;
s32, operating the substrate as a cathode to enable the substrate to be in contact with at least one anode, and enabling the substrate to be in contact with the electroplating composition; s33, applying a current to the substrate, the current comprising at least one current pulse period consisting of one forward current pulse and one reverse current pulse, and wherein in the at least one current pulse period, the fraction of reverse charge to forward charge applied to the substrate is 2.2%.
Further, in the at least one current pulse period, the duration of the forward current pulse is 500 ms.
Further, in the at least one current pulse period, the duration of the reverse current pulse is 0.5 ms.
Further, the current density of the reverse current pulse is 65A/dm in the at least one current pulse period2。
Further, the current density of the forward current pulse is 5A/dm in the at least one current pulse period2。
The electroplating method can form compact and compact copper-plated through holes with excellent electric connection performance.
Example 2
A plated through hole processing method for improving reliability of a 5G high-frequency material is characterized by comprising the following steps:
s1, after a metallized through hole is formed by drilling and electroplating, filling resin/copper slurry into the hole;
s2, after the resin is cured, secondary drilling is carried out by using a drill bit with the diameter smaller than the original diameter by 0.2mm, and a drill hole is formed in the filled resin;
and S3, electroplating the through hole after the second drilling, wherein the resin/copper paste is wrapped and sandwiched by the secondary hole copper electroplating layer, and the resin/copper paste is used as the buffer of the secondary hole copper electroplating layer.
In the process production in the prior art, the via hole is opened after the deformation fatigue fracture of the hole copper is caused by the expansion and contraction stress change generated by the alternating of cold and heat. In the invention, after the primary hole copper is broken, the secondary hole copper can also ensure the interconnection of the via holes, and the stress can not act on the secondary hole copper because of the interval between the primary hole copper and the hole plugging resin.
In the invention, due to the buffer of the resin/copper paste, even if the expansion and contraction stress of the PTFE substrate breaks the first hole copper, the expansion and contraction stress does not continuously act on the second hole copper, so that the reliability of the via connection can be ensured.
Further, in the step S3, the electroplating process adopts an electroplating composition comprising the following components in parts by weight:
ureylene polymer 42, aminocarboxylic acid 25 functionalized with polyalkylene glycol residues, aminocarboxylic acid 18 functionalized with polyalkyleneimine residues, aminocarboxylic acid 14 functionalized with polyvinyl alcohol residues, peptide 18 functionalized with polyalkylene glycol residues, peptide functionalized with polyalkylene imine residues and peptide 10 functionalized with polyvinyl alcohol residues, copper sulfate pentahydrate 68, sulfuric acids 28-30, inhibitor 12.
The electroplating composition can delay the falling off of the anode mud and prolong the anode cleaning period.
Further, the inhibitor is selected from poly (polyethylene glycol-polypropylene glycol-polyethylene glycol) block copolymers.
Further, in step S3, the electroplating method includes the following steps:
s31, providing a substrate comprising a blind micropore and a patterned resist layer with an opening for forming a groove;
s32, operating the substrate as a cathode to enable the substrate to be in contact with at least one anode, and enabling the substrate to be in contact with the electroplating composition; s33, applying a current to the substrate, the current comprising at least one current pulse period consisting of one forward current pulse and one reverse current pulse, and wherein in the at least one current pulse period, the fraction of reverse charge to forward charge applied to the substrate is 0.1%.
Further, in the at least one current pulse period, the duration of the forward current pulse is 1000 ms.
Further, in the at least one current pulse period, the duration of the reverse current pulse is 1 ms.
Further, the current density of the reverse current pulse is 20A/dm in the at least one current pulse period2。
Further, in the at least one current pulse period, the current density of the forward current pulse is 0.5A/dm2And (4) obtaining.
The electroplating method can form compact and compact copper-plated through holes with excellent electric connection performance.
Example 3
A plated through hole processing method for improving reliability of a 5G high-frequency material is characterized by comprising the following steps:
s1, after a metallized through hole is formed by drilling and electroplating, filling resin/copper slurry into the hole;
s2, after the resin is cured, secondary drilling is carried out by using a drill bit with the diameter smaller than the original diameter by 0.4mm, and a drill hole is formed in the filled resin;
and S3, electroplating the through hole after the second drilling, wherein the resin/copper paste is wrapped and sandwiched by the secondary hole copper electroplating layer, and the resin/copper paste is used as the buffer of the secondary hole copper electroplating layer.
In the process production in the prior art, the via hole is opened after the deformation fatigue fracture of the hole copper is caused by the expansion and contraction stress change generated by the alternating of cold and heat. In the invention, after the primary hole copper is broken, the secondary hole copper can also ensure the interconnection of the via holes, and the stress can not act on the secondary hole copper because of the interval between the primary hole copper and the hole plugging resin.
In the invention, due to the buffer of the resin/copper paste, even if the expansion and contraction stress of the PTFE substrate breaks the first hole copper, the expansion and contraction stress does not continuously act on the second hole copper, so that the reliability of the via connection can be ensured.
Further, in the step S3, the electroplating process adopts an electroplating composition comprising the following components in parts by weight:
ureylene polymer 58, aminocarboxylic acid 33 functionalized with polyalkylene glycol residues, aminocarboxylic acid 22 functionalized with polyalkyleneimine residues, aminocarboxylic acid 18 functionalized with polyvinyl alcohol residues, peptide 26 functionalized with polyalkylene glycol residues, peptide functionalized with polyalkylene imine residues and peptide 13 functionalized with polyvinyl alcohol residues, copper sulfate pentahydrate 84, sulfuric acid 30, inhibitor 17.
The electroplating composition can delay the falling off of the anode mud and prolong the anode cleaning period.
Further, the inhibitor is selected from poly (polypropylene glycol-polyethylene glycol-polypropylene glycol) block copolymers.
Further, in step S3, the electroplating method includes the following steps:
s31, providing a substrate comprising a blind micropore and a patterned resist layer with an opening for forming a groove;
s32, operating the substrate as a cathode to enable the substrate to be in contact with at least one anode, and enabling the substrate to be in contact with the electroplating composition; s33, applying a current to the substrate, the current comprising at least one current pulse period consisting of one forward current pulse and one reverse current pulse, and wherein in the at least one current pulse period the fraction of reverse charge to forward charge applied to the substrate is 5%.
Further, the duration of the forward current pulse is 10ms in the at least one current pulse period.
Further, in the at least one current pulse period, the duration of the reverse current pulse is 0.05 ms.
Further, during said at least one current pulse period, said reverse currentCurrent density of flow pulse 100A/dm2。
Further, the current density of the forward current pulse is 10A/dm in the at least one current pulse period2。
The electroplating method can form compact and compact copper-plated through holes with excellent electric connection performance.
Example 4
A plated through hole processing method for improving reliability of a 5G high-frequency material is characterized by comprising the following steps:
s1, after a metallized through hole is formed by drilling and electroplating, filling resin/copper slurry into the hole;
s2, after the resin is cured, secondary drilling is carried out by using a drill bit with the diameter smaller than the original diameter by 0.25mm, and a drill hole is formed in the filled resin;
and S3, electroplating the through hole after the second drilling, wherein the resin/copper paste is wrapped and sandwiched by the secondary hole copper electroplating layer, and the resin/copper paste is used as the buffer of the secondary hole copper electroplating layer.
In the process production in the prior art, the via hole is opened after the deformation fatigue fracture of the hole copper is caused by the expansion and contraction stress change generated by the alternating of cold and heat. In the invention, after the primary hole copper is broken, the secondary hole copper can also ensure the interconnection of the via holes, and the stress can not act on the secondary hole copper because of the interval between the primary hole copper and the hole plugging resin.
In the invention, due to the buffer of the resin/copper paste, even if the expansion and contraction stress of the PTFE substrate breaks the first hole copper, the expansion and contraction stress does not continuously act on the second hole copper, so that the reliability of the via connection can be ensured.
Further, in the step S3, the electroplating process adopts an electroplating composition comprising the following components in parts by weight:
ureylene polymer 35, aminocarboxylic acid 23 functionalized with polyalkylene glycol residues, aminocarboxylic acid 16 functionalized with polyalkyleneimine residues, aminocarboxylic acid 9 functionalized with polyvinyl alcohol residues, peptide 12 functionalized with polyalkylene glycol residues, peptide functionalized with polyalkylene imine residues and peptide 8 functionalized with polyvinyl alcohol residues, copper sulfate pentahydrate 55, sulfuric acid 25, inhibitor 9.
The electroplating composition can delay the falling off of the anode mud and prolong the anode cleaning period.
Further, the inhibitor is selected from alkoxy naphthol.
Further, in step S3, the electroplating method includes the following steps:
s31, providing a substrate comprising a blind micropore and a patterned resist layer with an opening for forming a groove;
s32, operating the substrate as a cathode to enable the substrate to be in contact with at least one anode, and enabling the substrate to be in contact with the electroplating composition; s33, applying a current to the substrate, the current comprising at least one current pulse period consisting of one forward current pulse and one reverse current pulse, and wherein in the at least one current pulse period, the fraction of reverse charge to forward charge applied to the substrate is in the range of 0.1% to 5%.
Further, the duration of the forward current pulse is in the range of 10ms to 1000ms in the at least one current pulse period.
Further, the duration of the reverse current pulse is in the range of 0.05ms to 1ms in the at least one current pulse period.
Further, in the at least one current pulse period, the current density of the reverse current pulse is 20A/dm2To 100A/dm2Within the range of (1).
Further, in the at least one current pulse period, the current density of the forward current pulse is 0.5A/dm2To 10A/dm2Within the range of (1).
The electroplating method can form compact and compact copper-plated through holes with excellent electric connection performance.
Example 5
A plated through hole processing method for improving reliability of a 5G high-frequency material is characterized by comprising the following steps:
s1, after a metallized through hole is formed by drilling and electroplating, filling resin/copper slurry into the hole;
s2, after the resin is cured, secondary drilling is carried out by using a drill bit with the diameter smaller than the original diameter by 0.35mm, and a drill hole is formed in the filled resin;
and S3, electroplating the through hole after the second drilling, wherein the resin/copper paste is wrapped and sandwiched by the secondary hole copper electroplating layer, and the resin/copper paste is used as the buffer of the secondary hole copper electroplating layer.
In the process production in the prior art, the via hole is opened after the deformation fatigue fracture of the hole copper is caused by the expansion and contraction stress change generated by the alternating of cold and heat. In the invention, after the primary hole copper is broken, the secondary hole copper can also ensure the interconnection of the via holes, and the stress can not act on the secondary hole copper because of the interval between the primary hole copper and the hole plugging resin.
In the invention, due to the buffer of the resin/copper paste, even if the expansion and contraction stress of the PTFE substrate breaks the first hole copper, the expansion and contraction stress does not continuously act on the second hole copper, so that the reliability of the via connection can be ensured.
Further, in the step S3, the electroplating process adopts an electroplating composition comprising the following components in parts by weight:
ureylene polymer 67, aminocarboxylic acid 38 functionalized with polyalkylene glycol residues, aminocarboxylic acid 24 functionalized with polyalkyleneimine residues, aminocarboxylic acid 22 functionalized with polyvinyl alcohol residues, peptide 28 functionalized with polyalkylene glycol residues, peptide functionalized with polyalkyleneimine residues and peptide 16 functionalized with polyvinyl alcohol residues, copper sulfate pentahydrate 95, sulfuric acid 32, inhibitor 19.
The electroplating composition can delay the falling off of the anode mud and prolong the anode cleaning period.
Further, the inhibitor is selected from poly (ethylene glycol-propylene glycol) random copolymer.
Further, in step S3, the electroplating method includes the following steps:
s31, providing a substrate comprising a blind micropore and a patterned resist layer with an opening for forming a groove;
s32, operating the substrate as a cathode to enable the substrate to be in contact with at least one anode, and enabling the substrate to be in contact with the electroplating composition; s33, applying a current to the substrate, the current comprising at least one current pulse period consisting of one forward current pulse and one reverse current pulse, and wherein in the at least one current pulse period, the fraction of reverse charge to forward charge applied to the substrate is in the range of 0.1% to 5%.
Further, the duration of the forward current pulse is in the range of 10ms to 1000ms in the at least one current pulse period.
Further, the duration of the reverse current pulse is in the range of 0.05ms to 1ms in the at least one current pulse period.
Further, in the at least one current pulse period, the current density of the reverse current pulse is 20A/dm2To 100A/dm2Within the range of (1).
Further, in the at least one current pulse period, the current density of the forward current pulse is 0.5A/dm2To 10A/dm2Within the range of (1).
The electroplating method can form compact and compact copper-plated through holes with excellent electric connection performance.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art. It should be noted that the technical features not described in detail in the present invention can be implemented by any prior art in the field.

Claims (10)

1. A plated through hole processing method for improving reliability of a 5G high-frequency material is characterized by comprising the following steps:
s1, after a metallized through hole is formed by drilling and electroplating, filling resin/copper slurry into the hole;
s2, after the resin is cured, secondary drilling is carried out by using a drill bit with the diameter being 0.2-0.4mm smaller than the original diameter, and a drill hole is formed in the filled resin;
and S3, electroplating the through hole after the second drilling, wherein the resin/copper paste is wrapped and sandwiched by the secondary hole copper electroplating layer, and the resin/copper paste is used as the buffer of the secondary hole copper electroplating layer.
2. The method for processing the 5G high-frequency material plated through hole with the improved reliability as claimed in claim 1, wherein in the step S3, the electroplating process adopts an electroplating composition comprising the following components in parts by weight:
35-67 parts of ureylene based polymer, 23-38 parts of aminocarboxylic acid functionalized by polyalkylene glycol residue, 16-24 parts of aminocarboxylic acid functionalized by polyalkyleneimine residue, 9-22 parts of aminocarboxylic acid functionalized by polyvinyl alcohol residue, 12-28 parts of peptide functionalized by polyalkylene glycol residue, 8-16 parts of peptide functionalized by polyalkyleneimine residue and peptide functionalized by polyvinyl alcohol residue, 55-95 parts of copper sulfate pentahydrate, 25-32 parts of sulfuric acid and 9-19 parts of inhibitor.
3. The method for processing the 5G high-frequency material plated through hole with the improved reliability as claimed in claim 2, wherein in the step S3, the electroplating process adopts an electroplating composition comprising the following components in parts by weight:
ureylene polymers 42-58, aminocarboxylic acids functionalized with polyalkylene glycol residues 25-33, aminocarboxylic acids functionalized with polyalkylene imine residues 18-22, aminocarboxylic acids functionalized with polyvinyl alcohol residues 14-18, peptides functionalized with polyalkylene glycol residues 18-26, peptides functionalized with polyalkylene imine residues and peptides functionalized with polyvinyl alcohol residues 10-13, copper sulfate pentahydrate 68-84, sulfuric acid 28-30, inhibitors 12-17.
4. The method for processing the 5G high-frequency material plated through hole with the improved reliability as claimed in claim 3, wherein in the step S3, the electroplating process adopts an electroplating composition comprising the following components in parts by weight:
ureylene polymer 49, aminocarboxylic acid 29 functionalized with polyalkylene glycol residues, aminocarboxylic acid 20 functionalized with polyalkyleneimine residues, aminocarboxylic acid 16 functionalized with polyvinyl alcohol residues, peptide 23 functionalized with polyalkylene glycol residues, peptide functionalized with polyalkylene imine residues and peptide 11 functionalized with polyvinyl alcohol residues, copper sulfate pentahydrate 78, sulfuric acid 29, inhibitor 14.
5. The method for processing a 5G high-frequency material plated through hole with improved reliability according to any one of claims 2 to 4, wherein the inhibitor is one or more selected from the group consisting of polyalkylene glycol compounds, alkoxynaphthols, poly (ethylene glycol-propylene glycol) random copolymers, poly (polyethylene glycol-polypropylene glycol-polyethylene glycol) block copolymers, and poly (polypropylene glycol-polyethylene glycol-polypropylene glycol) block copolymers.
6. The method for processing a 5G high-frequency material plated through hole with improved reliability according to claim 5, wherein in the step S3, the electroplating method comprises the following steps:
s31, providing a substrate comprising a blind micropore and a patterned resist layer with an opening for forming a groove;
s32, operating the substrate as a cathode to enable the substrate to be in contact with at least one anode, and enabling the substrate to be in contact with the electroplating composition; s33, applying a current to the substrate, the current comprising at least one current pulse period consisting of one forward current pulse and one reverse current pulse, and wherein in the at least one current pulse period, the fraction of reverse charge to forward charge applied to the substrate is in the range of 0.1% to 5%.
7. The 5G high-frequency material reliability-improved plated through hole processing method according to claim 6, wherein in the at least one current pulse period, the duration of the forward current pulse is in a range from 10ms to 1000 ms.
8. The 5G high-frequency material reliability-improved plated through hole processing method according to claim 7, wherein in the at least one current pulse period, the duration of the reverse current pulse is in a range of 0.05ms to 1 ms.
9. The method for processing a 5G high frequency material through plated hole with improved reliability as claimed in claim 8, wherein the current density of the reverse current pulse in the at least one current pulse period is in the range of 20A/dm2 to 100A/dm 2.
10. The method for processing a 5G high frequency material through plated hole with improved reliability as claimed in claim 9, wherein the current density of the forward current pulse in the at least one current pulse period is in the range of 0.5A/dm 2 to 10A/dm 2.
CN202010074291.4A 2020-01-22 2020-01-22 Plated through hole processing method for improving reliability of 5G high-frequency material Pending CN111246671A (en)

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CN114222424A (en) * 2021-12-10 2022-03-22 信利光电股份有限公司 Rigid-flex board via hole connection structure

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JP2001144397A (en) * 1999-11-11 2001-05-25 Ibiden Co Ltd Structure of filled hole in wiring board and manufacturing method therefor
CN204090285U (en) * 2014-09-12 2015-01-07 杭州华三通信技术有限公司 Circuit board and via structure thereof
CN105683421A (en) * 2013-10-22 2016-06-15 德国艾托特克公司 Copper electroplating method

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JP2001144397A (en) * 1999-11-11 2001-05-25 Ibiden Co Ltd Structure of filled hole in wiring board and manufacturing method therefor
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CN204090285U (en) * 2014-09-12 2015-01-07 杭州华三通信技术有限公司 Circuit board and via structure thereof

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CN114222424A (en) * 2021-12-10 2022-03-22 信利光电股份有限公司 Rigid-flex board via hole connection structure
CN114222424B (en) * 2021-12-10 2023-10-13 信利光电股份有限公司 Soft and hard combined board via hole connection structure

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