CN111223849A - Multi-channel integrated refrigeration single photon avalanche photodiode device - Google Patents
Multi-channel integrated refrigeration single photon avalanche photodiode device Download PDFInfo
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- CN111223849A CN111223849A CN202010031308.8A CN202010031308A CN111223849A CN 111223849 A CN111223849 A CN 111223849A CN 202010031308 A CN202010031308 A CN 202010031308A CN 111223849 A CN111223849 A CN 111223849A
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- avalanche photodiode
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- single photon
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- photon avalanche
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- 238000005057 refrigeration Methods 0.000 title claims abstract description 16
- 239000013307 optical fiber Substances 0.000 claims abstract description 20
- 230000000712 assembly Effects 0.000 claims abstract description 16
- 238000000429 assembly Methods 0.000 claims abstract description 16
- 239000000919 ceramic Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000003780 insertion Methods 0.000 claims abstract description 11
- 230000037431 insertion Effects 0.000 claims abstract description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 239000003507 refrigerant Substances 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 12
- 238000000034 method Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a multi-channel integrated refrigeration single photon avalanche photodiode device which comprises a shell, wherein a cavity is arranged in the shell, a thermoelectric refrigerator and a ceramic substrate are arranged in the cavity, a temperature-sensitive resistor and at least two avalanche photodiode chips are fixedly connected to the ceramic substrate, at least two groups of optical fiber assemblies are inserted into the cavity wall on one side of the cavity, and the ends of the insertion ends of the optical fiber assemblies are respectively coupled with the photosensitive surfaces of the corresponding avalanche photodiode chips in a facing manner. According to the invention, a plurality of avalanche photodiode chips are integrated in a shell, each chip can independently detect one path of single photon signal, and the detection of multiple paths of signals can be realized by using one single photon avalanche photodiode device, so that the use is convenient; and a plurality of avalanche photodiode chips share one thermoelectric refrigerator, so that the size, the cost and the power consumption of the single photon avalanche photodiode device can be obviously reduced.
Description
Technical Field
The invention relates to the field of single photon detection, in particular to a multi-channel integrated refrigeration single photon avalanche photodiode device.
Background
With the development of space detection, biomedicine and quantum technology, the requirements on detection systems of weak optical signals, particularly single photon signals, are higher and higher, and convenience and easiness in use are required. The single photon avalanche photodiode is a core component of a single photon detection system, and can be widely applied to the fields of quantum communication, laser radar, time domain reflectometer, near infrared precise optical measurement and the like. The principle is that by utilizing the internal photoelectric effect, when incident photons are absorbed by an absorption layer material, electron-hole pairs are generated, electrons or holes are transported to a multiplication region under the action of an electric field, and a collision ionization process occurs in the multiplication region, so that macroscopic avalanche current capable of being observed is formed, and the detection of single photons is realized. In this process, the thermally generated carriers of the absorber layer material can generate dark current, reducing the sensitivity of the device. Therefore, there is a need for cooling single photon avalanche photodiode devices.
Currently, a single photon avalanche photodiode device generally adopts a to (transistor outline) package and a butterfly integrated refrigeration package. The single photon detection system adopting the TO encapsulation device needs an external refrigerator TO refrigerate the whole system, has low refrigeration efficiency and larger power consumption of the detection system, and the single photon avalanche photodiode devices of the existing butterfly integrated refrigeration encapsulation are single-channel devices, can only detect one-way single photon signals and need TO be paired with independent power circuits. In practical application, n (n is more than or equal to 2) single photon signals are often required to be detected, the volume and the power consumption of a detection unit are correspondingly increased by n times compared with a single-channel detection system, the design difficulty of the system is increased, and the use is inconvenient.
Disclosure of Invention
The invention aims to solve the technical problem of providing a multichannel integrated refrigeration single photon avalanche photodiode device which can detect multiple paths of single photon signals simultaneously and has low power consumption.
The technical scheme of the invention is as follows:
a multi-channel integrated refrigeration single photon avalanche photodiode device comprises a shell, wherein a cavity is arranged in the shell, a thermoelectric refrigerator is arranged at the bottom of the cavity, a hot end face of the thermoelectric refrigerator is fixedly connected with the cavity wall at the bottom of the cavity, a ceramic substrate is fixedly arranged on a cold end face of the thermoelectric refrigerator, a temperature-sensitive resistor and at least two avalanche photodiode chips are fixedly connected onto the ceramic substrate, a plurality of pins penetrate through the cavity walls on two sides of the cavity, and the pins are respectively and electrically connected with the avalanche photodiode chips, the temperature-sensitive resistor and the thermoelectric refrigerator through internal leads; at least two groups of optical fiber assemblies are inserted into the cavity wall on one side of the upper step section of the cavity, the optical fiber assemblies correspond to the avalanche photodiode chips one by one, the ends of the insertion ends are respectively coupled with the photosensitive surfaces of the corresponding avalanche photodiode chips, and the non-insertion ends of the optical fiber assemblies are used for connecting optical fibers.
Furthermore, the middle part of the shell is concave inwards to form an I-shaped structure, the shape of the cavity corresponds to that of the shell, so that the cavity is stepped, the upper part is larger than the lower part, the insertion end of each group of optical fiber assemblies is welded and fixed on the step surface of the cavity, and the lower step part of the cavity is matched with the thermoelectric refrigerator.
Further, the absorption layer of the avalanche photodiode chip is made of one of Si, InGaAs (P), Ge and inaias.
Furthermore, the shell is hermetically packaged, and nitrogen or argon is filled in the shell.
Furthermore, each avalanche photodiode chip is connected with a pin by using an independent internal lead, so that mutual influence during signal output is avoided.
Furthermore, the avalanche photodiode chip is fixed on the mounting rack through a flip-chip bonding process, and then the mounting rack is fixed on the ceramic substrate through bonding or welding.
Furthermore, mounting holes are formed in the cavity walls on the two sides of the cavity and correspond to the positions where the pins penetrate, and after the pins penetrate through the mounting holes, the pins and the hole walls of the mounting holes in the corresponding positions are fixed through sintering of the glass insulators at high temperature, so that an air-tight structure is formed.
Has the advantages that: according to the invention, a plurality of avalanche photodiode chips are integrated in a shell, each chip can independently detect one path of single photon signal, and the detection of multiple paths of signals can be realized by using one single photon avalanche photodiode device, so that the use is convenient; and a plurality of avalanche photodiode chips share one thermoelectric refrigerator, so that the size, the cost and the power consumption of the single photon avalanche photodiode device can be obviously reduced.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic structural view of a housing and pins;
fig. 3 is a partial cross-sectional view of fig. 2.
Detailed Description
The invention will be further explained with reference to the drawings.
In the description of the present invention, unless otherwise specified and limited, it is to be noted that the term "connected" is to be interpreted broadly, and may be, for example, a mechanical connection or an electrical connection, or a communication between two elements, or may be a direct connection or an indirect connection through an intermediate medium, and a specific meaning of the term may be understood by those skilled in the art according to specific situations.
As shown in fig. 1, 2 and 3, the multichannel integrated refrigeration single photon avalanche photodiode device of the present invention includes a casing 7, the casing 7 is hermetically sealed and filled with nitrogen or argon, the middle of the casing 7 is recessed inwards to form an i-shaped structure, a stepped cavity 9 with a large top and a small bottom is arranged inside the casing 7, a thermoelectric refrigerator 6 is arranged at the bottom of the cavity 9, and the size of the lower step of the cavity 9 is adapted to the size of the thermoelectric refrigerator 6; the hot end face of the thermoelectric refrigerator 6 is fixedly connected with the cavity wall at the bottom of the cavity 9, the cold end face is fixedly provided with a ceramic substrate 4, the ceramic substrate 4 is fixedly connected with a temperature-sensitive resistor 5 and at least two avalanche photodiode chips 2, preferably two avalanche photodiode chips 2, and the absorption layer material of the avalanche photodiode chips 2 is one of Si, InGaAs (P), Ge and InAlAs; the avalanche photodiode chip 2 is fixed on the mounting rack through a flip-chip bonding process, and then the mounting rack is fixed on the ceramic substrate 4 through bonding or welding.
A plurality of pins 8 are arranged on the cavity walls on two sides of the upper step part of the cavity 9 in a penetrating manner, specifically, mounting holes are arranged on the cavity walls on two sides of the cavity 9 corresponding to the positions where the pins 8 penetrate, and after the pins 8 penetrate through the mounting holes, the pins 8 are fixed with the hole walls of the mounting holes at the corresponding positions through sintering of a glass insulator 10 at high temperature, so that an airtight structure is formed; the plurality of pins 8 are respectively and electrically connected with the avalanche photodiode chip 2, the temperature sensitive resistor 5 and the thermoelectric refrigerator 6 through the internal lead 3, wherein each avalanche photodiode chip 2 is connected with the pin 8 by using the independent internal lead 3.
At least two groups of optical fiber assemblies 1, preferably two groups of optical fiber assemblies 1, are inserted into the cavity wall on one side of the upper step section of the cavity 9, the optical fiber assemblies 1 correspond to the avalanche photodiode chips 2 one by one, the insertion ends of each group of optical fiber assemblies 1 are welded and fixed on the step surface of the cavity 9, the ends of the insertion ends are respectively coupled with the photosensitive surfaces of the corresponding avalanche photodiode chips 2, and the non-insertion ends of the optical fiber assemblies 1 are used for connecting optical fibers.
The working principle of the embodiment is as follows:
as shown in fig. 1 to 3, when in use, the non-insertion ends of the two optical fiber assemblies 1 are respectively connected to optical fibers, and bias voltage and gate control signals are loaded on the two avalanche photodiode chips 2 through the pins 8, so that the two-path single photon signals can be simultaneously detected. The heat generated by the avalanche photodiode chip 2 is rapidly transferred to the thermoelectric refrigerator 6 through the ceramic substrate 4, so that the avalanche photodiode chip 2 is refrigerated, the temperature inside the shell 7 can be detected through the temperature sensitive resistor 5, the thermoelectric refrigerator 6 is adjusted, and the temperature inside the shell 7 is kept within the temperature range for the normal work of the avalanche photodiode chip 2. Because the two avalanche photodiode chips share the ceramic substrate and the thermoelectric refrigerator, the size, the cost and the power consumption of the single photon avalanche photodiode device can be obviously reduced compared with two independent detection devices.
In addition, the middle part of the shell 7 is concave inwards to form an I-shaped structure, and the size of the lower step part of the cavity 9 is matched with that of the thermoelectric refrigerator 6, so that redundant space inside the shell 7 is effectively removed, and the refrigerating efficiency of the thermoelectric refrigerator 6 is improved.
The undescribed parts of the present invention are consistent with the prior art, and are not described herein.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent structures made by using the contents of the present specification and the drawings can be directly or indirectly applied to other related technical fields, and are within the scope of the present invention.
Claims (7)
1. A multi-channel integrated refrigeration single photon avalanche photodiode device comprising a housing (7), characterized in that: a cavity (9) is formed in the shell (7), a thermoelectric refrigerator (6) is arranged at the bottom of the cavity (9), a hot end face of the thermoelectric refrigerator (6) is fixedly connected with the cavity wall at the bottom of the cavity (9), a ceramic substrate (4) is fixedly arranged on a cold end face of the thermoelectric refrigerator, a temperature-sensitive resistor (5) and at least two avalanche photodiode chips (2) are fixedly connected onto the ceramic substrate (4), a plurality of pins (8) penetrate through the cavity walls on two sides of the cavity (9), and the plurality of pins (8) are electrically connected with the avalanche photodiode chips (2), the temperature-sensitive resistor (5) and the thermoelectric refrigerator (6) through internal leads (3) respectively; at least two groups of optical fiber assemblies (1) are inserted into the cavity wall on one side of the upper step section of the cavity (9), the optical fiber assemblies (1) correspond to the avalanche photodiode chips (2) one by one, the ends of the insertion ends are respectively coupled with the photosensitive surfaces of the corresponding avalanche photodiode chips (2), and the non-insertion ends of the optical fiber assemblies (1) are used for connecting optical fibers.
2. The multi-channel integrated refrigeration single photon avalanche photodiode device according to claim 1, wherein the middle of the housing (7) is concave inwards to form an I-shaped structure, the shape of the cavity (9) corresponds to the housing (7) so as to form a step shape with a large top and a small bottom, the insertion end of each group of optical fiber assemblies (1) is welded and fixed on the step surface of the cavity (9), and the lower step part of the cavity (9) is matched with the thermoelectric refrigerator (6).
3. The multi-channel integrated refrigeration single photon avalanche photodiode device according to claim 1, wherein: the absorption layer material of the avalanche photodiode chip (2) is one of Si, InGaAs (P), Ge and InAlAs.
4. The multi-channel integrated refrigeration single photon avalanche photodiode device according to claim 1, wherein the housing (7) is hermetically sealed and filled with nitrogen or argon.
5. The multi-channel integrated refrigerant single photon avalanche photodiode device according to claim 1, wherein each avalanche photodiode chip (2) is connected to a pin (8) using a separate internal lead (3).
6. The multi-channel integrated refrigeration single photon avalanche photodiode device according to claim 1, wherein the avalanche photodiode chip (2) is fixed on the mounting frame by flip-chip bonding, and then the mounting frame is fixed on the ceramic substrate (4) by means of bonding or welding.
7. The multi-channel integrated refrigeration single photon avalanche photodiode device according to claim 1, wherein mounting holes are formed in the cavity walls on the two sides of the cavity (9) at positions corresponding to the positions where the pins (8) penetrate, and after the pins (8) penetrate through the mounting holes, the pins (8) are fixed with the hole walls of the mounting holes at the corresponding positions through sintering of glass insulators (10) at high temperature, so that an airtight structure is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010031308.8A CN111223849A (en) | 2020-01-13 | 2020-01-13 | Multi-channel integrated refrigeration single photon avalanche photodiode device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010031308.8A CN111223849A (en) | 2020-01-13 | 2020-01-13 | Multi-channel integrated refrigeration single photon avalanche photodiode device |
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| CN111223849A true CN111223849A (en) | 2020-06-02 |
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| CN202010031308.8A Pending CN111223849A (en) | 2020-01-13 | 2020-01-13 | Multi-channel integrated refrigeration single photon avalanche photodiode device |
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Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1181634A (en) * | 1996-10-18 | 1998-05-13 | 阿尔卡塔尔·阿尔斯托姆公司 | Optoelectronic component |
| JP2001033667A (en) * | 1999-07-21 | 2001-02-09 | Nec Eng Ltd | Surface mounting type photo-receiving module |
| US20010025650A1 (en) * | 2000-03-31 | 2001-10-04 | Kazunori Ando | Photo-electronic device and method of producing the same |
| US20020150373A1 (en) * | 2001-03-27 | 2002-10-17 | Masanori Goto | Optical waveguide module-mounted package |
| US20030123819A1 (en) * | 2001-12-25 | 2003-07-03 | Hiromi Nakanishi | Optical communications module |
| CN1700450A (en) * | 2005-06-09 | 2005-11-23 | 华南师范大学 | Secondary packaging device of avalanche photodiode for infrared photodetection |
| JP2008294262A (en) * | 2007-05-25 | 2008-12-04 | Nippon Telegr & Teleph Corp <Ntt> | Optical element module and its manufacturing method |
| US20120320938A1 (en) * | 2010-03-10 | 2012-12-20 | Panasonic Corporation | Semiconductor laser device |
| CN103336336A (en) * | 2013-06-28 | 2013-10-02 | 安徽量子通信技术有限公司 | Seal refrigerating box convenient to dismantle and mount and optical fiber via hole hermetically sealed connector |
| CN106405753A (en) * | 2015-08-03 | 2017-02-15 | 住友电气工业株式会社 | Method of producing optical module and optical module |
| CN108054217A (en) * | 2017-12-18 | 2018-05-18 | 中国电子科技集团公司第四十四研究所 | The single-photon avalanche photodiode device of integrated refrigerating |
| CN207818595U (en) * | 2018-02-11 | 2018-09-04 | 安徽问天量子科技股份有限公司 | The pumping gas-flow closure system of avalanche photodide |
-
2020
- 2020-01-13 CN CN202010031308.8A patent/CN111223849A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1181634A (en) * | 1996-10-18 | 1998-05-13 | 阿尔卡塔尔·阿尔斯托姆公司 | Optoelectronic component |
| JP2001033667A (en) * | 1999-07-21 | 2001-02-09 | Nec Eng Ltd | Surface mounting type photo-receiving module |
| US20010025650A1 (en) * | 2000-03-31 | 2001-10-04 | Kazunori Ando | Photo-electronic device and method of producing the same |
| US20020150373A1 (en) * | 2001-03-27 | 2002-10-17 | Masanori Goto | Optical waveguide module-mounted package |
| US20030123819A1 (en) * | 2001-12-25 | 2003-07-03 | Hiromi Nakanishi | Optical communications module |
| CN1700450A (en) * | 2005-06-09 | 2005-11-23 | 华南师范大学 | Secondary packaging device of avalanche photodiode for infrared photodetection |
| JP2008294262A (en) * | 2007-05-25 | 2008-12-04 | Nippon Telegr & Teleph Corp <Ntt> | Optical element module and its manufacturing method |
| US20120320938A1 (en) * | 2010-03-10 | 2012-12-20 | Panasonic Corporation | Semiconductor laser device |
| CN103336336A (en) * | 2013-06-28 | 2013-10-02 | 安徽量子通信技术有限公司 | Seal refrigerating box convenient to dismantle and mount and optical fiber via hole hermetically sealed connector |
| CN106405753A (en) * | 2015-08-03 | 2017-02-15 | 住友电气工业株式会社 | Method of producing optical module and optical module |
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