CN111224535A - Capacitor series bus bar for testing dynamic characteristics of crimping type power module - Google Patents
Capacitor series bus bar for testing dynamic characteristics of crimping type power module Download PDFInfo
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- CN111224535A CN111224535A CN202010164044.3A CN202010164044A CN111224535A CN 111224535 A CN111224535 A CN 111224535A CN 202010164044 A CN202010164044 A CN 202010164044A CN 111224535 A CN111224535 A CN 111224535A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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Abstract
The invention relates to a capacitor series bus for testing the dynamic characteristics of a crimping type power module, which comprises: the high-voltage capacitor bank, the low-voltage capacitor bank, the laminated busbar, the crimping type module and the crimping type module connecting plate are arranged on the high-voltage capacitor bank; the high-voltage capacitor bank comprises a plurality of high-voltage capacitors which are annularly arranged; the low-voltage capacitor bank comprises a plurality of low-voltage capacitors which are annularly arranged; the high-voltage capacitor bank and the low-voltage capacitor bank are connected in series through a laminated busbar and are in mirror symmetry with the laminated busbar; the crimping type module comprises a first crimping type module and a second crimping type module which are connected with the laminated busbar. The capacitor serial bus avoids path overlapping, so that the length of a power loop can be reduced, the aim of reducing parasitic inductance of a direct-current bus is fulfilled, the stray inductance in the capacitor is offset, and the parasitic inductance optimization of the laminated bus and the whole capacitor is realized.
Description
Technical Field
The invention relates to the technical field of power electronics, in particular to a capacitor series bus for testing the dynamic characteristics of a crimping type power module.
Background
Since the 21 st century, the problems of energy shortage, environmental pollution and the like are increasingly prominent, so that technologies such as clean energy power generation, high-voltage long-distance power transmission, cross-regional networking and the like are continuously emerging, and meanwhile, the application of the new technologies puts higher requirements on the safe, efficient, rapid and flexible control of a power system. The widespread use of power semiconductor devices has led to the development of powerful life and vitality for power systems.
The dynamic characteristics of the power device determine the switching loss, the electrical stress and the electromagnetic compatibility of the device, and directly influence the performance of the commutation equipment, so that the acquisition of accurate switching characteristics of the power device has important significance. However, the parameters in the manual provided by the semiconductor manufacturer are often switching characteristics under specific operating environments, and are not reproducible. And with the improvement of the switching speed of the power device, the influence of the parasitic parameters of the circuit board and the device on the switching characteristics is more and more obvious. The reference parameters in the data sheet cannot be used directly for the design and analysis of the equipment circuit. In order to know the real performance of the power switching device in the actual working condition and provide basic data support for the design and manufacture of the commutation equipment, the switching characteristics of the device at the actual working point need to be accurately measured.
With the continuous promotion of the voltage grade and the capacity grade of the power system, power devices with higher voltage and higher power grade are continuously emerged, and higher requirements are provided for a direct current support capacitor and a laminated busbar which plays a role in connection in a dynamic characteristic test circuit of the power device. A single capacitor in a test circuit often cannot meet the requirement of test voltage, which needs to be realized by the series combination of some capacitors, and the difficulty of stray inductance control of the busbar is obviously promoted by the series use of the capacitors. In addition, the shorter and shorter switching time of the power electronic device increases the current change rate of the device, and in the switching transient state of the device, the voltage generated on the stray inductance of the power loop is superposed at the two ends of the device. This can create problems with device overvoltage, EMI interference, increased switching losses, etc., which in the severe cases can lead to failure or direct damage to the power electronics. In order to protect power electronic devices, exert the performance of the power electronic devices and accurately test the dynamic characteristics of the power electronic devices, the stray inductance of a multilayer direct-current busbar in the form of a series capacitor needs to be optimally designed.
The two aspects of capacitor layout and busbar structure design need be considered simultaneously in the female design of arranging of direct current electric capacity, and the female capacitor layout design of arranging of traditional direct current electric capacity adopts the individual layer sequence overall arrangement more, can't realize offsetting of the inside stray inductance of electric capacity to individual layer sequence arrangement capacitor layout power return circuit length is unequal, and partial current path has overlapped, has influenced female parasitic inductance control of arranging to a great extent. The female structural design that arranges of traditional direct current capacitance mother adopts the individual layer tiling structure more, and the female pole plate coupling degree of arranging that adopts this kind of design is little, and is mutual-inductive little between the copper, can not utilize mutual-inductance to offset female holistic parasitic inductance of arranging to it is great to lead to arranging holistic parasitic inductance of arranging.
Disclosure of Invention
The invention aims to provide a capacitor serial bus for testing the dynamic characteristics of a crimping type power module, which effectively reduces the parasitic inductance value of a direct current capacitor bus.
In order to achieve the purpose, the invention provides the following scheme:
a capacitor series bus for a crimp-type power module dynamic characteristic test, the capacitor series bus comprising:
the high-voltage capacitor bank, the low-voltage capacitor bank, the laminated busbar, the crimping type module and the crimping type module connecting plate are arranged on the high-voltage capacitor bank; the high-voltage capacitor bank comprises a plurality of high-voltage capacitors which are connected in parallel and are annularly arranged; the low-voltage capacitor bank comprises a plurality of low-voltage capacitors which are connected in parallel and are annularly arranged;
the high-voltage capacitor bank and the low-voltage capacitor bank are connected in series through a laminated busbar and are mirror-symmetrical with respect to the laminated busbar;
the crimping module comprises a first crimping module and a second crimping module which are connected with the laminated busbar;
the crimping type module connecting plate is used for connecting the first crimping type module and the second crimping type module.
Optionally, the laminated busbar specifically includes: the positive plate, the first insulating polar plate, the negative plate, the second insulating polar plate and the auxiliary polar plate;
the positive plate, the first insulating polar plate, the negative plate, the second insulating polar plate and the auxiliary polar plate are sequentially arranged below the high-voltage capacitor bank from top to bottom;
the positive plate is connected with one end of the high-voltage capacitor bank, the other end of the high-voltage capacitor bank is connected with the auxiliary polar plate, the negative plate is connected with one end of the low-voltage capacitor bank, and the other end of the low-voltage capacitor bank is connected with the auxiliary polar plate.
Optionally, the first crimping module is specifically a first IGBT crimping module, the second crimping module is specifically a second IGBT crimping module, a collector of the first IGBT crimping module is connected to the positive electrode plate, and an emitter of the second IGBT crimping module is connected to the negative electrode plate.
Optionally, the positive plate has a plurality of first round holes, and the plurality of first round holes are through holes; the plurality of first round holes comprise a plurality of first mounting holes and a plurality of positive plate connecting holes;
and the positive electrode of the high-voltage capacitor bank is connected with the positive plate connecting hole.
Optionally, the negative plate has a plurality of second round holes, and the plurality of second round holes are through holes; the plurality of second round holes comprise a plurality of second mounting holes and a plurality of negative plate connecting holes;
and the negative electrode of the low-voltage capacitor bank is connected with the negative plate connecting hole.
Optionally, the auxiliary pole plate has a plurality of third circular holes, each of the third circular holes includes a plurality of third mounting holes, a plurality of first auxiliary pole plate connecting holes and a plurality of second auxiliary pole plate connecting holes, the plurality of first auxiliary pole plate connecting holes and the plurality of second auxiliary pole plate connecting holes are non-central through holes, the first auxiliary pole plate connecting hole is located on the upper surface of the auxiliary pole plate, the second auxiliary pole plate connecting hole is located on the lower surface of the auxiliary pole plate, and the first auxiliary pole plate connecting hole and the second auxiliary pole plate connecting hole are concentric;
the negative pole of the high-voltage capacitor bank is connected with the first auxiliary pole plate connecting hole, and the positive pole of the low-voltage capacitor bank is connected with the second auxiliary pole plate connecting hole.
Optionally, the laminated busbar is quarter-circular.
Optionally, the first IGBT crimping module includes: a first IGBT and a first diode;
the second IGBT crimp-type module includes: a second IGBT and a second diode;
the collector electrode of the first IGBT is connected with the cathode of the first diode, and the emitter electrode of the first IGBT is connected with the collector electrode of the second IGBT and the anode of the first diode; a collector of the second IGBT is connected with a cathode of the second diode, and an emitter of the second IGBT is connected with an anode of the second diode;
optionally, the high-voltage capacitor bank includes 4 high-voltage capacitors, and the low-voltage capacitor bank includes 4 low-voltage capacitors.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the invention provides a capacitor series bus for testing the dynamic characteristics of a crimping type power module. The capacitors of the capacitor series bus are annularly arranged and arranged in a double-layer mode, and the bus adopts a laminated structure. The power circuit paths of the capacitor layout in the annular arrangement are equal in length, the length of the power circuit is reduced, and therefore parasitic inductance of the direct-current busbar is reduced. The laminated busbar structure has the advantages that the coupling degree between the polar plates is large, the mutual inductance counteracts the overall parasitic inductance of the busbar, and the overall parasitic inductance of the busbar is small.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
Fig. 1(a) and fig. 1(b) are schematic structural diagrams of a capacitor series bus for a dynamic characteristic test of a crimping type power module according to an embodiment of the present invention;
fig. 2(a) and fig. 2(b) are schematic structural diagrams of a capacitor serial bus laminated bus bar according to an embodiment of the present invention;
fig. 2(c) is a top view of a laminated busbar of a capacitor serial busbar according to an embodiment of the invention;
FIG. 3(a) is a power circuit with a conventional single-layer capacitor layout;
FIG. 3(b) is a power circuit with a double layer capacitor ring layout for the same direction current path;
FIG. 3(c) is a power circuit of a double-layer capacitor ring layout of a reverse current path according to an embodiment of the present invention;
fig. 4(a) is a schematic view of a positive plate of a capacitor serial bus according to an embodiment of the invention;
fig. 4(b) is a top view of the positive plate of the capacitor serial bus according to the embodiment of the invention;
fig. 5(a) is a schematic view of a negative plate of a capacitor serial bus bar according to an embodiment of the invention;
fig. 5(b) is a top view of the negative plate of the capacitor serial bus bar according to the embodiment of the invention;
fig. 6(a) is a schematic diagram of an auxiliary plate of a capacitor serial bus according to an embodiment of the present invention;
fig. 6(b) is a top view of an auxiliary plate of a capacitor serial busbar according to an embodiment of the invention;
fig. 6(c) is a bottom view of an auxiliary plate of the capacitor serial bus according to the embodiment of the present invention;
fig. 7 is a schematic diagram of a crimping type IGBT half-bridge module of a capacitor series bus according to an embodiment of the present invention.
Description of the symbols:
the high-voltage capacitor bank 1, the low-voltage capacitor bank 2, the laminated busbar 3, the crimping type module 4, the crimping type module connecting plate 5, the positive plate 301, the first insulating plate 302, the negative plate 303, the second insulating plate 304, the auxiliary plate 305, the first crimping type module 401, and the second crimping type module 402.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a capacitor series bus for testing the dynamic characteristics of a crimping type power module, which effectively reduces the parasitic inductance value of a direct current bus.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 1(a) and 1(b) are schematic structural diagrams of a capacitor series bus for a dynamic characteristic test of a crimping type power module according to an embodiment of the present invention, and as shown in fig. 1(a) and 1(b), the capacitor series bus includes:
the high-voltage capacitor bank comprises a high-voltage capacitor bank 1, a low-voltage capacitor bank 2, a laminated busbar 3, a crimping type module 4 and a crimping type module connecting plate 5;
the high-voltage capacitor bank 1 comprises a plurality of high-voltage capacitors which are connected in parallel and are annularly arranged; the low-voltage capacitor bank 2 includes a plurality of low-voltage capacitors, and is a plurality of low-voltage capacitors connected in parallel and arranged in an annular shape. The power circuit paths of the capacitor layout in the annular arrangement are equal in length, and path overlapping is avoided, so that the length of the power circuit can be reduced, and the purpose of reducing parasitic inductance of the direct-current busbar is achieved.
The high-voltage capacitor bank 1 and the low-voltage capacitor bank 2 are connected in series through a laminated busbar 3 and are mirror-symmetrical about the laminated busbar 3. The mirror symmetry's high-voltage capacitor group 1 and low-voltage capacitor group 2 have realized offsetting of the inside stray inductance of electric capacity, therefore electric capacity and female holistic stray inductance of arranging are littleer. And the high-voltage capacitor and the low-voltage capacitor which are symmetrical in upper and lower mirror surfaces are in one group, and the current flow directions in the two adjacent groups of capacitors are opposite, so that the parasitic inductance in the capacitors is offset, and the optimization of the parasitic inductance of the laminated busbar and the whole capacitor is realized.
The crimping module 4 comprises a first crimping module 401 and a second crimping module 402 which are connected with the laminated busbar 3; the first crimp-type module 401 and the second crimp-type module 402 form a half-bridge structure.
The crimp-type module connecting plate 5 is used to connect the first crimp-type module 401 and the second crimp-type module 402.
As shown in fig. 2(a) -2 (c), the laminated busbar has a quarter-circle shape.
The laminated busbar 3 specifically includes: a positive electrode plate 301, a first insulating electrode plate 302, a negative electrode plate 303, a second insulating electrode plate 304, and an auxiliary electrode plate 305;
the positive electrode plate 301, the first insulating electrode plate 302, the negative electrode plate 303, the second insulating electrode plate 304, and the auxiliary electrode plate 305 are arranged in this order from top to bottom below the high-voltage capacitor group 1, i.e., above the low-voltage capacitor group 2.
The positive plate 301 is connected with one end of the high-voltage capacitor bank, the other end of the high-voltage capacitor bank 1 is connected with the auxiliary plate 305, the negative plate 303 is connected with one end of the low-voltage capacitor bank 2, and the other end of the low-voltage capacitor bank 2 is connected with the auxiliary plate 305.
Fig. 3(a) is a power circuit with a conventional single-layer capacitor sequential layout, fig. 3(b) is a power circuit with a double-layer capacitor ring layout of a same-direction current path, and fig. 3(c) is a power circuit with a double-layer capacitor ring layout of a reverse current path according to an embodiment of the present invention. As shown in fig. 3(a) -3 (c), the current paths of the single-layer capacitor sequential layout structure are overlapped, and the current paths of the double-layer capacitor ring layout structure are not overlapped, so that the parasitic inductance is greatly reduced. Compared with the double-layer capacitor annular layout of the same-direction current path, in the double-layer capacitor annular layout of the reverse current path, the high-voltage capacitor and the low-voltage capacitor which are symmetrical in an upper mirror surface and a lower mirror surface are in one group, and the current flow directions in the two adjacent groups of capacitors are opposite, so that mutual inductance is increased, and the optimization of the parasitic inductance of the laminated busbar and the whole capacitor is realized.
Fig. 4(a) is a schematic view of a positive plate of a capacitor serial bus according to an embodiment of the invention; fig. 4(b) is a top view of a positive plate of a capacitor serial bus according to an embodiment of the present invention, as shown in fig. 4(a) and fig. 4(b), the positive plate has a plurality of first circular holes, specifically, 1-1 to 1-8, and the plurality of first circular holes are through holes; the plurality of first round holes comprise a plurality of first mounting holes and a plurality of positive plate connecting holes; the first mounting hole is numbered from 1-1 to 1-4, and the positive plate connecting hole is numbered from 1-5 to 1-8.
And the positive electrode of the high-voltage capacitor bank is connected with the positive plate connecting hole.
Fig. 5(a) is a schematic view of a negative plate of a capacitor serial bus bar according to an embodiment of the invention; fig. 5(b) is a top view of a negative plate of a capacitor serial bus bar according to an embodiment of the present invention, and as shown in fig. 5(a) and 5(b), the negative plate has a plurality of second circular holes, specifically, 2-1 to 2-8, and the plurality of second circular holes are through holes; the plurality of second round holes comprise a plurality of second mounting holes and a plurality of negative plate connecting holes; the second mounting hole is numbered from 2-1 to 2-4, and the negative plate connecting hole is numbered from 2-5 to 2-8.
And the negative electrode of the low-voltage capacitor bank is connected with the negative plate connecting hole.
Fig. 6(a) is a schematic diagram of an auxiliary plate of a capacitor serial bus according to an embodiment of the present invention; fig. 6(b) is a top view of an auxiliary plate of a capacitor serial busbar according to an embodiment of the invention; fig. 6(c) is a bottom view of an auxiliary plate of the capacitor serial bus according to the embodiment of the present invention, as shown in fig. 6(a) -6 (c), the auxiliary plate has a plurality of third circular holes, which are specifically numbered from 3-1 to 3-12. The third round hole comprises a plurality of third mounting holes, a plurality of first auxiliary pole plate connecting holes and a plurality of second auxiliary pole plate connecting holes; the third mounting hole is 3-1 to 3-4 in number, the first auxiliary pole plate connecting hole is 3-5 to 3-8 in number, and the second auxiliary pole plate connecting hole is 3-9 to 3-12 in number. The first auxiliary pole plate connecting holes and the second auxiliary pole plate connecting holes are non-central through holes, the first auxiliary pole plate connecting holes are located on the upper surface of the auxiliary pole plate, the second auxiliary pole plate connecting holes are located on the lower surface of the auxiliary pole plate, and the first auxiliary pole plate connecting holes and the second auxiliary pole plate connecting holes are concentric;
the negative pole of the high-voltage capacitor bank is connected with the first auxiliary pole plate connecting hole, and the positive pole of the low-voltage capacitor bank is connected with the second auxiliary pole plate connecting hole.
Specifically, the first crimping module is specifically a first IGBT crimping module, the second crimping module is specifically a second IGBT crimping module, a collector of the first IGBT crimping module is connected to the positive electrode plate, and an emitter of the second IGBT crimping module is connected to the negative electrode plate.
Fig. 7 is a schematic diagram of a crimping type IGBT half-bridge module of a capacitor series bus according to an embodiment of the present invention. As shown in fig. 7, the first IGBT crimp-type module includes: a first IGBT and a first diode;
the second IGBT crimp-type module includes: a second IGBT and a second diode;
the collector electrode of the first IGBT is connected with the cathode of the first diode, and the emitter electrode of the first IGBT is connected with the collector electrode of the second IGBT and the anode of the first diode; the collector of the second IGBT is connected with the cathode of the second diode, and the emitter of the second IGBT is connected with the anode of the second diode.
As an embodiment of the present invention, 4 high voltage capacitors and 4 low voltage capacitors are taken as an example:
1-1 to 1-4 are connected with the anode of the high-voltage capacitor bank 1, and 1-5 to 1-8 only play a role in fixing the high-voltage capacitor bank 1 and are not electrically connected with the cathode of the high-voltage capacitor bank 1; 2-1 to 2-4 are connected with the negative pole of the low-voltage capacitor bank 2, and 2-5 to 2-8 only play a role in fixing the positive pole of the low-voltage capacitor bank 2 and are not electrically connected with the positive pole of the low-voltage capacitor bank 2; 3-5 to 3-8 are connected with the negative pole of the high-voltage capacitor bank 1, 3-9 to 3-12 are connected with the positive pole of the low-voltage capacitor bank 2, and 3-1 to 3-4 only play a role in fixing the negative pole of the low-voltage capacitor bank 2 and are not electrically connected with the negative pole of the low-voltage capacitor bank 2.
The capacitors of the capacitor series bus are annularly arranged and arranged in a double-layer mode, and the bus adopts a laminated structure. The power circuit paths of the capacitor layout in the annular arrangement are equal in length, the length of the power circuit is reduced, and therefore parasitic inductance of the direct-current busbar is reduced. The laminated busbar structure has the advantages that the coupling degree between the polar plates is large, the mutual inductance counteracts the overall parasitic inductance of the busbar, and the overall parasitic inductance of the busbar is small.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (9)
1. A capacitor serial bus for a compression joint type power module dynamic characteristic test is characterized in that the capacitor serial bus comprises:
the high-voltage capacitor bank, the low-voltage capacitor bank, the laminated busbar, the crimping type module and the crimping type module connecting plate are arranged on the high-voltage capacitor bank; the high-voltage capacitor bank comprises a plurality of high-voltage capacitors which are connected in parallel and are annularly arranged; the low-voltage capacitor bank comprises a plurality of low-voltage capacitors which are connected in parallel and are annularly arranged;
the high-voltage capacitor bank and the low-voltage capacitor bank are connected in series through a laminated busbar and are mirror-symmetrical with respect to the laminated busbar;
the crimping module comprises a first crimping module and a second crimping module which are connected with the laminated busbar;
the crimping type module connecting plate is used for connecting the first crimping type module and the second crimping type module.
2. The capacitor series busbar for the dynamic characteristic test of the crimping type power module as claimed in claim 1, wherein the laminated busbar specifically comprises: the positive plate, the first insulating polar plate, the negative plate, the second insulating polar plate and the auxiliary polar plate;
the positive plate, the first insulating polar plate, the negative plate, the second insulating polar plate and the auxiliary polar plate are sequentially arranged below the high-voltage capacitor bank from top to bottom;
the positive plate is connected with one end of the high-voltage capacitor bank, the other end of the high-voltage capacitor bank is connected with the auxiliary polar plate, the negative plate is connected with one end of the low-voltage capacitor bank, and the other end of the low-voltage capacitor bank is connected with the auxiliary polar plate.
3. The capacitor series busbar for crimped power module dynamic characteristic test according to claim 2, wherein the first crimped module is specifically a first IGBT crimped module, the second crimped module is specifically a second IGBT crimped module, a collector of the first IGBT crimped module is connected with the positive plate, and an emitter of the second IGBT crimped module is connected with the negative plate.
4. The capacitor series busbar for the dynamic characteristic test of the crimping type power module as claimed in claim 2, wherein the positive plate has a plurality of first circular holes, and the plurality of first circular holes are through holes; the plurality of first round holes comprise a plurality of first mounting holes and a plurality of positive plate connecting holes;
and the positive electrode of the high-voltage capacitor bank is connected with the positive plate connecting hole.
5. The capacitor series busbar for the dynamic characteristic test of the crimping type power module as claimed in claim 2, wherein the negative plate has a plurality of second circular holes, and the plurality of second circular holes are through holes; the plurality of second round holes comprise a plurality of second mounting holes and a plurality of negative plate connecting holes;
and the negative electrode of the low-voltage capacitor bank is connected with the negative plate connecting hole.
6. The capacitor series bus for the dynamic characteristic test of the crimping type power module as claimed in claim 2, wherein the auxiliary pole plate has a plurality of third circular holes, the third circular holes include a plurality of third mounting holes, a plurality of first auxiliary pole plate connecting holes and a plurality of second auxiliary pole plate connecting holes, the plurality of first auxiliary pole plate connecting holes and the plurality of second auxiliary pole plate connecting holes are non-center through holes, the first auxiliary pole plate connecting holes are located on the upper surface of the auxiliary pole plate, the second auxiliary pole plate connecting holes are located on the lower surface of the auxiliary pole plate, and the first auxiliary pole plate connecting holes are concentric with the second auxiliary pole plate connecting holes;
the negative pole of the high-voltage capacitor bank is connected with the first auxiliary pole plate connecting hole, and the positive pole of the low-voltage capacitor bank is connected with the second auxiliary pole plate connecting hole.
7. The capacitor series busbar for crimped power module dynamic characteristic test according to claim 1, wherein the laminated busbar is quarter-circular.
8. The capacitor series busbar for the crimp-type power module dynamic characteristic test according to claim 2, wherein the first IGBT crimp-type module comprises: a first IGBT and a first diode;
the second IGBT crimp-type module includes: a second IGBT and a second diode;
the collector electrode of the first IGBT is connected with the cathode of the first diode, and the emitter electrode of the first IGBT is connected with the collector electrode of the second IGBT and the anode of the first diode; the collector of the second IGBT is connected with the cathode of the second diode, and the emitter of the second IGBT is connected with the anode of the second diode.
9. The capacitor series busbar for crimp type power module dynamic characteristic test according to claim 1, wherein the high voltage capacitor bank includes 4 high voltage capacitors, and the low voltage capacitor bank includes 4 low voltage capacitors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010164044.3A CN111224535A (en) | 2020-03-11 | 2020-03-11 | Capacitor series bus bar for testing dynamic characteristics of crimping type power module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010164044.3A CN111224535A (en) | 2020-03-11 | 2020-03-11 | Capacitor series bus bar for testing dynamic characteristics of crimping type power module |
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| CN111224535A true CN111224535A (en) | 2020-06-02 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112367760A (en) * | 2020-10-29 | 2021-02-12 | 科华恒盛股份有限公司 | Overcurrent structure, capacitor module and converter |
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2020
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112367760A (en) * | 2020-10-29 | 2021-02-12 | 科华恒盛股份有限公司 | Overcurrent structure, capacitor module and converter |
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