CN111246134A - Anti-dispersion method of image sensor and image sensor - Google Patents
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Abstract
An anti-dispersion method of an image sensor and the image sensor. The anti-dispersion method is suitable for a CMOS image sensor, each pixel unit of the CMOS image sensor comprises an N-type transistor, the N-type transistor comprises a grid electrode and a drain electrode, and the drain electrode comprises a first electrode and a second electrode; the anti-dispersion method comprises the following steps: applying a first anti-blooming signal to the drain of the N-type transistor, wherein the first anti-blooming signal is at a high level; applying a second anti-blooming signal to the first electrode of the N-type transistor, wherein the second anti-blooming signal is a periodic signal during exposure and transfer of an image; and in one period of the second anti-dispersion signal, the second anti-dispersion signal is at a first level in a first time period and at a second level in a second time period, and the period of the second anti-dispersion signal is smaller than the exposure and transfer period. The method reduces dark current and improves output image quality.
Description
Technical Field
The invention relates to the field of integrated circuits, in particular to an anti-dispersion method of an image sensor and the image sensor.
Background
Image sensors are traditionally designed and fabricated using a Charge Coupled Device (CCD) process. In the 1990's, 1980-. However, the use of CCDs in the consumer area was rapidly replaced by Complementary Metal Oxide Semiconductor (CMOS) technology after 2005. The existing CCD production lines are shut down by lots of customs factories, so far, few CCD production lines are left all over the world. However, the design and fabrication of TDI image sensors has, until now, used in part the CCD process, since the operating principle of TDI image sensors depends on the way the CCD operates.
In view of the exit of the CCD process line, some companies studied embedding a device with a CCD-like function on a CMOS process, called embedded CCD (eCCD), to fabricate a TDI image sensor from 2012 onwards. The image sensor is based on a CMOS process, so the image sensor is called a TDI-CMOS image sensor, and the core of the image sensor is eCCD. In comparison, the image sensor based on the CCD process is called a delay integration CMOS (TDI-CCD) image sensor.
Each CCD pixel cell includes 4 polysilicon electrodes, and under strong light conditions, electrons in the channel under the electrode reach the full well and then overflow to the adjacent electrode or channel, which is called Blooming. The diffusion phenomenon can generate interference on adjacent channels, so that the number of electrons of the adjacent channels is increased, the pixel output is increased, and the output image has halo.
Therefore, an anti-dispersion method is needed to solve the problem that the overflow of the electrons after the full well interferes with the adjacent electrode or channel under the strong light condition.
Disclosure of Invention
In order to solve the above problem, an embodiment of the present invention provides an anti-blooming method for an image sensor, which is applicable to a CMOS image sensor, where each pixel unit of the CMOS image sensor includes an N-type transistor, the N-type transistor includes a gate and a drain, and the drain includes a first electrode and a second electrode; the anti-dispersion method comprises the following steps: applying a first anti-dispersion signal on the drain electrode of the N-type transistor, wherein the first anti-dispersion signal is at a high level; applying a second anti-blooming signal to the first electrode of the N-type transistor, wherein the second anti-blooming signal is a periodic signal during the exposure and transfer period of the image; and in one period of the second anti-dispersion signal, the second anti-dispersion signal is at a first level in a first time period and at a second level in a second time period, and the period of the second anti-dispersion signal is smaller than the exposure and transfer period.
Optionally, the exposure and transfer period of the image comprises: the interval between two adjacent sampling levels.
Optionally, the first level is a high level, and the second level is a low level.
Optionally, the first level is a low level, and the second level is a high level.
Optionally, the duration of the first time period and the second time period is adjustable.
The embodiment of the invention also provides an image sensor, wherein each pixel unit of the image sensor comprises an N-type transistor, and the N-type transistor comprises a grid electrode and a drain electrode; the grid electrode comprises a first electrode and a second electrode; the first electrode is suitable for applying a first anti-dispersion signal, and the drain electrode is suitable for applying a second anti-dispersion signal; the image sensor further includes: the first anti-dispersion signal generation device is suitable for outputting a first anti-dispersion signal to the drain electrode of the N-type transistor, and the first anti-dispersion signal is at a high level; the second anti-dispersion signal generating device is suitable for outputting a second anti-dispersion signal to the first electrode of the N-type transistor, and the second anti-dispersion signal is a periodic signal in the exposure and transfer period of the image; and in one period of the second anti-dispersion signal, the second anti-dispersion signal is at a first level in a first time period and at a second level in a second time period, and the period of the second anti-dispersion signal is smaller than the exposure and transfer period.
Optionally, the exposure and transfer period of the image comprises: the interval between two adjacent sampling levels.
Optionally, the first level is a high level, and the second level is a low level.
Optionally, the first level is a low level, and the second level is a high level.
Optionally, the duration of the first time period and the second time period is adjustable.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following advantages:
the method comprises the steps of applying a first anti-dispersion signal to a source electrode or a drain electrode of an N-type transistor, wherein the first anti-dispersion signal is high in level, applying a second anti-dispersion signal to a grid electrode of the N-type transistor, and enabling the second anti-dispersion signal to be a periodic signal in the exposure and transfer period of an image. Under the time sequence mode of the anti-dispersion signal, the image sensor not only obtains the anti-dispersion function, but also can effectively inhibit the defect states of the surfaces of silicon (Si) and silicon dioxide (SiO2) below the channel, thereby reducing dark current and improving the quality of output images.
Drawings
Fig. 1 is a schematic diagram of a pixel structure of eCCD in the prior art;
FIG. 2 is a schematic diagram of the driving voltage of eCCD 4 electrodes and the charge transfer in the channel in the prior art;
fig. 3 is a diagram illustrating the diffusion phenomenon of eCCD in the prior art;
fig. 4 is a layout of a pixel structure of an image sensor in the related art;
FIG. 5 is a schematic cross-sectional view of a pixel structure of an image sensor in the prior art;
FIG. 6 is a timing diagram of an anti-aliasing signal in the prior art;
FIG. 7 is a schematic flow chart of an anti-diffusion method according to an embodiment of the present invention;
FIG. 8 is a timing diagram of an anti-aliasing signal according to an embodiment of the invention;
FIG. 9 is a timing diagram of an anti-aliasing signal according to an embodiment of the invention; and
fig. 10 is a layout of a pixel structure of an image sensor according to an embodiment of the present invention.
Detailed Description
Referring to fig. 1, fig. 1 is a schematic diagram of a pixel structure of eCCD in the prior art. The pixel structure of the eCCD is applied to a TDI-CMOS image sensor. Each CCD pixel cell includes 4 polysilicon electrodes PH1-PH4(POLY), and the 4 polysilicon electrodes PH1-PH4 do not overlap each other. Below the polysilicon electrode POLY is a gate oxide SiO2, below which is silicon into which N-type ions are implanted to form a channel PDN on the substrate P-epi.
Referring to fig. 2, fig. 2 is a schematic diagram of driving voltages and charge transfer in a channel of eCCD 4 electrodes in the prior art. If the channel is an N-type channel, the charge in the channel is electrons. In fig. 2(a), different driving voltages are applied to the four polysilicon electrodes PH1-PH4, thereby allowing charges in the channel to be transferred in a certain direction. FIG. 2(b) shows the charge transport in the channel at time T1-T5.
Under strong light conditions, electrons in the channel under the electrode reach the full well and then overflow to the adjacent electrode or channel, which is called Blooming (Blooming), as shown in fig. 3. The diffusion phenomenon can generate interference on adjacent channels, so that the number of electrons of the adjacent channels is increased, the pixel output is increased, and the output image has halo.
To solve the blooming phenomenon, fig. 4 shows a layout of a pixel structure of an image sensor. The image sensor may be a TDI-CMOS image sensor. The pixel unit of the image sensor comprises an N-type transistor. Specifically, the image sensor comprises a gate, an N-type ion implantation area PDN1, a source drain implantation area S/D1 (namely the drain of the N-type transistor), an active area Activearea1 and a channel isolation STI1 among pixel units.
In some embodiments, the gate includes a first electrode POLY11 and a second electrode POLY 12. The first electrode POLY11 and the second electrode POLY12 may be polysilicon electrodes. Specifically, the first electrode POLY11 is adapted to adjust the barrier height thereunder according to the applied voltage, and the second electrode POLY12 is adapted to transport electrons within the ion implantation region according to the applied voltage. The source-drain implantation region S/D1 and the first electrode POLY11 receive a first anti-blooming signal VDAB1 and a second anti-blooming signal VCAB1, respectively.
Referring to fig. 4 and fig. 5 in combination, fig. 5 is a schematic cross-sectional view of a pixel structure of an image sensor in the prior art. The first anti-blooming signal VDAB1 is applied to the source drain implant region S/D1. The second anti-dispersion signal VDAB1 is applied to the first electrode POLY 11.
In the prior art, in order to realize the anti-dispersion function, the first anti-dispersion signal VDAB1 and the second anti-dispersion signal VCAB1 are always kept at a high level. Fig. 6 can be referred to as a timing diagram of a specific anti-aliasing signal. The sampling signal is a control signal for sampling the pixel unit by the sampling circuit. When the second anti-blooming signal VCAB1 is at a high level, a channel may be formed under the first electrode POLY11 so that overflowing electric charges enter the source-drain injection region S/D1 and are absorbed by the first anti-blooming signal VDAB 1.
However, when the second anti-blooming signal VCAB1 is in a high state, the channel surface is completely in a depletion state, and defects on the Si and SiO2 surfaces easily generate electron-hole pairs, which generate a large dark current and deteriorate image quality. When the first anti-blooming signal VCAB1 is in a low level state, the generated dark current is small, but the anti-blooming function cannot be realized.
Referring to fig. 7, fig. 7 is a schematic flow chart of an anti-diffusion method according to an embodiment of the present invention. The anti-dispersion method is suitable for a CMOS image sensor, and the image sensor can be a TDI-CMOS image sensor. Each pixel unit of the CMOS image sensor comprises an N-type transistor, wherein the N-type transistor comprises a grid electrode and a drain electrode, and the drain electrode comprises a first electrode and a second electrode. The anti-dispersion method comprises the following steps:
in S11, a first anti-blooming signal is applied to the drain of the N-type transistor, and the first anti-blooming signal is at a high level.
In S12, a second anti-blooming signal is applied to the first electrode of the N-type transistor, the second anti-blooming signal being a periodic signal during exposure and transfer of an image.
It should be noted that S11 and S12 do not have a sequential execution order, that is, a first anti-blooming signal is applied to the drain of the N-type transistor, and a second anti-blooming signal is also applied to the first electrode of the N-type transistor.
In some embodiments, the second anti-blooming signal has a first level for a first period of time and a second level for a second period of time within one period of the second anti-blooming signal, and the period of the second anti-blooming signal is smaller than the exposure and transfer period.
In some embodiments, the second anti-blooming signal may be a periodic pulsed signal.
In some embodiments, the exposure and transfer period of the image comprises: the interval between two adjacent sampling levels.
Referring to fig. 8, fig. 8 is a timing diagram of an anti-aliasing signal according to an embodiment of the present invention.
In the embodiment shown in fig. 8, the first anti-blooming signal VDAB2 is always kept high when the image sensor is implementing the anti-blooming function. And for the second anti-dispersion signal VCAB2, the first level is high and the second level is low. That is, during the exposure and transfer, the second anti-dispersion signal VCAB2 is at a high level for a first period t1 and at a low level for a second period. The second anti-dispersion signal VCAB2 remains low outside the exposure and transfer periods.
By adjusting the voltage value of VCAB, and thus the height of the potential barrier below the first electrode POLY11, a corresponding full-well capacity is obtained, so as to avoid the occurrence of the blooming phenomenon.
The pulse period of the second anti-dispersion signal VCAB2 is T, and the number of high-level pulses in one exposure and transfer period is n.
In some embodiments, the first time period and the duration of the first time period are adjustable. That is, the pulse period T of the second anti-dispersion signal VCAB2 can be adjusted according to actual needs.
Referring to fig. 9, fig. 9 is a timing diagram of an anti-aliasing signal according to an embodiment of the invention.
In the embodiment shown in fig. 9, the first anti-blooming signal VDAB2 is always kept high when the image sensor is implementing the anti-blooming function. And for the second anti-dispersion signal VCAB2, the first level is low and the second level is high. That is, during the exposure and transfer, the second anti-dispersion signal VCAB2 is at a low level for a first period t1 and at a high level for a second period. The second anti-dispersion signal VCAB2 remains high outside the exposure and transfer periods.
The pulse period of the second anti-dispersion signal VCAB2 is T, and the number of low-level pulses in one exposure and transfer period is n.
In some embodiments, the duration of the first time period and the second time period is adjustable. That is, the pulse period T of the second anti-dispersion signal VCAB can be adjusted according to actual needs.
By using the working timing of the above two anti-blooming signals, when the second anti-blooming signal VCAB is in a low level (negative pressure) state, the entire channel surface is in a hole accumulation state, and is filled with holes, so that a surface defect state is passivated, similar to a state of a clamped PhotoDiode (PPD), and then a dark current generated by the surface defect is very small. When the second anti-dispersion signal VCAB2 is in a high-level (positive-pressure) state, the surface of the channel is completely in a depletion state, and the defects on the surfaces of Si and SiO2 are easy to generate electron-hole pairs, but the high-voltage action time is discontinuous. This makes the defect state of Si and SiO2 surface generate electron-hole pairs, and the electron can not timely run into the eCCD channel PDN through diffusion and drift movement, and as the high level changes to the low level, the electron-hole pairs generated by the defect state recombine, and then the surface is in the hole accumulation state, and the surface defect state is passivated.
Therefore, under the time sequence mode of the anti-dispersion signal, the image sensor not only obtains the anti-dispersion function, but also can effectively inhibit the defect states of the surfaces of Si and SiO2 below the channel, thereby reducing dark current and improving the quality of output images.
Referring to fig. 10, fig. 10 is a layout of a pixel structure of an image sensor according to an embodiment of the present invention.
The embodiment of the invention also provides an image sensor, wherein each pixel unit of the image sensor comprises an N-type transistor, and each N-type transistor comprises a grid and a drain (a source-drain injection region S/D2 with the structure the same as that of the source-drain injection region S/D1 in the figure 5); the gate includes a first electrode POLY21 and a second electrode POLY 22. The first electrode POLY21 is adapted to adjust a barrier height thereunder according to an applied voltage, and the second electrode POLY22 is adapted to transport electrons within the ion implantation region according to the applied voltage. The source-drain implantation region S/D2 is adapted to apply a first anti-blooming signal VDAB2, and the first electrode POLY21 is adapted to apply a second anti-blooming signal VCAB 2.
The image sensor also comprises an N-type ion implantation area PDN2, an active area Activearea2 and a channel isolation STI2 between pixel units.
The image sensor further includes: the first anti-diffusion signal generating device 21 is suitable for outputting a first anti-diffusion signal VDAB2 to the source-drain implantation region S/D2, wherein the first anti-diffusion signal VDAB2 is at a high level; and a second anti-dispersion signal generating means 22 adapted to output a second anti-dispersion signal VCAB2, which is a periodic signal, to the plurality of the first electrodes POLY21 during exposure and transfer of an image.
In some embodiments, the second anti-blooming signal has a first level for a first period of time and a second level for a second period of time within one period of the second anti-blooming signal, and the period of the second anti-blooming signal is smaller than the exposure and transfer period.
In some embodiments, the exposure and transfer period of the image comprises: the interval between two adjacent sampling levels.
In some embodiments, the first level is a high level and the second level is a low level.
In some embodiments, the first level is a low level and the second level is a high level.
In some embodiments, the duration of the first time period and the second time period is adjustable. For more details on the image sensor, reference may be made to the above description, and further description is omitted here.
It should be noted that the anti-dispersion method can also be applied to other image sensors having anti-dispersion structures than the embodiment shown in fig. 10.
The anti-dispersion method can also be applied to 2-phase CCDs, 3-phase CCDs and 4-phase CCDs.
Those skilled in the art will appreciate that all or part of the steps in the methods of the above embodiments may be implemented by hardware related to instructions of a program, which may be stored in a computer-readable storage medium, and the storage medium may include: ROM, RAM, magnetic or optical disks, and the like.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. An anti-dispersion method of an image sensor is suitable for a CMOS image sensor, each pixel unit of the CMOS image sensor comprises an N-type transistor, the N-type transistor comprises a grid electrode and a drain electrode, and the drain electrode comprises a first electrode and a second electrode;
the method is characterized by comprising the following steps:
applying a first anti-dispersion signal on the drain electrode of the N-type transistor, wherein the first anti-dispersion signal is at a high level;
applying a second anti-blooming signal to the first electrode of the N-type transistor, wherein the second anti-blooming signal is a periodic signal during the exposure and transfer period of the image;
and in one period of the second anti-dispersion signal, the second anti-dispersion signal is at a first level in a first time period and at a second level in a second time period, and the period of the second anti-dispersion signal is smaller than the exposure and transfer period.
2. The method of claim 1, wherein the exposure and transfer period of the image comprises:
the interval between two adjacent sampling levels.
3. The method according to claim 1, wherein the first level is a high level and the second level is a low level.
4. The method according to claim 1, wherein the first level is a low level and the second level is a high level.
5. The method of claim 1, wherein the first and second time periods are adjustable in duration.
6. An image sensor, each pixel cell of the image sensor comprising an N-type transistor comprising a gate and a drain; the grid electrode comprises a first electrode and a second electrode; the first electrode is suitable for applying a first anti-dispersion signal, and the drain electrode is suitable for applying a second anti-dispersion signal; characterized in that the image sensor further comprises:
the first anti-dispersion signal generation device is suitable for outputting a first anti-dispersion signal to the drain electrode of the N-type transistor, and the first anti-dispersion signal is at a high level;
the second anti-dispersion signal generating device is suitable for outputting a second anti-dispersion signal to the first electrode of the N-type transistor, and the second anti-dispersion signal is a periodic signal in the exposure and transfer period of the image; wherein, in one period of the second anti-dispersion signal, the second anti-dispersion signal is at a first level in a first time period and at a second level in a second time period, and the period of the second anti-dispersion signal is smaller than the exposure and transfer period.
7. The anti-diffusion device according to claim 6, wherein the image exposure and transfer period comprises:
the interval between two adjacent sampling levels.
8. The anti-dispersion device according to claim 6, wherein the first level is a high level and the second level is a low level.
9. The anti-dispersion device according to claim 6, wherein the first level is a low level and the second level is a high level.
10. The anti-dispersion device according to claim 6, wherein the duration of the first period of time and the second period of time are adjustable.
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