CN109586244A - A kind of symmetrical low sense module of the IGBT full-bridge for breaker - Google Patents

A kind of symmetrical low sense module of the IGBT full-bridge for breaker Download PDF

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Publication number
CN109586244A
CN109586244A CN201811529949.5A CN201811529949A CN109586244A CN 109586244 A CN109586244 A CN 109586244A CN 201811529949 A CN201811529949 A CN 201811529949A CN 109586244 A CN109586244 A CN 109586244A
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pole
igbt
conductive plate
busbar
insulation support
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CN109586244B (en
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齐磊
刘珂鑫
东野忠昊
沈弘
马江江
张晓青
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North China Electric Power University
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North China Electric Power University
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
    • H02H3/087Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current for dc applications

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Abstract

The invention discloses a kind of symmetrical low sense modules of IGBT full-bridge for breaker.The symmetrical low sense module of the IGBT full-bridge includes the first IGBT press mounting structure, the 2nd IGBT press mounting structure, damping capacitor, damping resistance and connection busbar group;Wherein single IGBT crimping structure once crimps two IGBT, the shared pole C and two kinds of the shared pole E crimping mode is respectively adopted when two IGBT press mounting structure crimping IGBT devices, eliminate the electrical cable inside most of unit, reduce the quantity of electrical cable, reduce loop area, so that structure more compactization of the symmetrical low sense module of IGBT full-bridge, space hold is few, and save the cost;And the shunt inductance of the symmetrical low sense module of the IGBT full-bridge for shifting branch for breaker is substantially reduced with loop inductance.

Description

A kind of symmetrical low sense module of the IGBT full-bridge for breaker
Technical field
The present invention relates to power electronics fields, more particularly to a kind of symmetrically low sense of the IGBT full-bridge for breaker Module.
Background technique
Breaker is the core component of disjunction short circuit current in flexible HVDC transmission system, by transfer branch, main branch Totally 3 branch circuit parallel connections form with energy absorption branch.Main branch therein is by ultrahigh speed mechanical switch and the low sense module of a small amount of bridge It is in series;The symmetrical low sense block coupled in series of transfer branch routing multipole IGBT full-bridge therein is constituted, for carrying and disjunction in short-term DC system fault electric current;Energy consumption branch therein routes multiple arrester group parallel connections and constitutes, for inhibiting disjunction overvoltage and suction Receive energy.
When breaker receives system breaking signal or reaches overcurrent protection threshold values, above-mentioned main branch locking, main branch The capacitor on road generates voltage difference, forces current commutation to shifting branch.After the main branch electric current whole change of current to transfer branch, quickly Branch locking is shifted in mechanical switch disjunction later, and electric current is to the capacitor charging for shifting branch, so that breaker both end voltage is rapid Increase.After disjunction voltage reaches lightning arrestor movement level, fault current is shifted to arrester, arrester absorption system failure electricity Stream, until current over-zero.
Transfer branch topology is divided into the symmetrical low sense of IGBT full-bridge and diode full-bridge two classes of symmetrical low sense at present, and Fig. 1 is existing There is the electric topology figure of the symmetrical low sense module of the IGBT full-bridge used in breaker transfer branch.IGBT full-bridge pair shown in FIG. 1 Low sense is claimed to there are problems that following two:
1) symmetrically component number is more in low sense for IGBT full-bridge, and electrical connection is complicated;IGBT full-bridge is symmetrically electrical in low sense Topology is total to as shown in Figure 1, the symmetrical low sense unit of each IGBT full-bridge includes 4 IGBT, 1 resistance and 1 capacitor, between them Need 10 electrical cables;
2) symmetrically 4 IGBT require larger pressure assembling force and meet its electric property IGBT full-bridge in low sense, and IGBT is as big Current high voltage switching tube is in application, silicon-controlled press-fit approach, meeting during Simultaneous Switching must be similar to using appropriate Generate very high switch overvoltage, it is necessary to use RCD absorbing circuit.But the design of IGBT press mounting structure in the prior art is not Rationally, cause circuit elongated, parasitic inductance becomes larger, and voltage stress increases when shutdown, and constructional appearance can not meet reality Application demand.
Summary of the invention
The object of the present invention is to provide a kind of symmetrical low sense modules of IGBT full-bridge for breaker, to solve existing IGBT The problem that the symmetrical low sense modular electrical connection of full-bridge is complicated and parasitic inductance is big.
To achieve the above object, the present invention provides following schemes:
A kind of symmetrical low sense module of the IGBT full-bridge for breaker, the symmetrical low sense module of the IGBT full-bridge include: the One IGBT press mounting structure, the 2nd IGBT press mounting structure, damping capacitor, damping resistance and connection busbar group;The first IGBT pressure Assembling structure and the 2nd IGBT press mounting structure are arranged in parallel;
The first IGBT press mounting structure crimps 2 IGBT, respectively No. 1 IGBT and No. 2 IGBT;The C of No. 1 IGBT Pole is connected with the pole C of No. 2 IGBT by the total pole C conductive plate;
The 2nd IGBT press mounting structure crimps 2 IGBT, respectively No. 3 IGBT and No. 4 IGBT;The E of No. 3 IGBT Pole is connected with the pole E of No. 4 IGBT by the total pole E conductive plate;
The connection busbar group includes No. 1 pole the C pole E connection busbar, the connection of No. 2 pole the C pole E busbar, No. 1 damping capacitor busbar With No. 2 damping capacitor busbars;The pole E of No. 1 IGBT connects the pole C of busbar and No. 3 IGBT by No. 1 pole the C pole E Connection;The pole E of No. 2 IGBT connects busbar by No. 2 pole the C pole E and connect with the pole C of No. 4 IGBT;
One end of the damping capacitor is connect by No. 1 damping capacitor busbar with the total pole the C conductive plate, the resistance The other end of Buddhist nun's capacitor is connect by No. 2 damping capacitor busbars with the total pole the E conductive plate;The damping resistance with it is described Damping capacitor is in parallel.
Optionally, the first IGBT press mounting structure includes sequentially connected first head end flange, the first disc spring group, first Fixed circle aluminium, No. 2 pole E conductive plates, No. 2 IGBT, the total pole C conductive plate, No. 1 IGBT, No. 1 pole E conductive plate, first be oriented to guide rod, First guide sleeve and the first flange at tail end.
Optionally, the first IGBT press mounting structure further includes No. 1 epoxy insulation support plate and No. 2 epoxy insulation supports Plate;The head end of No. 1 epoxy insulation support plate and the head end of No. 2 epoxy insulation support plates are respectively with described first The both ends of head end flange are fixedly connected;The tail end of No. 1 epoxy insulation support plate and No. 2 epoxy insulation support plates Tail end be fixedly connected respectively with the both ends of first flange at tail end;No. 1 epoxy insulation support plate and No. 2 epoxies Insulation support plate is parallel.
Optionally, the pole E of No. 1 IGBT is attached on the conductive plate of No. 1 pole E;The pole E of No. 2 IGBT is attached to institute It states on No. 2 pole E conductive plates;One end of the total pole the C conductive plate be pressed in the C of No. 1 IGBT extremely on, the total pole the C conductive plate The other end be pressed in the C of No. 2 IGBT extremely on.
Optionally, the 2nd IGBT press mounting structure includes sequentially connected second head end flange, the second disc spring group, second Fixed circle aluminium, No. 4 pole C conductive plates, No. 4 IGBT, the total pole E conductive plate, No. 3 IGBT, No. 3 pole C conductive plates, second be oriented to guide rod, Second guide sleeve and the second flange at tail end.
Optionally, the 2nd IGBT press mounting structure further includes 3 ring oxygen insulation support plate and No. 4 epoxy insulation supports Plate;The head end of the 3 ring oxygen insulation support plate and the head end of No. 4 epoxy insulation support plates are respectively with described second The both ends of head end flange are fixedly connected;The tail end of the 3 ring oxygen insulation support plate and No. 4 epoxy insulation support plates Tail end be fixedly connected respectively with the both ends of second flange at tail end;The 3 ring oxygen insulation support plate and No. 4 epoxies Insulation support plate is parallel.
Optionally, the pole C of No. 3 IGBT is attached on the conductive plate of No. 3 pole C;The pole C of No. 4 IGBT is attached to institute It states on No. 4 pole C conductive plates;One end of the total pole the E conductive plate be pressed in the E of No. 3 IGBT extremely on, the total pole the E conductive plate The other end be pressed in the E of No. 4 IGBT extremely on.
Optionally, one end of No. 1 pole the C pole E connection busbar is connect with No. 1 pole E conductive plate, No. 1 pole the C E The other end of pole connection busbar is connect with No. 3 pole C conductive plate;No. 2 pole the C pole E connect busbar one end with described No. 2 The other end of the connection of the pole E conductive plate, No. 2 pole the C pole E connection busbar is connect with No. 4 pole C conductive plate.
Optionally, one end of No. 1 damping capacitor busbar is connect with one end of the damping capacitor, No. 1 damping The other end of capacitor bus-bar is connect with the total pole the C conductive plate;One end of No. 2 damping capacitor busbars and the damping capacitor Other end connection, the other end of No. 2 damping capacitor busbars connect with the total pole the E conductive plate.
The specific embodiment provided according to the present invention, the invention discloses following technical effects:
The present invention provides a kind of IGBT full-bridge for breaker symmetrically low sense module, including the first IGBT press mounting structure, 2nd IGBT press mounting structure, damping capacitor, damping resistance and connection busbar group;Wherein single IGBT crimping structure once crimps two The shared pole C and two kinds of the shared pole E crimping mode is respectively adopted in IGBT, whens two IGBT press mounting structures crimping IGBT devices, and Using short busbar, by damped capacitor, the pole C conductive plate and the total pole E conductive plate are electrically connected together respectively, finally realize open circuit The press fitting of the symmetrical low sense module of IGBT full-bridge of branch is shifted in device.Technical solution combination IGBT full-bridge provided by the invention is symmetrical The crimping mode of low inductive circuit and IGBT device feature, the total pole C of the device used the pole E together eliminates inside most of unit Electrical cable, reduce the quantity of electrical cable.In addition, the total pole C of device together the pole E crimping mode be damping capacitor The densification of C and damping resistance R installation provide a great convenience, using short busbar can by the two together the pole C conductive plate and The electrical connection of the total pole E conductive plate, further reduces the size of electrical cable.In addition, IGBT full-bridge pair provided by the invention Claim low sense module volume structure full symmetric, therefore 4 electrical stress of IGBT are identical, therefore simplifies device and meet with stresses examination Analysis.And for the symmetrical low sense module of the symmetrical IGBT full-bridge of the present invention, positive operating mode is identical as reverse active mode, Engineering uses very convenient.Technical solution provided by the invention makes the IGBT full-bridge symmetrically low sense that branch is shifted for breaker The shunt inductance of module is substantially reduced with loop inductance, and structure more compactization, space hold is few, and save the cost.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention Example, for those of ordinary skill in the art, without any creative labor, can also mention according to the present invention The attached drawing of confession obtains other attached drawings.
Fig. 1 is the electric topology figure that existing breaker shifts the symmetrical low sense module of the IGBT full-bridge used in branch;
Fig. 2 is the electric topology figure provided by the present invention for the symmetrical low sense module of IGBT full-bridge of breaker;
Fig. 3 is the overall structure diagram provided by the present invention for the symmetrical low sense module of IGBT full-bridge of breaker;
Fig. 4 is the structural schematic diagram of the first IGBT press mounting structure provided by the invention;
Fig. 5 is the structural schematic diagram of the 2nd IGBT press mounting structure provided by the invention;
Fig. 6 is the press-fit approach schematic diagram of the symmetrical low sense module of IGBT full-bridge provided by the invention.
In Fig. 4,1 is No. 1 epoxy insulation support plate, and 2 be the first flange at tail end, and 3 be the first guiding guide rod, and 4 be No. 1 IGBT, 5 be No. 2 pole E conductive plates, and 6 be the first head end flange, and 7 be the first guide sleeve, and 8 be No. 1 pole E conductive plate, and 9 be damping Capacitor, 10 be No. 1 damping capacitor busbar, and 11 be the total pole C conductive plate, and 12 be No. 2 IGBT, and 13 be the first fixed circle aluminium, and 14 are First disc spring group, 15 be No. 2 epoxy insulation support plates.
In Fig. 5,16 be 3 ring oxygen insulation support plate, and 17 be the second flange at tail end, and 18 be the second guiding guide rod, and 19 be No. 3 IGBT, 20 be No. 4 pole C conductive plates, and 21 be the second head end flange, and 22 be the second guide sleeve, and 23 be No. 3 pole C conductive plates, and 24 are No. 2 damping capacitor busbars, 25 be the total pole E conductive plate, and 26 be No. 4 IGBT, and 27 be the second fixed circle aluminium, and 28 be the second disc spring group, 29 be No. 4 epoxy insulation support plates.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other Embodiment shall fall within the protection scope of the present invention.
The object of the present invention is to provide a kind of symmetrical low sense modules of IGBT full-bridge for breaker, to solve existing IGBT The problem that the symmetrical low sense modular electrical connection of full-bridge is complicated and parasitic inductance is big.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real Applying mode, the present invention is described in further detail.
Fig. 2 is the electric topology figure provided by the present invention for the symmetrical low sense module of IGBT full-bridge of breaker.Fig. 3 is this The overall structure diagram of the symmetrical low sense module of the IGBT full-bridge for breaker provided is provided.Referring to Fig. 3, the present invention is provided The symmetrical low sense module of the IGBT full-bridge include: that the first IGBT press mounting structure 301, the 2nd IGBT press mounting structure 302, damping are electric Hold 9, damping resistance (not shown) and connection busbar group 303.The first IGBT press mounting structure 301 and the 2nd IGBT Press mounting structure 302 is arranged in parallel, and two IGBT press mounting structure mirror symmetries being electrically connected through the connection busbar group 303, It ensure that the electrical stress of device is identical.To which the space structure of the symmetrical low sense module of the IGBT full-bridge is full symmetric.For right For the symmetrical low sense modular structure of the IGBT full-bridge of title, positive operating mode is identical as reverse active mode, therefore engineering makes With very convenient.
Wherein, two crimping IGBT being pressed in the first IGBT press mounting structure 301 share the pole C conductive plate, and described the Two IGBT being pressed in two IGBT press mounting structures 302 share the pole E conductive plate.In first, second IGBT press mounting structure, IGBT device Part level is opposite.In the first IGBT press mounting structure, the total pole C conductive plate two sides respectively crimp an IGBT.2nd IGBT In press mounting structure, the total pole the E conductive plate two sides respectively crimp an IGBT.The total pole the C conductive plate and the total pole the E conductive plate It is horizontal opposite.The total pole the E conductive plate of the first IGBT press mounting structure and the total pole the C conductive plate of the 2nd IGBT press mounting structure Pass through short busbar and 9 horizontal connection of damping capacitor respectively.The total pole the E conductive plate is connect with damping capacitor 9 by busbar, described The total pole C conductive plate is connect with damping capacitor 9 by busbar, and damping resistance is in parallel with damping capacitor 9.
Fig. 4 is the structural schematic diagram of the first IGBT press mounting structure provided by the invention.The first IGBT press mounting structure 301 Crimp 2 IGBT, respectively No. 1 IGBT and No. 2 IGBT;The pole C of No. 1 IGBT and the pole C of No. 2 IGBT pass through total C The connection of pole conductive plate.
Referring to fig. 4, the first IGBT press mounting structure 301 includes sequentially connected first head end flange 6, the first disc spring group 14, the first fixed the circle pole the E conductive plate 5,2 of aluminium 13,2 IGBT12,11, No. 1 IGBT4 of the total pole C conductive plate, No. 1 pole E conductive plate 8, the first guiding guide rod 3, the first guide sleeve 7 and the first flange at tail end 2.The first IGBT press mounting structure 301 further includes No. 1 Epoxy insulation support plate 1 and No. 2 epoxy insulation support plate 15;The head end and described 2 of No. 1 epoxy insulation support plate 1 The head end of number epoxy insulation support plate 15 is fixedly connected with the both ends of first head end flange 6 respectively;No. 1 epoxy insulation The tail end of support plate 1 and the tail end of No. 2 epoxy insulation support plates 15 both ends with first flange at tail end 2 respectively It is fixedly connected;No. 1 epoxy insulation support plate 1 is parallel with No. 2 epoxy insulation support plates 12.
In Fig. 4, the tail end of No. 1 epoxy insulation support plate 1 and No. 2 epoxy insulation support plate 15 respectively with first tail end The both ends of flange 2 are fastened by fastening screw, the head end difference of No. 1 epoxy insulation support plate 1 and No. 2 epoxy insulation support plate 15 It is fastened with the both ends of first head end flange 6 by fastening screw.One end cap of first guide sleeve 7 is described first On flange at tail end 2, the first guiding guide rod 3 is stretched out from the other end of first guide sleeve 7.The first guiding guide rod 3 crimp with No. 1 pole E conductive plate 8 by the way that center of circle positioning pin is concentric.No. 1 pole E conductive plate 8 and No. 1 IGBT4 are logical Center of circle positioning pin is crossed to crimp with one heart.No. 1 IGBT4 is crimped with the total pole the C conductive plate 11 by the way that center of circle positioning pin is concentric.Institute It states the total pole C conductive plate 11 and is crimped with No. 2 IGBT12 by the way that positioning pin is concentric.No. 2 IGBT12 are led with No. 2 pole E Battery plate 5 is crimped with one heart by center of circle positioning pin.No. 2 pole E conductive plate 5 and the first fixed circle aluminium 13 are positioned by the center of circle Pin crimping with one heart.First disc spring group 14 is sleeved on first head end flange 6, and first head end flange 6 is nested in The center of circle location hole of described first fixed circle aluminium 13.First disc spring group 14 includes 3 pairs of disc spring gaskets.
Wherein, the pole E of No. 1 IGBT4 is attached on No. 1 pole E conductive plate 8;The pole E of No. 2 IGBT12 is attached to On No. 2 pole E conductive plate 5.One end of the total pole the C conductive plate 11 be pressed in the C of No. 1 IGBT4 extremely on, the total pole C The other end of conductive plate 11 be pressed in the C of No. 2 IGBT12 extremely on.
Fig. 5 is the structural schematic diagram of the 2nd IGBT press mounting structure provided by the invention.The 2nd IGBT press mounting structure 302 Crimp 2 IGBT, respectively No. 3 IGBT and No. 4 IGBT;The pole E of No. 3 IGBT and the pole E of No. 4 IGBT pass through total E The connection of pole conductive plate.
Referring to Fig. 5, the 2nd IGBT press mounting structure 302 includes sequentially connected second head end flange 21, the second disc spring The fixed circle pole the C conductive plate 20,4 of aluminium 27,4 IGBT26 of group 28, second, 25, No. 3 IGBT19 of the total pole E conductive plate, No. 3 poles C are led Battery plate 23, second is oriented to guide rod 18, the second guide sleeve 22 and the second flange at tail end 17.The 2nd IGBT press mounting structure 302 It further include 3 ring oxygen insulation support plate 16 and No. 4 epoxy insulation support plates 29;The head end of the 3 ring oxygen insulation support plate 16 It is fixedly connected respectively with the both ends of second head end flange 21 with the head end of No. 4 epoxy insulation support plates 29;Institute The tail end of the tail end and No. 4 epoxy insulation support plates 29 of stating 3 ring oxygen insulation support plate 16 is respectively with described second The both ends of flange at tail end 17 are fixedly connected;The 3 ring oxygen insulation support plate 16 and No. 4 epoxy insulation support plates 29 are flat Row.
In Fig. 5, the tail end of 3 ring oxygen insulation board 16 and No. 4 epoxy insulating boards 29 respectively with second flange at tail end 17 Both ends pass through fastening screw fasten;The head end of 3 ring oxygen insulation board 16 and No. 4 epoxy insulating boards 29 is first with described second respectively The both ends of end flanges 21 are fastened by fastening screw.Second guide sleeve, 22 1 end cap is in second flange at tail end 17 On, the second guiding guide rod 18 is stretched out from the other end of second guide sleeve 22.The second guiding guide rod 18 and institute No. 3 pole C conductive plates 23 are stated to crimp with one heart by center of circle positioning pin.No. 3 pole E conductive plate 23 passes through with No. 3 IGBT19 Center of circle positioning pin crimps with one heart.No. 3 IGBT19 are crimped with the total pole the E conductive plate 25 by the way that center of circle positioning pin is concentric.Institute It states the total pole E conductive plate 25 and is crimped with No. 4 IGBT26 by the way that positioning pin is concentric.No. 4 IGBT26 are led with No. 4 pole C Battery plate 20 is crimped with one heart by center of circle positioning pin.No. 4 pole C conductive plate 20 and the second fixed circle aluminium 27 are fixed by the center of circle The crimping with one heart of position pin.Second disc spring group 28 is sleeved on the second head end flange 21, and second head end flange 21 is nested in On the center of circle location hole of second fixed circle aluminium 27.
Wherein, the pole C of No. 3 IGBT19 is attached on No. 3 pole C conductive plate 23;It pastes the pole C of No. 4 IGBT26 On No. 4 pole C conductive plate 20.One end of the total pole the E conductive plate 25 be pressed in the E of No. 3 IGBT19 extremely on, it is described total The other end of the pole E conductive plate 25 be pressed in the E of No. 4 IGBT26 extremely on.
Fig. 6 is the press-fit approach schematic diagram of the symmetrical low sense module of IGBT full-bridge provided by the invention.As shown in fig. 6, described Connecting busbar group 303 includes that No. 1 pole the C pole E connection busbar 30, No. 2 pole the C pole E connects 31, No. 1 damping capacitor busbars 10 and 2 of busbar Number damping capacitor busbar 24.In Fig. 6,23 be No. 3 pole C conductive plates of the 2nd IGBT crimping structure 302, and 25 be the 2nd IGBT crimping The total pole the E conductive plate of structure 302,30 be No. 4 pole C conductive plates of the 2nd IGBT crimping structure 302, and 24 be No. 2 damping capacitor mothers Row, 30 be No. 1 pole C, the pole E connection busbar, and 10 be No. 1 damping capacitor busbar, and 5 be No. 2 poles E of the first IGBT crimping structure 301 Conductive plate, 8 be No. 1 pole E conductive plate of the first IGBT crimping structure 301, and 11 be total C grades of conductive plates of the first crimping structure 301, 31 be No. 2 poles C, the pole E connection busbar, and 24 be No. 2 damping capacitor busbars.
On electrical structure, the pole E of No. 1 IGBT connects busbar and No. 3 IGBT's by No. 1 pole the C pole E The connection of the pole C;The pole E of No. 2 IGBT connects busbar by No. 2 pole the C pole E and connect with the pole C of No. 4 IGBT.It is described One end of damping capacitor is connect by No. 1 damping capacitor busbar with the total pole the C conductive plate, the damping capacitor it is another End is connect by No. 2 damping capacitor busbars with the total pole the E conductive plate;The damping resistance and the damping capacitor are simultaneously Connection.
On practical press mounting structure, one end of No. 1 pole the C pole E connection busbar 30 passes through with No. 1 pole E conductive plate 8 Fastening spiral shell is fixed surely, and the other end and No. 3 pole C conductive plate 23 of No. 1 pole the C pole E connection busbar 30 are fixed by fastening spiral shell It is fixed.One end of No. 2 pole the C pole E connection busbar 31 is fixed with No. 2 pole E conductive plate 5 by fastening spiral shell surely, and described No. 2 The other end of the pole the C pole E connection busbar 31 is fixed with No. 4 pole C conductive plate 20 by fastening spiral shell surely.
The short busbar of 9 both ends of the damping capacitor connection includes two damping capacitor busbars, respectively No. 1 damping capacitor mother Row and No. 2 damping capacitor busbars.One end of No. 1 damping capacitor busbar 10 and one end of the damping capacitor 9 pass through fastening Spiral shell is fixed surely, and the other end of No. 1 damping capacitor busbar 10 is fixed with the total pole the C conductive plate 11 by fastening spiral shell surely.Institute The one end for stating No. 2 damping capacitor busbars 24 and the other end of the damping capacitor 9 are fixed surely by fastening spiral shell, No. 2 dampings The other end of capacitor bus-bar 24 is fixed with the total pole the E conductive plate 25 by fastening spiral shell surely.
The electric topology figure of the symmetrical low sense module of IGBT full-bridge of the present invention is as shown in Fig. 2, wherein a indicates incoming-line busbar, b table Show that outgoing line busbar, IGBT1, IGBT2, IGBT3, IGBT4 respectively indicate No. 1 IGBT, No. 2 IGBT, No. 3 IGBT and No. 4 IGBT, C For damping capacitor, R is damping resistance.
Damping capacitor C becomes after IGBT1 and IGBT4 locking stores fluid element, until voltage is increased to lightning arrestor movement, hinders Buffer resistance R is connected in parallel on the two sides damping capacitor C, direction of current flow are as follows:
1, electric current is from the path that a enters are as follows: a → IGBT1 → IGBT2 → b;a→IGBT3→IGBT4→b;
2, after IGBT1 and IGBT4 locking, electric current is from the path that a enters are as follows: and a → IGBT1 → damping capacitor C → IGBT4 → b;Electric current is from the path that b enters are as follows: b → IGBT2 → damping capacitor C → IGBT3 → a.
In the symmetrical low sense module of IGBT full-bridge provided by the invention, two IGBT press mounting structures are distinguished when crimping IGBT device Using the shared pole C and two kinds of the shared pole E crimping mode, the IGBT full-bridge symmetrically low sense that branch is shifted in breaker is finally realized The press fitting of module.Technical solution combination IGBT full-bridge provided by the invention symmetrically low inductive circuit and IGBT device feature, the total C of device The crimping mode of the pole pole E together eliminates the electrical cable inside most of unit, reduces the quantity of electrical cable.This Invent provide the total pole C of device together the pole E crimping mode for the densification of damping capacitor C and damping resistance R install provide Great convenience, using short busbar can the pole E conductive plate be electrically connected the pole C conductive plate together together respectively by the two, further Reduce the size of electrical cable.
In addition, technical solution provided by the invention makes the symmetrical low sense module of IGBT full-bridge for shifting branch for breaker Shunt inductance substantially reduced with loop inductance, structure more compactization, space hold is few, and save the cost.The present invention provides The symmetrical low sense module of IGBT full-bridge dexterously multiple components are become one, compact overall structure, and be easily installed with Disassembly enables the symmetrical low sense module of IGBT full-bridge to be rapidly performed by assembly, and what be can be convenient safeguard.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other The difference of embodiment, the same or similar parts in each embodiment may refer to each other.
Used herein a specific example illustrates the principle and implementation of the invention, and above embodiments are said It is bright to be merely used to help understand the device of the invention and its core concept;At the same time, for those skilled in the art, foundation Thought of the invention, there will be changes in the specific implementation manner and application range.In conclusion the content of the present specification is not It is interpreted as limitation of the present invention.

Claims (9)

1. a kind of symmetrical low sense module of IGBT full-bridge for breaker, which is characterized in that the symmetrical low sense mould of the IGBT full-bridge Block includes: the first IGBT press mounting structure, the 2nd IGBT press mounting structure, damping capacitor, damping resistance and connection busbar group;Described One IGBT press mounting structure and the 2nd IGBT press mounting structure are arranged in parallel;
The first IGBT press mounting structure crimps 2 IGBT, respectively No. 1 IGBT and No. 2 IGBT;The pole C of No. 1 IGBT and The pole C of No. 2 IGBT is connected by the total pole C conductive plate;
The 2nd IGBT press mounting structure crimps 2 IGBT, respectively No. 3 IGBT and No. 4 IGBT;The pole E of No. 3 IGBT and The pole E of No. 4 IGBT is connected by the total pole E conductive plate;
The connection busbar group includes No. 1 pole the C pole E connection busbar, the connection of No. 2 pole the C pole E busbar, No. 1 damping capacitor busbar and 2 Number damping capacitor busbar;The pole E of No. 1 IGBT is connected by the pole C that No. 1 pole the C pole E connects busbar and No. 3 IGBT It connects;The pole E of No. 2 IGBT connects busbar by No. 2 pole the C pole E and connect with the pole C of No. 4 IGBT;
One end of the damping capacitor is connect by No. 1 damping capacitor busbar with the total pole the C conductive plate, the damping electricity The other end of appearance is connect by No. 2 damping capacitor busbars with the total pole the E conductive plate;The damping resistance and the damping Capacitor is in parallel.
2. the symmetrical low sense module of IGBT full-bridge according to claim 1, which is characterized in that the first IGBT press mounting structure Including sequentially connected first head end flange, the first disc spring group, the first fixed circle aluminium, No. 2 pole E conductive plates, No. 2 IGBT, the total pole C Conductive plate, No. 1 IGBT, No. 1 pole E conductive plate, the first guiding guide rod, the first guide sleeve and the first flange at tail end.
3. the symmetrical low sense module of IGBT full-bridge according to claim 2, which is characterized in that the first IGBT press mounting structure It further include No. 1 epoxy insulation support plate and No. 2 epoxy insulation support plates;The head end of No. 1 epoxy insulation support plate and described The head end of No. 2 epoxy insulation support plates is fixedly connected with the both ends of first head end flange respectively;No. 1 epoxy is exhausted The tail end of edge support plate and the tail end of No. 2 epoxy insulation support plates are solid with the both ends of first flange at tail end respectively Fixed connection;No. 1 epoxy insulation support plate is parallel with No. 2 epoxy insulation support plates.
4. the symmetrical low sense module of IGBT full-bridge according to claim 2, which is characterized in that the pole E of No. 1 IGBT is attached to On the conductive plate of No. 1 pole E;The pole E of No. 2 IGBT is attached on the conductive plate of No. 2 pole E;The one of the total pole the C conductive plate Side pressure No. 1 IGBT C extremely on, the other end of the total pole the C conductive plate be pressed in the C of No. 2 IGBT extremely on.
5. the symmetrical low sense module of IGBT full-bridge according to claim 4, which is characterized in that the 2nd IGBT press mounting structure Including sequentially connected second head end flange, the second disc spring group, the second fixed circle aluminium, No. 4 pole C conductive plates, No. 4 IGBT, the total pole E Conductive plate, No. 3 IGBT, No. 3 pole C conductive plates, the second guiding guide rod, the second guide sleeve and the second flange at tail end.
6. the symmetrical low sense module of IGBT full-bridge according to claim 5, which is characterized in that the 2nd IGBT press mounting structure It further include 3 ring oxygen insulation support plate and No. 4 epoxy insulation support plates;The head end of the 3 ring oxygen insulation support plate and described The head end of No. 4 epoxy insulation support plates is fixedly connected with the both ends of second head end flange respectively;The 3 ring oxygen is exhausted The tail end of edge support plate and the tail end of No. 4 epoxy insulation support plates are solid with the both ends of second flange at tail end respectively Fixed connection;The 3 ring oxygen insulation support plate is parallel with No. 4 epoxy insulation support plates.
7. the symmetrical low sense module of IGBT full-bridge according to claim 5, which is characterized in that the pole C of No. 3 IGBT is attached to On the conductive plate of No. 3 pole C;The pole C of No. 4 IGBT is attached on the conductive plate of No. 4 pole C;The one of the total pole the E conductive plate Side pressure No. 3 IGBT E extremely on, the other end of the total pole the E conductive plate be pressed in the E of No. 4 IGBT extremely on.
8. the symmetrical low sense module of IGBT full-bridge according to claim 7, which is characterized in that the connection of No. 1 pole the C pole E is female One end of row is connect with No. 1 pole E conductive plate, and the other end and No. 3 C of No. 1 pole the C pole E connection busbar are extremely conductive Plate connection;One end of No. 2 pole the C pole E connection busbar is connect with No. 2 pole E conductive plate, and the connection of No. 2 pole the C pole E is female The other end of row is connect with No. 4 pole C conductive plate.
9. the symmetrical low sense module of IGBT full-bridge according to claim 7, which is characterized in that No. 1 damping capacitor busbar One end connect with one end of the damping capacitor, the other end of No. 1 damping capacitor busbar and the total pole C conductive plate company It connects;One end of No. 2 damping capacitor busbars is connect with the other end of the damping capacitor, No. 2 damping capacitor busbars The other end is connect with the total pole the E conductive plate.
CN201811529949.5A 2018-12-14 2018-12-14 IGBT full-bridge symmetrical low-inductance module for circuit breaker Active CN109586244B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111464164A (en) * 2020-04-02 2020-07-28 思源电气股份有限公司 Three-column compression-joint type cascade trigger switch and compression joint main body structure thereof

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CN106298756A (en) * 2016-08-18 2017-01-04 平高集团有限公司 A kind of IGBT series connection crimps encapsulation unit and uses the dc circuit breaker of this encapsulation unit
CN106558864A (en) * 2015-09-25 2017-04-05 国网智能电网研究院 A kind of hybrid Fast DC Circuit Breaker
CN106611679A (en) * 2015-10-23 2017-05-03 国网智能电网研究院 Full-bridge cascaded high-voltage DC circuit breaker valve module

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CN106558864A (en) * 2015-09-25 2017-04-05 国网智能电网研究院 A kind of hybrid Fast DC Circuit Breaker
CN106611679A (en) * 2015-10-23 2017-05-03 国网智能电网研究院 Full-bridge cascaded high-voltage DC circuit breaker valve module
CN106298756A (en) * 2016-08-18 2017-01-04 平高集团有限公司 A kind of IGBT series connection crimps encapsulation unit and uses the dc circuit breaker of this encapsulation unit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111464164A (en) * 2020-04-02 2020-07-28 思源电气股份有限公司 Three-column compression-joint type cascade trigger switch and compression joint main body structure thereof
CN111464164B (en) * 2020-04-02 2023-10-27 思源电气股份有限公司 Three-column compression joint cascade trigger switch and compression joint main body structure thereof

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