CN111234721A - Heat dissipation buffer film - Google Patents
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- CN111234721A CN111234721A CN202010051047.6A CN202010051047A CN111234721A CN 111234721 A CN111234721 A CN 111234721A CN 202010051047 A CN202010051047 A CN 202010051047A CN 111234721 A CN111234721 A CN 111234721A
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/29—Laminated material
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/186—Preparation by chemical vapour deposition [CVD]
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2400/00—Presence of inorganic and organic materials
- C09J2400/10—Presence of inorganic materials
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2400/00—Presence of inorganic and organic materials
- C09J2400/10—Presence of inorganic materials
- C09J2400/16—Metal
- C09J2400/163—Metal in the substrate
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2433/00—Presence of (meth)acrylic polymer
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Abstract
The invention provides a heat dissipation buffer film, which is characterized in that graphene directly grows on the surface of an un-degreased metal foil, compared with the traditional compounding method of a graphite sheet and a copper foil, the heat dissipation buffer film reduces the existence of an adhesive layer and the thermal resistance of a material, and meanwhile, the thickness of the graphene is obviously reduced because the graphene is very thin; the acrylic acid adhesive is directly coated on the graphene film for foaming, so that an adhesive layer between a graphite sheet and foam cotton in the traditional mode is reduced, the thermal resistance of the material is reduced, and the heat dissipation performance of the material is improved, so that the thermal conductivity of graphite is kept and the thickness of the graphite layer is reduced to meet the requirements of thinning and high heat conduction of the material by effectively eliminating the interface thermal resistance.
Description
Technical Field
The invention belongs to the technical field of composite films, and particularly relates to a heat dissipation buffer film.
Background
With the approach of the 5G era and the continuous upgrading of functions, the trend of lightness, thinness and integration of internal parts of the smart phone is obvious, the internal space is strictly limited, the performance and the heat dissipation requirements of core parts are remarkably improved, and the heat dissipation scheme suitable for the smart phone is developed towards the direction of ultrathin and high efficiency. As a lighting technology of a 5G smart phone, the application of an OLED display screen is widely concerned. Different from the traditional LCD display mode, the OLED display screen does not need a backlight source, adopts a very thin organic material coating and a glass substrate, and when current flows through the OLED display screen, the organic materials can emit light. The method is a heat dissipation scheme of the current 5G mobile phone, wherein the heat of a 5G mobile phone chip and other parts with serious heat generation is partially dispersed to an OLED screen in a heat radiation, heat conduction and heat equalization mode. The traditional heat dissipation buffer film structure on the current OLED screen is shown in figure 1 and comprises a release layer 7, a grid adhesive layer 6, a foam layer 5, a second adhesive layer 4, a graphite sheet layer 3, a first adhesive layer 2 and a copper foil 1. The graphite sheet layer 3 is composed of an adhesive 31 and a graphite sheet 32, and the adhesive 31 coats the graphite sheet 32. There are the following problems: (1) the thickness reduction space is small, because two layers of adhesive structures exist in the structure and are used for bonding different materials, the adhesive needs to have enough viscosity, and the thickness of the adhesive is at least more than 2 mu m; the graphite flake 32 is relatively fragile and needs to be coated with the adhesive 31 to prevent the graphite flake from being broken, the minimum thickness of the traditional artificial graphite flake is about ten microns, the thickness of the material is difficult to further reduce by adjusting the thickness of the graphite flake, and the requirement of further ultra-thinning of the mobile phone cannot be met; (2) the existence of the first glue layer 2 and the second glue layer 4 causes the interface thermal resistance of the material to be large, and the heat transfer between the interfaces is blocked; (3) the heat conductivity coefficient of the artificial graphite flake can reach more than 500w/m.k, and the whole graphite flake is coated by the adhesive, so that the heat conductivity coefficient is seriously reduced, the effect of uniform heat conduction is hardly played, and the heat dissipation effect of the traditional heat dissipation buffer film is poor.
Disclosure of Invention
The invention aims to provide a heat dissipation buffer film, and solves the problems of large thickness and poor heat dissipation effect of the conventional OLED screen heat dissipation buffer film.
In order to solve the technical problems, the invention provides a heat dissipation buffer film which is sequentially divided into a release film layer, a grid glue layer, a foam buffer layer, a graphene layer and a metal foil layer from top to bottom, wherein the preparation method comprises the following steps:
(1) preparing a metal foil layer and a graphene layer by adopting a chemical vapor deposition method: adopting an unwashed rolled metal as a matrix for CVD deposition of graphene, taking grease on the surface of the unwashed rolled metal as a carbon source for growing the graphene, directly putting the unwashed rolled metal into a CVD system for growth, and forming a graphene film on the surface of the unwashed rolled metal to obtain a graphene layer;
(2) preparing a foam buffer layer: directly coating a layer of acrylic acid cross-linking agent on the surface of the graphene layer, drying the graphene layer in a drying oven, and foaming the dried material in the drying oven again to obtain a foam buffer layer;
(3) preparing a grid adhesive layer and a release film layer: and coating an acrylic acid adhesive on the reticulated release film, drying the reticulated release film by a six-section drying oven to obtain a grid adhesive layer, and attaching the grid adhesive layer to the foam buffer layer to form the heat dissipation buffer film.
As a preferable scheme of the heat dissipation buffer film, in the step (1), the unwashed rolled metal is any one or more alloys of aluminum, copper, nickel, silver, gold or titanium, and the thickness of the unwashed rolled metal is 1-20 μm.
As a preferable scheme of the heat dissipation buffer film, in the step (1), the number of graphene films is 1-10, and the thickness of a single-layer graphene film is 0.0334 nm.
As a preferable embodiment of the heat dissipation buffer film of the present invention, the growth conditions of the CVD in the step (1) are: and (3) introducing hydrogen with the flow rate of 200-700 sccmd and argon with the flow rate of 100-1500 sccm into the hearth under the pressure of less than 1Pa, raising the surface temperature of the growth substrate to 800-1000 ℃ within 15 minutes, preserving the temperature for 20-60 min, cooling to room temperature at the cooling speed of 10-20 ℃/min, and finishing the CVD growth.
As a preferable scheme of the heat dissipation buffer film, the coating speed in the step (2) is 3-5 m/min, the temperature of the oven is 90-110 ℃, the thickness of the dried acrylic acid cross-linking agent is 50-100 mu m, the foaming temperature is 120-170 ℃, and the foaming time is 3-6 min.
As a preferable embodiment of the heat dissipation buffer film of the present invention, the acrylic crosslinking agent includes 100 parts of an acrylate copolymer having a carboxyl group or a hydroxyl group; 30-70 parts of a solvent, tackifying resin and rubber; 1-5 parts of foaming agent and 0.8-1.5 parts of isocyanate curing agent.
As a preferable scheme of the heat dissipation buffer film, the acrylate copolymer is formed by polymerizing monomers of ethyl acrylate, butyl acrylate and iso-acrylate, and the molecular weight is 30-50 ten thousand; the solvent comprises any one or a combination of more of ethyl acetate, n-butyl acetate, toluene and butanone; the tackifying resin is modified rosin resin; the rubber is any one of nitrile rubber, acrylate rubber and styrene butadiene rubber; the foaming agent is any one of N-nitroso compound, azo compound and hydrazide compound; the isocyanate curing agent is any one or more of toluene diisocyanate, isophorone diisocyanate, hexamethylene diisocyanate and 4,4' -dicyclohexylmethane diisocyanate.
As a preferable scheme of the heat dissipation buffer film, the acrylic adhesive in the step (3) comprises 100 parts of low-viscosity acrylic polyester adhesive, 0.8-2 parts of isocyanate curing agent and 50-150 parts of organic solvent.
As a preferable scheme of the heat dissipation buffer film, the isocyanate curing agent includes toluene diisocyanate; the organic solvent includes ethyl acetate and toluene.
As a preferable scheme of the heat dissipation buffer film, the coating speed in the step (3) is 9m/min, the temperature of the six-section oven is 50 ℃/80 ℃/110 ℃/110 ℃/90 ℃/60 ℃, and the thickness of the dried grid glue layer is 15 mu m.
According to the heat dissipation buffer film, graphene directly grows on the surface of an un-degreased metal foil, compared with the traditional mode that a graphite sheet is compounded with a copper foil, the mode reduces the existence of an adhesive layer, reduces the thermal resistance of a material, and obviously reduces the thickness of the graphene because the graphene is very thin; the acrylic acid adhesive is directly coated on the graphene film for foaming, so that an adhesive layer between a graphite sheet and foam cotton in the traditional mode is reduced, the thermal resistance of the material is reduced, and the heat dissipation performance of the material is improved, so that the thermal conductivity of graphite is kept and the thickness of the graphite layer is reduced to meet the requirements of thinning and high heat conduction of the material by effectively eliminating the interface thermal resistance.
Drawings
FIG. 1 is a schematic cross-sectional view of a heat dissipation buffer film in the prior art;
FIG. 2 is a schematic cross-sectional view of a heat dissipation buffer film according to the present invention.
Wherein, 1 is the copper foil, 2 is first glue film, 3 is the graphite lamella, 31 is the gluing agent, 32 is the graphite flake, 4 is the second glue film, 5 is the cotton layer of bubble, 6 is the net glue film, 7 is from the type layer, 8 is the metal foil layer, 9 is graphite alkene layer, 10 is the cotton buffer layer of bubble, 11 is the net glue film, 12 is from the type film layer.
Detailed Description
The present invention will be described in further detail with reference to specific embodiments in order to make the above objects, features and advantages more apparent and understandable.
Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the invention. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments.
As shown in fig. 2, a heat dissipation buffer film structurally includes a release film layer 12, a mesh adhesive layer 11, a foam buffer layer 10, a graphene layer 9, and a metal foil layer 8. The method is realized by the following technical scheme:
1. preparation of metal foil layer 8 and graphene layer 9
The preparation method of the copper foil graphene layer by adopting the chemical vapor deposition method comprises the following specific steps:
1.1, adopting unwashed rolling metal as a matrix for CVD deposition of graphene, and taking grease on the surface of the matrix as a carbon source for growing the graphene, without using an additional carbon source, and reducing related configuration of a CVD system and cost; the rolling metal can be any one or more than two of alloys such as aluminum, copper, nickel, silver, gold, titanium and the like, copper is preferred, and the thickness is preferably 1-20 mu m;
1.2, directly putting the material into a CVD system for growth, and forming a large-area graphene film on the surface of the material, wherein the average layer number of the graphene film is a single layer, a double layer or a multilayer, the layer number is not more than 10, the thickness of single-layer graphene is only 0.0334nm, and the thickness of the layer is negligible.
1.3CVD growth conditions were as follows: and (3) introducing hydrogen with the flow rate of 200-700 sccmd and argon with the flow rate of 100-1500 sccm into the hearth under the pressure of less than 1Pa, raising the surface temperature of the growth substrate to 800-1000 ℃ within 15 minutes, preserving the temperature for 20-60 min, cooling to room temperature at the cooling speed of 10-20 ℃/min, and finishing the CVD growth.
2. Foam cushioning layer 10 preparation
Directly coating a layer of acrylic acid cross-linking agent on the surface of the graphene layer 9, and drying in an oven, wherein the temperature of the oven is preferably 90-110 ℃, the coating speed is preferably 3-5 m/min, and the thickness of the cross-linking agent after drying is preferably 50-100 μm. And (3) re-foaming the dried material in the oven, wherein the foaming temperature is preferably 120-170 ℃, and the foaming time is preferably 3-6 min.
The acrylic acid crosslinking agent comprises 100 parts of acrylic ester copolymer with carboxyl or hydroxyl, 30-70 parts of solvent, tackifying resin, rubber, 1-5 parts of foaming agent and 0.8-1.5 parts of isocyanate curing agent. The acrylic ester copolymer is mainly polymerized by monomers of ethyl acrylate, butyl acrylate and iso-acrylate, and has a molecular weight of about 30-50 ten thousand; the solvent comprises one or a combination of more of ethyl acetate, n-butyl acetate, toluene and butanone; the tackifying resin mainly refers to rosin resin, and the modified rosin resin has active carboxyl and double bonds, has strong reactivity, and can participate in esterification, decarboxylation and other reactions in acrylate adhesives; the rubber comprises nitrile rubber, acrylate rubber, styrene butadiene rubber and the like; the foaming agent comprises N-nitroso compounds, azo compounds and hydrazide compounds; the isocyanate curing agent is at least one of toluene diisocyanate, isophorone diisocyanate, hexamethylene diisocyanate and 4,4' -dicyclohexylmethane diisocyanate.
3. Preparation of grid glue layer 11
And (3) coating an acrylic acid adhesive on the reticulated release film, drying the reticulated release film by a drying oven, and attaching the reticulated release film to the foam buffer layer 10 to form a final scheme.
The acrylic acid adhesive comprises the following components: 100 parts of low-viscosity acrylic polyester adhesive, 0.8-2 parts of isocyanate curing agent and 50-150 parts of organic solvent.
For specific embodiments and comparative examples, reference is made to the following comparative examples and examples:
comparative example 1
Taking a currently common sample as an example, the thickness of a copper foil is 25 μm, the thickness of an adhesive between the copper foil and a graphite sheet is 5 μm, the thickness of the graphite sheet is 25 μm, the thickness of an adhesive layer between the graphite sheet and foam is 5 μm, the thickness of the foam is 100 μm, and the thickness of a reticulated adhesive is 15 μm.
Example 1
The structure of this embodiment is shown in fig. 2, and includes a 90 μm textured release film, 15 μm textured glue, 100 μm foam, 1 to 10 graphene films, and 9 μm copper foil.
The flow of this embodiment is as follows:
the single-side non-degreased 9-micron rolled copper is used as a growth substrate and is placed into a roll-to-roll PECVD furnace for growth. And (3) introducing argon with the flow of 200sccm into the furnace under the pressure of less than 1Pa, raising the surface temperature of the copper foil to 800 ℃ within 5 minutes, and continuously growing to form a copper foil/graphene structure.
And (3) coating a 220-micron acrylic acid adhesive on the surface of the graphene, drying in a baking oven, wherein the temperature of the six-section baking oven is 50 ℃/80 ℃/110 ℃/110 ℃/90 ℃/60 ℃, and the coating speed is 6 m/min. And (4) drying, and then, passing through the oven again for acrylic acid foaming, wherein the foaming temperature is 130 ℃, the passing speed of the oven is 5m/min, and the thickness of the foamed foam is 100 mu m.
And then coating 60 mu m of acrylic acid adhesive on the reticulated release film, drying in a baking oven, wherein the temperature of the six-section baking oven is 50 ℃/80 ℃/110 ℃/110 ℃/90 ℃/60 ℃, and the coating speed is 9 m/min. The thickness of the dried adhesive is 15 mu m, and the adhesive is attached to the foamed acrylic foam surface to form a final structure.
The foam formula comprises the following components in percentage by mass: 100 parts of acrylate copolymer, 50 parts of solvent, 1 part of toluene diisocyanate, 40 parts of nitrile rubber and 1 part of diazoaminobenzene.
The formula of the mesh glue comprises the following components in percentage by mass: 100 parts of acrylate adhesive, 50 parts of toluene, 50 parts of ethyl acetate and 0.8 part of toluene diisocyanate.
Example 2
The structure of this embodiment is shown in fig. 2, and includes a 90 μm textured release film, 15 μm textured glue, 100 μm foam, 1 to 10 graphene films, and 18 μm copper foil.
The flow of this embodiment is as follows:
the single-side non-degreased 18-micron rolled copper is used as a growth substrate and is placed into a roll-to-roll PECVD furnace for growth. And (3) introducing argon with the flow of 150sccm into the furnace under the pressure of less than 1Pa, raising the surface temperature of the copper foil to 900 ℃ within 5 minutes, and continuously growing to form a copper foil/graphene structure.
Coating 200 mu m of acrylic acid adhesive on the surface of graphene, and drying in a baking oven, wherein the temperature of the six-section baking oven is 50 ℃/80 ℃/110 ℃/110 ℃/90 ℃/60 ℃, and the coating speed is 5 m/min. And (3) drying, and then, passing through the oven again for acrylic acid foaming, wherein the foaming temperature is 130 ℃, the passing speed of the oven is 4m/min, and the thickness of the foamed foam is 100 mu m.
And then coating 60 mu m of acrylic acid adhesive on the reticulated release film, drying in a baking oven, wherein the temperature of the six-section baking oven is 50 ℃/80 ℃/110 ℃/110 ℃/90 ℃/60 ℃, and the coating speed is 9 m/min. The thickness of the dried adhesive is 15 mu m, and the adhesive is attached to the foamed acrylic foam surface to form a final structure.
The foam formula comprises the following components in percentage by mass: 100 parts of acrylate copolymer, 40 parts of solvent, 1 part of toluene diisocyanate, 40 parts of nitrile rubber and 1.5 parts of diazoaminobenzene.
The formula of the mesh glue comprises the following components in percentage by mass: 100 parts of acrylate adhesive, 50 parts of toluene, 50 parts of ethyl acetate and 0.8 part of toluene diisocyanate.
Example 3
The structure of this embodiment is shown in fig. 2, and includes a 90 μm textured release film, 15 μm textured glue, 100 μm foam, 1 to 10 graphene films, and 25 μm copper foil.
The flow of this embodiment is as follows:
the 25-micron rolled copper without degreasing on one side is used as a growth substrate and is placed into a roll-to-roll PECVD furnace for growth. And (3) introducing argon with the flow of 150sccm into the furnace under the pressure of less than 1Pa, raising the surface temperature of the copper foil to 1000 ℃ within 10 minutes, and continuously growing to form a copper foil/graphene structure.
Coating 180 mu m of acrylic acid adhesive on the surface of graphene, and drying in a baking oven, wherein the temperature of the six-section baking oven is 50 ℃/80 ℃/110 ℃/110 ℃/90 ℃/60 ℃, and the coating speed is 5 m/min. And after drying, the acrylic acid foam is carried out in the oven again, wherein the foaming temperature is 140 ℃, the oven passing speed is 3m/min, and the thickness of the foam is 100 mu m.
And then coating 60 mu m of acrylic acid adhesive on the reticulated release film, drying in a baking oven, wherein the temperature of the six-section baking oven is 50 ℃/80 ℃/110 ℃/110 ℃/90 ℃/60 ℃, and the coating speed is 9 m/min. The thickness of the dried adhesive is 15 mu m, and the adhesive is attached to the foamed acrylic foam surface to form a final structure.
The foam formula comprises the following components in percentage by mass: 100 parts of acrylate copolymer, 30 parts of solvent, 1 part of toluene diisocyanate, 40 parts of nitrile rubber and 2 parts of diazoaminobenzene.
The formula of the mesh glue comprises the following components in percentage by mass: 100 parts of acrylate adhesive, 50 parts of toluene, 50 parts of ethyl acetate and 0.8 part of toluene diisocyanate.
Comparative examples, examples the test results are shown in table 1 below:
TABLE 1
From the data in table 1, it can be seen that the thicknesses of the copper foils in the embodiment 3 and the comparative example are consistent, and from comparison of the test results, under the same copper foil thickness condition, the thickness of the heat dissipation buffer film disclosed by the invention is reduced by about 30 μm, and through a simulated heat dissipation test, the temperature of a chip is reduced by 8 ℃, but the screen temperature is only increased by 2 ℃, and the heat dissipation and equalization effect is obviously improved.
It should be noted that the above-mentioned embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, which should be covered by the claims of the present invention.
Claims (10)
1. A heat dissipation buffer film is characterized in that: from top to bottom divide into in proper order from type rete, net glue film, bubble cotton buffer layer, graphite alkene layer and metal foil layer, its preparation method includes:
(1) preparing a graphene layer by adopting a chemical vapor deposition method: adopting an unwashed rolled metal as a matrix for CVD deposition of graphene, taking grease on the surface of the unwashed rolled metal as a carbon source for growing the graphene, directly putting the unwashed rolled metal into a CVD system for growth, and forming a graphene film on the surface of the unwashed rolled metal to obtain a graphene layer;
(2) preparing a foam buffer layer: directly coating a layer of acrylic acid cross-linking agent on the surface of the graphene layer, drying the graphene layer in a drying oven, and foaming the dried material in the drying oven again to obtain a foam buffer layer;
(3) preparing a grid adhesive layer and a release film layer: and coating an acrylic acid adhesive on the reticulated release film, drying the reticulated release film by a six-section drying oven to obtain a grid adhesive layer, and attaching the grid adhesive layer to the foam buffer layer to form the heat dissipation buffer film.
2. The heat-dissipating buffer film of claim 1, wherein: the unwashed rolled metal in the step (1) is any one or more of aluminum, copper, nickel, silver, gold and titanium, and the thickness of the unwashed rolled metal is 1-20 mu m.
3. The heat-dissipating buffer film of claim 1, wherein: the number of layers of the graphene film in the step (1) is 1-10, and the thickness of the single-layer graphene film is 0.0334 nm.
4. The heat-dissipating buffer film of claim 1, wherein: the growth conditions of the CVD in the step (1) are as follows: and (3) introducing hydrogen with the flow rate of 200-700 sccmd and argon with the flow rate of 100-1500 sccm into the hearth under the pressure of less than 1Pa, raising the surface temperature of the growth substrate to 800-1000 ℃ within 15 minutes, preserving the temperature for 20-60 min, cooling to room temperature at the cooling speed of 10-20 ℃/min, and finishing the CVD growth.
5. The heat-dissipating buffer film of claim 1, wherein: the coating speed in the step (2) is 3-5 m/min, the temperature of the drying oven is 90-110 ℃, the thickness of the dried acrylic acid cross-linking agent is 50-100 mu m, the foaming temperature is 120-170 ℃, and the foaming time is 3-6 min.
6. The heat-dissipating buffer film of claim 5, wherein: the acrylic crosslinking agent comprises 100 parts of acrylic copolymer with carboxyl or hydroxyl; 30-70 parts of a solvent, tackifying resin and rubber; 1-5 parts of foaming agent and 0.8-1.5 parts of isocyanate curing agent.
7. The heat-dissipating buffer film of claim 6, wherein: the acrylic ester copolymer is polymerized by monomer ethyl acrylate, butyl acrylate and iso-acrylate, and the molecular weight is 30-50 ten thousand; the solvent comprises any one or a combination of more of ethyl acetate, n-butyl acetate, toluene and butanone; the tackifying resin is modified rosin resin; the rubber is any one of nitrile rubber, acrylate rubber and styrene butadiene rubber; the foaming agent is any one of N-nitroso compound, azo compound and hydrazide compound; the isocyanate curing agent is any one or more of toluene diisocyanate, isophorone diisocyanate, hexamethylene diisocyanate and 4,4' -dicyclohexylmethane diisocyanate.
8. The heat-dissipating buffer film of claim 1, wherein: the acrylic adhesive in the step (3) comprises 100 parts of low-viscosity acrylic polyester adhesive, 0.8-2 parts of isocyanate curing agent and 50-150 parts of organic solvent.
9. The heat-dissipating buffer film of claim 8, wherein: the isocyanate curing agent comprises toluene diisocyanate; the organic solvent includes ethyl acetate and toluene.
10. The heat-dissipating buffer film of claim 1, wherein: and (4) in the step (3), the coating speed is 9m/min, the temperature of the six sections of drying ovens is 50 ℃/80 ℃/110 ℃/110 ℃/90 ℃/60 ℃, and the thickness of the dried grid glue layer is 15 mu m.
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| CN112357915A (en) * | 2020-12-02 | 2021-02-12 | 武汉言诺嘉科技有限公司 | Graphene film with high heat conductivity and good buffering property for liquid crystal screen and preparation method thereof |
| CN113078275A (en) * | 2021-03-24 | 2021-07-06 | 京东方科技集团股份有限公司 | Protection structure, OLED folding display module and display device |
| CN113516924A (en) * | 2021-05-19 | 2021-10-19 | 京东方科技集团股份有限公司 | Display module and electronic equipment |
| CN113861860A (en) * | 2021-10-20 | 2021-12-31 | 湖南弘擎电子材料科技有限公司 | Waterproof point-impact-resistant absorption acrylic acid foam adhesive tape and preparation method thereof |
| CN113999623A (en) * | 2021-11-18 | 2022-02-01 | 太仓展新胶粘材料股份有限公司 | Integrated composite heat dissipation buffer part and preparation method thereof |
| CN114851647A (en) * | 2022-05-25 | 2022-08-05 | 上海拜赋新材料技术有限公司 | Semiconductor chip package dummy wafer substrate and manufacturing method thereof |
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| CN113516924A (en) * | 2021-05-19 | 2021-10-19 | 京东方科技集团股份有限公司 | Display module and electronic equipment |
| CN113861860A (en) * | 2021-10-20 | 2021-12-31 | 湖南弘擎电子材料科技有限公司 | Waterproof point-impact-resistant absorption acrylic acid foam adhesive tape and preparation method thereof |
| CN113999623A (en) * | 2021-11-18 | 2022-02-01 | 太仓展新胶粘材料股份有限公司 | Integrated composite heat dissipation buffer part and preparation method thereof |
| CN113999623B (en) * | 2021-11-18 | 2023-08-08 | 太仓展新胶粘材料股份有限公司 | Integrated composite heat dissipation buffer piece and preparation method thereof |
| CN114851647A (en) * | 2022-05-25 | 2022-08-05 | 上海拜赋新材料技术有限公司 | Semiconductor chip package dummy wafer substrate and manufacturing method thereof |
| CN114851647B (en) * | 2022-05-25 | 2024-03-15 | 上海拜赋新材料技术有限公司 | Semiconductor chip package dummy substrate and manufacturing method thereof |
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