CN109586244A - A kind of symmetrical low sense module of the IGBT full-bridge for breaker - Google Patents
A kind of symmetrical low sense module of the IGBT full-bridge for breaker Download PDFInfo
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- CN109586244A CN109586244A CN201811529949.5A CN201811529949A CN109586244A CN 109586244 A CN109586244 A CN 109586244A CN 201811529949 A CN201811529949 A CN 201811529949A CN 109586244 A CN109586244 A CN 109586244A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
- H02H3/087—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current for dc applications
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Abstract
The invention discloses a kind of symmetrical low sense modules of IGBT full-bridge for breaker.The symmetrical low sense module of the IGBT full-bridge includes the first IGBT press mounting structure, the 2nd IGBT press mounting structure, damping capacitor, damping resistance and connection busbar group;Wherein single IGBT crimping structure once crimps two IGBT, the shared pole C and two kinds of the shared pole E crimping mode is respectively adopted when two IGBT press mounting structure crimping IGBT devices, eliminate the electrical cable inside most of unit, reduce the quantity of electrical cable, reduce loop area, so that structure more compactization of the symmetrical low sense module of IGBT full-bridge, space hold is few, and save the cost;And the shunt inductance of the symmetrical low sense module of the IGBT full-bridge for shifting branch for breaker is substantially reduced with loop inductance.
Description
Technical field
The present invention relates to power electronics fields, more particularly to a kind of symmetrically low sense of the IGBT full-bridge for breaker
Module.
Background technique
Breaker is the core component of disjunction short circuit current in flexible HVDC transmission system, by transfer branch, main branch
Totally 3 branch circuit parallel connections form with energy absorption branch.Main branch therein is by ultrahigh speed mechanical switch and the low sense module of a small amount of bridge
It is in series;The symmetrical low sense block coupled in series of transfer branch routing multipole IGBT full-bridge therein is constituted, for carrying and disjunction in short-term
DC system fault electric current;Energy consumption branch therein routes multiple arrester group parallel connections and constitutes, for inhibiting disjunction overvoltage and suction
Receive energy.
When breaker receives system breaking signal or reaches overcurrent protection threshold values, above-mentioned main branch locking, main branch
The capacitor on road generates voltage difference, forces current commutation to shifting branch.After the main branch electric current whole change of current to transfer branch, quickly
Branch locking is shifted in mechanical switch disjunction later, and electric current is to the capacitor charging for shifting branch, so that breaker both end voltage is rapid
Increase.After disjunction voltage reaches lightning arrestor movement level, fault current is shifted to arrester, arrester absorption system failure electricity
Stream, until current over-zero.
Transfer branch topology is divided into the symmetrical low sense of IGBT full-bridge and diode full-bridge two classes of symmetrical low sense at present, and Fig. 1 is existing
There is the electric topology figure of the symmetrical low sense module of the IGBT full-bridge used in breaker transfer branch.IGBT full-bridge pair shown in FIG. 1
Low sense is claimed to there are problems that following two:
1) symmetrically component number is more in low sense for IGBT full-bridge, and electrical connection is complicated;IGBT full-bridge is symmetrically electrical in low sense
Topology is total to as shown in Figure 1, the symmetrical low sense unit of each IGBT full-bridge includes 4 IGBT, 1 resistance and 1 capacitor, between them
Need 10 electrical cables;
2) symmetrically 4 IGBT require larger pressure assembling force and meet its electric property IGBT full-bridge in low sense, and IGBT is as big
Current high voltage switching tube is in application, silicon-controlled press-fit approach, meeting during Simultaneous Switching must be similar to using appropriate
Generate very high switch overvoltage, it is necessary to use RCD absorbing circuit.But the design of IGBT press mounting structure in the prior art is not
Rationally, cause circuit elongated, parasitic inductance becomes larger, and voltage stress increases when shutdown, and constructional appearance can not meet reality
Application demand.
Summary of the invention
The object of the present invention is to provide a kind of symmetrical low sense modules of IGBT full-bridge for breaker, to solve existing IGBT
The problem that the symmetrical low sense modular electrical connection of full-bridge is complicated and parasitic inductance is big.
To achieve the above object, the present invention provides following schemes:
A kind of symmetrical low sense module of the IGBT full-bridge for breaker, the symmetrical low sense module of the IGBT full-bridge include: the
One IGBT press mounting structure, the 2nd IGBT press mounting structure, damping capacitor, damping resistance and connection busbar group;The first IGBT pressure
Assembling structure and the 2nd IGBT press mounting structure are arranged in parallel;
The first IGBT press mounting structure crimps 2 IGBT, respectively No. 1 IGBT and No. 2 IGBT;The C of No. 1 IGBT
Pole is connected with the pole C of No. 2 IGBT by the total pole C conductive plate;
The 2nd IGBT press mounting structure crimps 2 IGBT, respectively No. 3 IGBT and No. 4 IGBT;The E of No. 3 IGBT
Pole is connected with the pole E of No. 4 IGBT by the total pole E conductive plate;
The connection busbar group includes No. 1 pole the C pole E connection busbar, the connection of No. 2 pole the C pole E busbar, No. 1 damping capacitor busbar
With No. 2 damping capacitor busbars;The pole E of No. 1 IGBT connects the pole C of busbar and No. 3 IGBT by No. 1 pole the C pole E
Connection;The pole E of No. 2 IGBT connects busbar by No. 2 pole the C pole E and connect with the pole C of No. 4 IGBT;
One end of the damping capacitor is connect by No. 1 damping capacitor busbar with the total pole the C conductive plate, the resistance
The other end of Buddhist nun's capacitor is connect by No. 2 damping capacitor busbars with the total pole the E conductive plate;The damping resistance with it is described
Damping capacitor is in parallel.
Optionally, the first IGBT press mounting structure includes sequentially connected first head end flange, the first disc spring group, first
Fixed circle aluminium, No. 2 pole E conductive plates, No. 2 IGBT, the total pole C conductive plate, No. 1 IGBT, No. 1 pole E conductive plate, first be oriented to guide rod,
First guide sleeve and the first flange at tail end.
Optionally, the first IGBT press mounting structure further includes No. 1 epoxy insulation support plate and No. 2 epoxy insulation supports
Plate;The head end of No. 1 epoxy insulation support plate and the head end of No. 2 epoxy insulation support plates are respectively with described first
The both ends of head end flange are fixedly connected;The tail end of No. 1 epoxy insulation support plate and No. 2 epoxy insulation support plates
Tail end be fixedly connected respectively with the both ends of first flange at tail end;No. 1 epoxy insulation support plate and No. 2 epoxies
Insulation support plate is parallel.
Optionally, the pole E of No. 1 IGBT is attached on the conductive plate of No. 1 pole E;The pole E of No. 2 IGBT is attached to institute
It states on No. 2 pole E conductive plates;One end of the total pole the C conductive plate be pressed in the C of No. 1 IGBT extremely on, the total pole the C conductive plate
The other end be pressed in the C of No. 2 IGBT extremely on.
Optionally, the 2nd IGBT press mounting structure includes sequentially connected second head end flange, the second disc spring group, second
Fixed circle aluminium, No. 4 pole C conductive plates, No. 4 IGBT, the total pole E conductive plate, No. 3 IGBT, No. 3 pole C conductive plates, second be oriented to guide rod,
Second guide sleeve and the second flange at tail end.
Optionally, the 2nd IGBT press mounting structure further includes 3 ring oxygen insulation support plate and No. 4 epoxy insulation supports
Plate;The head end of the 3 ring oxygen insulation support plate and the head end of No. 4 epoxy insulation support plates are respectively with described second
The both ends of head end flange are fixedly connected;The tail end of the 3 ring oxygen insulation support plate and No. 4 epoxy insulation support plates
Tail end be fixedly connected respectively with the both ends of second flange at tail end;The 3 ring oxygen insulation support plate and No. 4 epoxies
Insulation support plate is parallel.
Optionally, the pole C of No. 3 IGBT is attached on the conductive plate of No. 3 pole C;The pole C of No. 4 IGBT is attached to institute
It states on No. 4 pole C conductive plates;One end of the total pole the E conductive plate be pressed in the E of No. 3 IGBT extremely on, the total pole the E conductive plate
The other end be pressed in the E of No. 4 IGBT extremely on.
Optionally, one end of No. 1 pole the C pole E connection busbar is connect with No. 1 pole E conductive plate, No. 1 pole the C E
The other end of pole connection busbar is connect with No. 3 pole C conductive plate;No. 2 pole the C pole E connect busbar one end with described No. 2
The other end of the connection of the pole E conductive plate, No. 2 pole the C pole E connection busbar is connect with No. 4 pole C conductive plate.
Optionally, one end of No. 1 damping capacitor busbar is connect with one end of the damping capacitor, No. 1 damping
The other end of capacitor bus-bar is connect with the total pole the C conductive plate;One end of No. 2 damping capacitor busbars and the damping capacitor
Other end connection, the other end of No. 2 damping capacitor busbars connect with the total pole the E conductive plate.
The specific embodiment provided according to the present invention, the invention discloses following technical effects:
The present invention provides a kind of IGBT full-bridge for breaker symmetrically low sense module, including the first IGBT press mounting structure,
2nd IGBT press mounting structure, damping capacitor, damping resistance and connection busbar group;Wherein single IGBT crimping structure once crimps two
The shared pole C and two kinds of the shared pole E crimping mode is respectively adopted in IGBT, whens two IGBT press mounting structures crimping IGBT devices, and
Using short busbar, by damped capacitor, the pole C conductive plate and the total pole E conductive plate are electrically connected together respectively, finally realize open circuit
The press fitting of the symmetrical low sense module of IGBT full-bridge of branch is shifted in device.Technical solution combination IGBT full-bridge provided by the invention is symmetrical
The crimping mode of low inductive circuit and IGBT device feature, the total pole C of the device used the pole E together eliminates inside most of unit
Electrical cable, reduce the quantity of electrical cable.In addition, the total pole C of device together the pole E crimping mode be damping capacitor
The densification of C and damping resistance R installation provide a great convenience, using short busbar can by the two together the pole C conductive plate and
The electrical connection of the total pole E conductive plate, further reduces the size of electrical cable.In addition, IGBT full-bridge pair provided by the invention
Claim low sense module volume structure full symmetric, therefore 4 electrical stress of IGBT are identical, therefore simplifies device and meet with stresses examination
Analysis.And for the symmetrical low sense module of the symmetrical IGBT full-bridge of the present invention, positive operating mode is identical as reverse active mode,
Engineering uses very convenient.Technical solution provided by the invention makes the IGBT full-bridge symmetrically low sense that branch is shifted for breaker
The shunt inductance of module is substantially reduced with loop inductance, and structure more compactization, space hold is few, and save the cost.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without any creative labor, can also mention according to the present invention
The attached drawing of confession obtains other attached drawings.
Fig. 1 is the electric topology figure that existing breaker shifts the symmetrical low sense module of the IGBT full-bridge used in branch;
Fig. 2 is the electric topology figure provided by the present invention for the symmetrical low sense module of IGBT full-bridge of breaker;
Fig. 3 is the overall structure diagram provided by the present invention for the symmetrical low sense module of IGBT full-bridge of breaker;
Fig. 4 is the structural schematic diagram of the first IGBT press mounting structure provided by the invention;
Fig. 5 is the structural schematic diagram of the 2nd IGBT press mounting structure provided by the invention;
Fig. 6 is the press-fit approach schematic diagram of the symmetrical low sense module of IGBT full-bridge provided by the invention.
In Fig. 4,1 is No. 1 epoxy insulation support plate, and 2 be the first flange at tail end, and 3 be the first guiding guide rod, and 4 be No. 1
IGBT, 5 be No. 2 pole E conductive plates, and 6 be the first head end flange, and 7 be the first guide sleeve, and 8 be No. 1 pole E conductive plate, and 9 be damping
Capacitor, 10 be No. 1 damping capacitor busbar, and 11 be the total pole C conductive plate, and 12 be No. 2 IGBT, and 13 be the first fixed circle aluminium, and 14 are
First disc spring group, 15 be No. 2 epoxy insulation support plates.
In Fig. 5,16 be 3 ring oxygen insulation support plate, and 17 be the second flange at tail end, and 18 be the second guiding guide rod, and 19 be No. 3
IGBT, 20 be No. 4 pole C conductive plates, and 21 be the second head end flange, and 22 be the second guide sleeve, and 23 be No. 3 pole C conductive plates, and 24 are
No. 2 damping capacitor busbars, 25 be the total pole E conductive plate, and 26 be No. 4 IGBT, and 27 be the second fixed circle aluminium, and 28 be the second disc spring group,
29 be No. 4 epoxy insulation support plates.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The object of the present invention is to provide a kind of symmetrical low sense modules of IGBT full-bridge for breaker, to solve existing IGBT
The problem that the symmetrical low sense modular electrical connection of full-bridge is complicated and parasitic inductance is big.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
Fig. 2 is the electric topology figure provided by the present invention for the symmetrical low sense module of IGBT full-bridge of breaker.Fig. 3 is this
The overall structure diagram of the symmetrical low sense module of the IGBT full-bridge for breaker provided is provided.Referring to Fig. 3, the present invention is provided
The symmetrical low sense module of the IGBT full-bridge include: that the first IGBT press mounting structure 301, the 2nd IGBT press mounting structure 302, damping are electric
Hold 9, damping resistance (not shown) and connection busbar group 303.The first IGBT press mounting structure 301 and the 2nd IGBT
Press mounting structure 302 is arranged in parallel, and two IGBT press mounting structure mirror symmetries being electrically connected through the connection busbar group 303,
It ensure that the electrical stress of device is identical.To which the space structure of the symmetrical low sense module of the IGBT full-bridge is full symmetric.For right
For the symmetrical low sense modular structure of the IGBT full-bridge of title, positive operating mode is identical as reverse active mode, therefore engineering makes
With very convenient.
Wherein, two crimping IGBT being pressed in the first IGBT press mounting structure 301 share the pole C conductive plate, and described the
Two IGBT being pressed in two IGBT press mounting structures 302 share the pole E conductive plate.In first, second IGBT press mounting structure, IGBT device
Part level is opposite.In the first IGBT press mounting structure, the total pole C conductive plate two sides respectively crimp an IGBT.2nd IGBT
In press mounting structure, the total pole the E conductive plate two sides respectively crimp an IGBT.The total pole the C conductive plate and the total pole the E conductive plate
It is horizontal opposite.The total pole the E conductive plate of the first IGBT press mounting structure and the total pole the C conductive plate of the 2nd IGBT press mounting structure
Pass through short busbar and 9 horizontal connection of damping capacitor respectively.The total pole the E conductive plate is connect with damping capacitor 9 by busbar, described
The total pole C conductive plate is connect with damping capacitor 9 by busbar, and damping resistance is in parallel with damping capacitor 9.
Fig. 4 is the structural schematic diagram of the first IGBT press mounting structure provided by the invention.The first IGBT press mounting structure 301
Crimp 2 IGBT, respectively No. 1 IGBT and No. 2 IGBT;The pole C of No. 1 IGBT and the pole C of No. 2 IGBT pass through total C
The connection of pole conductive plate.
Referring to fig. 4, the first IGBT press mounting structure 301 includes sequentially connected first head end flange 6, the first disc spring group
14, the first fixed the circle pole the E conductive plate 5,2 of aluminium 13,2 IGBT12,11, No. 1 IGBT4 of the total pole C conductive plate, No. 1 pole E conductive plate
8, the first guiding guide rod 3, the first guide sleeve 7 and the first flange at tail end 2.The first IGBT press mounting structure 301 further includes No. 1
Epoxy insulation support plate 1 and No. 2 epoxy insulation support plate 15;The head end and described 2 of No. 1 epoxy insulation support plate 1
The head end of number epoxy insulation support plate 15 is fixedly connected with the both ends of first head end flange 6 respectively;No. 1 epoxy insulation
The tail end of support plate 1 and the tail end of No. 2 epoxy insulation support plates 15 both ends with first flange at tail end 2 respectively
It is fixedly connected;No. 1 epoxy insulation support plate 1 is parallel with No. 2 epoxy insulation support plates 12.
In Fig. 4, the tail end of No. 1 epoxy insulation support plate 1 and No. 2 epoxy insulation support plate 15 respectively with first tail end
The both ends of flange 2 are fastened by fastening screw, the head end difference of No. 1 epoxy insulation support plate 1 and No. 2 epoxy insulation support plate 15
It is fastened with the both ends of first head end flange 6 by fastening screw.One end cap of first guide sleeve 7 is described first
On flange at tail end 2, the first guiding guide rod 3 is stretched out from the other end of first guide sleeve 7.The first guiding guide rod
3 crimp with No. 1 pole E conductive plate 8 by the way that center of circle positioning pin is concentric.No. 1 pole E conductive plate 8 and No. 1 IGBT4 are logical
Center of circle positioning pin is crossed to crimp with one heart.No. 1 IGBT4 is crimped with the total pole the C conductive plate 11 by the way that center of circle positioning pin is concentric.Institute
It states the total pole C conductive plate 11 and is crimped with No. 2 IGBT12 by the way that positioning pin is concentric.No. 2 IGBT12 are led with No. 2 pole E
Battery plate 5 is crimped with one heart by center of circle positioning pin.No. 2 pole E conductive plate 5 and the first fixed circle aluminium 13 are positioned by the center of circle
Pin crimping with one heart.First disc spring group 14 is sleeved on first head end flange 6, and first head end flange 6 is nested in
The center of circle location hole of described first fixed circle aluminium 13.First disc spring group 14 includes 3 pairs of disc spring gaskets.
Wherein, the pole E of No. 1 IGBT4 is attached on No. 1 pole E conductive plate 8;The pole E of No. 2 IGBT12 is attached to
On No. 2 pole E conductive plate 5.One end of the total pole the C conductive plate 11 be pressed in the C of No. 1 IGBT4 extremely on, the total pole C
The other end of conductive plate 11 be pressed in the C of No. 2 IGBT12 extremely on.
Fig. 5 is the structural schematic diagram of the 2nd IGBT press mounting structure provided by the invention.The 2nd IGBT press mounting structure 302
Crimp 2 IGBT, respectively No. 3 IGBT and No. 4 IGBT;The pole E of No. 3 IGBT and the pole E of No. 4 IGBT pass through total E
The connection of pole conductive plate.
Referring to Fig. 5, the 2nd IGBT press mounting structure 302 includes sequentially connected second head end flange 21, the second disc spring
The fixed circle pole the C conductive plate 20,4 of aluminium 27,4 IGBT26 of group 28, second, 25, No. 3 IGBT19 of the total pole E conductive plate, No. 3 poles C are led
Battery plate 23, second is oriented to guide rod 18, the second guide sleeve 22 and the second flange at tail end 17.The 2nd IGBT press mounting structure 302
It further include 3 ring oxygen insulation support plate 16 and No. 4 epoxy insulation support plates 29;The head end of the 3 ring oxygen insulation support plate 16
It is fixedly connected respectively with the both ends of second head end flange 21 with the head end of No. 4 epoxy insulation support plates 29;Institute
The tail end of the tail end and No. 4 epoxy insulation support plates 29 of stating 3 ring oxygen insulation support plate 16 is respectively with described second
The both ends of flange at tail end 17 are fixedly connected;The 3 ring oxygen insulation support plate 16 and No. 4 epoxy insulation support plates 29 are flat
Row.
In Fig. 5, the tail end of 3 ring oxygen insulation board 16 and No. 4 epoxy insulating boards 29 respectively with second flange at tail end 17
Both ends pass through fastening screw fasten;The head end of 3 ring oxygen insulation board 16 and No. 4 epoxy insulating boards 29 is first with described second respectively
The both ends of end flanges 21 are fastened by fastening screw.Second guide sleeve, 22 1 end cap is in second flange at tail end 17
On, the second guiding guide rod 18 is stretched out from the other end of second guide sleeve 22.The second guiding guide rod 18 and institute
No. 3 pole C conductive plates 23 are stated to crimp with one heart by center of circle positioning pin.No. 3 pole E conductive plate 23 passes through with No. 3 IGBT19
Center of circle positioning pin crimps with one heart.No. 3 IGBT19 are crimped with the total pole the E conductive plate 25 by the way that center of circle positioning pin is concentric.Institute
It states the total pole E conductive plate 25 and is crimped with No. 4 IGBT26 by the way that positioning pin is concentric.No. 4 IGBT26 are led with No. 4 pole C
Battery plate 20 is crimped with one heart by center of circle positioning pin.No. 4 pole C conductive plate 20 and the second fixed circle aluminium 27 are fixed by the center of circle
The crimping with one heart of position pin.Second disc spring group 28 is sleeved on the second head end flange 21, and second head end flange 21 is nested in
On the center of circle location hole of second fixed circle aluminium 27.
Wherein, the pole C of No. 3 IGBT19 is attached on No. 3 pole C conductive plate 23;It pastes the pole C of No. 4 IGBT26
On No. 4 pole C conductive plate 20.One end of the total pole the E conductive plate 25 be pressed in the E of No. 3 IGBT19 extremely on, it is described total
The other end of the pole E conductive plate 25 be pressed in the E of No. 4 IGBT26 extremely on.
Fig. 6 is the press-fit approach schematic diagram of the symmetrical low sense module of IGBT full-bridge provided by the invention.As shown in fig. 6, described
Connecting busbar group 303 includes that No. 1 pole the C pole E connection busbar 30, No. 2 pole the C pole E connects 31, No. 1 damping capacitor busbars 10 and 2 of busbar
Number damping capacitor busbar 24.In Fig. 6,23 be No. 3 pole C conductive plates of the 2nd IGBT crimping structure 302, and 25 be the 2nd IGBT crimping
The total pole the E conductive plate of structure 302,30 be No. 4 pole C conductive plates of the 2nd IGBT crimping structure 302, and 24 be No. 2 damping capacitor mothers
Row, 30 be No. 1 pole C, the pole E connection busbar, and 10 be No. 1 damping capacitor busbar, and 5 be No. 2 poles E of the first IGBT crimping structure 301
Conductive plate, 8 be No. 1 pole E conductive plate of the first IGBT crimping structure 301, and 11 be total C grades of conductive plates of the first crimping structure 301,
31 be No. 2 poles C, the pole E connection busbar, and 24 be No. 2 damping capacitor busbars.
On electrical structure, the pole E of No. 1 IGBT connects busbar and No. 3 IGBT's by No. 1 pole the C pole E
The connection of the pole C;The pole E of No. 2 IGBT connects busbar by No. 2 pole the C pole E and connect with the pole C of No. 4 IGBT.It is described
One end of damping capacitor is connect by No. 1 damping capacitor busbar with the total pole the C conductive plate, the damping capacitor it is another
End is connect by No. 2 damping capacitor busbars with the total pole the E conductive plate;The damping resistance and the damping capacitor are simultaneously
Connection.
On practical press mounting structure, one end of No. 1 pole the C pole E connection busbar 30 passes through with No. 1 pole E conductive plate 8
Fastening spiral shell is fixed surely, and the other end and No. 3 pole C conductive plate 23 of No. 1 pole the C pole E connection busbar 30 are fixed by fastening spiral shell
It is fixed.One end of No. 2 pole the C pole E connection busbar 31 is fixed with No. 2 pole E conductive plate 5 by fastening spiral shell surely, and described No. 2
The other end of the pole the C pole E connection busbar 31 is fixed with No. 4 pole C conductive plate 20 by fastening spiral shell surely.
The short busbar of 9 both ends of the damping capacitor connection includes two damping capacitor busbars, respectively No. 1 damping capacitor mother
Row and No. 2 damping capacitor busbars.One end of No. 1 damping capacitor busbar 10 and one end of the damping capacitor 9 pass through fastening
Spiral shell is fixed surely, and the other end of No. 1 damping capacitor busbar 10 is fixed with the total pole the C conductive plate 11 by fastening spiral shell surely.Institute
The one end for stating No. 2 damping capacitor busbars 24 and the other end of the damping capacitor 9 are fixed surely by fastening spiral shell, No. 2 dampings
The other end of capacitor bus-bar 24 is fixed with the total pole the E conductive plate 25 by fastening spiral shell surely.
The electric topology figure of the symmetrical low sense module of IGBT full-bridge of the present invention is as shown in Fig. 2, wherein a indicates incoming-line busbar, b table
Show that outgoing line busbar, IGBT1, IGBT2, IGBT3, IGBT4 respectively indicate No. 1 IGBT, No. 2 IGBT, No. 3 IGBT and No. 4 IGBT, C
For damping capacitor, R is damping resistance.
Damping capacitor C becomes after IGBT1 and IGBT4 locking stores fluid element, until voltage is increased to lightning arrestor movement, hinders
Buffer resistance R is connected in parallel on the two sides damping capacitor C, direction of current flow are as follows:
1, electric current is from the path that a enters are as follows: a → IGBT1 → IGBT2 → b;a→IGBT3→IGBT4→b;
2, after IGBT1 and IGBT4 locking, electric current is from the path that a enters are as follows: and a → IGBT1 → damping capacitor C → IGBT4 →
b;Electric current is from the path that b enters are as follows: b → IGBT2 → damping capacitor C → IGBT3 → a.
In the symmetrical low sense module of IGBT full-bridge provided by the invention, two IGBT press mounting structures are distinguished when crimping IGBT device
Using the shared pole C and two kinds of the shared pole E crimping mode, the IGBT full-bridge symmetrically low sense that branch is shifted in breaker is finally realized
The press fitting of module.Technical solution combination IGBT full-bridge provided by the invention symmetrically low inductive circuit and IGBT device feature, the total C of device
The crimping mode of the pole pole E together eliminates the electrical cable inside most of unit, reduces the quantity of electrical cable.This
Invent provide the total pole C of device together the pole E crimping mode for the densification of damping capacitor C and damping resistance R install provide
Great convenience, using short busbar can the pole E conductive plate be electrically connected the pole C conductive plate together together respectively by the two, further
Reduce the size of electrical cable.
In addition, technical solution provided by the invention makes the symmetrical low sense module of IGBT full-bridge for shifting branch for breaker
Shunt inductance substantially reduced with loop inductance, structure more compactization, space hold is few, and save the cost.The present invention provides
The symmetrical low sense module of IGBT full-bridge dexterously multiple components are become one, compact overall structure, and be easily installed with
Disassembly enables the symmetrical low sense module of IGBT full-bridge to be rapidly performed by assembly, and what be can be convenient safeguard.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.
Used herein a specific example illustrates the principle and implementation of the invention, and above embodiments are said
It is bright to be merely used to help understand the device of the invention and its core concept;At the same time, for those skilled in the art, foundation
Thought of the invention, there will be changes in the specific implementation manner and application range.In conclusion the content of the present specification is not
It is interpreted as limitation of the present invention.
Claims (9)
1. a kind of symmetrical low sense module of IGBT full-bridge for breaker, which is characterized in that the symmetrical low sense mould of the IGBT full-bridge
Block includes: the first IGBT press mounting structure, the 2nd IGBT press mounting structure, damping capacitor, damping resistance and connection busbar group;Described
One IGBT press mounting structure and the 2nd IGBT press mounting structure are arranged in parallel;
The first IGBT press mounting structure crimps 2 IGBT, respectively No. 1 IGBT and No. 2 IGBT;The pole C of No. 1 IGBT and
The pole C of No. 2 IGBT is connected by the total pole C conductive plate;
The 2nd IGBT press mounting structure crimps 2 IGBT, respectively No. 3 IGBT and No. 4 IGBT;The pole E of No. 3 IGBT and
The pole E of No. 4 IGBT is connected by the total pole E conductive plate;
The connection busbar group includes No. 1 pole the C pole E connection busbar, the connection of No. 2 pole the C pole E busbar, No. 1 damping capacitor busbar and 2
Number damping capacitor busbar;The pole E of No. 1 IGBT is connected by the pole C that No. 1 pole the C pole E connects busbar and No. 3 IGBT
It connects;The pole E of No. 2 IGBT connects busbar by No. 2 pole the C pole E and connect with the pole C of No. 4 IGBT;
One end of the damping capacitor is connect by No. 1 damping capacitor busbar with the total pole the C conductive plate, the damping electricity
The other end of appearance is connect by No. 2 damping capacitor busbars with the total pole the E conductive plate;The damping resistance and the damping
Capacitor is in parallel.
2. the symmetrical low sense module of IGBT full-bridge according to claim 1, which is characterized in that the first IGBT press mounting structure
Including sequentially connected first head end flange, the first disc spring group, the first fixed circle aluminium, No. 2 pole E conductive plates, No. 2 IGBT, the total pole C
Conductive plate, No. 1 IGBT, No. 1 pole E conductive plate, the first guiding guide rod, the first guide sleeve and the first flange at tail end.
3. the symmetrical low sense module of IGBT full-bridge according to claim 2, which is characterized in that the first IGBT press mounting structure
It further include No. 1 epoxy insulation support plate and No. 2 epoxy insulation support plates;The head end of No. 1 epoxy insulation support plate and described
The head end of No. 2 epoxy insulation support plates is fixedly connected with the both ends of first head end flange respectively;No. 1 epoxy is exhausted
The tail end of edge support plate and the tail end of No. 2 epoxy insulation support plates are solid with the both ends of first flange at tail end respectively
Fixed connection;No. 1 epoxy insulation support plate is parallel with No. 2 epoxy insulation support plates.
4. the symmetrical low sense module of IGBT full-bridge according to claim 2, which is characterized in that the pole E of No. 1 IGBT is attached to
On the conductive plate of No. 1 pole E;The pole E of No. 2 IGBT is attached on the conductive plate of No. 2 pole E;The one of the total pole the C conductive plate
Side pressure No. 1 IGBT C extremely on, the other end of the total pole the C conductive plate be pressed in the C of No. 2 IGBT extremely on.
5. the symmetrical low sense module of IGBT full-bridge according to claim 4, which is characterized in that the 2nd IGBT press mounting structure
Including sequentially connected second head end flange, the second disc spring group, the second fixed circle aluminium, No. 4 pole C conductive plates, No. 4 IGBT, the total pole E
Conductive plate, No. 3 IGBT, No. 3 pole C conductive plates, the second guiding guide rod, the second guide sleeve and the second flange at tail end.
6. the symmetrical low sense module of IGBT full-bridge according to claim 5, which is characterized in that the 2nd IGBT press mounting structure
It further include 3 ring oxygen insulation support plate and No. 4 epoxy insulation support plates;The head end of the 3 ring oxygen insulation support plate and described
The head end of No. 4 epoxy insulation support plates is fixedly connected with the both ends of second head end flange respectively;The 3 ring oxygen is exhausted
The tail end of edge support plate and the tail end of No. 4 epoxy insulation support plates are solid with the both ends of second flange at tail end respectively
Fixed connection;The 3 ring oxygen insulation support plate is parallel with No. 4 epoxy insulation support plates.
7. the symmetrical low sense module of IGBT full-bridge according to claim 5, which is characterized in that the pole C of No. 3 IGBT is attached to
On the conductive plate of No. 3 pole C;The pole C of No. 4 IGBT is attached on the conductive plate of No. 4 pole C;The one of the total pole the E conductive plate
Side pressure No. 3 IGBT E extremely on, the other end of the total pole the E conductive plate be pressed in the E of No. 4 IGBT extremely on.
8. the symmetrical low sense module of IGBT full-bridge according to claim 7, which is characterized in that the connection of No. 1 pole the C pole E is female
One end of row is connect with No. 1 pole E conductive plate, and the other end and No. 3 C of No. 1 pole the C pole E connection busbar are extremely conductive
Plate connection;One end of No. 2 pole the C pole E connection busbar is connect with No. 2 pole E conductive plate, and the connection of No. 2 pole the C pole E is female
The other end of row is connect with No. 4 pole C conductive plate.
9. the symmetrical low sense module of IGBT full-bridge according to claim 7, which is characterized in that No. 1 damping capacitor busbar
One end connect with one end of the damping capacitor, the other end of No. 1 damping capacitor busbar and the total pole C conductive plate company
It connects;One end of No. 2 damping capacitor busbars is connect with the other end of the damping capacitor, No. 2 damping capacitor busbars
The other end is connect with the total pole the E conductive plate.
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CN201811529949.5A CN109586244B (en) | 2018-12-14 | 2018-12-14 | IGBT full-bridge symmetrical low-inductance module for circuit breaker |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111464164A (en) * | 2020-04-02 | 2020-07-28 | 思源电气股份有限公司 | Three-column compression-joint type cascade trigger switch and compression joint main body structure thereof |
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CN106298756A (en) * | 2016-08-18 | 2017-01-04 | 平高集团有限公司 | A kind of IGBT series connection crimps encapsulation unit and uses the dc circuit breaker of this encapsulation unit |
CN106558864A (en) * | 2015-09-25 | 2017-04-05 | 国网智能电网研究院 | A kind of hybrid Fast DC Circuit Breaker |
CN106611679A (en) * | 2015-10-23 | 2017-05-03 | 国网智能电网研究院 | Full-bridge cascaded high-voltage DC circuit breaker valve module |
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CN106558864A (en) * | 2015-09-25 | 2017-04-05 | 国网智能电网研究院 | A kind of hybrid Fast DC Circuit Breaker |
CN106611679A (en) * | 2015-10-23 | 2017-05-03 | 国网智能电网研究院 | Full-bridge cascaded high-voltage DC circuit breaker valve module |
CN106298756A (en) * | 2016-08-18 | 2017-01-04 | 平高集团有限公司 | A kind of IGBT series connection crimps encapsulation unit and uses the dc circuit breaker of this encapsulation unit |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111464164A (en) * | 2020-04-02 | 2020-07-28 | 思源电气股份有限公司 | Three-column compression-joint type cascade trigger switch and compression joint main body structure thereof |
CN111464164B (en) * | 2020-04-02 | 2023-10-27 | 思源电气股份有限公司 | Three-column compression joint cascade trigger switch and compression joint main body structure thereof |
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