CN208597026U - A kind of diode full-bridge twin-stage submodule for breaker - Google Patents
A kind of diode full-bridge twin-stage submodule for breaker Download PDFInfo
- Publication number
- CN208597026U CN208597026U CN201821170118.9U CN201821170118U CN208597026U CN 208597026 U CN208597026 U CN 208597026U CN 201821170118 U CN201821170118 U CN 201821170118U CN 208597026 U CN208597026 U CN 208597026U
- Authority
- CN
- China
- Prior art keywords
- diode
- plate
- igbt
- conduction plate
- mounting structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 34
- 238000003825 pressing Methods 0.000 claims description 56
- 238000002955 isolation Methods 0.000 claims description 30
- 238000009413 insulation Methods 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 abstract description 15
- 238000009434 installation Methods 0.000 abstract description 5
- 239000000306 component Substances 0.000 description 18
- 238000010586 diagram Methods 0.000 description 9
- 238000004590 computer program Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 210000000282 Nails Anatomy 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006011 modification reaction Methods 0.000 description 1
- 230000003287 optical Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Abstract
The utility model provides a kind of diode full-bridge twin-stage submodule for breaker, including frame, IGBT press mounting structure, diode press mounting structure, equalizing resistance R2, equalizing resistance R4, charging capacitor C1 and charging capacitor C2；IGBT press mounting structure and diode press mounting structure are each attached on frame, diode press mounting structure one end connects IGBT press mounting structure, the other end connects charging capacitor C1 and charging capacitor C2, semiconductor components and devices quantity is relatively fewer, electrical connection is simple, wiring difficulty is small and at low cost, the utility model block passes through first cascade busbar, second laminated bus bar, third laminated bus bar and the 4th laminated bus bar are as electrical cable, compact overall structure, it is installed using entire submodule as unit, it is dismantled using IGBT press mounting structure and diode press mounting structure as unit, installation and removal are convenient, it is easy to maintain, and press pack semiconductor component more as far as possible, reduce the overall weight of submodule.
Description
Technical field
The present invention relates to power electronics fields, and in particular to a kind of diode full-bridge twin-stage submodule for breaker
Block.
Background technique
Breaker is the core component of disjunction short circuit current in flexible HVDC transmission system.Breaker is by transfer branch, master
3 branch, energy absorption branch parallel branch compositions.Main branch is by ultrahigh speed mechanical switch and a small amount of full-bridge modules series connection structure
At；It is in series to shift branch routing multilevel diode full-bridge modules, for carrying and disjunction DC system fault electric current in short-term；Consumption
Energy branch routes multiple arrester group parallel connections and constitutes, for inhibiting disjunction overvoltage and absorbing energy.
System breaking signal is received, or reaches overcurrent protection threshold values, main branch locking, main branch capacitor generates pressure
Difference forces current commutation to shifting branch.After the main through-flow branch current whole change of current to transfer branch, Fast mechanical switch point
It is disconnected.After high-speed switch disjunction, transfer branch locking, electric current gives transfer branch capacitor charging, and breaker both end voltage increases rapidly.
After disjunction voltage reaches lightning arrestor movement level, fault current is shifted to arrester, arrester absorption system fault current.
Transfer branch topology is divided into two class of IGBT full-bridge and diode full-bridge at present, and wherein IGBT full-bridge topology unit needs
4 IGBT, higher cost；Diode full-bridge topology unit therein only needs 2 IGBT, and diode full-bridge topology will save nearly one
Half cost.But there is following two in diode full-bridge topology:
1) since each diode full-bridge subelement includes: 5 diodes, 2 IGBT, 2 resistance and 1 capacitor.Often
11 electrical connections are needed between semiconductor components and devices (i.e. diode and IGBT), capacitor in a diode full-bridge subelement altogether
Line, semiconductor components and devices quantity is more, and electrical connection is complicated；
2) 7 semiconductor components and devices (i.e. 2 diodes and 5 IGBT) of diode full-bridge subelement require larger pressure
Dress power meets its electric property, and traditional semiconductor components and devices press fitting is all pressed (i.e. 7-9 semiconductor components and devices using big component
It is pressed with cascade), there is electrical cable between 7 semiconductor components and devices, according to big modularity, semiconductor element device
Wiring difficulty is big between part, this brings very big difficulty to the I& M of diode full-bridge.
Summary of the invention
The above-mentioned quantity of semiconductor components and devices in the prior art is more, electrical connection is complicated, wiring difficulty is big in order to overcome and
Deficiency at high cost, the present invention provide a kind of diode full-bridge twin-stage submodule for breaker, including frame, IGBT press fitting
Structure, diode press mounting structure, equalizing resistance R2, equalizing resistance R4, the charging capacitor C1 in parallel with equalizing resistance R2 and with
The charging capacitor C2 of equalizing resistance R4 parallel connection；IGBT press mounting structure and diode press mounting structure are each attached on frame, diode
Press mounting structure one end connects IGBT press mounting structure by first cascade busbar and the second laminated bus bar, and the other end is laminated by third
Busbar and the 4th laminated bus bar are separately connected charging capacitor C1 and charging capacitor C2, and semiconductor components and devices quantity is relatively fewer, electricity
Gas connection is simple, and wiring difficulty is small and at low cost.
In order to achieve the above-mentioned object of the invention, the present invention adopts the following technical scheme that:
The present invention provides a kind of diode full-bridge twin-stage submodule for breaker, including frame, IGBT press mounting structure,
Diode press mounting structure, equalizing resistance R2, equalizing resistance R4, the charging capacitor C1 in parallel with equalizing resistance R2 and with equal piezoelectricity
Hinder the charging capacitor C2 of R4 parallel connection；
The IGBT press mounting structure and diode press mounting structure are each attached on frame, diode press mounting structure one end
IGBT press mounting structure is connected by first cascade busbar and the second laminated bus bar, the other end passes through third laminated bus bar and the 4th layer
Folded busbar is separately connected charging capacitor C1 and charging capacitor C2.
The IGBT press mounting structure include IGBT fastening screw, IGBT disc spring and the first IGBT pressing plate successively crimped,
First IGBT insulation board, the first IGBT conductive plate, IGBT1, the 2nd IGBT conductive plate, IGBT2, the 3rd IGBT conductive plate, second
IGBT insulation board, the 4th IGBT conductive plate, IGBT3, the 5th IGBT conductive plate, IGBT4, the 6th IGBT conductive plate, the 3rd IGBT
Insulation board and the 2nd IGBT pressing plate.
The first IGBT pressing plate and the 2nd IGBT pressing plate are arranged in parallel, and it is tight that the top and bottom of the two pass through IGBT respectively
Gu screw connects；
The IGBT disc spring is crimped between the 3rd IGBT insulation board and the 2nd IGBT pressing plate.
The collector of the IGBT1 and collector the 2nd IGBT conductive plate of direction of IGBT2, the emitter of the IGBT1
Towards the first IGBT conductive plate, emitter the 3rd IGBT conductive plate of direction of the IGBT2；
The collector of the IGBT3 and collector the 5th IGBT conductive plate of direction of IGBT4, the emitter of the IGBT3
Towards the 4th IGBT conductive plate, emitter the 6th IGBT conductive plate of direction of the IGBT5.
The diode press mounting structure includes first diode pressing plate, the second diode pressing plate, first diode component,
Two diode assemblies, first diode conductive plate, the second diode conduction plate, third diode conduction plate, diode fasten spiral shell
Nail and diode disc spring；
The first diode pressing plate is arranged in parallel with the second diode pressing plate, and the two is connected by diode fastening screw
It connects；
Pass through first diode conductive plate, the second diode between the first diode component and the second diode assembly
Conductive plate is connected with third diode conduction plate, the two be arranged in parallel in first diode pressing plate and the second diode pressing plate it
Between, and it is vertical with first diode pressing plate and the second diode pressing plate；
The diode disc spring is crimped between third diode conduction plate and the second diode pressing plate.
The first diode component is exhausted including the 4th diode isolation plate, the 5th diode isolation plate, the 6th diode
Listrium, diode D1, diode D3, diode D5, diode D7, diode D9, the 5th diode conduction plate, the 6th diode
Conductive plate and the 7th diode conduction plate；
The 5th diode conduction plate is U-shaped conductive plate；
The 4th diode isolation plate, one end of first diode conductive plate, diode D1, the 5th diode conduction plate
One end, diode D5, the 6th diode conduction plate, the 5th diode isolation plate, the other end of the 5th diode conduction plate, two
Pole pipe D3, one end of the second diode conduction plate, diode D7, the 7th diode conduction plate, diode D9, third diode are led
One end of battery plate and the 6th diode isolation plate successively crimp.
The anode of the diode D1 is towards first diode conductive plate, and cathode is towards the 5th diode conduction plate；
Anode the second diode conduction plate of direction of the diode D3, cathode the 5th diode conduction plate of direction；
Anode the 5th diode conduction plate of direction of the diode D5, cathode the 6th diode conduction plate of direction；
Anode the 7th diode conduction plate of direction of the diode D7, cathode the second diode conduction plate of direction；
The anode of the diode D9 is towards the 7th diode conduction plate, and cathode is towards third diode conduction plate.
Second diode assembly includes that first diode insulation board, the second diode isolation plate, third diode are exhausted
Listrium, diode D2, diode D4, diode D6, diode D8, diode D10, the 4th diode conduction plate, the eight or two pole
Pipe conductive plate and the 9th diode conduction plate；
The first diode insulation board, the other end of first diode conductive plate, diode D2, the 4th diode conduction
Plate, diode D4, the other end of the second diode conduction plate, diode D6, the 8th diode conduction plate, the second diode isolation
Plate, the 9th diode conduction plate, diode D10, diode D8, the other end of third diode conduction plate and third diode are exhausted
Listrium successively crimps.
The anode of the diode D2 is towards the 4th diode conduction plate, and cathode is towards first diode conductive plate；
Anode the 4th diode conduction plate of direction of the diode D4, cathode the second diode conduction plate of direction；
Anode the second diode conduction plate of direction of the diode D6, cathode the 8th diode conduction plate of direction；
Anode the 8th diode conduction plate of direction of the diode D10, cathode the 9th diode conduction plate of direction；
The anode of the diode D8 is towards third diode conduction plate, and cathode is towards the 8th diode conduction plate.
The submodule further include the discharge resistance R1 in parallel with diode D5 in diode press-loading device and with two poles
The discharge resistance R3 of diode D10 parallel connection in pipe press-loading device.
The first IGBT conductive plate, the 2nd IGBT in one end connection IGBT press mounting structure of the first cascade busbar is conductive
Plate and the 3rd IGBT conductive plate, the other end connect the 4th diode conduction plate and the 5th diode in diode press mounting structure
Conductive plate；
The 4th IGBT conductive plate, the 5th IGBT in one end connection IGBT press mounting structure of second laminated bus bar is conductive
Plate and the 6th IGBT conductive plate, the other end connect the 7th diode conduction plate and the 8th diode in diode press mounting structure
Conductive plate；
Third laminated bus bar one end connects the 4th diode conduction plate and the six or two pole in diode press mounting structure
Pipe conductive plate, described 4th laminated bus bar one end connect the 9th diode conduction plate and the seven or two pole in diode press mounting structure
Pipe conductive plate.
Compared with the immediate prior art, technical solution provided by the invention is had the advantages that
Diode full-bridge twin-stage submodule provided by the present invention for breaker includes frame, IGBT press mounting structure, two
Pole pipe press mounting structure, equalizing resistance R2, equalizing resistance R4, the charging capacitor C1 and and equalizing resistance in parallel with equalizing resistance R2
The charging capacitor C2 of R4 parallel connection；IGBT press mounting structure and diode press mounting structure are each attached on frame, diode press mounting structure
One end connects IGBT press mounting structure by first cascade busbar and the second laminated bus bar, and the other end passes through third laminated bus bar and the
Four laminated bus bars are separately connected charging capacitor C1 and charging capacitor C2, and semiconductor components and devices quantity is relatively fewer, electrical connection letter
Single, wiring difficulty is small and at low cost；
Diode full-bridge twin-stage submodule provided by the invention passes through first cascade busbar, the second laminated bus bar, third layer
As electrical cable, compact overall structure is installed using entire submodule as unit for folded busbar and the 4th laminated bus bar, with
IGBT press mounting structure and diode press mounting structure are that unit is dismantled, and installation and removal are convenient, easy to maintain；
Diode full-bridge twin-stage submodule provided by the invention press pack semiconductor component more as far as possible, reduces submodule
Overall weight.
Detailed description of the invention
Fig. 1 is the diode full-bridge twin-stage submodule electric topology figure that breaker is used in the embodiment of the present invention；
Fig. 2 is the diode full-bridge twin-stage submodule perspective view that breaker is used in the embodiment of the present invention；
Fig. 3 is the diode full-bridge twin-stage submodule top view that breaker is used in the embodiment of the present invention；
Fig. 4 is IGBT press mounting structure schematic diagram in the embodiment of the present invention；
Fig. 5 is the diode press mounting structure schematic diagram of IGBT press mounting structure connection side in the embodiment of the present invention；
Fig. 6 is the diode press mounting structure schematic diagram of charging capacitor connection side in the embodiment of the present invention；
In figure, 1, frame, 2, IGBT press mounting structure, 3, diode press mounting structure, 4, equalizing resistance R2,5, equalizing resistance
R4,6, charging capacitor C1,7, charging capacitor C2,8, first cascade busbar, the 9, second laminated bus bar, 10, third laminated bus bar,
11, the 4th laminated bus bar, the 12, the first IGBT pressing plate, the 13, the first IGBT insulation board, the 14, the first IGBT conductive plate, 15, IGBT1,
16, the 2nd IGBT conductive plate, 17, IGBT2, the 18, the 3rd IGBT conductive plate, the 19, the 2nd IGBT insulation board, the 20, the 4th IGBT are led
Battery plate, 21, IGBT3, the 22, the 5th IGBT conductive plate, 23, IGBT4, the 24, the 6th IGBT conductive plate, the 25, the 3rd IGBT insulation board,
26, the 2nd IGBT pressing plate, 27, the IGBT fastening screw in IGBT press mounting structure, 28, the IGBT disc spring in IGBT press mounting structure,
29, first diode pressing plate, the 30, second diode pressing plate, 31, first diode insulation board, the 32, second diode isolation plate,
33, third diode isolation plate, the 34, the 4th diode isolation plate, the 35, the 5th diode isolation plate, the 36, the 6th diode isolation
Plate, 37, first diode conductive plate, 38, third diode conduction plate, the 39, the 4th diode conduction plate, the 40, the 5th diode
Conductive plate, the 41, the 7th diode conduction plate, the 42, the 8th diode conduction plate, 43, the diode in diode press mounting structure it is tight
Gu screw, 44, the diode disc spring in diode press mounting structure, the 45, the 9th diode conduction plate, 46, diode D1,47, two
Pole pipe D2,48, diode D3,49, diode D4,50, diode D5,51, diode D6,52, diode D7,53, diode
D8,54, diode D9,55, diode D10, the 56, second diode conduction plate, the 57, the 6th diode conduction plate.
Specific embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings.
The transfer branch of existing breaker is mostly IGBT full-bridge at present, and due to IGBT higher cost, this design sets increase
Standby cost becomes diode full-bridge if can halve IGBT quantity, and equipment cost will reduce nearly half.But diode is complete
More press pack semiconductor device is needed in bridge, mostly uses big component press-fit approach greatly at present, this mode is unfavorable for the installation of equipment
And maintenance only connects a busbar, installation, dimension if a submodule can be designed as each full-bridge subelement between the superior and the subordinate
Repairing only need to assemble and disassemble submodule, will improve installation, the maintainability of transfer branch.In the press mounting structure of current existing widgets, often
One semiconductor device a pair is pressed steel plate, and construction weight greatly increases.Then the embodiment of the invention provides one kind to be used for
The diode full-bridge twin-stage submodule of breaker, it is three-dimensional as shown in Fig. 2, top view is as shown in figure 3, this is used for the two of breaker
Pole pipe full-bridge twin-stage submodule includes frame 1, IGBT press mounting structure 2, diode press mounting structure 3, equalizing resistance R2, equalizing resistance
R4, the charging capacitor C1 in parallel with equalizing resistance R2 and the charging capacitor C2 in parallel with equalizing resistance R4；Specific connection relationship
It is as follows:
IGBT press mounting structure 2 and diode press mounting structure 3 are each attached on frame 1, and 3 one end of diode press mounting structure passes through
First cascade busbar 8 and the second laminated bus bar 9 connect IGBT press mounting structure 2, and the other end passes through third laminated bus bar 10 and the 4th
Laminated bus bar 11 is separately connected charging capacitor C1 and charging capacitor C2.
Such as Fig. 4, IGBT press mounting structure 2 include IGBT fastening screw 27, IGBT disc spring 28 and successively crimp first
IGBT pressing plate 12, the first IGBT insulation board 13, the first IGBT conductive plate 14, IGBT1, the 2nd IGBT conductive plate 16, IGBT2,
Three IGBT conductive plates 18, the 2nd IGBT insulation board 19, the 4th IGBT conductive plate 20, IGBT3, the 5th IGBT conductive plate 22,
IGBT4, the 6th IGBT conductive plate 24, the 3rd IGBT insulation board 25 and the 2nd IGBT pressing plate 26.
First IGBT pressing plate 12 and the 2nd IGBT pressing plate 26 are arranged in parallel, and it is tight that the top and bottom of the two pass through IGBT respectively
Gu screw 27 connects, there are six IGBT fastening screw 27 can be set, on the first IGBT pressing plate 12 and 26 the two of the 2nd IGBT pressing plate
End is connected by three IGBT fastening screw connections, the lower end of the two by its excess-three IGBT fastening screw.IGBT disc spring 28
It is crimped between the 3rd IGBT insulation board 25 and the 2nd IGBT pressing plate 26, IGBT disc spring 28 can be set 6 sets, every set IGBT disc spring
There are 4 IGBT disc springs, in every set in IGBT disc spring, 2 IGBT disc springs are one group in parallel, remaining 2 IGBT disc spring is another group
Also in parallel, it connects again later, a set of IGBT disc spring can be formed.
The collector of above-mentioned IGBT1 and collector the 2nd IGBT conductive plate 16 of direction of IGBT2, the emitter court of IGBT1
To the first IGBT conductive plate 14, emitter the 3rd IGBT conductive plate 18 of direction of IGBT2；
The collector of the collector of IGBT3 and IGBT4 are towards the 5th IGBT conductive plate 22, and the emitter of IGBT3 is towards the
Four IGBT conductive plates 20, emitter the 6th IGBT conductive plate 24 of direction of IGBT5.
Such as Fig. 5 and Fig. 6, diode press mounting structure 3 includes first diode pressing plate 29, the second diode pressing plate 30, first
Diode assembly, the second diode assembly, first diode conductive plate 37, the second diode conduction plate 56, third diode are led
Battery plate 38, diode fastening screw 43 and diode disc spring 44；Specific connection relationship is as follows:
First diode pressing plate 29 is arranged in parallel with the second diode pressing plate 30, and the two is connected by diode fastening screw 43
It connects；Diode fastening screw 43 can set 4 altogether, first diode pressing plate 29 and the respective IGBT of the second diode pressing plate 30
Press mounting structure connection side middle position is equipped with 2, and remaining 2 are arranged in first diode pressing plate 29 and the second diode pressing plate 30
The top and bottom of respective charging capacitor side.
Wherein pass through first diode conductive plate 37, the two or two pole between first diode component and the second diode assembly
Pipe conductive plate 56 and third diode conduction plate 38 connect, and the two is arranged in parallel in first diode pressing plate 29 and the second diode
Between pressing plate 30, and it is vertical with first diode pressing plate 29 and the second diode pressing plate 30, diode disc spring 44 is crimped on third
Between diode conduction plate 38 and the second diode pressing plate 30, diode disc spring 44 can be set 2 sets, in every set diode disc spring
There are 2 diode disc springs in parallel.
Wherein, first diode component includes the 4th diode isolation plate 34, the 5th diode isolation plate 35, the six or two pole
Pipe insulation plate 36, diode D1, diode D3, diode D5, diode D7, diode D9, the 5th diode conduction plate 40,
Six diode conduction plates 57 and the 7th diode conduction plate 41；
The 5th above-mentioned diode conduction plate is U-shaped conductive plate；
First diode component is a string of diodes, first diode pressing plate 29 and the second diode pressing plate below Fig. 6
Successively be pressed from right to left between 30 the 4th diode isolation plate 34, one end of first diode conductive plate 37, diode D1,
One end of 5th diode conduction plate 40, diode D5, the 6th diode conduction plate 57, the 5th diode isolation plate the 35, the 5th
The other end, diode D3, one end of the second diode conduction plate 56, the diode D7, the 7th diode of diode conduction plate 40
Conductive plate 41, diode D9, one end of third diode conduction plate 38 and the 6th diode isolation plate 36.
Above-mentioned diode D1, diode D3, diode D5, diode D7, diode D9 are respective towards specific as follows:
The anode of diode D1 is towards first diode conductive plate 37, and cathode is towards the 5th diode conduction plate 40；
Anode the second diode conduction plate 56 of direction of diode D3, cathode the 5th diode conduction plate 40 of direction；
Anode the 5th diode conduction plate 40 of direction of diode D5, cathode the 6th diode conduction plate 57 of direction；
Anode the 7th diode conduction plate 41 of direction of diode D7, cathode the second diode conduction plate 56 of direction；
The anode of diode D9 is towards the 7th diode conduction plate 41, and cathode is towards third diode conduction plate 38.
Second diode assembly includes that first diode insulation board 31, the second diode isolation plate 32, third diode are exhausted
Listrium 33, diode D2, diode D4, diode D6, diode D8, diode D10, the 4th diode conduction plate the 39, the 8th
Diode conduction plate 42 and the 9th diode conduction plate 45；
Second diode assembly is a string of diodes, first diode pressing plate 29 and the second diode pressing plate 30 above Fig. 6
Between be successively pressed from right to left first diode insulation board 31, the other end of first diode conductive plate 37, diode D2,
4th diode conduction plate 39, diode D4, the other end of the second diode conduction plate 56, diode D6, the 8th diode are led
Battery plate 42, the second diode isolation plate 32, the 9th diode conduction plate 45, diode D10, diode D8, third diode are led
The other end and third diode isolation plate 33 of battery plate 38.
Above-mentioned diode D2, diode D4, diode D6, diode D8, diode D10 are respective towards specific as follows:
The anode of diode D2 is towards the 4th diode conduction plate 39, and cathode is towards first diode conductive plate 37；
Anode the 4th diode conduction plate 39 of direction of diode D4, cathode the second diode conduction plate 56 of direction；
Anode the second diode conduction plate 56 of direction of diode D6, cathode the 8th diode conduction plate 42 of direction；
Anode the 8th diode conduction plate 42 of direction of diode D10, cathode the 9th diode conduction plate 45 of direction；
The anode of diode D8 is towards third diode conduction plate 38, and cathode is towards the 8th diode conduction plate 42.
Full-bridge twin-stage submodule in two pole provided in an embodiment of the present invention further includes discharge resistance R1 and discharge resistance R2, wherein
Discharge resistance R1 is in parallel with diode D5 in diode press-loading device, discharge resistance R3 and diode in diode press-loading device
D10 is in parallel.
One end of above-mentioned first cascade busbar 8 connects the first IGBT conductive plate 14, the 2nd IGBT conductive plate 16 and third
IGBT conductive plate 18, the other end connect the 4th diode conduction plate 39 and the 5th diode conduction plate 40；
One end of the second above-mentioned laminated bus bar 9 connects the 4th IGBT conductive plate 20, the 5th IGBT conductive plate 22 and the 6th
IGBT conductive plate 24, the other end connect the 7th diode conduction plate 41 and the 8th diode conduction plate 42；
Above-mentioned 10 one end of third laminated bus bar connects the 4th diode conduction plate 39 and the 6th diode conduction plate 57,
The other end connects charging capacitor C1；
4th laminated bus bar, 11 one end connects the 9th diode conduction plate 45 and the 7th diode conduction plate 41, the other end
Connect charging capacitor C2.
For convenience of description, each section of apparatus described above is divided into various modules with function or unit describes respectively.
Certainly, each module or the function of unit can be realized in same or multiple softwares or hardware when implementing the application.
It should be understood by those skilled in the art that, embodiments herein can provide as method, system or computer program
Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the application
Apply the form of example.Moreover, it wherein includes the computer of computer usable program code that the application, which can be used in one or more,
The computer program implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) produces
The form of product.
The application is referring to method, the process of equipment (system) and computer program product according to the embodiment of the present application
Figure and/or block diagram describe.It should be understood that every one stream in flowchart and/or the block diagram can be realized by computer program instructions
The combination of process and/or box in journey and/or box and flowchart and/or the block diagram.It can provide these computer programs
Instruct the processor of general purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices to produce
A raw machine, so that being generated by the instruction that computer or the processor of other programmable data processing devices execute for real
The device for the function of being specified in present one or more flows of the flowchart and/or one or more blocks of the block diagram.
These computer program instructions, which may also be stored in, is able to guide computer or other programmable data processing devices with spy
Determine in the computer-readable memory that mode works, so that it includes referring to that instruction stored in the computer readable memory, which generates,
Enable the manufacture of device, the command device realize in one box of one or more flows of the flowchart and/or block diagram or
The function of being specified in multiple boxes.
These computer program instructions also can be loaded onto a computer or other programmable data processing device, so that counting
Series of operation steps are executed on calculation machine or other programmable devices to generate computer implemented processing, thus in computer or
The instruction executed on other programmable devices is provided for realizing in one or more flows of the flowchart and/or block diagram one
The step of function of being specified in a box or multiple boxes.
Finally it should be noted that: the above embodiments are merely illustrative of the technical scheme of the present invention and are not intended to be limiting thereof, institute
The those of ordinary skill in category field can still modify to a specific embodiment of the invention referring to above-described embodiment or
Equivalent replacement, these are applying for this pending hair without departing from any modification of spirit and scope of the invention or equivalent replacement
Within bright claims.
Claims (11)
1. a kind of diode full-bridge twin-stage submodule for breaker, which is characterized in that including frame, IGBT press mounting structure,
Diode press mounting structure, equalizing resistance R2, equalizing resistance R4, the charging capacitor C1 in parallel with equalizing resistance R2 and with equal piezoelectricity
Hinder the charging capacitor C2 of R4 parallel connection；
The IGBT press mounting structure and diode press mounting structure are each attached on frame, and diode press mounting structure one end passes through
First cascade busbar and the second laminated bus bar connect IGBT press mounting structure, and the other end is female by third laminated bus bar and the 4th stacking
Row is separately connected charging capacitor C1 and charging capacitor C2.
2. the diode full-bridge twin-stage submodule according to claim 1 for breaker, which is characterized in that the IGBT
Press mounting structure includes IGBT fastening screw, IGBT disc spring and the first IGBT pressing plate successively crimped, the first IGBT insulation board,
One IGBT conductive plate, IGBT1, the 2nd IGBT conductive plate, IGBT2, the 3rd IGBT conductive plate, the 2nd IGBT insulation board, the 4th
IGBT conductive plate, IGBT3, the 5th IGBT conductive plate, IGBT4, the 6th IGBT conductive plate, the 3rd IGBT insulation board and the 2nd IGBT
Pressing plate.
3. the diode full-bridge twin-stage submodule according to claim 2 for breaker, which is characterized in that described first
IGBT pressing plate and the 2nd IGBT pressing plate are arranged in parallel, and the top and bottom of the two pass through IGBT fastening screw respectively and connect；
The IGBT disc spring is crimped between the 3rd IGBT insulation board and the 2nd IGBT pressing plate.
4. the diode full-bridge twin-stage submodule according to claim 2 for breaker, which is characterized in that described
The collector of IGBT1 and collector the 2nd IGBT conductive plate of direction of IGBT2, the first IGBT of emitter direction of the IGBT1
Conductive plate, emitter the 3rd IGBT conductive plate of direction of the IGBT2；
The collector of the IGBT3 and collector the 5th IGBT conductive plate of direction of IGBT4, the emitter direction of the IGBT3
4th IGBT conductive plate, emitter the 6th IGBT conductive plate of direction of the IGBT5.
5. the diode full-bridge twin-stage submodule according to claim 1 for breaker, which is characterized in that two pole
Pipe press mounting structure includes first diode pressing plate, the second diode pressing plate, first diode component, the second diode assembly,
One diode conduction plate, the second diode conduction plate, third diode conduction plate, diode fastening screw and diode disc spring；
The first diode pressing plate is arranged in parallel with the second diode pressing plate, and the two is connected by diode fastening screw；
Pass through first diode conductive plate, the second diode conduction between the first diode component and the second diode assembly
Plate is connected with third diode conduction plate, and the two is arranged in parallel between first diode pressing plate and the second diode pressing plate, and
It is vertical with first diode pressing plate and the second diode pressing plate；
The diode disc spring is crimped between third diode conduction plate and the second diode pressing plate.
6. the diode full-bridge twin-stage submodule according to claim 5 for breaker, which is characterized in that described first
Diode assembly includes the 4th diode isolation plate, the 5th diode isolation plate, the 6th diode isolation plate, diode D1, two
Pole pipe D3, diode D5, diode D7, diode D9, the 5th diode conduction plate, the 6th diode conduction plate and the seven or two pole
Pipe conductive plate；
The 5th diode conduction plate is U-shaped conductive plate；
The 4th diode isolation plate, one end of first diode conductive plate, diode D1, the 5th diode conduction plate one
End, diode D5, the 6th diode conduction plate, the 5th diode isolation plate, the 5th diode conduction plate the other end, diode
D3, one end of the second diode conduction plate, diode D7, the 7th diode conduction plate, diode D9, third diode conduction plate
One end and the 6th diode isolation plate successively crimp.
7. the diode full-bridge twin-stage submodule according to claim 6 for breaker, which is characterized in that two pole
The anode of pipe D1 is towards first diode conductive plate, and cathode is towards the 5th diode conduction plate；
Anode the second diode conduction plate of direction of the diode D3, cathode the 5th diode conduction plate of direction；
Anode the 5th diode conduction plate of direction of the diode D5, cathode the 6th diode conduction plate of direction；
Anode the 7th diode conduction plate of direction of the diode D7, cathode the second diode conduction plate of direction；
The anode of the diode D9 is towards the 7th diode conduction plate, and cathode is towards third diode conduction plate.
8. the diode full-bridge twin-stage submodule according to claim 6 for breaker, which is characterized in that described second
Diode assembly includes first diode insulation board, the second diode isolation plate, third diode isolation plate, diode D2, two
Pole pipe D4, diode D6, diode D8, diode D10, the 4th diode conduction plate, the 8th diode conduction plate and the 9th 2
Pole pipe conductive plate；
The first diode insulation board, the other end of first diode conductive plate, diode D2, the 4th diode conduction plate,
Diode D4, the other end of the second diode conduction plate, diode D6, the 8th diode conduction plate, the second diode isolation plate,
9th diode conduction plate, diode D10, diode D8, third diode conduction plate the other end and third diode isolation
Plate successively crimps.
9. the diode full-bridge twin-stage submodule according to claim 8 for breaker, which is characterized in that two pole
The anode of pipe D2 is towards the 4th diode conduction plate, and cathode is towards first diode conductive plate；
Anode the 4th diode conduction plate of direction of the diode D4, cathode the second diode conduction plate of direction；
Anode the second diode conduction plate of direction of the diode D6, cathode the 8th diode conduction plate of direction；
Anode the 8th diode conduction plate of direction of the diode D10, cathode the 9th diode conduction plate of direction；
The anode of the diode D8 is towards third diode conduction plate, and cathode is towards the 8th diode conduction plate.
10. the diode full-bridge twin-stage submodule according to claim 1 for breaker, which is characterized in that the son
Module further includes the discharge resistance R1 in parallel with diode D5 in diode press-loading device and in diode press-loading device two
The discharge resistance R3 of pole pipe D10 parallel connection.
11. the diode full-bridge twin-stage submodule according to claim 1 for breaker, which is characterized in that described
The first IGBT conductive plate, the 2nd IGBT conductive plate and the 3rd IGBT in one end connection IGBT press mounting structure of one laminated bus bar are led
Battery plate, the other end connect the 4th diode conduction plate and the 5th diode conduction plate in diode press mounting structure；
Second laminated bus bar one end connection IGBT press mounting structure in the 4th IGBT conductive plate, the 5th IGBT conductive plate and
6th IGBT conductive plate, the other end connect the 7th diode conduction plate and the 8th diode conduction in diode press mounting structure
Plate；
The 4th diode conduction plate and the 6th diode in third laminated bus bar one end connection diode press mounting structure are led
Battery plate, the 9th diode conduction plate and the 7th diode in described 4th laminated bus bar one end connection diode press mounting structure are led
Battery plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821170118.9U CN208597026U (en) | 2018-07-24 | 2018-07-24 | A kind of diode full-bridge twin-stage submodule for breaker |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821170118.9U CN208597026U (en) | 2018-07-24 | 2018-07-24 | A kind of diode full-bridge twin-stage submodule for breaker |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208597026U true CN208597026U (en) | 2019-03-12 |
Family
ID=65603490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821170118.9U Active CN208597026U (en) | 2018-07-24 | 2018-07-24 | A kind of diode full-bridge twin-stage submodule for breaker |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208597026U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020020140A1 (en) * | 2018-07-24 | 2020-01-30 | 全球能源互联网研究院有限公司 | Diode full-bridge dual-stage sub-module |
| CN111082403A (en) * | 2020-01-09 | 2020-04-28 | 华北电力大学 | Integrated laminated busbar structure suitable for diode bridge |
-
2018
- 2018-07-24 CN CN201821170118.9U patent/CN208597026U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020020140A1 (en) * | 2018-07-24 | 2020-01-30 | 全球能源互联网研究院有限公司 | Diode full-bridge dual-stage sub-module |
| CN111082403A (en) * | 2020-01-09 | 2020-04-28 | 华北电力大学 | Integrated laminated busbar structure suitable for diode bridge |
| CN111082403B (en) * | 2020-01-09 | 2021-01-08 | 华北电力大学 | Integrated laminated busbar structure suitable for diode bridge |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104242605B (en) | Current-sharing busbar | |
| CN105556787A (en) | Modular multipoint power converter for high voltages | |
| CN208597026U (en) | A kind of diode full-bridge twin-stage submodule for breaker | |
| CN205646843U (en) | A grid -connected inverter and renewable energy power generation system for renewable energy electricity generation | |
| CN109286182A (en) | A kind of DC voltage clamper removed for flexible direct current electric network fault | |
| CN103973094B (en) | A kind of quick pre-charging electricity circuit of modular multi-level converter | |
| CN102122897A (en) | Solar photovoltaic three-phase micro inverter and solar photovoltaic power generation system | |
| CN108933536A (en) | A kind of diode full-bridge twin-stage submodule for breaker | |
| CN102904420A (en) | Multi-port current transformer | |
| CN104184311B (en) | Supply the power supply circuit of the gate drive power of power conversion device | |
| CN103187725A (en) | Direct current power transmission system | |
| CN204578106U (en) | A kind of offshore wind farm modular multi-level flexible direct-current transmission system | |
| Inamori et al. | 380-VDC power distribution system for 4-MW-scale cloud facility | |
| CN103312210A (en) | Three-phase four-wire type three-level photovoltaic grid-connected inverter | |
| CN102931241B (en) | A kind of crystalline silicon component | |
| CN202550291U (en) | Contactor module and photovoltaic grid connection inversion device | |
| CN202948954U (en) | Crystalline silicon assembly | |
| CN202231445U (en) | Solar AC photovoltaic assembly | |
| CN203984337U (en) | A kind of low profile photovoltaic header box | |
| CN103532395A (en) | Power supply circuit of power module of chain circuit SVG (static var generator) | |
| CN210536522U (en) | Modular SOP system | |
| CN203150933U (en) | Collecting cabinet and photovoltaic power generation system | |
| CN106664029B (en) | The assemble method of power converter and power converter | |
| CN102857080A (en) | Explosion-proof frequency converter core and explosion-proof frequency converter | |
| CN101867313B (en) | Cascade current converter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |