CN102324444B - Encapsulating device for single-photon detector - Google Patents

Encapsulating device for single-photon detector Download PDF

Info

Publication number
CN102324444B
CN102324444B CN201110252925.1A CN201110252925A CN102324444B CN 102324444 B CN102324444 B CN 102324444B CN 201110252925 A CN201110252925 A CN 201110252925A CN 102324444 B CN102324444 B CN 102324444B
Authority
CN
China
Prior art keywords
photon detector
top cover
hole
encapsulating device
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201110252925.1A
Other languages
Chinese (zh)
Other versions
CN102324444A (en
Inventor
陈健
赵清源
张蜡宝
康琳
许伟伟
吴培亨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing University
Original Assignee
Nanjing University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing University filed Critical Nanjing University
Priority to CN201110252925.1A priority Critical patent/CN102324444B/en
Publication of CN102324444A publication Critical patent/CN102324444A/en
Application granted granted Critical
Publication of CN102324444B publication Critical patent/CN102324444B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

The invention discloses an encapsulating device for a single-photon detector, which comprises a top rod, a top cover and a base which are sequentially arranged from the top to the bottom. The top rod and the top cover are fixedly connected; the top cover and the base are also connected fixedly; the top cover is provided with at least two through holes, wherein a first through hole passes through and fixes an optical fiber; a second through hole passes through a cable; a chip of the single-photon detector is fixed at a position corresponding to the optical fiber on the upper surface of the base; a high-frequency circuit board is fixed at a position corresponding to the cable; and the chip of the single-photon detector is electrically connected with the high-frequency circuit board. The encapsulating device for the single-photon detector has a compact structure; the two-channel photoelectric encapsulation can be achieved within an inside diameter of 20 mm; the external light to be detected is coupled by using the optical fiber; the coupling efficiency is more than 95%; furthermore, the interference is small; the chip is connected by using a microstrip line coplanar waveguide and an SMP (symmetrical multi-processing) high-frequency joint; the transmission performance that the chip outputs an electric signal to an external amplifier is improved; by adopting a symmetrical structural design, the combination is convenient; and the repeated service efficiency of the encapsulating device for the single-photon detector is improved.

Description

Encapsulating device for single-photon detector
Technical field
The present invention relates to a kind of packaging system, particularly a kind of encapsulating device for single-photon detector.
Background technology
Over past ten years, the superconducting nano-wire single-photon detector as a kind of novel single-photon detector by everybody extensive concern.The tens nanometers wide sinuous lines of the response region of detector for going out with the film preparation of superconduction niobium nitride.These superconduction lines are biased an electric current that is lower than superconduction critical electric current, and after lines absorbed photon, absorption place local temperature raise, and forms a heat island.The existence of heat island is so that the redistribution of electric current on the lines, thereby and finally surpasses superconduction critical electric current so that regional area forms Resistance states.Simultaneously, because phonon, electronics and this triangular heat exchange of substrate in the film bar, the Resistance states of formation only can continue very short time, thereby so that the film bar is absorbing photon, produces the superconduction bias state that comes back to after responding in advance, and then respond next photon.
The preparation of superconducting nano-wire single-photon detector and use have been merged the sophisticated technology such as superconductor, thin film technique, micro-nano processing, microwave measurement and have been shown excellent performance.At first, the superconducting nano-wire single-photon detector has the repetition rate of 100MHz and the time jitter of 50ps, avalanche diode and photomultiplier commonly used in the semiconductor single-photon detector increased an about magnitude in repetition rate, reduced by a magnitude in time jitter.Secondly, semi-conducting material is because the restriction that can be with, have obvious cut-off wavelength for the detection efficient of near infrared band, and superconductor is very little owing to energy gap, in theory can be far above semi-conducting material for the detection efficient of near infrared band.In addition, because the detector working temperature only is several K, the superconducting nano line detector has the extremely low number of calculating mentally, and does not need to use as semiconductor detector simultaneously Geiger (Ginger) work pattern, the detection that can continue.Moreover, than superconduction transform boundary transducer (transition edge sensor) and superconducting tunnel junction detector, the repetition rate of superconducting nano line detector is still more a lot of than them, and for working temperature also so not low requirement, testing circuit is also relatively simple simultaneously.
The performance that based superconductive nano wire single-photon detector is outstanding, in recent years, it was applied to the fields such as quantum cryptography, integrated circuit detection, bioluminescence detection, single-photon source demarcation, Single Photon Counting.Especially in quantum cryptography, behind the use superconducting nano-wire single-photon detector, the speed of communication and distance have all obtained significant lifting.Use for these, need to overcome following problem.At first, provide a cover low temperature environment for the user.Usually, liquid helium is the refrigeration medium of easy acquisition, if but only chip is soaked and place liquid helium, its working temperature also can only reach 4.2K.The use circulating refrigerator can reduce working temperature and the continuous firing of device, but it is bulky, and expense is high and be difficult for mobile.Moreover because chip operation is in low temperature environment, and light signal to be detected is very faint, so the degree of coupling of light signal directly affects the detection efficiency of system and calculates mentally number.At last, the response signal of chip is faint, and simultaneously chip is in low temperature environment, can't amplify at the chip near-end, so chip to normal temperature amplifies this section, and the connection on the circuit must guarantee Signal integrity.
The employed transistor package of normal light electric explorer (TO) encapsulation, butterfly encapsulation are difficult to realize high-precision optical fiber align and high-frequency signal transmission, and in addition, these encapsulation spininess can't be applicable to vacuum low-temperature environment to the normal temperature device.
Summary of the invention
Goal of the invention: for the problem and shortage of above-mentioned existing existence, the purpose of this invention is to provide a kind of encapsulating device for single-photon detector that is applicable to vacuum low-temperature environment.
Technical scheme: for achieving the above object, the technical solution used in the present invention is a kind of encapsulating device for single-photon detector, comprises the push rod, top cover and the base that set gradually from top to bottom; Described push rod is fixedly connected with top cover, and top cover also is fixedly connected with base; Described top cover is provided with at least two through holes, and wherein the first through hole passes and fixed fiber, and the second through hole passes cable; The position of the corresponding optical fiber of the upper surface of described base is single-photon detector chip (hereinafter to be referred as chip) fixedly, and the position of corresponding cable is high-frequency circuit board fixedly, and this superconducting nano-wire single-photon detector chip is electrically connected with high-frequency circuit board.
Described top cover and base can be respectively the circular configuration that two concentric semicircles structures form.
Described the first through hole can be circular hole, and the second through hole can be square hole.
The top of described push rod can be cylinder, and the bottom can be two parallel prongs; The upper surface of described top cover can be provided with connecting rod, and this connecting rod stretches between two described prongs and with described prong and is fixedly connected with.
The material of described push rod can be polyformaldehyde, and it is terminal with the liquid helium Dewar internal layer reference test bar of bleeding be used for to connect cold head part (top cover and base all are immersed in liquid helium, are called cold head), and isolated cold head keeps the low temperature of cold head with the heat transmission between the reference test bar.
Can be fixed with ceramic ring in the described circular hole, this ceramic ring is fixed described optical fiber.Can use the epoxy Instant cement to fix described ceramic ring in the described circular hole.
Described base can be provided with third through-hole corresponding to the lower of described circular hole position, is used for microscopic optical fiber inner core and explorer response zone relative position; The side of described base can be provided with fourth hole, according to microscopical observed result, uses the metal fine needle to stretch into this through hole moving chip, realizes the aligning of optical fiber and chip.
Described high-frequency circuit board can be provided with the first high frequency connectors, and an end of described cable can be provided with the second high frequency connectors, and these first high frequency connectors connect the second high frequency connectors.
The side of the upper cylinder of described push rod can be provided with a groove, and described cable can be by stretching out in this groove.
Beneficial effect: the present invention is applicable to the encapsulation of single-photon detector, is specially adapted to the superconducting nano-wire single-photon detector and uses under liquid helium is bled Dewar.Compact conformation can be realized the dual channel optoelectronic encapsulation in the 20mm internal diameter; Use the coupling fiber outside to be detected light, coupling efficiency is greater than 95% and disturb little; Use the microstrip line co-planar waveguide to be connected chip with the SMP high-frequency joint, improved the transmission performance of chip output electrical signals to external amplifier; The design of employing symmetrical structure, convenient combination improves it and reuses efficient.
Description of drawings
Fig. 1 is the encapsulating device for single-photon detector structural representation;
Fig. 2 is that the master of push rod looks schematic diagram;
Fig. 3 is that schematic diagram is looked on the left side of push rod;
Fig. 4 is the schematic top plan view of push rod;
Fig. 5 is the schematic top plan view of top cover;
Fig. 6 is that the master of top cover looks schematic diagram;
Fig. 7 is that the master of base looks schematic diagram;
Fig. 8 is the schematic top plan view of base;
Fig. 9 be microscopically take to light effect figure;
Figure 10 is the test result figure of cable S21 parameter;
Figure 11 uses the detection efficiency of superconducting nano-wire single-photon detector of the present invention and calculates mentally several test result figure.
In the accompanying drawing, 1: the first through hole; 2: prong; 3: the first screws; 4: the first grooves (being the groove of claim and specification summary of the invention); 5: square hole (being the first through hole of claim and specification summary of the invention); 6: circular hole (being the second through hole of claim and specification summary of the invention); 7: the second through holes; 8: third through-hole; 9: fourth hole; 10: the second grooves; 11: the three grooves; 12: fifth hole (being the third through-hole of claim and specification summary of the invention); 13: the second screws; 14: connecting rod.
Embodiment
Below in conjunction with the drawings and specific embodiments, further illustrate the present invention, should understand these embodiment only is used for explanation the present invention and is not used in and limits the scope of the invention, after having read the present invention, those skilled in the art all fall within the application's claims limited range to the modification of the various equivalent form of values of the present invention.
Comprise four parts in the invention process process, optical fiber fixing, high-frequency circuit board fixing and signal is drawn, chip is fixed and to light, installation.
Optical fiber one end need to be fixed in the top cover circular hole 6, as shown in Figure 5.In order to reach not only fixed fiber but also to be convenient to move up and down optical fiber connector with the purpose of vertical range between the chip, use in advance the epoxy Instant cement to fix an internal diameter 2.5mm standard ceramic ring (not shown) in the top cover circular hole 6, subsequently, optical fiber being peelled off tail optical fiber behind the becket slowly inserts in the ceramic ring and gets final product.Other end optical fiber need to an internal diameter be 2.5mm on the inboard pad of FC becket, and diameter of section is the O type circle of 1mm, then receives the liquid helium Dewar external interface place (not shown) of bleeding.
Use the epoxy Instant cement to be fixed in the 3rd groove 11 places on the base high-frequency circuit board (not shown) that designs, guarantee that SMP radio-frequency joint (not shown) is under top cover square hole 5, to make things convenient for semi-flexible cable (being the cable of claim and specification summary of the invention) exact connect ion, as shown in Figure 7.Semi-flexible cable one end is corresponding SMP joint, is used for connecting the SMP joint on the high-frequency circuit board, and the other end is the SMA seal nipple, is connected to the bleed interface (not shown) of Dewar of liquid helium.
Chip (not shown) use low temperature glue is fixed on the second groove 10 places on the base, needs to guarantee that the nano wire region on the chip is in circular hole place shown in Figure 5.Subsequently, use screw to fixedly mount the top cover and the base that installs high-frequency circuit board of ceramic ring by the second through hole 7 shown in Figure 5 and the second screw 13 shown in Figure 8.To the light time, first optical fiber pigtail is slowly inserted ceramic ring, and the vertical range of controlling itself and chip surface is greater than 1mm, another termination one visible light lasing light emitter, what use in this example is green glow, as shown in Figure 9, be nano wire region in the dotted line frame, the bright spot in the dotted line frame is the optical fiber inner core.By the fifth hole 12 of base, use microscopic optical fiber inner core with the relative position of nano wire region, use gently moving chip of the fourth hole 9 of metal fine needle by the base side, as shown in Figure 8.Behind the aligned position, again tail optical fiber is slowly inserted, make its end face chip surface of trying one's best.Effect behind the aligning as shown in Figure 9.
Chip behind the aligning need to leave standstill a period of time, makes the low temperature adhesive curing.Two top covers that fix and footstock are synthesized a circle, and with in the prong 2 of the connecting rod 14 insertion polyformaldehyde push rods on the top cover (as shown in Figure 2), use screw to fix by the first screw 3 shown in Figure 3 and third through-hole 8 shown in Figure 6.Cable is by stretching out (as shown in Figure 4) in the push rod lateral grooves 4.Push rod is slowly inserted (as shown in Figure 1) in the reference test bar, adjust longitudinal separation, connect the high-frequency circuit board on semi-flexible cable and the base.Use subsequently screw by the first through hole 1 on the push rod and through hole (not shown) fixed mandril and the reference test bar on the reference test bar.Last moulding figure as shown in Figure 1.
Figure 10 illustrate at the circuit of inside to connect for the bleed S21 parameter of the inner semi-flexible cable of Dewar of the liquid helium that uses the network analyzer test, does not produce resonance point and breakpoint, and attenuation also matches with the attenuation coefficient of the semi-flexible cable of use.Figure 11 is for the detection efficient of the superconducting nano line detector that uses these packaging and testing and calculate mentally number, has reacted preferably the intrinsic property of chip, has reached the standard of using.

Claims (9)

1. an encapsulating device for single-photon detector comprises the push rod, top cover and the base that set gradually from top to bottom; Described push rod is fixedly connected with top cover, and top cover also is fixedly connected with base; Described top cover is provided with at least two through holes, and wherein the first through hole passes and fixed fiber, and the second through hole passes cable; The position of the corresponding optical fiber of the upper surface of described base is the single-photon detector chip fixedly, and the position of corresponding cable is high-frequency circuit board fixedly, and this single-photon detector chip is electrically connected with high-frequency circuit board; Described top cover and base all are immersed in the liquid helium, and the material of push rod is polyformaldehyde; Described base side has fourth hole, can use the metal fine needle to carry out the position alignment of the nano wire region of optical fiber inner core and single-photon detector chip by this fourth hole moving chip; The top of described push rod is cylinder, and cylindrical side is provided with a groove, and described cable is by stretching out in this groove; Cable one end connects the SMP joint on the high-frequency circuit board, and the other end is the SMA seal nipple, is connected to the bleed interface of Dewar of liquid helium.
2. described encapsulating device for single-photon detector according to claim 1, it is characterized in that: described top cover and base are respectively the circular configuration that two concentric semicircles structures form.
3. described encapsulating device for single-photon detector according to claim 1, it is characterized in that: described the first through hole is circular hole, the second through hole is square hole.
4. described encapsulating device for single-photon detector according to claim 1, it is characterized in that: the bottom of described push rod is two parallel prongs; The upper surface of described top cover is provided with connecting rod, and this connecting rod stretches between two described prongs and with described prong and is fixedly connected with.
5. described encapsulating device for single-photon detector according to claim 1, it is characterized in that: the material of described push rod is polyformaldehyde.
6. described encapsulating device for single-photon detector according to claim 3, it is characterized in that: be fixed with ceramic ring in the described circular hole, this ceramic ring is fixed described optical fiber.
7. described encapsulating device for single-photon detector according to claim 6 is characterized in that: use the fixing described ceramic ring of epoxy Instant cement in the described circular hole.
8. described encapsulating device for single-photon detector according to claim 3, it is characterized in that: described base is provided with third through-hole corresponding to the below of described circular hole position.
9. described encapsulating device for single-photon detector according to claim 1, it is characterized in that: described high-frequency circuit board is provided with the first high frequency connectors, and an end of described cable is provided with the second high frequency connectors, and these first high frequency connectors connect the second high frequency connectors.
CN201110252925.1A 2011-08-30 2011-08-30 Encapsulating device for single-photon detector Expired - Fee Related CN102324444B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201110252925.1A CN102324444B (en) 2011-08-30 2011-08-30 Encapsulating device for single-photon detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110252925.1A CN102324444B (en) 2011-08-30 2011-08-30 Encapsulating device for single-photon detector

Publications (2)

Publication Number Publication Date
CN102324444A CN102324444A (en) 2012-01-18
CN102324444B true CN102324444B (en) 2013-03-20

Family

ID=45452149

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110252925.1A Expired - Fee Related CN102324444B (en) 2011-08-30 2011-08-30 Encapsulating device for single-photon detector

Country Status (1)

Country Link
CN (1) CN102324444B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103245424B (en) * 2012-02-03 2015-02-11 中国科学院上海微系统与信息技术研究所 Method and device for improving electrical interference resistance of SNSPD (Superconducting Nanowire Single Photon Detector) system
CN108333696A (en) * 2018-04-13 2018-07-27 南京大学 A kind of superconducting single-photon detector casing fill-in light alignment package device
CN111679179A (en) * 2020-06-15 2020-09-18 中国科学院半导体研究所 Semi-packaged detector chip testing device and using method
CN115101601B (en) * 2022-07-26 2024-04-09 中国电子科技集团公司第四十三研究所 Packaging structure of single photon detector

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101614594A (en) * 2009-07-28 2009-12-30 南京大学 Superconducting single-photon detector and method for packing

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6812464B1 (en) * 2000-07-28 2004-11-02 Credence Systems Corporation Superconducting single photon detector
KR100688583B1 (en) * 2005-12-31 2007-03-02 삼성전자주식회사 Apparatus for analyzing photo emission and method of analyzing the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101614594A (en) * 2009-07-28 2009-12-30 南京大学 Superconducting single-photon detector and method for packing

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
《Compactly packaged superconducting nanowire single-photon detector with an optical cavity for multichannel system》;Miki;《Optics Society of America》;20091231;23557-23564 *
《Robust Packaging Technique and Characterization of Fiber-Pigtailed Superconducting NbN Nanowire Single Photon Detectors》;Orgiazzi;《IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY》;20090630;341-345 *
《超导纳米线单光子探测器》;张蜡宝;《物理学报》;20110331;1-7 *
Miki.《Compactly packaged superconducting nanowire single-photon detector with an optical cavity for multichannel system》.《Optics Society of America》.2009,23557-23564.
Orgiazzi.《Robust Packaging Technique and Characterization of Fiber-Pigtailed Superconducting NbN Nanowire Single Photon Detectors》.《IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY》.2009,341-345.
张蜡宝.《超导纳米线单光子探测器》.《物理学报》.2011,1-7.

Also Published As

Publication number Publication date
CN102324444A (en) 2012-01-18

Similar Documents

Publication Publication Date Title
CN102324444B (en) Encapsulating device for single-photon detector
CN103090977B (en) Terahertz signal detection device
CN107317081A (en) Terahertz is inverted co-planar waveguide monolithic integrated circuit encapsulation transition structure without wire jumper
CN104051954A (en) Optical coupling structure applied to optical signal monitoring of photoelectronic devices
CN105609489B (en) The structure of modularized encapsulation is carried out to chip based on improved waveguide probe transition
CN100406897C (en) Test jig for measuring To packed base high frequency of photoelectronic device
US10551244B2 (en) Photon detector
CN103175609A (en) Device using high-temperature superconducting YBCO (yttrium barium copper oxide) bicrystal junction for detecting terahertz radiation of high-temperature superconducting BSCCO (bismuth strontium calcium copper oxide)
CN201508181U (en) Optical transceiving component for optical fiber sensing
CN105720477A (en) Package structure applicable to different-surface electrode laser chip
CN108873190A (en) A kind of integrated opto-electronic receiver module and its production technology containing low-noise amplifier
CN110617881B (en) Performance characterization method of superconducting phase-change edge single photon detector
Tossoun et al. Ultra-low capacitance, high-speed integrated waveguide photodiodes on InP
Rosales et al. Full area emitter SiGe phototransistor for opto-microwave circuit applications
CN207475555U (en) A kind of ultra wide band multichannel optoelectronic integration detector for microwave photon system
CN103091568A (en) Avalanche photodiode excessive noise factor measuring system
CN203216607U (en) Device using high-temperature superconductive YBCO bicrystal junction for detecting terahertz radiation of high-temperature superconductive BSCCO
CN114137279A (en) superconducting/TMR composite weak current detection method, sensor and preparation method thereof
CN102620820A (en) Superconducting single-photon detector with composite structure and method for preparing superconducting single-photon detector
CN209200124U (en) A kind of direct current signal and microwave signal synthesizer
CN204116404U (en) A kind of ultra-weak electronic signal measurement by magnification circuit of fast detector
CN217605118U (en) Photoelectric testing device based on PCB board
CN105552712A (en) Packaging device and method for terahertz quantum cascade laser
Zhu et al. Electrical and optical coupling in an electroabsorption modulator integrated with a DFB laser
Suzuki Evaluation of uni-traveling carrier photodiode performance at low temperatures and applications to superconducting electronics

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130320

Termination date: 20140830

EXPY Termination of patent right or utility model