CN111211081B - Single-grain thinning back metallization method - Google Patents
Single-grain thinning back metallization method Download PDFInfo
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- CN111211081B CN111211081B CN202010158508.XA CN202010158508A CN111211081B CN 111211081 B CN111211081 B CN 111211081B CN 202010158508 A CN202010158508 A CN 202010158508A CN 111211081 B CN111211081 B CN 111211081B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68372—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support a device or wafer when forming electrical connections thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Abstract
The invention discloses a single-grain thinning back metallization method, which comprises the following steps: the method comprises the following steps: adhering a single crystal grain on a substrate wafer by using a double-sided adhesive tape, wherein the front side of the crystal grain faces upwards; step two: performing wafer-level plastic package, and encapsulating all crystal grains in epoxy resin to manufacture a resin wafer; step three: adhering the resin wafer on the substrate wafer by using a double-sided adhesive tape; step four: thinning the back of the resin wafer; step five: etching the back of the resin wafer; step six: metallization of the back of the resin wafer; step seven: the resin is separated from the crystal grains, so that the thinning and back metallization of the crystal grains are realized. The invention integrates single crystal grains into a wafer shape; therefore, the existing equipment is used for processing, and the thinning and metallization efficiency is high.
Description
Technical Field
The invention relates to the technical field of grain preparation, in particular to a single grain thinning back metallization method.
Background
Conventional thinned backside metallization is processed on a full wafer basis, with the following general flow:
the method comprises the following steps: pasting a film on the front surface of the wafer;
step two: thinning the back of the wafer;
step three: etching the back of the wafer and uncovering the film;
step four: and (4) carrying out metallization evaporation on the back surface of the wafer.
In practice, however, it is sometimes necessary to thin and back-side metalize single die (i.e., die after wafer dicing), and the conventional wafer thinning back-side metalization process is not suitable
Because the current processing is based on a whole wafer, the processing of single crystal grains is not suitable; therefore, the single crystal grains need to be integrated into a wafer shape to be thinned and subjected to back metallization processing; thus, the existing equipment is better utilized for processing.
Disclosure of Invention
The present invention is directed to a single-die thinned back side metallization method, which solves the above problems of the prior art.
The technical problem to be solved by the invention can be realized by the following technical scheme:
the single-grain thinning back metallization method comprises the following steps:
the method comprises the following steps: adhering single crystal grains to a substrate wafer by using a double-sided adhesive tape, wherein the back surfaces of the crystal grains face downwards (the front surfaces of the crystal grains face upwards), and the back surfaces of the crystal grains are adhered to the double-sided adhesive tape to form the substrate wafer adhered with the crystal grains;
step two: carrying out wafer-level plastic package on the substrate wafer adhered with the crystal grains and prepared in the step one, and encapsulating all the crystal grains in epoxy resin to prepare a resin wafer;
step three: separating the resin wafer from the substrate wafer to form an independent resin wafer;
step four: adhering the surface, which is exposed out of the back surface of the crystal grain, of the resin wafer manufactured in the third step to the substrate wafer by using a double-sided adhesive tape;
step five: thinning the surface of the resin wafer exposed out of the back surface of the crystal grain to the required thickness;
step six: etching the surface of the thinned resin wafer, which is exposed out of the back surface of the crystal grain, so that a step with higher height is formed between the resin surface and the surface of the crystal grain;
step seven: carrying out metallization treatment on the surface, exposed out of the back surface of the crystal grain, of the resin wafer etched in the step six, wherein the metal layer on the resin surface is not connected with the metal layer on the surface of the crystal grain;
step eight: and peeling the resin and the crystal grains in the resin wafer metallized in the step seven to obtain thinned and metallized crystal grains.
In a preferred embodiment of the present invention, the first step is replaced by the following method: adhering single crystal grains to a substrate wafer by using a double-sided adhesive tape, wherein the back of each crystal grain faces upwards, and the front of each crystal grain is adhered to the double-sided adhesive tape to form the substrate wafer adhered with the crystal grains; step three and step four are eliminated, and step five is replaced by the following method: directly grinding the resin layer to reach the required thickness; the rest steps are the same as above.
Due to the adoption of the technical scheme, the single crystal grains are integrated into a wafer shape; therefore, the existing equipment is used for processing, and the thinning and metallization efficiency is high.
Drawings
FIG. 1 is a schematic diagram of a first step of the present invention.
FIG. 2 is a diagram illustrating a second step of the present invention.
FIG. 3 is a schematic diagram of step three of the present invention.
FIG. 4 is a top view of a resin wafer in step three of the present invention.
FIG. 5 is a bottom view of a resin wafer in a third step of the present invention.
FIG. 6 is a diagram illustrating a fourth step of the present invention.
FIG. 7 is a schematic diagram of step six of the present invention.
FIG. 8 is a diagram illustrating a seventh step of the present invention.
FIG. 9 is a diagram illustrating step eight of the present invention.
Detailed Description
The invention is further described below in conjunction with the appended drawings and detailed description.
The single-grain thinning back metallization method comprises the following steps:
the method comprises the following steps: referring to fig. 1, a single crystal grain 10 is adhered to a substrate wafer 30 by a double-sided adhesive tape 20, and the back surface 11 of the crystal grain 10 faces downwards to form the substrate wafer adhered with the crystal grain;
step two: referring to fig. 2, performing wafer-level plastic package on the substrate wafer with the adhered crystal grains, which is prepared in the first step, and encapsulating all the crystal grains 10 in epoxy resin 40 to prepare a resin wafer 50;
step three: referring to fig. 3 to 5, the resin wafer 50 of step two is separated from the substrate wafer 30 to form a separate resin wafer 50; thus, the die 10 is integrated into the resin wafer 50 and the back surface 11 of the die 10 exposes the resin layer, which facilitates subsequent processing;
step four: referring to fig. 6, the side 51 of the resin wafer 50 manufactured in the third step, on which the back surface 11 of the die 10 is exposed, is bonded to the substrate wafer 30 with the double-sided tape 20 facing upward;
step five: thinning the surface 51 of the resin wafer 50 in the fourth step, which is exposed out of the back surface 11 of the crystal grain 10, to a required thickness by using wafer thinning equipment;
step six: referring to fig. 7, an etching technique with a higher silicon etching rate than that of the plastic is selected to etch the surface 51 of the resin wafer 50 thinned in step five, where the back surface 11 of the die 10 is exposed, so that a relatively high step is formed between the resin surface 51 and the back surface 11 of the die 10;
step seven: referring to fig. 8, metallization processing is performed on the side 51 of the resin wafer 50 after the sixth etching step, where the back surfaces 11 of the dies 10 are exposed, and the metal layer 61 on the resin side 51 is not connected to the metal layer 62 on the back surfaces 11 of the dies 10;
step eight: referring to fig. 9, the resin in the resin wafer 50 after the seven metallizations is chemically or physically stripped from the die 10, resulting in a thinned and metallized die 10 a.
Some of the steps in the single die thinning backside metallization method described above may also be processed as follows:
the first step adopts the following method to replace: adhering a single crystal grain 10 on a substrate wafer 30 by using a double-sided tape 20, wherein the back 11 of the crystal grain 10 faces upwards, and the front of the crystal grain 10 is adhered on the double-sided tape 20 to form a substrate wafer 50 adhered with the crystal grain; step three and step four are eliminated, and step five is replaced by the following method: directly grinding the resin layer to reach the required thickness; the rest steps are the same as above.
Claims (2)
1. The single-grain thinning back metallization method is characterized by comprising the following steps of:
the method comprises the following steps: adhering single crystal grains to a substrate wafer by using a double-sided adhesive tape, and making the front side of each crystal grain upwards to form the substrate wafer adhered with the crystal grains;
step two: carrying out wafer-level plastic package on the substrate wafer adhered with the crystal grains and prepared in the step one, and encapsulating all the crystal grains in epoxy resin to prepare a resin wafer;
step three: separating the resin wafer from the substrate wafer to form an independent resin wafer;
step four: adhering the surface, which is exposed out of the back surface of the crystal grain, of the resin wafer manufactured in the third step to the substrate wafer by using a double-sided adhesive tape;
step five: thinning the surface of the resin wafer exposed out of the back surface of the crystal grain to the required thickness;
step six: etching the surface of the thinned resin wafer, which is exposed out of the back surface of the crystal grain, so that a step with higher height is formed between the resin surface and the surface of the crystal grain;
step seven: carrying out metallization treatment on the surface, exposed out of the back surface of the crystal grain, of the resin wafer etched in the step six, wherein the metal layer on the resin surface is not connected with the metal layer on the surface of the crystal grain;
step eight: and peeling the resin and the crystal grains in the resin wafer metallized in the step seven to obtain thinned and metallized crystal grains.
2. The single die thinning backside metallization method of claim 1 wherein said first step is replaced by the following method: adhering single crystal grains to a substrate wafer by using a double-sided adhesive tape, wherein the back of each crystal grain faces upwards, and the front of each crystal grain is adhered to the double-sided adhesive tape to form the substrate wafer adhered with the crystal grains; step three and step four are eliminated, and step five is replaced by the following method: directly grinding the resin layer to reach the required thickness; the remaining steps are as in claim 1.
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| CN202010158508.XA CN111211081B (en) | 2020-03-09 | 2020-03-09 | Single-grain thinning back metallization method |
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| CN111211081B true CN111211081B (en) | 2022-03-11 |
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Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6013534A (en) * | 1997-07-25 | 2000-01-11 | The United States Of America As Represented By The National Security Agency | Method of thinning integrated circuits received in die form |
| US7535100B2 (en) * | 2002-07-12 | 2009-05-19 | The United States Of America As Represented By The Secretary Of The Navy | Wafer bonding of thinned electronic materials and circuits to high performance substrates |
| US20080085572A1 (en) * | 2006-10-05 | 2008-04-10 | Advanced Chip Engineering Technology Inc. | Semiconductor packaging method by using large panel size |
| US20090008794A1 (en) * | 2007-07-03 | 2009-01-08 | Weng-Jin Wu | Thickness Indicators for Wafer Thinning |
| TWI352411B (en) * | 2007-11-22 | 2011-11-11 | Chipmos Technologies Inc | Thinning method for fabricating dies arrangement p |
| CN103904044A (en) * | 2014-04-02 | 2014-07-02 | 华进半导体封装先导技术研发中心有限公司 | Fan-out wafer-level packaging structure and manufacturing technology |
| CN105633027B (en) * | 2014-11-05 | 2019-07-16 | 无锡超钰微电子有限公司 | Fan-out wafer grade chip-packaging structure and its manufacturing method |
| CN107369611B (en) * | 2017-07-11 | 2020-03-17 | 上海朕芯微电子科技有限公司 | Novel wafer thinning back metallization process |
| CN109830434B (en) * | 2019-01-30 | 2022-12-23 | 上海朕芯微电子科技有限公司 | Wafer back thinning metallization method |
| CN110098160A (en) * | 2019-02-26 | 2019-08-06 | 上海朕芯微电子科技有限公司 | A kind of wafer-level packaging chip and preparation method thereof |
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