CN209046515U - A kind of busbar power modules based on 62mmIGBT - Google Patents
A kind of busbar power modules based on 62mmIGBT Download PDFInfo
- Publication number
- CN209046515U CN209046515U CN201822251099.9U CN201822251099U CN209046515U CN 209046515 U CN209046515 U CN 209046515U CN 201822251099 U CN201822251099 U CN 201822251099U CN 209046515 U CN209046515 U CN 209046515U
- Authority
- CN
- China
- Prior art keywords
- 62mmigbt
- row
- power modules
- direct current
- modules based
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 24
- 238000010521 absorption reaction Methods 0.000 claims abstract description 13
- 238000003475 lamination Methods 0.000 claims description 12
- 239000004593 Epoxy Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Landscapes
- Inverter Devices (AREA)
Abstract
The utility model discloses a kind of structures simple, strong antijamming capability and the stable busbar power modules based on 62mmIGBT of performance.The utility model includes 62mmIGBT module (1), high voltage direct current Support Capacitor (2) and peak voltage Absorption Capacitance (3), it further includes DC master row (4), the IGBT module (1) is arranged on a side of the DC master row (4), the high voltage direct current Support Capacitor (2) and the peak voltage Absorption Capacitance (3) are arranged on another side of the DC master row (4), are provided with radiator (5) on the downside of the IGBT module (1).The utility model can be applied to IGBT application field.
Description
Technical field
The utility model relates to IGBT application field more particularly to a kind of busbar power modules based on 62mmIGBT.
Background technique
It is especially past during doing power battery electric performance test since the IGBT of 62mm has splendid stability
Toward the application that will appear high voltage-small current and low-voltage, high-current, in order to guarantee that equipment performance often directly selects single current transformer function
Rate device completes power conversion.But the stray inductance of current transformer can make to generate higher voltage point between the collection of IGBT, emitter-base bandgap grading
Peak even results in insulated gate bipolar transistor IGBT damage to cause biggish electromagnetic interference.Therefore it uses in systems
Peak voltage Absorption Capacitance and the standard configuration that configuration high voltage direct current Support Capacitor works at (IGBT) nearby.However, using spike
The auxiliary capacitors such as voltage Absorption Capacitance and high voltage direct current Support Capacitor will increase the stray inductance between IGBT and auxiliary circuit, nothing
Method reduces electromagnetic interference, and it is even more impossible to guarantee the stability of current transformer core power transformation device.As can reducing to the maximum extent
Line connection between IGBT and auxiliary capacitor, then can reduce the stray inductance between IGBT and auxiliary circuit well.
Utility model content
Technical problem to be solved in the utility model is that overcome the deficiencies of the prior art and provide a kind of structure simple, anti-
Interference performance is strong and the stable busbar power modules based on 62mmIGBT of performance.
The technical scheme adopted by the utility model is the utility model includes 62mmIGBT module, high voltage direct current support
Capacitor and peak voltage Absorption Capacitance, it further includes DC master row, and one of the DC master row is arranged in the IGBT module
On side, the high voltage direct current Support Capacitor and the peak voltage Absorption Capacitance are arranged at another of the DC master row
On side, radiator is provided on the downside of the IGBT module.
Above scheme makes IGBT module, high voltage direct current Support Capacitor and peak voltage as it can be seen that by the setting of DC master row
Absorption Capacitance is directly connected by DC master row, and the line connection reduced between IGBT and auxiliary capacitor is considerably reduced, from
And the stray inductance between IGBT and auxiliary circuit and peak voltage are efficiently reduced, improve the anti-interference ability of mould group and steady
Determine reliability, while also avoiding due to multi-thread connection bring potential faults;In addition, being compared with common wiring, using straight
Stream this connection type of busbar reduces stray inductance, the response speed of the small electric current of stray electrical sensibility reciprocal faster, and DC master row
The common wiring of resistance ratio resistance it is much smaller, the corresponding speed of electric current is further improved, so current response rate
Fastly, and then the control precision of electric current is improved, promotes the Control platform of entire mould group;In addition, the introducing of DC master row can be big
The earth simplifies installation and debugging process, and is convenient for device maintenance, relatively low to reduce costs.
Further, the DC master row is formed by stacking by independent two laminations, is provided on two laminations
IGBT connecting hole, several mounting holes and row wire terminal, after being stacked in overlapping described in two, the row wire terminal is arranged in a staggered manner, and two
Insulating layer is provided between a lamination.
Above scheme, so that structure is more compact, also saves the interior of module as it can be seen that by the overlapping settings of two laminations
Portion space provides guarantee to increase auxiliary capacitor.
Still further, being fixedly connected between the DC master row and the radiator by the way that epoxy plate is arranged.Thus may be used
See, by the setting of epoxy plate, both ensure that insulation performance, also enhance the stability of mould group, while guaranteeing the use of mould group
Service life.
Again further, the end of the radiator is provided with radiator fan.It can be seen that setting by radiator fan
It sets and enhances heat dissipation effect.
In addition, the quantity of the high voltage direct current Support Capacitor is set as four.It can be seen that the high voltage direct current branch of multi-quantity
Support capacitor improves proof voltage, resistance to galvanic, temperature performance, charge/discharge speed and the service life of mould group, also improves
The safety anti-explosive stability of entire mould group.
Detailed description of the invention
Fig. 1 is the easy structure schematic diagram of the utility model;
Fig. 2 is the easy structure schematic diagram under the DC master row closed state;
Fig. 3 is the overlooking structure diagram under the DC master row separated position;
Fig. 4 is the circuit topology figure of the utility model.
Specific embodiment
As shown in Figures 1 to 4, the utility model includes 62mmIGBT module 1, high voltage direct current Support Capacitor 2 and spike electricity
Absorption Capacitance 3 is pressed, after two IGBT series connection in IGBT module simultaneously with high voltage direct current Support Capacitor and peak voltage Absorption Capacitance
Connection.It further includes DC master row 4, and the IGBT module 1 is arranged on a side of the DC master row 4, the high straightening
Stream Support Capacitor 2 and the peak voltage Absorption Capacitance 3 are arranged on another side of the DC master row 4, the height
The quantity of straightening stream Support Capacitor 2 is set as four.The downside of the IGBT module 1 is provided with radiator 5.The DC master row
4 are formed by stacking by independent two laminations 6, be provided on two laminations 6 IGBT connecting hole 61, several mounting holes 62 and
Row wire terminal 63, after overlapping, the row wire terminal 63 is arranged in a staggered manner two laminations 6, is arranged between two laminations
There is insulating layer.It is fixedly connected between the DC master row 4 and the radiator 5 by the way that epoxy plate 7 is arranged.The radiator 5
End is provided with radiator fan 8.
Compared with prior art, the utility model changes IGBT core devices and DC support capacitor and spike electricity
The connection relationship between the auxiliary capacitors such as Absorption Capacitance is pressed, is attached using DC master row, greatly reduces IGBT core
Line connection between device and DC support capacitor and auxiliary capacitor, to efficiently reduce miscellaneous between IGBT and auxiliary circuit
Inductance and peak voltage are dissipated, improves the anti-interference ability and reliability of mould group, while also avoiding due to multi-thread connection
Bring potential faults;Furthermore the current response rate and Lifting Modules group of mould group be can be improved by the setting of DC master row
Current control accuracy promotes the Control platform of entire mould group;In addition, the introducing of DC master row can be greatly simplified installation and debugging
Process, and it is convenient for device maintenance, it is relatively low to reduce costs.
Claims (5)
1. a kind of busbar power modules based on 62mmIGBT, including 62mm IGBT module (1), high voltage direct current Support Capacitor (2)
With peak voltage Absorption Capacitance (3), it is characterised in that: it further includes DC master row (4), and the IGBT module (1) is arranged in institute
It states on a side of DC master row (4), the high voltage direct current Support Capacitor (2) and the peak voltage Absorption Capacitance (3) are equal
It is arranged on another side of the DC master row (4), is provided with radiator (5) on the downside of the IGBT module (1).
2. a kind of busbar power modules based on 62mmIGBT according to claim 1, it is characterised in that: the direct current is female
Row (4) is formed by stacking by independent two laminations (6), and IGBT connecting hole (61), several is provided on two laminations (6)
Mounting hole (62) and row wire terminal (63), after overlapping, the row wire terminal (63) is arranged in a staggered manner two laminations (6), and two
Insulating layer is provided between a lamination (6).
3. a kind of busbar power modules based on 62mmIGBT according to claim 2, it is characterised in that: the direct current is female
It is fixedly connected between row (4) and the radiator (5) by the way that epoxy plate (7) are arranged.
4. a kind of busbar power modules based on 62mmIGBT according to claim 1, it is characterised in that: the radiator
(5) end is provided with radiator fan (8).
5. a kind of busbar power modules based on 62mmIGBT according to claim 1, it is characterised in that: the high straightening
The quantity of stream Support Capacitor (2) is set as four.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822251099.9U CN209046515U (en) | 2018-12-29 | 2018-12-29 | A kind of busbar power modules based on 62mmIGBT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822251099.9U CN209046515U (en) | 2018-12-29 | 2018-12-29 | A kind of busbar power modules based on 62mmIGBT |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209046515U true CN209046515U (en) | 2019-06-28 |
Family
ID=67045064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822251099.9U Active CN209046515U (en) | 2018-12-29 | 2018-12-29 | A kind of busbar power modules based on 62mmIGBT |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209046515U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109672323A (en) * | 2018-12-29 | 2019-04-23 | 珠海九源电力电子科技有限公司 | A kind of busbar power modules based on 62mmIGBT |
-
2018
- 2018-12-29 CN CN201822251099.9U patent/CN209046515U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109672323A (en) * | 2018-12-29 | 2019-04-23 | 珠海九源电力电子科技有限公司 | A kind of busbar power modules based on 62mmIGBT |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9093923B2 (en) | Three-level converter having phase bridge arm | |
| CN203504422U (en) | Laminated busbar for T-type three-level current transformer | |
| CN110780185B (en) | A parallel current sharing test platform and method and a metal electrode assembly | |
| Emhemed et al. | The effectiveness of using IEC61660 for characterising short-circuit currents of future low voltage DC distribution networks | |
| CN106887955A (en) | High-power DC/DC modules | |
| CN103872930A (en) | Capacitive step-down electricity taking method suitable for transmission line tower | |
| CN101420171B (en) | High-power switching power supply laminated busbar method | |
| CN202340177U (en) | Power module design for wind power converter | |
| CN110365086A (en) | A kind of highly integrated charger power cell | |
| CN102882393B (en) | Power supply device for converter valve of static VAR generator | |
| CN201126927Y (en) | Laminated power busbars of levitation chopper for maglev train | |
| CN214797413U (en) | Multi-group parallel high-current IGBT power module device | |
| CN203660898U (en) | Low-cost layout structure with low stray inductance in electronic equipment | |
| CN111224535A (en) | A capacitor series busbar for dynamic characteristic test of crimp power module | |
| CN109672323A (en) | A kind of busbar power modules based on 62mmIGBT | |
| CN102025360A (en) | High-voltage thyristor valve string triggered energy gaining circuit device | |
| CN212726544U (en) | High-power quick charging device of electric automobile without high-frequency isolation transformer | |
| CN101510696B (en) | High-power waveform generator | |
| CN205490096U (en) | Big power inverter power unit | |
| CN205231743U (en) | Power electronic transformer substation | |
| CN209329220U (en) | A kind of stack bus bar suitable for power semiconductor test | |
| CN204030989U (en) | A kind of novel rectifying device cabinet | |
| CN209516929U (en) | A kind of raising frequency converter immunity module device | |
| CN207657610U (en) | A kind of pair is dielectrically separated from power supply system | |
| CN201877824U (en) | Direct current bus structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |